Abstract: Disclosed are a display substrate and a manufacturing method therefor and a display device thereof. The display substrate includes: a drive backplate, and a plurality of micro LEDs and a retaining wall structure on the drive backplate; wherein a center of a light-emitting layer in the micro LED deviates from a center of the micro LED; the retaining wall structure is of an annular shape; the retaining wall structure corresponds to at least one micro LED in the display substrate; and a center of a surrounding region of the retaining wall structure in the drive backplate is located within a circumscribing region of a region where a light-emitting layer of the at least one micro LED is located.

Abstract: A color calibration viewer used in color calibration, wherein: the relative intensity at a wavelength of 505 nm is 0.80 or more and 0.95 or less, and the relative intensity at a wavelength of 620 nm is 0.65 or more and 0.80 or less, where 1 designates the optical intensity of a peak top in a first wavelength region at a wavelength of 440 nm or more and 470 nm or less; and the ratio (A/B) of A and B is 1.00 or more and 1.46 or less, where A designates the optical intensity at a wavelength of 505 nm, and B designates the optical intensity at a wavelength of 620 nm.

Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.

Abstract: The present application provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate on which at least one light guide groove is provided, the light guide groove penetrating the substrate; and a light emitting structure disposed on one side of the substrate, the light emitting structure including at least one set of a first electrode and a second electrode. The light guide groove at least corresponds to one set of a first electrode and a second electrode to prevent bad points. A wavelength conversion dielectric layer is filled into the light guide groove to avoid a coffee ring effect and achieve uniform and full-color light emission of a light emitting device. The semiconductor structure may further save manufacturing costs and prevent crosstalk between light emitted from various light emitting units.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: A method of manufacturing a light emitting device includes: mounting a light emitting element on a substrate; disposing a light shielding frame on a sheet, the light shielding frame having an opening; disposing a plate-shaped light transmissive member in the opening, the plate-shaped light transmissive member having a first face and a second face opposite the first face, wherein an outer perimeter of the first face is smaller than an inner perimeter of the opening; forming a light guide support member by filling the space with a first light reflecting member; bonding the light guide support member by bonding an upper face of the light emitting element and the second face of the light transmissive member; and forming a second light reflecting member surrounding the light emitting element by filling the space between the substrate and the light shielding frame with a second reflecting resin.

Abstract: A display substrate includes a base substrate; and a single pixel definition layer on the base substrate defining a plurality of subpixel apertures. The single pixel definition layer includes a plurality of hydrophobic particles dispersed in a main body for enhancing hydrophobicity of a portion of the single pixel definition layer.

Abstract: A light emitting photonic crystal having an organic light emitting diode and methods of making the same are disclosed. An organic light emitting diode disposed within a photonic structure having a band-gap, or stop-band, allows the photonic structure to emit light at wavelengths occurring at the edges of the band-gap. Photonic crystal structures that provide this function may include materials having a refractive index that varies.

Abstract: A solid-state imaging device includes a solid-state imaging element and a substrate fixed to the solid-state imaging element by a sealing resin on a surface on an opposite side of a light receiving surface of the solid-state imaging element, an outer edge of the substrate seen from the light receiving surface side of the solid-state imaging element is positioned within an outer edge of the solid-state imaging element and an outer edge of the sealing resin seen from the light receiving surface side of the solid-state imaging element is positioned within the outer edge of the solid-state imaging element. The sealing resin includes a first sealing resin and a second sealing resin not contacting the first sealing resin to seal the components.

Abstract: A display device is provided. The display device includes a substrate having a first surface and a second surface opposite to the first surface, a plurality of light-emitting units disposed on the first surface of the substrate, and a plurality of conductive structures extending into the substrate from the second surface of the substrate. The plurality of conductive structures are electrically connected to the plurality of light-emitting units.

Abstract: A light-emitting device array according to an embodiment includes a plurality of light-emitting devices connected to each other, each of the light-emitting devices comprising a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a (1-1)th electrode connected to the exposed first conductive semiconductor layer; a (1-2)th electrode connected to the second conductive semiconductor layer; (2-1)th and (2-2)th electrodes connected to the (1-1)th and (1-2)th electrodes, respectively; a first bonding layer disposed between the (1-1)th electrode and the (2-1)th electrode; and a second bonding layer disposed between the (1-2)th electrode and the (2-2)th electrode wherein the (2-1)th electrode of the first light-emitting device and the (2-2)th electrode of the second light-emitting device are integrated, and the (2-2)th electrode of the first light-emitting device and the (2-1)th electrode of the second light-emitting device are integr

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly LED devices with light-altering particle arrangements are disclosed. An LED device may include an LED chip with a light-altering material arranged to redirect light in a desired emission direction. The light-altering material may include light-altering particles with a median particle size that is determined based on a wavelength of light provided by the LED chip. Such light-altering particles may be arranged proximate sidewalls of the LED chip to redirect lateral emissions. LED devices may further include lumiphoric materials and other light-altering particles arranged proximate the lumiphoric materials with a median particle size that is determined based on a wavelength of light provided by the lumiphoric materials.

Abstract: Disclosed is a liquid polymerizable composition including a chain-growth polymerization dispersing monomer, a step-growth polymerization monomer system and inorganic nanoparticles homogeneously dispersed in the monomers, as well as its use for the preparation of a transparent polymeric material having a high refractive index and low haze and its use in the optical field.

Abstract: A phosphor powder composed of ?-sialon phosphor particles containing Eu. With regard to the phosphor powder, a volume-based median diameter (D50) determined by a laser diffraction scattering method is equal to or more than 10 ?m and equal to or less than 20 ?m, and a diffuse reflectance with respect to light at a wavelength of 600 nm is equal to or more than 93% and equal to or less than 99%.

Abstract: Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

Abstract: A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15° and not more than 50°.

Abstract: Disclosed herein is an apparatus for providing conductivity. The apparatus may include an epitaxial layered structure having a first-type doped semiconductor layer, a second-type doped semiconductor layer, and an active layer between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The apparatus may also include a conductive layer adjacent to and in ohmic contact with the first-type doped semiconductor layer. The conductive layer may have a micropixellated structure comprising a plurality of micropixel contact areas that are electrically isolated from each other. The plurality of micropixel contact areas may be sized and spaced to allow multiple ones of the plurality of micropixel contact areas to overlap a single contact pad for providing charge flow for a pixel in an array of pixels formed using the epitaxial layered structure.

Abstract: To provide an organic photoelectronic element, of which the external quantum efficiency is improved, the power consumption is low and the service life is prolonged. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, and a hole transport layer provided in contact with the light emitting layer between the light emitting layer and the anode, wherein the hole transport layer contains an organic semiconductor material and a fluorinated polymer, and at the surface of the hole transport layer in contact with the light emitting layer, the fluorinated polymer is present.

Abstract: A variety of light-emitting devices for general illumination utilizing solid state light sources (e.g., light emitting diodes) are disclosed. In general, the devices include a scattering element in combination with an extractor element. The scattering element, which may include elastic and/or inelastic scattering centers, is spaced apart from the light source element. Opposite sides of the scattering element have asymmetric optical interfaces, there being a larger refractive index mismatch at the interface facing the light emitting element than the interface between the scattering element and the extractor element. Such a structure favors forward scattering of light from the scattering element. In other words, the system favors scattering out of the scattering element into the extractor element over backscattering light towards the light source element.

Abstract: A light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. The wavelength conversion layer includes a phosphor layer having a phosphor and a stress release layer without the phosphor.

Abstract: The present invention relates to a display device and, particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements comprises: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer in which the first conductive electrode is disposed; a second conductive semiconductor layer which overlaps the first conductive semiconductor layer and in which the second conductive electrode is disposed; a first passivation layer formed to cover outer surfaces of the first conductive semiconductor layer and the second conductive semiconductor layer; and a second passivation layer formed to cover the first passivation layer and formed such that at least a portion thereof varies in thickness.

Abstract: A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

Abstract: A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Abstract: An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.

Abstract: A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.

Abstract: A method of micro-devices transfer comprising following steps of: providing a flexible carrier including a plurality of grooves which are designed in positions corresponding one-to-one to a plurality of target surface portions of an outer surface of a target member, each of the grooves has an opening in a first surface of the flexible carrier; applying at least one external force to the flexible carrier such that the opening of each of the grooves is enlarged; placing a plurality of micro-devices in the grooves respectively; releasing the at least one external force such that the micro-devices are held by the grooves of the flexible carrier and auto-aligned in positions corresponding one-to-one to the target surface portions of the outer surface of the target member; aligning and bonding the micro-devices to the target surface portions of the outer surface of the target member; and removing the flexible carrier.

Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1<n2 and n2>n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.

Abstract: The invention describes a light conversion device having a light converter, which is adapted to convert primary light to converted light, so that a peak emission wavelength of the converted light is in a longer wavelength range than a peak emission wavelength of the primary light. The light conversion device also has a reflective structure coupled to at least a part of a coupling surface of the light converter, where the reflective structure is a narrowband reflector arranged to reflect at least some of the primary light impinging on the reflective structure and to transmit at least some of the converted light impinging on the reflective structure.

Abstract: Multi-phase polymer films containing quantum dots (QDs) are described herein. The films have domains of primarily hydrophobic polymer and domains of primarily hydrophilic polymer. QDs, being generally more stable within a hydrophobic matrix, are dispersed primarily within the hydrophobic domains of the films. The hydrophilic domains tend to be effective at excluding oxygen.

Abstract: An LED module includes a first metal layer disposed on a base surface and an LED chip disposed on the first metal layer. The first metal layer includes a first end portion forming a contour away from the base surface, and a curved portion between a region overlapping the LED chip and the first end portion.

Abstract: A chip-scale packaging (CSP) light-emitting device (LED) is provided with an electrode polarity identifier, and includes a light-emitting semiconductor chip and a packaging structure. A first horizontal direction and a perpendicular second horizontal direction are specified on a semiconductor-chip-upper surface. The packaging structure covers the semiconductor-chip-upper surface, a first semiconductor-chip-side surface and a second semiconductor-chip-side surface of the light-emitting semiconductor chip, and includes a first package-side surface and a second package-side surface. A first region is between the first package-side surface and the first semiconductor-chip-side surface, and a second region is between the second package-side surface and the second semiconductor-chip-side surface, wherein an area of the first region is different from an area of the second region.

Abstract: A light emitting device package according to an embodiment may include first and second frames, a body, a light emitting device, first and second conductive parts, and first and second conductors. According to the embodiment, first and second frames may be spaced apart from each other and include first and second openings, respectively. The body may be disposed between the first and second frames. The light emitting device may be disposed on the body and include first and second bonding parts. The first and second conductive parts may be disposed under the first and second bonding parts. The first and second conductors may be disposed in the first and second openings, respectively. According to the embodiment, the first and second conductive parts may extend into the first and second openings from the first and second bonding parts, respectively, and the first and second conductors may be disposed between the first and second conductive parts and the first and second frames, respectively.

Abstract: A luminophore may have the general empirical formula X3A7Z3O11:E, where: X=Mg, Ca, Sr, Ba, and/or Zn; A=Li, Na, K, Rb, Cs, Cu, and/or Ag; Z=Al, Ga, and/or B; and E=Eu, Ce, Yb, and/or Mn.

Abstract: Disclosed herein are a backlight unit and a display device using the same. In an embodiment, the backlight unit includes a substrate, at least one light source on the substrate, a lenses placed over the light source, a reflection sheet in which at least one through hole corresponding to the lens is formed, and a reflection ring comprising an opening portion corresponding to the at least one light source, and placed between the lens and the substrate. In accordance with an embodiment of the present invention, luminance uniformity of the backlight unit can be improved because the reflection ring surrounding the light source is included.

Abstract: A micro light emitting diode (LED), including a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped with a p-type dopant; an active layer arranged between the first semiconductor layer and the second semiconductor layer, and configured to provide light; a first side surface including a vertical side surface of the first semiconductor layer; a second side surface tilted with respect to the first side surface, and including a first tilted side surface of the active layer and a second tilted side surface of the second semiconductor layer; an insulating layer arranged to surround the first side surface and the second side surface; and a reflective layer arranged to partially surround the insulating layer in an area of the insulating layer corresponding to the second side surface.

Abstract: The disclosure discloses a method for manufacturing light-emitting diode (LED) chips. The manufacturing method includes: providing a plurality of LED elements; randomly mixing the plurality of LED elements; performing a mesa process on the plurality of LED elements; and forming at least one pair of electrodes on the plurality of LED elements. An electronic device includes the LED chips.

Abstract: Provided are a method for manufacturing wavelength conversion members that enables manufacturing of wavelength conversion members having a high light extraction efficiency and suppression of material loss, a wavelength conversion member obtained by the method, and a light-emitting device.

Abstract: A lighting device is provided. The lighting device includes a carrier, a light-emitting diode chip, and a wavelength up-conversion structure. The light-emitting diode chip is disposed on the carrier and is configured to emit a first light, which has a peak wavelength between 800 nm and 1000 nm. The wavelength up-conversion structure is disposed on the light-emitting diode chip and is configured to convert part of the first light into a second light, which has a converted spectrum between 400 nm and 700 nm.

Abstract: A flexible display device includes: a bendable display panel; a protective layer on a surface of the display panel; and an elastic layer on the first surface of the protective layer. The protective layer has a groove in a first surface thereof, and the elastic layer is in the groove in the protective layer.

Abstract: Provided is a wavelength conversion member that can be adjusted in chromaticity readily and with high accuracy and a production method for the wavelength conversion member. A wavelength conversion member 1 having a first principal surface 1a and a second principal surface 1b opposed to each other includes a glass matrix 2 and phosphor particles 3 disposed in the glass matrix 2, wherein a concentration of the phosphor particles 3 in the first principal surface 1a is higher than a concentration of the phosphor particles 3 in a portion 20 ?m inward from the first principal surface 1a, a concentration of the phosphor particles 3 in the second principal surface 1b is lower than a concentration of the phosphor particles 3 in a portion 20 ?m inward from the second principal surface 1b, and the concentration of the phosphor particles 3 in the first principal surface 1a is higher than the concentration of the phosphor particles 3 in the second principal surface 1b.

Abstract: A nano-structure layer is disclosed. The nano-structure layer includes an array of nano-structure material configured to receive a first light beam at a first angle of incidence and to emit the first light beam at a second angle greater than the first angle, the nano-structure material each having a largest dimension of less than 1000 nm.

Abstract: A confocal range sensing (CRS) system is provided including a wavelength detector, source light configuration, and one or more measurement channels. Each measurement channel is configured to sense a respective distance to a workpiece surface and includes a confocal detection aperture and confocal light source aperture. The source light configuration includes first and second phosphor compositions, a wavelength combining configuration, and a shared source light path. The first and second phosphor compositions are located in separate respective first and second phosphor regions. As part of workpiece height measurement operations, the first and second phosphor compositions emit first and second emitted light, respectively, to the wavelength combining configuration which outputs first and second emitted light along the shared source light path as source light (i.e.

Abstract: A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection. Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

Abstract: The present disclosure provides an image sensor including a substrate (400) and at least one pixel unit. The pixel unit comprises a photodetector (401) arranged in the substrate, a photosensitive surface of the photodetector facing a back surface of the substrate to generate a charge upon receiving an incident light from the back surface of the substrate, a spherical crown structure (406) arranged on the substrate and located on an opposite surface of the photosensitive surface, a conformal dielectric layer (420) arranged on the spherical crown structure and used to generate a dielectric-layer reflective light when the incident light reaches the conformal dielectric layer, and a reflective layer (430) arranged on the conformal dielectric layer and used to generate a reflective-layer reflective light when the incident light reaches the reflective layer. In this way, an absorption ratio for the incident light is increased, thereby improving signal quality of an image.

Abstract: The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectric conversion of incoming light; a cover glass that protects a top surface side serving as a light incidence surface of the light receiving sensor; a frame that is disposed in an outer peripheral portion between the light receiving sensor and the cover glass, and is formed with use of an inorganic material; and an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame. The present technology is applicable to, for example, an imaging element having a CSP structure, and the like.

Abstract: A light emitting element according to an embodiment includes: a light emitting portion mounted on a PCB and configured to emit light; a light shield portion spaced from the PCB and having an opening that is formed at a location corresponding to the light emitting portion and passes light emitted from the light emitting portion; a sealing portion positioned between the light shield portion and the PCB and configured to prevent light emitted from the light emitting portion from leaking between the light shield portion and the PCB; and a transmission portion contacting one surface of the light shield portion and configured to transmit light, the one surface facing a direction away from the light emitting portion, wherein the opening has an inclined surface that is an outer circumferential surface located at one end of the opening in the direction away from the light emitting portion and widened in the direction away from the light emitting portion such that spread of light that passed through the opening is prev

Abstract: A flip-chip light-emitting module includes a thermal dissipation substrate, a package assembly, and a light-emitting chip. The package assembly includes a frame surrounding the thermal dissipation substrate, and a lens unit disposed on the frame. The frame includes a conductive path. The light-emitting chip is disposed on the thermal dissipation substrate, and includes a top conductive contact and a light-emitting surface at the same side. The top conductive contact is electrically connected with the conductive path by a conductor.

Abstract: Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.

Abstract: A semiconductor light emitting device includes a light emitting diode (LED) chip, a recipient luminophoric medium on the LED chip, a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned superstrate on the recipient luminophoric medium opposite the LED chip, the patterned superstrate comprising a patterned surface that is configured to reduce a variation in a color point of a light emitted by the semiconductor light emitting device as a function of an angle off an optical axis of the LED chip.

Abstract: A display device having a light-emitting device is provided. The display device can include a buffer insulating layer disposed on a path of light emitted from the light-emitting device. The buffer insulating layer can have a stacked structure of a first buffer insulating layer having the refractive index which decreases in a direction away from the light-emitting device, and a second buffer insulating layer having the refractive index which increases in a direction away from the light-emitting device. Thus, in the display device, the unintended constructive and destructive interference of the light emitted from the light-emitting device can be prevented. Therefore, in the display device, the luminous efficacy can be increased, and the variation of color coordinates can be prevented.