Abstract: An LED filament light including a bulb, a support bar, at least two electrode wires and at least two LED filament strips. Each LED filament strip including a base, an LED chip is set on the base and an electrode is fixed at both ends of the base. One end of the electrode is electrically connected with an LED chip on the base, the other end of the electrode is electrically connected with an electrode of another LED filament or electrically connected to one end of the electrode wires so that the support bar is fixed to the bulb, and the other end is connected with at least one. As the support bar is set to replace the existing LED filament light core and metal wire, and creatively the LED filament electrodes directly is connected to each other.

Abstract: A touch display device includes a display panel including a plurality of first pixels and a plurality of second pixels alternately disposed along a first direction, and a touch screen layer disposed on the display panel, the touch screen layer including a plurality of first touch electrodes having a zigzag shape and disposed between one of the first and second pixels along a second direction crossing the first direction, in which a first pixel of the first pixels and a second pixel of the second pixels have different sizes from each other, and a first distance from a first touch electrode of the first touch electrodes to the first pixel is different from a second distance from the first touch electrode to the second pixel.

Abstract: The light emitting structure of the present invention includes a sheet-shaped structure which absorbs excitation light and emits light with wavelength conversion and which has a maximum emission wavelength of 400 nm or more; and an antireflection material provided on a side surface of the sheet-shaped structure.

Abstract: A LED structure, a lighting fixture and a method of providing white light illumination. The LED structure comprises a substrate; a light emitting area defined on the substrate as a cavity; a first type of light emitting semiconductor source with bactericidal characteristics mounted in the cavity; a second type of light emitting semiconductor source mounted in the cavity with ability to excite the wavelength conversion material to generate white light; and a wavelength conversion material layer formed on top of the light emitting semiconductor sources. The invention enables disinfection by a lighting source or a luminaire visibly apparent to human as a white light source that is neither harmful to a human nor creates discomfort.

Abstract: A method for manufacturing a plurality of surface mounted optoelectronic devices and a surface mounted optoelectronic device are disclosed. In an embodiment, a surface mounted optoelectronic device includes a transparent base body having a mounting rear side, a radiation exit side opposite the mounting rear side, and mounting side surfaces which are each disposed transversely to the radiation exit side, a semiconductor layer sequence disposed laterally to at least one mounting side surface and a terminal contact extending from the at least one mounting side surface to the mounting rear side, wherein the semiconductor layer sequence includes an active region configured to emit radiation so that the radiation decouples from the surface mounted optoelectronic device via the radiation exit side of the base body.

Abstract: An optical sensor includes a bare chip mounted on a circuit board, a protection member configured to protect the bare chip, a pad connected to the bare chip via a wire, and a pattern connecting the pad and a terminal portion at an edge of the circuit board to each other. The pattern is connected to the terminal portion on a same surface as a surface on which the bare chip is mounted, and a portion of the pattern between the protection member and the terminal portion is covered with solder resist.

Abstract: Briefly, in one aspect, the present invention relates to processes for producing a stabilized Mn4+ doped phosphor in solid form and a composition containing such doped phosphor. Such process may include combining a) a solution comprising at least one substance selected from the group consisting of: K2HPO4, an aluminum phosphate, oxalic acid, phosphoric acid, a surfactant, a chelating agent, or a combination thereof, with b) a Mn4+ doped phosphor of formula I in solid form, where formula I may be: Ax [MFy]:Mn4+. The process can further include isolating the stabilized Mn4+ doped phosphor in solid form. In formula I, A may be Li, Na, K, Rb, Cs, or a combination thereof. In formula I, M may be Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof. In formula I, x is the absolute value of the charge of the [MFy] ion and y is 5, 6 or 7.

Abstract: A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.

Abstract: The light emitting device package disclosed in an embodiment of the invention includes first and second frames; a body disposed between the first and second frames; and a light emitting device disposed on the first and second frames, wherein the first frame includes a first end portion adjacent to the second frame, and the second frame includes a second end portion adjacent to the first frame and facing the first end portion, wherein the first end portion includes a first protruding portion protruding toward the second frame, and the second end portion includes a second protruding portion protruding toward the first frame. The light emitting device may include a first bonding portion disposed on the first protruding portion and a second bonding portion disposed on the second protruding portion.

Abstract: A circuit backplane of a display panel, a method for manufacturing the same, and a display panel are provided. The circuit backplane includes a substrate and a plurality of circuit regions on the substrate. Each of the plurality of circuit regions includes a cathode soldered electrode, an anode soldered electrode, and a flow blocking island that are on the substrate. The flow blocking island is between the cathode soldered electrode and the anode soldered electrode, and in a thickness direction of the circuit backplane, a height of the flow blocking island is greater than each of a height of the cathode soldered electrode and a height of the anode soldered electrode.

Abstract: A semiconductor laser device includes: a package includes a recess and an upper surface that has an outer peripheral surface and a bonding surface positioned between the recess and the outer peripheral surface, the bonding surface having inner corners on the recess side and outer corners on the outer peripheral surface side; at least one semiconductor laser element disposed in the recess of the package; and a light-transmissive member bonded to the bonding surface of the package. The radius of curvature of inner corners is greater than the radius of curvature of outer corners.

Abstract: A light apparatus for generating a mixed light output. The light apparatus includes multiple LED modules. Each LED module includes multiple LED regions. The multiple LED regions cover a single LED chip. The multiple LED regions share the same package for emitting lights with different optical characteristics.

Abstract: An apparatus includes a substrate transmissive of electromagnetic energy of at least a plurality of wavelengths, having a first end, a second end, a first major face, a second major face, at least one edge, a length, a width, and a thickness, at least a first nanostructure that selectively extracts electromagnetic energy of a first set of wavelengths from the substrate; and an input optic oriented and positioned to provide electromagnetic energy into the substrate via at least one of the first or the second major face of the substrate. Nanostructures can take the form of photonic crystal arrays, a plasmonic structure arrays, or holographic diffraction gratings. The apparatus may be part of a spectrometer.

Abstract: A phosphor component that includes a plurality of nanowires absorbing light at one wavelength and emitting light at a longer wavelength, the longer wavelength being from about 495 nm to about 780 nm, each one of the plurality of nanowires being one of a nanowire described by a composition formula of InxGa1-xN, x being between about 0.1 to about 0.6 or a GaN nanowire having InxGa1-xN discs in a nanowire structure, x being between about 0.1 to about 0.8 and a light emitting device using the phosphor component are disclosed.

Abstract: A light emitting diode (LED) package structure is provided and includes a substrate, an LED chip and a reflective component. The substrate has a first and a second region, and the substrate includes at least one electrode pad disposed on the second region. The LED chip is disposed on the substrate and has a chip upper surface with a light emitting region and a wire bonding region. The LED chip includes at least one electrode contact located at the wire bonding region and is electrically connected to the at least one electrode pad via a metal wire. The reflective component includes a first portion and a second portion. The first portion includes a first surface flush with the light emitting region and the second portion includes a second surface above a highest point of the metal wire.

Abstract: The device includes a substrate, a green light emitting element on the substrate, and a green color film layer disposed on a light exit side of the green light emitting element correspondingly, a travel distance of the light emitted from the green light emitting element in the green color film layer remains substantially unchanged with a change of a light exit angle of the light. Thus, the present disclosure can prevent a color purity of a green light passing through the green color film layer from changing, thereby improving the color shift performance of a green light passing through the green color film layer, and improving the optical performance of the green light, and thus further improving the display effect of the device and the display panel.

Abstract: A deep ultraviolet light-emitting element of this disclosure includes, in this order, an n-type semiconductor layer; a light-emitting layer; and a p-type semiconductor layer. An emission spectrum of the deep ultraviolet light-emitting element has a primary emission peak wavelength in a wavelength range of 200 nm or more and 350 nm or less, and a blue-violet secondary light emission component having a relative emission intensity of 0.03% to 10% across a wavelength range of 430 to 450 nm, a yellow-green secondary light emission component having a relative emission intensity of 0.03 to 10% across a wavelength range of 540 to 580 nm, when the relative emission intensities are expressed relative to an emission intensity at the primary emission peak wavelength taken as 100%. The ratio of an emission intensity at a wavelength of 435 nm to an emission intensity at a wavelength of 560 nm is 0.5 to 2.

Abstract: A method of manufacturing a light-emitting device includes: placing a light-emitting element; providing a light-shielding frame; supplying a light-reflective resin; providing a light-transmissive member; forming an optical member; and bonding an upper surface of the light-emitting element and a surface of the light-transmissive member with each other.

Abstract: Light emitting diode (LED) constructions comprise an LED having a pair of electrical contacts along a bottom surface. A lens is disposed over the LED and covers a portion of the LED bottom surface. A pair of electrical terminals is connected with respective LED contacts, are sized larger than the contacts, and connect with the lens material along the LED bottom surface. A wavelength converting material may be interposed between the LED and the lens. LED constructions may comprise a number of LEDs, where the light emitted by each LED differs from one another by about 2.5 nm or less. LED constructions are made by attaching 2 or more LEDs to a common wafer by adhesive layer, forming a lens on a wafer level over each LED to provide a rigid structure, removing the common wafer, forming the electrical contacts on a wafer level, and then separating the LEDs.

Abstract: A light source system or apparatus configured with an infrared illumination source includes a gallium and nitrogen containing laser diode based white light source. The light source system includes a first pathway configured to direct directional electromagnetic radiation from the gallium and nitrogen containing laser diode to a first wavelength converter and to output a white light emission. In some embodiments infrared emitting laser diodes are included to generate the infrared illumination. In some embodiments infrared emitting wavelength converter members are included to generate the infrared illumination. In some embodiments a second wavelength converter is optically excited by a UV or blue emitting gallium and nitrogen containing laser diode, a laser diode operating in the long wavelength visible spectrum such as a green laser diode or a red laser diode, by a near infrared emitting laser diode, by the white light emission produced by the first wavelength converter, or by some combination thereof.

Abstract: Provided is a display apparatus including: a liquid crystal panel configured to display an image; a light guide plate configured to guide light toward the liquid crystal panel; and a light source positioned adjacent to a side of the light guide plate, wherein the light guide plate includes a substrate having transparency, and a plurality of quantum dot capsules dispersed inside the substrate to change a color of light emitted from the light source.

Abstract: A mechanically stable main body having a cutout, into which an ESD protection element is at least partly embedded and mechanically fixed by means of a connection means. Electrical terminals of the protection element are connected to terminal pads on the top side of the main body by way of a structured metallic layer bearing on main body and protection element.

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

Abstract: A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.

Abstract: The invention provides an OLED display panel and manufacturing method thereof. The manufacturing method of OLED display panel of the invention forms a first scattering layer on the thin film encapsulation layer, a quantum dot layer on the first scattering layer, and a second scattering layer on the quantum dot layer. The first scattering layer extracts light from the OLED device, so that the light totally reflected by OLED device through thin film encapsulation layer is emitted as much as possible; the light extracted by the first scattering layer reaches the quantum dot layer. The quantum dots are excited to perform light color matching to emit light of desired color. Since the light excited by quantum dot layer is dispersed, the second scattering layer extracts the light excited by the quantum dot layer in an orderly manner, so that the OLED display panel emits light uniformly, thereby improving luminous efficiency.

Abstract: A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element.

Abstract: A light emitting diode (LED) device may include an LED die having a first surface on a substrate. A first phosphor layer may be formed on a second surface and sides of the LED die. The second surface may be opposite the first surface. A second phosphor layer may be formed on the first phosphor layer. The second phosphor layer may have a peak emission wavelength (Lpk2) located between a peak emission wavelength of the LED die (LpkD) and a peak emission wavelength of the first phosphor layer (Lpk2).

Abstract: A semiconductor device according to the present invention includes a mount substrate, an adhesive applied to the mount substrate, and a device having its lower surface bonded to the mount substrate with the adhesive. The surface roughness of a side surface upper portion of the device is lower than that of a side surface lower portion of the device.

Abstract: An organic light emitting display device includes a substrate with a first emitting region adjacent a second emitting region, a first anode in the first emitting region, a first organic light emitting layer on the first anode, a second anode in the second emitting region, and a second organic light emitting layer on a part of the first anode and the second anode. The second organic light emitting layer includes a material different from the first organic light emitting layer.

Abstract: A semiconductor light emitting element according to an embodiment of the present disclosure includes: a n-type semiconductor layer; a p-type semiconductor layer formed in a first region on the n-type semiconductor layer; a p-type electrode formed on the p-type semiconductor layer; a n-type electrode formed in a second region different from the first region on the n-type semiconductor layer; and a magnetic layer formed under the n-type semiconductor layer.

Abstract: A package for mounting a light emitting element includes: a first lead electrode having, in a plan view, a first region, a second region surrounding a periphery of the first region having a width of 110 ?m or more and a thickness greater than that of the first region, and a third region partially surrounding a periphery of the second region and having a thickness smaller than that of the second region; a second lead electrode spaced apart from the first lead electrode; and a resin molded body fixing a portion of each of the first and second lead electrodes. A portion of each of the first and second lead electrodes and a portion of the resin molded body exposed therebetween form a bottom surface of a recess.

Abstract: A proximity sensor includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate has opposite top and bottom surfaces. The light source faces toward the bottom surface of the substrate. The finger electrode is located on the top surface of the substrate, and has finger portions and gaps between every two adjacent finger portions. The active layer covers the finger electrode, and is located in the gaps. The transparent electrode layer is located on the active layer. When the light source emits light, the light through the gaps sequentially passes through the active layer and the transparent electrode layer onto a reflective surface. The light is reflected by the reflective surface to form reflected light, and the reflected light passes through the transparent electrode layer and is received by the active layer.

Abstract: A heat dissipation device may be formed having at least one isotropic thermally conductive section (uniformly high thermal conductivity in all directions) and at least one anisotropic thermally conductive section (high thermal conductivity in at least one direction and low thermal conductivity in at least one other direction). The heat dissipation device may be thermally coupled to a plurality of integrated circuit devices such that at least a portion of the isotropic thermally conductive section(s) and/or the anisotropic thermally conductive section(s) is positioned over at least one integrated circuit device.

Abstract: An organic light-emitting display panel and a fabrication method thereof are provided. The organic light-emitting display panel comprises a substrate; an organic light-emitting device disposed on a side of the substrate, wherein the organic light-emitting device has a first side facing the substrate and an opposing side; and an encapsulation layer disposed on the opposing side of the organic light-emitting device. The encapsulation layer includes at least one organic encapsulation layer, and the at least organic encapsulating layer has a polymer network of cross-linked polyorganosiloxane.

Abstract: A semiconductor device according to an embodiment includes a nitride semiconductor layer; an insulating layer; a first region disposed between the nitride semiconductor layer and the insulating layer and containing at least one element of hydrogen and deuterium; and a second region disposed in the nitride semiconductor layer, adjacent to the first region, and containing fluorine.

Abstract: A package includes a first die, a second die, a semiconductor frame, and a reinforcement structure. The first di has a first surface and a second surface opposite to the first surface. The first die includes grooves on the first surface. The second die and the semiconductor frame are disposed side by side over the first surface of the first die. The semiconductor frame has at least one notch exposing the grooves of the first die. The reinforcement structure is disposed on the second surface of the first die. The reinforcement structure includes a first portion aligned with the grooves.

Abstract: A method for manufacturing a light-emitting device includes: a mounting step; a light-shielding frame placement step; a light-transmissive member placement step; a light-guiding supporting member formation step; a light-guiding supporting member bonding step; and a second light-reflective member formation step.

Abstract: The present disclosure provides a full-color display module with microcavity effect. The full-color display module includes a glass substrate, a thin film transistor layer, an anode layer, a cathode layer, a white light emitting layer and a resonant cavity structure. The resonant cavity structure includes a first transparent organic layer, a first semi-reflective metal layer, a second transparent organic layer and a second semi-reflective metal layer, which are sequentially formed on the cathode layer, and the lights at specific wavelengths are strengthened by adjusting thicknesses of the transparent organic layers.

Abstract: Cantilevered waveguides suspended above an air cavity in an underlying substrate are described. The waveguide is formed by patterning a waveguide layer in some embodiments, and the air cavity is formed by etching the substrate beneath the waveguide. The topside of the air cavity may be sealed by filling the openings used to etch the cavity with a sealant, such as optical epoxy. In some embodiments, the waveguide is a facet coupler, positioned at a chip facet.

Abstract: An electro-optical device includes a display region and a peripheral region, and includes a first substrate including a pixel electrode being disposed in the display region and having translucency, a transistor being disposed in the display region and being electrically coupled to the pixel electrode, a second substrate including a common electrode, and an electro-optical layer being arranged between the pixel electrode and the common electrode, wherein the first substrate or the second substrate includes a first layer having translucency and an insulating property, a second layer having translucency and an insulating property, and being disposed closer to the electro-optical layer than the first layer is, and a light shielding film being arranged between the first layer and the second layer and including tungsten, and the light shielding film includes a concave surface being in contact with the second layer.

Abstract: A liquid crystal display includes a backlight layer, a colorless region, and a backlight layer. The backlight layer is configured to have a first light-transmission hole. The colorless region is provided between a liquid crystal layer and an outer polarizing layer, and corresponds to the first light-transmission hole. The backlight is disposed at the first light-transmission hole and its light is projected on liquid crystal display and corresponds to the colorless region.

Abstract: Methods, apparatus and systems are described. An apparatus includes a module body made of a polymer material. The module body includes a mounting surface adjacent a potting area. At least two lead frame elements are embedded in the polymer material of the module body. Each of the at least two lead frame elements has a first terminal side and a second terminal side in the component potting area. An LED element is on the mounting surface of the module body and electrically coupled to the first terminal side of the at least two lead frame elements.

Abstract: A light source device according to the present disclosure includes a light-emitting body configured to emit first wavelength range light, a wavelength converter that includes an incident surface on which the first wavelength range light is incident, and an emission surface configured to convert the first wavelength range light to second wavelength range light and subsequently emit, and for which the incident surface is set to be larger than the emission surface, a light collector including a light input part configured to enter the second wavelength range light, and a scattering part disposed on the emission surface of the wavelength converter or on a side closer to the light collector than the emission surface, wherein the light collector includes a reflective layer configured to reflect the second wavelength range light entered by the light input part.

Abstract: The present disclosure relates to an imaging element, a fabrication method, and electronic equipment by which an image having higher picture quality can be imaged. The imaging element includes a first light absorbing film formed in an effective pixel peripheral region, the effective pixel peripheral region being provided so as to enclose an outer side of an effective pixel region in which a plurality of pixels is disposed in a matrix, so as to cover a semiconductor substrate, a microlens layer provided as an upper layer than the first light absorbing film and having a microlens formed so as to condense light for each of the pixels in the effective pixel region, and a second light absorbing film provided as an upper layer than the microlens layer and formed in the effective pixel peripheral region. The present technology can be applied, for example, to a CMOS image sensor.

Abstract: A display panel includes a first substrate used to connect with at least one other substrate, a plurality of first light-emitting elements and a first patterned conductive layer. The first substrate includes a first light output surface and a first sidewall connecting to the first light output surface, wherein the first sidewall forms a non-180° angle with the first light output surface. The plurality of first light-emitting elements are disposed on the first light output surface. The first patterned conductive layer is disposed on the first sidewall.

Abstract: A light emitting device includes a mounting board, light sources, a light diffuser, a wavelength conversion layer, and scatter reflection portions. Each of the light sources has an upper face on which a light reflecting layer is disposed. The light diffuser is arranged above the plurality of light sources. The wavelength conversion layer is located at least between the light sources and the light diffuser. The wavelength conversion layer is configured to absorb at least a portion of light from the light sources and to emit light having a wavelength which is different from a wavelength of the light from the light sources. The scatter reflection portions are arranged on a surface of the wavelength conversion layer that is closer to the light diffuser. Each of the scatter reflection portions is arranged above at least a portion of the upper face of a corresponding one of the light sources.

Abstract: A display device includes a display layer having a plurality of organic light-emitting diodes (OLEDs) and an encapsulation layer covering a light-emitting side of the display layer. The encapsulation layer includes a plurality of first polymer projections on display layer, the plurality of first polymer projections having spaces therebetween, and a first dielectric layer conformally covering the plurality of first polymer projections and any exposed underlying surface in the spaces between the first polymer projections, the dielectric layer forming side walls along sides of the first polymer projections and defining wells in spaces between the side walls.

Abstract: LED packages and LED displays utilizing the LED packages are disclosed where the peak emission of the LED display can be tilted or shifted to customize its peak emission to the mounting height or location of the LED display. One embodiment of an LED display comprises a plurality of LED package where the peak emission from at least some of the LED packages is tilted off the package centerline. The LED packages are mounted within the display in such a way as to generate an image having a peak emission that is tilted off the perpendicular emission direction of the display.

Abstract: A semiconductor device package includes a carrier, a semiconductor device, a lid, a conductive post, a first patterned conductive layer, a conductive element disposed between the first conductive post and the first patterned conductive layer, and an adhesive layer disposed between the lid and the carrier. The conductive post is electrically connected to the first patterned conductive layer. The semiconductor device is electrically connected to the first patterned conductive layer. The lid is disposed on the carrier, and the lid includes a second patterned conductive layer electrically connected to the first conductive post.

Abstract: A linear multi-color LED illumination device that produces uniform color throughout the output light beam without the use of excessively large optics or optical losses is disclosed herein. Embodiments for improving color mixing in the linear illumination device include, but are not limited to, a shallow dome encapsulating a plurality of emission LEDs within an emitter module, a unique arrangement of a plurality of such emitter modules in a linear light form factor, and special reflectors designed to improve color mixing between the plurality of emitter modules. In addition to improved color mixing, the illumination device includes a light detector and optical feedback for maintaining precise and uniform color over time and/or with changes in temperature. The light detector is encapsulated within the shallow dome along with the emission LEDs and is positioned to capture the greatest amount of light reflected by the dome from the LED having the shortest emission wavelength.