Abstract: Provided are a resin composition superior in moldability, and capable of yielding a cured product exhibiting a low elastic modulus even at a high temperature and no decrease in glass-transition temperature and having a favorable reflow resistance and heat resistance; and a semiconductor device encapsulated by such cured product. The resin composition is a heat-curable resin composition for semiconductor encapsulation, and contains: (A) an epoxy resin being solid at 25° C.; (B) an organopolysiloxane having, in one molecule, at least one cyclic imide group and at least one siloxane bond; (C) an inorganic filler; and (D) an anionic curing accelerator.

Abstract: Provided are a resin composition superior in moldability, and capable of yielding a cured product exhibiting a low elastic modulus even at a high temperature and no decrease in glass-transition temperature and having a favorable reflow resistance and heat resistance; and a semiconductor device encapsulated by such cured product. The resin composition is a heat-curable resin composition for semiconductor encapsulation, and contains: (A) an epoxy resin being solid at 25° C.; (B) an organopolysiloxane having, in one molecule, at least one cyclic imide group and at least one siloxane bond; (C) an inorganic filler; and (D) an anionic curing accelerator.

Abstract: In one aspect of the present disclosure, there is provided a sealant precursor, comprising a first part (A) comprising (a1) an epoxy curing agent having an amine equivalent weight of at least 150 grams per mole of amine equivalents; (b1) a first epoxy curative; a second part (B) comprising (a2) a blend of epoxy resins comprising at least one bisphenol A epoxy resins and at least one bisphenol F epoxy resin; (b2) at least one silicone-based resin comprising epoxy functionalities; (c2) optionally, a toughener.

Abstract: A flexible and stretchable integrated electronic device comprising a substrate having a stiffness gradient, wherein a rigid electronic device is embedded within the substrate. The stiffness gradient within the substrate prevents delamination at the interface between the substrate and the embedded device. A method of fabricating an integrated electronic device having a stiffness gradient comprises applying a curing agent to an uncured polymer base material.

Abstract: The present invention relates to a polyarylene sulfide resin composition with a low outgas content, the composition containing: a polyarylene sulfide and a silane-modified epoxy resin. The polyarylene sulfide resin composition of the present invention shows excellent tensile strength and metal bonding strength as well as a low outgas content, and thus can be favorably used as a resin composition for manufacturing a product requiring molding accuracy.

Abstract: The invention relates to a method for producing a pigment paste and an electrocoat containing the paste, the past being made by mixing solid pigment particles with a grind resin in the presence of water and/or an organic liquid, wherein the grind resin includes a dispersion of core-shell particles in an epoxide prepolymer which is liquid at 20° C. and the core-shell particles have a silicone core and a polymer shell.

Abstract: Microelectronic systems encapsulated in a stretchable/flexible material, which is skin/bio-compatible and able to withstand environmental conditions. In one embodiment of the present description, the microelectronic system includes a microelectronic device that is substantially encapsulated in a non-permeable encapsulant, such as, butyl rubbers, ethylene propylene rubbers, fluoropolymer elastomers, or combinations thereof. In another embodiment, the microelectronic system includes a microelectronic device that is substantially encapsulated in a permeable encapsulant, such as polydimethylsiloxane, wherein a non-permeable encapsulant substantially encapsulates the permeable encapsulant.

Abstract: A method for fabricating an electronic device package includes providing a carrier, disposing a semiconductor chip onto the carrier, the semiconductor chip having a contact pad on a main face thereof remote from the carrier, applying a contact element onto the contact pad, applying a dielectric layer on the carrier, the semiconductor chip, and the contact element, and applying an encapsulant onto the dielectric layer.

Abstract: An electronic package is provided, which includes: a carrier; a plurality of electronic elements disposed on the carrier; a barrier frame disposed on the carrier and positioned between adjacent two of the electronic elements; an encapsulant formed on the carrier and encapsulating the electronic elements and the barrier frame with a portion of the barrier frame protruding from the encapsulant; and a shielding element disposed on the encapsulant and being in contact with the portion of the barrier frame protruding from the encapsulant. Therefore, the electronic package has an electromagnetic interference (EMI) shielding effect improved. The present disclosure further provides a method for fabricating the electronic package.

Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.

Abstract: A method for at least partially sealing a porous material is provided, comprising forming a sealing layer onto the porous material by applying a sealing compound comprising oligomers wherein the oligomers are formed by ageing a precursor solution comprising cyclic carbon bridged organosilica and/or bridged organosilanes. The method is especially designed for low k dielectric porous materials to be incorporated into semiconductor devices.

Abstract: An embodiment is directed to a polysiloxane having a moiety represented by the following Chemical Formula 1: *—Si-AR—Si—*??[Chemical Formula 1] wherein, in the Chemical Formula 1, AR is or includes a substituted or unsubstituted C6 to C30 arylene group.

Abstract: A process for fabricating an electronic component includes a liquid injection molding method for overmolding a semiconductor device. The liquid injection molding method includes: i) placing the semiconductor device in an open mold, ii) closing the mold to form a mold cavity, iii) heating the mold cavity, iv) injection molding a curable liquid into the mold cavity to overmold the semiconductor device, v) opening the mold and removing the product of step iv), and optionally vi) post-curing the product of step v). The semiconductor device may have an integrated circuit attached to a substrate through a die attach adhesive.

Abstract: A power semiconductor module comprises: a heat dissipation plate; an insulating wiring board having an upper electrode and a lower electrode, the lower electrode joined to the heat dissipation plate via a first solder; a semiconductor chip joined to the upper electrode via a second solder; a first low-k dielectric film coating sides of the lower electrode and the first solder; a second low-k dielectric film coating sides of the semiconductor chip and the second solder; a case on the heat dissipation plate and surrounding the insulating wiring board and the semiconductor chip; and an insulator filled in the case and coating the insulating wiring board, the semiconductor chip, and the first and second low-k dielectric films.

Abstract: A reconstituted wafer includes a rigid mass with a flat surface and a base surface disposed parallel planar to the flat surface. A plurality of dice are embedded in the rigid mass. The plurality of dice include terminals that are exposed through coplanar with the flat surface. A process of forming the reconstituted wafer includes removing some of the rigid mass to expose the terminals, while retaining the plurality of dice in the rigid mass. A process of forming an apparatus includes separating one apparatus from the reconstituted wafer.

Abstract: A substrate including a plurality of integrated circuitry die is fabricated or otherwise provided. The individual die have bond pads. A passivation layer comprising a silicone material is formed over the bond pads. Openings are formed through the silicone material to the bond pads. After the openings are formed, the die are singulated from the substrate. In one implementation, a method of fabricating integrated circuitry includes providing a substrate comprising a plurality of integrated circuitry die. Individual of the die have bond pads. A first blanket passivation layer is formed over the substrate in contact with the bond pads. A different second blanket passivation layer comprising silicone material is formed over the first passivation layer. Openings are formed through the first and second passivation layers to the bond pads. After the openings are formed, the die are singulated from the substrate. Other aspects and implementations are contemplated.

Abstract: Semiconductor light emitting devices include an aluminum nitride substrate, a light emitting diode on a face of the substrate and flexible silicone film that includes a silicone lens on the face of the substrate. The light emitting diode emits light through the silicone lens.

Abstract: A silicone resin composition contains a cage octasilsesquioxane having a group represented by the following formula (1), an alkenyl group-containing polysiloxane containing an alkenyl group having a number of moles larger than that of a hydrosilyl group in the cage octasilsesquioxane, a hydrosilylation catalyst, and an organohydrogenpolysiloxane. (where, in formula, R1 represents a monovalent hydrocarbon group selected from a saturated hydrocarbon group and an aromatic hydrocarbon group. R2 represents hydrogen or a monovalent hydrocarbon group selected from a saturated hydrocarbon group and an aromatic hydrocarbon group. The molar ratio of the monovalent hydrocarbon group:hydrogen in R2 in the cage octasilsesquioxane as a whole is, as an average value, in the range of 6.5:1.5 to 5.5:2.5.

Abstract: A curable organopolysiloxane composition and an optical semiconductor element sealant, each comprising (A) a diorganopolysiloxane that has at least 2 alkenyl groups wherein at least 70 mole % of all the siloxane units are methylphenylsiloxane units and the total content of 1,3,5-trimethyl-1,3,5-triphenylcyclotrisiloxane and 1,3,5,7-tetramethyl-1,3,5,7-tetraphenylcyclotetrasiloxane is no more than 5 weight %, (B) an organopolysiloxane that has at least 2 silicon-bonded hydrogen atoms wherein at least 15 mole % of the silicon-bonded organic groups are phenyl groups, and (C) a hydrosilylation reaction catalyst. An optical semiconductor device in which an optical semiconductor element within a housing is sealed with the cured product from the aforementioned composition.

Abstract: The present invention relates to a curable composition. A curable composition may be provided; which shows excellent processability and workability; which shows excellent light extraction efficiency, crack resistance, hardness, thermal shock resistance and adhesive strength after curing; and which has excellent reliability and long-term reliability under high-temperature and/or high-moisture conditions. Also, turbidity and surface stickiness may be prevented in the cured product.

Abstract: A silicone resin composition contains a first organopolysiloxane having, in one molecule, both at least two ethylenically unsaturated hydrocarbon groups and at least two hydrosilyl groups; a second organopolysiloxane having, in one molecule, at least two hydrosilyl groups without containing an ethylenically unsaturated hydrocarbon group; a hydrosilylation catalyst; and a hydrosilylation inhibitor.

Abstract: A light-emitting semiconductor device includes a lead frame having lead electrodes, a reflector arranged with the lead frame, and a light-emitting semiconductor chip accommodated in the reflector and having electrodes connected to the lead electrodes by a flip-chip bonding method, wherein: a gap between the lead frame and the light-emitting semiconductor chip is filled with a cured underfill material, and a cured silicon oxide film of 0.05 to 10 ?m thickness is formed covering surfaces of the light-emitting semiconductor chip and reflector.

Abstract: A semiconductor device according to the present invention includes a substrate, a semiconductor element which is mounted on the substrate, a protecting film which covers at least a part of the semiconductor element, and an encapsulation resin which encapsulates the semiconductor element and the protecting film, wherein between the protecting film and the encapsulation resin, there is at least one gap in which the protecting film does not stick to the encapsulation resin. According to the above mentioned configuration, it is possible to provide a semiconductor device having a superior stress-relief performance.

Abstract: An epoxy resin composition including (A) an epoxy resin that is solid at room temperature and has a softening point of 40° C. to 110° C., (B) a curing agent that is solid at room temperature and has a softening point of not less than 40° C. to 110° C., (C) a curing accelerator, (D) an inorganic filler having a mass-average particle size of 0.05 to 5 ?m, (E) a diluent, and (F) a specific dimethyl silicone, in which at least one of the component (A) and the component (B) is silicone-modified is provided. The composition can be used in a silicon chip die attach method or to produce a semiconductor device containing a silicon chip, a substrate and a cured product of the composition, in which the silicon chip is bonded to the substrate via the cured product.

Abstract: A fiber-containing resin substrate for collectively sealing a semiconductor devices mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor devices forming surface of a wafer having semiconductor devices formed thereon, includes: a resin-impregnated fiber base material obtained by impregnating a fiber base material with a thermosetting resin and semi-curing or curing the thermosetting resin; and an uncured resin layer containing an uncured thermosetting resin and formed on one side of the resin-impregnated fiber base material.

Abstract: The present invention relates to coating systems and coating systems on substrates. In an embodiment, the invention includes an article including a substrate, a base layer disposed on the substrate, the base layer comprising a silane compound with a photoreactive group, or the reaction product of a silane compound with a photoreactive group, and a polymer layer disposed on the base layer, the polymer layer comprising a polymer terminally anchored to the base layer. In an embodiment, the invention includes a coating for an article. In an embodiment, the invention includes a method of depositing a coating onto a substrate.

Abstract: Provided are an olefin composition, filler and an optoelectronic device. One illustrative olefin composition may be effectively used as a filling material for various optoelectronic devices.

Abstract: The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following ingredients A to E: A: an epoxy resin; B: a silicone mixture containing the following ingredients b1 and b2, with a weight ratio of the ingredients b1 and b2 being from 5/95 to 25/75 in terms of b1/b2: b1: a silicone compound having an amino group in both ends thereof and having a weight average molecular weight of from 600 to 900, and b2: a silicone compound having an amino group in both ends thereof and having a weight average molecular weight of from 10,000 to 20,000; C: a phenol resin; D: a curing accelerator; and E: an inorganic filler containing the following ingredients e1 and e2: e1: a crystalline silica, and e2: a fused silica.

Abstract: A semiconductor device comprising curable polyorganosiloxane composites is provided where the composites contain at least 0.1 wt % of the 4th and/or 13th group elements of the periodic table. The cured polyorganosiloxane composites may be catalyst-free, have increased stability, and can be used as encapsulation resin at a temperature far lower than 300° C., have excellent light transmission properties (colorless transparency) in a wavelength region of from ultraviolet light to visible light, light resistance, heat resistance, resistance to moist heat and UV resistance, and has excellent adhesiveness toward metal, ceramics, and plastic surfaces over a long period of time.

Abstract: A process for fabricating an electronic component includes a liquid injection molding method for overmolding a semiconductor device. The liquid injection molding method includes: i) placing the semiconductor device in an open mold, ii) closing the mold to form a mold cavity, iii) heating the mold cavity, iv) injection molding a curable liquid into the mold cavity to overmold the semiconductor device, v) opening the mold and removing the product of step iv), and optionally vi) post-curing the product of step v). The semiconductor device may have an integrated circuit attached to a substrate through a die attach adhesive.

Abstract: A thermally conductive silicone composition comprises (A) an organopolysiloxane having a viscosity equal to or greater than 100 mPa·s at 25° C.; (B) aluminum powder having an average size of particles ranging from 0.1 to 100 ?m; (C) zinc oxide powder having an average size of particles ranging from 0.05 to 50 ?m; (D) (i) an organopolysiloxane containing univalent hydrocarbon groups which have unsaturated aliphatic bonds, (ii) an organopolysiloxane containing hydrocarbon groups which are free of unsaturated aliphatic bonds, or a mixture of constituents (i) and (ii); and (E) a silane compound or a product of partial hydrolyzation and condensation of said silane compound. The composition has high conductivity and excellent handleability.

Abstract: A power semiconductor module includes a circuit carrier including an insulation carrier having a top side on which a metallization layer is arranged. A power semiconductor chip is arranged on a side of the metallization layer facing away from the insulation carrier, and which has on a top side of the power semiconductor chip facing away from the circuit carrier an upper chip metallization composed of copper or a copper alloy having a thickness of greater than or equal to 1 ?m. An electrical connection conductor composed of copper or a copper alloy is connected to the upper chip metallization at a connecting location. A potting compound extends from the circuit carrier to at least over the top side of the power semiconductor chip and completely covers the top side of the power semiconductor chip, encloses the connection conductor at least in the region of the connecting location, and has a penetration of less than or equal to 30 according to DIN ISO 2137 at a temperature of 25° C.

Abstract: A semiconductor device comprising curable polyorganosiloxane composites is provided where the composites contain at least 0.1 wt % of the 4th and/or 13th group elements of the periodic table. The cured polyorganosiloxane composites may be catalyst-free, have increased stability, and can be used as encapsulation resin at a temperature far lower than 300° C., have excellent light transmission properties (colorless transparency) in a wavelength region of from ultraviolet light to visible light, light resistance, heat resistance, resistance to moist heat and UV resistance, and has excellent adhesiveness toward metal, ceramics, and plastic surfaces over a long period of time.

Abstract: A radiation-emitting and/or radiation-receiving semiconductor component comprising a radiation-emitting and/or radiation-receiving semiconductor chip, a molded plastic part which is transparent to an electromagnetic radiation to be emitted and/or received by the semiconductor component and by which the semiconductor chip is at least partially overmolded, and external electrical leads that are electrically connected to electrical contact areas of the semiconductor chip. The molded plastic part is made of a reaction-curing silicone molding compound. A method of making such a semiconductor component is also specified.

Abstract: Method for forming a low dielectric constant structure on a semiconductor substrate by CVD processing. The method comprises using a precursor containing chemical compound having the formula of (R1-R2)n-Si—(X1)4-n, wherein X1 is hydrogen, halogen, acyloxy, alkoxy or OH group, R2 is an optional group and comprises an aromatic group having 6 carbon atoms and R1 is a substituent at position 4 of R2 selected from an alkyl group having from 1 to 4 carbon atoms, an alkenyl group having from 2 to 5 carbon atoms, an alkynyl group having from 2 to 5 carbon atoms, Cl or F; n is an integer 1-3. The present precursors allow for a lowering of the electronic dielectric constant compared to conventional dielectric materials, such as silicon dioxide or phenyl modified organo-containing silicon dioxide.

Abstract: A curable silicone rubber composition, comprising: (A) an organopolysiloxane containing two or more alkenyl groups within each molecule, (B) an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to silicon atoms within each molecule, (C) a metal-based condensation reaction catalyst, (D) a platinum group metal-based addition reaction catalyst, and (E) an adhesion-imparting agent, wherein among the refractive indices of component (A), a mixture of component (A) and component (B), and component (E), the difference between the maximum refractive index and the minimum refractive index is not more than 0.03.

Abstract: A thermosetting composition for an optical semiconductor containing a silicone resin having a cyclic ether-containing groups and a thermosetting agent capable of reacting with said cyclic ether-containing group, wherein the silicone resin has, as the principal components, a structural unit expressed by the following formula (1) and a structural unit expressed by the following formula (2). The content of the structural unit expressed by the formula (1) is 0.6 to 0.95 (on a molar basis) and the content of the structural unit expressed by the formula (2) is 0.05 to 0.4 (on a molar basis) when total number of the structural units contained is taken as 1, and the content of the cyclic ether-containing group is 5 to 40 mol %: [formula 1] (R1R2SiO2/2)??(1) and [formula 2] (R3SiO3/2)??(2) at least one of R1, R2 and R3 represents a cyclic ether-containing group, R1, R2 and R3 other than the cyclic ether-containing group represent hydrocarbon having 1 to 8 carbon atoms or fluoride thereof.

Abstract: A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.

Abstract: In accordance with the present teachings, semiconductor devices and methods of making semiconductor devices and dielectric stack in an integrated circuit are provided. The method of forming a dielectric stack in an integrated circuit can include providing a semiconductor structure including one or more copper interconnects and forming an etch stop layer over the semiconductor structure in a first processing chamber. The method can also include forming a thin silicon oxide layer over the etch stop layer in the first processing chamber and forming an ultra low-k dielectric layer over the thin silicon oxide layer in a second processing chamber, wherein forming the thin silicon oxide layer improves adhesion between the etch stop layer and the ultra low-k dielectric as compared to a dielectric stack that is devoid of the thin silicon oxide layer between the etch stop layer and the ultra low-k dielectric.

Abstract: A substrate for a pre-soldering material and a fabrication method of the substrate are proposed. The substrate having at least one surface formed with a plurality of conductive pads is provided. An insulating layer is formed over the surface of the substrate in such a way that a top surface of each of the conductive pads is exposed. Next, a conductive film and a resist layer are formed in sequence on the insulating layer and the conductive pads, wherein a plurality of openings are formed in the resist layer to expose a part of the conductive film above the conductive pad. Then, a pre-soldering material is deposited over the conductive pad by stencil printing or electroplating process.

Abstract: A method for producing a semiconductor device that uses a silicone-based die bonding material with high heat resistance and a low elastic modulus is provide. The method includes the steps of: applying a heat-curable silicone-based die bonding material to a substrate, placing a semiconductor element on the coated surface of the substrate, heating and curing the heat-curable silicone-based die bonding material, removing low molecular weight siloxane components adhered to the semiconductor element, and subsequently conducting wire bonding. The adverse effects of low molecular weight siloxanes are suppressed, and highly reliable wire bonding is attained.

Abstract: A bump is formed on each element electrode of a semiconductor device, and a thermoplastic resin sheet is aligned in position with the semiconductor device. The sheet and the semiconductor device are subjected to hot pressing to melt the sheet, forming a thermoplastic resin portion that covers a portion other than the end surface of each bump of the semiconductor device. The thermoplastic resin portion obtained after the hot pressing is cut.

Abstract: A heat softening thermally conductive composition comprises: a matrix comprising a silicone resin, and a thermally conductive filler. The composition can be used as a thermal interface material in electronic devices. The composition is formulated to have any desired softening temperature.