Abstract: An optoelectronic module, including a substrate, a covering member, a light emitting element, and a light receiving element, is provided. The covering member is disposed on the substrate and includes an upper cover portion, a peripheral sidewall portion connected to the upper cover portion, and an inside partition delimiting a first cavity and a second cavity. The first cavity is separated from the second cavity. The light emitting element is disposed on the substrate as corresponding to the first cavity. The light receiving element is disposed on the substrate as corresponding to the second cavity. The inside partition has a first inner wall surface located in the first cavity and a second inner wall surface located in the second cavity. A first protruded-recessed structure is formed on the first inner wall surface.

Abstract: Photonic packages and device assemblies that include photonic integrated circuits (PICs) coupled to optical lenses on lateral sides of the PICs. An example photonic package comprises a package support, an integrated circuit (IC), an insulating material, a PIC having an active side and a lateral side substantially perpendicular to the active side. At least one optical structure is on the active side. A substantial portion of the active side is in contact with the insulating material, and the PIC is electrically coupled to the package support and to the IC. The photonic package further includes an optical lens coupled to the PIC on the lateral side. In some embodiments, the photonic package further includes an interposer between the PIC or the IC and the package support.

Abstract: In an embodiment, an optoelectronic device includes a carrier, at least one optoelectronic semiconductor component arranged on an upper side of the carrier and at least one light channel associated with the optoelectronic semiconductor component which extends between a first end of the light channel which is distant from a light-active surface of the semiconductor component and which includes an opening into the outer space and a second end of the light channel including an opening directed towards the light-active surface of the semiconductor component, wherein the at least one light channel extends between its respective first and second ends in a non-rectilinear manner, wherein the light channel includes a cavity extending between the two ends, wherein an inner wall surrounds the cavity, and wherein at least a section of the inner wall is reflective.

Abstract: A display device including a substrate and a plurality of pixels in a display region of the substrate. Each of the pixels includes first and second sub-pixels, and each of the first and second sub-pixels has a light emitting region for emitting light. The first sub-pixel includes a first light emitting element in the light emitting region and configured to emit visible light. The second sub-pixel includes a second light emitting element in the light emitting region and configured to emit infrared light and a light receiving element configured to receive the infrared light emitted from the second light emitting element to detect a user's touch. The second light emitting element and the light receiving element in the second sub-pixel are electrically insulated from and optically coupled to each other to form a photo-coupler.

Abstract: A stem for a semiconductor package includes an eyelet having a through hole formed therethrough, a lead extending through the through hole, and a sealing part configured to seal the through hole around the lead, wherein a main material of the eyelet is 45% Ni—Fe, and wherein a thermal expansion coefficient of the eyelet is greater than a thermal expansion coefficient of the sealing part.

Abstract: A lighting device includes a substrate, a first conductive portion, a second conductive portion disposed with a spacing as to the first conductive portion, a first reflective layer having a first opening coinciding with the first conductive portion and a second opening coinciding with the second conductive portion, a light-emitting part connected to the first conductive portion through the first opening, a non-light-emitting part connected to the second conductive portion through the second opening, and a second reflective layer. The second reflective layer includes a first reflective portion disposed around the light-emitting part, and a second reflective portion disposed around the non-light-emitting part.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) array package includes a VCSEL array chip bonded on a substrate, a support structure surrounding the VCSEL array chip, and an optical component mounted on the support structure. The support structure is molded directly on the substrate using a high thermal conductivity molding material. The support structure covers all side surfaces of the VCSEL array chip to facilitate heat transfer through the chip's sides. A transparent layer is deposited on the output surface of the VCSEL array chip, which prevents the support structure from blocking an output beam during molding.

Abstract: A display module and system applications including a display module are described. The display module may include a display substrate including a front surface, a back surface, and a display area on the front surface. A plurality of interconnects extend through the display substrate from the front surface to the back surface. An array of light emitting diodes (LEDs) are in the display area and electrically connected with the plurality of interconnects, and one or more driver circuits are on the back surface of the display substrate. Exemplary system applications include wearable, rollable, and foldable displays.

Abstract: In one embodiment, the semiconductor laser comprises a housing in which multiple laser diode chips are encapsulated. The housing comprises a cover panel and/or a lateral wall which is permeable to the generated laser radiation. The cover panel and/or the lateral wall has a light outlet surface with adjacent outlet regions. Each of the outlet regions is paired with precisely one of the laser diode chips. The light outlet surface is arranged downstream of a light outlet plane. The cover panel and/or the lateral wall has a different average thickness in the outlet regions such that the optical wavelength for the laser radiation of all of the laser diode chips is the same up to the light outlet plane with a tolerance of maximally 1.5 ?m.

Abstract: A detection device includes a substrate, a plurality of photodiodes that are provided on the substrate, and include organic semiconductors, a plurality of transistors that are provided correspondingly to the respective photodiodes, and each include a semiconductor layer, a gate electrode, and a source electrode, a plurality of lower electrodes that are provided between the transistors and the photodiodes in a direction orthogonal to the substrate, and are provided correspondingly to the respective photodiodes, an upper electrode provided across the photodiodes, a first auxiliary capacitor electrode provided between the substrate and each of the photodiodes in the direction orthogonal to the substrate, and a second auxiliary capacitor electrode that is provided in the same layer as that of the semiconductor layer or the source electrode, and faces the first auxiliary capacitor electrode with an insulating film interposed between the first auxiliary capacitor electrode and the second auxiliary capacitor electro

Abstract: Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.

Abstract: Apparatus include a first laser diode situated to emit a beam from an exit facet along an optical axis, the beam as emitted having perpendicular fast and slow axes perpendicular to the optical axis, a first fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the first laser diode, a second laser diode situated to emit a beam from an exit facet of the second laser diode along an optical axis parallel to the optical axis of the first laser diode and with a slow axis in a common plane with the slow axis of the first laser diode, and a second fast axis collimator (FAC) optically coupled to the beam as emitted from the exit facet of the second laser diode and configured to direct the beam along a redirected beam axis having a non-zero angle with respect to the optical axis of the second laser diode.

Abstract: A light-emitting device includes: a base including: a mount surface, and a lateral wall located around the mount surface, the lateral wall including: a pair of first protrusions located opposite to each other in a first direction which is parallel to a side of the mount surface, and a pair of second protrusions located opposite to each other in a second direction which is perpendicular to the first direction, the second protrusions being provided lower than the first protrusions; one or more light-emitting elements mounted on the mount surface of the base; a first light-transmissive member sealing a space in which the one or more light-emitting elements are mounted; and one or more wires connecting to the one or more light-emitting elements, the one or more wires being bonded on conduction regions provided on at least one of upper surfaces of the second protrusions.

Abstract: A high-voltage switch, whose operation leverages the speed of electrons to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, the high-voltage switch includes a first electrode, a second electrode spaced apart from the first electrode, a region of non-absorbing material occupying a portion of the space between the first and second electrodes and allowing a laser pulse to propagate therethrough without substantial absorption, and a region of absorbing material occupying another portion of the space and producing a charged particle cloud upon receiving the laser pulse. The high-voltage switch remains “on” upon the charged particle cloud reaching an electrode and until it has been collected by the electrode, and where the high-voltage switch remains “off” subsequent to the collection and until another generated charged particle cloud reaches the electrode.

Abstract: Disclosed herein is a micro light emitting diode (microLED) display structure with emission from the back side of a transparent substrate, which can be manufactured by fluidic assembly. The architecture allows microLED displays or display tiles to be fabricated simply, with processing and interconnection only on one side of the backplane. The structure may incorporate reflectors in the fluidic assembly structures to direct substantially all of the emitted light toward the viewer. Also disclosed are microLEDs and emission backplanes designed to support a back emission display.

Abstract: A display apparatus and driving method therefor. The apparatus comprises light emitting element, pixel circuit, scan signal line, data signal line, initial signal line, light emission control line, first power source line, and first reset line to third reset line. The pixel circuit comprises: first reset sub-circuit configured to provide a signal of the initial signal line to a first node; node control sub-circuit configured to provide a signal of the data signal line to a second node, compensate for the first node until a voltage thereof satisfies a threshold condition, provide a signal of the second node to the third node; light emission control sub-circuit configured to provide a signal of the first power source line to the second node and a signal of the third node to light emitting element; second reset sub-circuit configured to provide a signal of the initial signal line to light emitting element.

Abstract: A light emitting package including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a plurality of connection electrodes electrically connected to at least one of the first, second, and third LED sub-units, the connection electrodes having side surfaces and covering a side surface of at least one of the first, second, and third LED sub-units, a first passivation layer surrounding at least the side surfaces of the connection electrodes, an insulating layer having first and second opposed surfaces, with the first surface facing the LED sub-units, and a first electrode disposed on the first surface of the insulating layer and connected to at least one of the connection electrodes.

Abstract: A light emitting chip including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a first bonding layer interposed between the first and second LED sub-units, a second bonding layer interposed between second and third LED sub-units, and a first connection electrode electrically connected to and overlapping at least one of the first, second, and third LED sub-units, the first connection electrode having first and second opposing side surfaces, the first side surface having a first length and the second side surface having a second length, in which the difference in length between the first side surface and the second side surface of the first connection electrode is greater than a thickness of at least one of the LED sub-units.

Abstract: In an embodiment an optoelectronic sensor includes a radiation-emitting semiconductor region, a radiation-detecting semiconductor region, a first polarization filter arranged above the radiation-emitting semiconductor region and including a first polarization direction and a second polarization filter arranged above the radiation-detecting semiconductor region and including a second polarization direction, wherein the first polarization direction and the second polarization direction are perpendicular to each other, wherein a radiation-reflecting or radiation-absorbing layer is arranged on side flanks of the radiation-emitting semiconductor region and/or the radiation-detecting semiconductor region and/or the first polarization filter and/or the second polarization filter.

Abstract: Disclosed are a pixel circuit and a driving method thereof, a display substrate and a driving method thereof, and a display apparatus. The pixel circuit includes a pixel sub-circuit, which includes: a driving circuit, including a control terminal, a first terminal and a second terminal; a voltage transmitting circuit, configured, in response to a transmission control signal, to apply a reset voltage and/or a first power voltage to the first terminal, respectively; and a data writing circuit, configured, in response to a scan signal, to write a data signal into the control terminal and store the data signal. The driving circuit is configured to control a voltage of the second terminal according to the data signal of the control terminal and the voltage of the first terminal, and to generate a driving current for driving a light-emitting element to emit light based on the voltage of the second terminal.

Abstract: Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

Abstract: A light emitting package includes a first LED sub-unit having first and second opposed surfaces, a second LED sub-unit disposed on the second surface of the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a plurality of connection electrodes having side surfaces and electrically connected to at least one of the LED sub-units, the connection electrodes covering a side surface of at least one of the LED sub-units, a first passivation layer surrounding at least the sides surfaces of the connection electrodes, the first passivation layer exposing at least a portion of the first surface of the first LED sub-unit, a substrate having first and second opposed surfaces, with the first surface of the substrate facing the LED sub-units, and a first electrode disposed on the first surface of the substrate and connected to at least one of the connection electrodes.

Abstract: An optical fingerprint sensing apparatus, a driver apparatus, and an operation method are provided. The driver apparatus includes a display driving device and a fingerprint sensing driving device. The display driving device drives the display panel to display different frames with different luminances, and the different frames are used to generate at least one of different transmitted light intensities and different reflected light intensities. The fingerprint sensing driving device drives the display panel to perform a fingerprint capturing operation to capture a plurality of different fingerprint images of a finger under the at least one of the different transmitted light intensities and the different reflected light intensities. The different fingerprint images are processed to generate a processed fingerprint image.

Abstract: A display device including a substrate and a plurality of pixels in a display region of the substrate. Each of the pixels includes first and second sub-pixels, and each of the first and second sub-pixels has a light emitting region for emitting light. The first sub-pixel includes a first light emitting element in the light emitting region and configured to emit visible light. The second sub-pixel includes a second light emitting element in the light emitting region and configured to emit infrared light and a light receiving element configured to receive the infrared light emitted from the second light emitting element to detect a user's touch. The second light emitting element and the light receiving element in the second sub-pixel are electrically insulated from and optically coupled to each other to form a photo-coupler.

Abstract: A photocoupler of an embodiment includes an input terminal, an output terminal, a first MOSFET, a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, and a resin layer. The first MOSFET is joined onto the third lead. The second MOSFET is joined onto the fourth lead. The semiconductor light receiving element is joined to each of the first junction region and the second junction region. The semiconductor light receiving element includes a light receiving region provided in a central part of a surface on opposite side from a surface joined to the first and second MOSFET. The resin layer seals the first and second MOSFETs, the semiconductor light receiving element, the semiconductor light emitting element, an upper surface and a side surface of the input terminal, and an upper surface and a side surface of the output terminal.

Abstract: A display device includes a substrate, a circuit part disposed on the substrate and an encapsulation layer disposed on the circuit pan. An inorganic layer is disposed on the encapsulation layer and includes a groove. An anti-reflection layer is disposed on the inorganic layer. The anti-reflection layer includes a first region that overlaps the groove and a second region that is outside of the first region. The transmittance of the first region and the transmittance of the second region are different from each other.

Abstract: To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate 1, a first conductivity type first nitride semiconductor layer 2 formed on the substrate 1, and a first electrode layer 4 formed on the first nitride semiconductor layer 2. The first electrode layer 4 contains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layer 2 or in the vicinity of the contact surface.

Abstract: An organic light-emitting device and a heterocyclic compound, the device including a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the organic layer includes a heterocyclic compound represented by Formula 1:

Abstract: A light-emitting device includes: a base including a mount surface, and a lateral wall located around the mount surface, the lateral wall having a first upper surface and a second upper surface located at different heights from the mount surface; one or more light-emitting elements mounted on the mount surface of the base; a light-receiving element configured to receive a portion of light emitted from the one or more light-emitting elements; a first light-transmissive member bonded to the first upper surface and sealing a space in which the light-emitting elements are mounted; and a second light-transmissive member bonded to the second upper surface and supporting the light-receiving element.

Abstract: A display device includes a display panel including an opening penetrating the display panel, a display area adjacent to the opening, a first non-display area between the opening and the display area, and a second non-display area surrounding the display area, and an input detecting layer on the display panel. The input detecting layer may include a first line located in the first non-display area, a second line located in the second non-display area, and a connecting line connecting the first line to the second line.

Abstract: A condensed cyclic compound and an organic light-emitting device, the compound being represented by Formula 1:

Abstract: The present disclosure provides a light emitting device including a substrate, a conductive layer, first and second reflective layers, a light emitting element, and an encapsulation layer. The conductive layer is disposed on the substrate. The first reflective layer covers the conductive layer and has an opening exposing a portion of the conductive layer. The light emitting element is disposed in the opening and electrically connects to the conductive layer. The second reflective layer is disposed on the first reflective layer and surrounds the light emitting element, and the second reflective layer has an outer diameter. The encapsulation layer covers the light emitting element. There is a height between a highest point of the encapsulation layer and an upper surface of the first reflective layer, and the height is 0.1 to 0.5 times the outer diameter. The present disclosure also provides a backlight and a display panel.

Abstract: In package intra-chip and/or inter-chip optical communications are provided using microLEDs and photodetectors mounted to integrated circuit (IC) chips and/or to transceiver dies associated with the IC chips. Light from the LEDs may pass through waveguides on or in a substrate to which the IC chips are mounted or which couple the IC chips.

Abstract: An electronic device includes a first electronic component and a second electronic. Each electronic component includes a carrier substrate having a back side and a front side, an electronic chip including an integrated optical element, an overmolded transparent block encapsulating the electronic chip above the carrier substrate, and electrical connections between the electronic chip and electrical contacts of the carrier substrate. An overmolded grid encapsulates and holds the first and second electronic components. The grid is configured so that sides of the first and second electronic components are at least partially exposed.

Abstract: A light-emitting device and a light bulb having the light-emitting device are disclosed. The light-emitting device includes a power supply unit having a first electrode and a second electrode and outputting a current signal, an impedance unit having a first end and a second end; a first light-emitting module forwardly coupled to the first electrode and reversely coupled to the first end; a second light-emitting module forwardly coupled to the second electrode and reversely coupled to the first end; a third light-emitting module reversely coupled to the first electrode and forwardly coupled to the second end; and a fourth light-emitting module reversely coupled to the second electrode and forwardly coupled to the second end.

Abstract: A manufacturing method of an optical sensor package includes: disposing a chip on a circuit board, the chip including a light emitting area and a light receiving area; disposing at least one light emitting element, which is electrically connected to the circuit board, on the light emitting area of the chip; coating a light blocking material between the light emitting area and the light receiving area; filling a light permeable material that covers the circuit board, the chip, the light blocking material, and the at least one light emitting element; removing a part of the light permeable material disposed between the light emitting area and the light receiving area, forming a first recess and expose the light blocking material; and filling an anti-light-leakage material in the first recess, to form a lateral light blocking structure through stacking the anti-light-leakage material and the light blocking material.

Abstract: An opaque dielectric carrier and confinement substrate is formed by a stack of layers laminated on each other. The stack includes a solid back layer and a front frame having a peripheral wall and an intermediate partition which delimits two cavities located on top of the solid back layer and on either side of the intermediate partition. Electronic integrated circuit (IC) chips are located inside the cavities and mounted on top of the solid back layer. Each IC chip includes an integrated optical element. Electrical connections are provided between the IC chips and back electrical contacts of the solid back layer. Transparent encapsulation blocks are molded in the cavities to embed the IC chips.

Abstract: A method of manufacturing a light-emitting device that includes providing a plurality of element structures, each of which includes a submount substrate, a light-emitting element, and a light-transmissive member in this order. The method further includes disposing the plurality of element structures such that the light-transmissive members face a sheet member, and forming a covering member on the sheet member to cover at least a portion of each of lateral surfaces of the submount substrate of each of the element structures.

Abstract: A vapor phase epitaxial growth device comprises a reactor vessel. The device comprises a wafer holder arranged in the reactor vessel. The device comprises a first material gas supply pipe configured to supply first material gas to the reactor vessel. The device comprises a second material gas supply pipe configured to supply second material gas, which is to react with the first material gas, to the reactor vessel. The device comprises a particular gas supply pipe having a solid unit arranged on a supply passage. The device comprises a first heater unit configured to heat the solid unit to a predetermined temperature or higher. The solid unit comprises a mother region and a first region arranged continuously within the mother region. The mother region is a region that does not decompose at the predetermined temperature. The first region is a region that decomposes at the predetermined temperature and contains Mg.

Abstract: A transfer-mold type power module includes a plurality of electrode terminals that is arranged so as to protrude in the same direction from a target side surface of a package. A tie bar cutting residue protruding from a first side surface of each of the electrode terminals and a tie bar cutting residue protruding from a second side surface of each of the electrode terminals are different in position in a length direction of each of the electrode terminals. Each of the electrode terminals has a shape bent at a position including tie bar cutting residue closer to the package, with a width direction of each of the electrode terminals as an axis.

Abstract: A digital pixel driving circuit and a digital pixel driving method. The digital pixel driving circuit includes a pixel driving module, a display module, a storage module and a short-circuiting module. An output terminal of the pixel driving module is electrically connected to an input terminal of the display module, and a control terminal of the pixel driving module is electrically connected to any output terminal of the storage module. An input terminal of the short-circuiting module is electrically connected to the input terminal of the display module, an output terminal of the short-circuiting module is electrically connected to an output terminal of the display module, and a control terminal of the short-circuiting module is electrically connected to any output terminal of the storage module.

Abstract: An electronic device is disclosed. According to an embodiment, an electronic device may comprise: a transparent member; a display panel that is disposed beneath the transparent member and comprises multiple pixels and at least one transmission area which is formed between the multiple pixels and through which light can pass; a biometric sensor which is disposed beneath the display panel and can acquire light that has been output through at least some of the multiple pixels, has been reflected by an external object near or in contact with the transparent member, and then has passed through the at least one transmission area; and a light path changing member disposed between the biometric sensor and the display panel and spaced a predetermined distance apart from the biometric sensor, the light path changing member being able to change an optical path with respect to at least a part of the light having passed through the at least one transmission area.

Abstract: The present invention comprises: a base film on which a first element mounting part and a second element mounting part are defined; wiring patterns formed by extending from each of the first element mounting part and the second element mounting part on the base film, wherein the wiring patterns include a first terminal part in the first element mounting part and a second terminal part in the second element mounting part; and a first plating layer formed on the second terminal part, wherein the first plating layer includes a pure metal plating layer, and the first plating layer is not formed on the first terminal part.

Abstract: A light-emitting component may include an IC chip and an LED chip arranged on a top surface of the IC chip and electrically coupled thereto. The LED chip may be electrically controllable by means of the IC chip. The IC chip may have at least two electrical connecting surface on a bottom surface remote from the LED chip. The light-emitting component is electrically contactable and operable by means of the connecting surfaces.

Abstract: The present specification provides a pixel circuit miniaturized using a smaller number of transistors as compared with the related art. A 4T static random-access memory (SRAM) is used in an embedded pixel memory, and in order to prevent a voltage floating problem from occurring in a logic low state, a leakage current is designed to flow in one direction by adjusting a threshold voltage of a transistor. In addition, a pulse width modulation (PWM) control unit uses a smaller number of transistors as compared with the related art, and in order to prevent a voltage floating problem from occurring, a circuit capable of removing a floating voltage is provided.

Abstract: A heterocyclic compound represented by Formula 1 and an organic electroluminescence device including the same in an emission layer. In Formula 1, Z is represented by Formula 2-1 or 2-2. In Formula 2-2, X1 to X3 are each independently CR10 or N, and at least one of X1 to X3 is N.

Abstract: A display device including a substrate and a plurality of pixels in a display region of the substrate. Each of the pixels includes first and second sub-pixels, and each of the first and second sub-pixels has a light emitting region for emitting light. The first sub-pixel includes a first light emitting element in the light emitting region and configured to emit visible light. The second sub-pixel includes a second light emitting element in the light emitting region and configured to emit infrared light and a light receiving element configured to receive the infrared light emitted from the second light emitting element to detect a user's touch. The second light emitting element and the light receiving element in the second sub-pixel are electrically insulated from and optically coupled to each other to form a photo-coupler.

Abstract: A device includes a display stack and an optical receiver. The display stack includes a set of opaque elements defining a translucent aperture. The translucent aperture extends through the display stack. The optical receiver is spaced apart from and behind a back surface of the display stack. At least one micro-optic element is formed on the back surface of the display stack, between the display stack and the optical receiver. The at least one micro-optic element includes a micro-optic element having a focal point located within the translucent aperture. The optical receiver is configured to receive light through the translucent aperture and the at least one micro-optic element.

Abstract: Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.

Abstract: A complex sensing device packaging structure includes a light emitting element sealed in a first transparent molding material, a light sensing element sealed in a second transparent molding material, a substrate disposed with the light emission element, the light sensing element, the first transparent molding material and the second transparent molding material, and an opaque blocking element disposed on the substrate and between the first transparent molding material and the second transparent molding material, wherein the opaque blocking element is formed by performing a solidifying process to an opaque glue being liquid at the room temperature.