With Heterojunction Patents (Class 257/90)
  • Patent number: 10756260
    Abstract: A method of forming magnetic device structures and electrical contacts, including removing a portion of a second interlayer dielectric (ILD) layer to expose an underlying portion of a cap layer in a first device region, wherein the cap layer is on a first ILD layer, while leaving an ILD block in a second device region, forming a spacer layer on the exposed portion of the cap layer in the first device region, forming an electrical contact layer on the spacer layer in the first device region, forming a magnetic device layer on the electrical contact layer and ILD block, removing portions of the magnetic device layer to form a magnetic device stack on the ILD block, and removing portions of the electrical contact layer to form electrical contact pillars, wherein the portions of the electrical contact layer and portions of the magnetic device layer are removed at the same time.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: August 25, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Lawrence A. Clevenger, Liying Jiang, Sebastian Naczas, Michael Rizzolo, Chih-Chao Yang
  • Patent number: 10580825
    Abstract: Disclosed are a method of manufacturing display device, an epitaxial wafer and a display device that includes a display substrate, a first sub pixel unit and a second sub pixel unit. The first sub pixel unit and the second sub pixel unit belong to same color type. The first sub pixel unit and the second sub pixel unit are formed from an epitaxial structure on the epitaxial wafer. The first sub pixel unit and the second sub pixel unit are formed and transferred to the display substrate from the epitaxial wafer. A first light emitting area of the first sub pixel unit and a second light emitting area of the second sub pixel unit are related to at least the photoluminescence measurement result of the epitaxial wafer.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: March 3, 2020
    Assignee: PLAYNITRIDE INC.
    Inventor: Yu-Hung Lai
  • Patent number: 10431644
    Abstract: An improved organic light-emitting display apparatus prevents damage of wiring due to a mask during the manufacturing process, and a manufacturing method thereof. An organic light-emitting display apparatus includes a display unit formed on a substrate, a pad unit formed at one outer side of the display unit on the substrate, a wiring unit formed as a multilayer structure on the substrate to couple the display unit to the pad unit, a thin film encapsulating layer covering the display unit, and a protrusion unit that does not overlap the uppermost layer of wiring of the multilayered wiring unit.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: October 1, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yang-Wan Kim, Won-Kyu Kwak
  • Patent number: 10388691
    Abstract: A color stacked light emitting diode (LED) pixel is disclosed. The color stacked LED includes an LED pixel structure body, a base LED disposed on at least a portion of the LED pixel structure body, an intermediate LED disposed on the base LED, and a top LED disposed on the intermediate LED. The stacked LED may be an overlapping or a non-overlapping LED pixel. The LED pixel structure body may be a fin body or a nanowire body.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: August 20, 2019
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Srinivasa Banna, Deepak Nayak, Ajey P. Jacob
  • Patent number: 10361364
    Abstract: A method of forming magnetic device structures and electrical contacts, including removing a portion of a second interlayer dielectric (ILD) layer to expose an underlying portion of a cap layer in a first device region, wherein the cap layer is on a first ILD layer, while leaving an ILD block in a second device region, forming a spacer layer on the exposed portion of the cap layer in the first device region, forming an electrical contact layer on the spacer layer in the first device region, forming a magnetic device layer on the electrical contact layer and ILD block, removing portions of the magnetic device layer to form a magnetic device stack on the ILD block, and removing portions of the electrical contact layer to form electrical contact pillars, wherein the portions of the electrical contact layer and portions of the magnetic device layer are removed at the same time.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: July 23, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Lawrence A. Clevenger, Liying Jiang, Sebastian Naczas, Michael Rizzolo, Chih-Chao Yang
  • Patent number: 10346662
    Abstract: A fingerprint recognition device includes a light-transmissible substrate, a plurality of sensing elements, a set of conductive lines and a fingerprint recognition chip. The sensing elements are disposed and the set of conductive lines are an upper surface of the light-transmissible substrate. The fingerprint recognition chip is also disposed on the upper surface of the light-transmissible substrate, and is connected to the sensing elements through the set of conductive lines. The fingerprint recognition chip drives the sensing elements, receives a plurality of sensing results generated by the sensing elements, and accordingly determines a user fingerprint.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: July 9, 2019
    Assignee: ILI TECHNOLOGY CORP.
    Inventors: Chia-Wei Chang, Tzu Wei Liu
  • Patent number: 10304998
    Abstract: A light emitting diode (LED) chip can include: a first pattern region having one or more curved parts; and a second pattern region at least partially surrounding the first pattern region. The first pattern region can include a first conductive type nitride-based semiconductor layer, an active layer, a second conductive type nitride-based semiconductor layer, a top electrode layer, and a top bump layer stacked over a substrate, the second pattern region can include a first conductive type nitride-based semiconductor layer, a bottom electrode layer, and a bottom bump layer stacked over the substrate, and the first pattern region can include one or more protrusion patterns formed in the one or more curved part.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: May 28, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Chang Hoon Kim, Sang Min Kim, Chi Hyun In, Hong Suk Cho, Dae Seok Park
  • Patent number: 10283498
    Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: May 7, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Seom Geun Lee, Yeo Jin Yoon, Jae Kwon Kim, So Ra Lee, Myoung Hak Yang
  • Patent number: 10014442
    Abstract: A vertical type light emitting diode includes a nitride semiconductor having a p-n conjunction structure with a transparent material layer formed on a p type clad layer, the transparent material layer having a refractive index different from that of the p type clad layer and having a pattern structure of mesh, punched plate, or one-dimensional grid form, etc. A reflective metal electrode layer is formed on the transparent material layer as a p-electrode. A stereoscopic pattern is formed in the transparent material layer and the p-electrode deposited, and thereby forming the pattern in the p-electrode. Depositing the p-electrode on only 10 to 70% of the upper portion of the p type clad layer in an ultraviolet ray light emitting diode such that an area where the p type clad layer is exposed is wide increases the transmittance of ultraviolet rays through an area where the p-electrode is not deposited.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: July 3, 2018
    Assignee: Korea Polytechnic University Industry Academic Cooperation Foundation
    Inventors: Kyoung Kook Kim, Se Mi Oh
  • Patent number: 9893051
    Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: February 13, 2018
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Seom Geun Lee, Yeo Jin Yoon, Jae Kwon Kim, So Ra Lee, Myoung Hak Yang
  • Patent number: 9559142
    Abstract: A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the array of bank openings. A ground line is located in the non-pixel area and an array of ground tie lines run between the bank openings in the pixel area and are electrically connected to the ground line in the non-pixel area.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: January 31, 2017
    Assignee: Apple Inc.
    Inventors: Kapil V. Sakariya, Andreas Bibl, Hsin-Hua Hu
  • Patent number: 9508698
    Abstract: A light emitting device includes a substrate having a top surface, upper and lower metal layers, multiple LED chips, at least one Zener diode, multiple conductive wires and an encapsulant. The top surface includes a central region bounded by an imaginary boundary with a profile conforming to an outline of a circle stacked with a polygon. The central region has a die bonding area corresponding to the circle, and at least one polygonal extension area formed outside the die bonding area. The upper metal layer includes multiple conducting pads surrounding the central region. The LED chips are disposed on the die bonding area. The Zener diode is disposed on the polygonal extension area. The encapsulant is disposed on the substrate and covers the LED chips.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: November 29, 2016
    Assignees: Lite-On Opto Technology (ChangZhou) Co. Ltd., Lite-On Technology Corp.
    Inventor: Chen-Hsiu Lin
  • Patent number: 9466647
    Abstract: A flat panel display device includes: a substrate; an insulating layer having first, second, and third openings; a plurality of first lines on the insulating layer overlapped with the first openings, extending in a first direction, and including a first organic light-emitting layer; a plurality of second lines on the insulating layer overlapped with the second openings, extending in the first direction, and including a second organic light-emitting layer that is different from the first organic light-emitting layer; and a plurality of third lines on the insulating layer overlapped with the third openings, extending in the first direction, and including a third organic light-emitting layer that is different from the first and second organic light-emitting layers. Adjacent first and second lines are partially overlapped with each other, and the first, second, and third lines are not overlapped with the openings overlapped with other ones of the lines.
    Type: Grant
    Filed: March 9, 2013
    Date of Patent: October 11, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventor: Sang-Nam Na
  • Patent number: 9370074
    Abstract: To achieve desired display on a display surface and accurate image capture in a display device with an imaging function. A light source for display (a first light-emitting element) and a light source for image capture (a second light-emitting element) that does not adversely affect display when it is on are separately provided in the display device with an imaging function. In the display device, an image can be appropriately captured using the light source for image capture in a period during which display is performed using the light source for display. Consequently, desired display on the display surface and accurate image capture can be achieved in the display device.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: June 14, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yoshiyuki Kurokawa
  • Patent number: 9349911
    Abstract: A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the CMOS process can be eliminated.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: May 24, 2016
    Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
    Inventors: Kei May Lau, Chi Wing Keung, Zhaojun Liu
  • Patent number: 9142535
    Abstract: A first layer of first vertical light emitting diodes (VLEDs) is printed on a conductor surface. A first transparent conductor layer is deposited over the first VLEDs to electrically contact top electrodes of the first VLEDs. A second layer of second VLEDs is printed on the first transparent conductor layer. Since the VLEDs are printed as an ink, the second VLEDs are not vertically aligned with the first VLEDs, so light from the first VLEDs is not substantially blocked by the second VLEDs when the VLEDs are turned on. A second transparent conductor layer is deposited over the second VLEDs to electrically contact top electrodes of the second VLEDs. By this structure, the first VLEDs are connected in parallel, the second VLEDs are connected in parallel, and the first layer of first VLEDs and the second layer of second VLEDs are connected in series by the first transparent conductor layer.
    Type: Grant
    Filed: January 8, 2014
    Date of Patent: September 22, 2015
    Assignee: Nthdegree Technologies Worldwide Inc.
    Inventor: Bradley Steven Oraw
  • Patent number: 9123682
    Abstract: A light-emission device includes a substrate and a G light-emission layer; an R light-emission layer, a B light-emission layer, and a wiring layer made of metal that are each arranged above the substrate. Each of the G light-emission layer, the R light-emission layer, and the B light-emission layer contains light-emission material. An amount of heat that the B light-emission layer generates upon light emission is greater than an amount of heat that the G light-emission layer generates upon light emission. Further, the B light-emission layer directly faces the wiring layer at a facing edge portion.
    Type: Grant
    Filed: April 17, 2013
    Date of Patent: September 1, 2015
    Assignee: JOLED INC.
    Inventors: Naoko Mizusaki, Kenichi Nendai
  • Patent number: 9087961
    Abstract: A light emitting device includes a first conductive semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum barrier (114b) on the first conductive semiconductor layer (112). An undoped last barrier layer (127) is provided on the active layer (114), and an AlxInyGa(1?x?y)N (0?x?1, 0?y?1)-based layer (128) is provided on the undoped last barrier layer (127). A second conductive semiconductor layer (116) is provided on the AlxInyGa(1?x?y)N-based layer (128).
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: July 21, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Yong Tae Moon, Hyun Chul Lim
  • Patent number: 9041025
    Abstract: A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using PMOS process, NMOS process, or CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity.
    Type: Grant
    Filed: December 5, 2013
    Date of Patent: May 26, 2015
    Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
    Inventors: Kei May Lau, Zhaojun Liu
  • Patent number: 9034685
    Abstract: The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: May 19, 2015
    Assignees: Dow Global Technologies LLC, California Institute of Technology
    Inventors: Gregory M. Kimball, Jeffrey P. Bosco, Harry A. Atwater, Nathan S. Lewis, Marty W. Degroot, James C. Stevens
  • Patent number: 9012886
    Abstract: According to one embodiment, a semiconductor light emitting device includes: a first semiconductor layer; a second semiconductor layer; and a light emitting layer provided between the first and the second semiconductor layers. The first semiconductor layer includes a nitride semiconductor, and is of an n-type. The second semiconductor layer includes a nitride semiconductor, and is of a p-type. The light emitting layer includes: a first well layer; a second well layer provided between the first well layer and the second semiconductor layer; a first barrier layer provided between the first and the second well layers; and a first Al containing layer contacting the second well layer between the first barrier layer and the second well layer and containing layer containing Alx1Ga1-x1N (0.1?x1?0.35).
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: April 21, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jongil Hwang, Shinji Saito, Rei Hashimoto, Shinya Nunoue
  • Patent number: 8981580
    Abstract: A bonding pad structure is provided that includes two conductive layers and a connective layer interposing the two conductive layers. The connective layer includes a contiguous, conductive structure. In an embodiment, the contiguous conductive structure is a solid layer of conductive material. In other embodiments, the contiguous conductive structure is a conductive network including, for example, a matrix configuration or a plurality of conductive stripes. At least one dielectric spacer may interpose the conductive network. Conductive plugs may interconnect a bond pad and one of the conductive layers.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: March 17, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shin-Puu Jeng, Yu-Wen Liu, Hao-Yi Tsai, Hsien-Wei Chen
  • Patent number: 8981392
    Abstract: There is provided a light emitting device package including: a package substrate; a blue light emitting device and a green light emitting device mounted on the package substrate; a flow prevention part formed on the package substrate and substantially enclosing the blue light emitting device; and a wavelength conversion part including a red wavelength conversion material and formed on a region defined by the flow prevention part to cover the blue light emitting device, so that white light having a high degree of color reproducibility may be emitted thereby.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Ho Young Song
  • Publication number: 20150069433
    Abstract: Light emitting systems and method of fabricating the same are disclosed. The light emitting system includes two or more monolithically integrated luminescent elements. Each luminescent element includes an electroluminescent device and a dedicated switching circuit for driving the electroluminescent device. At least one luminescent element includes a potential well for down converting light emitted by the electroluminescent device in the luminescent element.
    Type: Application
    Filed: November 17, 2014
    Publication date: March 12, 2015
    Inventor: Michael A. Haase
  • Patent number: 8969891
    Abstract: According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
    Type: Grant
    Filed: April 28, 2014
    Date of Patent: March 3, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomonari Shioda, Hung Hung, Jongil Hwang, Taisuke Sato, Naoharu Sugiyama, Shinya Nunoue
  • Patent number: 8952398
    Abstract: An LED lighting module includes a support board with a first LED and a second LED thereon. The wavelength of light emitted by the first LED is different from that of light emitted by the second LED. The height of the first LED is different from that of the second LED for preventing the emitting light of the first LED absorbed by the wavelength conversion layer of the second LED.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: February 10, 2015
    Assignee: Lextar Electronics Corporation
    Inventors: Jian-Jhih Lin, Yi-Ching Wang
  • Patent number: 8941093
    Abstract: A first electrode, an intrinsic first compound semiconductor layer over the first electrode, a second compound semiconductor layer whose band gap is smaller than that of the first compound semiconductor layer on the first compound semiconductor layer, and a second electrode over the second compound semiconductor layer are provided.
    Type: Grant
    Filed: August 21, 2013
    Date of Patent: January 27, 2015
    Assignee: Fujitsu Limited
    Inventor: Tadahiro Imada
  • Patent number: 8941139
    Abstract: A method of manufacturing a light-emitting element mounting package including laminating a metallic layer on an insulating layer; forming a light-emitting element mounting area which includes a pair of electroplating films formed by electroplating using the metallic layer as a power supply layer on the metallic layer; forming a light-emitting element mounting portion in which a plurality of wiring portions are separated by predetermined gaps, by removing predetermined portions of the metallic layer, wherein, in the forming the light-emitting element mounting portion, the metallic layer is removed so that one of the pair of electroplating films belongs to one wiring portion of the plurality of wiring portions and another of the pair of electroplating films belongs to another wiring portion adjacent to the one wiring portion.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: January 27, 2015
    Assignee: Shinko Electric Industries Co., Ltd
    Inventors: Kazutaka Kobayashi, Tadashi Arai, Yasuyuki Kimura
  • Publication number: 20150001561
    Abstract: According to one embodiment, a semiconductor light emitting element includes a first electrode, first and second light emitting units, first and second conductive layers, a first connection electrode, a first dielectric layer, first and second pads, and a first inter-light emitting unit dielectric layer. The first light emitting unit includes first and second semiconductor layers, and a first light emitting layer. The first semiconductor layer includes a first semiconductor portion and a second semiconductor portion. The second light emitting unit includes a third semiconductor layer, a fourth semiconductor layer, and a second light emitting layer. The fourth semiconductor layer is electrically connected with the first electrode. The first conductive layer is electrically connected with the third semiconductor layer. The second conductive layer is electrically connected with the second semiconductor layer.
    Type: Application
    Filed: June 26, 2014
    Publication date: January 1, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: HIROSHI KATSUNO, SHINJI SAITO, REI HASHIMOTO, JONGIL HWANG, SHINYA NUNOUE
  • Patent number: 8921875
    Abstract: Light emitting devices include a light emitting diode (“LED”) and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: December 30, 2014
    Assignee: Cree, Inc.
    Inventors: Ronan P. LeToquin, Tao Tong, Robert C. Glass
  • Publication number: 20140374778
    Abstract: An optical assembly configured to emit electromagnetic radiation comprises first and second electroluminescent semiconductor components positioned adjacent to each other. The first electroluminescent semiconductor component is transparent to electromagnetic radiation generated by the second electroluminescent semiconductor component, and the second electroluminescent semiconductor component is transparent to electromagnetic radiation generated by the first electroluminescent semiconductor component. The first electroluminescent semiconductor component and the second electroluminescent semiconductor component are configured to actuate independently of each other.
    Type: Application
    Filed: June 20, 2014
    Publication date: December 25, 2014
    Inventors: Richard Fix, Patrick Sonstroem
  • Patent number: 8916857
    Abstract: A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention.
    Type: Grant
    Filed: November 24, 2012
    Date of Patent: December 23, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Ryoji Nomura
  • Patent number: 8916276
    Abstract: An object of the present invention is to provide a composite material formed of an organic compound and an inorganic compound, and has an excellent carrier transporting property, an excellent carrier injecting property to the organic compound, as well as excellent transparency. A composite material of the present invention for achieving the above object is a composite material of an organic compound represented in the general formula below, and an inorganic compound. For the inorganic compound, an oxide of a transition metal, preferably an oxide of a metal belonging to groups 4 to 8 of the periodic table, in particular vanadium oxide, tantalum oxide, molybdenum oxide, tungsten oxide, rhenium oxide, and ruthenium oxide, can be used.
    Type: Grant
    Filed: January 7, 2013
    Date of Patent: December 23, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuji Iwaki, Satoshi Seo, Daisuke Kumaki
  • Patent number: 8916849
    Abstract: An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound semiconductor material and contains at least one active zone for generating electromagnetic radiation and at least one waveguide layer, which indirectly or directly adjoins the active zone. A waveguide being formed. In addition, the semiconductor layer sequence includes a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone. The waveguide layer indirectly or directly adjoins the cladding layer. An effective refractive index of a mode guided in the waveguide is in this case greater than a refractive index of the carrier.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: December 23, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Christoph Eichler, Teresa Lermer, Adrian Stefan Avramescu
  • Patent number: 8901612
    Abstract: Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: December 2, 2014
    Assignees: Phononic Devices, Inc., The Board of Regents of the University of Oklahoma
    Inventors: Allen L. Gray, Robert Joseph Therrien, Patrick John McCann
  • Publication number: 20140339580
    Abstract: An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
    Type: Application
    Filed: May 16, 2014
    Publication date: November 20, 2014
    Inventors: Yeonjoon Park, Sang Hyouk Choi
  • Patent number: 8890204
    Abstract: To provide a light emitting device in which generation of cross talk between adjacent light emitting elements is suppressed, even when the light emitting device uses a light emitting element having high current efficiency. Also, to provide a light emitting device having high display quality even when the light emitting device uses a light emitting element having high current efficiency. The light emitting device has a pixel portion including a plurality of light emitting elements, wherein each of the plurality of light emitting elements includes a plurality of light emitting bodies provided between a first electrode and a second electrode and a conductive layer formed between the plurality of light emitting bodies, wherein the conductive layer is provided for each light emitting element, and wherein an edge portion of the conductive layer is covered with the plurality of light emitting bodies.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: November 18, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Shunpei Yamazaki
  • Publication number: 20140327021
    Abstract: An LED lighting module includes a support board with a first LED and a second LED thereon. The wavelength of light emitted by the first LED is different from that of light emitted by the second LED. The height of the first LED is different from that of the second LED for preventing the emitting light of the first LED absorbed by the wavelength conversion layer of the second LED.
    Type: Application
    Filed: October 28, 2013
    Publication date: November 6, 2014
    Applicant: Lextar Electronics Corporation
    Inventors: Jian-Jhih LIN, Yi-Ching WANG
  • Patent number: 8878263
    Abstract: Disclosed herein is a semiconductor device including: a semiconductor substrate; a gate insulating film formed on surfaces of the semiconductor substrate including an internal surface of a hole formed in the semiconductor substrate and formed by radical oxidation or plasma oxidation; and a gate electrode formed as buried in the hole. The gate insulating film and the gate electrode form a vertical MOS.
    Type: Grant
    Filed: May 21, 2010
    Date of Patent: November 4, 2014
    Assignee: Sony Corporation
    Inventor: Shuji Manda
  • Patent number: 8865565
    Abstract: A vertical GaN-based blue LED has an n-type GaN layer that was grown directly on Low Resistance Layer (LRL) that in turn was grown over a silicon substrate. In one example, the LRL is a low sheet resistance GaN/AlGaN superlattice having periods that are less than 300 nm thick. Growing the n-type GaN layer on the superlattice reduces lattice defect density in the n-type layer. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form finished LED devices. In some examples, some or all of the LRL remains in the completed LED device such that the LRL also serves a current spreading function. In other examples, the LRL is entirely removed so that no portion of the LRL is present in the completed LED device.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: October 21, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Zhen Chen
  • Patent number: 8866164
    Abstract: A semiconductor light emitting device having a light emitting structure including at least one first conductive GaN based semiconductor layer, an active layer above the at least one first conductive GaN based semiconductor layer, and at least one second conductive GaN based semiconductor layer above the active layer, a plurality of patterns disposed from the at least one second conductive GaN based semiconductor layer through a portion of the at least one first conductive GaN based semiconductor layer, and an insulating member on the plurality of patterns. The plurality of patterns include a lower part contacting with the light emitting structure and a upper part contacting with the light emitting structure. A first base angle of the lower part is different from the second base angle of the upper part.
    Type: Grant
    Filed: April 12, 2010
    Date of Patent: October 21, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 8866173
    Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; an electrode on the light emitting structure; a protection layer under a peripheral region of the light emitting structure; and an electrode layer under the light emitting structure, wherein the protection layer comprises a first layer, a second layer, and a third layer, wherein the first layer comprises a first metallic material, and wherein the second layer is disposed between the first layer and the third layer, the second layer has an insulating material or a conductive material.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: October 21, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Publication number: 20140285088
    Abstract: In at least one embodiment of the LED module (10), said LED module comprises a first LED chip (1) that is based on the AlInGaN material system and designed to emit a first radiation type in the blue spectral range. Furthermore, the LED module (10) comprises at least one second LED chip (2) that is based on the InGaAlP material system and designed to emit a second radiation type in the red spectral range. A conversion element (3) is arranged downstream of at least the first LED chip (1) and designed to convert some of the first radiation into a third radiation type. The conversion element (3) comprises a first and a second luminescent material, the first luminescent material being designed to emit at a shorter wavelength than the second luminescent material. The first luminescent material has an absorption that decreases towards relatively long wavelengths in the long-wave blue spectral range, and the second luminescent material has an absorption maximum in the middle blue spectral range.
    Type: Application
    Filed: October 15, 2012
    Publication date: September 25, 2014
    Inventor: Reiner Windisch
  • Patent number: 8835948
    Abstract: A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.
    Type: Grant
    Filed: April 19, 2012
    Date of Patent: September 16, 2014
    Assignee: Phostek, Inc.
    Inventors: Yuan-Hsiao Chang, Yi-An Lu
  • Patent number: 8823028
    Abstract: A light emitting device including a conductive support substrate; an electrode layer on the conductive support substrate, and including side portions such that a center upper portion of the electrode layer protrudes upward from the conductive support substrate; a protective layer on the side portions of the electrode layer, the protective layer including an insulating material having a higher resistance than that of the electrode layer and a top surface of the protective layer is in line with a top surface of the protruding center upper portion of the electrode layer; and a light emitting structure including a second conductive semiconductor layer on the electrode layer and at least a portion of the protective layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: September 2, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jun Suk Park, Deung Kwan Kim, Han Sin
  • Patent number: 8796673
    Abstract: A semiconducting polymer formed from an insulator polymer and an ionic liquid is disclosed. In at least one embodiment, the semiconducting polymer may be formed from a homogenous blend of two or more insulator polymers and two or more ionic liquids. The homogenous mixture of non-conducting polymers and ionic liquid may be formed as a film of semiconducting polymer with a controllable thickness. The semiconducting polymer may be used in a multitude of different applications, including, but not limited to, storage devices.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: August 5, 2014
    Assignee: United Arab Emirates University
    Inventors: Yousef Haik, Ahmad Ibrahim Ayesh, Mahmood Allawy Mohsin
  • Patent number: 8796702
    Abstract: An organic light emitting display device includes a substrate, a plurality of pixels on the substrate having a first region configured to emit light and a second region configured to transmit external light, a plurality of pixel circuit units, a plurality of first electrodes, a first organic layer on the plurality of first electrodes, a second organic layer on the first organic layer, the second organic layer including an emission layer, a third organic layer on the second organic layer, the third organic layer being positioned in the first region and outside a central portion of the second region, and a second electrode having a first portion only on the third organic layer.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: August 5, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jung-Yeon Kim, Mu-Hyun Kim, Beom-Rak Choi, Un-Cheol Sung
  • Patent number: 8777495
    Abstract: An optical connector includes a printed circuit board (PCB), an optical-electric coupling element, a jumper, and optical fibers. The optical-electric coupling element is attached on the PCB. The jumper is detachably positioned on the optical-electric coupling element. The optical-electric coupling element includes first coupling lenses. The jumper includes a first external sidewall, a second external sidewall, a third external surface, and a fourth external surface. The first external sidewall defines receiving holes. Each optical fiber is received in a respective receiving hole. The third external surface defines a sloped surface extending from the third external surface to the first external sidewall. The third external surface and the sloped surface form an angle therebetween. The fourth external surface defines a cavity. The jumper includes second coupling lenses positioned on a bottom surface of the cavity. Each second coupling lens is aligned with a respective first coupling lens.
    Type: Grant
    Filed: December 27, 2012
    Date of Patent: July 15, 2014
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: I-Thun Lin
  • Patent number: 8766291
    Abstract: The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer—i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: July 1, 2014
    Assignee: The Regents of the University of Michigan
    Inventors: Stephen Forrest, Xiangfei Qi, Michael Slootsky
  • Patent number: 8759851
    Abstract: According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: June 24, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tomonari Shioda, Hung Hung, Jongil Hwang, Taisuke Sato, Naoharu Sugiyama, Shinya Nunoue