Abstract: The present application provides a mask assembly and a display device. The display device comprises a display area and at least one non-display area, the display area surrounding the non-display area; the display device further comprises a transitional-display area adjoining the non-display area as well as the display area, respectively, wherein both the display area and the transitional-display area are used to display static or dynamic images; a thickness of a first electrode in the transitional-display area is smaller than or equal to a thickness of the first electrode in the display area. The presence of the transitional-display area prevents incomplete display caused by incomplete coverage of the evaporation material in the display device, such as black-edged display formed in an area where a connection bridge is located, thereby improving the display integrity.

Abstract: A platform for design of a lighting installation generally includes an automated search engine for retrieving and storing a plurality of lighting objects in a lighting object library and a lighting design environment providing a visual representation of a lighting space containing lighting space objects and lighting objects. The visual representation is based on properties of the lighting space objects and lighting objects obtained from the lighting object library. A plurality of aesthetic filters is configured to permit a designer in a design environment to adjust parameters of the plurality of lighting objects handled in the design environment to provide a desired collective lighting effect using the plurality of lighting objects.

Abstract: An electronic device may have a display overlapped by a cover layer. Portions of the surface of the display and cover layer may have curved profiles. The display may include a flexible substrate with bent edge portions protruding from a central region. Gaps may be formed between regions of pixels on a common display substrate or between separate display substrates. A light source may emit light through a gap. Optical components such as sensors may be aligned with windows in the display. The windows may be formed from transparent portions of a display layer that are surrounded by pixels. A frame may be used to support the flexible substrate. The frame may have a metal portion and a polymer portion molded to the metal portion. Openings and other structures in the frame may accommodate components such as optical sensors. Components may be aligned with frame openings and display windows.

Abstract: Disclosed herein are light emitting device that emit highly circularly polarized light. These devices may be used to form a dot-matrix display or an electronic information display comprised of a series of photopolymerizable, chiral liquid crystalline layers that can be solvent cast on a substrate. The mixture of chiral materials in each successive layer may be blended in such a way that each layer has the same chiral pitch and may also be blended so that the ordinary and extraordinary refractive indices in each layer match the other layers such that the complete assembly of layers will optically function as a single relatively thick layer of chiral liquid crystal. The chiral nematic material in each layer can spontaneously adopt a helical structure with a helical pitch. Further disclosed are pixel structures that not only emit light with brightness and chromaticity information, but also depth of focus information as well.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a high bandwidth interconnect, a first interposer having high bandwidth circuitry coupled to the package substrate, wherein the high bandwidth circuitry of the first interposer is electrically coupled to the high bandwidth interconnect, and a second interposer having high bandwidth circuitry coupled to the package substrate, wherein the high bandwidth circuitry of the second interposer is electrically coupled to the high bandwidth interconnect, and wherein the first interposer is electrically coupled to the second interposer via the high bandwidth interconnect.

Abstract: A display device including a display area and a sensor area which includes a transmission part comprises a substrate, display elements disposed on the substrate and including a first display element and a second display element spaced apart from each another with the transmission part therebetween, pixel circuits including a first pixel circuit electrically connected to the first display element and a second pixel circuit electrically connected to the second display element, and a light-shielding layer including a part overlapping the first pixel circuit and the second pixel circuit and the light-shielding layer includes a hole corresponding to the transmission part, the width of the hole of the light-shielding layer is less than a separation distance between the first display element and the second display element.

Abstract: A light emitting device with on-chip optical power readout includes a light emitting mesa and a light detecting mesa formed adjacent to each other on the same substrate of a chip, and a portion of the light emitted from the light emitting mesa is transmitted to the light detecting mesa at least through the substrate. The light emitting mesa and the light detecting mesa have exactly the same epitaxial structure and can be electrically isolated from each other by an insulation layer, or an airgap formed therebetween, or by ion implantation. The light emitting mesa and the light detecting mesa can also share an n-type structure and a common n-electrode while having their own p-electrode, respectively.

Abstract: The invention relates to an optical group for detection light of a microscope, in particular a confocal scanning microscope, having an input plane (10) for the passage of detection light to be measured and having a detection beam path arranged downstream of the input plane for guiding the detection light (11) into a detection plane (67), wherein the detection beam path has at least one first beam course (1) having first optical beam-guiding means, in particular first lenses and/or mirrors (20, 30, 34, 36, 58, 60, 66), for guiding the detection light into the detection plane. In the first beam course, the optical group has at least one dispersive device (26) for the spatial spectral splitting of the detection light to be measured and a manipulation device (49) for manipulating the spectrally spatially split detection light.

Abstract: Provided is a photo-detection device including: a semiconductor substrate having a first face; a pixel unit in which a pixel having an avalanche diode is arranged in the semiconductor substrate; and a sixth semiconductor region arranged so as to surround a first semiconductor region to a fifth semiconductor region that form the avalanche diode in a planar view from a direction perpendicular to the first face, and an electric potential that is different from the electric potential supplied to the avalanche diode is supplied to the sixth semiconductor region.

Abstract: An optoelectronic device including an active area capable of supplying an electromagnetic radiation and sandwiched between first and second semiconductor layers, the first semiconductor layer delimiting a surface, the optoelectronic device further including a diffraction grating capable of extracting the electromagnetic radiation from the first semiconductor layer, the diffraction grating including holes extending in the first semiconductor layer from said surface, the width of the holes measured in a plane parallel to said surface increasing from a central portion of the diffraction grating to a peripheral portion of the diffraction grating.

Abstract: An image sensor includes a substrate and first and second transfer gates. The substrate includes not only a photodiode in which photocharges corresponding to the amount of incident light are accumulated, but also a floating diffusion (FD) region in which the photocharges are received and accumulated. The first and second transfer gates transmit the photocharges from the photodiode to the floating diffusion (FD) region. At least some parts of the first transfer gate are formed to overlap with the second transfer gate.

Abstract: A nanolaser includes a silicon substrate and a III-V layer formed on the silicon substrate having a defect density due to differences in materials. A laser region is formed on or in the III-V layer, the laser region having a size based upon the defect density.

Abstract: Provided is a package structure including at least two chips, an interposer, a first encapsulant, and a second encapsulant. The at least two chips are disposed side by side and bonded to the interposer by a plurality of connectors. The first encapsulant is disposed on the interposer and filling in a gap between the at least two chips. The second encapsulant encapsulates the plurality of connectors and surrounding the at least two chips, wherein the second encapsulant is in contact with the first encapsulant sandwiched between the at least two chips, and a material of the second encapsulant has a coefficient of thermal expansion (CTE) larger than a CTE of a material of the first encapsulant. A method of manufacturing a package structure is also provided.

Abstract: Techniques related to optics formation using pick-up tools are disclosed. Optical elements are formed by pressing a pick-up tool (PUT) against elastomeric material deposited on a light-outputting side of light-emitting diode (LED) devices. Pressing the PUT against the elastomeric material causes a molded shape of the PUT to be transferred to the elastomeric material. This forms the optical elements in the elastomeric material.

Abstract: A method for receiving a modulated receive signal, with a transmission unit having a laser and an electro-absorption modulator. The received optical receive signal is directed towards the laser; due to the irradiance of the optical receive signal onto the laser, the optical frequency of the light radiated from the laser is adapted to and/or aligned with the optical frequency of the received optical receive signal; the light radiated from the laser and the optical receive signal received via the optical waveguide are overlapped in the electro-absorption modulator; the thus-created overlapping signal from the electro-absorption modulator is converted into an electrical receive signal, in particular into an electrical current signal; and a receive signal is provided which corresponds to the electrical receive signal or is derived from same.

Abstract: A photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode and configured to convert light in a particular wavelength spectrum of light of a visible wavelength spectrum of light into an electric signal. The photoelectric conversion layer may include a p-type semiconductor configured to selectively absorb light in a first wavelength spectrum and an n-type semiconductor having a peak absorption wavelength in a second wavelength spectrum of greater than or equal to about 750 nm, an image sensor. The photoelectric conversion layer may include a first semiconductor of an absorption spectrum of a first peak absorption wavelength, and a second semiconductor of an absorption spectrum of a second peak absorption wavelength that is longer than the first peak absorption wavelength by at least about 100 nm.

Abstract: A group III nitride semiconductor light-emitting element is provided which includes an active layer between an n-type layer and a p-type layer, an n-electrode on the n-type layer, and a p-electrode on the p-type layer, and having a mesa structure including the p-type layer, and is characterized in that: the p-electrode has, in a top view of the group III nitride semiconductor light-emitting element, a protruding portion in a mesa end direction and an n-electrode non-formation region in the vicinity of the mesa end of a projecting end portion of the protruding portion.

Abstract: The present application relates to a light emitting diode, a light emitting device, and a display device. The light emitting device includes a light emitting diode and a substrate; the substrate is coated with a bonding substance; the light emitting diode is provided with a positive electrode pad and a negative electrode pad; the surface of the positive electrode pad and/or the negative electrode pad is provided with a plurality of protrusions which are embedded in the bonding substance; and the positive electrode pads and the negative electrode pads are fixed to the substrate through the bonding substance. The embodiment of the present application provides projections on the pad of the light emitting diode, avoids the need of increasing the area of the pad, increases the contact area between the pad and the solder with the constant pad area, improves the bonding stability between the light emitting diode and the substrate, and reduces the production cost.

Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.

Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.

Abstract: The present technology relates to a semiconductor device, a manufacturing method of a semiconductor device, an integrated substrate, and an electronic device capable of improving moisture resistance of the semiconductor device. The semiconductor device includes a semiconductor chip and a protective member which is a transparent member having moisture resistance and covers at least one of a first surface perpendicular to a side surface of the semiconductor chip or a second surface opposite to the first surface and the side surfaces. The electronic device includes the semiconductor device and the signal processing unit. The present technology is applied to, for example, an imaging element and an electronic device including an imaging element.

Abstract: A light emitting diode (LED) module includes a plurality of LED strings and a module controller. The LED strings are connected to each other in parallel, and each of the LED strings emits light that has a different color temperature from that of the other LED strings. The module controller is configured to detect an input voltage applied to the plurality of LED strings, adjust a color temperature of the light emitted by the plurality of LED strings by adjusting a ratio of current respectively supplied to each of the plurality of LED strings based on the input voltage, and reduce a change in a luminous flux of the light emitted by the plurality of LED strings regardless of the color temperature of the light emitted by the plurality of LED strings.

Abstract: A light emitting device includes a base, a frame, one or more semiconductor laser elements, a cover member, an optical member fixed to the cover member via an adhesive member, and a pressing member. The adhesive member includes one or more first adhesive portion disposed between an upper surface of the cover member and a lower surface of the optical member, and two or more second adhesive portions respectively disposed at locations in contact with or spaced apart from the one or more first adhesive portions when viewed from above, in contact with the first inner lateral surface of the cover member and the lateral surface of the optical member.

Abstract: The present disclosure provides a light emitting device including an LED array including a plurality of LED cells connected in series disposed on a single substrate; wherein each LED cell includes a first edge, a second edge, a third edge, and a fourth edge, and wherein the LED array includes a first LED and a second LED, the first edge of the first LED is adjacent to the third edge of the second LED; a first trench, disposed between the first LED cell and the second LED; and a first conducting metal, disposed on the first trench, the first edge of the first LED and the third edge of the second LED, and electrically connecting the first LED and the second LED in series; wherein the first LED and/or the second LED includes a round corner in a top view.

Abstract: An illumination assembly includes a substrate, a wiring structure, a reflecting layer and a plurality of light-emitting diodes. The wiring structure is formed on a part of the substrate, and includes a catalyst layer covering the part of the substrate, and a conducting layer formed on the catalyst layer. The reflecting layer is formed on another part of the substrate that is exposed from the wiring structure. The light-emitting diodes are disposed on the wiring structure and are electrically connected to the wiring structure.

Abstract: A method of manufacturing a light-emitting device includes providing a case including a recessed portion and mounting a light-emitting element on a bottom of the recessed portion, putting a first sealing material including a first phosphor particle into the recessed portion, putting a second sealing material including a second phosphor particle on the first sealing material in the recessed portion, and precipitating the second phosphor particle before the second sealing material cures. The second phosphor particle is located above the first phosphor particle after the first and second sealing materials cure.

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

Abstract: The performances of a semiconductor device are improved. The semiconductor device includes an insulation layer, an optical waveguide part formed over the insulation layer, and including a p type semiconductor region and an n type semiconductor region formed therein, and an interlayer insulation film formed over the insulation layer in such a manner as to cover the optical waveguide part. At the first portion of the optical waveguide part, in a cross sectional view perpendicular to the direction of extension of the optical waveguide part, the n type semiconductor region is arranged at the central part of the optical waveguide part, and the p type semiconductor region is arranged in such a manner as to surround the entire circumference of the n type semiconductor region.

Abstract: An embodiment of the present disclosure provides a method and apparatus for supplying an electrical current. The method comprises sending the electrical current into a device from a panel comprising a dielectric core. Further, the method comprises a first sheet with a first conductive adhesive attaching the first sheet to a first side of the dielectric core, wherein the first conductive adhesive is a first electrode for a battery. Yet further, the method comprises a second sheet with a second conductive adhesive attaching the second sheet to a second side of the dielectric core, wherein the second conductive adhesive is a second electrode for the battery. Still further, the method comprises operating the device using the electrical current from the battery in the panel.

Abstract: A method of manufacturing a light emitting device includes: providing a substantially flat plate-shaped base member which in plan view includes at least one first portion having an upper surface, and a second portion surrounding the at least one first portion and having inner lateral surfaces; mounting at least one light emitting element on the at least one first portion; shifting a relative positional relationship between the at least one first portion and the second portion in an upper-lower direction to form at least one recess defined by an upper surface of the at least one first portion that serves as a bottom surface of the at least one recess and at least portions of the inner lateral surfaces of the second portion that serve as lateral surfaces of the at least one recess; and bonding the at least one first portion and the second portion with each other.

Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.

Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.

Abstract: A semiconductor waveguide device includes a first semiconductor layer having a first surface, wherein the first surface comprises a first protrusion and a second protrusion collectively forming a first trench in the first semiconductor layer, a second semiconductor layer having a second surface opposing the first surface of the first semiconductor layer, and an insulator layer disposed between and in contact with the first surface and the second surface, wherein the first semiconductor layer, the second semiconductor layer, and the insulator layer form a semiconductor waveguide region, and wherein the first trench is configured to confine a mode of light beam propagation in the semiconductor waveguide region.

Abstract: A group III nitride semiconductor element includes an active layer between an n-type layer and a p-type layer and has a mesa structure containing the p-type layer, and includes an n electrode on the n-type layer and a p electrode on the p-type layer. The p electrode is obtained by sequentially laminating a first metal layer, a conductive layer and a second metal layer in this order. The resistivity of the conductive layer is higher than the resistivity of the first metal layer.

Abstract: An optoelectronic sensor device and a method for operating an optoelectronic sensor device are disclosed. In an embodiment the optoelectronic sensor device includes a radiation-emitting semiconductor chip configured to emit radiation with a peak wavelength which depends on a temperature of the radiation-emitting semiconductor chip. The sensor device further includes a sensor chip configured to detect a part of the radiation reflected back to the sensor chip as well as a spectral filter component having an adjustable spectral transmission range. A wavelength determination unit is configured to determine the peak wavelength and a filter driver is configured to adjust the spectral transmission range to the determined peak wavelength.

Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8<y<1, and SizGe(1-z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.

Abstract: An integrated quantum cascade laser includes: a laser structure including first to third regions arranged in a direction of a first axis, the laser structure including a substrate and a laminate including a core layer; first and second metal layers disposed on the third region; third and fourth metal layers disposed on the first region; first to fourth bump electrodes disposed on the first to fourth metal layers, respectively; first and second semiconductor mesas provided in the first region, each of the first and second semiconductor mesas including the core layer; and a distributed Bragg reflector provided in the second region, the distributed Bragg reflector having one or more semiconductor walls. The first and second metal layers are electrically connected to the first and second semiconductor mesas, respectively. The third and fourth metal layers are isolated from the first and second metal layers.

Abstract: The present disclosure relates to an OLED display panel, including: a thin-film transistor (TFT) array substrate, wherein the TFT array substrate includes a plurality of pixel areas arranged in a matrix and a non-pixel area configured to be outside of the pixel areas, at least one pixel structure formed on the TFT array substrate, wherein each of the pixel structure corresponds to one pixel area, and an organic photovoltaic formed on the corresponding non-pixel area. The present disclosure further relates a manufacturing method of the OLED display panel, including: providing a TFT substrate defined with a plurality of pixel areas and a non-pixel area; forming at least one pixel structure on the pixel areas by adopting a first mask plate to apply a thin film deposition process; forming an organic photovoltaic on the non-pixel area by adopting a second mask plate to apply the thin film deposition process.

Abstract: A light source unit for thermally-assisted magnetic head includes a support member and a light source attached on the support member via a solder, and the light source unit further includes a positioning structure formed between the support member and the light source for positioning the light source and the solder. The light source unit can maintain stable height control of the light source, prevent solder over flow and prevent the light source from shifting and moving during the bonding process.

Abstract: A light emitting device includes a package including a recess which includes a bottom surface having a substantially circular shape with a circular center, and light emitting elements provided on the bottom surface. Each of the light emitting elements has a substantially regular hexagonal shape. The light emitting elements include a first light emitting element, second light emitting elements provided to surround the first light emitting element, and a light reflective resin disposed between the first light emitting element and the second light emitting elements. The first light emitting element has an element center of the substantially regular hexagonal shape and is disposed on the bottom surface so that the element center substantially coincides with the circular center. Each side of the substantially regular hexagonal shape of the first light emitting element opposes one side of each of the substantially regular hexagonal shapes of the second light emitting elements.

Abstract: In accordance with various embodiments, a programmable current control device for an illumination system receives information representative of a desired output current level, stores information representative of the desired output current level, and maintains the desired output current level for at least a portion of the illumination system.

Abstract: Substrates having structured optical appearances are disclosed. The substrate can include a surface having a photonic crystal coating disposed on the surface. The photonic crystal coating comprising capsules, each capsule comprising particles disposed in a medium and the particles are configured to align in an order array upon application of an electromagnetic field.

Abstract: A light-emitting display has a circuit board, a spacer, a phosphor film, and a housing. The circuit board is provided with at least one light source. The spacer is disposed on a top surface of the circuit board. The spacer has a through hole which runs through the spacer from top to bottom and corresponds to the at least one light source and the phosphor film respectively. The housing has a reflecting portion and an accommodating space below the reflecting portion. The reflecting portion is located over the phosphor film. The accommodating space accommodates the circuit board, the spacer, and the phosphor film. The present disclosure also provides a method for forming the light-emitting display.

Abstract: In accordance with an embodiment, a transmitter optical subassembly (TOSA) module is disclosed with a base portion that provides one or more mounting surfaces to mount a laser diode and associated driver circuitry in close proximity to allow for direct coupling without the use of an intermediate interconnect device, such as a flexible printed circuit or other interconnect device. The TOSA module base further includes a cylindrical shaped portion with a passageway extending therethrough. The substantially cylindrical shaped portion allows the TOSA module base to mount to a multi-channel TOSA housing via a Z-ring or other suitable welding ring without the use of an intermediate device such as a welding cap.

Abstract: The invention concerns a semiconductor chip (100) with a semiconductor body (2) having a semiconductor layer sequence, and with a substrate body (4) and at least one upper side contact (8). In projection the semiconductor chip (100) has a shape which deviates from a rectangular shape. The invention also concerns a method of separating a composite into a plurality of semiconductor chips (100) along a separation pattern (15) with the steps enabling a plurality of semiconductor chips according to the invention to be produced.

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract: A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.

Abstract: A semiconductor device includes a semiconductor element having a lower surface bonded to an insulating substrate side, and a plate-shaped lead terminal bonded to an upper surface of the semiconductor element, and having a horizontally extending portion. The horizontally extending portion in the lead terminal is bonded to the semiconductor element and includes a linearly extending portion in a planar view. The semiconductor device further includes a sealing resin that seals the semiconductor element together with the linearly extending portion in the lead terminal. A linear expansion coefficient of the sealing resin shows a value intermediate between a linear expansion coefficient of the lead terminal and a linear expansion coefficient of the semiconductor element, and the lead terminal includes a recess or a projection to horizontally and partially separate the linearly extending portion into parts.

Abstract: A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.

Abstract: A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.