In Combination With Or Also Constituting Light Responsive Device Patents (Class 257/80)
  • Patent number: 10763413
    Abstract: The present application relates to a light emitting diode, a light emitting device, and a display device. The light emitting device includes a light emitting diode and a substrate; the substrate is coated with a bonding substance; the light emitting diode is provided with a positive electrode pad and a negative electrode pad; the surface of the positive electrode pad and/or the negative electrode pad is provided with a plurality of protrusions which are embedded in the bonding substance; and the positive electrode pads and the negative electrode pads are fixed to the substrate through the bonding substance. The embodiment of the present application provides projections on the pad of the light emitting diode, avoids the need of increasing the area of the pad, increases the contact area between the pad and the solder with the constant pad area, improves the bonding stability between the light emitting diode and the substrate, and reduces the production cost.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: September 1, 2020
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., BOE OPTICAL SCIENCE AND TECHNOLOGY CO., LTD.
    Inventor: Tao Wang
  • Patent number: 10749067
    Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: August 18, 2020
    Assignee: STMICROELECTRONICS PTE LTD
    Inventors: Loic Pierre Louis Renard, Cheng-Lay Ang
  • Patent number: 10684389
    Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: June 16, 2020
    Assignees: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, STMICROELECTRONICS PTE LTD
    Inventors: Wing Shenq Wong, Andy Price, Eric Christison
  • Patent number: 10672724
    Abstract: The present technology relates to a semiconductor device, a manufacturing method of a semiconductor device, an integrated substrate, and an electronic device capable of improving moisture resistance of the semiconductor device. The semiconductor device includes a semiconductor chip and a protective member which is a transparent member having moisture resistance and covers at least one of a first surface perpendicular to a side surface of the semiconductor chip or a second surface opposite to the first surface and the side surfaces. The electronic device includes the semiconductor device and the signal processing unit. The present technology is applied to, for example, an imaging element and an electronic device including an imaging element.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: June 2, 2020
    Assignee: SONY CORPORATION
    Inventor: Yuichi Yamamoto
  • Patent number: 10588193
    Abstract: A light emitting diode (LED) module includes a plurality of LED strings and a module controller. The LED strings are connected to each other in parallel, and each of the LED strings emits light that has a different color temperature from that of the other LED strings. The module controller is configured to detect an input voltage applied to the plurality of LED strings, adjust a color temperature of the light emitted by the plurality of LED strings by adjusting a ratio of current respectively supplied to each of the plurality of LED strings based on the input voltage, and reduce a change in a luminous flux of the light emitted by the plurality of LED strings regardless of the color temperature of the light emitted by the plurality of LED strings.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: March 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Bong Jin Lee, June Jang
  • Patent number: 10566760
    Abstract: A light emitting device includes a base, a frame, one or more semiconductor laser elements, a cover member, an optical member fixed to the cover member via an adhesive member, and a pressing member. The adhesive member includes one or more first adhesive portion disposed between an upper surface of the cover member and a lower surface of the optical member, and two or more second adhesive portions respectively disposed at locations in contact with or spaced apart from the one or more first adhesive portions when viewed from above, in contact with the first inner lateral surface of the cover member and the lateral surface of the optical member.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: February 18, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Kazuma Kozuru, Soichiro Miura, Tatsuya Kanazawa
  • Patent number: 10546824
    Abstract: The present disclosure provides a light emitting device including an LED array including a plurality of LED cells connected in series disposed on a single substrate; wherein each LED cell includes a first edge, a second edge, a third edge, and a fourth edge, and wherein the LED array includes a first LED and a second LED, the first edge of the first LED is adjacent to the third edge of the second LED; a first trench, disposed between the first LED cell and the second LED; and a first conducting metal, disposed on the first trench, the first edge of the first LED and the third edge of the second LED, and electrically connecting the first LED and the second LED in series; wherein the first LED and/or the second LED includes a round corner in a top view.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: January 28, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chao Hsing Chen, Chien Fu Shen, Tsun Kai Ko, Schang Jing Hon, Hsin Mao Liu
  • Patent number: 10522521
    Abstract: An illumination assembly includes a substrate, a wiring structure, a reflecting layer and a plurality of light-emitting diodes. The wiring structure is formed on a part of the substrate, and includes a catalyst layer covering the part of the substrate, and a conducting layer formed on the catalyst layer. The reflecting layer is formed on another part of the substrate that is exposed from the wiring structure. The light-emitting diodes are disposed on the wiring structure and are electrically connected to the wiring structure.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: December 31, 2019
    Assignee: Taiwan Green Point Enterprises Co., Ltd.
    Inventors: Yu-Chuan Lin, Pen-Yi Liao, Hui-Ching Chuang, Chih-Hao Chen, Ai-Ling Lin
  • Patent number: 10461225
    Abstract: A method of manufacturing a light-emitting device includes providing a case including a recessed portion and mounting a light-emitting element on a bottom of the recessed portion, putting a first sealing material including a first phosphor particle into the recessed portion, putting a second sealing material including a second phosphor particle on the first sealing material in the recessed portion, and precipitating the second phosphor particle before the second sealing material cures. The second phosphor particle is located above the first phosphor particle after the first and second sealing materials cure.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: October 29, 2019
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Yuta Morimura, Yuhki Ito
  • Patent number: 10439102
    Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: October 8, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Scott D. Schellhammer
  • Patent number: 10414358
    Abstract: An embodiment of the present disclosure provides a method and apparatus for supplying an electrical current. The method comprises sending the electrical current into a device from a panel comprising a dielectric core. Further, the method comprises a first sheet with a first conductive adhesive attaching the first sheet to a first side of the dielectric core, wherein the first conductive adhesive is a first electrode for a battery. Yet further, the method comprises a second sheet with a second conductive adhesive attaching the second sheet to a second side of the dielectric core, wherein the second conductive adhesive is a second electrode for the battery. Still further, the method comprises operating the device using the electrical current from the battery in the panel.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: September 17, 2019
    Assignee: The Boeing Company
    Inventor: Sesinando Prado Macaraeg
  • Patent number: 10416481
    Abstract: The performances of a semiconductor device are improved. The semiconductor device includes an insulation layer, an optical waveguide part formed over the insulation layer, and including a p type semiconductor region and an n type semiconductor region formed therein, and an interlayer insulation film formed over the insulation layer in such a manner as to cover the optical waveguide part. At the first portion of the optical waveguide part, in a cross sectional view perpendicular to the direction of extension of the optical waveguide part, the n type semiconductor region is arranged at the central part of the optical waveguide part, and the p type semiconductor region is arranged in such a manner as to surround the entire circumference of the n type semiconductor region.
    Type: Grant
    Filed: November 6, 2018
    Date of Patent: September 17, 2019
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Tohru Kawai, Shinichi Watanuki, Yasutaka Nakashiba
  • Patent number: 10396261
    Abstract: A method of manufacturing a light emitting device includes: providing a substantially flat plate-shaped base member which in plan view includes at least one first portion having an upper surface, and a second portion surrounding the at least one first portion and having inner lateral surfaces; mounting at least one light emitting element on the at least one first portion; shifting a relative positional relationship between the at least one first portion and the second portion in an upper-lower direction to form at least one recess defined by an upper surface of the at least one first portion that serves as a bottom surface of the at least one recess and at least portions of the inner lateral surfaces of the second portion that serve as lateral surfaces of the at least one recess; and bonding the at least one first portion and the second portion with each other.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: August 27, 2019
    Assignee: Nichia Corporation
    Inventor: Tsuzuki Takahashi
  • Patent number: 10396242
    Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: August 27, 2019
    Assignee: Nichia Corporation
    Inventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
  • Patent number: 10347786
    Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: July 9, 2019
    Assignee: STMICROELECTRONICS PTE LTD
    Inventors: Loic Pierre Louis Renard, Cheng-Lay Ang
  • Patent number: 10330962
    Abstract: A semiconductor waveguide device includes a first semiconductor layer having a first surface, wherein the first surface comprises a first protrusion and a second protrusion collectively forming a first trench in the first semiconductor layer, a second semiconductor layer having a second surface opposing the first surface of the first semiconductor layer, and an insulator layer disposed between and in contact with the first surface and the second surface, wherein the first semiconductor layer, the second semiconductor layer, and the insulator layer form a semiconductor waveguide region, and wherein the first trench is configured to confine a mode of light beam propagation in the semiconductor waveguide region.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: June 25, 2019
    Assignee: Ciena Corporation
    Inventors: Nicolás Abadía Calvo, Luhua Xu, David Patel, David V. Plant, Mahdi Parvizi, Naim Ben-Hamida
  • Patent number: 10326053
    Abstract: A group III nitride semiconductor element includes an active layer between an n-type layer and a p-type layer and has a mesa structure containing the p-type layer, and includes an n electrode on the n-type layer and a p electrode on the p-type layer. The p electrode is obtained by sequentially laminating a first metal layer, a conductive layer and a second metal layer in this order. The resistivity of the conductive layer is higher than the resistivity of the first metal layer.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: June 18, 2019
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Toshiyuki Obata
  • Patent number: 10302492
    Abstract: An optoelectronic sensor device and a method for operating an optoelectronic sensor device are disclosed. In an embodiment the optoelectronic sensor device includes a radiation-emitting semiconductor chip configured to emit radiation with a peak wavelength which depends on a temperature of the radiation-emitting semiconductor chip. The sensor device further includes a sensor chip configured to detect a part of the radiation reflected back to the sensor chip as well as a spectral filter component having an adjustable spectral transmission range. A wavelength determination unit is configured to determine the peak wavelength and a filter driver is configured to adjust the spectral transmission range to the determined peak wavelength.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: May 28, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Rolf Weber
  • Patent number: 10256608
    Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8<y<1, and SizGe(1-z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: April 9, 2019
    Assignee: International Business Machines Corporation
    Inventors: Cheng-Wei Cheng, Effendi Leobandung, Ning Li, Devendra K. Sadana, Kuen-Ting Shiu
  • Patent number: 10224697
    Abstract: An integrated quantum cascade laser includes: a laser structure including first to third regions arranged in a direction of a first axis, the laser structure including a substrate and a laminate including a core layer; first and second metal layers disposed on the third region; third and fourth metal layers disposed on the first region; first to fourth bump electrodes disposed on the first to fourth metal layers, respectively; first and second semiconductor mesas provided in the first region, each of the first and second semiconductor mesas including the core layer; and a distributed Bragg reflector provided in the second region, the distributed Bragg reflector having one or more semiconductor walls. The first and second metal layers are electrically connected to the first and second semiconductor mesas, respectively. The third and fourth metal layers are isolated from the first and second metal layers.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: March 5, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Yukihiro Tsuji
  • Patent number: 10204965
    Abstract: The present disclosure relates to an OLED display panel, including: a thin-film transistor (TFT) array substrate, wherein the TFT array substrate includes a plurality of pixel areas arranged in a matrix and a non-pixel area configured to be outside of the pixel areas, at least one pixel structure formed on the TFT array substrate, wherein each of the pixel structure corresponds to one pixel area, and an organic photovoltaic formed on the corresponding non-pixel area. The present disclosure further relates a manufacturing method of the OLED display panel, including: providing a TFT substrate defined with a plurality of pixel areas and a non-pixel area; forming at least one pixel structure on the pixel areas by adopting a first mask plate to apply a thin film deposition process; forming an organic photovoltaic on the non-pixel area by adopting a second mask plate to apply the thin film deposition process.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: February 12, 2019
    Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.
    Inventor: Peiqian Tong
  • Patent number: 10152992
    Abstract: A light source unit for thermally-assisted magnetic head includes a support member and a light source attached on the support member via a solder, and the light source unit further includes a positioning structure formed between the support member and the light source for positioning the light source and the solder. The light source unit can maintain stable height control of the light source, prevent solder over flow and prevent the light source from shifting and moving during the bonding process.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: December 11, 2018
    Assignee: SAE MAGNETICS (H.K.) LTD.
    Inventors: Ryo Hosoi, Seiichi Takayama, Takashi Honda
  • Patent number: 10149358
    Abstract: In accordance with various embodiments, a programmable current control device for an illumination system receives information representative of a desired output current level, stores information representative of the desired output current level, and maintains the desired output current level for at least a portion of the illumination system.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: December 4, 2018
    Assignee: COOLEDGE LIGHTING INC.
    Inventor: Michael A. Tischler
  • Patent number: 10147708
    Abstract: A light emitting device includes a package including a recess which includes a bottom surface having a substantially circular shape with a circular center, and light emitting elements provided on the bottom surface. Each of the light emitting elements has a substantially regular hexagonal shape. The light emitting elements include a first light emitting element, second light emitting elements provided to surround the first light emitting element, and a light reflective resin disposed between the first light emitting element and the second light emitting elements. The first light emitting element has an element center of the substantially regular hexagonal shape and is disposed on the bottom surface so that the element center substantially coincides with the circular center. Each side of the substantially regular hexagonal shape of the first light emitting element opposes one side of each of the substantially regular hexagonal shapes of the second light emitting elements.
    Type: Grant
    Filed: October 7, 2016
    Date of Patent: December 4, 2018
    Assignee: NICHIA CORPORATION
    Inventor: Kazuya Tamura
  • Patent number: 10114237
    Abstract: Substrates having structured optical appearances are disclosed. The substrate can include a surface having a photonic crystal coating disposed on the surface. The photonic crystal coating comprising capsules, each capsule comprising particles disposed in a medium and the particles are configured to align in an order array upon application of an electromagnetic field.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: October 30, 2018
    Assignee: Apple Inc.
    Inventor: James R. Wilson
  • Patent number: 10107461
    Abstract: A light-emitting display has a circuit board, a spacer, a phosphor film, and a housing. The circuit board is provided with at least one light source. The spacer is disposed on a top surface of the circuit board. The spacer has a through hole which runs through the spacer from top to bottom and corresponds to the at least one light source and the phosphor film respectively. The housing has a reflecting portion and an accommodating space below the reflecting portion. The reflecting portion is located over the phosphor film. The accommodating space accommodates the circuit board, the spacer, and the phosphor film. The present disclosure also provides a method for forming the light-emitting display.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: October 23, 2018
    Assignees: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD., LITE-ON TECHNOLOGY CORPORATION
    Inventors: Jen-Lung Lin, Ju-Ling Cheng, Ming-Kun Weng
  • Patent number: 10073229
    Abstract: In accordance with an embodiment, a transmitter optical subassembly (TOSA) module is disclosed with a base portion that provides one or more mounting surfaces to mount a laser diode and associated driver circuitry in close proximity to allow for direct coupling without the use of an intermediate interconnect device, such as a flexible printed circuit or other interconnect device. The TOSA module base further includes a cylindrical shaped portion with a passageway extending therethrough. The substantially cylindrical shaped portion allows the TOSA module base to mount to a multi-channel TOSA housing via a Z-ring or other suitable welding ring without the use of an intermediate device such as a welding cap.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: September 11, 2018
    Assignee: Applied Optoelectronics, Inc.
    Inventors: I-Lung Ho, Chong Wang, YongXuan Liang
  • Patent number: 9985178
    Abstract: The invention concerns a semiconductor chip (100) with a semiconductor body (2) having a semiconductor layer sequence, and with a substrate body (4) and at least one upper side contact (8). In projection the semiconductor chip (100) has a shape which deviates from a rectangular shape. The invention also concerns a method of separating a composite into a plurality of semiconductor chips (100) along a separation pattern (15) with the steps enabling a plurality of semiconductor chips according to the invention to be produced.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: May 29, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Matthias Goldbach
  • Patent number: 9978910
    Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: May 22, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
  • Patent number: 9972970
    Abstract: A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: May 15, 2018
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Susumu Noda, Takuya Inoue, Takashi Asano, Menaka De Zoysa
  • Patent number: 9917064
    Abstract: A semiconductor device includes a semiconductor element having a lower surface bonded to an insulating substrate side, and a plate-shaped lead terminal bonded to an upper surface of the semiconductor element, and having a horizontally extending portion. The horizontally extending portion in the lead terminal is bonded to the semiconductor element and includes a linearly extending portion in a planar view. The semiconductor device further includes a sealing resin that seals the semiconductor element together with the linearly extending portion in the lead terminal. A linear expansion coefficient of the sealing resin shows a value intermediate between a linear expansion coefficient of the lead terminal and a linear expansion coefficient of the semiconductor element, and the lead terminal includes a recess or a projection to horizontally and partially separate the linearly extending portion into parts.
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: March 13, 2018
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yusuke Ishiyama, Yuji Imoto, Junji Fujino, Shinsuke Asada, Mikio Ishihara
  • Patent number: 9911600
    Abstract: A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: March 6, 2018
    Assignee: INFINEON TECHNOLOGIES AMERICAS CORP.
    Inventors: Paul Bridger, Robert Beach
  • Patent number: 9911892
    Abstract: A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.
    Type: Grant
    Filed: January 3, 2013
    Date of Patent: March 6, 2018
    Assignees: TOTAL S.A., CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, ECOLE POLYTECHNIQUE
    Inventors: Linwei Yu, Pere Roca I Cabarrocas
  • Patent number: 9911890
    Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: March 6, 2018
    Assignee: STMICROELECTRONICS PTE LTD
    Inventors: Loic Pierre Louis Renard, Cheng-Lay Ang
  • Patent number: 9906301
    Abstract: Provided herein is a single module bi-directional optical transmitting and receiving system including a transmitter transmitting an optical signal by converting a down-signal, and obtaining an up-signal by converting y the optical signal that is received, and a receiver transmitting the optical signal by converting the up-signal, and obtaining the down-signal by converting the optical signal that is received, wherein the transmitter and the receiver include a single optical transmitting module including a monitor receiving module, transmit the optical signal through the single optical transmitting module, and receive the optical signal through the monitor receiving module.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: February 27, 2018
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Soo Yong Jung, Jong Jin Lee, Hyun Seo Kang, Sei Hyoung Lee, Hee Seung Kim
  • Patent number: 9899587
    Abstract: A lead frame for an LED package includes a substrate and a bonding electrode, a first connecting electrode, and a second connecting electrode embedded in the substrate. A top surface of the bonding electrode includes a first bonding surface and a second bonding surface spaced from the first bonding surface. A top surface of the first connecting electrode includes separated first and second connecting surfaces. Top surfaces of the bonding electrode, the first connecting electrode, and the second connecting electrode are exposed, and support and electrically connect with light emitting chips. LED packages can be mounted on the lead frame and electrically connect with each other. The conductive layout of the lead frame further permits installation of a zener diode which can be connected to the LED packages in series or in parallel.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: February 20, 2018
    Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
    Inventors: Yau-Tzu Jang, Yu-Liang Huang, Wen-Liang Tseng, Pin-Chuan Chen, Lung-Hsin Chen, Hsing-Fen Lo, Chao-Hsiung Chang, Che-Hsang Huang, Yu-Lun Hsieh
  • Patent number: 9895699
    Abstract: A microfluidic optoelectronic tweezers (OET) device can comprise dielectrophoresis (DEP) electrodes that can be activated and deactivated by controlling a beam of light directed onto photosensitive elements that are disposed in locations that are spaced apart from the DEP electrodes. The photosensitive elements can be photodiodes, which can switch the switch mechanisms that connect the DEP electrodes to a power electrode between an off state and an on state.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: February 20, 2018
    Assignee: Berkeley Lights, Inc.
    Inventors: Steven W. Short, Ming C. Wu
  • Patent number: 9893247
    Abstract: A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: February 13, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Tsuyoshi Tsutsui
  • Patent number: 9852974
    Abstract: A substrate includes a first electrode layer including a first electrode and a second electrode; a second electrode layer including a first electrode and a second electrode; a third electrode layer including a first electrode and a second electrode; and a resin layer. The first electrode layer is arranged on a first side of the resin layer, the third electrode layer is arranged on a second side of the resin layer opposed to the first side, the second electrode layer is positioned in the resin layer, and the first electrode layer is thicker than the second electrode layer. The first and second electrodes of the first electrode layer are positioned inside a peripheral edge of the first side of the resin layer, and the first and second electrodes of the third electrode layer are positioned inside a peripheral edge of the second side of the resin layer.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: December 26, 2017
    Assignees: CITIZEN ELECTRONICS CO., LTD., CITIZENS WATCH CO., LTD.
    Inventor: Yuichi Miura
  • Patent number: 9827799
    Abstract: Disclosed herein is a transfer printing technology. A transfer printing substrate includes a plurality of pillar structures and a sacrificial layer applied thereon. In situ alignment of a transfer layer is performed by the pillar structures and a structural confinement by a concave structure formed on a bottom surface of the transfer layer corresponding to the pillar structures, or a chemical bond of the pillar structure and the transfer layer. In the in situ alignment by the structural confinement, the remaining sacrificial layer after being removed may serve as an adhesive component. The transfer process is performed by a separation of the bond by the sacrificial layer, a cutting of the pillar structures in the chemic bonding state of the pillar structures and the transfer layer, or a separation of the bond between the pillar structures and the handling substrate.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: November 28, 2017
    Assignee: Gwangju Institute of Science and Technology
    Inventors: Heung Cho Ko, Su Ok Yun, Jeong Pil Park, Suk Ho Kim, Young Kyu Hwang, Yujun Hyun, Hun Soo Jang, Yun Kyung Jeong
  • Patent number: 9779522
    Abstract: A method for processing information and an electronic device are disclosed according to the disclosure, and a display unit of the electronic device is capable of being bended with certain curvature. The method includes: once notification signal for notifying the electronic device that a first plane image needs to be displayed is received, detecting and obtaining current bending state parameters for characterizing a current bending state of the display unit based on the notification signal; acquiring the first plane image from memory; performing image processing on the first plane image according to the current bending state parameters; and transmitting the second image to video memory of the display unit, to make a projected image of the second image on a preset plane is the same as the first plane image when the second image is displayed on the display unit of the curved shape.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: October 3, 2017
    Assignees: Beijing Lenovo Software Ltd., Lenovo (Beijing) Co., Ltd.
    Inventor: Fulei Tian
  • Patent number: 9755113
    Abstract: A light emitting device includes a base, a first light emitting unit, a second light emitting unit, a light conversion layer and a lens. The base has a first side slot, a second side slot, and a central slot separated from the first side slot and the second side slot, and the first side slot is formed in a separated recess configuration with a long axis and a short axis. The first light emitting unit is installed in the central slot, and the second light emitting unit is installed in the first side slot. The light conversion layer is covered onto the first light emitting unit or the second light emitting unit, and the lens covers the light conversion layer, the central slot, the first side slot, and the second side slot. The first slot and the lens have first similar contour lines in a top view.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: September 5, 2017
    Assignee: INTERLIGHT OPTOTECH CORPORATION
    Inventors: Hsi-Yan Chou, Tzu-Chi Cheng
  • Patent number: 9735313
    Abstract: A method for manufacturing a semiconductor light emitting device package includes forming a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a growth substrate, forming a reflective layer on a first surface of the light emitting structure corresponding to a surface of the second conductivity-type semiconductor layer, forming bumps on the first surface, the bumps being electrically connected to the first or second conductivity-type semiconductor layer and protruding from the reflective layer, bonding a support substrate to the bumps on the first surface, removing the growth substrate, bonding a light transmissive substrate coated with a wavelength conversion layer to a second surface of the light emitting structure from which the growth substrate is removed, and removing the support substrate.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: August 15, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Il Woo Park, Jung Hoon Kim
  • Patent number: 9728686
    Abstract: A light emitting device and a method of fabricating the same is provided. The device includes an LED chip having a first main surface, a second main surface opposing the first main surface, and one or more side surfaces extending between the first and second main surfaces. A reflective side layer surrounds the one or more side surfaces of the LED chip. The reflective side layer has a first main surface and a second main surface opposing the first main surface extending in a first direction, and an opening extending between the first and second main surfaces in a second direction substantially perpendicular to the first direction. The opening surrounds the chip. A phosphor film overlies the first main surface of the chip and the first main surface of the reflective side layer. At least one electrode is disposed on the second main surface of the chip.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: August 8, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Tae Ok, Min-Jung Kim, Jeong-Hee Kim
  • Patent number: 9728659
    Abstract: A Single-Photon Avalanche Diode (SPAD) device an active region configured to detect incident radiation, a first radiation blocking ring surrounding the active region, and a radiation blocking cover configured to shield part of the active region from the incident radiation. The radiation blocking cover is configured to define a second radiation blocking ring vertically spaced apart from the first radiation blocking ring. The SPAD device may include radiation blocking vias extending between the first and second radiation blocking rings.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: August 8, 2017
    Assignees: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED, STMICROELECTRONICS (GRENOBLE 2) SAS
    Inventors: Flavien Hirigoyen, Bruce Rae, Gaelle Palmigiani, Stuart McLeod
  • Patent number: 9711682
    Abstract: The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: July 18, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Young Hun Han, Rak Jun Choi, Jeong Tak Oh
  • Patent number: 9681566
    Abstract: An electronic arrangement (1) comprising a carrier (2), on which at least one connecting area (6) is arranged. At least one electronic component (3a, 3b, 3c) is fixed on the connecting area (6) by means of a contact material (4). A covering area (5) surrounds the connecting area (6) on the carrier (2). At least one covered region (15, 16, 17, 18, 19) is covered by a covering material (10). The covering material (10) is designed in such a way that an optical contrast between the covering area (5) and the covered region (15, 16, 17, 18, 19) is minimized.
    Type: Grant
    Filed: April 13, 2011
    Date of Patent: June 13, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Thomas Bemmerl, Simon Jerebic, Markus Pindl
  • Patent number: 9680053
    Abstract: A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: June 13, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Masayuki Kuroda, Manabu Yanagihara, Shinichi Oki
  • Patent number: 9645289
    Abstract: Provided is an article having a condition-dependent image, said article comprising (a) a substrate having a surface, (b) upon the surface of the substrate, one or more layers of a clear coating comprising a plurality of beads. Also provided are a method of producing such an article and a method of observing the image on such an article.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: May 9, 2017
    Assignee: ROHM AND HAAS COMPANY
    Inventors: Edwin Hugh Nungesser, Edward La Fleur, Adam Fasula, Partha S. Majumdar
  • Patent number: 9634078
    Abstract: The present inversion provides an organic display device comprising at least infrared display pixel, the infrared display pixel includes a transparent substrate which is deposited with a first electrode layer, an infrared organic light emitting layer and a second electrode layer thereon, and the infrared organic light emitting layer is filled with an infrared light emitting material. The present invention can allow the organic display device to carry out large area of infrared display; and the present invention uses the flexible transparent substrate, so as to conveniently use and carry the organic display device.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 25, 2017
    Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yawei Liu, Yi-Fan Wang