Abstract: A chip structure comprising a silicon substrate, a MOS device, dielectric layers, a metallization structure, a passivation layer, a plurality of metal layers and a polymer layer. The metallization structure comprises a first circuit layer and a second circuit layer over the first circuit layer, and comprises a damascene electroplated copper. The passivation layer is over the metallization structure and dielectric layers, the passivation layer including a first opening exposing a contact point of the metallization structure. The polymer layer is disposed over the passivation layer and the first metal layer, a second opening in the polymer layer being over a second contact point of the first metal layer, the polymer layer covering a top surface and sidewall of the first metal layer. The second contact point is connected to the first contact point through the first opening, the second opening not being vertically over the first opening.

Abstract: An apparatus and method for a semiconductor package including a bump on input-output (IO) structure are disclosed involving a device pad, an under bump metal pad (UBM), a polymer, and a passivation layer. The shortest distance from the center of the device pad to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.5:1 to 0.95:1. Also, the shortest distance from the center of the polymer to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.35:1 to 0.85:1. Additionally, the shortest distance from the center of the passivation layer to its outer edge, and the shortest distance from the center of the UBM to its outer edge are in a ratio from 0.35:1 to 0.80:1.

Abstract: Methods for die-to-die wire-bonding, and devices and systems formed thereby, are described herein. A die to die wire-bonding method may comprise bonding a first conductive bump having a first bump size to a first die pad; bonding a first wire to a second die pad, the first wire bonded to the second die pad by a second conductive bump having a second bump size, the second bump size being smaller than the first bump size; and bonding the first wire to the first conductive bump.

Abstract: A self-aligned wafer or chip structure including a substrate, at least one first concave base, at least one second concave base, at least one connecting structure and at least one bump is provided. The substrate has a first surface and a second surface, and at least one pad is formed on the first surface. The first concave base is disposed on the first surface and electrically connected to the pad. The second concave base is disposed on the second surface. The connecting structure passes through the substrate and disposed between the first and second concave bases so as to be electrically connected to the first and second concave bases. The bump is filled in the second concave base and protrudes out of the second surface.

Abstract: A semiconductor package with improved joint reliability and a method of fabricating the semiconductor package are disclosed. A conductive connector may be formed on a surface of a semiconductor wafer on which semiconductor devices may be arranged. A first insulating layer including a first opening through which a portion of the connection pad is exposed may be formed on the connection pad and the semiconductor wafer. A rewiring line electrically connected to an exposed portion of the connection pad may be formed on the first insulating layer. A second insulating layer including a second opening through which a portion of the rewiring line is exposed may be formed on the rewiring line and the first insulating layer. A connection terminal including one or more entangled wires may be formed on an exposed portion of the rewiring line so as to be electrically connected to the rewiring line.

Abstract: A semiconductor chip packaging on a flexible substrate is disclosed. The chip and the flexible substrate are provided with corresponding raised and indented micron-scale contact pads with the indented contact pads partially filled with a liquid amalgam. After low temperature amalgam curing, the chip and the substrate form a flexible substrate IC packaging with high conductivity, controllable interface layer thickness, micron-scale contact density and low process temperature. Adhesion between the chip and the substrate can be further enhanced by coating other areas with non-conducting adhesive.

Abstract: A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposes said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; depositing a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposes said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first pattern-defining layer; and removing said first metal layer not under said second metal layer.

Abstract: A packaging substrate having an electrical connection structure and a method for fabricating the same are provided. The packaging substrate have a substrate body with a plurality of conductive pads on a surface thereof; a solder mask layer disposed on the substrate body with a plurality of openings corresponding to the conductive pads, the size of each of the openings being larger than each of the conductive pads; and electroplated solder bumps for covering the conductive pads to provide better bond strength and reliability.

Abstract: An integrated circuit package system includes an integrated circuit die, a first controlled bump over the integrated circuit die, a second controlled bump over the integrated circuit die, and a connector between the first controlled bump and the second controlled bump.

Abstract: There is provided a semiconductor package comprising: a multilayer thin film structure including a plurality of dielectric layers and at least one or more redistribution layers; a semiconductor chip positioned at one side of the multilayer thin film structure and electrically connected to the redistribution layer; and a solder bump formed at the other side of the multilayer thin film structure. The multilayer thin film structure functions as the substrate for the semiconductor package and realizes the light, thin, short and small BGA package without any additional substrate. A plurality of the packages can be simultaneously formed at wafer level or carrier level, to simplify the process and to be favorable for mass production.

Abstract: The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.

Abstract: Disclosed is a low cost memory IC package assembly having a first metal layer bonded to the die and a dielectric insulating layer with circuits and with apertures to expose the first metal layer bonded thereto.

Abstract: Method for mounting an electronic component, such as a silicon chip, on a support which consists in: providing an electronic component (40) having connection pads, whereof one predetermined pad (41A) is provided with a bump (42); providing a support having (30) to the predetermined pad via the bump; aligning the predetermined pad provided with the bump with the terminal; contacting the bump and the terminal and assembling them in specific temperature and pressure conditions. Prior to contacting and fixing the bump and the terminal, the surface of the terminal is covered with an insulating layer (32), the insulating layer being a material selected so as to be traversed by the bump in the temperature and pressure conditions.

Abstract: A thin stacked semiconductor device has a plurality of circuits that are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiring part, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, and the other surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode, A second insulating layer is formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, and bump electrodes are formed on both electrodes.

Abstract: A semiconductor device includes a chip, a laminated wiring structure formed integrally with the chip, a frame disposed to surround the chip and made of a material having stiffness, and a sealing resin formed to bury therein the frame and at least the periphery of the side surface of the chip. The laminated wiring structure includes a required number of wiring layers, which are formed by patterning in such a manner that a wiring pattern directly routed from an electrode terminal of the chip is electrically connected to pad portions for bonding external connection terminals, the pad portions being provided, at a position directly below a mounting area of the chip and at a position directly below an area outside the mounting area, on a surface to which the external connection terminals are bonded.

Abstract: A resin coated copper foil is used to fabricate a multilayer Chip Scale Package (CSP). A CSP package base has a first electrical routing layer. A resin coated copper foil is hot pressed onto the CSP package base and then patterned to form a second electrical routing layer. Conductive vias are then formed between the electrical routing layers. An Organic Solder Preservative (OSP) is used a surface finish for solder balls of the CSP.

Abstract: A test structure to detect vertical leakage in a multi-layer flip chip pad stack or similar semiconductor device. The test structure is integrated into the semiconductor device when it is fabricated. A metal layer includes at least two portions that are electrically isolated from each other; one portion being disposed under a test pad, and another portion being disposed under a pad associated with a pad structure being tested. The metal layer in most cases is separated from a top metal layer directly underlying the pads by an inter-metal dielectric (IMD) layer. A metal layer portion underlying the pad to be tested forms a recess in which a conductive member is disposed without making electrical contact. The conductive line is electrically coupled to a test portion of the same or, alternately, of a different metal layer. The test structure may be implemented on multiple layers, with recesses portions underlying the same or different pads.

Abstract: In a hybrid integrated circuit device that is a circuit device of the present invention, a conductive pattern including pads is formed on a surface of a substrate. A first pad is formed to be relatively large since a heat sink is mounted thereon. A second pad is a small pad to which a chip component or a small signal transistor is fixed. In the present invention, a plated film made of nickel is formed on a surface of the first pad. Therefore, the first pad and a solder never come into contact with each other. Thus, a Cu/Sn alloy layer having poor soldering properties is not generated but a Ni/Sn alloy layer having excellent soldering properties is generated. Consequently, occurrence of sink in the melted solder is suppressed.

Abstract: A support with solder ball elements for loading substrates with ball contacts is disclosed. One embodiment provides a system for loading substrates with ball contacts and a method for loading substrates with ball contacts. The support has a layer of adhesive applied on one side, the layer of adhesive losing its adhesive force to the greatest extent when irradiated. The support has solder ball elements, which are arranged closely packed in rows and columns on the layer of adhesive in a prescribed pitch for a semiconductor chip or a semiconductor component.

Abstract: An electrical structure and method of forming. The electrical structure includes a first substrate, first dielectric layer, an underfill layer, and a second substrate. The first dielectric layer is formed over a top surface of the first substrate. The first dielectric layer includes a first opening extending through a top surface and a bottom surface of said first dielectric layer. The underfill layer is formed over the top surface of the first dielectric layer and within the first opening. The second substrate is formed over and in contact with the underfill layer.

Abstract: A semiconductor component and a method for its production in semiconductor chip size, can have a semiconductor chip, which has external contacts of the semiconductor component that are arranged in the manner of a flip-chip on its active upper side. The semiconductor chip can be encapsulated by a plastic compound at least on its rear side and its side edges. The outer contacts, which can be arranged on external contact connecting areas, can project from the active upper side.

Abstract: Semiconductor packages that contain a system-in-a-package and methods for making such packages are described. The semiconductor packages contain a first semiconductor die resting on a middle of a land pad array, a second die disposed over the first die and resting on routing leads that are connected to the land pad array, a third die resting on the backside of the second die and connected to the land pad array by wire bonds, and a passive device and/or a discrete device resting on device pads. The packages also contain thermal pads which operate as a heat sink. The land pad array is formed from etching the leadframe. The semiconductor packages have a full land pad array with a thin package size while having a system-in-a-package design. Other embodiments are also described.

Abstract: A semiconductor package structure includes a carrier, a chip or multi-chips mounted on a top surface of the carrier, a molding compound encapsulating the top surface and the chips, a plurality of solder balls distributed on a bottom surface of the carrier, and a protection bar formed of thermosetting plastic material formed on the bottom surface.

Abstract: A microelectronic element and a related method for fabricating such is provided. The microelectronic element comprises a contact pad overlying a major surface of a substrate. The contact pad has a composition including copper at a contact surface. A passivation layer is also provided overlying the major surface of the substrate. The passivation layer overlies the contact pad such that it exposes at least a portion of the contact surface. A plurality of metal layers arranged in a stack overlie the contact surface and at least a portion of the passivation layer. The stack includes multiple layers, which can have different thicknesses and different metals, with the lowest layer including titanium (Ti) and nickel (Ni) in contact with the contact surface.

Abstract: A semiconductor package containing a field effect transistor (FET) used in a high frequency band includes a mounting circuit substrate on which the semiconductor device is mounted. The mounting circuit substrate has a gate wiring conductor, a drain wiring conductor, and a source wiring conductor, which are connected to the gate electrode, the drain electrode, and the source electrode, respectively, of the semiconductor device. The gate wiring conductor and the drain wiring conductor extend toward each other so that their adjacent or facing ends are in close proximity to each other, thereby increasing the capacitance between the gate wiring conductor and the drain wiring conductor.

Abstract: Methods for making, and structures so made for producing integrated circuit (IC) chip packages without forming micro solder balls. In one embodiment, a method may include placing a solid grid made from an organic material between the IC chip and the substrate. The grid provides a physical barrier between each of a plurality of Controlled Collapse Chip Connections, and thereby prevents the formation of micro solder balls between them, thus improving chip performance and reliability.

Abstract: A method and device for input/output connections is provided. Devices and methods for connection structure are shown with improved mechanical properties such as hardness and abrasion resistance. Land grid array structures are provided that are less expensive to manufacture due to reductions in material cost such as gold. Ball grid array structures are provided with improved resistance to corrosion during fabrication. Ball grid array structures are also provided with improved mechanical properties resulting in improved shock testing results.

Abstract: Systems and methods are disclosed herein for determining the placement of a standard cell, representing a semiconductor component in a design stage, on an integrated circuit die. One embodiment of a method, among others, comprises analyzing regions of a semiconductor die with respect to the susceptibility of the region to be exposed to radiation. This method further comprises placing the standard cell in one of the analyzed regions of the semiconductor die, the standard cell being placed based on the sensitivity of the standard cell to radiation. The method may also comprise running an algorithm, e.g. using a component placement engine, for determining the placement of semiconductor components on an integrated circuit die.

Abstract: Disclosed is an under bump metallization structure including a plurality of metal or metal alloy layers formed on chip bond pads. The disclosed UBM structure has a stress improvement on the semiconductor device because the thickness of the copper-base layer is reduced to between about 0.3 and 10 microns, preferably between about 0.3 and 2 micron. The presence of the pure tin layer prevents oxidation and contamination of the nickel-base layer. It also forms a good solderable surface for the subsequent processes. Also disclosed are semiconductor devices having the disclosed UBM structure and the methods of making the semiconductor devices.

Abstract: A method for connecting substrates having electrical conductive elements thereon, comprising: providing at least one spacer between the substrates; applying a conductive material to at least one of the electrical conductive elements; aligning the electrical conductive elements; and, connecting the substrates by urging them together, wherein the at least one spacer prevents lateral spreading of the conductive material on the substrates from bridging a distance between adjacent conductive elements during the connecting.

Abstract: A semiconductor device has a semiconductor chip provided with an insulating layer formed so as to be thinner in a first secondary-wire-free area than in a first secondary-wire-containing area. Further, the semiconductor chip has an edge extending further outward than a side wall, which severs as an edge of an upper insulating layer, in an extending direction of a circuit-forming surface of the semiconductor chip on which electrode pads are provided. This makes it possible to provide a semiconductor device capable of suppressing electromagnetic interference between a secondary wire and an electronic circuit of a semiconductor chip and the curvature of a wafer even in the case of overlap between the secondary wire and the electronic circuit, and of reducing the risk of occurrence of chipping in a dicing step.

Abstract: A method for establishing an electrical connection between a first contact surface and a second contact surface, with a wire-bonding tool being used to provide a contact wire between the contact surfaces by bonding the contact wire to the first contact surface and subsequently leading it to the second contact surface, bonding it to the latter, and subsequently, separating it using the wire-bonding tool. After the contact wire has been separated from the second contact surface, the wire-bonding tool is used to provide the contact point with an additional contact securing element via the contact wire.

Abstract: A semiconductor device is provided in which a semiconductor chip is bonded to a substrate with a sufficiently increased bonding strength and cracking is assuredly prevented which may otherwise occur due to heat shock, heat cycle and the like. The semiconductor device includes a semiconductor chip and a substrate having a bonding area to which the semiconductor chip is bonded via a metal layer. The metal layer includes an Au—Sn—Ni alloy layer and a solder layer provided on the Au—Sn—Ni alloy layer. Undulations are formed in an interface between the Au—Sn—Ni alloy layer and the solder layer.

Abstract: Electrode pads (5) and a solder resist (7) are disposed on the upper surface of a wiring board (1), and apertures (7a) are formed in the solder resist (7) so as to expose the electrode pads (5). Electrodes (4) are disposed on the lower surface of a semiconductor element (2). Electrodes (4) are connected to the electrode pads (5) by way of bumps (3). An underfill resin (6) is disposed in the area that excludes the solder resist (7) and the bumps (3) in the space between the wiring board (1) and the semiconductor element (2). Between the wiring board (1) and the semiconductor element (2), the thickness (B) of the solder resist (7) is equal to or greater than the thickness (A) of the underfill resin (6) on the solder resist (7). The volume (Vb) of the bumps (3) is less than the volume (Vs) of the apertures (7a).

Abstract: A printed circuit board according to the present invention is a printed circuit board (4) including a component mounting pin (1) made of a metal wire to connect with a semiconductor chip (10). The semiconductor chip (10) is a surface mounting type semiconductor chip having an electrode pad on its mounting surface for use in a flip-chip mounting system. The component mounting pin (1) is formed by using wire-bonding technology. This printed circuit board (4) is able to decrease malconnections or disconnection caused by a difference between the coefficients of thermal expansion of the semiconductor chip (10) and the printed circuit board (4).

Abstract: For electrically connecting a wiring formed on one surface of an insulating substrate such as an FPC to an individual electrode arranged facing the other surface of the substrate, firstly, a through hole and a notch are formed by irradiating a laser beam from above onto the FPC. Next, the FPC is arranged to be positioned such that the individual electrode, the through hole and the notch are overlapped in a plan view. Next, an electroconductive liquid droplet having a diameter greater than a width of the notch is jetted, toward an area formed with the notch, from the one surface side of the FPC. The landed electroconductive liquid droplet flows along the notch in a thickness direction of the substrate due to an action of a capillary force and reaches assuredly to the individual electrode, thereby electrically connecting the wiring and electrode arranged sandwiching the insulating substrate assuredly.

Abstract: Semiconductor device assemblies and systems that include at least one semiconductor device assembly include two or more semiconductor devices stacked one over another. Conductive pathways that extend around at least one side of at least one of the semiconductor devices provide electrical communication between conductive elements of the semiconductor devices, and optionally, a substrate. The conductive pathways may include self-supporting conductive leads or conductive traces carried by a substrate. Methods for forming semiconductor device assemblies having more than one semiconductor device include bending or wrapping at least one conductive pathway around a side of at least one semiconductor device and providing electrical communication between semiconductor devices of the assembly through the conductive pathways.

Abstract: A method of forming a semiconductor device including a semiconductor substrate with circuit elements and electrode pads formed on one surface. This surface is covered by a dielectric layer with openings above the electrode pads. A metal layer is deposited on the dielectric layer and patterned to form a conductive pattern with traces leading to the electrode pads. A protective layer having openings exposing part of the conductive pattern is formed. Each opening is covered by an electrode such as a solder bump, which is electrically connected through the conductive pattern to one of the electrode pads. The method enables the thickness of the protective layer, which may function as a package of the semiconductor device, to be reduced. The protective layer may be formed from a photosensitive material, simplifying the formation of the openings for the electrodes.

Abstract: Provided are a rotation joint capable of compensating for a mismatch due to thermal expansion and a semiconductor device having the same. The rotation joint can include a support member and a first contact member coupled to a first portion of the support member such that a surface of the first contact member is moveable relative to a surface of the support member adjacent to the first contact member. The first contact member can include solder material.

Abstract: In a semiconductor apparatus having a plurality of wiring layers, the semiconductor apparatus includes a bonding pad formed by an uppermost wiring layer, a first-layer plug wire formed by a first lower wiring layer in a region under the bonding pad, and a first conductive plug connecting the bonding pad and the first-layer plug wire. The first-layer plug wire may include a plurality of first-layer plug wires arranged in parallel to one another in a stripe pattern.

Abstract: A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length.

Abstract: A flip-chip package may include: a semiconductor chip having first pads arranged substantially along a first direction; a substrate having second pads, arranged substantially in a zigzag form aligned with the first pads as a center line, and facing the semiconductor chip; and conductive bumps for electrically connecting the first pads to the second pads in a one-to-one relationship. Adjacent conductive bumps may extend in different directions. A method of manufacturing a flip-chip package may include: forming conductive bumps that extend along different directions on first pads of a semiconductor chip; and connecting second pads of a substrate to the conductive bumps in a one-to-one relationship. A method of manufacturing a flip-chip package may include: forming conductive bumps that extend along different directions on second pads of a substrate; and connecting first pads of a semiconductor chip to the conductive bumps in a one-to-one relationship.

Abstract: One inventive aspect is related to a method of bonding two elements and micro-electronic devices produced according to such methods. In one aspect, a micro-electronic device includes a first and a second element, bonded together by a joining structure. The joining structure has a first micropattern portion, a second micropattern portion, and a joining portion in between the first and second micropattern portions. The first and second micropattern portions are made of cobalt. The joining portion includes intermetallic compounds of cobalt and tin (Sn).

Abstract: A compliant bonding structure is disposed between a semiconductor light emitting device and a mount. When the semiconductor light emitting device is attached to the mount, for example by providing pressure, heat, and/or ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

Abstract: A semiconductor device includes a first substrate, a plurality of cell transistors and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The plurality of cell transistors is formed extending on the first surface of the first substrate in a direction. The second substrate has an upper surface making contact with the second surface of the first substrate. Further, the upper surface of the second substrate has a bent structure to apply tensile stresses to the first substrate in the extending direction of the plurality of cell transistors. Thus, tensile stresses may be applied to the first substrate to improve the mobility of carriers in a channel region of the cell transistors.

Abstract: Provided are a semiconductor package in which bonding pads of a semiconductor chip are electrically connected to interconnection portions by wire-bonding, and a method of manufacturing the semiconductor package. The semiconductor package includes: a substrate; an interconnection portion that is disposed on the substrate and comprises conductive patterns having a first thickness and conductive patterns having a second thickness that is smaller than the first thickness; at least one semiconductor chip that is mounted on the substrate and comprises a plurality of bonding pads; and a plurality of wires electrically connecting the conductive patterns and the bonding pads.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a base package having a base interposer; forming an intermediate package having an intermediate interposer and an intermediate package embedded link trace, the intermediate package embedded link trace being encapsulated in an intermediate package mold compound; forming a cap package having a cap interposer; and connecting the intermediate package to the cap package and the base package using the intermediate package embedded link trace.

Abstract: A semiconductor device having conductive bumps and a fabrication method thereof is proposed. The fabrication method includes the steps of forming a first metallic layer on a substrate having solder pads and a passivation layer formed thereon, and electrically connecting it to the solder pads; applying a second covering layer over exposed parts of the first metallic layer; subsequently, forming a second metallic layer on the second covering layer, and electrically connecting it to the exposed parts of the first metallic layer; applying a third covering layer, and forming openings for exposing parts of the second metallic layer to form thereon a conductive bump having a metallic standoff and a solder material. The covering layers and the metallic layers can provide a buffering effect for effectively absorbing the thermal stress imposed on the conductive bumps to prevent delamination caused by the UBM layers.

Abstract: A stack of semiconductor dies is disclosed. A first stack level includes a first semiconductor die and at least one first support that are attached to a substrate surface. A second level includes a second semiconductor die and at least one second support that are attached to the active surface of the first semiconductor die and to a coplanar surface of the first support(s). A third level includes a third semiconductor die attached to the active surface of the second semiconductor die and to a coplanar surface of the second support(s). The second and third semiconductor dies do not overlap bond pads of the first and second semiconductor dies, respectively. An adhesive film overlies the entire inactive surface of the second and third semiconductor dies, and attaches the second and third semiconductor dies to the immediately underlying active surface and support(s).

Abstract: The present invention includes an integrated circuit package, a ball-grid array integrated circuit package, a method of packaging an integrated circuit, and a method of forming an integrated circuit package. According to one aspect, the present invention provides an integrated circuit package including a substrate including a first surface, a second surface and a plurality of conductors, the first surface includes a plurality of conductive pads adapted to couple with a plurality of corresponding bond pads of a semiconductor die, and the conductors being configured to couple the conductive pads with the second surface; and a plurality of conductive bumps coupled with the second surface of the substrate and electrically coupled with respective conductors, the conductive bumps being formed in an array including a plurality of power bumps and signal bumps, and the signal bumps being individually positioned immediately adjacent at least one power bump.