Abstract: An integrated circuit package system is provided including forming a substrate with a device thereover, forming an encapsulation having a planar top surface to cover the device and the substrate spanning to an extraction side of the encapsulation, and forming a recess in the encapsulation from the planar top surface.

Abstract: A semiconductor device including: a semiconductor chip; a plurality of electrodes formed on the semiconductor chip and arranged along one side of the semiconductor chip; a resin protrusion formed on the semiconductor chip and extending in a direction which intersects the side; and a plurality of electrical connection sections formed on the resin protrusion and electrically connected to the respective electrodes.

Abstract: The present invention provides a semiconductor chip that provides a semiconductor device with high reliability and low leak current, and a method of manufacturing such a semiconductor chip, and more specifically, provides a semiconductor chip comprising memory portions and a peripheral circuit portion, where the memory portions and the peripheral circuit portion are formed in a main surface portion of the semiconductor chip, a thickness of the sections of the semiconductor chip passing through the main surface portion in which the memory portions are formed is larger than a thickness of sections of the semiconductor chip passing through the main surface portion in which the peripheral circuit portion is formed, and a method of manufacturing such a semiconductor chip.

Abstract: A combination includes a first chip package unit and a second chip package unit on which the first chip package unit is placed. Each of the first and second chip package units includes a substrate having a first surface, a second surface, a chip package electrically connected to the first surface, and a plurality of bonding pads formed on the first and second surfaces. The bonding pads on the first surface of the first chip package unit are respectively electrically connected with the bonding pads on the surface of the second chip package unit. The chip packages electrically connected to the first surfaces are enclosed by the substrates, and the bonding pads on the second surfaces are configured as interface terminals of the combination.

Abstract: A MEMS package and methods for its embodiment are described. The MEMS package has at least one MEMS device mounted on a flexible and foldable substrate. A metal cap structure surrounds the at least one MEMS device wherein an edge surface of the metal cap structure is attached to the flexible substrate and wherein a portion of the flexible substrate is folded under itself thereby forming the MEMS package. A meshed metal environmental hole underlying the at least one MEMS device provides enhanced EMI immunity.

Abstract: An element is mounted on a carrier by removing an oxide film sufficiently. An element mounting method in which electrodes of the element are fusion bonded to electrodes of the carrier so that the element is mounted on the carrier, the method includes the steps of: positioning the electrodes of the element at electrodes of carrier respectively, one of the electrodes of the carrier being a striped electrode in an arc shape formed on a concentric circle centered on one of the electrodes of the element, and another being a center electrode formed near the center location of the concentric circle; and then rubbing the striped electrode of the carrier and an electrode of the element together in a direction of the concentric circle centered the center electrode so as to fusion bond the electrodes.

Abstract: A spaced, bumped component structure including a first plate, a second plate spaced from the first plate by a first gap, a plurality of solder bumps interconnecting the plates and defining the first gap; at least one of the plates having an anomalous section including one of a raised platform and recess for defining a second gap having a different size from the first gap.

Abstract: An integrated circuit arrangement including a nonplanar substrate on which an integrated circuit is formed on at least one side, wherein the side of the substrate which has the integrated circuit is arranged on a carrier and the carrier is produced from a chemically resistant material.

Abstract: Methods for making a microelectronic component including a plurality of conductive posts extending and projecting away from a flexible substrate, wherein at least some of the conductive posts are electrically connected to a plurality of traces exposed on the flexible substrate.

Abstract: A carrier structure for a semiconductor chip and a method for manufacturing the same are disclosed. The method includes the following steps: providing a carrier board having at least one through cavity, wherein a removable film is formed on the surface of the carrier board, and a semiconductor chip is temporarily fixed in the through cavity by the removable film; filling the gap between the through cavity of the carrier board and the semiconductor chip with an adhesive material in order to fix the semiconductor chip; and removing the removable film. The disclosed method can reduce the alignment error resulted from the tiny shift of the semiconductor chip caused by jitters before the semiconductor is fixed in the cavity, thereby to increase the accuracy of the alignment, to facilitate fine wiring, and to meet the trend toward compact size of semiconductor packages.

Abstract: Provided is a thin semiconductor package comprising a semiconductor chip and a lead frame, the lead frame including a paddle portion configured for mounting the semiconductor chip in a manner that exposes bonding pads within an aperture formed in a center portion of the lead frame and a peripheral terminal pad portion for establishing external contacts. A plurality of bonding wires are used to establish electrical connection between a lower surface of the paddle part and corresponding bonding pads with intermediate leads providing connection to the terminal pad portions. The semiconductor chip, lead frame and bonding wires may then be encapsulated to form a thin semiconductor package having a thickness substantially equal to that of the terminal pad portions. The thin semiconductor packages may, in turn, be used to form multi-chip stack packages using known good semiconductor chips to form a high-density compound semiconductor packages.

Abstract: An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.

Abstract: An aspect of the present invention features a manufacturing method of a package on package with a cavity. The method can comprise (a) forming a first upper substrate cavity in one side of an upper substrate; (b) mounting an upper semiconductor chip on the other side of the upper substrate; (c) forming a lower substrate cavity in one side of a lower substrate; (d) mounting a lower semiconductor chip in the lower substrate cavity formed in the lower substrate; and (e) stacking the upper substrate above the lower substrate such that the first upper substrate cavity accommodates a part of the lower semiconductor chip. The package on package and a manufacturing method thereof can reduce the overall thickness of the package by forming cavities in both upper and lower substrates to accommodate a semiconductor chip mounted in the lower substrate.

Abstract: A non-planar substrate strip for semiconductor packages is revealed, primarily comprising a substrate core having an external surface, an external solder mask and a patterned thick solder mask. The external solder mask covers the external surfaces of a plurality of substrate units of the non-planar substrate strip. The patterned thick solder mask is formed on the opposing surface of the substrate core only to cover a frame of the substrate core to expose the die-attaching surface of the substrate units. The patterned thick solder mask is thicker than the external solder mask. Therefore, the substrate strengths and die-attaching strengths of the substrate strip are enhanced. The substrate warpage is restrained during manufacturing the substrate strip. A semiconductor packaging method utilizing the substrate strip is also revealed.

Abstract: A method of manufacturing a board on chip package including laminating a dry film on a carrier film, one side of which is laminated by a thin metal film; patterning the dry film in accordance with a circuit wire through light exposure and developing process, and forming a solder ball pad and a circuit wire; removing the dry film; laminating an upper photo solder resist excluding a portion where the solder ball pad is formed; etching the thin metal film formed on a portion where the upper photo solder resist is not laminated; mounting a semiconductor chip on the solder ball pad by a flip chip bonding; molding the semiconductor chip with a passivation material; removing the carrier film and the thin metal film; and laminating a lower photo solder resist under the solder ball pad. The board on chip package provides a high density circuit since a circuit pattern is formed using a seed layer.

Abstract: A circuit board structure embedded with semiconductor chips is proposed. A semiconductor chip is received in a cavity of a supporting board. A dielectric layer and a circuit layer are formed on the supporting board and the semiconductor chip. A plurality of hollow conductive vias are formed in the dielectric layer for electrically connecting the circuit layer to the semiconductor chip. By providing the hollow conductive vias of present invention, the separating results of different coefficients of expansion and thermal stress are prevented, and thus electrical function of products is ensured.

Abstract: To provide a stacked mounting structure in which the number of semiconductor chips that can be stacked is greater than conventionally, as well as a method for fabricating the same, each semiconductor chip has electrodes provided at least at one end in the stacked mounting structure, and a board holding the semiconductor chips at the one end is folded with at least two of the semiconductor chips being stacked so as to at least partially overlap with each other.

Abstract: Provided is a semiconductor package accomplishing a fan-out structure through wire bonding in which a pad of a semiconductor chip is connected to a printed circuit board through wire bonding. A semiconductor package can be produced without a molding process and can be easily stacked on another semiconductor package while the appearance cracks and the warpage defects can be prevented.

Abstract: In a ball grid array (BGA) package, a first stiffener is attached to a surface of a substrate. A second stiffener is attached to the surface of the substrate to be co-planar with the first stiffener. The second stiffener is separated from the first stiffener by a channel therebetween. An integrated circuit (IC) die is mounted to a surface of the second stiffener.

Abstract: A semiconductor device includes a semiconductor substrate having a main surface, the main surface including a first and second areas formed with a high-frequency circuit element, and a third area located around the first and second areas and formed with a low-frequency circuit element. The semiconductor device also includes a sealing resin which covers the main surface; a plurality of first external terminals which are formed above the third area and which are electrically connected to the high-frequency circuit element, the first external terminals protruding from the surface of the sealing resin. The semiconductor device further includes a plurality of second external terminals which are formed above the third area and which are electrically connected to the low-frequency circuit element, the second external terminals protruding from the surface of the sealing resin.

Abstract: A window-type semiconductor package to balance top and bottom moldflows and its method are revealed. The package primarily comprises a substrate having a slot, a chip, and an encapsulant. After die attaching, an input opening and an output opening are formed and exposed from both ends of the slot. The slot is off-center designed so that the dimension of the input opening is smaller than the one of the output opening. The encapsulant has a top molding portion formed on the top surface of the substrate and a smaller bottom molding portion formed on the bottom surface of the substrate. The mold-flowing speeds between the top molding portion and the bottom molding portion are balanced to eliminate trapped air bubbles in the top mold and to avoid the flooding of the molding compound in the bottom mold.

Abstract: Disclosed is a semiconductor IC device capable of suppressing the interference of noise generated in one functional block with other functional blocks therein while protecting against electrostatic breakdown. A plurality of isolated pads are connected to a first terminal through respective wires, and further connected to a plurality of isolated pads each connected to a second terminal having the same function as that of the first terminal, so as to reduce noise interference based on the pad isolation and protect against electrostatic breakdown based on the inter-pad connection.

Abstract: A method and apparatus for packaging a semiconductor die with an interposer substrate. A semiconductor device assembly includes a conductively bumped semiconductor die and an interposer substrate having multiple recesses formed therein. The semiconductor die is mounted to the interposer substrate with the conductive bumps disposed in the multiple recesses so that an active surface of the semiconductor die is directly mounted to a facing surface of the interposer substrate. One or more openings may be provided in an opposing surface of the interposer substrate which extends to the multiple recesses and the conductive bumps disposed therein and dielectric filler material may be introduced through the one or more openings into the recesses.

Abstract: A stackable package substrate has an opening shaped and dimensioned to accommodate a mold cap of a package upon which the stackable package is to be mounted. On the die attach surface, the frame substrate accommodates a die attach margin adjacent at the edge of the opening; and a row of wire bond sites arranged along at an outer frame edge, for electrical interconnection. The frame substrate accommodates z-interconnect ball pads arranged to align with corresponding z-interconnect pads on the substrate of a package. A stackable package has a frame substrate. A stacked package assembly includes a second package mounted on a first package using peripheral solder ball z-interconnect, in which the first package includes a die enclosed by a mold cap and in which the second package includes one die mounted on the frame substrate.

Abstract: A semiconductor device includes a substrate, a semiconductor chip, a conductive member and an external electrode. A penetrating hole is formed in the substrate, the penetrating hole having an internal wall surface, the internal wall surface having a protrusion formed of a material constituting the substrate. The semiconductor chip has an electrode. The conductive member is formed over a particular region including the penetrating hole on one side of the substrate, and is electrically connected to the electrode of the semiconductor chip. The external electrode is provided through the penetrating hole, electrically connected to the conductive member, and projects from the other side of the substrate.

Abstract: A stacked multi-chip package with an EMI shielded component has first and second substrates mounted together by a grid array of metallic connecting nodes, such as a solder Ball Grid Array. Each substrate has a conductive plane associated with it. An electronic component is mounted between the first and second substrates and is surrounded by a group of the metallic connecting nodes that are also electrically connected to the conductive planes of both substrates to form a conductive Faraday cage about the component.

Abstract: The present invention relates to a method of aligning stacked chips wherein the apparatus and method utilize bumps in the form of exposed metal lines on a first chip. The present invention further relates to taking a resistance measurement to determine a quality of alignment wherein the resistance measurement indicates a direction in which the first chip and the second chip are misaligned.

Abstract: A bonding-patterned device comprises: a bonding layer provided on a bonding surface to be bonded to a mounting member. The bonding-patterned device has a planar shape which is generally a parallelogram. The bonding-patterned device is separated and cut out from a plate material along a plurality of evenly spaced straight lines, the surface of the plate material provided with the bonding layer being partitioned into a plurality of compartments by a plurality of evenly spaced straight lines parallel to each of the two pairs of opposite sides of the generally parallelogram shape. The plurality of compartments are classified into first compartments and second compartments alternately arranged in a checkerboard configuration, where the bonding layer is provided inside the first compartments, and the bonding layer is not provided in the second compartments and on the contours thereof.

Abstract: A stacked package structure utilizes flip-chip technology to stack an acoustic micro-sensor on an integrated circuit (IC) device having a recess as a back chamber and cover the acoustic micro-sensor using a glass substrate or a planar substrate with an aperture. With the use of the stacked package structure, the package volume of the acoustic micro-sensor can be reduced effectively.

Abstract: A rectify element as a semiconductor device has a disk section, a first solder part, a buffer plate, a second solder part, a semiconductor chip, and a lead, and a sealing member with which the semiconductor chip is sealed. A cylindrical concave part is formed at one end surface of the disk section. A side wall of the cylindrical concave part faced to an inner peripheral wall at the upper surface of the disk section has a sloped shape of an angle of more than 90° to a contact surface of the upper surface of the disk section on which the semiconductor chip is placed.

Abstract: A semiconductor device includes a rigid substrate, a flexible solid-state image sensor and bumps. The bumps are aligned along a pair of opposing edges of the rigid substrate, and the diameter of the bumps gradually increases from the center to the ends of the edges. Owing to the difference in diameter of the bumps, the solid-state image sensor is curved convexly to the rigid substrate.

Abstract: In accordance with an embodiment of the invention, an integrated circuit including a plurality of connection pads is provided, wherein a first connection pad is configured in accordance with a first contacting technology, and wherein a second connection pad is configured in accordance with a second contacting technology. The second contacting technology is different from the first contacting technology.

Abstract: A power semiconductor module having surface-mountable flat external contact areas and a method for producing the same is disclosed. In one embodiment, the top sides of the external contacts form an inner housing plane, on which at least one power semiconductor chip is fixed by its rear side on a drain external contact. An insulation layer covers the top side over the edge sides of the semiconductor chip as far as the inner housing plane whilst leaving free the source and gate contact areas on the top side of the semiconductor chip and also whilst partly leaving free the top sides of the corresponding external contacts. Arranged on the insulation layer is a connecting conductive layer between the source contact areas on the top side of the semiconductor chip and the top sides of the source external contacts, and also a gate connecting layer from the gate contact areas to the top side of the gate external contact.

Abstract: A light emitting device has a cup portion with a bottom surface opening, and one electrode of a light emitting element is connected to the cup portion. The other electrode of the light emitting element is connected to a lead set up from an inner space to outside the cup portion using the opening of the cup portion. Each electrode and lead of the light emitting device can be electrically connected without bonding wires. This prevents shadows or light unevenness from reflecting the shape of the bonding wire, thereby enhancing light-emission efficiency. As an alternative to setting up the lead from inside to the outside of the cup portion, the lead existing outside the cup portion and the other electrode are electrically connected via the bonding wire through the cup portion's opening. Thus, light outputted outside of the light emitting device is not intercepted by the bonding wire.

Abstract: The present invention discloses an anodically bonded vacuum cell structure with a glass substrate including a cavity, and a substrate deposited on the glass substrate, thereby enclosing the cavity to form a bonding interface. The bonding interface having silicon such that the substrate includes a layer of silicon or a secondary substrate with silicon layer bonded onto the secondary substrate.

Abstract: Disclosed are IC package structures having stair stepped layers and which have no plated vias. Such structures can be fabricated either as discrete packages or as strips such as might be beneficial in for use with memory devices wherein critical or high speed signals can be routed along the length of the multi-chip strip package without having to have the signals ascend and descend from the interconnection substrate on which the assembly is mounted to the IC package termination and back as the signal transmits between devices.

Abstract: A semiconductor component includes flip-chip contacts arranged on a wiring structure of a semiconductor chip. The wiring structure includes at least one metallization layer and at least one dielectric insulation layer made of a low-k material with a relative permittivity ?r lower than the relative permittivity of a silicon dioxide. The flip-chip contacts are arranged on contact areas of an upper metallization layer and have a polymer core surrounded by a lead-free solder sheath.

Abstract: The present invention provides a flexible substrate for a package of a die which has an active surface and a plurality of first bond pads arranged in a form of a row and formed on the active surface. The flexible substrate includes a flexible insulating film and a plurality of first leads formed on the flexible insulating film. Each of the first leads corresponds to one of the first bond pads and has a respective first body portion, a respective first bond portion and a respective first extension portion. For each of the first leads, the width of the first bond portion is larger than those of the first body portion and the first extension portion.

Abstract: A device is disclosed which includes a die comprising an integrated circuit and an interposer that is coupled to the die, the interposer having a smaller footprint than that of the die. A method is disclosed which includes operatively coupling an interposer to a die comprising an integrated circuit, the interposer having a smaller footprint than that of the die, and filling a space between the interposer and the die with an underfill material.

Abstract: An integrated circuit arrangement including a nonplanar substrate on which an integrated circuit is formed on at least one side, wherein the side of the substrate a which has the integrated circuit is arranged on a carrier and the carrier is produced from a chemically resistant material.

Abstract: According to the invention, a layer made of an electrically insulating material is applied to a substrate and a component that is arranged thereupon in such way that said layer follows the surface contour formed by the substrate and the component.

Abstract: A circuit board has a metal pattern that is formed on a surface of the circuit board to be connected with bumps in two-dimensional arrangement for mounting an electronic device that has the bumps. A plurality of the bumps which has even electrical potentials is electrically connected by the metal pattern on the surface of the circuit pattern.

Abstract: An anti-impact memory module mainly comprises a multi-layer PWB (Printed Wiring Board), a plurality of memory packages and a plurality of first anti-impact bars. The PWB has two longer sides and two shorter sides. A plurality of gold fingers are disposed along one of the longer sides. The first anti-impact bars are disposed on one surface of the PWB and adjacent to the two shorter sides, which are higher than the memory packages in height. Preferably, at least a second anti-impact bar is formed at another longer side far away from the gold fingers. The first anti-impact bars and/or the second anti-impact bar can be utilized to cushion impact force for preventing the memory module product from damaging while fallen accidentally.

Abstract: An IC package with a near-substrate-scale die-attaching layer includes a substrate, a near-substrate-scale die-attaching layer, a chip, a plurality of bonding wires, an encapsulant, and a plurality of solder balls. A plurality of ball pads are formed on the bottom surface of the substrate for solder ball placement. The near-substrate-scale die-attaching layer is formed on the top surface of the substrate covering most of the top surface above the ball pads without extending to the edges of the top surface. The active surface of the chip is attached to a first portion of the near-substrate-scale die-attaching layer and is electrically connected to the substrate by the bonding wires. The encapsulant is formed above the top surface of the substrate to cover a second portion of the near-substrate-scale die-attaching layer extending between the substrate and the encapsulant.

Abstract: A semiconductor device includes a support body, a first substrate provided on a surface at one side of the support body, a second substrate provided on a surface at the other side of the support body, and a semiconductor chip provided on the first substrate exposed to an opening part piercing the support body and the second substrate. The first substrate includes a first dielectric layer and a wiring layer, a plurality of first electrodes connected to the semiconductor chip which first electrodes are provided on a first surface of the first substrate exposed to an inside of the opening part, and the second substrate includes a second dielectric layer made of a material substantially the same as the first dielectric layer.

Abstract: Ball grid array packages that can be stacked to form highly dense components and the method for stacking ball grid arrays are disclosed. The ball grid array packages comprise flexible or rigid substrates. The ball grid array packages additionally comprise an arrangement for the substantial matching of impedance for the circuits connected to the semiconductor devices.

Abstract: In some embodiments, a ceramic interposer with silicon voltage regulator and array capacitor combination for integrated circuit packages is presented. In this regard, an apparatus is introduced having a bowl-shaped ceramic interposer containing conductive traces, one or more silicon voltage regulator(s) coupled with contacts on a first surface of the ceramic interposer, and one or more array capacitor(s) coupled with contacts on a second surface of the ceramic interposer. Other embodiments are also disclosed and claimed.

Abstract: Techniques for integrated circuit packaging in a flip chip configuration that ensures a migration path between related integrated circuits and utilizes core I/O (or area I/O) are provided. An integrated circuit, having a superset of functional circuit elements as compared to a reference integrated circuit, includes first and second sets of interconnection elements to connect to a package substrate. The first and second sets have matching arrangements, and corresponding interconnection elements of the first and second set have consistent functional assignments. The first and second sets include interconnection elements of mixed functional assignments. The first set is disposed within an area matching a size and shape of the reference integrated circuit, while the second set is disposed outside the area. In a specific embodiment, the first set includes an I/O signal and is located in the core area.

Abstract: An integrated circuit packaging device includes a laminate substrate. A first surface of the substrate can be mounted on an integrated circuit and the second surface can be mounted on a surface of a printed circuit board. The device can also include an array of lead contact pads on the first surface that can provide wire bond connections to circuit contact pads in the integrated circuit, and an array of solder ball contact pads on the second surface. Routing layers can provide electrical coupling between the lead contact pads on the first surface and the solder ball contact pads on the second surface. A dedicated contact pad on the first surface is electrically coupled to the laminate substrate.

Abstract: Corresponding parts to a first path portion in a first signal transmission path to a first semiconductor chip are an interconnection member and a second path portion a second signal transmission path to a second semiconductor chip and are not formed on the first tape. An electric length of the second signal transmission path is allowed to be adjusted independently of the first tape, so that the electric length of the second signal transmission path can be easily made equal to or substantially equal to that of the first signal transmission path.