Abstract: A semiconductor structure includes an active region including a source region, a drain region, and a channel region extending between the source region and the drain region, a gate stack, and a gate dielectric layer located between the gate stack and the active region. The gate stack includes an electrically conductive gate electrode and a single crystalline III-nitride ferroelectric plate located between the electrically conductive gate electrode and the gate dielectric layer, and an entirety of the single crystalline III-nitride ferroelectric plate is single crystalline.

Abstract: An embodiment of the present disclosure provides a MIM capacitor by High-k dielectric and method for fabricating the same to prevent formation of oxygen-based interface films between a lower electrode and a dielectric layer, and between an upper electrode and a dielectric layer by stacking a first film formed of metal between the dielectric layer formed of a High-k material having a high dielectric constant and the lower electrode formed of metal, and a second film formed of metal between the dielectric layer and the upper electrode.

Abstract: A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

Abstract: A semiconductor component comprising a semiconductor body, a channel zone in the semiconductor body, a channel control electrode adjacent to the channel zone, and a dielectric layer between the channel zone and the channel control electrode, wherein the dielectric layer has a relative dielectric constant ?r with a negative temperature coefficient.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

Abstract: It is an object of the present invention to obtain a transistor with a high ON current including a silicide layer without increasing the number of steps. A semiconductor device comprising the transistor includes a first region in which a thickness is increased from an edge on a channel formation region side and a second region in which a thickness is more uniform than that of the first region. The first and second region are separated by a line which is perpendicular to a horizontal line and passes through a point where a line, which passes through the edge of the silicide layer and forms an angle ? (0°<?<45°) with the horizontal line, intersects with an interface between the silicide layer and an impurity region, and the thickness of the second region to a thickness of a silicon film is 0.6 or more.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has an easy cone magnetic anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, an upper-layer wire provided on the substrate, a lower-layer wire provided on the substrate, a memory cell located at an intersection of the upper-layer wire and the lower-layer wire and includes a diode and a storage layer, a conductive layer located between the upper-layer wire and the memory cell in a direction perpendicular to the substrate surface, and an interlayer insulating film provided between memory cells. The position of an interface between the upper-layer wire and the interlayer insulating film is lower than a top surface of the conductive layer.

Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO (001) substrate 11 is prepared. An epitaxial Fe(001) lower electrode (a first electrode) 17 with the thickness of 50 nm is grown on a MgO(001) seed layer 15 at room temperature, followed by annealing under ultrahigh vacuum (2×10?8 Pa) and at 350° C. A MgO(001) barrier layer 21 with the thickness of 2 nm is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) with the thickness of 10 nm is then formed on the MgO(001) barrier layer 21 at room temperature. This is successively followed by the deposition of a Co layer 21 with the thickness of 10 nm on the Fe(001) upper electrode (the second electrode) 23.

Abstract: A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the free layer. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer, whose magnetization direction is fixed, is disposed over the lower electrode. The tunneling insulating film is disposed over the fixed layer. The free layer, whose magnetization direction is variable, is disposed over a main surface of the tunneling insulating film. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer.

Abstract: A ferroelectric device employs ferroelectric electrodes as local interconnect(s). One or more circuit features are formed within or on a semiconductor body. A first dielectric layer is formed over the semiconductor body. Lower contacts are formed within the first dielectric layer. A bottom electrode is formed over the first dielectric layer and on the lower contacts. A ferroelectric layer is formed on the bottom electrode. A top electrode is formed on the ferroelectric layer. A second dielectric layer is formed over the first dielectric layer. Upper contacts are formed within the second dielectric layer and in contact with the top electrode. Conductive features are formed on the upper contacts.

Abstract: A memory device is disclosed. In a first aspect the memory comprises a first doped awell; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovsite material on top of the first doped well and located between two bitlines; and a wordline located above the Perovskite material. In a second aspect the memory comprises a first doped well; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovskite material located within one of the bitlines and a wordline located above the first doped well and located between the two bitlines.

Abstract: A memory device is disclosed. In a first aspect the memory comprises a first doped awell; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovsite material on top of the first doped well and located between two bitlines; and a wordline located above the Perovskite material. In a second aspect the memory comprises a first doped well; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovskite material located within one of the bitlines and a wordline located above the first doped well and located between the two bitlines.

Abstract: A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided.

Abstract: A capacitor device includes a dielectric layer configured to have a composition represented as (Ba1?x, Srx)Ti1?zScyO3+? (0<x<1, 0.01<z<0.3, 0.005<y<0.02, ?0.5<?<0.5) and an in-plane deformation ? of crystal that satisfies ?0.4<?<0.4, an upper electrode and a lower electrode that are placed on respective sides of the dielectric layer, and a substrate on which the upper electrode, the lower electrode, and the dielectric layer are disposed.

Abstract: A nonvolatile ferroelectric memory device includes a plurality of unit cell arrays, wherein each of the plurality of unit cell arrays includes: a bottom word line; a plurality of insulating layers formed on the bottom word line, respectively; a floating channel layer comprising a plurality of channel regions located on the plurality of insulating layers and a plurality of drain and source regions which are alternately electrically connected in series to the plurality of channel regions; a plurality of ferroelectric layers formed respectively on the plurality of channel regions of the floating channel layer; and a plurality of word lines formed on the plurality of ferroelectric layers, respectively. The unit cell array reads and writes a plurality of data by inducing different channel resistance to the plurality of channel regions depending on polarity states of the plurality of ferroelectric layers.

Abstract: Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.

Abstract: A semiconductor device includes a substrate and a doped hafnium oxide layer disposed on the substrate, the doped hafnium oxide layer including a hafnium oxide layer doped with doping atoms and having tetragonal unit lattices, an ion size of the doping atom being greater than an ion size of a hafnium atom.

Abstract: As an example of a nitride semiconductor light emitting device, on a sapphire substrate, a GaN buffer layer, an n-type GaN contact layer, an MQW active layer, and a p-type GaN contact layer are sequentially stacked, and a partial region from the p-type GaN contact layer to the middle of the n-type GaN contact layer is mesa-etched so as to form an n electrode. Meanwhile, a p electrode is provided on the p-type GaN contact layer, and, in addition to the p electrode, multiple ridge parts are formed by crystal growth so as to be scattered. By providing the multiple ridge parts, device characteristics can be improved without causing damage on the GaN-based semiconductor layer.

Abstract: Semiconductor device comprising at least: one substrate, a transistor comprising at least one source region, one drain region, one channel and one gate, a planar layer based on at least one piezoelectric material, resting at least on the gate and capable of inducing at least mechanical strain on the transistor channel, in a direction that is substantially perpendicular to the plane of a face of the piezoelectric layer situated on the gate side, the piezoelectric layer being arranged between two biasing electrodes, one of the two biasing electrodes being formed by a first layer based on at least one electrically conductive material such that the piezoelectric layer is arranged between this first conductive layer and the gate of the transistor.

Abstract: A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. Also disclosed is a method which includes forming on a substrate an electrode having wells and precursor features formed in the wells of the electrode, the precursor features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. The above first embodiment relates to non-embedded type media, and the above second embodiment relates to embedded type media.

Abstract: A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2 or may have a perovskite crystal structure excluding Pb.

Abstract: A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

Abstract: The present invention is to provide a semiconductor memory device capable of providing excellent storage properties, scaling and high integration and a method of fabricating the same. A semiconductor memory device has a multiferroic film exhibiting ferroelectricity and ferromagnetism, a channel region on an interface of a semiconductor substrate below the multiferroic film, source and drain regions formed on both sides of the channel region, a gate electrode (data write electrode) applying gate voltage to the multiferroic film to write data in such a way that the orientation of magnetization is changed as corresponding to the orientation of dielectric polarization, and source and drain electrodes (data read electrodes) that read data based on a deviation in a flow of the carrier, the deviation caused by applying the Lorentz force to the carrier flowing in the channel region from a magnetic field occurring in the channel region because of magnetization.

Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared by the following steps. A single-crystalline MgO (001) substrate 11 is prepared. An epitaxial Fe(001) lower electrode (a first electrode) 17 with the thickness of 50 nm is grown on a MgO(001) seed layer 15 at room temperature, followed by annealing under ultrahigh vacuum (2×10?8 Pa) and at 350° C. A MgO(001) barrier layer 21 with the thickness of 2 nm is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) with the thickness of 10 nm is then formed on the MgO(001) barrier layer 21 at room temperature. This is successively followed by the deposition of a Co layer 21 with the thickness of 10 nm on the Fe(001) upper electrode (the second electrode) 23.

Abstract: A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided.

Abstract: In one embodiment, the invention is a method and apparatus for flatband voltage tuning of high-k field effect transistors. One embodiment of a field effect transistor includes a substrate, a high-k dielectric layer deposited on the substrate, a gate electrode deposited on the high-k dielectric layer, and a dipole layer positioned between the substrate and the gate electrode, for shifting the threshold voltage of the field effect transistor.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a first ferroelectric film over a lower electrode, crystallizing the first ferroelectric film, forming a second ferroelectric film in an amorphous state over the first ferroelectric film so as to fill voids existing on a surface of the first ferroelectric film, and forming an upper electrode over the second ferroelectric film of the amorphous state, wherein the crystallizing step of the first ferroelectric film is conducted by a thermal annealing process at a temperature of 585° C. or higher.

Abstract: A blocking dielectric engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking dielectric including a buffer layer in contact with the charge trapping element, such as silicon dioxide which can be made with high-quality, and a second capping layer in contact with said one of the gate and the channel. The capping layer has a dielectric constant that is higher than that of the first layer, and preferably includes a high-? material. The second layer also has a conduction band offset that is relatively high. A bandgap engineered tunneling layer between the channel and the charge trapping element is provided which, in combination with the multilayer blocking dielectric described herein, provides for high-speed erase operations by hole tunneling. In an alternative, a single layer tunneling layer is used.

Abstract: A ferroelectric memory device is equipped with a ferroelectric capacitor having a first electrode, a second electrode, and a ferroelectric layer between the first and second electrodes, and the ferroelectric memory device includes: a wiring that is connected to one of the first electrode and the second electrode, wherein the wiring includes a first wiring layer composed of titanium nitride oriented along a <111> direction, and a second wiring layer formed on the first wiring and composed of titanium aluminum nitride orientated along a <111> direction.

Abstract: A nonvolatile magnetic memory device including a magnetoresistance device having a recording layer formed of a ferromagnetic material for storing information by use of variation in resistance depending on the magnetization inversion state. The plan-view shape of the recording layer includes a pseudo-rhombic shape having four sides, at least two of the four sides each include a smooth curve having a central portion curved toward the center of the pseudo-rhombic shape. The easy axis of magnetization of the recording layer is substantially parallel to the longer axis of the pseudo-rhombic shape. The hard axis of magnetization of the recording layer is substantially parallel to the shorter axis of the pseudo-rhombic shape. The sides constituting the plan-view shape of the recording layer are smoothly connected to each other.

Abstract: A semiconductor device fabrication method that improves the efficiency of semiconductor device production. A plurality of wafer substrates are set and a process for fabricating semiconductor devices each having a ferroelectric capacitor is begun. After ferroelectric layers are formed over the plurality of wafer substrates, the ferroelectric layers formed are damaged. The plurality of wafer substrates are then rearranged and treatment is performed. In each step in which the ferroelectric layers formed may be damaged, the plurality of wafer substrates are rearranged and treatment is performed. As a result, retention characteristic variations among wafer substrates in the same lot are reduced and the productivity of semiconductor devices is improved.

Abstract: A magnetic switching element includes a ferromagnetic layer which is substantially pinned in magnetization in one direction; and a magnetic semiconductor layer provided within a range where a magnetic field from the ferromagnetic layer reaches, where the magnetic semiconductor layer changes its state from a paramagnetic state to a ferromagnetic state by applying a voltage thereto, and a magnetization corresponding to the magnetization of the ferromagnetic layer is induced in the magnetic semiconductor layer by applying a voltage to the magnetic semiconductor layer.

Abstract: Ferroelectric structures and methods of making the structures are presented. The ferroelectric structures can include an electrode in contact with a ferroelectric thin film. The contact can be arranged so that a portion of the atoms of the ferroelectric thin film are in contact with at least a portion of the atoms of the electrode. The electrode can be made of metal, a metal alloy, or a semiconducting material. A second electrode can be used and placed in contact with the ferroelectric thin film. Methods of making and using the ferroelectric structures are also presented.

Abstract: A magnetic memory device and a manufacturing method thereof are provided. The magnetic memory device can include a word line, a freely switchable layer, a fixed layer, a dielectric layer, and a bit line. The freely switchable layer can be electrically connected to a diffusion region at one side of the word line, and the fixed layer can be horizontally adjacent to the freely switchable layer. The dielectric layer can be provided between the freely switchable layer and the fixed layer, and the bit line can be electrically connected to the fixed layer.

Abstract: An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

Abstract: An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.

Abstract: A nonvolatile ferroelectric memory device using a silicon substrate includes an insulating layer formed in an etching region of the silicon substrate, a floating channel layer formed over the bottom word line, an impurity layer formed at both ends of the floating channel layer and including a source region formed over the insulating layer and a drain region formed over the silicon substrate, a ferroelectric layer formed over the floating channel layer, and a word line formed over the ferroelectric layer.

Abstract: Apparatus and methods of forming the apparatus include a dielectric layer containing barium strontium titanium oxide layer, an erbium-doped barium strontium titanium oxide layer, or a combination thereof. Embodiments of methods of fabricating such dielectric layers provide dielectric layers for use in a variety of devices. Embodiments include forming barium strontium titanium oxide film using atomic layer deposition. Embodiments include forming erbium-doped barium strontium titanium oxide film using atomic layer deposition.

Abstract: Ferroelectric memory using multiferroics is described. The multiferrroic memory includes a substrate having a source region, a drain region and a channel region separating the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A data storage cell having a composite multiferroic layer is adjacent to the electrically insulating layer. The electrically insulating layer separated the data storage cell form the channel region. A control gate electrode is adjacent to the data storage cell. The data storage cell separates at least a portion of the control gate electrode from the electrically insulating layer.

Abstract: An interlayer insulating film (14) covering a ferroelectric capacitor is formed and a contact hole (19) reaching a top electrode (11a) is formed in the interlayer insulating film (14). An Al wiring (17) connected to the top electrode (11a) via the contact hole (19) is formed on the interlayer insulating film (14). A planar shape of the contact hole (19) is an ellipse.

Abstract: A ferroelectric memory device comprising a dielectric layer comprising a mixture and/or a compound that comprises a ferroelectric organic polymer and an oxidiser and/or deioniser, and a pair of electrodes configured to apply an electric field to the dielectric layer. Also a method of fabricating a memory device.

Abstract: Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.

Abstract: A semiconductor device has a substrate, an insulator, an yttrium oxide film, a ferroelectric film (STN film), and an upper electrode.

Abstract: A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower electrode made of a first metal film formed on the wall and bottom of the first opening and electrically connected to the upper end of the first plug, a capacitive dielectric film made of a ferroelectric film formed on the lower electrode, and an upper electrode made of a second metal film formed on the capacitive dielectric film. The second conductive layer and the upper electrode are electrically connected to each other in the first and second insulating films.

Abstract: A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.

Abstract: A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer.