Abstract: A semiconductor device includes a first wiring layer having a first wiring pitch and a second wiring layer having a second wiring pitch that differs from the first wiring pitch. The device further includes a third wiring layer which connects the first wiring layer and the second wiring layer and has a wiring incident angle of less than 45 degrees to at least the first wiring layer.

Abstract: A physically secure processing assembly is provided that includes dies mounted on a substrate so as to sandwich the electrical contacts of the dies between the dies and the substrate. The substrate is provided with substrate contacts and conductive pathways that are electrically coupled to the die contacts and extend through the substrate. Electrical conductors surround the conductive pathways. A monitoring circuit detects a break in continuity of one or more of the electrical conductors, and preferably renders the assembly inoperable. Preferably, an epoxy encapsulation is provided to prevent probing tools from being able to reach the die or substrate contacts.

Abstract: Multi-layer semiconductor devices and methods for their assembly are described in which the IC packages are endowed with vertical passive delay cells in order to approximately equalize, within selected design tolerances, the signal propagation delays among electrical traces within the package.

Abstract: A high-frequency Electromagnetic Bandgap (EBG) motion sensor device, and a method for making such a device are provided. The device includes a substantially planar substrate including multiple conducting vias forming a periodic lattice in the substrate. The vias extend from the lower surface of the substrate to the upper surface of the substrate. The device also includes a movable defect positioned in the periodic lattice. The movable defect is configured to move relative to the plurality of vias. A resonant frequency of the Electromagnetic Bandgap (EBG) motion sensor device varies based on movement of the movable defect.

Abstract: A decoupling capacitor, a wafer stack package including the decoupling capacitor, and a method of fabricating the wafer stack package are provided. The decoupling capacitor may include a first electrode formed on an upper surface of a first wafer, a second electrode formed on a lower surface of a second wafer, and an adhesive material having a high dielectric constant and combining the first wafer with the second wafer. In the decoupling capacitor the first and second electrodes operate as two electrodes of the decoupling capacitor, and the adhesive material operates as a dielectric of the decoupling capacitor.

Abstract: A method of manufacturing an electronic component includes the steps of: a) forming via holes penetrating through a first semiconductor substrate and a second semiconductor substrate which are bonded together by way of a connection layer; b) pattern-etching the second semiconductor substrate using the connection layer as an etch-stop layer to form trenches communicated with the via holes; and c) integrally forming first via plugs buried in the via holes and pattern wirings buried in the trenches through plating.

Abstract: Thinning and stacking are essential for circuit modules used for mobile devices of various kinds, smart cards, memory cards and the like. These demands make the manufacture of the circuit modules more complicated or less reliable due to delamination. A circuit module of a multilayer structure is provided which is formed by embedding semiconductor chips and passive components in a sheet made from a thermoplastic resin; folding a module sheet, which is formed of circuit blocks provided with wiring patterns thereon, at the boundaries of the circuit blocks so as to be stacked into layers; and thermal-bonding and integrating the module sheet by applying heat and pressure. As a result, a highly reliable circuit module can be manufactured in a simple manner.

Abstract: A carrier substrate, or interposer, for use in a chip-scale package includes a material, such as a semiconductive material, that has a coefficient of thermal expansion that is the same or similar to that of the semiconductor device to be secured thereto. The interposer may also include a rerouting element laminated over the remainder of the interposer and including one or more dielectric layers, as well as a conductive layer for rerouting the bond pad locations of a semiconductor device with which the interposer is to be assembled. The interposers may be fabricated on a “wafer scale.” Accordingly, a semiconductor device assembly may include a first, semiconductor device-carrying substrate and a second, interposer-comprising substrate. Regions of the second substrate that comprise the boundaries between adjacent interposers may be thinner than other regions of the second substrate, including the regions from which the interposers are formed.

Abstract: A system may include a conductive plane defining a non-conductive antipad area and a second non-conductive area extending from the antipad area in at least a first direction, a dielectric plane coupled to the conductive plane, a conductive via passing through the dielectric plane and the antipad area, a conductive pad connected to an end of the conductive via, and a conductive trace coupled to the dielectric plane and connected to the conductive pad, the conductive trace extending from the conductive pad in the first direction.

Abstract: A method for forming a through-silicon via includes the steps of defining a groove in each chip of a wafer which has a plurality of semiconductor chips; applying liquid polymer on the wafer to fill the groove; forming an insulation layer on a sidewall of the groove through patterning the polymer; forming a metal layer to fill the groove which is formed with the insulation layer on the sidewall thereof; and back-grinding a backside of the wafer to expose the metal layer filled in the groove.

Abstract: In some embodiments, a micro-via structure design for high performance integrated circuits is presented. In this regard, an integrated circuit chip package is introduced having a dielectric layer, a plated throughhole in the dielectric layer, and a micro-via coupled with the plated throughhole, wherein the micro-via forms a path around an axis. Other embodiments are also disclosed and claimed.

Abstract: There is disclosed a semiconductor device comprising at least one semiconductor element, one chip mounting base being provided at least one first interconnection on one major surface thereof and at least one second interconnection on the other major surface thereof, and the semiconductor element being electrically connected to at least the one first interconnection and mounted on the one major surface, a sealing member being provided on the one major surface of the chip mounting base and covering the semiconductor element and the first interconnection, at least one third interconnection being provided on a surface of the sealing member, and at least one fourth interconnection being provided in the sealing member and the chip mounting base, and electrically connected to the first interconnection, the second interconnection, and the third interconnection.

Abstract: An integrated chip package structure and method of manufacturing the same is by adhering dies on an organic substrate and forming a thin-film circuit layer on top of the dies and the organic substrate. Wherein the thin-film circuit layer has an external circuitry, which is electrically connected to the metal pads of the dies, that extends to a region outside the active surface of the dies for fanning out the metal pads of the dies. Furthermore, a plurality of active devices and an internal circuitry is located on the active surface of the dies. Signal for the active devices are transmitted through the internal circuitry to the external circuitry and from the external circuitry through the internal circuitry back to other active devices. Moreover, the chip package structure allows multiple dies with different functions to be packaged into an integrated package and electrically connecting the dies by the external circuitry.

Abstract: A build-up layer packaging comprising a first ceramic substrate, a second ceramic substrate, and a circuit layer is provided. The first ceramic substrate has a through hole to dispose a die therein. The second ceramic substrate, attached to a common lower surface of the ceramic substrate and the die, further has a plurality of openings to expose the pads of the die. The openings are filled with plugs electrically connecting to the pads. The circuit layer is formed under the second ceramic substrate to transmit signals generated by the die outward.

Abstract: A semiconductor device and a fabricating method thereof are provided. A PMD layer is formed on a semiconductor substrate, and at least one IMD layer is formed on the PMD layer. A through-electrode penetrates through the semiconductor substrate, the PMD layer, and each IMD layer, and a heat emission wiring is formed on an underside of the semiconductor substrate.

Abstract: An IC package is disclosed that comprises a core region disposed between upper and lower build-up layer regions. In one embodiment, the core region comprises a low modulus material. In an alternative embodiment the core region comprises a medium modulus material. In an alternative embodiment, the core material is selected based upon consideration such as its modulus, its coefficient of thermal expansion, and/or resulting total accumulated strain. In an alternative embodiment, boundaries with respect to the softness of the core material are established by considering the relative density in opposing conductive build-up layers above and below the core region.

Abstract: A multilayer wiring substrate has a plurality of wiring layers and interlayer insulating films, as well as a via of a type which connects between adjacent wiring layers and a via of a type which connects upper and lower wiring layers through two or more interlayer insulating films, wherein at least some of the interlayer insulating films are formed of inorganic insulating films, and the via of the type, which connects upper and lower wiring layers through two or more interlayer insulating films, is formed as a single via which penetrates through the interlayer insulating films all of which are formed of the inorganic insulating films. Preferably, all of the insulating films are formed of the inorganic insulating films, and the inorganic insulating films are formed by a low-temperature CVD method. The thickness of the inorganic insulating films is preferably between 0.5 and 2.0 ?m.

Abstract: A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric, a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.

Abstract: A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric, a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.

Abstract: In a printed circuit board, a semiconductor including plural power supply terminals and a semiconductor chip is mounted onto a mounting surface of a printed wiring board, and a bypass capacitor for reducting a power ground noise is provided. Another bypass capacitor, which is connected to the bypass capacitor only within an IC chip is provided to inhibit the power ground noise from causing not only a variation in timing of the IC chip and a malfunction thereof but also a malfunction of another IC chip and the generation of an EMI noise in a case where the power ground noise propagates to a power supply side.

Abstract: An MCM-D substrate in accordance with the present invention includes a silicon substrate provided with a Si-bump and a ground bump formed thereon, an insulating layer formed on the silicon substrate, a metal layer patterned on the insulating layer, a dielectric layer, a transmission line, a flip-chip bonding bump and a mounted component. The mount component is installed on a top of the Si-bump by a flip-chip bonding bump and the Si-bump prevents a dielectric layer from placing below the flip-chip bonding bump unlike a conventional technology. A ground bump makes an electric contact between a metal formed on a ground and a metal on the dielectric layer through a deep-via free process.

Abstract: A semiconductor device includes a substrate having first and second surfaces, the substrate having an opening; a first adhesive layer provided on the first surface; a second adhesive layer provided under the second surface; a third adhesive layer provided around the opening; a semiconductor chip arranging a plurality of chip bonding pads in a central portion of the semiconductor chip and adhered on the third adhesive layer; substrate bonding pads adhered under the second adhesive layer; bonding wires connecting the chip bonding pads to the substrate bonding pads; and an encapsulating resin provided around the semiconductor chip.

Abstract: A signal transmission structure suitable for a multi-layer circuit substrate comprising a core layer and at least a dielectric layer is provided. The signal transmission structure according to the present invention comprises a first via landing pad and a reference plane. The first via landing pad is disposed on a first surface of the core layer, and covering one end of the through hole of the core layer. The dielectric layer covers the first via landing pad and the first surface of the core layer. And the first reference plane is disposed above the dielectric layer, having a first opening disposed above one end of the through hole. Wherein, the area where the first reference plane is projected on the first surface of the core layer does not overlap with the area where the first via landing pad is projected on the first surface of the core layer.

Abstract: A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

Abstract: The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I/O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

Abstract: A semiconductor wafer scale package system is provided including providing a semiconductor substrate having a through-hole via with a conductive coating, forming a filled via by filling the through-hole via with a conductive material, coupling a package substrate to the filled via, and singulating a chip scale package from the semiconductor substrate and the package substrate.

Abstract: A method including modifying a characteristic impedance along a length of a plating bar of a substrate package. An apparatus including a package substrate including a plurality of transmission lines therethrough, a portion of the plurality of transmission lines each including a plating bar coupled thereto, wherein the plating bar comprises portions having different characteristic impedance along its length. A system including a computing device including a microprocessor, the microprocessor coupled to a printed circuit board through a substrate, the substrate including a plurality of transmission lines therethrough, a portion of the plurality of transmission lines each including a plating bar coupled thereto, wherein the plating bar comprises portions having different characteristic impedance along its length.

Abstract: A substrate for mounting a device is disclosed. The substrate includes at least one transition for providing an RF connection to a lead of the device, the lead extending from a device input to an otherwise free end. The transition comprises two spaced apart electrically coupled members, the first member occupying at least the same area on a top surface of the substrate as the device lead to which it is to connect, and the second member lying in register with the first member. The transition comprises an input, which is located at the end of the second member which is nearest the free end of the device lead and an output which is located at the opposite end of the first member and which is in register with the device input. The electrical characteristics of the transition are such that the electrical length from the input of the transition to the output of the transition is approximately equal to one half of a wavelength over a given operating frequency band of the device.

Abstract: A metal core and a package board having the metal core are disclosed. A package board, which comprises a metal core having a plurality of protrusions formed in a lengthwise direction on its surface, an insulation layer stacked on the metal core, and an inner layer circuit formed on the insulation layer for signal connection between a chip and the exterior, has a greater surface area due to the protrusions, so that it is superior in terms of heat releasing and of adhesion to the insulation layer, and has superior mechanical properties with respect to warpage.

Abstract: A three-dimensional stacked semiconductor package includes first and second chips, first and second adhesives, first and second wire bonds, a lead and an encapsulant. The chips are disposed on opposite sides of the lead, and the wire bonds contact the same side of the lead.

Abstract: An embedded capacitors with interdigitated structure for a package carrier or a printed circuit board comprises a plurality of stacked conductive layers, at least one first via connecting structure and at least one second via connecting structure. In order to enhance the capacitance and the layout efficiency, this case fully utilizes the spaces between the via connecting structures for disposing at least one extending line extended from the via connecting structure to simultaneously increase side-to-side and layer-to-layer capacitances. Thus, the present invention provides a capacitance larger than that of conventional design.

Abstract: A semiconductor module is formed by alternately stacking resin boards on which semiconductor chips are mounted and sheet members having openings larger than the semiconductor chips and bonded to the resin boards. One of the resin boards located at the bottom has a thickness larger than that of each of the other resin boards. First buried conductors formed in each of first resin boards are arranged to form a plurality of lines surrounding a region on which a semiconductor chip is to be mounted. The spacing between the first buried conductors increases in succession toward the outermost line. Second buried conductors formed in each of sheet members are arranged to form a plurality of lines surrounding an opening. The spacing between the second buried conductors increases in succession toward the outermost line.

Abstract: Numerous embodiments of a stacked device underfill and a method of formation are disclosed. In one embodiment, a method of forming stacked semiconductor device with an underfill comprises forming one or more layers of compliant material on at least a portion of the top surface of a substrate, said substrate, curing at least a portion of the semiconductor device, selectively removing a portion of the one or more layers of compliant material, and assembling the substrate into a stacked semiconductor device.

Abstract: A method performed on a wafer having multiple chips, each including a doped semiconductor and substrate, involves etching an annulus trench partially into the substrate, metalizing the annulus trench with a metal, etching a via trench within the periphery of the annulus trench, making a length of the via trench electrically conductive, and thinning the substrate to expose the metal and the electrically conductive material.

Abstract: A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).

Abstract: The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I/O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

Abstract: The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I/O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

Abstract: The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I/O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

Abstract: The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I/O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

Abstract: A mask used for exposing a porous substrate to form a first region and a second region, the first region being filled with a conductive material piercing through the entire thickness of the porous substrate to constitute an interfacial conductive portion, the second region being filled with a conductive material not piercing the entire thickness of the porous substrate to constitute a non-interfacial conductive portion. The mask includes a first light-transmitting region for exposing the first region, and a second light-transmitting region for exposing the second region, said second light-transmitting region including an aggregation of fine patterns of which an average aperture ratio is not more than 50% of an average aperture ratio of the first light-transmitting region and a size of said fine patterns of the second light-transmitting region being in the range of 0.1 ?m to 10 ?m.

Abstract: A multi-layer stripline assembly interconnection includes a first stripline sub-assembly having a first surface and a first plurality of vias disposed in the first surface adapted to receive a plurality of solid metal balls. The interconnection further includes a second stripline sub-assembly having a second plurality of vias disposed in the first surface of the second sub-assembly adapted to be aligned with the first plurality of vias. Reflowed solder is wetted to the second plurality of vias and to the corresponding plurality of solid metal balls.