Magnetic Field Detector Using Compound Semiconductor Material (e.g., Gaas, Insb, Etc.) Patents (Class 257/425)
  • Patent number: 11107976
    Abstract: According to an embodiment, a magnetic tunnel junction includes a tunnel barrier layer provided between a first magnetic layer and a second magnetic layer. The tunnel barrier layer is a crystal body made of a stacked structure of a first insulating layer and a second insulating layer. The crystal body is oriented. The first insulating layer is made of an oxide of Mg1-xXx (0?x?0.15). X includes at least one element selected from the group consisting of Al and Ti. The second insulating layer is made of an oxide of an alloy including at least two elements selected from the group consisting of Mg, Al, Zn, and Li. Both the first magnetic layer and the second magnetic layer are made of an alloy including B and at least one element selected from the group consisting of Co and Fe.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: August 31, 2021
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Hiroaki Sukegawa, Ikhtiar, Shinya Kasai, Kazuhiro Hono, Xiandong Xu
  • Patent number: 10700265
    Abstract: A semiconductor device including a circuitry, a magnetic sensor, and a buried oxide. The circuitry is formed on a substrate. The magnetic sensor has a sensing area formed under the circuitry. The buried oxide is disposed between the circuitry and the magnetic sensor. The sensing area comprises an N-doped area and a P-doped area doped deeper than the N-doped area, and sensor contacts connect the sensing area with the circuitry through the buried oxide.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: June 30, 2020
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Francois Hebert, Seong Woo Lee, Jong Yeul Jeong, Hee Baeg An, Kang Sup Shin, Seong Min Choe, Young Joon Kim
  • Patent number: 10630071
    Abstract: Presented systems and methods can facilitate efficient switching and protection in electronic systems. A system can comprise: an input operable to receive a signal; an adjustable component configurable to operate in a first mode which includes a low resistance and the component configurable to operate in a second mode which includes a current limiting operation in which the second mode enables continued operation in conditions that are unsafe for operation in the first mode; and an output operable to forward a signal. The adjustable component can be configurable to turn off if unsafe to operate in either the first mode or second mode. The first mode can include a relatively large component configuration with a relatively low drain to source on resistance. Utilizing a small component configuration in the second mode can include a relatively increased gate to source voltage compared to a large component configuration in the second mode.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: April 21, 2020
    Assignee: Vishay-Siliconix, LLC
    Inventors: Kyle Terrill, Trang Vu
  • Patent number: 10620277
    Abstract: A semiconductor chip for measuring a magnetic field. The semiconductor chip comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element is mounted on the electronic circuit. The magnetic sensing element is electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: April 14, 2020
    Assignees: MELEXIS TECHNOLOGIES NV, X-CELEPRINT LIMITED
    Inventors: Christian Schott, Matthew Meitl, Christopher Bower
  • Patent number: 10345344
    Abstract: A non-contact magnetic sensor assembly includes a thin-walled magnetic ring that facilitates a reduction in the size of the device without compromising performance. The component assembly may be configured as a Hall effect current sensor and may be included in a string monitor for a photovoltaic power system.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: July 9, 2019
    Assignee: EATON INTELLIGENT POWER LIMITED
    Inventors: Frank Anthony Doljack, Ramdev Kanapady
  • Patent number: 10170695
    Abstract: A magnetic tunnel junction device includes a Heusler alloy layer that has not only a perpendicular magnetic anisotropy characteristic, but also a half-metallicity characteristic. For example, the magnetic tunnel junction device includes at least one Heusler alloy layer and a barrier layer. The barrier layer is in contact with the Heusler alloy layer and has an insulating property. A compressive strain is exerted on the Heusler alloy layer in a direction parallel to an interface between the Heusler alloy layer and the barrier layer.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: January 1, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yoshiaki Sonobe, Hiroyoshi Itoh
  • Patent number: 9960116
    Abstract: A resistor whose characteristic value can be changed without requiring a photolithography process again is provided. The resistor includes a plurality of first resistor units which is connected serially to each other and a second resistor unit which is connected in parallel to part of the first resistor units. Then, after the measurement of a semiconductor integrated circuit, the second resistor unit is electrically disconnected as necessary. The first resistor units may be either a unit including a single resistor or may be a unit including a plurality of resistors.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: May 1, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kazuaki Ohshima
  • Patent number: 9882119
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer selectively exhibiting a first state in which the first magnetic layer has a first magnetization direction perpendicular to a main surface thereof and a second state in which the first magnetic layer has a second magnetization direction opposite to the first magnetization direction, a second magnetic layer having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the first magnetization direction, a third magnetic layer provided between the first and second magnetic layers, having a fixed magnetization direction perpendicular to a main surface thereof and corresponding to the second magnetization direction, and having a side surface including a recess portion, and a nonmagnetic layer provided between the first and third magnetic layers.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: January 30, 2018
    Assignee: Toshiba Memory Corporation
    Inventors: Jyunichi Ozeki, Hiroyuki Ohtori, Kuniaki Sugiura, Yutaka Hashimoto, Katsuya Nishiyama
  • Patent number: 9810745
    Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: November 7, 2017
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Anuraag Mohan, Dok Won Lee, William French, Erika L. Mazotti
  • Patent number: 9555199
    Abstract: The disclosure relates to a laminar evaporator, comprising a laminar electrical resistance heating element for pulse heating and evaporation of an inhalationally receivable material distributed or distributable on the heating element surface by means of an electric heating current flowing or flowable in a laminar manner with at least two electrical contacts and/or poles (2, 3) for introducing the filament current into the resistance heating element, where the resistance heating element has at least one slot-shaped recess (5) constricting the lines of flux (4) of the original electric field forming or formable between the poles (2, 3) and is superficially bonded with an open-celled porous structure holding or capable of holding the material.
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: January 31, 2017
    Assignee: BATMARK LIMITED
    Inventor: Helmut Buchberger
  • Patent number: 9368717
    Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: June 14, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaru Toko, Masahiko Nakayama, Kuniaki Sugiura, Yutaka Hashimoto, Tadashi Kai, Akiyuki Murayama, Tatsuya Kishi
  • Patent number: 9153778
    Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: October 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-min Kim, Young-bae Kim, Chang-jung Kim, Seung-ryul Lee, Man Chang, Sung-ho Kim, Eun-ju Cho
  • Patent number: 9111552
    Abstract: A magnetic recording head includes a main magnetic pole that applies a recording magnetic field to a recording layer of a recording medium, a write shield that faces the main magnetic pole with a write gap therebetween, a recording coil that generates a magnetic field in the main magnetic pole, a high-frequency oscillator that includes a field generation layer and a spin injection layer, and is disposed within the write gap between the main magnetic pole and the write shield, a wiring electrically connected to the high-frequency oscillator, a modulation electrode that applies a modulation voltage to the field generation layer, and a modulation insulating layer that is interposed between the field generation layer and the modulation electrode.
    Type: Grant
    Filed: September 2, 2014
    Date of Patent: August 18, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Akihiko Takeo, Kenichiro Yamada, Noayuki Narita, Katsuhiko Koui
  • Patent number: 9075191
    Abstract: This optical waveguide is provided with a slab waveguide in which a grating is formed, an arrayed waveguide connected to a position where a constructive interference portion of a self-image of the grating is formed, and a refractive index change region which is formed between the slab waveguide and the arrayed waveguide, in which an average value of a refractive index in a refractive index distribution in a direction substantially vertical to a light propagation direction is averagely increased from the slab waveguide toward the arrayed waveguide, and in which an average value of the refractive index in a refractive index distribution in a direction substantially parallel to the light propagation direction is increased at a central axis of the arrayed waveguide.
    Type: Grant
    Filed: September 26, 2011
    Date of Patent: July 7, 2015
    Assignee: NTT ELECTRONICS CORPORATION
    Inventors: Keiichi Morita, Kazumi Shimizu, Koji Kawashima
  • Patent number: 9041130
    Abstract: According to one embodiment, a magnetic memory device includes a semiconductor substrate, a memory cell array area on the semiconductor substrate, the memory cell array area including magnetoresistive elements, each of the magnetoresistive elements having a reference layer with an invariable magnetization, a storage layer with a variable magnetization, and a tunnel barrier layer therebetween, a magnetic field generating area which generates a first magnetic field cancelling a second magnetic field applying from the reference layer to the storage layer, and which is separated from the magnetoresistive elements, and a closed magnetic path area functioning as a closed magnetic path of the first magnetic field, and surrounding the memory cell array area and the magnetic field generating area.
    Type: Grant
    Filed: February 11, 2014
    Date of Patent: May 26, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shinya Kobayashi, Kenji Noma, Hisato Oyamatsu
  • Patent number: 9034662
    Abstract: The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the magnetic layers such as an inner pinned (AP1) layer, spin injection layer (SIL), field generation layer (FGL), and a free layer. An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi. The MREL may further comprise a first conductive layer that contacts a bottom surface of the semiconductor or semimetal layer, and a second conductive layer that contacts a top surface of the semiconductor or semimetal layer.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: May 19, 2015
    Assignee: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Min Li, Yuchen Zhou
  • Patent number: 9024370
    Abstract: Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: May 5, 2015
    Assignee: Northwestern University
    Inventors: Bruce W. Wessels, Steven J. May
  • Patent number: 9024397
    Abstract: A micro-fabricated atomic clock structure is thermally insulated so that the atomic clock structure can operate with very little power in an environment where the external temperature can drop to ?40° C., while at the same time maintaining the temperature required for the proper operation of the VCSEL and the gas within the vapor cell.
    Type: Grant
    Filed: January 7, 2012
    Date of Patent: May 5, 2015
    Assignee: Texas Instruments Incorporated
    Inventors: Peter J. Hopper, William French, Paul Mawson, Steven Hunt, Roozbeh Parsa, Martin Fallon, Ann Gabrys, Andrei Papou
  • Patent number: 9018028
    Abstract: A magnetic sensor and a manufacturing method thereof are provided. The magnetic sensor includes: a substrate comprising a plurality of Hall elements, a protective layer formed on the substrate, a base layer formed on the protective layer, and an integrated magnetic concentrator (IMC) formed on the base layer and comprising a surface with an elevated portion. The base layer has a larger cross-sectional area than the IMC.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: April 28, 2015
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Seung Han Ryu, Jong Yeul Jeong, Kwan Soo Kim
  • Patent number: 8987847
    Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: March 24, 2015
    Assignee: Headway Technologies, Inc.
    Inventors: Guenole Jan, Ru-Ying Tong, Yu-Jen Wang
  • Patent number: 8987850
    Abstract: Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration.
    Type: Grant
    Filed: March 4, 2014
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sechung Oh, Jangeun Lee, Woojin Kim, Heeju Shin
  • Patent number: 8987848
    Abstract: A MTJ for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: March 24, 2015
    Assignee: Headway Technologies, Inc.
    Inventors: Guenole Jan, Ru-Ying Tong, Yu-Jen Wang
  • Patent number: 8969101
    Abstract: A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: March 3, 2015
    Assignee: mCube Inc.
    Inventors: Hong Wan, Anthony F. Flannery
  • Patent number: 8896303
    Abstract: One embodiment of the present invention relates to a vertical Hall-effect device. The device includes at least two supply terminals arranged to supply electrical energy to the first Hall-effect region; and at least one Hall signal terminal arranged to provide a first Hall signal from the first Hall-effect region. The first Hall signal is indicative of a magnetic field which is parallel to the surface of the semiconductor substrate and which acts on the first Hall-effect region. One or more of the at least two supply terminals or one or more of the at least one Hall signal terminal comprises a force contact and a sense contact.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: November 25, 2014
    Assignee: Infineon Technologies AG
    Inventors: Udo Ausserlechner, Mario Motz
  • Patent number: 8884389
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer having a magnetization direction invariable and perpendicular to a film surface, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer and having a magnetization direction variable and perpendicular to the film surface. The first magnetic layer includes an interface layer formed on an upper side in contact with a lower portion of the tunnel barrier layer, and a main body layer formed on a lower side and serving as an origin of perpendicular magnetic anisotropy. The interface layer includes a first area provided on an inner side and having magnetization, and a second area provided on an outer side to surround the first area and having magnetization smaller than the magnetization of the first area or no magnetization.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaru Toko, Masahiko Nakayama, Akihiro Nitayama, Tatsuya Kishi, Hisanori Aikawa, Hiroaki Yoda
  • Patent number: 8878324
    Abstract: The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: November 4, 2014
    Assignees: Kabushiki Kaisha Toshiba, Tohoku University
    Inventors: Yushi Kato, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki
  • Patent number: 8860155
    Abstract: The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and may be avoided. In some embodiments, a spacer is formed between a first portion and a second portion of the MTJ to prevent the tunnel insulating layer of the MTJ from being damaged in subsequent processes, greatly increasing product yield thereby. In other embodiments, signal quality may be improved and magnetic flux leakage may be reduced through the improved cup-shaped MTJ structure of this invention.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: October 14, 2014
    Assignee: Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Chi Min-Hwa, Mieno Fumitake
  • Patent number: 8847342
    Abstract: A method of manufacturing a magnetic device includes forming a stack structure, the stack structure including a magnetic layer, and etching the stack structure by using an etching gas, the etching gas including at least 80% by volume of H2 gas.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: September 30, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Woo-cheol Lee, Tokashiki Ken, Hyung-joon Kwon, Myung-hoon Jung
  • Patent number: 8786039
    Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer has an engineered perpendicular magnetic anisotropy. The engineered PMA includes at least one of an insulating insertion layer induced PMA, a stress induced PMA, PMA due to interface symmetry breaking, and a lattice mismatch induced PMA. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: July 22, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dmytro Apalkov, Chang-Man Park, Roman Chepulskyy, Alexey Vasilyevitch Khvalkovskiy, Xueti Tang
  • Patent number: 8778515
    Abstract: Embodiments of the present invention provide a practical magneto-resistive effect element for CPP-GMR, which exhibits appropriate resistance-area-product and high magnetoresistance change ratio, and meets the demand for a narrow read gap. Certain embodiments of a magneto-resistive effect element in accordance with the present invention include a pinned ferromagnetic layer containing a first ferromagnetic film having a magnetization direction fixed in one direction, a free ferromagnetic layer containing a second ferromagnetic film having a magnetization direction varying in response to an external magnetic field, an intermediate layer provided between the pinned ferromagnetic layer and the free ferromagnetic layer, and a current confinement layer for confining a current. At least one of the pinned ferromagnetic layer or the free ferromagnetic layer includes a highly spin polarized layer.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: July 15, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Yo Sato, Katsumi Hoshino, Hiroyuki Hoshiya
  • Publication number: 20140175582
    Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer has an engineered perpendicular magnetic anisotropy. The engineered PMA includes at least one of an insulating insertion layer induced PMA, a stress induced PMA, PMA due to interface symmetry breaking, and a lattice mismatch induced PMA. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
    Type: Application
    Filed: December 20, 2012
    Publication date: June 26, 2014
    Inventors: Dmytro Apalkov, Chang-Man Park, Roman Chepulskyy, Alexey Vasilyevitch Khvalkovskiy, Xueti Tang
  • Publication number: 20140159177
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization In a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.
    Type: Application
    Filed: February 18, 2014
    Publication date: June 12, 2014
    Applicants: WPI-AIMR, Tohoku University, Kabushiki Kaisha Toshiba
    Inventors: Tadaomi DAIBOU, Junichi Ito, Tadashi Kai, Minoru Amano, Hiroaki Yoda, Terunobu Miyazaki, Shigemi Mizukami, Koji Ando, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Akio Fukushima, Taro Nagahama, Takahide Kubota
  • Patent number: 8742520
    Abstract: A method and structure for a three-axis magnetic field sensing device is provided. The device includes a substrate, an IC layer, and preferably three magnetic field sensors coupled to the IC layer. A nickel-iron magnetic field concentrator is also provided.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: June 3, 2014
    Assignee: mCube Inc.
    Inventors: Hong Wan, Xiao (Charles) Yang
  • Publication number: 20140145279
    Abstract: The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy.
    Type: Application
    Filed: January 30, 2014
    Publication date: May 29, 2014
    Applicants: Tohoku University, Kabushiki Kaisha Toshiba
    Inventors: Yushi KATO, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki
  • Publication number: 20140131824
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.
    Type: Application
    Filed: January 21, 2014
    Publication date: May 15, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Tadashi Kai, Hiroaki Yoda
  • Patent number: 8710628
    Abstract: An embodiment of the present memory cell a first layer of a chosen conductivity type, and a second layer which includes ferroelectric semiconductor material of the opposite conductivity type, the layers forming a pn junction. The first layer may be a conjugated semiconductor polymer, or may also be of ferroelectric semiconductor material. The layers are provided between first and electrodes. In another embodiment, a single layer of a composite of conjugated semiconductor polymer and ferroelectric semiconductor material is provided between first and second electrodes. The various embodiments may be part of a memory array.
    Type: Grant
    Filed: December 9, 2011
    Date of Patent: April 29, 2014
    Assignee: Spansion LLC
    Inventor: Juri H. Krieger
  • Patent number: 8692343
    Abstract: The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the active layers (such as AP1, SIL, FGL, and Free layers). An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: April 8, 2014
    Assignee: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Min Li, Yuchen Zhou
  • Publication number: 20140084401
    Abstract: A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %).
    Type: Application
    Filed: March 14, 2013
    Publication date: March 27, 2014
    Inventors: Kabushiki Kaisha Toshiba, Tohoku University
  • Patent number: 8680633
    Abstract: A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %).
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 25, 2014
    Assignees: Kabushiki Kaisha Toshiba, Tohoku University
    Inventors: Yushi Kato, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki
  • Patent number: 8637947
    Abstract: A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: January 28, 2014
    Assignee: Sony Corporation
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
  • Patent number: 8629518
    Abstract: A magnetic tunnel junction (MTJ) etching process uses a sacrifice layer. An MTJ cell structure includes an MTJ stack with a first magnetic layer, a second magnetic layer, and a tunnel barrier layer in between the first magnetic layer and the second magnetic layer, and a sacrifice layer adjacent to the second magnetic layer, where the sacrifice layer protects the second magnetic layer in the MTJ stack from oxidation during an ashing process. The sacrifice layer does not increase a resistance of the MTJ stack. The sacrifice layer can be made of Mg, Cr, V, Mn, Ti, Zr, Zn, or any alloy combination thereof, or any other suitable material. The sacrifice layer can be multi-layered and/or have a thickness ranging from 5 ? to 400 ?. The MTJ cell structure can have a top conducting layer over the sacrifice layer.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: January 14, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Jen Wang, Ya-Chen Kao, Chun-Jung Lin
  • Patent number: 8604573
    Abstract: According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on a semiconductor substrate, the first magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; a non-magnetic layer formed on the first magnetic layer; a second magnetic layer formed on the non-magnetic layer, the second magnetic layer having an easy axis of magnetization perpendicular to a film surface thereof; and a sidewall film provided so as to cover a sidewall of each of the magneto-resistance elements with a protective film interposed therebetween, the sidewall film providing a tensile stress to the magneto-resistance element along the easy axis of magnetization.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: December 10, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Yamakawa, Katsuaki Natori, Daisuke Ikeno, Yasuyuki Sonoda
  • Patent number: 8576616
    Abstract: According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: November 5, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Daisuke Saida, Minoru Amano, Junichi Ito, Yuichi Ohsawa, Saori Kashiwada, Chikayoshi Kamata, Tadaomi Daibou
  • Patent number: 8564080
    Abstract: A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: October 22, 2013
    Assignee: QUALCOMM Incorporated
    Inventors: Wei-Chuan Chen, Seung H. Kang, Xiaochun Zhu, Xia Li
  • Patent number: 8558333
    Abstract: A method for manipulating domain pinning and reversal in a ferromagnetic material comprises applying an external magnetic field to a uniaxial ferromagnetic material comprising a plurality of magnetic domains, where each domain has an easy axis oriented along a predetermined direction. The external magnetic field is applied transverse to the predetermined direction and at a predetermined temperature. The strength of the magnetic field is varied at the predetermined temperature, thereby isothermally regulating pinning of the domains. A magnetic storage device for controlling domain dynamics includes a magnetic hard disk comprising a uniaxial ferromagnetic material, a magnetic recording head including a first magnet, and a second magnet. The ferromagnetic material includes a plurality of magnetic domains each having an easy axis oriented along a predetermined direction.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: October 15, 2013
    Assignees: The University of Chicago, UCL Business PLC
    Inventors: Daniel M. Silevitch, Thomas F. Rosenbaum, Gabriel Aeppli
  • Publication number: 20130239702
    Abstract: One embodiment of the present invention relates to a device, such as a sensor device. The device includes a sensor die and a circuit die. The sensor die includes a sensor and a feedback component. The circuit die includes circuitry. The circuit die is varied from the sensor die, such as comprising a varied substrate material. The circuitry is coupled to the sensor and the feedback component. The circuitry and the feedback component can communicate correlation information.
    Type: Application
    Filed: March 15, 2012
    Publication date: September 19, 2013
    Applicant: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 8536669
    Abstract: According to an embodiment of the invention, a magnetic tunnel junction (MTJ) element includes a reference ferromagnetic layer, a storage ferromagnetic layer, and an insulating layer. The storage ferromagnetic layer includes a CoFeB sub-layer coupled to a CoFe sub-layer and/or a NiFe sub-layer through a non-magnetic sub-layer. The insulating layer is disposed between the reference and storage ferromagnetic layers.
    Type: Grant
    Filed: January 13, 2009
    Date of Patent: September 17, 2013
    Assignee: QUALCOMM Incorporated
    Inventors: Xiaochun Zhu, Xia Li, Seung H. Kang
  • Patent number: 8513751
    Abstract: A memory includes a semiconductor substrate. Magnetic tunnel junction elements are provided above the semiconductor substrate. Each of the magnetic tunnel junction elements stores data by a change in a resistance state, and the data is rewritable by a current. Cell transistors are provided on the semiconductor substrate. Each of the cell transistors is in a conductive state when the current is applied to the corresponding magnetic tunnel junction element. Gate electrodes are included in the respective cell transistors. Each of the gate electrodes controls the conductive state of the corresponding cell transistor. In active areas, the cell transistors are provided, and the active areas extend in an extending direction of intersecting the gate electrodes at an angle of (90-a tan(?)) degrees.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: August 20, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yoshiaki Asao
  • Patent number: 8508006
    Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
    Type: Grant
    Filed: July 30, 2012
    Date of Patent: August 13, 2013
    Assignee: MagIC Technologies, Inc.
    Inventors: Guenole Jan, Ru-Ying Tong, Yu-Jen Wang
  • Publication number: 20130187248
    Abstract: The present invention makes it possible to inhibit an MR ratio from decreasing by high-temperature heat treatment in a magnetoresistive effect element using a perpendicular magnetization film. The magnetoresistive effect element includes a data storage layer, a data reference layer, and an MgO film interposed between the data storage layer and the data reference layer. The data storage layer includes a CoFeB film coming into contact with the MgO film, a perpendicular magnetization film, and a Ta film interposed between the CoFeB film and the perpendicular magnetization film. The CoFeB film is magnetically coupled to the perpendicular magnetization film through the Ta film.
    Type: Application
    Filed: January 17, 2013
    Publication date: July 25, 2013
    Applicant: Renesas Electronics Corporation
    Inventor: Renesas Electronics Corporation