With Specific Housing Or Contact Structure Patents (Class 257/81)
  • Patent number: 11098865
    Abstract: According to an embodiment, a light source-solar cell complex comprises a plurality of layers receiving light to generate current or receiving power to emit a preset wavelength band of light and a plurality of connectors grown between the layers and transferring the current generated from the layers to an outside or transferring power from the outside to each layer.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: August 24, 2021
    Inventor: Hyojin Kim
  • Patent number: 11094689
    Abstract: An electronic component includes a first contact point for n-side contacting, a second contact point for p-side contacting, and a protective diode, which is connected antiparallel to the first contact point and to the second contact point. The protective diode includes a first diode structure which is p-conductive and a second diode structure which is n-conductive. The first diode structure is formed as a layer which overlaps in places with the first contact point in a first overlap region. The second diode structure is formed as a layer which overlaps in places with the second contact point in a second overlap region. The first diode structure and the second diode structure overlap each other in a third overlap region.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: August 17, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Ivar Tangring, Thomas Schlereth
  • Patent number: 11039532
    Abstract: Provided is a printed circuit board using thermally and electrically conductive layer, and a manufacturing method thereof. The manufacturing method for mounting a plurality of elements includes forming an electrode layer on a substrate of a PCB, forming a photo solder resist (PSR) layer in a patterned manner on a first area of the electrode layer; forming a conductive layer on the PSR layer in the patterned manner, the conductive layer being configured to conduct heat and static electricity; and mounting a plurality of elements on a second area of the side of the PCB, the second area being different from the first area.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: June 15, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Taehyeun Ha, Taeje Park
  • Patent number: 11016268
    Abstract: Optics systems presented are arranged as high-performance imagers particularly characterized by their exceptional compactness in view of image quality. A plurality of lens and let's and or doublets are configured to cooperate with related mount systems optimized for compactness. To achieve very high resolution imaging despite somewhat abbreviated compound lens design, these systems include use of lens array elements proximate to an imaging plane. So placed lens array devices may be designed with lens elements which invariably operate on incident wave planes with radial dependence. That is, the focusing strength of lenses from which these lens arrays are comprised may depend upon its distance from system optic axis. This enables an imaging correction function that counters distortion and other undesirable imaging errors typically present in a simplified compound lens systems.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: May 25, 2021
    Assignee: ALMALENCE INC.
    Inventor: Dmitry Valerievich Shmunk
  • Patent number: 10998300
    Abstract: A display unit is provided, on a substrate, with a first wiring layer and a device section. The device section has a plurality of pixels. The device section includes, in each of the pixels, a light-emitting device section and a drive device. The light-emitting device section includes a light-emitting device and a light-emitting surface. The drive device drives the light-emitting device section and is electrically coupled to the light-emitting device section through the first wiring layer. An end of the light-emitting surface of the light-emitting device section is disposed at a position as high as an upper end of the drive device, or at a position higher than the upper end.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: May 4, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Toshiaki Hasegawa, Kenichi Aoyagi, Nobutatsu Araki, Tsuyoshi Jyouno, Katsunori Ootsubo, Yoshiya Hagimoto, Yasuhiro Mizuma
  • Patent number: 10971894
    Abstract: Various embodiments of a laser driver are described herein. In an embodiment, a laser driver system includes: an external set of inductors including a first external inductor and a second external inductor; an internal set of inductors including a first internal inductor and a second internal inductor; and a DC-to-DC convertor configured to bias a first output path defined by the first external inductor and the first internal inductor and a second output path defined by the second external inductor and the second internal inductor.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: April 6, 2021
    Assignee: Maxim Integrated Products, Inc.
    Inventors: Qingsheng Tan, James Cong Nguyen, Ashok K. Verma
  • Patent number: 10935694
    Abstract: Light scattering particles made of TiO2, BaSO4, SiO2, or Al2O3 have been used in a QD layer of a QD-LED for enhancing luminous intensity. However, the light scatters are found to decline the light conversion efficiency of the QD layer. In view of that, the present invention particularly discloses a light conversion material with high conversion efficiency for use in the QD-LED. The light conversion material mainly comprises a polymer matrix, a plurality of 3D photonic crystals dispersed in the polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, wherein each of the plurality of 3D photonic crystals is formed by applying a self-assembly process to a plurality of polymer beads. Moreover, a variety of experimental data have proved that, this light conversion material indeed exhibits outstanding photoluminescence intensity and light conversion efficiency both superior than that of the conventionally-used QD layer.
    Type: Grant
    Filed: June 23, 2018
    Date of Patent: March 2, 2021
    Inventors: Hsueh-Shih Chen, Shih-Jung Ho
  • Patent number: 10910507
    Abstract: A semiconductor package device comprises a substrate, a light emitter, a light detector and a transparent conductive film. The substrate as a first surface and a second surface opposite to the first surface. The light emitter is disposed on the first surface of the substrate and has a light emission area adjacent to the first surface of the substrate. The light detector is disposed on the first surface of the substrate and has a light receiving area adjacent to the first surface of the substrate. The transparent conducting film is disposed on the second surface of the substrate.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: February 2, 2021
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Cheng-Ling Huang, Ying-Chung Chen
  • Patent number: 10902770
    Abstract: To enable manufacturing of a display device with a low defect rate and high yield, an integrated circuit chip includes a drive circuit that drives a light emitting unit, and the drive circuit includes a P-side electrode connected to an anode of the light emitting unit and a nonvolatile memory transistor that controls current supply to the P-side electrode.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: January 26, 2021
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Katsuji Iguchi, Tsuyoshi Ono
  • Patent number: 10903619
    Abstract: A multi-wavelength integrated device (5) including plural semiconductor lasers (6) and plural modulators (7) modulating output beams of the plural semiconductor lasers (6) respectively is mounted on the stem (1). Plural leads (10) penetrates through the stem (1) and are connected to the plural semiconductor lasers (6) and the plural modulators (7) respectively. Each lead (10) is a coaxial line in which plural layers are concentrically overlapped with one another. The coaxial line includes a high frequency signal line (12) transmitting a high frequency signal to the modulator (7), a GND line (14), and a feed line (16) feeding a DC current to the semiconductor laser (6). The high frequency signal line (12) is arranged at a center of the coaxial line. The GND line (14) and the feed line (16) are arranged outside the high frequency signal line (12).
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: January 26, 2021
    Assignee: Mitsubishi Electric Corporation
    Inventor: Kazuhisa Takagi
  • Patent number: 10895350
    Abstract: A light-emitting device package includes a metalized substrate, a light-emitting diode (LED) die, and a single primary optic. The metalized substrate includes a top surface, pads on the top surface, and traces extending from the pads. The LED die is mounted on the pads of the metalized substrate. The LED die includes individually addressable segments. Each segment includes one or more junctions. The primary optic is located over the LED die.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: January 19, 2021
    Assignee: Lumileds LLC
    Inventor: Kenneth John Vampola
  • Patent number: 10897119
    Abstract: Techniques and circuitry for a semiconductor laser with enhanced lasing wavelengths stabilization are described. A semiconductor laser can generate an optical signal (e.g., single or multi-wavelength), for use in a Dense Wavelength Division Multiplexing (DWDM) interconnect system. The stabilization circuitry can include temperature sensor circuitry that measures an operational temperature of the semiconductor laser, and a feedback controller that can determine a temperature-induced wavelength shift that may be experienced by the multi-wavelength optical signal based on the laser's temperature. The feedback controller is also configured to generate a compensation signal that is determined to cause a complimentary shift in the multi-wavelength optical signal, where the complimentary shift can compensate for the temperature-induced wavelength shift.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: January 19, 2021
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Geza Kurczveil, Di Liang, Zhihong Huang, Xiaoge Zeng, Raymond G. Beausoleil
  • Patent number: 10892382
    Abstract: A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: January 12, 2021
    Assignee: NICHIA CORPORATION
    Inventor: Masahiko Sano
  • Patent number: 10866373
    Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Hsing-Kuo Hsia, Sung-Hui Huang, Kuan-Yu Huang, Kuo-Chiang Ting, Shang-Yun Hou, Chi-Hsi Wu
  • Patent number: 10763394
    Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: September 1, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Yong Gyeong Lee, Min Sung Kim, Su Ik Park, Youn Joon Sung, Kwang Yong Choi
  • Patent number: 10741726
    Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: August 11, 2020
    Assignee: BRIDGELUX INC.
    Inventors: Frank T. Shum, William W. So, Steven D. Lester
  • Patent number: 10727438
    Abstract: An OLED component is disclosed, which relates to the technical field of display panel. The OLED component comprises a TFT substrate, a coating zone, a sealant, a cover and a photo spacer. The coating zone is located at a center of the TFT substrate; the sealant is arranged around the coating zone; the cover is arranged above the coating zone and the sealant; and the photo spacer is arranged on an upper surface of the coating zone for supporting the cover. Since the photo spacer is arranged on the upper surface of the coating zone, an alignment accuracy can be improved, and the OLED component can be easily manufactured. Meanwhile, a cell thickness uniformity of a large-sized panel can be maintained, and occurrence of Newton rings can be avoided.
    Type: Grant
    Filed: July 4, 2017
    Date of Patent: July 28, 2020
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Wenjie Li, Tsung Yuan Wu
  • Patent number: 10714526
    Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: July 14, 2020
    Assignee: Sony Corporation
    Inventor: Yosuke Ogata
  • Patent number: 10712513
    Abstract: Methods and systems for two-dimensional mode-matching grating couplers may include in a photonic chip comprising a grating coupler at a surface of the photonic chip, where the grating coupler has increased scattering strength in a direction of a light wave traveling through the grating coupler: receiving an optical signal from a first direction within the photonic chip; and scattering the optical signal out of the surface of the photonic chip. A second optical signal may be received in the grating coupler from a second direction within the photonic chip. The second optical signal may be scattered out of the surface of the photonic chip. The increasing scattering strength may be caused by increased width scatterers along a direction perpendicular to the direction of light travel. The increased scattering strength may be caused by a transition of shapes of scatterers in the grating coupler.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: July 14, 2020
    Assignee: Luxtera, LLC
    Inventors: Roman Bruck, Attila Mekis
  • Patent number: 10704748
    Abstract: A light module includes a module main body and a flexible substrate. The module main body has a stem, and a high frequency lead and a DC lead. The flexible substrate has a stem contact portion in contact with the lower surface of the stem. A high frequency through-hole and a DC through-hole are formed in the stem contact portion in which the high frequency lead and the DC lead are respectively inserted. The flexible substrate includes plural surface wirings, a ground wiring provided in a first region which contains the high frequency through-hole, but does not contain the DC through-hole on the back surface of the stem contact portion, and an adhesive layer provided in a second region which is a region excluding the first region on the back surface of the stem contact portion.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: July 7, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventor: Masaaki Shimada
  • Patent number: 10700781
    Abstract: A bidirectional optical subassembly, an optical transceiver including the same, and methods of making and using the same are disclosed. The optical subassembly includes a photodiode configured to receive an incoming optical signal, a transmitter configured to transmit an outgoing optical signal, and a passive optical signal processing unit including a filter and a mirror. The filter is at a first predetermined angle relative to an optical path of the outgoing optical signal and is configured to (i) reflect one of the outgoing optical signal and the incoming optical signal and (ii) allow the other of the outgoing optical signal and the incoming optical signal to pass through. The mirror is configured to reflect the one of the outgoing optical signal and the incoming optical signal at a second predetermined angle. The first predetermined angle is adapted to reduce filter insertion losses.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: June 30, 2020
    Assignee: Source Photonics (Chengdu) Co., Ltd.
    Inventors: Xiaohui Tang, Jian Yang, Yong Zhang
  • Patent number: 10655805
    Abstract: Disclosed herein is a multi-element flexible strap light which includes a plurality of light elements disposed on a flexible chassis. The flexible chassis may include a first flexible layer, a printed circuit board, and a second flexible layer. The flexible chassis may be further contained within a third flexible layer, such as a layer of polycarbonate plastic. Further disclosed is a multi-element flexible strap light system which includes a plurality of light elements disposed on a flexible chassis and a remote battery.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: May 19, 2020
    Assignee: ZYNTONY, INC.
    Inventor: Robin Urry
  • Patent number: 10646918
    Abstract: A relay device and a pressure detection device are provided that are configured to eliminate the necessity of calibrating an output value from a pressure sensor in the pressure detection device even when a mold is replaced. A relay device for a pressure detection device provided with a pressure sensor (S1 to Sn) configured to detect an inner pressure in a cavity (CT) of a mold of an injection molding machine is provided. The relay device is integrally fixed to the mold. The relay device includes a storage configured to store specific information of the pressure sensor (S1 to Sn) provided to the mold to detect the inner pressure of the cavity (CT), the cavity (CT) being defined between a fixed-side mold and a movable-side mold of the mold.
    Type: Grant
    Filed: October 10, 2017
    Date of Patent: May 12, 2020
    Assignee: MINEBEA MITSUMI INC.
    Inventor: Yoshimasa Takayama
  • Patent number: 10644204
    Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: May 5, 2020
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Yasuhiro Takenaka, Yoshiki Saito, Shinichi Matsui, Daisuke Shinoda, Takashi Hodota, Hironao Shinohara
  • Patent number: 10622518
    Abstract: A light-emitting device includes an n-semiconductor structure, a p-semiconductor structure and a light-emitting active-region sandwiched therebetween. An n-trough is formed to expose the n-semiconductor structure by removing a first portion of the p-semiconductor structure and the light-emitting active-region. The n-trough surrounds a p-mesa which contains a second portion of the n-semiconductor structure, the p-semiconductor structure and the light-emitting active-region. The n-trough and the p-mesa are path-connected spaces and are formed via lithography and etching using a lithographic mask which is topologically constructed via merging a unit cell's at least two transformations selected from the unit cell's translation, rotation, and reflection transformations.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: April 14, 2020
    Assignee: BOLB INC.
    Inventors: Jianping Zhang, Ling Zhou, Alexander V. Lunev, Ying Gao
  • Patent number: 10615322
    Abstract: In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: April 7, 2020
    Assignee: CRYSTAL IS, INC.
    Inventors: Leo J. Schowalter, Jianfeng Chen, James R. Grandusky
  • Patent number: 10595398
    Abstract: To suppress peeling-off or cracks of a solder-fixing portion, which are caused by vibration during transportation or operation, in an optical modulator with FPC, thereby suppressing deterioration of radio-frequency characteristics of a signal path in an effective manner at low cost. An optical modulator 100 includes a flexible printed circuit (106) that performs electrical connection with a circuit substrate. The flexible printed circuit has a substantially quadrilateral shape. In the flexible printed circuit, a pad (210 and the like), which is electrically connected to the circuit substrate, is provided along one side of the substantial quadrilateral. In addition, in the flexible printed circuit, signal patterns (220 and the like), which are connected to signal lead pins (120 and the like) for signal transmission which is provided in the optical modulator, are provided in another side opposite to the one side.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: March 17, 2020
    Inventors: Norikazu Miyazaki, Toru Sugamata
  • Patent number: 10586749
    Abstract: Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: March 10, 2020
    Inventors: Zhanming Li, Yue Fu, Wai Tung Ng, Yan-Fei Liu
  • Patent number: 10535798
    Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer i
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: January 14, 2020
    Assignee: SEMICON LIGHT CO., LTD.
    Inventors: Soo Kun Jeon, Eun Hyun Park, Yong Deok Kim
  • Patent number: 10529896
    Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: January 7, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Yao-Ru Chang, Wen-Luh Liao, Chun-Yu Lin, Hsin-Chan Chung, Hung-Ta Cheng
  • Patent number: 10510934
    Abstract: A light emitting device includes one or more light emitting elements, a light transmissive member, and a light reflective member. The one or more light emitting elements each includes an upper surface. The light transmissive member has an upper surface and a lower surface. The light reflective member covers surfaces of the light transmissive member and lateral surfaces of the one or more light emitting elements so as to expose the upper surface of the light transmissive member. The upper surface area of the light transmissive member is smaller than a sum of the upper surface areas of the one or more light emitting elements, and the lower surface area of the light transmissive member is larger than a sum of the upper surface areas of the one or more light emitting elements.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: December 17, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Masakatsu Tomonari, Masahiko Sano
  • Patent number: 10502758
    Abstract: Airtightness in a cavity of an inertial sensor (acceleration sensor) is increased to achieve high sensitivity. In the acceleration sensor having movable electrodes VE1, VE2 and fixed electrodes FE1, FE2, the fixed electrodes are formed by portions surrounded by a through hole TH1 provided in a cap layer CL, and the through hole is filled with an insulating film IF1 and polysilicon P and has a wide portion (WP). The wide portion has a gap SP that is not filled with the insulating film IF1 and the polysilicon P, and the gap SP is filled with the interlayer insulating film ID. With such a configuration, degassing can be exhausted through the gap (airway) SP in a pressure reducing step.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: December 10, 2019
    Assignee: Hitachi, Ltd.
    Inventors: Takashi Shiota, Tatsuyuki Saito, Tatemi Ido, Noriyuki Sakuma, Yuudai Kamada, Atsushi Isobe, Chisaki Takubo
  • Patent number: 10465883
    Abstract: An optical module is provided for covering and being assembled on a light source module and providing light distribution and insulation protection for the light source module. The optical module includes a body comprising an optical portion and a power supply drive accommodating portion. The optical module also includes a mounting portion formed to integrally extend from the body. The optical portion is provided with a plurality of lens units that are formed to integrally project along a first direction from a surface of the body. The power supply drive accommodating portion is provided with an accommodating space formed to integrally extend along the first direction from the surface of the body so as to accommodate the power supply drive. The mounting portion at least partially accommodates a magnetic mounting element that includes a nonmagnetic base and a strong magnet which is connected integrally with the nonmagnetic base.
    Type: Grant
    Filed: June 5, 2019
    Date of Patent: November 5, 2019
    Assignee: OPPLE LIGHTING CO., LTD.
    Inventors: Kunlun Zhu, Ruikai Lian, Xuanxiong Gu, Jianguo Li
  • Patent number: 10453827
    Abstract: Light emitting diode (LED) devices and systems include a superstrate (e.g., a light-transmissive layer), LEDs attached to the superstrate at a die-attach layer formed thereon, and an encapsulant layer formed over and/or around the LEDs with a non-reflective or clear material. A method for producing LED devices and systems includes providing a superstrate with a die-attach layer formed thereon, attaching LEDs to the superstrate at the die-attach layer, forming conductive surfaces on a side of the LED opposite the die-attach layer, dispensing an encapsulant layer to at least partially encapsulate the LEDs, and forming one or more metal traces to electrically interconnect the conductive surfaces of at least some of the LEDs with each other.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: October 22, 2019
    Assignee: Cree, Inc.
    Inventors: Christopher P. Hussell, Alan Wellford Dillon, Peter Scott Andrews
  • Patent number: 10454061
    Abstract: This disclosure relates to an organic electroluminescent display device and a method of sealing the same capable of reducing a manufacturing time and a complexity of manufacturing process. The organic electroluminescent display device comprises a first substrate including an active area and a bezel area outside the active area, the first substrate including an organic light emitting layer and a passivation film covering the organic light emitting layer thereon; a second substrate facing to the first substrate; and a filling layer in a space between the first substrate and the second substrate, wherein the filling layer includes; a first region having a first hardness, and spaced apart at a predetermined distance from the a passivation film to surround the protective layer in the bezel area; and a second region having a second hardness lower than the first hardness, and positioned inside the first region to be contacted with the first region.
    Type: Grant
    Filed: October 5, 2015
    Date of Patent: October 22, 2019
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Jang Jo, Jongsung Kim, Hyunggeun Kwon
  • Patent number: 10453759
    Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: October 22, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Katsuji Iguchi
  • Patent number: 10444445
    Abstract: An integrated silicon-based photo-detection system, fabricated in an integrated silicon based structure on a silicon-on-insulator (SOI) wafer, includes a photodiode fabricated on an isolated area surrounded by a light barrier, where the light barrier is an area where the SOI wafer is removed, an optical waveguide that guides an input signal light into the photodiode, and external electrical traces that the free electron carriers flow into as photocurrent. A method of fabricating an integrated silicon-based photo-detection system in an integrated silicon based structure on a silicon-on-insulator (SOI) wafer, includes performing deep etching to create a light barrier surrounding an isolated area on the SOI wafer, fabricating a photodiode in the isolated area surrounded by the light barrier, fabricating an optical waveguide that guides an input signal light into the photodiode, and wirebonding external electrical traces to connect to the remainder of the integrated silicon based structure.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: October 15, 2019
    Assignee: Ciena Corporation
    Inventor: Francois Pelletier
  • Patent number: 10446708
    Abstract: An optocoupler device for receiving a load voltage larger than or equal to 5 KV includes a carrier, a supporting frame connected to the carrier, a light emitter and a light receiver spacedly mounted on the carrier, an electrical isolator at least partially disposed on the supporting frame, a translucent encapsulate, and an opaque encapsulate. The electrical isolator is translucent and has a dielectric strength larger than or equal to 50 KV/mm. A shortest light transmitting path between the light emitter and the light receiver passes through the electrical isolator. The supporting frame, the light emitter, the light receiver, and at least part of the electrical isolator are embedded in the translucent encapsulate, and the translucent encapsulate is embedded in the opaque encapsulate.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: October 15, 2019
    Assignee: ANPEC ELECTRONICS CORPORATION
    Inventors: Chien-Chung Hsiao, Chih-Cheng Chien
  • Patent number: 10439117
    Abstract: An optical device includes a substrate, a conductive layer formed over the substrate, an insulating layer formed over the conductive layer, a first optical element disposed over the conductive layer, and a sealing resin part configured to cover the first optical element. The conductive layer includes a first conductive section, a second conductive section spaced apart from the first conductive section, and a first conductive portion extending in a first direction from the first conductive section. The first conductive portion is spaced apart from the second conductive section in a second direction intersecting with the first direction, and the insulating layer includes a first insulating part formed over the first conductive portion, and the first insulating part includes a portion overlapping with the second conductive section in the first direction.
    Type: Grant
    Filed: June 7, 2018
    Date of Patent: October 8, 2019
    Assignee: Rohm Co., Ltd.
    Inventor: Riki Shimabukuro
  • Patent number: 10436990
    Abstract: Methods and systems for two-dimensional mode-matching grating couplers may include in a photonic chip comprising a grating coupler at a surface of the photonic chip, the grating coupler having increased scattering strength in a direction of a light wave traveling through the grating coupler: receiving an optical signal from a first direction within the photonic chip; and scattering the optical signal out of the surface of the photonic chip. A second optical signal may be received in the grating coupler from a second direction within the photonic chip. The second optical signal may be scattered out of the surface of the photonic chip. The increasing scattering strength may be configured by increased width scatterers along a direction perpendicular to the direction of light travel. The increased scattering strength may be configured by a transition of shapes of scatterers in the grating coupler.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: October 8, 2019
    Assignee: Luxtera, Inc.
    Inventors: Roman Bruck, Attila Mekis
  • Patent number: 10432832
    Abstract: An alignment member for alignment of a sensor board relative an optics unit where the alignment member is arranged to couple the sensor board to the optics unit. The alignment member comprises: a section formed by a thermoplastic material and arranged to support the sensor board; and a heating element which upon activation is arranged to transfer heat to the section such that the section at least partly is heated to a temperature being at least the glass transition temperature for the thermoplastic material for enabling alignment of the sensor board relative the optics unit. A camera arrangement comprises a sensor board, an optics unit, and an alignment member. A method for aligning a sensor board relative an optics unit.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: October 1, 2019
    Assignee: Axis AB
    Inventors: Stig Frohlund, Andreas Karlsson J├Ągerman
  • Patent number: 10400958
    Abstract: A light-emitting device package includes a metalized substrate, a light-emitting diode (LED) die, and a single primary optic. The metalized substrate includes a top surface, pads on the top surface, and traces extending from the pads. The LED die is mounted on the pads of the metalized substrate. The LED die includes individually addressable segments. Each segment includes one or more junctions. The primary optic is located over the LED die.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: September 3, 2019
    Assignee: LUMILEDS LLC
    Inventor: Kenneth John Vampola
  • Patent number: 10381524
    Abstract: To provide a semiconductor light emitting element of which color irregularity is improved, the semiconductor light emitting element according to the present invention comprises: a support substrate; a semiconductor laminated structural body provided on the support substrate, the semiconductor laminated structural body having a first semiconductor layer, a luminescent layer, and a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a light shielding member covering a portion of an upper surface and side surfaces of the semiconductor laminated structural body, the light shielding member electrically separated from both of the first electrode and the second electrode; and a wavelength conversion member covering an upper surface not covered by the light shielding member of the semiconductor laminated structural body.
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: August 13, 2019
    Assignee: NICHIA CORPORATION
    Inventor: Hiroaki Matsumura
  • Patent number: 10355146
    Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, such as proximity sensing or optical ranging devices. One embodiment is directed to an optical sensor package that includes a substrate, a sensor die coupled to the substrate, a light-emitting device coupled to the substrate, and a cap. The cap is positioned around side surfaces of the sensor die and covers at least a portion of the substrate. The cap includes first and second sidewalls, an inner wall having first and second side surfaces and a mounting surface, and a cover in contact with the first and second sidewalls and the inner wall. The first and second side surfaces are transverse to the mounting surface, and the inner wall includes an opening extending into the inner wall from the mounting surface. A first adhesive material is provided on the sensor die and at least partially within the opening, and secures the inner wall to the sensor die.
    Type: Grant
    Filed: July 5, 2018
    Date of Patent: July 16, 2019
    Assignee: STMICROELECTRONICS PTE LTD
    Inventors: Jing-En Luan, Laurent Herard, Yong Jiang Lei
  • Patent number: 10340660
    Abstract: A tunable laser configured in a small package subassembly including a gain chip positioned in the interior space between first and second tunable filter subassemblies. The tunable laser is packaged in either a rectangular or cylindrical housing, with an electrical input interface positioned at one end of the housing.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: July 2, 2019
    Assignee: NeoPhotonics Corporation
    Inventor: Andrew John Daiber
  • Patent number: 10333094
    Abstract: Optoelectronic device comprising an organic active layer provided for generating electromagnetic radiation, and first and second electrodes contacting the active layer. The second electrode has a second electrode layer. The first electrode comprises a first electrode layer and a first connection layer spaced at least in places from the first electrode layer, with the active layer being arranged at least in places therebetween, and through vias extend through the active layer and form an electrical contact between the first electrode layer and the first connection layer. The through vias form a contiguous through via structure that subdivides the second electrode layer into a plurality of sub-regions which are spaced from one another and wherein the contiguous through via structure subdivides the active layer into a plurality of regions which are separate from one another. In operation, the through vias are electrically conductively connected to one another directly.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: June 25, 2019
    Assignee: OSRAM OLED GmbH
    Inventor: Thomas Wehlus
  • Patent number: 10310174
    Abstract: According to one embodiment, a light source device includes a light-emitting chip, and a case in which the light-emitting chip is accommodated. The case includes a light-emitting surface which transmits light from the light-emitting chip, and a plurality of sidewalls extending so as to intersect the light-emitting surface. At least a part of the sidewalls is colored or painted in black.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: June 4, 2019
    Assignee: Japan Display Inc.
    Inventor: Ken Sugiyama
  • Patent number: 10312661
    Abstract: A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: June 4, 2019
    Assignee: Skorpios Technologies, Inc.
    Inventor: Damien Lambert
  • Patent number: 10256386
    Abstract: A light emitting device includes a substrate, a plurality of first wiring members, a plurality of second wiring members and a plurality of light emitting elements. The first wiring members extend in a first direction. The second wiring members extend in a second direction. Each of the second wiring members is segmented into a plurality of second wiring portions. The light emitting elements are disposed along the second direction. A first electrode of the light emitting element is connected to a corresponding one of the first wiring members. A second electrode of the light emitting element has a first connection part and a second connection part that is linked to the first connection part. The first connection part and the second connection part are connected to a corresponding one of the second wiring members and bridge at least two of the segmented second wiring portions in the second direction.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: April 9, 2019
    Assignee: NICHIA CORPORATION
    Inventor: Takuya Nakabayashi
  • Patent number: 10181550
    Abstract: A lateral light emitting diode device includes: a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a MESA region formed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer; a transparent window layer disposed on the n-type GaN layer in the entire or part of the MESA region; a plurality of contact plugs which is in contact with the n-type GaN layer through the transparent window layer; and an n-electrode disposed on the transparent window layer to connect the plurality of contact plugs to each other.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: January 15, 2019
    Assignee: Korea University Research and Business Foundation
    Inventors: Tae Yeon Seong, Ki Seok Kim, Hwan Kyo Kim, Dae-Hyun Kim