Abstract: A liquid cooling server includes a chassis including a unit case housing portion; a unit case which moves in a first direction for being inserted in and pulled out from the unit case housing portion and includes a heat generating component and a portion to be cooled; a cooling plate which is disposed to the chassis, opposes the unit case housing portion in a second direction perpendicular to the first direction, and includes a flow path through which a cooling medium flows; a metal portion which is provided to either one of the cooling plate and the portion to be cooled, includes a plurality of first protrusions which protrude in the second direction towards the unit case housing portion and are arranged in the first direction; and a heat transfer body provided between the metal portion and the first member in the second direction, the heat transfer body being elasticity.

Abstract: An integrated circuit package system is provided forming a substrate having an integrated circuit die thereon, thermally connecting a heat slug and a resilient thermal structure to the integrated circuit die, and encapsulating the resilient thermal structure.

Abstract: A carrier assembly for an integrated circuit is disclosed. The carrier assembly has a retainer with electrical contacts for receiving the integrated circuit, and island defining portions arranged about the retainer. Each island defining portion is connected to neighboring island defining portions through a serpentine member. This connection allows resilient deflection between the island defining portions.

Abstract: A semiconductor device package includes a substrate with one or more pads and at least one semiconductor device that has one or more of its electrodes electrically connected to the substrate pads. The package also includes one or more terminals in electrical connection with the substrate pads and that provide for external connection to the device.

Abstract: Metal MEMS structures are fabricated from metal substrates, preferably titanium, utilizing micromachining processes with a new deep etching procedure to provide released microelectromechanical devices. The deep etch procedure includes metal anisotropic reactive ion etching utilizing repetitive alternating steps of etching and side wall protection. Variations in the timing of the etching and protecting steps produces walls of different roughness and taper. The metal wafers can be macomachined before forming the MEMS structures, and the resulting wafers can be stacked and bonded in packages.

Abstract: Apparatus and method include using a bare die microelectronic device; a heat sink assembly; a heat sink mounting assembly for mounting the heat sink assembly independently of the bare die microelectronic device; and, a force applying mechanism that compression loads, under controlled forces, a surface of the bare die into a direct heat transfer relationship at a thermal interface with a heat sink assembly.