Abstract: A sensor comprises two photodiodes sensitive to different wavelengths. The photodiodes or detectors are stacked in a vertical relationship to each other. A bandpass filter is provided to limit the wavelengths of light reaching the detectors. The photodiodes are formed of various combinations of materials such as AlGaN or InGaN, or different compositions of the same material. Charge detectors are coupled to each detector to provide a signal representative of the amount of radiation detected in their corresponding bandwidths. A biological sample is provided proximate the filter. A laser is used to illuminate the biological sample to create biofluorescence corresponding to intrinsic tryptophan of bacteria.

Abstract: A semiconductor multi-package module has stacked lower and upper packages, each of which includes a die attached to a substrate, in which the second package is inverted, in which the upper and lower substrates are interconnected by wire bonding, and in which the inverted second package comprises a wire bond carrier package. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a die, affixing an upper wire bond carrier package including an upper substrate in inverted orientation onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: An integrated circuit packaging system with ultra-thin die is provided including providing an ultra-thin integrated circuit stack, having a vertical sidewall contact, including providing a semiconductor wafer having an active side, forming a solder bump on the active side of the semiconductor wafer, forming a support layer over the solder bump and the active side of the semiconductor wafer, forming an ultra-thin wafer from the semiconductor wafer and singulating the ultra-thin integrated circuit stack for exposing the vertical sidewall contact, mounting the ultra-thin integrated circuit stack on a substrate, and coupling the substrate to the vertical sidewall contact.

Abstract: A method of manufacturing an integrated circuit including a first isolated chip electrically and mechanically connected via wafer bonding to a second isolated chip, wherein the active faces of the chips face one another, includes: forming metallic contact zones on active faces of first and second wafers, positioning and fixing the wafers one above another at a predetermined distance such that the active faces of the wafers face one another and the contact zones are aligned, placing the fixed wafers in a bath for electroless metal deposition onto the contact zones; and removing the fixed wafers in the event that the metal layers growing on the aligned contact zones of the first and second wafers have grown together.

Abstract: A method of forming a multi-layer semiconductor structure includes attaching a handle-member to a top surface of a first structure using a first interface. At least one region of a bottom surface of the first structure is etched to form at least a first via-hole for exposing a portion of a first conductive member defined on the first structure. A conductive material is disposed in the first via-hole such that a first end of the conductive material is in electrical communication with the first conductive member and a second end of the conductive material is exposed at the bottom surface of the first structure. A second interface is disposed over at least the second end of the conductive material, which serves as a bonding and/or electrical interface between the first conductive member defined on the first structure and a second structure of the multi-layer semiconductor device structure.

Abstract: Systems and methods for packaging integrated circuit chips in castellation wafer level packaging are provided. The active circuit areas of the chips are coupled to castellation blocks and, depending on the embodiment, input/output pads. The castellation blocks and input/output pads are encapsulated and held in place by an encapsulant. When the devices are being fabricated, the castellation blocks and input/output pads are sawed through. If necessary, the wafer portion on which the devices are fabricated may be thinned. The packages may be used as a leadless chip carrier package or may be stacked on top of one another. When stacked, the respective contacts of the packages are preferably coupled. Data may be written to, and received from, packaged chips when a chip is activated. Chips may be activated by applying the appropriate signal or signals to the appropriate contact or contacts.

Abstract: Some embodiments of the invention provide a programmable system in package (“PSiP”). The PSiP includes a single IC housing, a substrate and several IC's that are arranged within the single IC housing. At least one of the IC's is a configurable IC. In some embodiments, the configurable IC is a reconfigurable IC that can reconfigure more than once during run time. In some of these embodiments, the reconfigurable IC can be reconfigured at a first clock rate that is faster (i.e., larger) than the clock rates of one or more of the other IC's in the PSiP. The first clock rate is faster than the clock rate of all of the other IC's in the PSiP in some embodiments.

Abstract: An integrated circuit package system including a leadframe having an aperture provided therein and an integrated circuit package mounted to the leadframe over or under the aperture. A die is mounted within the aperture to the integrated circuit package and the die includes a plurality of the die.

Abstract: A stacked integrated circuit package-in-package system is provided forming a first integrated circuit spacer package including a mold compound with a recess provided therein, stacking the first integrated circuit spacer package on an integrated circuit die on a substrate with the recess positioned therebetween, and attaching a first electrical interconnect extending from the recess and connected between the integrated circuit die and the substrate.

Abstract: The invention proposes an interposer assembly architecture for noise suppression circuits on the package of a CPU or high power, high frequency VLSI device. In this architecture, charge is stored on dedicated capacitors at a voltage substantially higher than the operating voltage of the VLSI device. These capacitors are mounted upon active circuits that are packaged to match the size and form factor of the capacitors and this assembly is then attached to the package substrate. Charge is conveyed from the capacitor terminals on the backside of the packaged active circuits chip. Depending upon the capacitor construction, these terminals may either be double-sided contact terminals along the edge of the active device's package, or may be feed-through contacts.

Abstract: A semiconductor system (300) has one or more packaged active subsystems (310, 330); each subsystem has a substrate with electrical contact pads and one or more semiconductor chips stacked on top of each other, assembled on the substrate. The system further has a packaged passive subsystem (320) including a substrate with electrical contacts and passive electrical components, such as resistors, capacitors, and indictors. The passive subsystem is stacked with the active subsystems and connected to them by solder bodies.

Abstract: An integrated circuit package-in-package system is provided forming a first integrated circuit package having a first interface, stacking a second integrated circuit package having a second interface above the first integrated circuit package, fitting the first interface and the second interface, and attaching a third integrated circuit package on the second integrated circuit package.

Abstract: A semiconductor device module includes a wiring substrate, a plurality of stacked semiconductor devices and a damping impedance circuit. The plurality of stacked semiconductor devices are provided on the wiring substrate and connected with a signal in a stubless manner, and each of the plurality of stacked semiconductor devices comprises a plurality of semiconductor chips which are stacked. The damping impedance circuit is provided for a transmission path of the signal for an uppermost semiconductor chip as the furthest one, from the wiring substrate, of the plurality of semiconductor chips of a first stacked semiconductor device as one of the plurality of stacked semiconductor devices which is first supplied with the signal.

Abstract: A stacked die package system including forming a bottom package including a bottom substrate and a bottom die mounted and electrically connected under the bottom substrate and forming a top package including a top substrate and a top die mounted and electrically connected over the top substrate. Mounting the top package by the top substrate over the bottom substrate and electrically connecting the bottom and top substrates. Mounting system electrical connectors under the bottom substrate adjacent the bottom die.

Abstract: A plurality of wafers are aligned and stacked on a thermally variable rotary table, the table and stack are rotated, and an underfill material is disposed and cured between wafers in the stack, bonding the wafers. Corresponding wafer portions of the plurality of wafers in the stack may be singulated from the stack, and may comprise semiconductor device packages either individually or when coupled with a substrate.

Abstract: An electronic dive and method of fabricating an electronic device. The method including placing a placement guide over a top surface of a module substrate, the placement guide having a guide opening, the guide opening extending from a top surface of the placement guide to a bottom surface of the placement guide; aligning the placement guide to an integrated circuit chip position on the module substrate; fixing the placement guide to the module substrate; placing an integrated circuit chip in the guide opening, sidewalls of the placement guide opening constraining electrically conductive bonding structures on bottom surface of the integrated circuit chip to self-align to an electrically conductive module substrate contact pad on the top surface of the module substrate in the integrated circuit chip position; and bonding the bonding structures to the module substrate contact pads, the bonding structures and the module substrate contact pads in direct physical and electrical contact after the bonding.

Abstract: To manufacture a wafer level stack package, first and second wafers having first and second via patterns are prepared. The second wafer is attached to the first wafer such that the front sides of the first and second wafers face each other and the first and second via patterns are connected to each other. The back side of the second wafer is ground and etched such that the lower ends of the second via patterns are exposed and projected. The back side of the first wafer is ground and etched such that the lower ends of the first via patterns are exposed and projected. A chip level stack structure is formed by sawing a wafer level stack structure having the stacked wafers into a chip level. The chip level stack structure is attached to a substrate having electrode terminals.

Abstract: A stackable packaged chip includes a substrate with a conductive wiring formed therein or thereon. The substrate further includes a plurality of substrate contact pads arranged around a periphery portion of the substrate. A chip mounted on the substrate including contact pads that are electrically connected with the conductive wiring of the substrate, and a ring surrounding edges of the chip are also included. The ring is formed from an electrically insulating material and includes a plurality of openings, each opening adjacent a substrate contact pad to allow for electrical connection to the chip though the substrate contact pad.

Abstract: The invention relates to an integrated circuit, electronic device, and method for assembling an integrated circuit package with at least one bottom module with a stacked die package comprising at least two dies within one single mold cap. To allow chip area reduction, the invention provides at least one memory module stacked on top of the bottom module using a ball grid array.

Abstract: A stacked chip semiconductor device including: a substrate having electrode pads; a first semiconductor chip that is flip-chip-packaged on the substrate via a first adhesive layer; a second semiconductor chip that is mounted on an upper part of the first semiconductor chip and that has electrode pads; wires for electrically connecting the electrode pads of the second semiconductor chip and the electrode pads of the substrate; and a molded resin for encapsulating the first semiconductor chip, the second semiconductor chip and the wires, the first adhesive layer forming a fillet at the periphery of the first semiconductor chip. The first semiconductor chip is disposed with its central axis being offset from a central axis of the substrate, the offset being provided so that the first semiconductor chip is shifted toward a side opposite to a side where the fillet has a maximum length from the periphery of the first semiconductor chip.

Abstract: A plurality of interconnect layers are produced on a top side of one or two semiconductor chips, and are mutually isolated from one another in each case by insulation layers that are patterned in such a way that an interconnect layer applied as bridge makes contact with the interconnects applied previously.

Abstract: A semiconductor multi-package module has stacked lower and upper packages, each of which includes a die attached to a substrate, in which the second package is inverted, in which the upper and lower substrates are interconnected by wire bonding, and in which the inverted second package comprises a bump chip carrier package. Also, a method for making a semiconductor multi-package module, by providing a lower molded package including a lower substrate and a die, affixing an upper bump chip carrier package including an upper substrate in inverted orientation onto the upper surface of the lower package, and forming z-interconnects between the upper and lower substrates.

Abstract: A method and apparatus for forming a multiple semiconductor die assembly (200, 300, 400) having a thin profile are presented. The semiconductor die assembly (200, 300, 400) comprises a plurality of die packages (100), with each die package (100) including a lead frame (10) having a plurality of leads (11) each having a down set portion (101) extending from (14). A semiconductor die (30) is disposed in a central region (12) of the lead frame (10) and is electrically connected (11). An encapsulant (50) is disposed in the central region (12) and covers to the semiconductor die (30) and a portion (11). The first surface (14) of the leads (11) and a first surface (34) of the semiconductor die (30) are substanial exposed from the encapsulant (50). The first surface (34) of the semiconductor die (30) and the down set portions (101) form a cavity (102).

Abstract: A microelectronic assembly includes two or more microelectronic packages stacked at a fine pitch, which is finer than the pitch that is possible when using solder balls for making the joint. Each stackable package desirably includes a substrate having pins projecting from one surface of the substrate and solder balls projecting from the other surface of the substrate. Each stackable package may have one or more die attached to one or more of the surfaces of the substrate. In certain embodiments, die may be attached to both surfaces of the substrate. The dies may be electrically interconnected with the substrate using wire bonds, flip chip bonding, leads and/or stud bumping. The die may be encapsulated in an encapsulated material, under-filled or glob topped. In certain preferred embodiments, the combination of the conductive post height and ball height is equal to or greater than the height of the encapsulated or molded chip structure.

Abstract: A method of making a microelectronic assembly includes providing a microelectronic package having a substrate, a microelectronic element overlying the substrate and at least two conductive elements projecting from a surface of the substrate, the at least two conductive elements having surfaces remote from the surface of the substrate. The method includes compressing the at least two conductive elements so that the remote surfaces thereof lie in a common plane, and after the compressing step, providing an encapsulant material around the at least two conductive elements for supporting the microelectronic package and so that the remote surfaces of the at least two conductive elements remain accessible at an exterior surface of the encapsulant material.

Abstract: Methods and arrangements to attach a QFN to a PCB, systems which include a QFN attached to a PCB, and apparatuses for controlling the deposit of solder upon a PCB are disclosed. Embodiments include transformations, code, state machines or other logic to calculate a total area for the QFN IO pads. Embodiments may then determine a total area for the regions of solder applied to the PCB thermal pad to which the QFN thermal pad may be connected in dependence upon the calculated total area for the QFN IO pads. In some embodiments, the total area of the solder regions applied to the PCB thermal pad is approximately equal to the calculated total area for the QFN IO pads. In many embodiments, the number of regions of solder and the shape of the regions of solder is determined.

Abstract: Techniques are shown in which substrates having a first layer of a first material and second layer of a second material, wherein the second material is less noble than the first material, is provided by bonding the first and second layers together with an amorphous layer interposed there between. The amorphous material may be deposited on a bonding face of the first layer, second layer, or both, before the operation of bonding the first and second layers. The layer with less noble material may be a supporting layer and the other layer may be an active layer for forming components in optics, electronics, or opto-electronics. The amorphous layer may be polished before the bonding operation.

Abstract: A stacked semiconductor module is made by stacking a second semiconductor device having a second semiconductor chip mounted to the top surface of a second semiconductor substrate above the top surface of a first semiconductor device having a first semiconductor chip mounted to a first semiconductor substrate. The top surface of the first semiconductor substrate is provided with a first connection terminal and the bottom surface of the first semiconductor substrate is provided with an external connection terminal. A region of the bottom surface of the second semiconductor substrate lying opposite to the second semiconductor chip is provided with a second connection terminal. A conductive connecting member connects the first connection terminal to the second connection terminal.

Abstract: A lower module of a stacked semiconductor device includes a first substrate and a first semiconductor chip held above the first substrate. The top surface of the first substrate is provided with a plurality of first chip connection terminals electrically connected to the first chip terminals, respectively, and a plurality of upper module connection terminals electrically connectable to an upper module provided with a second semiconductor chip. The back surface of the first substrate is provided with a plurality of external substrate connection terminals. Each of the first chip connection terminals is electrically connected to a corresponding one of the external substrate connection terminals, and each of the upper module connection terminals is electrically connected between a corresponding one of the chip connection terminals and a corresponding one of the external substrate connection terminals.

Abstract: A memory card structure comprising a substrate, a plurality of memory chips, some package material and an ultra-thin plastic shell is provided. To fabricate the memory card, a substrate having a first surface and a second surface is provided. The first surface has a plurality of outer contacts and the second surface has at least a cavity. There is a plurality of inner contacts around the cavity. Furthermore, the outer contacts and the inner contacts are electrically connected to each other. The memory chips are stacked up inside the cavity and electrically connected to the inner contacts of the substrate. Then, the memory chips and the inner contacts are encapsulated using the molding compound. Thereafter, the ultra-thin plastic shell is placed over the second surface and attached to the substrate. That portion of the ultra-thin plastic shell covering the memory chips has a thickness of about 0.1˜0.15 mm.

Abstract: A manufacturing method for a semiconductor device includes: the step of preparing a semiconductor chip which is provided with a functional element formed on a front surface side of a semiconductor substrate, a feedthrough electrode which is placed within a through hole that penetrates the semiconductor substrate, a front surface side connection member which protrudes from the front surface, and a rear surface side connection member which has a joining surface within a recess that is formed in a rear surface; the step of preparing a solid state device where a solid state device side connection member for connection to the front surface side connection member is formed on one surface; and the joining step of making the front surface of the semiconductor chip face the first surface of the solid state device by holding the rear surface of the semiconductor chip, and of joining the front surface side connection member to the solid state device side connection member.

Abstract: Two or more semiconductor packages are stacked with an intervening element that is positioned between within an area surrounded by conductive bumps of a bottom surface of the overlying package. Different shapes of the intervening element are used depending upon how many sides of the bottom surface have conductive bumps. In one form the intervening element extends laterally from the stack and is bent downward to contact or extend through an underlying substrate. Contact to the intervening element at the backside of the substrate may be made. In another form the intervening element is bent upward for enhancing thermal properties. The intervening element is adhesive to prevent non-destructive removal of the packages thereby adding increased security for information contained within the packages. Selective electrical shielding between packages is also provided.

Abstract: Methods and apparatuses to provide a stacked-die device comprised of stacked sub-packages. For one embodiment of the invention, each sub-package has interconnections formed on the die-side of the substrate for interconnecting to another sub-package. The dies and associated wires are protected by an encapsulant leaving an upper portion of each interconnection exposed. For one embodiment of the invention the encapsulant is a stencil-printable encapsulant and the upper portion of the interconnection is exposed by use of a patterned stencil during application of the encapsulant.

Abstract: A chip structure including a chip, a first passivation layer, a redistribution layer and a second passivation layer is provided. The chip has a wire bonding area adjacent to one side or two sides adjacent to each other of the chip, wherein the chip has multiple first bonding pads disposed inside the wire bonding area and multiple second pads disposed outside the wire bonding area. The first passivation layer disposed on the chip has multiple first openings by which the first and the second bonding pads are exposed. The redistribution layer is disposed on the first passivation layer and extended from the second bonding pads to the wire bonding area. The redistribution layer has multiple third bonding pads located inside the wire bonding area. The second passivation layer disposed over the redistribution layer has multiple second openings by which the first and the third bonding pads are exposed.

Abstract: A method of vertically stacking wafers is provided to form three-dimensional (3D) wafer stack. Such method comprising: selectively depositing a plurality of metallic lines on opposing surfaces of adjacent wafers; bonding the adjacent wafers, via the metallic lines, to establish electrical connections between active devices on vertically stacked wafers; and forming one or more vias to establish electrical connections between the active devices on the vertically stacked wafers and an external interconnect. Metal bonding areas on opposing surfaces of the adjacent wafers can be increased by using one or more dummy vias, tapered vias, or incorporating an existing copper (Cu) dual damascene process.

Abstract: Semiconductor devices and stacked die assemblies, and methods of fabricating the devices and assemblies for increasing semiconductor device density are provided.

Abstract: Embodiments of a method and apparatus for bonding wafers are disclosed. The bonded wafers may include self-passivating interconnects. Other embodiments are described and claimed.

Abstract: A semiconductor stacking structure has a semiconductor device. A flexible substrate is coupled to a bottom surface of the semiconductor device. The flexible substrate is folded over on at least two sides to form flap portions. The flap portions are coupled to an upper surface of the first semiconductor device and covers only a portion of the upper surface of the semiconductor device.

Abstract: The present invention is aimed at bonding a lower chip and an upper chip through bumps in a highly reliable manner, while ensuring a sufficient area for an external connection terminal region, by offsetting the upper chip to the lower chip. The substrate 2 has bumps 1 arranged on one surface thereof, and has a first chip 3 mounted on the other surface thereof. A second chip 4 is bonded to the first chip 3 through bumps 5, 6 while offsetting the second chip 4 to the first chip 3 in parallel. In the bonded state of the first chip 3 and the second chip 4, a part of the first chip 3 and a part of the second chip 4 are overlapped without aligning the centers of the both. The center of gravity of the second chip 4 falls inside a region surrounded by the outermost bumps between the first chip 3 and the second chip 4.

Abstract: The chip package includes a first and second semiconductor chip. The first semiconductor chip has a first connection structure that electrically connects to a bond pad on a first surface of the first semiconductor chip. The second semiconductor chip has a second connection structure. The second connection structure is electrically connected to a bond pad on a first surface of the second semiconductor chip and extends through the second semiconductor chip to a second surface of the second semiconductor chip. A portion of the second connection structure extending to the second surface of the second semiconductor chip is electrically connected to the first connection structure and formed of a harder material than the first connection structure.

Abstract: An integrated circuit package may include a substrate and an integrated circuit. The substrate may include at least one region, and a first magnetic material associated with the at least one region. The integrated circuit may have a second magnetic material associated therewith. The second magnetic material may be attracted to the first magnetic material to coupled the integrated circuit to the at least one region of the substrate. The IC package may be utilized in an RFID tag of an RFID system. An associated method for assembling an integrated circuit to a substrate is also provided.

Abstract: Process for the formation of a spatial chip arrangement having several chips (32, 36, 37, 38, 39) arranged in several planes and electrically connected to one another, in which the chips are connected via their peripheral connection surfaces (33) to assigned conducting paths (23) of a conducting-path structure (24, 25) arranged on at least one carrier substrate (21, 22) by the chips being arranged transverse to the longitudinal extent of the carrier substrate.

Abstract: A chip stack comprising a flex circuit including a flex substrate having a first conductive pattern disposed thereon and a plurality of leads extending therefrom. Also included in the chip stack are at least two integrated circuit chip packages. The integrated circuit chip packages may be electrically connected to the first conductive pattern of the flex circuit such that the integrated circuit chip packages are positioned upon respective ones of opposed top and bottom surfaces of the flex substrate. Alternatively, one of the integrated circuit chip packages may be positioned upon the top surface of the flex substrate and electrically connected to the first conductive pattern, with the remaining integrated circuit chip package being attached in a non-conductive manner to the bottom surface of the flex substrate such that the conductive contacts of such integrated circuit chip package and the leads collectively define a composite footprint for the chip stack.

Abstract: A variety of techniques and structures are described that integrate an insulated pedestal into the back surface of integrated circuit dice. The die has an insulated integral pedestal formed therein that acts as a spacer. The pedestal has a footprint that is smaller than the total footprint of the die so that a portion of the active region of the die overhangs the pedestal. The geometry of the pedestal may be widely varied and in some embodiments, multiple pedestals may be provided on the stacked die. In another aspect, the pedestals are formed at the wafer level such that the pedestals are defined in the back surface of the wafer. Often, the thickness of the pedestals will be thicker than the portions of the wafer outside the pedestal areas. The described dice are particularly well suited for use in stacked die packages.

Abstract: A semiconductor module is formed by alternately stacking resin boards 3 on which semiconductor chips 2 are mounted and sheet members having openings larger than the semiconductor chips 2 and bonded to the resin boards 3. The resin board 4 located at the bottom out of the resin boards 3 is thicker than the other resin boards 3.