Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.

Abstract: A light emitting device package can include first and second frames spaced apart from each other; a package body including a body portion disposed between the first and second frames; a light emitting device including first and second electrode pads; a first through hole in the first frame; a second through hole in the second frame; a conductive material disposed in the first and second through holes; and an intermetallic compound layer disposed between the conductive material and the first frame, and between the conductive material and the second frame, in which the first electrode pad of the light emitting device overlaps with the first through hole in the first frame, the second electrode pad of the light emitting device overlaps with the second through hole in the second frame, and the first and second electrode pads are spaced apart from each other.

Abstract: A photoelectric connector includes a plug and a receptacle. The plug includes a plug housing 200, a first guide pin 220, a first signal transmitting/receiving member 230, a first electrode unit 260, and a plug housing biasing means 250. The receptacle includes a receptacle housing 300, a second signal transmitting/receiving member 330, a second electrode unit 360, and a second signal transmitting/receiving member biasing means 321.

Abstract: A light-emitting device is disclosed. The light emitting device includes a base, a reflective layer formed on the base, a coating layer formed on the reflective layer, a sidewall disposed on the base, the sidewall being arranged to form a reflector cup, and a light-emitting diode (LED) chip disposed in the reflector cup.

Abstract: The invention provides a lighting device (100) comprising a solid state light source (10) configured to provide blue light (11) having a dominant wavelength selected from the range of 440-490 nm, a first luminescent material (210) configured to convert part of the blue light (11) into first luminescent material light (211) having intensity in one or more of the green and yellow having a CIE u? (211), and a second luminescent material (220) configured to convert part of one or more of the blue light (11) and the first luminescent material light (211) into second luminescent material light (221) having intensity in one or more of the orange and red having a CIE u? (221), wherein the first luminescent material (210) and the second luminescent material (220) are selected to provide said first luminescent material light (211) and said second luminescent material light (221) defined by a maximum ratio of CIE u? (211) and CIE u? (221) being CIE u?(221)=1.58*CIE u?(211)+0.

Abstract: A single photon avalanche diode (SPAD) image sensor is disclosed. The SPAD image sensor include: a substrate of a first conductivity type, the substrate having a front surface and a back surface; a deep trench isolation (DTI) extending from the front surface toward the back surface of the substrate, the DTI having a first surface and a second surface opposite to the first surface, the first surface being level with the front surface of the substrate; an epitaxial layer of a second conductivity type opposite to the first conductivity type, the epitaxial layer surrounding sidewalls and the second surface of the DTI; and an implant region of the first conductivity type extending from the front surface to the back surface of the substrate. An associated method for fabricating the SPAD image sensor is also disclosed.

Abstract: A surface light source assembly includes at least one light emitting element, a light guide plate and a reflective sheet. Each of the light emitting elements has an annular light emitting side surface. The light guide plate has a bottom surface and a light exit surface opposite to the bottom surface. The bottom surface has at least one accommodating recess to accommodate at least one light emitting element. Each of the accommodating recesses has a light incident surface. The bottom surface further has a flat portion and at least one inclined surface portion. Each of the inclined surface portions is connected between the flat portion and the light incident surface of the corresponding accommodating recess. The reflective sheet is disposed below the flat portion. A light source module having the surface light source assembly is further provided.

Abstract: A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1> 1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.

Abstract: A light emitting device for a display includes a substrate and first, second, and third LED sub-units, a first transparent electrode between the first and second LED sub-units and in ohmic contact with the first LED sub-unit, a second transparent electrode between the second and third LED sub-units and in ohmic contact with the second LED sub-unit, a third transparent electrode between the second transparent electrode and the third LED sub-unit and in ohmic contact with the third LED sub-unit, at least one current spreader connected to at least one of the first, second, and third LED sub-units, electrode pads disposed on the substrate, and through-hole vias formed through the substrate, in which at least one of the through-hole vias is formed through the substrate and the first and second LED sub-units.

Abstract: A wavelength conversion module, a forming method of a wavelength conversion module, and a projection device are provided. The wavelength conversion module includes a substrate and a plurality of wavelength conversion units. The wavelength conversion units are located on the substrate, wherein the wavelength conversion units include a first wavelength conversion unit and a second wavelength conversion unit, the first wavelength conversion unit includes a first wavelength conversion material and a first doping material, the second wavelength conversion unit includes a second wavelength conversion material and a second doping material, the first wavelength conversion material and the second wavelength conversion material are different from each other, and the first doping material and the second doping material are different from each other. By the wavelength conversion units comprising different doping materials, low cost, good heat resistance and efficient light emitting are achieved.

Abstract: A method of manufacturing a semiconductor light-emitting device includes: preparing a layer stack including a light-extracting layer and a light-emitting structure, the light-extracting layer having a light-extracting surface in which a rugged structure is provided, the light-emitting structure being provided on a principal surface opposite to the light-extracting surface of the light-extracting layer; forming a mask over the rugged structure in a partial region of the light-extracting surface; forming a planar surface by removing the rugged structure that is exposed without having the mask formed thereover; and singulating the layer stack by irradiating the planar surface with a laser and cutting at least the light-extracting layer at a position of the planar surface.

Abstract: Described is a reflector for light emitting devices. A device includes a reflector in contact with a first n-type region and a second n-type region. The reflector includes multiple layers. One layer having an index of refraction different than the other layers. The device includes a light emitting region (LER) in contact with the second n-type region, a p-type region in contact with the LER and a light extraction region (LXR) in contact with the p-type region. A majority of light escapes the device through the LXR. The reflector reflects light emitted by the LER back towards the LXR. In another device, a reflector is embedded in a n-type region of the device. The device includes a LER, a p-type region, and a wavelength converter structure. The reflector reflects light emitted by the wavelength converting structure back towards the wavelength converting structure.

Abstract: The invention concerns a transparent heating device comprising: a graphene film fixed to a transparent substrate; a first electrode (205) connected to a first edge of the graphene film; and a second electrode (206) connected to a second edge of the graphene film, wherein there is a resistance gradient across the graphene film from the first electrode (205) to the second electrode (206).

Abstract: A wavelength-converting film includes a sintered body formed of a mixture of a wavelength-converting material and a glass composition. The wavelength-converting material includes a quantum dot having a core-shell structure and a protective layer coating a surface of the quantum dot. A shell of the quantum dot contains at least one of Zn, S, and Se, the protective layer does not contain S and Se, and the glass composition includes a SnO2—P2O5—SiO2-based composition.

Abstract: Aspects of the disclosure provide a lighting apparatus. The lighting apparatus includes a first light source, a second light source and a reflector. The first light source is configured to emit first light in a first direction. The second light source is configured to emit second light in a second direction with a tilt angle to the first direction. The reflector is configured to have a reflection surface. The reflection surface has a first portion that reflects the first light and a second portion that reflects the second light.

Abstract: A light emitting device and a vehicular lamp are provided. The light emitting device comprises: a first light emitting unit; a second light emitting unit separated from the first light emitting unit; and a sidewall surrounding side surfaces of the first and second light emitting units while adjoining the side surfaces of the first and second light emitting units, wherein the first light emitting unit and the second light emitting unit emit light have different peak wavelengths.

Abstract: A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, first external connecting parts and at least one second external connecting part. The semiconductor layered body includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The first electrode is connected to the first semiconductor layer at exposed parts through openings in the insulating film, and partially arranged on the second semiconductor layer via the insulating film. The first external connecting parts are connected to the first electrode. The first external connecting parts are spaced apart from the exposed parts in a plan view. A group comprising at least one of the first external connecting parts and other group comprising at least one of the first external connecting parts respectively surround adjacent ones of the exposed parts while being spaced apart from each other in the plan view.

Abstract: An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.

Abstract: A semiconductor device includes a substrate having a front surface and a mounting surface that are separate from each other in a thickness direction. The substrate is formed with a through-hole that penetrates through in the thickness direction. A semiconductor element is mounted on the front surface of the substrate, and a front-surface wire line is formed on the front surface of the substrate to be electrically connected to the semiconductor element. A column is provided inside the through-hole, and is electrically connected to the front-surface wiring line. An electrode pad is provided on the mounting surface of the substrate, and is electrically connected to the column. A resin-layer through portion is also provided inside the through-hole. The semiconductor element is covered with a sealing resin. The resin-layer through portion has an orthogonal surface in contact with the column. The orthogonal surface is orthogonal to the mounting surface.

Abstract: An assembly includes a carrier including a glass material, including at least one recess, wherein at least one optoelectronic semiconductor component is arranged in the at least one recess of the carrier, and at least one surface of the semiconductor component connects to the carrier via a melted surface including glass.

Abstract: A display device including a substrate including a light emission area and a non-light emission area, a pixel defining layer disposed in the non-light emission area, the pixel defining layer defining the light emission area, a first electrode disposed in the light emission area, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer, in which the second electrode includes a first metal layer and a second metal layer disposed on the first metal layer, and the second metal layer has an aperture disposed at an edge portion of the light emission area.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: An optical sensor structure is provided. The optical sensor structure includes a sensor pixel array in a substrate, a light collimating layer on the substrate, and at least one through-substrate via. The sensor pixel array has a plurality of sensor pixels. The at least one through-substrate via extends from a first surface to an opposite second surface of the substrate. The at least one through-substrate via is in the sensor pixel array and vertically misaligned with the plurality of sensor pixels.

Abstract: A light-emitting device includes a light-emitting element disposed on a mount substrate, a reflective member disposed around the light-emitting element to cover the light-emitting element, and a dam disposed on opposite sides of the reflective member. The dam includes a resin dam, and a surface layer covering at least part of a surface of the resin dam. The inner lateral surface of the resin dam facing the light-emitting element is covered with the surface layer, and at least part of the outer lateral surface of the resin dam not facing the light-emitting element is an exposed surface.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.

Abstract: A light-emitting component includes at least two radiation-emitting semiconductor chips of a first type configured to emit electromagnetic radiation during operation, and a light exit surface at a light exit side of the light-emitting component, wherein each of the radiation-emitting semiconductor chips of the first type includes a semiconductor layer sequence with a stacking direction, the stacking direction of each radiation-emitting semiconductor chip of the first type is parallel to the light exit surface of the component, and all the semiconductor chips of the first type are arranged directly below the light exit surface.

Abstract: LED structures (e.g., LED arrays) and fabrication methods can reduce or even eliminate deep etching, and associated defect formation, proximate sites of individual LEDs. Such approaches can achieve desired electrical isolation without deep etching, provide a high conductivity current spreading layer, and, or reduce losses otherwise associated with conventional fabrication approaches. Some implementations advantageously lift off or separate an insulating substrate from a wafer to expose a bottom surface of the epitaxial LED layer and forms a backside contact (e.g., ground plane) overlying the bottom surface. Other implementations isolate deep etching away from sensitive regions and locate the backside contact on a top surface of the epitaxial LED layer. Some implementations form light extraction features (e.g., photonic crystals) on the exposed bottom surface. The top surface of the epitaxial LED layer may be undoped to improve electrical isolation.

Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.

Abstract: A method of managing the power dissipated by an electroluminescence light source including electroluminescent rods having submillimeter dimensions protruding from a substrate and split into a plurality of identical groups. By using the measures of the invention, it becomes possible to manage the dissipation of power from the light source when faced with instantaneous variations in the strength of the electric current that powers the latter.

Abstract: The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.

Abstract: Provided herein is a display apparatus including a light emitting diode and a lens for diffusing light generated from the light emitting diode. The lens includes a first emitting portion forming a first emitting surface, and a second emitting portion protruding from the first emitting portion and forming a second emitting surface, so that the light may be diffused by a protruding distance of the second emitting portion.

Abstract: A light emitting device for a display includes a substrate and first, second, and third LED sub-units, a first transparent electrode between the first and second LED sub-units and in ohmic contact with the first LED sub-unit, a second transparent electrode between the second and third LED sub-units and in ohmic contact with the second LED sub-unit, a third transparent electrode between the second transparent electrode and the third LED sub-unit and in ohmic contact with the third LED sub-unit, at least one current spreader connected to at least one of the first, second, and third LED sub-units, electrode pads disposed on the substrate, and through-hole vias formed through the substrate, in which at least one of the through-hole vias is formed through the substrate and the first and second LED sub-units.

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a magnetic layer on the light-emitting structure. The magnetic layer may have at least one magnetization direction that is parallel to an upper surface of the active layer. The magnetic layer may generate a magnetic field that is parallel to the upper surface of the active layer. The magnetic layer may include multiple structures that may have different magnetization directions. Multiple magnetic layers may be included on the light-emitting structure. A magnetic layer may be on a contact electrode. A magnetic layer may be isolated from a pad electrode.

Abstract: A light emitting device of an embodiment comprises: a lower electrode; a light emitting structure disposed on the lower electrode and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an upper electrode pad disposed on the light emitting structure; at least one branch electrode connected to the upper electrode pad; and an upper ohmic layer disposed below the at least one branch electrode, wherein the upper electrode pad may include at least one connecting electrode connected to at least one branch electrode, and at least one connecting electrode may be integrally formed with the upper electrode pad and may project at certain intervals from a side surface of the upper electrode pad.

Abstract: A package structure includes a substrate and a semiconductor die formed over the substrate. The package structure also includes a package layer covering the semiconductor die and a conductive structure formed in the package layer. The package structure includes a first insulating layer formed on the conductive structure, and the first insulating layer includes monovalent metal oxide. A second insulating layer is formed between the first insulating layer and the package layer. The second insulating layer includes monovalent metal oxide, and a weight ratio of the monovalent metal oxide in the second insulating layer is greater than a weight ratio of the monovalent metal oxide in first insulating layer.

Abstract: A method for manufacturing a light-emitting module includes: firstly, attaching a semiconductor structure on a first supporting substrate, the semiconductor structure including a bottom layer and a plurality of light-emitting chips disposed on the bottom layer; next, separating the bottom layer from the semiconductor structure, the light-emitting chips being borne on the first supporting substrate; then, attaching the first supporting substrate with the light-emitting chips on a second supporting substrate; subsequently, separating the first supporting substrate from each light-emitting chip, each light-emitting chip having at least two lands exposed to exterior; next, separating each light-emitting chip from the second supporting substrate; and then disposing each light-emitting chip on a circuit board. Therefore, the light-emitting module is finished by the above-mentioned steps.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Abstract: An optoelectronic semiconductor component is disclosed. In an embodiment a component includes a housing having a recess, a first semiconductor chip for generating light of a first color and a second semiconductor chip for generating light of a second color which is different from the first color, wherein, during operation, a mixed radiation including at least the light of the first color is emitted along a main emission direction, wherein the first semiconductor chip is arranged in a first plane and the second semiconductor chip is arranged in a second plane in the recess, the planes following one another along the main emission direction, wherein active zones of the first and second semiconductor chips are arranged side by side to one another, and wherein at least one electrical connection surface of the first semiconductor chip forms a part of a mounting surface of the semiconductor component.

Abstract: A package is manufactured by placing a substrate (10), for example a lead frame, in a mold (30) with a protection flange (38) extending into a notch (14) in the substrate (10) around a contact surface (12). The protection flange (38) impedes molding compound from reaching the contact surface reducing the need for a deflash step.

Abstract: Proposed is a light source comprising: a plurality of LED light sources, each of the plurality of LED light sources having: a semiconductor diode structure adapted to generate light; and a light output section above the semiconductor diode structure adapted to output light from the semiconductor diode structure, the area of the light output section being less than the area of the semiconductor diode structure; and an optically transmissive structure overlapping the light output sections of the plurality of LED light sources so as to receive light from the light output sections of the plurality of LED light sources and having a light exit section adapted to output the received light. The area of the light exit section of the optically transmissive structure is less than the footprint area of the plurality of LED light sources.

Abstract: An organic light-emitting display device includes: first and second pixel electrodes (PEs); a pixel-defining layer (PDL) disposed on the first and second PEs, the pixel-defining layer including first and second openings respectively exposing the first and second PEs; first and second intermediate layers (ILs) respectively disposed on the first and second PEs exposed via the first and second openings, each of the first and second ILs including an emission layer; first and second opposite electrodes (OEs) respectively disposed on the first and second ILs, the first and second OEs having an island-shaped pattern; first and second protective layers (PLs) respectively disposed on the first and second OEs, the first and second PLs having an island-shaped pattern; and a connection layer disposed on the first and second PLs, the connection layer electrically connecting the first and second OEs to one another.

Abstract: Provided is a light emitting device capable of further improving light extraction efficiency while reducing leakage of wavelength unconverted light or color unevenness of the light. The light emitting device includes: a base member; a light emitting element mounted on the base member; a light reflecting member disposed at a side surface side of the light emitting element; and a light-transmissive stacked layer covering at least an upper surface of the light emitting element, wherein the light-transmissive stacked layer includes a first light-transmissive layer, a first wavelength conversion layer disposed on the first light-transmissive layer, a second light-transmissive layer disposed on the first wavelength conversion layer, and a second wavelength conversion layer disposed on the second light-transmissive layer.

Abstract: An LED chip includes a carrier, a semiconductor layer sequence, a reflective layer sequence arranged in regions between the carrier and the semiconductor layer sequence, wherein the reflective layer sequence includes a dielectric layer facing the semiconductor layer sequence and a metallic mirror layer facing away from the semiconductor layer sequence, and an encapsulating layer arranged in places between the carrier and the reflective layer sequence, the encapsulating layer extending in places through the reflective layer sequence into the semiconductor layer sequence and thus forming a separating web separating an inner region of the reflective layer sequence from an edge region of the reflective layer sequence.

Abstract: A light-emitting device includes a light-emitting element that includes a layered structure including a semiconductor layer and a pair of electrodes on a first main surface of the layered structure, a light-transmissive member on a second main surface of the layered structure, the second main surface being opposite to the first main surface, a covering member covering lateral surfaces of the light-emitting element and the first main surface of the layered structure except for at least part of the pair of electrodes, a pair of first metal layers on the first main surface of the light-emitting element, the pair of first metal layers covering a surface of the covering member and being respectively connected with the pair of electrodes, and at least one second metal layer separated from the first metal layers.

Abstract: Emitter packages are disclosed that can include an insulating layer covering the emitter, such as between the emitter's primary emission surface and a lens or encapsulant. The packages can comprise a submount with an emitter flip-chip mounted such that the diode region is between the emitter's non-insulating and/or conductive substrate and the submount. The submount can then be covered with a thin insulating layer. The same or another insulating layer can cover other electrically active surfaces on the submount. By insulating the electrically active surfaces of the emitter and, in some embodiments, other electrically active surfaces, the package can meet UL8750 class 4 enclosure standards even if it does not meet the lens adhesion criteria. This can enable the use of cheaper and/or more optically efficient materials at the fixture level, since the package itself meets class 4 standards.

Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.

Abstract: A lamp includes blue-pumped solid state light emitters (SSLEs) and violet-pumped SSLEs. Each blue-pumped SSLE has a blue excitation source configured to output blue light, and blue-pumped phosphors for converting a portion of the blue light to non-blue visible light, for the blue-pumped SSLEs to output blue-pumped white light. Each violet-pumped SSLE has a violet excitation source configured to output violet light, and violet-pumped phosphors for converting a portion of the violet light to non-violet visible light, for the one or more violet-pumped SSLEs to output violet-pumped white light. A support structure fixedly supports the blue-pumped SSLEs and the violet-pumped SSLEs in an orientation such that the blue-pumped white light and the violet-pumped white light will propagate in a common direction and intermix with each other through beam-spreading to yield a combined white light.

Abstract: A light-emitting diode includes an optoelectronic semiconductor chip that emits electromagnetic radiation through a radiation side along a main direction of emission running transversely to the radiation side during operation, the semiconductor chip is embedded in a solid body, wherein side surfaces and the radiation side are covered by the solid body in a form-fit manner, the solid body widens along the main direction of emission, a cover element is arranged downstream of the solid body in the main direction of emission and is applied directly onto the solid body, a side of a cover element facing away from the solid body is formed as a radiation exit surface of the light-emitting diode, and a first contact element is exposed in an unmounted and/or non-contacted state of the light-emitting diode.

Abstract: A semiconductor chip structure includes a substrate having a top surface, a bottom surface, and a lateral surface connecting the top surface and the bottom surface. The lateral surface includes a first portion having a first surface roughness and being in proximity to the top surface, and a second portion having a second surface roughness and being in proximity to the bottom surface. The first surface roughness is greater than the second surface roughness. A method for manufacturing the semiconductor chip structure is also provided.

Abstract: A moving-body light-emitting device for a vehicle includes: a light source including a light-emitting element; a substrate on which the light source is provided; a first lens that covers the light-emitting element and includes a curved surface that transmits light emitted from the light-emitting element, the curved surface including a first curved surface and a second curved surface; and a reflective surface that covers the first curved surface of the first lens and reflects the light transmitted through the first lens. The second curved surface of the first lens is not covered with the reflective surface, and transmits the light reflected by the reflective surface.