Abstract: This disclosure relates to deep trench capacitors embedded in a package substrate on which an integrated circuit is mounted. In some aspects, a chip package includes an integrated circuit die that has a power distribution circuit for one or more circuits of the integrated circuit. The chip package also includes a substrate different from the integrated circuit and having a first surface on which the integrated circuit die is mounted and a second surface opposite the first surface. The substrate includes one or more cavities formed in at least one of the first surface or the second surface. The chip package also includes one or more deep trench capacitors disposed in at least one of the one or more cavities. Each deep trench capacitor is connected to the power distribution circuit by conductors.

Abstract: A device for determining temperature information from a sensor device, which is configured to transmit sensor information by time-limited electrical pulses according to a defined protocol, including: a data processing unit configured to perform the following: retrieving reference data relating to a relationship between a pulse duration of the electrical pulses and thermal effects in the sensor device; measuring the pulse duration at at least one of the electrical pulses; and determining the temperature information on the basis of at least one result of the measurement and the reference data. Also described are a related sensor system, a related vehicle, related methods, and a computer readable medium.

Abstract: An IC package includes a first die including a front side and a back side, the front side including a first signal routing structure, the back side including a first power distribution structure, and a second die including a front side and a back side, the front side including a second signal routing structure, the back side including a second power distribution structure. The IC package includes a third power distribution structure positioned between the first and second power distribution structures and electrically connected to each of the first and second power distribution structures.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate including a first conductive pathway electrically coupled to a power source; a mold material on the package substrate including a first microelectronic component embedded in the mold material, a second microelectronic component embedded in the mold material, and a TMV, between the first and second microelectronic components, the TMV electrically coupled to the first conductive pathway; a redistribution layer (RDL) on the mold material including a second conductive pathway electrically coupled to the TMV; and a third microelectronic component on the RDL and electrically coupled to the second conductive pathway, wherein the second conductive pathway electrically couples the TMV, the first microelectronic component, and the third microelectronic component.

Abstract: A semiconductor package for high-speed die connections using a conductive insert, the semiconductor package comprising: a die; a plurality of redistribution layers; a conductive insert housed in a perforation through the plurality of redistribution layers; and a conductive bump conductively coupled to an input/output (I/O) connection point of the die via the conductive insert.

Abstract: This disclosure relates to deep trench capacitors embedded in a package substrate on which an integrated circuit is mounted. In some aspects, a chip package includes an integrated circuit die that has a power distribution circuit for one or more circuits of the integrated circuit. The chip package also includes a substrate different from the integrated circuit and having a first surface on which the integrated circuit die is mounted and a second surface opposite the first surface. The substrate includes one or more cavities formed in at least one of the first surface or the second surface. The chip package also includes one or more deep trench capacitors disposed in at least one of the one or more cavities. Each deep trench capacitor is connected to the power distribution circuit by conductors.

Abstract: A z-disaggregated integrated circuit package substrate assembly comprises a first substrate component (a coreless patch), a second substrate component (a core patch), and a third substrate component (an interposer). The coreless patch comprises thinner dielectric layers and higher density routing and can comprise an embedded bridge to allow for communication between integrated circuit dies attached to the coreless patch. The core layer acts as a middle layer interconnect between the coreless patch and the interposer and comprises liquid metal interconnects to connect the core patch physically and electrically to the coreless patch and the interposer. Core patch through holes comprise liquid metal plugs. Some through holes can be surrounded by and coaxially aligned with magnetic plugs to provide improved power signal delivery. The interposer comprises thicker dielectric layers and lower density routing.

Abstract: In a wired substrate, heat dissipation performance is improved while an increase in an amount of metal is inhibited. The substrate includes a transmission line, an insulating material, and a heat storage material. In the substrate provided with the transmission line, the insulating material and the heat storage material, the transmission line transmits a predetermined electrical signal from a semiconductor chip. The transmission line for transmitting the predetermined electrical signal from the semiconductor chip is wired in the insulating material. The heat storage material has a higher thermal conductivity than the insulating material to which the transmission line is wired and accumulates latent heat accompanying phase transition that occurs within an operating temperature range of the semiconductor chip.

Abstract: A semiconductor device includes a substrate having a first active region disposed in a first region of a substrate and a second active region disposed in a second region of the substrate. A first gate stack is disposed over the first active region and a second gate stack is disposed over the second active region, the first and second gate stacks having elongated shapes oriented in a first direction. A first metal layer is disposed over the first gate stack and the second gate stack. The first metal layer includes first metal layer structures oriented in a second direction orthogonal to the first direction. A second metal layer disposed over the first metal layer. The second metal layer includes second metal layer structures oriented in the first direction. A third metal layer is disposed over the second metal layer. The third metal layer includes a third metal layer structures oriented in the second direction.

Abstract: A connector is provided with a housing including terminal accommodation chambers arranged in two rows, two shorting members to be mounted into a plurality of the terminal accommodation chambers arranged in one row and a plurality of the terminal accommodation chambers arranged in the other row and constituting a differential pair, a plurality of terminal fittings to be individually fixed to a main line constituting a differential pair and a branch line constituting a differential pair and connected to the shorting members by being inserted into the terminal accommodation chambers, and a plurality of locking lances formed in the housing and configured to retain the terminal fittings inserted into the terminal accommodation chambers. The locking lances are disposed only in regions different from a region between the plurality of terminal accommodation chambers arranged in the one row and the plurality of terminal accommodation chambers arranged in the other row.

Abstract: A modules is provided in which an electronic component is disposed on a first main surface and each of a plurality of first connection terminals is disposed on a second main surface. Moreover, a second connection terminal is disposed on the second main surface. When a substrate is viewed in a direction perpendicular to the second main surface, the second connection terminal is larger in area than each of the first connection terminals. When the substrate is viewed in the direction perpendicular to the second main surface, the second connection terminal is disposed on a straight line connecting the first connection terminals. The second connection terminal serves to establish an electrical connection.

Abstract: An electronic component embedded substrate includes: a core layer having a first through portion; an electronic component module including at least one electronic component and a metal layer surrounding at least a portion of the electronic component and disposed in the first through portion; and a first encapsulant disposed on the core layer, disposed in at least a portion of the first through portion, and covering at least a portion of the electronic component module.

Abstract: A method of determining a sequence for creating a plurality of wire loops is provided. The method includes (a) providing workpiece data for a workpiece. The workpiece data includes (i) position data for bonding locations of the workpiece, and (ii) wire loop data for a plurality of wire loops providing interconnection between ones of the bonding locations. The method also includes (b) analyzing the workpiece data. The step of analyzing includes considering overlap conditions between ones of the plurality of wire loops, considering wire loop heights of ones of the plurality of wire loops, considering lateral bend conditions between ones of the plurality of wire loops, and considering wire loop positions for ones of the plurality of wire loops. The method also includes (c) providing a sequence of creating the plurality of wire loops in connection with the workpiece at least partially based on the results of step (b).

Abstract: Asynchronous bridge rectifier comprises a monolithic die comprising plurality of planar switching elements, each having a control terminal and two controlled terminals. The bridge rectifier further comprises a plurality of controller integrated circuits mechanically attached to the monolithic die, wherein the controller integrated circuits are configured to sense voltage across the controlled terminals of the planar switching elements and to generate a drive signal at the control terminal of the planar switching elements to control opening and closing of the planar switching elements so as to be capable of rectifying an alternating current input signal to form a rectified direct current output signal.

Abstract: A semiconductor package comprises a first die thermally coupled to a first thermally conductive device. The first thermally conductive device has a first surface exposed to an exterior of the semiconductor package. The package comprises a second die thermally coupled to a second thermally conductive device, the second thermally conductive device having a second surface exposed to an exterior of the semiconductor package. The first and second dies are positioned in different horizontal planes.

Abstract: Various multi-die arrangements and methods of manufacturing the same are disclosed. In some embodiments, a method of manufacture includes a face-to-face process in which a first GPU chiplet and a second GPU chiplet are bonded to a temporary carrier wafer. A face surface of an active bridge chiplet is bonded to a face surface of the first and second GPU chiplets before mounting the GPU chiplets to a carrier substrate. In other embodiments, a method of manufacture includes a face-to-back process in which a face surface of an active bridge chiplet is bonded to a back surface of the first and second GPU chiplets.

Abstract: A device may include a printed circuit board (PCB), a plurality of surface-mount devices disposed on the PCB, wherein a thermal mass of each of the surface-mount devices ranges between a first thermal mass value and a second thermal mass value that is greater than the first thermal mass value, and a plurality of thermal capacitors disposed on the PCB, wherein a thermal mass of each of the thermal capacitors is equal to or greater than the first thermal mass value of the surface-mount devices.

Abstract: A method of forming an interposer includes providing a first interposer substrate including a first bulk material having a plurality of first through silicon vias (TSVs) extending through the first bulk material. Also provided is a second interposer substrate including a second bulk material having a plurality of second TSVs extending through the second bulk material, and a wiring plane formed on the second bulk material such that the wiring plane is electrically connected to at least one of the second TSVs. The method includes connecting a passive electrical device to at least one of the first and second interposer substrates. The first interposer substrate is joined to the second interposer substrate such that the passive electrical device is provided between the first and second interposer substrates and the wiring plane is provided as an interface wiring plane between the first and second bulk materials.

Abstract: A circuit board structure includes a substrate, a first build-up structure layer, first and second external circuit layers, at least one first conductive via, and second conductive vias. The first build-up structure layer is disposed on a first circuit layer of the substrate. The first external circuit layer is disposed on the first build-up structure layer. The second external circuit layer is disposed on a second circuit layer and a portion of a third dielectric layer of the substrate. The first conductive via is electrically connected to the first external circuit layer and the second external circuit layer to define a signal path. The second conductive vias surround the first conductive via, and the first external circuit layer, the second conductive vias, the first circuit layer, the outer conductive layer, and the second external circuit layer define a first ground path. The first ground path surrounds the signal path.

Abstract: A semiconductor device includes a first conductive plate, a second conductive plate, first switching elements, second switching elements, a first supply terminal and a second supply terminal. The first and second conductive plates are spaced apart from each other in a first direction. The first switching elements are bonded to the first conductive plate, and are electrically connected to the second conductive plate. The second switching elements are bonded to the second conductive plate. The first supply terminal is bonded to the first conductive plate. The second supply terminal has a region that overlaps with the first supply terminal as viewed in a plan view. The second supply terminal is spaced apart from the first conductive plate and the first supply terminal in a thickness direction perpendicular to the first direction. The second supply terminal is electrically connected to the second switching elements.

Abstract: A printed circuit board (PCB), comprising a first layer, the first layer comprising a first dielectric material substantially exclusively. The PCB also comprises a second layer, the second layer comprising the first dielectric material within a first region and a second dielectric material within a second region adjacent to first region. The first dielectric material has a first dielectric constant, a first coefficient of thermal expansion (CTE) and a first glass transition temperature (Tg). The second dielectric material has a second dielectric constant, a second CTE and a second Tg. The first dielectric constant is greater than the second dielectric constant. The first CTE is substantially equal to the second CTE; and the first Tg and the second Tg are greater than 150° C.

Abstract: A through electrode substrate includes a substrate provided with a through hole, a through electrode positioned in the through hole, and a first wiring structure including at least a first wiring layer positioned on a first surface of the substrate, and a second wiring layer positioned on the first wiring layer. The first wiring layer and the second wiring layer respectively have an insulation layer and an electroconductive layer. A first insulation layer of the first wiring layer includes at least an organic layer. At least one wiring layer of the first wiring structure includes an inorganic layer having insulation properties, the inorganic layer being positioned to a first side of the organic layer of the first insulation layer of the first wiring layer.

Abstract: In one example, a semiconductor device comprises a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate and covering a lateral side of the electronic component. The dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall. Other examples and related methods are also disclosed herein.

Abstract: A safety system for a needle probe card for test machines for high-voltage and high-current testing of power semiconductor electronic devices is provided. The needle probe card has a plurality of needles adapted to be placed in contact with a device under test (DUT), each needle being configured to allow a flow of electric current. The safety system has a control unit capable of determining the electric current flowing in every single needle, and a plurality of switching devices configured to selectively interrupt the electric current flowing in the needles. At least one switching device is associated with each needle of the needle probe card. The control unit is configured to drive every single switching device to selectively interrupt the flow of electric current in a corresponding needle.

Abstract: A die package structure and a method for fabricating the same are provided. The method includes: fixing a first die on a package base; aligning first hollow pads of a flexible printed circuit board with first pads of the first die, and fixing the flexible printed circuit board; soldering the first hollow pads to the first pads; fixing a second die on the flexible printed circuit board to overlap with the first die; folding the flexible printed circuit board, such that second hollow pads of the flexible printed circuit board are aligned with second pads of the second die, and signal test pads of the flexible printed circuit board are exposed; fixing the flexible printed circuit board on the second die; soldering the second hollow pads to the second pads; soldering metal wires to the signal test soldering pads; and soldering package pins to the metal wires.

Abstract: A semiconductor device assembly is provided. The assembly includes a first package element and a second package element disposed over the first package element. The assembly further includes a plurality of die support structures between the first and second package elements, wherein each of the plurality of die support structures has a first height, a lower portion surface-mounted to the first package element and an upper portion in contact with the second package element. The assembly further includes a plurality of interconnects between the first and second package elements, wherein each of the plurality of interconnects includes a conductive pillar having a second height, a conductive pad, and a bond material with a solder joint thickness between the conductive pillar and the conductive pad. The first height is about equal to a sum of the solder joint thickness and the second height.

Abstract: An electronic apparatus includes: a hard substrate having a first surface with a first wiring layer terminal, a second surface positioned on a back side of the first surface, and an end surface having a second wiring layer terminal and being continuous with the first surface and the second surface; and a flexible substrate having a third surface with a third wiring layer terminal and opposing the first surface of the hard substrate, and a fourth surface having a fourth wiring layer terminal and positioned on a back side of the third surface. The first wiring layer terminal and the fourth wiring layer terminal are electrically connected by solder. The second wiring layer terminal and the third wiring layer terminal are electrically connected by solder.

Abstract: A package structure is provided. The package structure includes a first redistribution structure and an interposer over the first redistribution structure. The interposer includes a through via electrically connected to the first redistribution structure and a conductive pillar over the through via. The package structure also includes a first molding compound layer surrounding the interposer. The package structure further includes a second redistribution structure over the first molding compound layer and electrically connected to the conductive pillar. The package structure also includes a semiconductor die over and electrically connected to the second redistribution structure.

Abstract: An electronic package comprises an integrated circuit (IC) configured to receive a power input signal and to deliver a regulated power output signal. A multilayer electrical routing structure is attached to the IC and is configured to couple the electronic package to an external circuit. The multilayer routing structure has one or more electrical conductors on each of at least two layers which are configured to route the power input signal from the external circuit to the IC and to route the regulated power output signal from the IC to the external circuit. The one or more electrical conductors form an integrated inductive device having a respective portion disposed on each of the at least two layers and the power output signal is coupled to the external circuit through the integrated inductive device.

Abstract: A stacked semiconductor device having hybrid metallic structures and associated systems and methods are disclosed herein. The stacked semiconductor device can include a first semiconductor die and a second semiconductor die. The first semiconductor die can include a top surface, a first bond site at the top surface and a second bond site at the first surface spaced apart from the first bond site. The second semiconductor die can include a lower surface facing the top surface of the first semiconductor die, a third bond site at the lower surface, and a fourth bond site at the lower surface. The third bond site includes a conductive structure bonded to the first bond site by a metal-metal bond. The fourth bond site at the lower surface includes a solder ball bonded to the second bond site.

Abstract: A semiconductor package includes a lower package, an interposer on the lower package, and an under-fill layer between the interposer and the lower package. The interposer includes a through hole that vertically penetrates the interposer. The under-fill layer includes an extension that fills at least a portion of the through hole.

Abstract: A power device assembly includes a heat-generating device, one or more porous bonding layers, and one or more cap layers. The one or more porous bonding layers are formed on a surface of the heat-generating device and define a plurality of embedded vapor channels. The one or more cap layers are engaged with a porous bonding layer of the one or more porous bonding layers opposite the heat-generating device. The one or more cap layer comprise a plurality of liquid feed channels for feeding cooling fluid to the heat-generating device via the porous bonding layer.

Abstract: A semiconductor package structure includes first via structures formed through a core substrate. The structure also includes an interposer embedded in the core substrate between the first via structures. The interposer includes second via structures formed through an interposer substrate. The structure also includes a first redistribution layer structure formed over the core substrate. The structure also includes a second redistribution layer structure formed under the core substrate. The structure also includes a first encapsulating layer formed between a sidewall of the interposer and a sidewall of the core substrate.

Abstract: A wiring board according to the present disclosure includes a core insulating layer, a first laminated body located on an upper surface of the core insulating layer, and a second laminated body located on a lower surface of the core insulating layer. Each of the first laminated body and the second laminated body has a structure in which at least four electrical conductor layers and at least three build-up insulating layers are alternately located. The electrical conductor layers include two types, that are a first electrical conductor layer and a second electrical conductor layer. In the electrical conductor layers in the first laminated body, at least a first outermost layer and a first innermost layer are the first electrical conductor layers, and a first intermediate layer located farther from the core insulating layer than the first innermost layer includes at least two or more of the second electrical conductor layers.

Abstract: A transistor package having four terminals includes a semiconductor transistor chip and a semiconductor diode chip. The semiconductor transistor chip includes a control electrode and a first load electrode on a first surface and a second load electrode on a second surface opposite the first surface. The semiconductor diode chip includes a first diode electrode on a first surface and a second diode electrode on a second surface opposite the first surface. The transistor package includes a first terminal electrically connected to the control electrode, a second terminal electrically connected to the first diode electrode, a third terminal electrically connected to the first load electrode and a fourth terminal electrically connected to the second load electrode. At least the first terminal, the second terminal and the third terminal protrude from one side of transistor package. The first terminal is arranged between the second terminal and the third terminal.

Abstract: A method for producing 3D semiconductor devices including: providing a first level including first transistors and a first single crystal layer; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming at least one (ALO) second level on top of or above the second metal layer; performing a lithography step on the second level; forming ALO third level on top of or above the ALO second level; performing processing steps to form first memory cells within the ALO second level and second memory cells within the ALO third level, first memory cells include ALO second transistor, second memory cells include ALO third transistor, first metal layer thickness is at least 50% greater than the second metal layer thickness, ALO first transistor controls power delivery to ALO second transistor; then dicing using a laser system.

Abstract: Memory devices are disclosed. A memory device may include a first row of power supply pads and a first row of input/output (DQ) pads. The memory device may further include a row of vias, wherein the first row of DQ pads is positioned at least partially between the row of vias and the first row of power supply pads. The memory device may also include a number of conductors, wherein each via of the row of vias is coupled, via an associated conductor of the number of conductors, to either a power supply pad of the first row of power supply pads or a DQ pad of the first row of DQ pads. Methods of forming an interface region of a memory device, and electronic systems are also disclosed.

Abstract: A semiconductor package includes a package substrate, an interposer, a semiconductor chip between the package substrate and the interposer, a plurality of conductive connectors between the package substrate and the interposer, and a capacitor stack structure between the package substrate and the interposer, he capacitor stack structure including a first capacitor connected to the package substrate, and a second capacitor connected to the interposer.

Abstract: According to one embodiment, a sensor includes a first sensor part. The first sensor part includes a first electrode, a first counter electrode, and a first intermediate layer located between the first electrode and the first counter electrode. The first counter electrode includes a first electrode side surface. The first electrode side surface crosses a first cross direction. The first cross direction crosses a first direction from the first electrode toward the first counter electrode. The first intermediate layer includes a first intermediate layer side surface. The first intermediate layer side surface crosses the first cross direction. The first intermediate layer side surface is recessed when referenced to the first electrode side surface.

Abstract: A semiconductor chip module includes a PCB including first and second faces; a buffer on the first face; a first chip on the first face, and including a first connection terminal and a second connection terminal, a first signal being provided to the first connection terminal, and a second signal being provided to the second connection terminal; a second chip on the second face, and including a third connection terminal to which the first signal is provided, and a fourth connection terminal to which the second signal is provided. The first connection terminal and the third connection terminal receive the first signal from the buffer at the same time. The first connection terminal is closer to the buffer as compared with the second connection terminal. The third connection terminal is closer to the buffer as compared with the fourth connection terminal.

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.

Abstract: An LED device includes a substrate, a conductive layer, an LED chip, and a discharge element. The substrate has upper and lower surfaces and four edges interconnected to one another and surrounding the upper surface. The conductive layer is formed on the upper surface, and has first and second regions electrically separated by a trench. The trench has a first segment inclined relative to each edge of the substrate by a predetermined angle ranging between 0 and 90 degrees, and a second segment connected to the first segment. The LED chip is disposed across the first segment, and the discharge element is disposed across the second segment, both interconnecting the first and second regions.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a via passivation layer disposed on an inactive surface of a substrate, a through-electrode vertically penetrating the substrate and the via passivation layer, a concave portion formed in the top surface of the via passivation layer and disposed adjacent to the through-electrode, and a via protective layer coplanar with the via passivation layer and the through-electrode and to fill the concave portion. In a horizontal cross-sectional view, the via protective layer has a band shape surrounding the through-electrode.

Abstract: A packaging substrate can include a first surface and a second opposing surface, the first surface including a first mounting region of a first electronic module region and the second opposing surface including a first electrical contacts region of the first electronic module region. The packaging substrate can include a saw street region with at least a portion that surrounds the first electronic module region, and a saw street feature formed on the second opposing surface within at least a portion of the saw street region, the saw street feature being a solder mask layer over a metal layer.

Abstract: An electronic package is provided. The electronic package includes a power regulating component, an electronic component, and a circuit structure. The circuit structure separates the power regulating component and the electronic component. The circuit structure is configured to provide a first power to the power regulating component. The power regulating component is configured to provide a second power to the electronic component through the circuit structure.

Abstract: The present disclosure relates to an interposer. The interposer includes: a support body formed of a ceramic material, a connection electrode configured to the top surface and bottom surface of the support body, and a shielding member disposed at an outer surface of the support body. At least a part of the support body is disposed along the edge of a substrate, and electrically connects the substrate and a substrate. The interposer is formed of a ceramic material and thus make it possible to implement a fine pattern, to improve dimensional stability by preventing the bending deformation of ceramic green sheets, and to raise the reliability of signal transmission. Therefore, the interposer can contribute to implementing high performance of an electronic device and reducing the size of the electronic device.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a package substrate, a semiconductor chip disposed over the package substrate, and an integrated device located below and bonded to the lower surface of the semiconductor chip. The semiconductor chip has a lower surface facing the package substrate and is electrically connected to the package substrate through conductive structures. The integrated device is laterally surrounded by the conductive structures, and the integrated device and the conductive structures are located within boundaries of the semiconductor chip when viewed in a direction perpendicular to the lower surface of the semiconductor chip.

Abstract: Described is an apparatus comprising a semiconductor interconnect substrate and an interface. The semiconductor interconnect substrate may be electrically coupled to one or more components mounted thereon. The interface may be operable to carry a configuration command set to the one or more components in a normal operation mode subsequent to a power-up mode.

Abstract: A package structure includes a first redistribution circuit structure, a second redistribution circuit structure, a semiconductor die, a waveguide structure, and an antenna. The semiconductor die is sandwiched between and electrically coupled to the first redistribution circuit structure and the second redistribution circuit structure. The waveguide structure is located aside and electrically coupled to the semiconductor die, wherein the waveguide structure includes a part of the first redistribution circuit structure, a part of the second redistribution circuit structure and a plurality of first through vias each connecting to the part of the first redistribution circuit structure and the part of the second redistribution circuit structure. The antenna is located on the semiconductor die, wherein the second redistribution circuit structure is sandwiched between the antenna and the semiconductor die, and the antenna is electrically communicated with the semiconductor die through the waveguide structure.

Abstract: Apparatuses, such as semiconductor device packages, may include, for example, a device substrate including a semiconductor material and bond pads coupled with an active surface of the device substrate. A package substrate may be secured to the device substrate, the package substrate configured to route signals to and from the bond pads. A ball grid array may be supported on, and electrically connected to, the package substrate. Each ball of the ball grid array positioned and configured to carry a clock signal or a strobe signal may be located in a central column of the ball grid array.