Abstract: A method for producing a semiconductor package including a main semiconductor chip having a semiconductor circuit formed on one surface thereof, at least one subsidiary semiconductor chip stacked on the other surface of the main semiconductor chip, and an encapsulation resin covering the subsidiary semiconductor chip.

Abstract: A stacked die semiconductor package includes: a substrate, having a first surface and an opposite surface thereto; a plurality of dice, structured for being stacked one on top of the other on the first surface of the substrate, including at least a first die which is mounted closest to the first surface, a second die mounted thereupon and having a larger footprint area than the first die, and a top die having a smaller footprint area than the underlying die thereof, and each having a plurality of contact pads and a plurality of wires for electrically connecting the dice to the first surface of the substrate; at least one interposer between the plurality of dice; advantageously, said top die is electrically directly connected to one of the underlying dice. A method for the assembly of a stacked die semiconductor package is provided.

Abstract: A form standard provides a physical form that allows many of the varying package sizes found in the broad family of CSP packages to be used to advantage while employing a standard connective flex circuitry design that is disposed about the form. In a preferred embodiment, the form standard will be devised of heat transference material such as copper to improve thermal performance.

Abstract: A semiconductor package is provided. A semiconductor package has a die pad and a plurality of bonding fingers. A spacer is attached to the die pad, and a large die is attached to the spacer. The large die is wire bonded to the plurality of bonding fingers using a plurality of bonding wires. The die pad, plurality of bonding fingers, spacer, large die, and bonding wires are encapsulated to form the semiconductor package. The semiconductor package can be either a single or dual row package, such as a QFN or BGA package.

Abstract: A method includes bonding a first side of a metal shim to a silicon shim, removing metal from the metal shim to form a plurality of cleared metal lanes in accordance with a pattern, bonding a readout integrated circuit having a plurality of saw lanes in accordance with the pattern to a second side of the metal shim to form a wafer assembly wherein the plurality of saw lanes is aligned with the plurality of cleared metal lanes, and dicing the wafer assembly.

Abstract: A stacked semiconductor die assembly includes at least two partially offset semiconductor dice with bond pads located adjacent at least one peripheral side thereof supported on a redistribution element formed of a material of substantially similar CTE to that of the dice, and a paddle-less lead frame secured to the redistribution element during fabrication, including encapsulation. The assembly is configured to be substantially vertically symmetrical with respect to inner ends of lead fingers of the lead frame to facilitate uniform encapsulant flow. The semiconductor die assembly may be configured in a package with leads extending from two sides thereof, such as a thin small outline package (TSOP), or four sides thereof, such as a quad flat pack (QFP).

Abstract: A semiconductor device including a first semiconductor element mounted on a first surface of a base plate, wherein solder balls are formed on a second opposite surface of the base plate such that the second opposite surface includes an area without solder balls. At least one second semiconductor element is mounted to the base plate at the area of the second surface without solder balls. The at least one semiconductor element may be mounted to the base plate using solder joints.

Abstract: A semiconductor device according to an embodiment of the present invention includes a semiconductor chip. The semiconductor chip includes a semiconductor substrate, an interconnect layer, a back electrode (first working electrode), and a back dummy electrode (first dummy electrode). On the semiconductor substrate, the interconnect layer including an interconnect is provided. On a back surface of the semiconductor substrate, the back electrode is provided in electrical connection to the interconnect. On the back surface, also the back dummy electrode is provided, which is electrically insulated from the interconnect.

Abstract: An integrated circuit package comprising at least one semiconductor chip of a first material, wherein the semiconductor chip comprises an active part and a passive part that is connected to each other, the passive part comprises at least one cavity, the at least one cavity is filled with a filler of a second material, and the thermal conductivity of the second material is higher than the thermal conductivity of the first material.

Abstract: Provided is a memory module. The memory module may include a mounting substrate including a plurality of first substrate pads disposed on a top surface of the mounting substrate, a first semiconductor package disposed on a top surface of the mounting substrate, the first semiconductor package having a first frame and first external connection terminals which extend through the outside of the first frame and are disposed on the first substrate pads, a first connection member including first connection terminals disposed between the first external connection terminals and the first substrate pads and a pressure fixing member compressing the first connection member to electrically connect the first external connection terminals and the first substrate pads by the medium of the first connection terminals.

Abstract: A multidie semiconductor device assembly or package includes an interposer comprising a substrate with at least one receptacle therethrough. A plurality of semiconductor device components (e.g., semiconductor devices) may be assembled with the interposer. For example, at least one contact pad of a semiconductor device component adjacent to one surface of the interposer may be electrically connected to a corresponding contact pad of another semiconductor device component positioned adjacent to an opposite surface of the interposer. As another example, multiple semiconductor device components may be at least partially superimposed relative to one another and at least partially disposed within a receptacle of the interposer.

Abstract: A semiconductor module comprises: semiconductor packages each comprising a semiconductor element, a wiring substrate having a wiring member connected to the semiconductor element and external terminals connected to the wiring member, and a first organic film formed on a side of the semiconductor element opposed to a side toward the wiring substrate; and a mount substrate, on which the semiconductor element is mounted. First of the semiconductor packages and second of the semiconductor packages are stacked. Second organic films are provided between the wiring substrate of the first semiconductor package and the first organic film of the second semiconductor package and between the mount substrate and the semiconductor package.

Abstract: Multi-chip package includes first through Nth semiconductor chips, each of which includes an input/output pad, an input/output driver coupled to the input/output pad, and an internal circuit. Each of the first through Nth semiconductor chips includes an internal pad for coupling the internal input/output driver and the internal circuit. The internal pads of the first through Nth semiconductor chips are coupled to each other such as via a common pad installed at a substrate. The input/output pad of the first semiconductor chip directly receives an input/output signal transmitted via a corresponding pin of the multi-chip package. The second through Nth semiconductor chips indirectly receive the input/output signal via the internal pads coupled to each other. The multi-chip package can improve signal compatibility by maintaining a parasitic load of a pin to at least the level of a single chip, when a signal is transmitted to the pin at high speed.

Abstract: A semiconductor system having a substrate (101) including a rigid insulating interposer (110) with a high modulus and a top (140) and a bottom (150) low-modulus tape with flip-attached semiconductor chips (120, 130). The assembled chips, with the passive surfaces facing each other, are located in an opening (114) of the interposer, which has a thickness (111) equal to or smaller than the sum of the assembled two chips. Adhesive material (160) holds the tapes parallel to the interposer and the chip surfaces together. Solder balls (180) and discrete components (170) may be attached to the outside surfaces of the tapes.

Abstract: A stacked die package includes a substrate or interposer board that includes a contact area on a top surface and landing pads surrounding the contact area. Solder pads are disposed on an opposite side of the substrate. The solder pads are electrically connected with the landing pads by inner board wiring. A reconstituted die, which includes a die surrounded by a frame, is mounted over the substrate. A top die is mounted over the reconstituted die. Both the reconstituted die and the top die are electrically connected to the substrate, e.g., by wire bonds.

Abstract: Disclosed is a semiconductor device packaging technique that is capable of resolving a problem of instability of bonding wires when stacking a plurality of semiconductor chips. The technique is also capable of realizing a slim, light and small package. The semiconductor device package includes a substrate having a substrate pad on a surface thereof, one or more memory chips stacked on the substrate with each memory chip having a pad connected to a common pin receiving a common signal applied to all the memory chips, an interposer chip stacked on the substrate and having an interconnection wire connected to the memory chip pad, the common pin of each of the memory chips being electrically connected to the interconnection wire via the memory chip pad, and a logic chip stacked on the substrate and having a bypass circuit which electrically connects or disconnects the interconnection wire to or from the substrate pad.

Abstract: A stacked-type chip package structure including a substrate, a first chip, bonding wires, a second chip and B-stage conductive bumps is provided. The first chip is disposed on the substrate, and it has first bonding pads disposed on an active surface thereof. Besides, the first bonding pads are electrically connected to the substrate through the bonding wires. The second chip is disposed above the first chip, and it has second bonding pads disposed on an active surface thereof. The second bonding pads of the second chip are electrically connected to the first bonding pads of the first chip through the B-stage conductive bumps respectively, and each B-stage conductive bump covers a portion of the corresponding bonding wire.

Abstract: A stackable package substrate has an opening shaped and dimensioned to accommodate a mold cap of a package upon which the stackable package is to be mounted. On the die attach surface, the frame substrate accommodates a die attach margin adjacent at the edge of the opening; and a row of wire bond sites arranged along at an outer frame edge, for electrical interconnection. The frame substrate accommodates z-interconnect ball pads arranged to align with corresponding z-interconnect pads on the substrate of a package. A stackable package has a frame substrate. A stacked package assembly includes a second package mounted on a first package using peripheral solder ball z-interconnect, in which the first package includes a die enclosed by a mold cap and in which the second package includes one die mounted on the frame substrate.

Abstract: Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.

Abstract: A stack package comprises a substrate having a circuit pattern; at least two semiconductor chips stacked on the substrate, having a plurality of through-via interconnection plugs and a plurality of guard rings which surround the respective through-via interconnection plugs, and connected with each other by the medium of the through-via interconnection plugs; a molding material for molding an upper surface of the substrate including the stacked semiconductor chips; and solder balls mounted to a lower surface of the substrate.

Abstract: There is provided a small and high-performance System in Package (SiP) suitable for high-density mounting. A System in Package (SiP) has a stack structure such that two memory chips are stacked and mounted over the main surface of a wiring substrate, a microcomputer chip is stacked and mounted over the upper part thereof, and the chips are sealed by a mold resin. Each of the memory chips is constructed so as to transmit and receive data to/from the outside of the system via the microcomputer chip. The microcomputer chip is constructed of a multiport structure having various interfaces between it and the outside of the system in addition to an interface between it and the inside of the system. The number of terminals (pins) of the microcomputer chip is much larger than that of the memory chips.

Abstract: A method of wafer stacking packaging. The method comprises providing a die array including a plurality of singulated first dies cut from a first wafer; providing a second wafer with inseparate the second dies and an adhesive layer on an active surface thereof; pre-cutting the second wafer to a specified depth from the active surface thereof; stacking the active surface of second wafer onto a backside of the first dies, wherein each of the second dies only stack on one of the first dies; thinning the second wafer from the backside thereof to form a plurality of singulated the second dies stacked on the first dies simultaneously.

Abstract: An inventive electronic device, such as a multi-chip module (MCM), a Single In-line Memory Module (SIMM), or a Dual In-line Memory Module (DIMM), includes a base, such as a printed circuit board, having a surface on which flip-chip pads and wire-bondable pads are provided. The flip-chip pads define an area on the surface of the base at least partially bounded by the wire-bondable pads. A first integrated circuit (IC) die is flip-chip bonded to the flip-chip pads, and a second IC die is back-side attached to the first IC die and ten wire-bonded to the wire-bondable pads. As a result, the flip-chip mounted first IC die is stacked with the second IC die in a simple, novel manner.

Abstract: A physical quantity sensor includes a package, a circuit chip disposed and held in the package, a sensor chip stacked and fixed on the circuit chip, and a wiring member having flexibility, through which the circuit chip and the package are electrically and mechanically bonded together. In the physical quantity sensor, unwanted external vibrations transmitted to the sensor chip are reduced without an external vibration dumping system such as a rubber pad, because the wiring member weakens the vibrations.

Abstract: Provided are a stack chip and a stack chip package having the stack chip. Internal circuits of two semiconductor chips are electrically connected to each other through an input/output buffer connected to an external connection terminal. The semiconductor chip has chip pads, input/output buffers and internal circuits connected through circuit wirings. The semiconductor chip also has connection pads connected to the circuit wirings connecting the input/output buffers to the internal circuits. The semiconductor chips include a first chip and a second chip. The connection pads of the first chip are electrically connected to the connection pads of the second chip through electrical connection means. Input signals input through the external connection terminals are input to the internal circuits of the first chip or the second chip via the chip pads and the input/output buffers of the first chip, and the connection pads of the first chip and the second chip.

Abstract: In a stacked chip configuration, and manufacturing methods thereof, the gap between a lower and an upper chip is filled completely using a relatively simple process that eliminates voids between the lower and upper chips and the cracking and delamination problems associated with such voids. The present invention is applicable to both chip-level bonding and wafer-level bonding approaches. A photosensitive polymer layer is applied to a first chip, or wafer, prior to stacking the chips or stacking the wafers. The photosensitive polymer layer is partially cured, so that the photosensitive polymer layer is made to be structurally stable, while retaining its adhesive properties. The second chip, or wafer, is stacked, aligned, and bonded to the first chip, or wafer, and the photosensitive polymer layer is then cured to fully bond the first and second chips, or wafers. In this manner, adhesion between chips/wafers is greatly improved, while providing complete gap fill.

Abstract: The present invention provides a system and method for selectively stacking and interconnecting leaded packaged integrated circuit devices with connections between the feet of leads of an upper IC and the upper shoulder of leads of a lower IC while conductive transits that implement stacking-related intra-stack connections between the constituent ICs are implemented in multi-layer interposers or carrier structures oriented along the leaded sides of the stack, with selected ones of the conductive transits electrically interconnected with other selected ones of the conductive transits.

Abstract: A system includes a semiconductor component having a base die and a secondary die flip chip mounted to the base die. The base die includes a set of stacking contacts for flip chip mounting the secondary die to the base die, and a set of interconnect contacts configured as an internal signal transmission system, and a physical structure for supporting a terminal contact system of the package component. The component also includes an encapsulant on the base die encapsulating the interconnect contacts, an underfill layer between the dice, and terminal contacts configured for flip chip mounting the package component to a supporting substrate.

Abstract: Semiconductor assemblies include a first package, each having at least one die affixed to, and electrically interconnected with, a die attach side of the first package substrate, and a second substrate having a first side and a second (“land”) side, mounted over the molding of the first package with the first side of the second substrate facing the die attach side of the first package substrate. Z-interconnection of the package and the substrate is by wire bonds connecting the first and second substrates. The assembly is encapsulated with both the land side of the second substrate and a portion of the land side of the first package substrate exposed, so that second level interconnection and interconnection with additional components may be made.

Abstract: A semiconductor device including a first semiconductor element mounted on a first surface of second semiconductor element, wherein solder balls are formed on the first surface of the second semiconductor element such that the first surface includes an area without solder balls. At least one first semiconductor element is mounted to the second semiconductor element at the area of the first surface without solder balls. The at least one first semiconductor element may be mounted to the second semiconductor element using solder joints.

Abstract: A multi-chip module comprises a first package and at least a second package. The first package includes a substrate, at least a first chip, an encapsulant, and a plurality of solder balls. The substrate has an upper surface, a lower surface, and at least an opening. The first chip is disposed on the upper surface of the substrate and is electrically connected to the substrate. The encapsulant is formed on the upper surface of the substrate to seal the first chip. In addition, the solder balls are placed on the lower surface of the substrate. The second package is embedded in the opening of the substrate of the first package. The second package includes a plurality of electrical terminals which are exposed out of the first package to be similar to the solder balls for external connection. Accordingly, the solder balls and the electrical terminals can be used as SMT connection terminals of the multi-chip module.

Abstract: In one embodiment, the semiconductor memory device includes at least a first semiconductor memory die, and a surface of the semiconductor memory device includes a plurality of connectors. At least one of the plurality of connectors is electrically connected to the first semiconductor memory die. The plurality of connectors include at least first and second control signal connectors. The first control signal connector is for a first control signal of a first type, the second control signal connector is for a second control signal of the first type, and the first and second control signal connectors are disposed in different areas of the surface. For example, the first type may be a chip select signal, a clock enable signal, or an on die termination enable signal.

Abstract: Backside connections for 3D integrated circuits and methods to fabricate thereof are described. A stack of a first wafer over a second wafer that has a substrate of the first wafer on top of the stack, is formed. The substrate of the first wafer is thinned. A first dielectric layer is deposited on the thinned substrate. First vias extending through the substrate to the first wafer are formed in the first dielectric layer. A conductive layer is deposited in the first vias and on the first dielectric layer to form thick conductive lines. Second dielectric layer is formed on the conductive layer. Second vias extending to the conductive lines are formed in the second dielectric layer. Conductive bumps extending into the second vias and offsetting the first vias are formed on the second dielectric layer.

Abstract: A stack type semiconductor package uses rigid, C-shaped guide substrates that hold semiconductor packages stacked in place and which also provide signal pathways between the stacked semiconductors and contact surfaces of the package. The C-shaped guide eliminate short circuits caused by prior art lead wires.

Abstract: A unit semiconductor chip and stacked semiconductor package and method of manufacturing with center bonding pads and at least one circuit layer to reduce the length of bonding. The unit semiconductor chip includes a first series of bonding wires connected to a plurality of center bonding pads of a semiconductor chip, at least one circuit layer connected to the first series of bonding wires and including a series of circuit layer wiring patterns, and a second series of bonding wires connecting the series of circuit layer wiring patterns and a series of wiring patterns. The stacked semiconductor package further includes a second series of wiring patterns, connected to the first series of wiring patterns, the a second series of wiring patterns and the series of circuit layer wiring patterns providing connections to adjacent lower and upper unit semiconductor packages, respectively.

Abstract: A semiconductor system having a substrate (101) including a rigid insulating interposer (110) with a high modulus and a top (140) and a bottom (150) low-modulus tape with flip-attached semiconductor chips (120, 130). The assembled chips, with the passive surfaces facing each other, are located in an opening (114) of the interposer, which has a thickness (111) equal to or smaller than the sum of the assembled two chips. Adhesive material (160) holds the tapes parallel to the interposer and the chip surfaces together. Solder balls (180) and discrete components (170) may be attached to the outside surfaces of the tapes.

Abstract: A semiconductor package component includes a base die and a secondary die flip chip mounted to the base die. The base die includes a set of stacking contacts for flip chip mounting the secondary die to the base die, and a set of interconnect contacts configured as an internal signal transmission system, and a physical structure for supporting a terminal contact system of the package component. The package component also includes an encapsulant on the base die encapsulating the interconnect contacts, an underfill layer between the dice, and terminal contacts configured for flip chip mounting the package component to a supporting substrate. A method for fabricating the package component includes the steps of providing a base wafer containing a plurality of base dice, and flip chip mounting the secondary dice to the base dice on the base wafer.

Abstract: A stackable integrated circuit package system is provided forming a first integrated circuit die having an interconnect provided thereon, forming an external interconnect, having an upper tip and a lower tip, from a lead frame, mounting the first integrated circuit die on the external interconnect with the interconnect on the lower tip and below the upper tip, and encapsulating around the interconnect with an exposed surface.

Abstract: A stacked-type chip package structure including a substrate, a first chip, bonding wires, a second chip and B-stage conductive bumps is provided. The first chip is disposed on the substrate, and it has first bonding pads disposed on an active surface thereof. Besides, the first bonding pads are electrically connected to the substrate through the bonding wires. The second chip is disposed above the first chip, and it has second bonding pads disposed on an active surface thereof. The second bonding pads of the second chip are electrically connected to the first bonding pads of the first chip through the B-stage conductive bumps respectively, and each B-stage conductive bump covers a portion of the corresponding bonding wire.

Abstract: A system may include a first integrated circuit package including a first integrated circuit die and a first integrated circuit package substrate defining a first plurality of openings, a second integrated circuit package including a second integrated circuit die and a second integrated circuit package substrate defining a second plurality of openings, and a third substrate comprising a plurality of conductive projections. Each of the plurality of conductive projections may be disposed within a respective one of the first plurality of openings and a respective one of the second plurality of openings.

Abstract: The present invention provides a system and method for selectively stacking and interconnecting leaded packaged integrated circuit devices with connections between the feet of leads of an upper IC element and the upper shoulder of leads of a lower IC element while traces that implement stacking-related intra-stack connections between the constituent ICs are implemented in interposers or carrier structures oriented along the leaded sides of the stack and which extend beyond the perimeter of the feet of the leads of the constituent ICs or beyond the connective pads of the interposer. This leaves open to air flow, most of the transit section of the lower lead for cooling, but provides a less complex board structure for implementation of intra-stack connections.

Abstract: A large area transducer array comprising a substrate having a front side and a backside, a plurality of transducers disposed on the front side of the substrate and patterned in the form of a two-dimensional transducer array in the X-Y plane, a plurality of connectors disposed on the backside of the substrate where the connectors are electrically coupled to the transducer elements. Further, a stacked transducer array comprising an electronic device disposed in a first layer, a substrate including a front side and a backside, an electrical interconnect layer disposed on the substrate and a plurality of transducers disposed in a third layer where the transducers are electrically coupled to the electronic device disposed in the first layer.

Abstract: In an embodiment, a memory module includes a first group of multi chip packages, including one or more non-volatile memories, and a second group of multi chip packages, including one or more volatile memories, wherein the first and second groups of multi chip packages are electrically connected to a substrate. Various types of memory packages can be integrated into a single module that is mounted to the substrate, such as a printed circuit board, for improved size efficiency.

Abstract: A semiconductor multi-package module has stacked lower and upper packages, each package including a die attached to a substrate, in which the upper and lower substrates are interconnected by wire bonding, and in which the upper package is inverted. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a die, affixing an upper molded package including an upper substrate in inverted orientation onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: An apparatus and method of rerouting redistribution lines from an active surface of a semiconductor substrate to a back surface thereof and assembling and packaging individual and multiple semiconductor dice with such rerouted redistribution lines formed thereon. The semiconductor substrate includes one or more vias having conductive material formed therein and which extend from an active surface to a back surface of the semiconductor substrate. The redistribution lines are patterned on the back surface of the semiconductor substrate, extending from the conductive material in the vias to predetermined locations on the back surface of the semiconductor substrate that correspond with an interconnect pattern of another substrate for interconnection thereto.

Abstract: A three-dimensional package consisting of a plurality of folded integrated circuit chips (100, 110, 120) is described wherein at least one chip provides interconnect pathways for electrical connection to additional chips of the stack, and at least one chip (130) is provided with additional interconnect wiring to a substrate (500), package or printed circuit board. Further described, is a method of providing a flexible arrangement of interconnected chips that are folded over into a three-dimensional arrangements to consume less aerial space when mounted on a substrate, second-level package or printed circuit board.

Abstract: The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.

Abstract: A circuit structure may be formed in a substrate having a face and an open trench, where one or more chips are to be mounted. At least one bridge may extend across an intermediate portion of the trench, and optionally, may divide the trench into sections. A conductive adhesive layer may be applied to the substrate face and, if included, the bridge. One or more circuit chips may be mounted on the adhesive layer, with at least one edge of one circuit chip adjacent to the trench. Alternatively or additionally, an adhesive layer may be applied to a base of a chip and then mounted to the substrate face, in like fashion. The trench may accommodate excess adhesive flowing out from under the one or more chips, while the bridge retains the adhesive across the width of the trench. If the adhesive is conductive, this provides continuity of the conductive layer on the face of the substrate across the trench.

Abstract: A semiconductor package component includes a base die and a secondary die flip chip mounted to the base die. The base die includes a set of stacking contacts for flip chip mounting the secondary die to the base die, and a set of interconnect contacts configured as an internal signal transmission system, and a physical structure for supporting a terminal contact system of the package component. The package component also includes an encapsulant on the base die encapsulating the interconnect contacts, an underfill layer between the dice, and terminal contacts configured for flip chip mounting the package component to a supporting substrate. A method for fabricating the package component includes the steps of providing a base wafer containing a plurality of base dice, and flip chip mounting the secondary dice to the base dice on the base wafer.

Abstract: A multi stack packaging chip and a method of manufacturing the chip are provided. The method includes forming at least one second circuit element on a first wafer; forming a second wafer having a cavity and a one third circuit element formed opposite to the cavity; forming a solder on the second wafer; and combining the second wafer with the first wafer so that the second circuit element and the cavity correspond. The chip includes a flip-chip packaged chip in which a first circuit element is packaged using a first wafer; a second circuit element formed on the first wafer; a second wafer having a cavity and combined with the first wafer so that the cavity and the second circuit element correspond; a third circuit element formed on the second wafer; and a solder formed on the second wafer, the solder electrically coupling the second wafer to a packaging substrate.