Abstract: Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

Abstract: The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a substrate, a thin film transistor located on the substrate, a light emitting device located on the substrate and spaced apart from the thin film transistor in a direction parallel to a surface of the substrate, and a light shielding portion located between the thin film transistor and the light emitting device for shielding a light from the light emitting device. The light shielding portion surrounds the light emitting layer.

Abstract: A gas sensor includes a light receiving element, a light emitting element, an integrated circuit, a lead frame, and a sealing member configured to seal these into a package. The lead frame includes at least one die pad portion and a plurality of terminal portions, the die pad portion includes a first region having a first thickness and a second region having a second thickness thinner than the first thickness, the integrated circuit is arranged on the second region of the die pad portion, the light emitting element is electrically connected to at least one of the plurality of terminal portions, the light receiving element is electrically connected to the integrated circuit and is arranged on the opposite side to the light emitting element with the integrated circuit interposed therebetween, and the integrated circuit is electrically connected to at least one of the plurality of terminal portions.

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

Abstract: An optical coupling device includes a light receiving element provided with a first output terminal and a second output terminal, a light emitting element provided on the light receiving element, a first switching element, a first electrode plate, and a sealing member. The first switching element is provided side by side on the light receiving element. A first main terminal and a control terminal are provided on an upper surface of the first switching element. A second main terminal is provided on a lower surface of the first switching element. The first main terminal is connected to the first output terminal. The control terminal is connected to the second output terminal. An upper surface of the first electrode plate is connected to the second main terminal. The sealing member covers the light receiving element, the light emitting element, and the first switching element.

Abstract: According to at least one aspect, a lighting device is provided. The lighting device comprises a circuit board, a light emitting diode (LED) mounted to the circuit board and configured to emit light, a lens disposed over the LED having a bottom surface facing the circuit board, a top surface opposite the bottom surface, and a lateral surface between the top and bottom surfaces, and an elastomer encapsulating at least part of the circuit board. The elastomer may not be in contact with at least part of the lateral surface of the lens so as to form a gap between the elastomer and the lateral surface of the lens.

Abstract: An optoelectronic device comprises a phosphor plate, an optoelectronic chip comprising a layer stack of a first optoelectronic semiconductor layer and a second optoelectronic semiconductor layer, a first electrode, and a second electrode. The optoelectronic chip is attached to the phosphor plate, so that the second optoelectronic semiconductor layer is arranged between the phosphor plate and the first optoelectronic semiconductor layer. The first electrode and the second electrode are arranged on a first main surface of the first optoelectronic semiconductor layer on a side remote from the phosphor plate. The second electrode directly contacts the first optoelectronic semiconductor layer.

Abstract: A method of manufacturing a display device comprises: forming a thin film transistor array on a substrate, wherein the substrate has a via which enable two opposite sides of the substrate to be communicated with each other; and filling the via with a conductive filler after the thin film transistor array is formed, so that the conductive filler is electrically connected with the thin film transistor array.

Abstract: To enable manufacturing of a display device with a low defect rate and high yield, an integrated circuit chip includes a drive circuit that drives a light emitting unit, and the drive circuit includes a P-side electrode connected to an anode of the light emitting unit and a nonvolatile memory transistor that controls current supply to the P-side electrode.

Abstract: A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.

Abstract: According to an embodiment, a light source-solar cell complex comprises a plurality of layers receiving light to generate current or receiving power to emit a preset wavelength band of light and a plurality of connectors grown between the layers and transferring the current generated from the layers to an outside or transferring power from the outside to each layer.

Abstract: An electronic component includes a first contact point for n-side contacting, a second contact point for p-side contacting, and a protective diode, which is connected antiparallel to the first contact point and to the second contact point. The protective diode includes a first diode structure which is p-conductive and a second diode structure which is n-conductive. The first diode structure is formed as a layer which overlaps in places with the first contact point in a first overlap region. The second diode structure is formed as a layer which overlaps in places with the second contact point in a second overlap region. The first diode structure and the second diode structure overlap each other in a third overlap region.

Abstract: Provided is a printed circuit board using thermally and electrically conductive layer, and a manufacturing method thereof. The manufacturing method for mounting a plurality of elements includes forming an electrode layer on a substrate of a PCB, forming a photo solder resist (PSR) layer in a patterned manner on a first area of the electrode layer; forming a conductive layer on the PSR layer in the patterned manner, the conductive layer being configured to conduct heat and static electricity; and mounting a plurality of elements on a second area of the side of the PCB, the second area being different from the first area.

Abstract: Optics systems presented are arranged as high-performance imagers particularly characterized by their exceptional compactness in view of image quality. A plurality of lens and let's and or doublets are configured to cooperate with related mount systems optimized for compactness. To achieve very high resolution imaging despite somewhat abbreviated compound lens design, these systems include use of lens array elements proximate to an imaging plane. So placed lens array devices may be designed with lens elements which invariably operate on incident wave planes with radial dependence. That is, the focusing strength of lenses from which these lens arrays are comprised may depend upon its distance from system optic axis. This enables an imaging correction function that counters distortion and other undesirable imaging errors typically present in a simplified compound lens systems.

Abstract: A display unit is provided, on a substrate, with a first wiring layer and a device section. The device section has a plurality of pixels. The device section includes, in each of the pixels, a light-emitting device section and a drive device. The light-emitting device section includes a light-emitting device and a light-emitting surface. The drive device drives the light-emitting device section and is electrically coupled to the light-emitting device section through the first wiring layer. An end of the light-emitting surface of the light-emitting device section is disposed at a position as high as an upper end of the drive device, or at a position higher than the upper end.

Abstract: Various embodiments of a laser driver are described herein. In an embodiment, a laser driver system includes: an external set of inductors including a first external inductor and a second external inductor; an internal set of inductors including a first internal inductor and a second internal inductor; and a DC-to-DC convertor configured to bias a first output path defined by the first external inductor and the first internal inductor and a second output path defined by the second external inductor and the second internal inductor.

Abstract: Light scattering particles made of TiO2, BaSO4, SiO2, or Al2O3 have been used in a QD layer of a QD-LED for enhancing luminous intensity. However, the light scatters are found to decline the light conversion efficiency of the QD layer. In view of that, the present invention particularly discloses a light conversion material with high conversion efficiency for use in the QD-LED. The light conversion material mainly comprises a polymer matrix, a plurality of 3D photonic crystals dispersed in the polymer matrix, and a plurality of quantum dots dispersed in the polymer matrix, wherein each of the plurality of 3D photonic crystals is formed by applying a self-assembly process to a plurality of polymer beads. Moreover, a variety of experimental data have proved that, this light conversion material indeed exhibits outstanding photoluminescence intensity and light conversion efficiency both superior than that of the conventionally-used QD layer.

Abstract: A semiconductor package device comprises a substrate, a light emitter, a light detector and a transparent conductive film. The substrate as a first surface and a second surface opposite to the first surface. The light emitter is disposed on the first surface of the substrate and has a light emission area adjacent to the first surface of the substrate. The light detector is disposed on the first surface of the substrate and has a light receiving area adjacent to the first surface of the substrate. The transparent conducting film is disposed on the second surface of the substrate.

Abstract: To enable manufacturing of a display device with a low defect rate and high yield, an integrated circuit chip includes a drive circuit that drives a light emitting unit, and the drive circuit includes a P-side electrode connected to an anode of the light emitting unit and a nonvolatile memory transistor that controls current supply to the P-side electrode.

Abstract: A multi-wavelength integrated device (5) including plural semiconductor lasers (6) and plural modulators (7) modulating output beams of the plural semiconductor lasers (6) respectively is mounted on the stem (1). Plural leads (10) penetrates through the stem (1) and are connected to the plural semiconductor lasers (6) and the plural modulators (7) respectively. Each lead (10) is a coaxial line in which plural layers are concentrically overlapped with one another. The coaxial line includes a high frequency signal line (12) transmitting a high frequency signal to the modulator (7), a GND line (14), and a feed line (16) feeding a DC current to the semiconductor laser (6). The high frequency signal line (12) is arranged at a center of the coaxial line. The GND line (14) and the feed line (16) are arranged outside the high frequency signal line (12).

Abstract: Techniques and circuitry for a semiconductor laser with enhanced lasing wavelengths stabilization are described. A semiconductor laser can generate an optical signal (e.g., single or multi-wavelength), for use in a Dense Wavelength Division Multiplexing (DWDM) interconnect system. The stabilization circuitry can include temperature sensor circuitry that measures an operational temperature of the semiconductor laser, and a feedback controller that can determine a temperature-induced wavelength shift that may be experienced by the multi-wavelength optical signal based on the laser's temperature. The feedback controller is also configured to generate a compensation signal that is determined to cause a complimentary shift in the multi-wavelength optical signal, where the complimentary shift can compensate for the temperature-induced wavelength shift.

Abstract: A light-emitting device package includes a metalized substrate, a light-emitting diode (LED) die, and a single primary optic. The metalized substrate includes a top surface, pads on the top surface, and traces extending from the pads. The LED die is mounted on the pads of the metalized substrate. The LED die includes individually addressable segments. Each segment includes one or more junctions. The primary optic is located over the LED die.

Abstract: A semiconductor light-emitting element includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The second electrode includes an ohmic electrode contacting the second semiconductor layer, and a semiconductor electrode made of a semiconductor layer contacting the ohmic electrode.

Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.

Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.

Abstract: An OLED component is disclosed, which relates to the technical field of display panel. The OLED component comprises a TFT substrate, a coating zone, a sealant, a cover and a photo spacer. The coating zone is located at a center of the TFT substrate; the sealant is arranged around the coating zone; the cover is arranged above the coating zone and the sealant; and the photo spacer is arranged on an upper surface of the coating zone for supporting the cover. Since the photo spacer is arranged on the upper surface of the coating zone, an alignment accuracy can be improved, and the OLED component can be easily manufactured. Meanwhile, a cell thickness uniformity of a large-sized panel can be maintained, and occurrence of Newton rings can be avoided.

Abstract: Methods and systems for two-dimensional mode-matching grating couplers may include in a photonic chip comprising a grating coupler at a surface of the photonic chip, where the grating coupler has increased scattering strength in a direction of a light wave traveling through the grating coupler: receiving an optical signal from a first direction within the photonic chip; and scattering the optical signal out of the surface of the photonic chip. A second optical signal may be received in the grating coupler from a second direction within the photonic chip. The second optical signal may be scattered out of the surface of the photonic chip. The increasing scattering strength may be caused by increased width scatterers along a direction perpendicular to the direction of light travel. The increased scattering strength may be caused by a transition of shapes of scatterers in the grating coupler.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: A light module includes a module main body and a flexible substrate. The module main body has a stem, and a high frequency lead and a DC lead. The flexible substrate has a stem contact portion in contact with the lower surface of the stem. A high frequency through-hole and a DC through-hole are formed in the stem contact portion in which the high frequency lead and the DC lead are respectively inserted. The flexible substrate includes plural surface wirings, a ground wiring provided in a first region which contains the high frequency through-hole, but does not contain the DC through-hole on the back surface of the stem contact portion, and an adhesive layer provided in a second region which is a region excluding the first region on the back surface of the stem contact portion.

Abstract: A bidirectional optical subassembly, an optical transceiver including the same, and methods of making and using the same are disclosed. The optical subassembly includes a photodiode configured to receive an incoming optical signal, a transmitter configured to transmit an outgoing optical signal, and a passive optical signal processing unit including a filter and a mirror. The filter is at a first predetermined angle relative to an optical path of the outgoing optical signal and is configured to (i) reflect one of the outgoing optical signal and the incoming optical signal and (ii) allow the other of the outgoing optical signal and the incoming optical signal to pass through. The mirror is configured to reflect the one of the outgoing optical signal and the incoming optical signal at a second predetermined angle. The first predetermined angle is adapted to reduce filter insertion losses.

Abstract: Disclosed herein is a multi-element flexible strap light which includes a plurality of light elements disposed on a flexible chassis. The flexible chassis may include a first flexible layer, a printed circuit board, and a second flexible layer. The flexible chassis may be further contained within a third flexible layer, such as a layer of polycarbonate plastic. Further disclosed is a multi-element flexible strap light system which includes a plurality of light elements disposed on a flexible chassis and a remote battery.

Abstract: A relay device and a pressure detection device are provided that are configured to eliminate the necessity of calibrating an output value from a pressure sensor in the pressure detection device even when a mold is replaced. A relay device for a pressure detection device provided with a pressure sensor (S1 to Sn) configured to detect an inner pressure in a cavity (CT) of a mold of an injection molding machine is provided. The relay device is integrally fixed to the mold. The relay device includes a storage configured to store specific information of the pressure sensor (S1 to Sn) provided to the mold to detect the inner pressure of the cavity (CT), the cavity (CT) being defined between a fixed-side mold and a movable-side mold of the mold.

Abstract: A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlxGa1-xN (0.1?x?1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Abstract: A light-emitting device includes an n-semiconductor structure, a p-semiconductor structure and a light-emitting active-region sandwiched therebetween. An n-trough is formed to expose the n-semiconductor structure by removing a first portion of the p-semiconductor structure and the light-emitting active-region. The n-trough surrounds a p-mesa which contains a second portion of the n-semiconductor structure, the p-semiconductor structure and the light-emitting active-region. The n-trough and the p-mesa are path-connected spaces and are formed via lithography and etching using a lithographic mask which is topologically constructed via merging a unit cell's at least two transformations selected from the unit cell's translation, rotation, and reflection transformations.

Abstract: In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Abstract: To suppress peeling-off or cracks of a solder-fixing portion, which are caused by vibration during transportation or operation, in an optical modulator with FPC, thereby suppressing deterioration of radio-frequency characteristics of a signal path in an effective manner at low cost. An optical modulator 100 includes a flexible printed circuit (106) that performs electrical connection with a circuit substrate. The flexible printed circuit has a substantially quadrilateral shape. In the flexible printed circuit, a pad (210 and the like), which is electrically connected to the circuit substrate, is provided along one side of the substantial quadrilateral. In addition, in the flexible printed circuit, signal patterns (220 and the like), which are connected to signal lead pins (120 and the like) for signal transmission which is provided in the optical modulator, are provided in another side opposite to the one side.

Abstract: Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.

Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer i

Abstract: The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

Abstract: A light emitting device includes one or more light emitting elements, a light transmissive member, and a light reflective member. The one or more light emitting elements each includes an upper surface. The light transmissive member has an upper surface and a lower surface. The light reflective member covers surfaces of the light transmissive member and lateral surfaces of the one or more light emitting elements so as to expose the upper surface of the light transmissive member. The upper surface area of the light transmissive member is smaller than a sum of the upper surface areas of the one or more light emitting elements, and the lower surface area of the light transmissive member is larger than a sum of the upper surface areas of the one or more light emitting elements.

Abstract: Airtightness in a cavity of an inertial sensor (acceleration sensor) is increased to achieve high sensitivity. In the acceleration sensor having movable electrodes VE1, VE2 and fixed electrodes FE1, FE2, the fixed electrodes are formed by portions surrounded by a through hole TH1 provided in a cap layer CL, and the through hole is filled with an insulating film IF1 and polysilicon P and has a wide portion (WP). The wide portion has a gap SP that is not filled with the insulating film IF1 and the polysilicon P, and the gap SP is filled with the interlayer insulating film ID. With such a configuration, degassing can be exhausted through the gap (airway) SP in a pressure reducing step.

Abstract: An optical module is provided for covering and being assembled on a light source module and providing light distribution and insulation protection for the light source module. The optical module includes a body comprising an optical portion and a power supply drive accommodating portion. The optical module also includes a mounting portion formed to integrally extend from the body. The optical portion is provided with a plurality of lens units that are formed to integrally project along a first direction from a surface of the body. The power supply drive accommodating portion is provided with an accommodating space formed to integrally extend along the first direction from the surface of the body so as to accommodate the power supply drive. The mounting portion at least partially accommodates a magnetic mounting element that includes a nonmagnetic base and a strong magnet which is connected integrally with the nonmagnetic base.

Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.

Abstract: This disclosure relates to an organic electroluminescent display device and a method of sealing the same capable of reducing a manufacturing time and a complexity of manufacturing process. The organic electroluminescent display device comprises a first substrate including an active area and a bezel area outside the active area, the first substrate including an organic light emitting layer and a passivation film covering the organic light emitting layer thereon; a second substrate facing to the first substrate; and a filling layer in a space between the first substrate and the second substrate, wherein the filling layer includes; a first region having a first hardness, and spaced apart at a predetermined distance from the a passivation film to surround the protective layer in the bezel area; and a second region having a second hardness lower than the first hardness, and positioned inside the first region to be contacted with the first region.

Abstract: Light emitting diode (LED) devices and systems include a superstrate (e.g., a light-transmissive layer), LEDs attached to the superstrate at a die-attach layer formed thereon, and an encapsulant layer formed over and/or around the LEDs with a non-reflective or clear material. A method for producing LED devices and systems includes providing a superstrate with a die-attach layer formed thereon, attaching LEDs to the superstrate at the die-attach layer, forming conductive surfaces on a side of the LED opposite the die-attach layer, dispensing an encapsulant layer to at least partially encapsulate the LEDs, and forming one or more metal traces to electrically interconnect the conductive surfaces of at least some of the LEDs with each other.

Abstract: An optocoupler device for receiving a load voltage larger than or equal to 5 KV includes a carrier, a supporting frame connected to the carrier, a light emitter and a light receiver spacedly mounted on the carrier, an electrical isolator at least partially disposed on the supporting frame, a translucent encapsulate, and an opaque encapsulate. The electrical isolator is translucent and has a dielectric strength larger than or equal to 50 KV/mm. A shortest light transmitting path between the light emitter and the light receiver passes through the electrical isolator. The supporting frame, the light emitter, the light receiver, and at least part of the electrical isolator are embedded in the translucent encapsulate, and the translucent encapsulate is embedded in the opaque encapsulate.

Abstract: An integrated silicon-based photo-detection system, fabricated in an integrated silicon based structure on a silicon-on-insulator (SOI) wafer, includes a photodiode fabricated on an isolated area surrounded by a light barrier, where the light barrier is an area where the SOI wafer is removed, an optical waveguide that guides an input signal light into the photodiode, and external electrical traces that the free electron carriers flow into as photocurrent. A method of fabricating an integrated silicon-based photo-detection system in an integrated silicon based structure on a silicon-on-insulator (SOI) wafer, includes performing deep etching to create a light barrier surrounding an isolated area on the SOI wafer, fabricating a photodiode in the isolated area surrounded by the light barrier, fabricating an optical waveguide that guides an input signal light into the photodiode, and wirebonding external electrical traces to connect to the remainder of the integrated silicon based structure.

Abstract: Methods and systems for two-dimensional mode-matching grating couplers may include in a photonic chip comprising a grating coupler at a surface of the photonic chip, the grating coupler having increased scattering strength in a direction of a light wave traveling through the grating coupler: receiving an optical signal from a first direction within the photonic chip; and scattering the optical signal out of the surface of the photonic chip. A second optical signal may be received in the grating coupler from a second direction within the photonic chip. The second optical signal may be scattered out of the surface of the photonic chip. The increasing scattering strength may be configured by increased width scatterers along a direction perpendicular to the direction of light travel. The increased scattering strength may be configured by a transition of shapes of scatterers in the grating coupler.

Abstract: An optical device includes a substrate, a conductive layer formed over the substrate, an insulating layer formed over the conductive layer, a first optical element disposed over the conductive layer, and a sealing resin part configured to cover the first optical element. The conductive layer includes a first conductive section, a second conductive section spaced apart from the first conductive section, and a first conductive portion extending in a first direction from the first conductive section. The first conductive portion is spaced apart from the second conductive section in a second direction intersecting with the first direction, and the insulating layer includes a first insulating part formed over the first conductive portion, and the first insulating part includes a portion overlapping with the second conductive section in the first direction.