Abstract: A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material.

Abstract: A lighting device disclosed in an embodiment of the invention includes: a first substrate; a first light emitting device disposed on the first substrate; a resin layer disposed on the first substrate; a second substrate disposed on the resin layer; and a second light emitting device disposed on the second substrate and disposed in the resin layer. The resin layer may include a first surface from which light emitted from the first and second light emitting devices is emitted, and the first surface of the resin layer may include a plurality of convex portions and a plurality of concave portions.

Abstract: A light-emitting package, includes: a housing including an opening; a lead frame covered by the housing; a light-emitting device, mounted in the opening and electrically connected to the lead frame, the light-emitting device including: a substrate including: a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; a semiconductor stack on the main surface, the semiconductor stack including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area not covered by the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon; and a filling material filling in the opening and covering the light-emitting device.

Abstract: A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.

Abstract: Optoelectronic devices that include a composite film in a multilayered encapsulation stack are provided. Also provided are methods of forming the light reflection-modifying structures, as well as other polymeric device layers, using inkjet printing. The composite films include a first, lower refractive index domain and a second, higher refractive index domain.

Abstract: An organic semiconductor device with low driving voltage is provided. The organic semiconductor device includes a layer containing an organic compound between a pair of electrodes. The layer containing an organic compound includes a hole-transport region. The hole-transport region includes a first layer and a second layer. The first layer is positioned between the anode and the second layer. When a potential gradient of a surface potential of an evaporated film is set as GSP (mV/nm), a value obtained by subtracting GSP of an organic compound in the second layer from GSP of an organic compound in the first layer is less than or equal to 20 (mV/nm).

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

Abstract: Provided is a component arrangement, including a carrier substrate; a spacer which is arranged on the carrier substrate so as to surround an installation space and has an outlet opening on a side facing away from the carrier substrate; an optical component arranged in the installation space; a contact connection which electrically conductively connects the optical component to external contacts arranged outside the installation space; a cover substrate which is arranged on the spacer and with which the outlet opening is covered in a light-permeable manner; and a light-reflecting surface which is formed on an anisotropically etched silicon component and is arranged in the installation space as an inclined surface at an angle of approx.

Abstract: A light emitting diode is provided having a LED layer configured to emit pump light having a pump light wavelength from a light emitting surface, the LED layer comprising a plurality of Group III-nitride layers. A container layer is provided on the light emitting surface of the LED layer, the container surface including an opening defining a container volume through the container layer to the light emitting surface of the LED layer. A colour converting layer is provided in the container volume, the colour converting Got layer configured to absorb pump light and emit converted light of a converted light wavelength longer than the pump light wavelength. A lens is provided on the container surface over the opening, the lens having a convex surface on an opposite side of the lens to the colour converting layer. A pump light reflector laminate provided over the convex surface of the lens the pump light reflector laminate having a stop-band configured to reflect the pump light centred on a first wavelength.

Abstract: A flip-chip light-emitting diode includes an epitaxial structure including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order. The epitaxial structure is formed with first holes and second holes respectively at a first region and a second region that are independent from each other. Each of the first and second holes extends through the second semiconductor layer and the active layer, and partially exposes the first semiconductor layer. A surface of the first semiconductor layer exposed by the first holes has a total area smaller than a total area of a surface of the first semiconductor layer exposed by the second holes.

Abstract: A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Abstract: A printed circuit board according to an embodiment includes a first insulating layer; a second insulating layer disposed on the first insulating layer and including a cavity; and a pad disposed on the first insulating layer and exposed through the cavity; wherein the second insulating layer includes a first portion disposed on an upper surface of the first insulating layer in a region where the cavity is formed; and a second portion other than the first portion, and wherein a thickness of the first portion is smaller than a thickness of the second portion.

Abstract: A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design.

Abstract: A display device is disclosed, which may reduce an interval between subpixels and maximize a light emission area. The display device comprises a substrate provided with a first subpixel and a second subpixel arranged to adjoin the first subpixel, a first electrode provided in each of the first subpixel and the second subpixel on the substrate, including a first material, and an oxide insulating film provided to cover at least a portion of a side of the first electrode and made of a second material. The first material is a metal material, and the second material is an oxide of the first material.

Abstract: A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.

Abstract: A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The present invention provides a light emitting panel, which includes: a substrate, at least one light emitting element disposed on the substrate, and a reflective structure layer. The reflective structure layer includes a plurality of first microstructure units disposed on the substrate and distributed around the at least one light emitting element, and a plurality of second microstructure units disposed on and overlapping the first microstructure units. A spacing between adjacent first microstructure units among the first microstructure units is less than a spacing between adjacent second microstructure units among the second microstructure units.

Abstract: The present disclosure relates to an LED epitaxial structure and a manufacturing method therefor, a light emitting device and a display panel. The LED epitaxial structure includes: a substrate, an N-type confinement layer, an active layer and a P-type confinement layer, which are disposed in sequence from bottom to top, wherein the active layer includes quantum well layers and quantum barrier layers, which are alternately disposed, a part of the quantum barrier layers are first quantum barrier layers, at least one of the quantum barrier layers is a second quantum barrier layer, the second quantum barrier layer is located between two first quantum barrier layers, and a thickness of the second quantum barrier layers is greater than a thickness of the first quantum barrier layers.

Abstract: A method of manufacturing a light emitting device including: providing an intermediate structure including an light emitting element and a support body; securing a plate-shaped intermediate resin member and the light emitting element with a light-transmissive member such that the intermediate resin member includes first resin extended portions extending outwardly in the first direction respectively from both short sides of the light emitting element in a plan view; cutting the intermediate resin member at cutting positions along the second direction to obtain a resin member with a concave lower surface, a maximum distance from the light emitting element to a respective one of the cutting positions in the first direction being longer than a maximum length of the light emitting element in the second direction; and forming a covering member to cover lateral surfaces of the resin member such that an upper surface of the resin member is exposed.

Abstract: A light emitting device includes: a first light emitting element that comprises a pair of first electrodes; a second light emitting element that comprises a pair of second electrodes; a covering member that integrally covers the first and second light emitting elements such that lower surfaces of the pair of first electrodes and lower surfaces of the pair of second electrodes are exposed from a lower surface of the covering member; a pair of first external connection electrodes, each comprising: a first portion that covers the lower surface of a respective first electrode, and a second portion that covers a portion of the lower surface of the covering member; and a pair of second external connection electrodes, each comprising: a first portion that covers the lower surface of a respective second electrode, and a second portion that covers a portion of the lower surface of the covering member.

Abstract: An electromagnetic radiation emitting device and a method for applying a converter layer to an electromagnetic radiation emitting device are disclosed. In an embodiment, a method includes applying converter elements to a surface of a carrier, applying the converter elements to an electromagnetic radiation emitting device by applying the carrier to the electromagnetic radiation emitting device such that the surface of the carrier with the applied converter elements faces the electromagnetic radiation emitting device and forming a converter layer on the electromagnetic radiation emitting device by depositing a plurality of thin layers on the converter elements using an atomic layer deposition process.

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

Abstract: An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with a local maximum peak on the longest wavelength side of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power.

Abstract: Disclosed is a small-size vertical-type light emitting diode chip with high luminous in a central region. A PN junction structure is arranged on a light emitting region base of an interface structure, the interface structure is provided with a P-type Ohmic contact area at the light emitting region base, a central area of the PN junction structure is above the P-type Ohmic contact area, an insulating layer is formed on an extending platform adjacent to the light emitting region base and extends to cover an N-type semiconductor of the PN junction structure to form a border covering region surrounding the N-type semiconductor, an N-type Ohmic contact electrode covers the border covering region, and an N-type electrode pad is arranged on the insulating layer and electrically connected with the N-type Ohmic contact electrode via a bridging connected metal layer.

Abstract: An electronic device includes a first substrate, a circuit layer, a conductive wire, and an adhesive layer. The first substrate has a first surface, a second surface and a first side surface. The second surface is opposite to the first surface, the first side surface is located between the first surface and the second surface, and the first side surface connects the first surface and the second surface. The circuit layer is disposed on the first surface of the first substrate. The conductive wire is electrically connected to the circuit layer. The adhesive layer is disposed on the first surface and the circuit layer. The adhesive layer has a second side surface, and a first portion of the conductive wire is disposed on the first side surface of the first substrate and the second side surface of the adhesive layer.

Abstract: An LED package includes a light source, a light transmissive member, and a light reflecting layer. The light source includes a resin package, a light emitting element and a wavelength conversion material. The resin package includes first and second leads and a resin member. The resin package defines a recess having a bottom face defined by portions of the first and second leads, and a portion of the resin member, and a lateral wall defined by a portion of the resin member. The light emitting element is disposed on or above the bottom face in the recess. The wavelength conversion material is disposed in the recess. The light transmissive member is disposed on or above the light source. The light reflecting layer is disposed on or above the light transmissive member at least on an upper side along an optical axis of the light emitting element.

Abstract: Light emitting diodes, components, and related methods, with improved performance over existing light emitting diodes. In some embodiments, light emitter devices included herein include a submount, a light emitter, a light affecting material, and a wavelength conversion component. Wavelength conversion components provided herein include a transparent substrate having an upper surface and a lower surface, and a phosphor compound disposed on the upper surface or lower surface, wherein the wavelength conversion component is configured to alter a wavelength of a light emitted from a light source when positioned proximate to the light source.

Abstract: The invention provides a LED filament device (1000) configured to generate LED filament device light (1001), wherein the LED filament device (1000) comprises a LED filament (1100), wherein the LED filament (1100) comprises a plurality of light generating devices (100), each comprising a solid state light source (10), wherein the plurality of light generating devices (100) comprises a first set of n1 first light generating devices (110) configured to generate red first device light (111), a second set of n2 second light generating devices (120) configured to generate blue second device light (121), and a third set of n3 third light generating devices (130) configured to generate green third device light (131), wherein at least part of a total number n2 of the second light generating devices (120) of the second set are configured neighboring to first light generating devices (110) of the first set, wherein at least part of a total number n3 of the third light generating devices (130) of the third set are config

Abstract: A light emitting module includes a substrate; at least one light emitting device each including: at least one light emitting element each including: a semiconductor layered structure having a lower surface, an upper surface, and lateral surfaces, and electrodes on the lower surface of the semiconductor layered structure; a light-reflecting part having a lower surface and covering at least the lateral surfaces and the lower surface of the semiconductor layered structure, at least one recessed portion being formed in the lower surface of the light-reflecting part; and a light-transmitting part located over the light-reflecting part and covering an upper surface side of the semiconductor layered structure; an electrically conductive bonding member configured to bond the substrate and the electrodes of each of the at least one light emitting device; and a covering resin spaced apart from the light-transmitting part and disposed at least in the at least one recessed portion and around at least one of the at least

Abstract: A display device includes: a substrate; a first electrode on the substrate; a bank layer on the first electrode; an organic light-emitting layer on the first electrode; a second electrode on the organic light-emitting layer and the bank layer; a high-refractive lens on the second electrode and having a refractive index higher than a refractive index of a material that overlaps the first electrode and contacts a side surface of the high-refractive lens; a display panel including an encapsulation member that is on the high-refractive lens; and an optical path adjustment film on the display panel. The optical path adjustment film includes a plurality of protruding patterns on the encapsulation member and a cover layer in spaces between adjacent protruding patterns from among the plurality of protruding patterns. A refractive index of each of the protruding patterns is smaller than a refractive index of the cover layer.

Abstract: A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) chip may include a VCSEL array including plurality of VCSELs and an integrated optical element including a plurality of lens segments. The integrated optical element may direct beams provided by the plurality of VCSELs to a particular range of angles to create a diffusion pattern using the beams provided by the plurality of VCSELs. A surface of a first lens segment may be sloped to cause a beam from a first VCSEL to be steered at a first angle and a surface of a second (adjacent) lens segment may be sloped to cause a beam from a second VCSEL to be steered at a second angle. A direction of the second angle with respect to a surface of the VCSEL array may be opposite to a direction of the first angle with respect to the surface of the VCSEL array.

Abstract: Provided is a semiconductor light-emitting element that exhibits a light emission spectrum in which a single peak is obtained by controlling multi peaks. In the semiconductor light-emitting element having a second conductivity type cladding layer on the light extraction side, the arithmetic mean roughness Ra of a surface of the light extraction surface of the second conductivity type cladding layer is 0.07 ?m or more and 0.7 ?m or less, and the skewness Rsk of the surface is a positive value.

Abstract: Provided is a light engine of a lamp. The light engine includes a number of light engine modules, and a support frame for movably mounting the light engine modules, where each light engine module comprises one or more light sources. The support frame includes a number of movable components, the movable components of the support frame are mechanically engaged to the light engine modules, such that mechanical motion of the movable components of the support frame relative to each other can cause the motion of the light engine modules relative to each other. In addition, a lamp with a light engine is provided.

Abstract: A display device includes: first electrodes formed to be arranged in a two-dimensional matrix on a substrate; a partition wall part provided between the first electrodes adjacent to each other and having a cross-sectional shape whose width decreases as it moves away from the substrate; an organic layer formed on an entire surface including surfaces of the first electrodes and the partition wall parts and formed by laminating a plurality of material layers; and a second electrode formed on an entire surface including a surface of the organic layer, in which among the plurality of material layers constituting the organic layer, a material layer arranged closest to the second electrode side is formed such that a resistance of a portion located on a slope of the partition wall part is higher than a resistance of a portion located on the first electrode.

Abstract: A light-emitting assembly with improved illumination includes a first substrate, a light guide layer, light emitters, a touch sensor, a first reflective layer, and a second reflective layer. The first substrate defines a light-transmitting area. The light emitters are in the light guide layer. The light emitters emit light to illuminate the light-transmitting area. The touch sensor is opposite to the light-transmitting area. The first reflective layer is between the first substrate and the light guide layer and defines an opening aligned with the light-transmitting area. The second reflective layer is on a side of the light guide layer away from the first substrate. An electronic device using the light-emitting assembly and a method for making the light-emitting assembly are also disclosed.

Abstract: A display device can include a wiring substrate including a first electrode, a plurality of semiconductor light-emitting elements electrically connected to the first electrode, a conductive adhesive layer on the wiring substrate and around the plurality of semiconductor light-emitting elements, an upper layer on one surface of the conductive adhesive layer and including a plurality of through holes corresponding to the plurality of semiconductor light-emitting elements, respectively, and a second electrode on the upper layer and electrically connected to the plurality of semiconductor light-emitting elements. The upper layer can include a thermosetting adhesive.

Abstract: A light emitting device includes an LED having a light emitting top surface and sidewalls. A phosphor structure is attached to the light emitting surface of the LED. The phosphor structure has a light emitting top surface facing away from the LED light emitting surface, and sidewalls. A light reflective material is arranged to cover the sidewalls of the LED and the phosphor structure. A light absorptive region is defined in the light reflective material around a perimeter of the light emitting surface of the phosphor structure. The light absorptive region may be spaced apart from the perimeter of the phosphor structure by a gap. The light absorptive region may be formed by ultraviolet laser illumination of the light reflecting material.

Abstract: A light emitting device includes a light emitting element having an upper emission face, a lower face and a lateral face(s); a reflecting member having an upper face, a lower face and inner and outer lateral faces, wherein the inner lateral face(s) is disposed on the lateral face side of the light emitting element; a wavelength conversion member having an upper emission face, a lower face and a lateral face(s), wherein the lower face is disposed on the upper emission face of the light emitting element and on the upper face of reflecting member; and a cover member having inner and outer lateral faces, wherein the inner lateral face(s) completely covers the lateral face(s) of the wavelength conversion member. The cover member contains a reflecting substance and a coloring substance, and the body color of the wavelength conversion member and body color of the cover member are the same or similar in color.

Abstract: A micro light emitting diode chip including a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first-type electrode, and a second-type electrode is provided. The first-type semiconductor layer has a first high-concentration doping region and a first low-concentration doping region. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first-type electrode is directly contacted and electrically connected to the first high-concentration doping region. The second-type electrode is electrically connected to the second-type semiconductor layer.

Abstract: A light emitting device including a substrate having a first region and a second region, a light emitting stack including vertically stacked semiconductor layers disposed on the first region of the substrate, at least one pillar disposed on the second region of the substrate and laterally spaced apart from the light emitting stack, and at least one electrode extending from the first region to the second region of the substrate and electrically connecting the light emitting stack to the at least one pillar, in which the at least one pillar is disposed on the at least one electrode, respectively.

Abstract: An optoelectronic semiconductor device may include a carrier having a roughened first main surface and optoelectronic semiconductor chips arranged over the roughened first main surface. The combined surface area of the optoelectronic semiconductor chips is smaller than the surface area of the carrier, and a part of the roughened first main surface is arranged between adjacent optoelectronic semiconductor chips.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

Abstract: A method for the time-differentiated detection of a spectrum of a test object comprises providing a first conversion dye, which is configured to convert light with a first spectral distribution in the visible range into light with a second spectral distribution in the infrared range. The first conversion dye is excited with a light pulse in the range of the first spectral distribution during a first time period, and a light fraction, reflected or transmitted by the test object, in the range of the first spectral distribution is registered during a first time interval. During a subsequent second time period, a fraction of converted light reflected or transmitted by the test object is registered. According to the invention, the first time interval is selected so that it lies substantially inside a luminescence lifetime for the first conversion dye in the first time period.

Abstract: Discussed is a display device, including a substrate including a dielectric layer, a plurality of semiconductor light-emitting devices respectively accommodated on the substrate, and a first electrode provided with a plurality of electrode lines arranged on a bottom of the substrate. Each of the first electrode includes a pair of electrode lines spaced from each other on an upper surface of the dielectric layer among the plurality of electrode lines. Each semiconductor light-emitting device is disposed on the pair of electrode lines, and the pair of electrode lines have the same electrical pole.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted substantially vertically upward through each of the LED structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: The invention is a small-sized vertical light emitting diode chip with high energy efficiency, wherein a PN junction structure is arranged on a light-emitting region platform of an interface structure; a highly reflective metal layer is arranged under the light-emitting region platform; the interface structure is provided with a P-type ohmic contact area under an outwardly extending platform adjacent to the light-emitting region platform; an insulating layer is formed on the outwardly extending platform; an N-type ohmic contact electrode is in ohmic contact with the PN junction structure and covers the border covering region at a position opposite to the outwardly extending platform; the current conduction is achieved diagonally on the opposite sides by locally diagonally symmetric geometric positioning of the N-type ohmic contact electrode and the P-type ohmic contact area.

Abstract: Embodiment of the present application provide a liquid crystal display panel and a display device. In the liquid crystal display panel provided by the embodiments of the present application, by providing a protection film covering the edge area of the top surface of the color resist block in the test area of the first substrate, the phenomenon that the ions in the color resist block diffuse into the liquid crystal layer caused by the damage or missing of the second passivation layer can be prevented, thus solving the technical problem of blackening of the edge area of the liquid crystal display panel, and improving the display quality of the liquid crystal display panel.

Abstract: A light-emitting device includes: a light-emitting element; a light conversion layer disposed on a light exit side of the light-emitting element and including a first portion and a second portion located on a side of the first portion in a first direction; a first material layer disposed between the light-emitting element and the light conversion layer and configured such that light emitted by the light-emitting element is incident into the light conversion layer; and a second material layer on a side of the first material layer in the first direction, a third material layer on a side face of the light conversion layer, and a fourth material layer on a side of the light conversion layer away from the light-emitting element, which are configured such that light unconverted by the light conversion layer is reflected on surfaces of a structure formed by the second, third and fourth material layers.

Abstract: A display device includes a circuit substrate, a light emitting diode, an encapsulation layer, a color conversion layer and a first optical structure. The light emitting diode is located on the circuit substrate. The encapsulation layer covers the light emitting diode. The color conversion layer overlaps the light emitting diode. The first optical structure overlaps the color conversion layer and is located between the encapsulation layer and the color conversion layer. The first optical structure includes first gaps periodically arranged with a first pitch on a first direction. The width of each first gap in the first direction is 1 micrometer to 10 micrometers. A refractive index of a material of the first optical structure is greater than a refractive index of a material of the encapsulation layer.