Abstract: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Abstract: A novel organic compound is provided. That is, a novel organic compound that is effective in improving the element characteristics and reliability is provided. The organic compound has a benzofuropyrimidine skeleton or a benzothienopyrimidine skeleton and is represented by General Formula (G1). Note that in General Formula (G1), Q represents oxygen or sulfur; ? represents a substituted or unsubstituted arylene group having 6 to 13 carbon atoms; n represents an integer of 0 to 4; A1 represents a group including an aryl group or a heteroaryl group and having 6 to 100 carbon atoms; R1 to R4 independently represent any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 7 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 13 carbon atoms; and A2 represents a condensed ring.

Abstract: A display apparatus includes a liquid crystal panel; and a backlight unit configured to provide light to the liquid crystal panel, wherein the backlight unit includes: a substrate; and a plurality of light emitting diode groups provided on an upper surface of the substrate, wherein each of the plurality of light emitting diode groups includes a red light emitting diode, a green light emitting diode, and a blue light emitting diode, wherein each of the red light emitting diode, the green light emitting diode, and the blue light emitting diode includes: a light emitting layer; and a distributed Bragg reflector (DBR) provided on the light emitting layer, and wherein reflectivities of the distributed Bragg reflectors of the red light emitting diode, the green light emitting diode, and the blue light emitting diode are within a same range of reflectivity according to an incident angle of light incident on the distributed Bragg reflectors.

Abstract: A semiconductor laser device A1 comprises a semiconductor laser chip 2 and a stem 1. The stem 1 includes a base 11 and leads 3A, 3B, and 3C fixed to the base, and supports the semiconductor laser chip 2. The semiconductor laser device A1 further comprises a first metal layer 15 including a first layer 151 covering the base 11 and the leads 3A, 3B, and 3C, a second layer 152 interposed between the first layer 151 and each of the base 11 and the leads 3A, 3B, and 3C, and a third layer 153 interposed between the second layer 152 and each of the base 11 and the leads 3A, 3B, and 3C. Crystal grains in the second layer 152 are smaller than crystal grains in the third layer 153. Such a configuration can suppress corrosion.

Abstract: A nitride near-infrared fluorescent material has a general molecular formula of the nitride near-infrared fluorescent material is (Ca1?x?y?zSrxBayEuz)3[LiaMgbAlcSid]N6. In the general molecular formula, 0?x<1; 0?y?0.3; 0<z?0.02; 3.4?a?4; 0?b?0.2; 0?c?0.4; 1.8?d?2; a+2b+3c+4d=12. The material can be adjusted and controlled to achieve a maximum emission peak wavelength of 830 nm, a maximum half-peak width of 4283 cm?1, and a quantum yield of 77%.

Abstract: A power module substrate 10 is provided with: an insulating substrate 1; and a metal sheet 2 that is joined to the insulating substrate 1 via a brazing material 3, wherein regarding the surface roughness, in the thickness direction, of the lateral surface of the metal sheet 2, the surface roughness of a corner 2a farthest from the center of the metal sheet 2 is larger than the surface roughness of plane parts 2b, which bound the corner, in at least a plan view. Also provided is a power module 100 which is formed by mounting an electronic component 40 on this power module substrate 10.

Abstract: A light emitting device includes: a base including: a first lead including: a first A surface, a first B surface opposite to the first A surface, and a first C surface located between the first A surface and the first B surface and defining at least one first protrusion, a second lead separated from the first lead, and a resin body covering the first C surface and holding the first lead and the second lead; a light emitting element disposed on the first A surface; and a protecting member disposed continuously on at least a portion of the first A surface and in at least a portion of a gap between the first protrusion and the resin body. In a cross-sectional view, the first protrusion extends from a first end portion of the first A surface at a second lead side toward the second lead.

Abstract: Provided is a display device. The display device includes a substrate, a light emitting diode that is disposed on the substrate, and includes a pixel electrode, a common electrode, and an emission layer disposed between the pixel electrode and the common electrode; an encapsulation layer that is disposed on the light emitting diode, a touch electrode that is disposed on the encapsulation layer, a light blocking portion that is disposed on the touch electrode, a color filter layer that overlaps the emission layer, and a planarization layer that is disposed on the light blocking portion and the color filter layer, wherein the color filter layer is disposed on the encapsulation layer and the light blocking portion, and an edge portion of the color filter layer overlaps the light blocking portion.

Abstract: A light emitting diode having an improved heat dissipation effect includes a light source unit emitting a light to a front surface and including a light emitting part, a first electrode pad, and a second electrode pad. The light emitting diode further includes a lead frame unit disposed on a rear surface of the light source unit and including first and second lead terminals respectively connected to the first and second electrode pads. The light emitting diode also includes at least one of the first and second lead terminals includes an upper conductive layer, an intermediate conductive layer, and a lower conductive layer which are disposed on different layers and electrically connected to one another.

Abstract: A micro light emitting diode display includes a substrate, an electrode layer disposed on the substrate, a micro light emitting diode device disposed on the electrode layer, a metal layer disposed on the substrate and connected to the electrode layer, and first and second encapsulation layers. The substrate has an air passage extending to opposite surfaces thereof. The first encapsulation layer wraps the micro light emitting diode device. The second encapsulation layer covers the metal layer and has a material different from that of the first encapsulation layer. The metal layer has a visible area in a display region of the substrate that is not covered by the micro light emitting diode device. A part of the visible area is covered by the second encapsulation layer, and a proportion of the part to the visible area is equal to or greater than 60%.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted substantially vertically upward through each of the LED structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: An electroluminescent display device includes a substrate having an emission region and a bezel region, a bank layer that extends from the emission region to the bezel region, a plurality of signal lines which are disposed on different layers on the substrate, a first metal layer that overlaps the plurality of signal lines and has a step, a second metal layer that is disposed on the first metal layer, and an intermediate layer between the first and second metal layer. A step or curvature above the first electrode may be offset by the first intermediate layer so that incident from the outside is inwardly reflected. Therefore, a failure that a user at the outside recognizes the reflected light may be solved.

Abstract: A display device includes a light-emitting layer and a red converting layer, the red converting layer includes a binder resin, red luminescent bodies, and In nanoparticles, each of the In nanoparticles includes a core and a silica shell, and the silica shell includes blue luminescent bodies emitting light having a wavelength shorter than that of red luminescent bodies.

Abstract: A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.

Abstract: The present application provides a backlight module and a quantum dot display device. The present application improves energy efficiency by modifying a backlight of the quantum dot display device. Specifically, energy efficiency of a light-emitting element is improved by adding a small amount of phosphors in the backlight module or setting a diffuser plate as a transparent diffuser plate. In addition, the quantum dot display device provided by the present application not only has a backlight device, but also has a quantum dot film layer and a polarizer.

Abstract: A method and device for electrostatically controlling charges in an electrostatic field effect optoelectronic device by modulating charges in at least one layer of the electrostatic field effect optoelectronic device by providing either a positive bias or a negative bias to a capacitively coupled plate of the electrostatic field effect optoelectronic device thereby adjusting the charge utilization efficiency of the device.

Abstract: A multilayer metalens includes a substrate having first, second, and third axes that are perpendicular to each other. A first layer of antennas is arranged, relative to the third axis, on the substrate. Each antenna of the first layer of antennas is rotated relative to the first and second axes based on a position of each antenna of the first layer of antennas along the first and second axes. A second layer of antennas is arranged, in the third axis, on the first layer of antennas. Each antenna of the second layer of antennas is rotated relative to the first and second axes based on a position of each antenna of the second layer of antennas along the first and second axes. Each antenna in the first and second layers of antennas has, in a plane parallel to a top of the substrate an elongated shape.

Abstract: A light emitting device includes a light emitting element having an emission peak wavelength in a range of 380 nm to 420 nm and a fluorescent member including at least one fluorescent material that is excited by light from the light emitting element for light emission, wherein a mixture of light from the light emitting element and light from the fluorescent material has a correlated color temperature in a range of 2000 K to 7500 K as measured according to JIS Z8725, and the light emitting device has a spectral distribution in which, when the integral value over a wavelength range of 380 nm to 780 nm is normalized to 100%, the proportion of an integral value over a wavelength range of 380 nm to 420 nm is 15% or more, and the ratio a as defined by the expression (1) is 0.9 or more and 1.6 or less.

Abstract: The invention relates to a method for producing a dry film (3), wherein a dry powder mixture is processed into the dry film (3) by a rolling device comprising a first roller (2a) and a second roller (2b). The first roller (2a) has a higher circumferential rotational speed than the second roller (2b), and the dry film (3) is placed on the first roller (2a).

Abstract: An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.

Abstract: A semiconductor light emitting device includes a first electrode layer, a light emitting structure on the first electrode layer, a transparent electrode layer between the first electrode layer and the light emitting structure, an interlayer insulating layer between the transparent electrode layer and the first electrode layer, and having first and second openings, a second electrode layer between the first electrode layer and the interlayer insulating layer, and connected to the transparent electrode layer, and an electrode pad contacting the second electrode layer, each of the first openings and at least one of the second openings define one group to have at least first and second groups, the first group being closer to the electrode pad than the second group is, and a distance between the first and second openings in the first group being greater than a distance between the first and second openings in the second group.

Abstract: A first and second patterned circuit layer are formed on a first surface and a second surface of a base material. A first adhesive layer is formed on the first patterned circuit layer. A portion of the first surface is exposed by the first patterned circuit layer. The metal reflection layer covers the first insulation layer and a reflectance thereof is greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer, and the first adhesive layer is disposed between the first patterned circuit layer and the first insulation layer. A transparent adhesive layer and a protection layer are formed on the metal reflection layer. The transparent adhesive layer is disposed between the metal reflection layer and the protection layer. The protection layer comprises a transparent polymer. The light transmittance is greater than or equal to 80%.

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract: A semiconductor package includes a photonic die, an encapsulated electronic die, a substrate, and a lens structure. The photonic die includes an optical coupler. The encapsulated electronic die is disposed over and bonded to the photonic die. The encapsulated electronic die includes an electronic die and an encapsulating material at least laterally encapsulating the electronic die. The substrate is disposed over and bonded to the encapsulated electronic die. The lens structure is disposed over the photonic die and is overlapped with the optical coupler from a top view. The optical coupler is configured to be optically coupled to an optical signal source through the lens structure.

Abstract: A method is described for low temperature curing of silicone structures, including the steps of providing patterning photoresist structures on a substrate. The photoresist structures define at least one open region that can be at least partially filled with a condensation cure silicone system. Vapor phase catalyst deposition is used to accelerate the cure of the condensation cure silicone, and the photoresist structure is removed to leave free standing or layered silicone structures. Phosphor containing silicone structures that are coatable with a reflective metal or other material are enabled by the method.

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

Abstract: The disclosure provides a display substrate, a manufacturing method thereof and a display device. The display substrate has a plurality of subpixel regions. The display substrate includes a base substrate and a pixel definition layer on the base substrate. The pixel definition layer defines a plurality of subpixel openings and each of the subpixel openings occupies one subpixel region. The display substrate further includes a functional medium layer on a side of the pixel definition layer away from the base substrate. The functional medium layer includes a first portion covering side surfaces of the subpixel opening and a second portion covering a top surface of the pixel definition layer. In the same subpixel region, surface energy of the first portion is greater than surface energy of the second portion.

Abstract: A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.

Abstract: Discussed is a display device having a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements includes a first electrode and a second electrode spaced apart each other, a first conductivity type semiconductor layer disposed with the first electrode, a second conductivity type semiconductor layer configured to overlap with the first conductivity type semiconductor layer, and disposed with the second electrode, a first passivation layer covering outer surfaces of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a second passivation layer covering the first passivation layer, wherein at least one portion of the second electrode is overlapped with at least one portion of the first electrode along the thickness direction of the semiconductor light emitting element.

Abstract: A mesa portion is formed on a substrate. An insulating film including an organic layer is disposed on the mesa portion. A conductor film is disposed on the insulating film. A cavity provided in the organic layer has side surfaces extending in a first direction. A shorter distance out of distances in a second direction perpendicular to the first direction from the mesa portion to the side surfaces of the cavity in plan view is defined as a first distance. A shorter distance out of distances in the first direction from the mesa portion to side surfaces of the cavity in plan view is defined as a second distance. A height of a first step of the mesa portion is defined as a first height. At least one of the first distance and the second distance is greater than or equal to the first height.

Abstract: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

Abstract: Provided is a color transformation filter including a plurality of nanostructures included in a subpixel and spaced apart from each other, the plurality of nanostructures having a first refractive index, a low refractive index layer provided adjacent to the plurality of nanostructures, the low refractive index layer having a second refractive index less than the first refractive index, and a color transformation element included in the low refractive index layer.

Abstract: A dynamic random access memory (DRAM) device is provided. The DRAM device includes a circuit substrate, a light emitting element, a first light-permeable thermal dissipation element, and a first light blocking element. At least one DRAM chip is disposed on the circuit substrate. The light emitting element is disposed on the circuit substrate and coupled to the circuit substrate. The first light-permeable thermal dissipation element is disposed on the circuit substrate. The first light blocking element is disposed between the first light-permeable thermal dissipation element and the circuit substrate, and the first light blocking element is disposed on the first light-permeable thermal dissipation element.

Abstract: Capacitor structures, and apparatus containing similar capacitor structures, might include a first conductive region having a first portion and second and third portions extending from an upper surface of its first portion, a second conductive region having a first portion and a second portion extending from an upper surface of its first portion, a dielectric overlying the second portion of the first conductive region, a conductor overlying the dielectric, and a conductive element overlying the third portion of the first conductive region and overlying the second portion of the second conductive region, wherein the first conductive region has a first conductivity type and the second conductive region has a second conductivity type different than the first conductivity type.

Abstract: There are provided a display unit and an electronic apparatus that are capable of preventing color mixture in adjacent color pixels, and improving color reproducibility and chromaticity viewing angle. The display unit includes: a drive substrate having a plurality of pixels with a partition therebetween; and a first light shielding film provided on the partition.

Abstract: The present application provides a display panel and a manufacturing method thereof. The display panel includes an array substrate, a light emitting layer, and a water and oxygen adsorption layer. The light emitting layer is disposed on the array substrate. The light emitting layer includes a pixel definition structure and a plurality of light emitting parts, the pixel definition structure includes a plurality of grooves, and the light emitting parts are disposed in the grooves. The water and oxygen adsorption layer includes a plurality of water and oxygen adsorption parts, the water and oxygen adsorption parts are disposed on the pixel definition structure, and a surface of the water and oxygen adsorption parts is convex.

Abstract: A method for manufacturing a light-emitting device includes: forming a cover, which comprises: sandwiching a fixing member by a molding device, injecting a light-transmissive material into a space defined in the molding device, and hardening or curing the injected light-transmissive material, wherein the formed cover comprises an upper portion, a sidewall, and a recess, the cover being integrated with the fixing member such that the fixing member projects from a part of an outer lateral surface of the sidewall; disposing a light-transmissive member on a light extraction surface of a light-emitting element to be disposed on a substrate; and disposing the cover so that the light-emitting element is housed in the recess. The fixing member is formed of a material that is deformable due to a pressing force generated in the event of an engagement with a counterpart member.

Abstract: A semiconductor light-emitting device includes a stacked body, a cutout section, and a high-resistance region. The stacked body includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order and has paired side faces opposed to each other. The cutout section is provided on at least one of the paired side faces of the stacked body and has a bottom face where the first conductive-type semiconductor layer is exposed. The high-resistance region is provided from the vicinity of the bottom face of the cutout section to the side face of the stacked body and has electric resistance higher than the electric resistance of the stacked body in a periphery of the high-resistance region.

Abstract: The embodiments of the present application provide a package cover plate and a manufacturing method thereof, a display panel and a display device. The package cover plate includes a cover plate structure layer, a spacer structure on a side of the cover plate structure layer, the spacer structure includes a first spacer, and the first spacer includes a water absorbing structure, and an auxiliary electrode layer on a side of the spacer structure facing away from the cover plate structure layer.

Abstract: An integrated optical display system includes a backplane with appropriate electronics, and an array of micro-devices. A touch sensing structure may be integrated into the system. In one embodiment, an integrated circuit and system is integrated on top of micro-devices transferred to a substrate. Openings in a planarization layer (or layers) may be provided to connect the micro-devices with electrodes and other circuitry. Light reflectors may be used to redirect the light, and color conversion layers or color filters may be integrated before the micro-devices or on the substrate surface opposite to the surface of micro-devices.

Abstract: A micro-light-emitting diode chip includes an epitaxial structure, an electrode, a transparent structure, and a reflection layer. The epitaxial structure has a light exit surface, a back surface opposite to the light exit surface, and a sidewall surface. The sidewall surface is connected to the light exit surface and the back surface. The electrode is electrically coupled to the epitaxial structure. The transparent structure has an inner surface and an outer surface opposite to the inner surface. The inner surface is connected to the sidewall surface. A distance between the outer surface and the inner surface on a plane where the back surface is located is less than a distance between the outer surface and the inner surface on a plane where the light exit surface is located. The reflection layer is in direct contact with the outer surface. A micro-light-emitting diode display is also provided.

Abstract: A light-emitting diode (LED) package includes an LED chip on a substrate, an adhesive phosphor film on the LED chip, a cell lens on the adhesive phosphor film, and a lateral reflective layer covering respective lateral surfaces of the LED chip, the adhesive phosphor film, and the cell lens, a lateral surface of the lateral reflective layer being coplanar with a lateral surface of the substrate.

Abstract: A light-emitting element containing a fluorescent material and having high emission efficiency is provided. The light-emitting element contains the fluorescent material and a host material. The host material contains a first organic compound and a second organic compound. The first organic compound and the second organic compound can form an exciplex. The minimum value of a distance between centroids of the fluorescent material and at least one of the first organic compound and the second organic compound is 0.7 nm or more and 5 nm or less.

Abstract: An electrode structure includes: an indium tin oxide (ITO) electrode that includes ITO; an Al electrode that includes Al and covers the ITO electrode; and a barrier electrode that includes at least one of TiN and Cr and is interposed in a region between the ITO electrode and the Al electrode.

Abstract: Provided is a semiconductor module comprising a semiconductor chip, a lead frame including a chip connection portion configured to connect the lead frame to the semiconductor chip, and a bonding member configured to connect the chip connection portion and the semiconductor chip, wherein the semiconductor chip includes a semiconductor substrate, an active portion provided on the semiconductor substrate, and a transverse protective film provided above the active portion and provided to traverse the active portion in a top view, wherein the chip connection portion includes a center portion which covers a center of the transverse protective film in a top view and a first cut-out portion provided from a first end side of the chip connection portion towards the center portion.

Abstract: The present invention provides an organic light-emitting diode (OLED) device and a manufacturing of the OLED device. The OLED device includes a light-emitting layer, an insulating layer, an electron transport layer, and an electron injection layer. The insulating layer is arranged on one side of the light-emitting layer, and a through hole is in the insulating layer. The through hole is arranged corresponding to a middle portion of the light-emitting layer. The electron transport layer is in a lower portion of the through hole and attached to a surface of the light-emitting layer. The electron injection layer is in an upper portion of the through hole and attached to one side of the electron transport layer away from the light-emitting layer.

Abstract: A mechanical pencil includes a ball chuck, a rotation drive mechanism having a rotary part and receiving an axial direction retraction operation due to writing pressure received by the lead held by the ball chuck and an axial direction advance operation due to release of the writing pressure to drive the rotary part to rotate in one direction, a feed cam face having a ring-shaped cam face vertical to the axial direction and an axial direction step part, and a slider having an abutting part abutting against the feed cam face and a holding chuck holding a lead and rotating upon receiving a rotation drive force of the rotary part, which is configured so that the lead held by the holding chuck is pulled out from the ball chuck due to the advance operation of the slider.

Abstract: The present disclosure relates to a lighting component which may comprise a light emitting diode (LED) or laser diode (LD) for generating at least one of blue light or ultraviolet light. A fluoride phosphor matrix may be included, which may be consolidated into a phosphor ceramic structure including at least one of a transparent fluoride ceramic structure or a translucent fluoride ceramic structure, and positioned adjacent to the LED or LD. The phosphor ceramic structure generates at least one of red or orange light when irradiated by the light emitted from the LED or LD. The phosphor ceramic structure exhibits reduced thermal quenching relative to a fluoride particulate structure irradiated by the LED or LD.

Abstract: A light-emitting diode includes a first type semiconductor layer, a stress relief layer disposed on the first type semiconductor layer and including at least one first repeating unit containing a first well layer and a first barrier layer that are alternately stacked, an active layer disposed on the stress relief layer and including at least one second repeating unit containing a second well layer and a second barrier layer that are alternately stacked, a second type semiconductor layer disposed on the active layer, a first electrode electrically connected to the first type semiconductor layer, and a second electrode electrically connected to the second type semiconductor layer. The first well layer is made of an In-containing material. The second well layer is made of an In-containing material. The second barrier layer is formed with multiple sub-layers, each of which is made of an Al-containing material.

Abstract: A light-emitting device includes a substrate having a first surface and a second surface opposite to the first surface; a light-emitting stack formed on the first surface; and a distributed Bragg reflection structure formed on the second surface, wherein the distributed Bragg reflection structure includes a first film stack and a second film stack; wherein the first film stack includes a plurality of first dielectric-layer pairs consecutively arranged, the second film stack includes a plurality of second dielectric-layer pairs consecutively arranged, each of the first dielectric-layer pairs and each of the second dielectric-layer pairs respectively includes a first dielectric layer having an optical thickness and a second dielectric layer having an optical thickness; wherein the second dielectric layer has a refractive index higher than that of the first dielectric layer; wherein in each of the first dielectric-layer pairs of the first film stack, the optical thickness of the first dielectric layer to the opt