Li-compensated Pin Gamma-ray Detector (epo) Patents (Class 257/E31.088)
  • Patent number: 8592881
    Abstract: An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode.
    Type: Grant
    Filed: April 7, 2008
    Date of Patent: November 26, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-gyu Lee, Byoung-deog Choi, Hye-hyang Park, Ki-ju Im
  • Patent number: 7732886
    Abstract: A PIN photodiode structure includes a substrate, a P-doped region disposed in the substrate, an N-doped region disposed in the substrate, and a first semiconductor material disposed in the substrate and between the P-doped region and the N-doped region.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: June 8, 2010
    Assignee: United Microelectronics Corp.
    Inventors: Hung-Lin Shih, Tsan-Chi Chu, Wen-Shiang Liao, Wen-Ching Tsai