Abstract: A pixel defining layer, a display substrate and manufacturing method thereof, and a display apparatus are provided. The pixel defining layer includes: a lyophilic material layer disposed on a base substrate, and a lyophobic material layer disposed at a side of the lyophilic material layer away from the base substrate. An orthographic projection of a surface of the lyophobic material layer close to the base substrate on the base substrate is within an orthographic projection of a surface of the lyophilic material layer away from the base substrate on the base substrate. The lyophilic material layer is made of a lyophilic material having attractability to a solution with organic electroluminescent materials dissolved, and the lyophobic material layer is made of a lyophobic material having repellency to the solution with organic electroluminescent materials dissolved. The pixel defining layer reduces the influence on the uniformity of the films.

Abstract: A substantial amount of the light emitting surface area of a wavelength conversion element above a light emitting element is covered by a reflective thermal conductive element. The light that is reflected by this reflective element is ‘recycled’ within the light emitting structure and exits the structure through the smaller area that is not covered by the reflective element. Because the thermal conductive element does not need to be transparent, a relatively thick metal layer may be used; and, because the thermal conductive element covers a substantial area of the wavelength conversion element, the thermal efficiency of this arrangement is very high. The reflective thermal conductive element may be coupled to thermal conductive pillars, which may be mounted on a thermal conductive submount.

Abstract: A backlight for a display screen, an electronic device and a method of operating a backlight are described. A backlight includes a light guide, a lead frame, and at least one visible light-emitting diode (LED) and at least one infrared (IR) LED on the lead frame. The backlight includes at least one light entry face and a light exit face. The lead frame includes a first lead and a second lead isolated from each other. The at least one visible LED is optically coupled to one of the at least one light entry face and includes a counter electrode contacted by the first lead and an electrode contacted by the second lead. The at least one IR LED is optically coupled to one of the at least one entry face and includes a counter electrode contacted by the second lead and an electrode contacted by the first lead.

Abstract: Substrate based light emitter devices, components, and related methods are disclosed. In some aspects, light emitter components can include a substrate and a plurality of light emitter devices provided over the substrate. Each device can include a surface mount device (SMD) adapted to mount over an external substrate or heat sink. In some aspects, each device of the plurality of devices can include at least one LED chip electrically connected to one or more traces and at least one pair of bottom contacts adapted to mount over a surface of external substrate. The component can further include a continuous layer of encapsulant disposed over each device of the plurality of devices. Multiple devices can be singulated from the component.

Abstract: Provided is a display device including: a substrate; a plurality of display elements defining a display area on the substrate and each including a pixel electrode, an opposite electrode, and an intermediate layer between the pixel electrode and the opposite electrode; a power supply wiring disposed outside the display area; an organic insulating layer on the power supply wiring and having an opening exposing the power supply wiring; a power supply electrode layer partially disposed on the organic insulating layer and including a plurality of holes over the organic insulating layer, wherein a first portion of the power supply electrode layer overlaps the power supply wiring and a second portion of the power supply electrode layer overlaps the opposite electrode; a plurality of protrusions spaced apart from each other and respectively covering at least some of the plurality of holes; and an encapsulation layer covering the plurality of display elements.

Abstract: A light source that includes an LED light source, and one or more encapsulants containing a light-absorbing component that absorbs light in the wavelength range of about 415 nm to about 435 nm and can include at least one phosphor that can provide an LED light source that emits white light having a reduced amount of blue light or even toxic blue light with minimal effect on color characteristics such as correlated color temperature (CCT), color gamut, and luminance.

Abstract: A light emitting device includes: a light emitting element having an emission face and lateral faces; a wavelength conversion member having a first face and a second face which opposes the first face, the wavelength conversion member being disposed on the emission face of the light emitting element so that the first face faces the emission face; a reflecting member disposed on lateral face sides of the light emitting element and covering at least a portion of outer lateral faces of the wavelength conversion member, and a cover member disposed on an upper face of the reflecting member while being adjacent to peripheral ends of the wavelength conversion member. The cover member contains at least one of a reflecting substance and a coloring substance. A body color of the wavelength conversion member and a body color of the cover member are the same color or similar colors.

Abstract: A method of manufacturing a surface emitting laser includes: preparing a substrate on which a lower reflector layer, an active layer and an upper reflector layer are formed in this order from the bottom, each of the lower reflector layer and the upper reflector layer including a semiconductor multilayer film; forming an insulating film on the upper reflector layer; cleaning the substrate using isopropyl alcohol after the forming; patterning a photoresist by applying the photoresist on the insulating film and exposing the photoresist, after the cleaning; and forming a high resistance region by implanting ions into portions of the lower reflector layer, the active layer and the upper reflector layer exposed from the photoresist, after the patterning; wherein the cleaning includes cleaning the substrate with a liquid of the isopropyl alcohol and drying the substrate in a vapor of the isopropyl alcohol.

Abstract: An optical component includes a first substrate including a phosphor substrate and a second substrate including a translucent substrate and supporting the first substrate. The translucent substrate has a polycrystalline structure with orientation.

Abstract: Embodiments of the invention include a plurality of light emitting devices, each light emitting device having a top surface, a bottom surface opposite the top surface, and at least one side surface connecting the top surface and the bottom surface. A wavelength converting layer is disposed in direct contact with the top surface and one side surface of each of the plurality of light emitting devices to mechanically connect each of the plurality of light emitting devices together. The wavelength converting layer is made up of a wavelength converting material, an adhesive material, and a transparent material that has a thermal conductivity of at least 0.2 W/mK. The adhesive material and the transparent material have indices of refraction that vary less than ten percent.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Abstract: Structures and associated methods for making smaller physical feature sizes for masks used in imprint lithography for application to patterning for advanced semiconductor and data storage devices.

Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.

Abstract: A device comprising a light emitting diode (LED) substrate, and a meta-molecule wavelength converting layer positioned within an emitted light path from the LED substrate, the a meta-molecule wavelength converting layer including a plurality of nanoparticles, the plurality of nanoparticles configured to increase a light path length in the wavelength converting layer.

Abstract: Light emitting devices (LEDs) are described herein. An LED includes a light emitting semiconductor structure, a wavelength converting material and an off state white material. The light emitting semiconductor structure includes a light-emitting active layer disposed between an n-layer and a p-layer. The wavelength converting material has a first surface adjacent the light emitting semiconductor structure and a second surface opposite the first surface. The off state white material is in direct contact with the second surface of the wavelength converting material and includes multiple core-shell particles disposed in an optically functional material. Each of the core-shell particles includes a core material encased in a polymer or inorganic shell. The core material includes a phase change material.

Abstract: A laser device that is easily assembled and can be manufactured at a low cost and a light-source device using the same are provided. The laser device includes a mount member including a mount surface, and a semiconductor laser element placed on the mount surface of the mount member. An upper side and lateral sides of the semiconductor laser element on the mount surface are exposed.

Abstract: A light emitting device including a light emitting element, a light transmissive member, a light guide member, and a light reflective member. The light transmissive member is disposed on an upper surface of the light emitting element, and has a lower surface including a first region facing the light emitting element and a second region positioned outside of the first region. The light guide member covers a lateral surface of the light emitting element and the second region of the lower surface of the light transmissive member. The light reflective member covers the light emitting element, an upper surface of the light transmissive member and the light guide member. One of lateral surfaces of the light transmissive member is exposed from the light reflective member.

Abstract: An organic light emitting display (OLED) device includes an organic light emitting diode having an anode and a cathode. The organic light emitting diode is configured to receive a reference voltage. A control transistor includes a first control electrode and a first semiconductor active layer. The control transistor is configured to receive a control signal. A driving transistor includes a second control electrode that is electrically connected to the control transistor, an input electrode that is configured to receive a power voltage, an output electrode that is electrically connected to the anode of the organic light emitting diode, and a second semiconductor active layer that includes a different material from that of the first semiconductor active layer. A shielding electrode is disposed on the second semiconductor active layer, overlapping the driving transistor, and configured to receive the power voltage.

Abstract: A sensing substrate including a substrate, a quantum well structure, a sensing surface and metal nanoparticles is provided. The quantum well structure is disposed on the substrate, and the quantum well structure includes at least one first metal nitride layer and second metal nitride layers. The first metal nitride layers and the second metal nitride layers are stacked on the substrate in alternation manner. The quantum well structure is located between the sensing surface and the substrate. The metal nanoparticles are disposed on the sensing surface, and the sensing surface is a rough surface. A manufacturing method of the sensing substrate and a sensor are also provided.

Abstract: A light-emitting element and a light-emitting device having low light loss, high luminance, and high light extraction efficiency are provided. The light-emitting element includes: a semiconductor structure layer having a light-emitting layer; a light-transmitting substrate provided on the semiconductor structure layer; a wavelength conversion layer disposed on the light-transmitting substrate; a light-transmitting covering member configured to cover at least a part of a side surface of the light-transmitting substrate and have transparency to light from the light-emitting layer; and a light-shielding member configured to entirely cover surfaces including a surface of the light-transmitting covering member, and including a side surface of the semiconductor structure layer, a side surface of the light-transmitting substrate, and a side surface of the wavelength conversion layer.

Abstract: Embodiments of the invention include a light source and a wavelength converting structure disposed in a path of light emitted by the light source. The wavelength converting structure includes a first phosphor that emits infrared light and a second phosphor that emits visible light. In some embodiments, the light source emits first light, the second phosphor absorbs the first light and emits second light, and the first phosphor absorbs the first light and emits third light and absorbs the second light and emits fourth light.

Abstract: An organic light-emitting device and display apparatus, the device including a first electrode; a second electrode facing the first electrode; an emission layer between the first and second electrode; a hole control layer between the first electrode and the emission layer; and an electron control layer between the emission layer and the second electrode, wherein the emission layer includes a plurality of sub-emission layers to emit light having different wavelengths, at least portions of the plurality of sub-emission layers do not overlap one another, the plurality of sub-emission layers include: a first sub-emission layer including a first color light-emitting dopant, and a second sub-emission layer including a second color light-emitting dopant, the first and second sub-emission layers each include a hole-transporting and electron-transporting host which form an exciplex, and a triplet energy of the exciplex is equal to or greater than triplet energies of the first and second color light-emitting dopant.

Abstract: Discussed is a display device, including a semiconductor light emitting device and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction of the semiconductor light emitting device, wherein the first conductive semiconductor layer has a symmetrical shape with respect to at least one direction of the semiconductor light emitting device so that the first conductive electrode and the second conductive electrode are arranged at preset positions when the semiconductor light emitting device is accommodated into

Abstract: A light source that includes an LED light source, and one or more encapsulants containing a light-absorbing component that absorbs light in the wavelength range of about 415 nm to about 435 nm and can include at least one phosphor that can provide an LED light source that emits white light having a reduced amount of blue light or even toxic blue light with minimal effect on color characteristics such as correlated color temperature (CCT), color gamut, and luminance.

Abstract: The present disclosure provides an LED light strip and a backlight module having the same. The LED light strip includes a circuit board; the circuit board has a board body and a support structure disposed on a surface of the board body; a plurality of LED light emitting elements are disposed on the support structure, the plurality of the LED light emitting elements are arranged in a plurality of rows and face to a first direction parallel to the board body; the arrangement direction of each row of the LED light emitting elements is a second direction that is parallel to the board body and perpendicular to the first direction; and the orthographic projections of the LED light emitting elements on a plane that is parallel to the second direction and perpendicular to the first direction are staggered from each other.

Abstract: To improve light emission efficiency and suppress color unevenness on a light emitting surface. Provided is a semiconductor light emitting device including a light emitting element, a wavelength conversion layer for converting light emitted from the light emitting element to light having a predetermined wavelength, a light reflection member covering at least the side surfaces of the wavelength conversion layer, and a thin film provided on the outermost surface from which the light wavelength-converted by the wavelength conversion layer exits, having a property for shedding the uncured light reflection member, and having a coarse surface.

Abstract: Disclosed are an LED light source apparatus, a lighting device, and a lighting control method. The LED light source apparatus includes a plurality of light mixing units. Each light mixing unit comprises LED chips of at least four colors, and the at least four colors at least include red and green. The plurality of light mixing units is uniformly distributed on a bearing surface along a ring.

Abstract: Disclosed herein are a stretchable display panel and device and a manufacturing method thereof. The stretchable display panel comprises: a lower substrate having an active area and a non-active area surrounding the active area; a plurality of individual substrates disposed on the lower substrate and located in the active area; a plurality of pixels disposed on the plurality of individual substrates; and a connection line disposed between the plurality of individual substrates and the lower substrate, wherein the modulus of the plurality of individual substrates is higher than that of at least one part of the lower substrate, and wherein the connecting line extends to the bottom surface of the individual substrates, such that the connecting line electrically connects a pad disposed on the individual substrates without a step in the top surface of the connecting line. That is, the connecting line has a uniform height from the lower substrate for its entire length.

Abstract: The present disclosure relates to a solid-state imaging device, a manufacturing method of a solid-state imaging device, and an electronic device capable of preventing occurrence of a flare or a ghost caused by reflection of light in a region other than a light receiving portion of a solid-state imaging element at low cost. The solid-state imaging device includes the solid-state imaging element and a sealing glass which is arranged on the solid-state imaging element and in which a light-shielding resin is embedded in a region corresponding to the region other than the light receiving portion of the solid-state imaging element. The present disclosure is applied to, for example, a solid-state imaging device in which a substrate on which the solid-state imaging element is die-bonded and wire-bonded is packaged, or the like.

Abstract: A method of producing an optoelectronic element with a light emitting component, includes arranging a sacrificial layer at least above a part of a light emitting side of the component, forming at least in a part of an outer surface of the sacrificial layer an inverted optic structure, covering the outer surface of the sacrificial layer by a light transparent layer, transferring the inverted optic structure to an inner side of the transparent layer, and removing the sacrificial layer and forming a gap between the component and the light transparent layer, wherein the light transparent layer includes at the inner side the optic structure.

Abstract: A light emitting device comprises a detector circuit and a light emitting diode (LED) die. The LED die includes a semiconductor stack grown on a substrate. The LED includes an emitter segment formed from one segment of the semiconductor stack. The LED die includes a photosensor segment formed from another segment of the semiconductor stack. The LED die includes a segmentation layer formed between the emitter segment and the photosensor segment. The segmentation layer electrically isolates the emitter segment from the photosensor segment. The LED die includes first electrodes configured to provide power to energize the emitter segment. The LED die includes second electrodes configured to send the current to the detector circuit. The detector circuit is configured to convert the current to a signal which provides operational feedback with respect to the emitter segment.

Abstract: Light emitting diodes, components, and related methods, with improved performance over existing light emitting diodes. In some embodiments, light emitter devices included herein include a submount, a light emitter, a light affecting material, and a wavelength conversion component. Wavelength conversion components provided herein include a transparent substrate having an upper surface and a lower surface, and a phosphor compound disposed on the upper surface or lower surface, wherein the wavelength conversion component is configured to alter a wavelength of a light emitted from a light source when positioned proximate to the light source.

Abstract: In some embodiments of the invention, a device includes a semiconductor light emitting device having a first light extraction surface, a wavelength converting element, and a second light extraction surface. A majority of light extracted from the semiconductor light emitting device is extracted from the first light extraction surface. The first light extraction surface has a first area. The second light extraction surface is disposed over the first light extraction surface and has a second area. The first area is larger than the second area.

Abstract: A light emitting element is disclosed. The light emitting element includes: an LED chip including a light emitting semiconductor stack and first and second electrode pads disposed under the light emitting semiconductor stack and spaced apart from each other; a substrate mounted with the LED chip and including a first electrode corresponding to the first electrode pad and a second electrode corresponding to the second electrode pad; a first solder portion connecting the first electrode pad and the first electrode; and a second solder portion connecting the second electrode pad and the second electrode. The first solder portion and the second solder portion are formed without escaping from the mounting area of the LED chip on the substrate by heating a solder material to its melting point or above with an IR laser.

Abstract: A light emitting device according to an embodiment includes a body having a recess; a light emitting chip disposed in the recess; and a first dampproof layer sealing the light emitting chip and extended from a surface of the light emitting chip to a bottom of the recess, wherein the light emitting chip includes a wavelength range of 100 nm to 280 nm, and the first dampproof layer includes a fluororesin-based material.

Abstract: A light source apparatus includes a light source that outputs excitation light, a first wavelength converter containing a first phosphor and converts excitation light into first fluorescence having a first wavelength band, a second wavelength converter containing a second phosphor and converts excitation light into second fluorescence having a second wavelength band, a reflector reflecting second fluorescence guided in second wavelength converter, and a light guide guiding second fluorescence having exited out of second wavelength converter to first wavelength converter. A first side surface of first wavelength converter faces second side surface of second wavelength converter. The reflector is provided at the second wavelength converter's fourth end surface. The light guide has a reflection surface that faces the third end surface of the second wavelength converter and second end surface of the first wavelength converter.

Abstract: A matrix-array optoelectronic device includes a substrate on which a matrix array of what are called bottom electrodes is deposited; an active structure, which is preferably continuous and organic, arranged above the matrix-array of bottom electrodes, the structure being suitable for detecting light; and at least one what is called top electrode lying above the active structure, the top electrode being transparent to the light emitted or detected by the active structure; and at least one conductive element that is borne by the substrate without interposition of the active structure and that is connected to the top electrode by at least one vertical interconnection, the conductive element having an electrical conductivity greater than that of the top electrode. The device may also comprise a layer made of scintillator material, the layer being fastened to the top electrode, so as to form an x-ray imager.

Abstract: A manufacturing method is provided. The manufacturing method includes the following steps. Firstly, a substrate and a light-emitting component are provided, wherein the light-emitting component is disposed on the substrate. Then, a wavelength conversion layer is provided, wherein the wavelength conversion layer includes a high-density phosphor layer and a low-density phosphor layer. Then, the high-density phosphor layer is adhered to the light-emitting component by an adhesive. Then, a reflective layer is formed above the substrate, wherein the reflective layer covers a lateral surface of the light-emitting component, a lateral surface of the adhesive and a lateral surface of the wavelength conversion layer.

Abstract: The disclosure relates to a lighting device. The object to provide a lighting device comprising a light guide, wherein the amount of guided light is further optimized, is solved in that the lighting device comprises: a light-emitting element with a light-emitting face; the light guide having a light entry face, the light guide being configured to guide light emitted by the light-emitting element by means of total internal reflection; and a separator sheet comprising a first face and a second face, wherein the first face is arranged in direct contact to the light entry face, wherein the second face is arranged opposite the light-emitting face, wherein the separator sheet is arranged such that a minimum distance between the light-emitting face and the light entry face is 300 ?m or less, and wherein the separator sheet is arranged such that a gap is provided between the light-emitting element and the separator sheet at least in sections.

Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a light transmissive member having a plate shape and having an upper face and a lower face that is larger than the upper face, disposed such that the lower face opposes a light emission face of the light emitting element; a light reflecting member covering lateral faces of the light transmissive member; and a light shielding frame covering lateral faces of the light transmissive member via the light reflecting member. The light shielding frame has an opening. An outer perimeter of the lower face of the light transmissive member is positioned outward of an inner perimeter of the opening in a plan view as seen from above.

Abstract: An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is provided, as well as an optical semiconductor device using the package is also provided. The optical semiconductor element mounting package having a recessed part that serves as an optical semiconductor element mounting region, wherein the package is formed by integrating: a resin molding composed of a thermosetting light-reflecting resin composition, which forms at least the side faces of the recessed part; and at least a pair of positive and negative lead electrodes disposed opposite each other so as to form part of the bottom face of the recessed part, and there is no gap at a joint face between the resin molding and the lead electrodes.

Abstract: A phosphor-containing film suppresses deterioration of a phosphor and generation of luminescent spots and the reduction in luminance, and a backlight unit. The phosphor-containing film includes: a phosphor-containing layer having a resin layer which has oxygen impermeability and discrete concave portions, and fluorescent regions arranged in the concave portions, and a first substrate film laminated on one surface of the phosphor-containing layer and a second substrate film laminated on the opposing surface, in which the fluorescent regions contain the phosphor that deteriorates through a reaction with oxygen, and a binder, the first substrate film includes a support film and an inorganic layer provided on a surface of the support film on a side facing the phosphor-containing layer, the resin layer has a modulus of elasticity of 0.5 to 10 GPa, and a thickness of the bottom of the concave portion of the resin layer is 0.1 to 20 ?m.

Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 ?m and is not greater than 10 ?m; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.

Abstract: The present disclosure relates to a coating-type organic electroluminescent device and a display device and a lighting device including the same. The present disclosure relates to an organic electroluminescent device in which an inter-electrode layer and at least one layer of a first electrode and a second electrode can be consistently manufactured at atmospheric pressure. The organic electroluminescent device includes a first electrode, an electron injection layer facing the first electrode, and an emitting material layer located between the first electrode and the electron injection layer, wherein the emitting material layer and the electron injection layer are formable by coating.

Abstract: The present invention provides a round chip scale package comprising: a light emitting diode for providing blue light from a side surface and an upper surface thereof; and a three-dimensional fluorescent layer arranged to encompass the side surface and the upper surface of the light emitting diode, thereby converting the blue light emitted from the side surface and the upper surface of the light emitting diode into white light, wherein the three-dimensional fluorescent layer comprises a phosphor and silicon, and an edge region of the three-dimensional fluorescent layer is formed into a round shape.

Abstract: An LED module 101 is provided with an LED chip 200 that includes a sub-mount substrate 210 made of Si and a semiconductor layer 220 laminated on the sub-mount substrate 210. The module also includes white resin 280 that does not transmit light from the semiconductor layer 220 and that covers at least part of a side of the sub-mount substrate 210, where the side is connected to the surface on which the semiconductor layer 220 is laminated. These arrangements enhance the brightness of the LED module 101.

Abstract: A method for producing at at least an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a substrate having at least one aperture, applying at least one semiconductor chip to the substrate, arranging barrier structures provided that the barrier structures are not already part of the substrate, wherein the semiconductor chip is spaced apart from the barrier structures as seen in a side cross-section, applying an auxiliary carrier at least to a main radiation exit surface and to the barrier structures, introducing a casting material via the at least one aperture in the substrate so that the casting material is arranged between the barrier structures and the semiconductor chip and between the substrate and the auxiliary carrier, and curing the casting material.

Abstract: A light emitting diode (LED) display panel includes a back plate and a pixel structure, which includes multiple pixels. Each pixel includes a reflector structure and two LEDs emitting light of a same color, all disposed on the back plate. The reflector structure of each pixel has a first reflective bank structure and a second reflective bank structure. The first reflective bank structure has a first bank opening. The second reflective bank structure has a second bank opening. The two LEDs are disposed within the first and second bank openings. The first bank opening has a first shape, and the second bank opening has a second shape, which is a mirror shape or a 180° symmetrical shape of the first shape. For each of the pixels, the first shape is a polygonal shape, and at least two corners of the first shape have an included angle less than 90°.

Abstract: An embodiment discloses a semiconductor device comprising: a light-emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed below the second conductive semiconductor layer; and a current blocking layer disposed between the second conductive semiconductor layer and the second electrode, wherein the first conductive semiconductor layer includes a first region in which the first electrode is disposed and a second region, the thickness of which is less than the thickness of the first region, and the current blocking layer is disposed in a region corresponding to the first region in the thickness direction.