Abstract: A deep ultraviolet (DUV) light-emitting diode (LED) module structure contains: a holder configured to accommodate a substrate. The holder including a receiving cup mounted therein and a transparent layer mounted on a top of the receiving cup. The holder includes a DUV LED chip adhered on the substrate, and the holder, the substrate, and the DUV LED chip are connected and packaged. The substrate is electrically connected with a drive circuit, and the drive circuit is configured to turn on/off the DUV LED chip. Thereby, the DUV LED module structure enhances DUV radiation intensity, reduces a loss of optical path, and slows down deterioration because of DUV irradiation.

Abstract: A phosphor is specified. The phosphor has the general molecular formula: (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC?N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; 3.5?u?4; 3.5?v?4; (?0.2)?w?0.2 and 0?m<0.

Abstract: A method of manufacturing a display apparatus includes separating a mother substrate that includes a plurality of connected unit display apparatuses into a plurality of separated unit display apparatuses. Each separated unit display apparatus includes a display panel and at least one supporting unit attached below the display panel. The display panel includes a display substrate that has a pad area on which are disposed a plurality of pads and a thin film encapsulation layer on the display substrate. The method further includes consecutively cutting the display panel and the at least one supporting unit of each separated unit display apparatus along cutting lines in the pad area, where a first cut surface of the pad area of the display substrate and a second cut surface of the at least one supporting unit are respectively cut at different angles.

Abstract: A micro light emitting diode display includes a substrate, an electrode layer and a micro light emitting diode device. The substrate has a first surface, a second surface opposite to the first surface, and at least one air passage extending from the first surface to the second surface. The electrode layer is disposed on and in contact with the first surface of the substrate. The air passage has an opening on the first surface of the substrate, and the electrode layer is spaced apart from the opening. The micro light emitting diode device is disposed on the electrode layer and has a light emitting area that is less than or equal to 2500 ?m2.

Abstract: A display device includes a display element layer on a substrate. The display element layer may include first and second electrodes, and light emitting elements electrically coupled to the first and second electrodes. The first electrode may include first protrusions, a first portion located between the first protrusions, a second portion corresponding to a side of each first protrusion, and a third portion coupled between the first portion and a first end of the second portion. The second electrode may include second protrusions that protrude toward the first electrode and are spaced apart from each other in the first direction, a first portion located between the second protrusions, a second portion corresponding to a side of each of the second protrusions, and a third portion coupled between the first portion and a first end of the second portion.

Abstract: An optoelectronic component and an assembly with an optoectronic component are disclosed. In an embodiment an optoelectronic component includes an optical element with an outer surface and an inner surface that faces away from the outer surface, wherein the inner surface includes a first region of the optical element, in which the inner surface is flat, wherein the inner surface includes a second region of the optical element, wherein the second region adjoins the first region, and wherein the inner surface includes a third region of the optical element, in which the inner surface extends from the second region in the direction of a housing.

Abstract: Pixelated array light emitters are formed with closely-spaced pixels having ultra-smooth sidewalk. In methods for making such pixelated array light emitters, a converter layer of phosphor particles dispersed in a binder is disposed on a carrier, and then singulated by saw cuts or similar methods to form an array of phosphor pixels. The binder is fully cured prior to singulation of the converter layer. Further, the carrier is rigid rather than flexible. As a consequence of fully curing the binder and of using a rigid carrier to support the converter layer, singulation results in phosphor pixels having smooth side walls. The array of phosphor pixels is subsequently attached to a corresponding array of LEDs with an adhesive layer, separate from the binder used to form the converter layer. The pixel sidewalls may be formed with controlled morphology, for example at acute or obtuse angles with respect to the carrier.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip that, during intended operation, generates primary radiation coupled out of the semiconductor chip via an emission side of the semiconductor chip; and a first conversion element on the emission side, wherein the first conversion element includes a first matrix material and first phosphor particles in the form of quantum dots, the first phosphor particles are distributed and embedded in the first matrix material, and the first matrix material is formed by a polysiloxane in which an atomic percentage of carbon is smaller than an atomic percentage of oxygen.

Abstract: The invention relates to a luminophore mixture which comprises at least one quantum dot luminophore and at least one functional material, the functional material is formed such that it scatters electromagnetic radiation and/or has a high density.

Abstract: An optoelectronic component may include a radiation-emitting semiconductor chip configured to emit electromagnetic radiation and a phosphor mixture. The excitation spectrum may have a peak wavelength ranging from 435 nm to 460 nm. The phosphor mixture may have three phosphors configured to emit electromagnetic radiation in different spectral ranges.

Abstract: A light-emitting device is provided. The light-emitting device includes a light-emitting element having a peak light-emitting wavelength in the range of 440 nm to 470 nm, and a fluorescent member. The fluorescent member includes a first fluorescent material having a peak light-emitting wavelength in the range of 480 nm to less than 520 nm, a second fluorescent material having a peak light-emitting wavelength in the range of 520 nm to less than 600 nm, and a third fluorescent material having a peak light-emitting wavelength in the range of 600 nm to 670 nm. The light-emitting device has a ratio of an effective radiant intensity for melatonin secretion suppression to an effective radiant intensity for blue-light retinal damage of 1.53 to 1.70 when the light-emitting device emits light with a correlated color temperature of 2700 K to less than 3500 K; 1.40 to 1.70 when the light-emitting device emits light with a correlated color temperature of 3500 K to less than 4500 K; 1.40 to 1.

Abstract: There are provided a master and a method for manufacturing the master, the master having, on its outer peripheral surface, a concave-convex structure in which concavities or convexities are continuously arranged with high precision. The master includes: a substrate with a hollow cylindrical shape or cylindrical shape; and a concave-convex structure on an outer peripheral surface of the substrate. The concave-convex structure has concavities or convexities continuously arranged at a predetermined pitch in a circumferential direction of the substrate. The concavities or convexities are arranged with a predetermined phase difference between circumferential rows adjacent in an axial direction of the substrate.

Abstract: A manufacturing method of an organic light-emitting diode is provided in the present disclosure. The manufacturing method of the organic light-emitting diode includes steps as follows. A substrate is provided and a layered structure forming step is performed. In the layered structure forming step, an anode layer, a scattering layer, an emissive layer and a cathode layer are sequentially formed on the substrate, so as to obtain an organic light-emitting diode. A material of the scattering layer is a quasicrystalline material.

Abstract: Lighting systems, methods, and devices for protecting human circadian neuroendocrine function during night use are described. Suitable lighting conditions can be provided for a working environment while protecting the circadian neuroendocrine systems of those occupying the illuminated workplace during the night. Lighting systems, methods, and devices can provide substantive attenuation of the pathologic circadian disruption in night workers. Lighting systems, methods, and devices can attenuate the specific bands of light implicated in circadian disruption. LED lighting systems, methods, and devices can provide increased intensity at a different portion of the spectrum than conventional LEDs, providing a useable white light even when unfavorable portions of the wavelength are attenuated by a notch filter.

Abstract: A manufacturing method of a light-emitting device, including the steps of: preparing a substrate including a base, a first wall formed on an upper surface of the base, and a recess defined by a lateral surface of the first wall as an inside lateral surface and the upper surface of the base as a bottom surface; mounting a light-emitting element on the bottom surface of the recess; disposing a sealing member which covers the light-emitting element and the first wall; forming a groove section extending from an upper surface of the sealing member to the first wall by removing the sealing member on the first wall; disposing a second wall inside the groove section; and cutting the second wall and the substrate at a position including the second wall.

Abstract: A light emitting diode (LED) display panel is provided. The LED display panel includes a printed circuit board (PCB), a flexible substrate disposed on the PCB, and a pixel array. The flexible substrate has a plurality of holes. The pixel array is formed by a first matrix circuit disposed on the flexible substrate, a second matrix circuit disposed on the PCB, and a plurality of LEDs disposed on the PCB, collectively defining a plurality of pixels. Each of the pixels comprises a corresponding one of the LEDs and pixel circuits formed by the first matrix circuit and the second matrix circuit. A projection of each of the LEDs correspondingly overlaps with a projection of one of the holes on the flexible substrate along an extending direction of the holes. A mosaic LED display panel may be formed by multiple LED display panel butted or tiled together.

Abstract: An embodiment includes a semiconductor device including a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulation layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed on the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; a second cover electrode disposed on the second electrode; and a second insulation layer extending from an upper surface of the first cover electrode to an upper surface of the second cover electrode.

Abstract: A radiation source for obliquely launching a narrowband electromagnetic radiation into a cavity, comprises an emitter structure having a main radiation emission region for emitting the narrowband electromagnetic radiation, wherein the emitter structure is optically coupled to the cavity, and a layer element coupled to the main radiation emission region of the emitter structure, wherein the layer element comprises a radiation deflection structure configured for deflecting the radiation emission characteristic of the emitter structure with respect to the surface normal of the main radiation emission region of the emitter structure.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: Before a semiconductor die of a brittle III-V compound semiconductor is encapsulated with a molding compound during package fabrication, side surfaces of the semiconductor die are treated to avoid or prevent surface imperfections from propagating and fracturing the crystal structure of the substrate of the III-V compound semiconductor under the stresses applied as the molding compound solidifies. Surfaces are treated to form a passivation layer, which may be a passivated layer of the substrate or a passivation material on the substrate. In a passivated layer, imperfections of an external layer are transformed to be less susceptible to fracture. Passivation material, such as a poly-crystalline layer on the substrate surface, diffuses stresses that are applied by the molding compound. Semiconductor dies in flip-chip and wire-bond chip packages with treated side surfaces as disclosed have a reduced incidence of failure caused by die fracturing.

Abstract: A light source includes a semiconductor element with a substrate, a translucent sealing resin that covers the semiconductor element, and a reflective layer that is disposed on an upper face of the sealing resin.

Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer, a coupling layer, and a sacrificial thin film. The first type semiconductor layer and the second type semiconductor layer are disposed at opposite sides of the active layer. The coupling layer is disposed on the second type semiconductor layer. The sacrificial thin film is disposed on the coupling layer, in which the coupling layer is disposed between the sacrificial thin film and the second type semiconductor layer, and the sacrificial thin film has a thickness less than a total thickness of the first type semiconductor layer, the active layer, the second type semiconductor layer and the coupling layer.

Abstract: A light emitting device includes: a base body including two conductive members, a resin body, and a fiber member placed inside the resin body, and a light-emitting element. The resin body includes an isolation section located between the two conductive members, and includes a pair of sandwiching portions sandwiching the isolation section. The fiber member has a length which is greater than a distance between the two conductive members, and is located at least in an adjoining region of at least one of the pair of sandwiching portions, the adjoining region adjoining the isolation section. In the adjoining region, the fiber member extends in a direction which is non-orthogonal to a direction in which that the pair of sandwiching portions extend.

Abstract: A method for manufacturing a display array includes the following steps: providing a substrate and forming a semiconductor stacked layer on the substrate; forming an insulating layer and a plurality of electrode pads on an outer surface of the semiconductor stacked layer, the insulating layer and the electrode pads directly contacting the semiconductor stacked layer, wherein the insulating layer has a plurality of openings, and the electrode pads are respectively located in the openings of the insulating layer and separated by the insulating layer; and transferring the semiconductor stacked layer, the insulating layer and the electrode pads from the substrate to a driving backplane, wherein the electrode pads are respectively electrically connected to a portion of the semiconductor stacked layer and the driving backplane through the openings of the insulating layer to form a plurality of light emitting regions in the semiconductor stacked layer.

Abstract: The embodiments of the present disclosure provide a display panel, a manufacturing method thereof, and a display device. The display panel includes a first substrate and a second substrate cell-assembled to each other, a light emitting member layer disposed between the first substrate and the second substrate and a light diffusion layer disposed on a light existing side of the light emitting member layer, the light emitting member layer includes a plurality of light emitting units and imaging holes disposed on at least two sides of each of the light emitting units, the light diffusion layer includes a reflective member configured to reflect a light ray emitted by the light emitting unit and reaching the reflective member, and the reflected light ray reflected by the reflective member exits from the imaging holes.

Abstract: A sol-gel process for synthesizing a luminescent material has a general formulation: AxByFz:Mn. A is an element of group 1, 2, 4, NR4 or a combination of elements belonging to those groups, with R?H or an alkyl chain or a combination of chains. B is an element of group 5, 6, 13, 14 and 0<x?5, 0<y?2, 5?z?7. The sol-gel process includes a) producing a liquid precursor (2, 3) in an alcohol solution by mixing metal reagents (1) with manganese, the mixture being made at pH<8; b) obtaining a solid precursor (5, 6) from the liquid precursor (2, 3) obtained in step a), by eliminating (4) the solvent; c) crystallizing (7, 70) the solid precursor (5, 6) obtained in step b) by thermal treatment in fluorinated atmosphere; and d) retrieving the fluorescent crystalline powder (8) obtained at an end of step c).

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: A process of forming a sintered article includes heating a green portion of a tape of polycrystalline ceramic and/or minerals in organic binder at a binder removal zone to a temperature sufficient to pyrolyze the binder; horizontally conveying the portion of tape with organic binder removed from the binder removal zone to a sintering zone; and sintering polycrystalline ceramic and/or minerals of the portion of tape at the sintering zone, wherein the tape simultaneously extends through the removal and sintering zones.

Abstract: The invention relates to a method, an arrangement and an array, in which a structured contact layer and an elastic carrier layer arranged on a first side of the structured contact layer and connected to the structure contact layer by means of a bonded connection is produced, and in which at least one optoelectronic semiconductor component is arranged on the structured contact layer, on a second side of the structured contact layer, opposing the first side, and is electrically and mechanically connected to the structured contact layer, an elastic conversion layer in an irradiation region being applied to the structured contact layer and the elastic carrier layer in such a way that at least the optoelectronic semiconductor component is embedded in the conversion layer, at least in sections, and a connection region of the structure contact layer remains uncovered.

Abstract: A package includes a substrate, a first light-emitting unit, a second light-emitting unit, a light-transmitting layer, and a light-absorbing layer. The substrate has a first surface and an upper conductive layer on the first surface. The first light-emitting unit and the second light-emitting unit are disposed on the upper conductive layer. The first light-emitting unit has a first light-emitting surface and a first side wall. The second light-emitting unit has a second light-emitting surface and a second side wall. The light-transmitting layer is disposed on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit. The light-absorbing layer is disposed between the substrate and the light-transmitting layer, covers the upper conductive layer, the first side wall, and the second side wall, and exposes the first light-emitting surface and the second light-emitting surface.

Abstract: An electrode structure of a back electrode including metal layers laminated in the following order: a Ti layer, a Ni layer, and a Ag alloy layer. The Ag alloy layer includes an Ag alloy and an addition metal M selected from Sn, Sb, and Pd. The electrode structure is configured such that when subjected to elemental analysis with an X-ray photoelectron spectrometer in the depth direction from the Ag alloy layer to the Ni layer, on the boundary between the Ni layer and the Ag alloy layer, an intermediate region where spectra derived from all the metals, Ni, Ag, and the addition element M, can be detected is observable, and, when each metal content in the intermediate region is converted based on the spectra derived from all the metals Ni, Ag, and the addition element M, the maximum of the addition element M content is 5 at % or more.

Abstract: Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

Abstract: A light-emitting device includes an epitaxial structure, and first and second electrodes. The epitaxial structure has a first surface and a second surface opposite to each other, first dislocation density regions and second dislocation density regions. The first dislocation density regions and the second dislocation density regions are alternately disposed between the first surface and the second surface. A dislocation density of each first dislocation density region is lower than a dislocation density of each second dislocation density region and a quantity of the first dislocation density regions is at least ten. The epitaxial structure further includes a light-emitting layer, a first-type semiconductor layer and a second-type semiconductor layer disposed on two opposite sides of the light-emitting layer. The first electrode and the second electrode are electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively.

Abstract: The present application provides a light emitting device, a method for making the same and a display apparatus. The light emitting device includes: a driving backplane; at least one set of driving electrodes disposed on the driving backplane, each set of driving electrodes including a first driving electrode and a second driving electrode; an epitaxial layer located on a side of the at least one set of driving electrodes away from the driving backplane; and at least one set of metal electrodes located on a side of the epitaxial layer close to the driving backplane, each set of metal electrodes including a first metal electrode and a second metal electrode, the first metal electrode and the second metal electrode being respectively connected to a first driving electrode and a second driving electrode, and a filling material being disposed between the first metal electrode and the second metal electrode.

Abstract: A light emitting device includes a substrate, a light source, a cover member, a light transmissive member disposed on or above the light source, a light reflecting layer disposed on or above the light transmissive member, and a light transmissive cover member. The cover member is made of a resin material containing a light reflecting substance and covers a lateral face of the light source. The light transmissive cover member covers at least a lateral face of the light transmissive member and includes an annular lens part. A thickness of a portion of the light transmissive cover member disposed above a perimeter of the light reflecting layer is larger than a thickness of a portion of the light transmissive cover member disposed above a portion of the light reflecting layer where an optical axis of the light emitting element passes through.

Abstract: A light emitting device includes a semiconductor light source device including a plurality of semiconductor light emitting elements, a wavelength conversion member that converts a wavelength of irradiation light from the semiconductor light source device, a concentrating lens that concentrates the irradiation light from the semiconductor light source device, and a cylindrical holder. The semiconductor light source device, the wavelength conversion member and the concentrating lens is supported by a support portion provided in an inner diameter portion of the cylindrical holder.

Abstract: A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.

Abstract: A display device includes a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first protruding electrodes disposed on the first electrode, a plurality of second protruding electrodes disposed on the second electrode, and a plurality of light emitting elements electrically connected to the plurality of first protruding electrodes and the plurality of second protruding electrodes.

Abstract: The present invention relates to a manufacturing method for a wavelength converting component which is prepared from a dispersion containing a crosslinkable ceramizable polymer material having a silazane repeating unit and at least one wavelength converting material. There are further provided wavelength converting components which can be used for converting blue, violet and/or UV light into light with a longer wavelength. There is also provided a light source and a lighting unit comprising said wavelength converting components.

Abstract: A micro light-emitting display is provided. The display includes a first transparent micro-cap disposed on a substrate. The first transparent micro-cap includes a first plate portion disposed opposite the substrate, and a first dam portion disposed between the substrate and the first plate portion. The substrate, the first plate portion, and the first dam portion form a first chamber. The display also includes a first micro light-emitting device disposed on the substrate and within the first chamber. The first chamber is in a vacuum or filled with air or an inert gas. In addition, the display includes a first color material layer disposed on the first plate portion and corresponding to the first micro light-emitting device. A method for forming the micro light-emitting display is also provided.

Abstract: An electroluminescent device and a light-emitting layer and an application thereof. The light-emitting layer comprises at least one nano-crystalline semiconductor material and at least one exciplex; an emission spectrum of the exciplex is at least partially overlapped with an excitation spectrum of the nano-crystalline semiconductor material; and the attenuation life of an excited state of the exciplex is longer than the attenuation life of an excited state of the nano-crystalline semiconductor material.

Abstract: Disclosed are an array substrate, a display panel and a display device. The array substrate includes: a base substrate, electroluminescent devices located on the base substrates, and a reflection structure located on the side away from light exiting surfaces of the electroluminescent devices, where the reflection structure includes at least two groups of Bragg reflectors configured to reflect visible light in preset wave bands, the preset wave bands reflected by the different groups of Bragg reflectors are different, the various preset wave bands do not completely overlap, wavelength ranges of light emitted by the electroluminescent devices overlap with wavelength ranges of light reflected by the Bragg reflectors corresponding to the electroluminescent devices.

Abstract: A semiconductor light-emitting device includes a junction between doped semiconductor layers, a first set of multiple independent contacts connected to a first doped layer and a second set of one or more contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, enabling differing corresponding via currents to be applied to the first doped layer through the vias independent of one another. A spatial distribution of via currents among the multiple vias can be selected to yield a corresponding spatial distribution of emission intensity. Alteration of the via current distribution results in corresponding alteration of the emission intensity distribution; such alterations can be implemented dynamically.

Abstract: A lighting device is specified. The lighting device comprises a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j?k?2l?3m?4n=w; 0.8?t?1; ?3.

Abstract: A surface light source and a manufacturing method thereof and a liquid crystal display device. The surface light source includes a substrate; a plurality of light emitting diode dies arranged in an array along a row direction and a column direction on the substrate; a driving circuit on the substrate and electrically connected to the plurality of light emitting diode dies and the driving circuit being configured to control at least two of the plurality of light emitting diode dies to emit light independently of each other; and an encapsulation layer on a side of the plurality of light emitting diode dies away from the substrate. The encapsulation layer is a continuous film layer covering the plurality of light emitting diode dies.

Abstract: An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.

Abstract: An image display element includes micro light emitting elements arranged in an array, a drive circuit substrate that includes a drive circuit for supplying a current to the micro light emitting elements to cause light to be emitted, and an antenna arranged on a light emitting surface of each of the micro light emitting elements, in which the antenna includes isolated convex portions.

Abstract: A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while an N-type electrode is electrically linked with said N-type semiconductor layer.

Abstract: A lighting device for emitting a red total radiation may be configured such that the lighting device has a semiconductor layer sequence configured to emit electromagnetic primary radiation. A conversion element may include a first fluorescent material of the formula Sr[Al2Li2O2N2]:Eu, crystallized in the tetragonal space group P42/m. The first fluorescent material may at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum. The conversion element may include a second fluorescent material to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation in the red region of the electromagnetic spectrum and/or the lighting device may include a mirror or filter arranged above the conversion element.

Abstract: A light emitting device of one embodiment of the present disclosure includes: a substrate; a light emitting element disposed above the substrate, and having electrodes on respective upper surface and lower surface of the light emitting element; and a light shielding layer provided between the substrate and the light emitting element.