Abstract: A plasmonic detector is described which can resonantly enhance the performance of infrared detectors. More specifically, the disclosure is directed to enhancing the quantum efficiency of semiconductor infrared detectors by increasing coupling to the incident radiation field as a result of resonant coupling to surface plasma waves supported by the metal/semiconductor interface, without impacting the dark current of the device, resulting in an improved detectivity over the surface plasma wave spectral bandwidth.

Abstract: A method for the ultraviolet (UV) treatment of etch stop and hard mask film increases etch selectivity and hermeticity by removing hydrogen, cross-linking, and increasing density. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing an etch stop film or a hard mask film on a substrate and exposing the film to UV radiation and optionally thermal energy. The UV exposure may be direct or through another dielectric layer.

Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semi-conductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.

Abstract: A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

Abstract: There is provided a high-sensitivity organic semiconductor radiation/light sensor and a radiation/light detector which can detect rays in real time. In the high-sensitivity organic semiconductor radiation/light sensor, a signal amplification wire 2 is embedded in an organic semiconductor 1. Carriers created by passage of radiation or light are avalanche-amplified by a high electric field generated near the signal amplification wire 2 by means of applying a high voltage to the signal amplification wire 2, thus dramatically improving detection efficiency of rays. Hence, even rays exhibiting low energy loss capability can be detected in real time with high sensitivity.

Abstract: A thermal image sensor including a chalcogenide material, and a method of fabricating the thermal image sensor are provided. The thermal image sensor includes a first metal layer formed on a substrate; a cavity exiting the first metal layer adapted for absorbing infrared rays; a bolometer resistor formed on the cavity and including a chalcogenide material; and a second metal layer formed on the bolometer resistor. The thermal image sensor includes a first metal layer formed on a substrate; an insulating layer formed on the first metal layer; a bolometer resistor formed on the insulating layer, including a chalcogenide material and having a thickness corresponding to ¼ of an infrared wavelength (?); the thermal image sensor further includes a second metal layer formed on the bolometer resistor.

Abstract: An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar transparent layer is formed over the color filters and microlenses are formed on the planar transparent layer over the color filters.

Abstract: In a solid-state imaging device, the pixel circuit formed on the first surface side of the semiconductor substrate is shared by a plurality of light reception regions. The second surface side of the semiconductor substrate is made the light incident side of the light reception regions. The second surface side regions of the light reception regions formed in the second surface side part of the semiconductor substrate are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part of the semiconductor substrate are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

Abstract: An imaging device may be formed in a semiconductor substrate including a matrix array of photosites extending in a first direction and a second direction. The imaging device may include a transfer module configured to transfer charge in the first direction and an extraction module configured to extract charge in the second direction.

Abstract: Provided herein are PIN structures including a layer of amorphous n-type silicon, a layer of intrinsic GaAs disposed over the layer of amorphous n-type silicon, and a layer of amorphous p-type silicon disposed over the layer of intrinsic GaAs. The layer of intrinsic GaAs may be engineered by the disclosed methods to exhibit a variety of structural properties that enhance light absorption and charge carrier mobility, including oriented polycrystalline intrinsic GaAs, embedded particles of intrinsic GaAs, and textured surfaces. Also provided are devices incorporating the PIN structures, including photovoltaic devices.

Abstract: A broadband radiation detector includes a first layer having a first type of electrical conductivity type. A second layer has a second type of electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region. A third layer has the second type of electrical conductivity type and an energy bandgap responsive to radiation in a second spectral region comprising longer wavelengths than the wavelengths of the first spectral region. The broadband radiation detector further includes a plurality of internal regions. Each internal region may be disposed at least partially within the third layer and each internal region may include a refractive index that is different from a refractive index of the third layer. The plurality of internal regions may be arranged according to a regularly repeating pattern.

Abstract: Protection for infrared sensing device, and more particularly, to a monolithically integrated uncooled infrared sensing device using IC foundry compatible processes. The proposed infrared sensing device is fabricated on a completed IC substrate. In an embodiment, the infrared sensing device has a single crystal silicon plate with an absorbing layer supported a pair of springs. The absorbing layer absorbs infrared radiation and heats up the underlying silicon layer. As a result, an n well in the silicon layer changes its resistance related to its temperature coefficient of resistance (TCR). In another embodiment, the infrared sensing device has a top sensing plate supported by an underlying spring structures. The top sensing plate has sensing materials such as amorphous silicon, poly silicon, SiC, SiGe, Vanadium oxide, or YbaCuO. Finally, a micro lens array is placed on top of the sensing pixel array with a gap in between.

Abstract: A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio are provided. The solid-state imaging device comprises an integrated array of a plurality of pixels, each of which comprises a photodiode PD for receiving light and generating photoelectric charges, a transfer transistor Tr1 for transferring the photoelectric charges, and a storage capacitor element C connected to the photodiode PD at least through the transfer transistor Tr1 for accumulating, at least through the transfer transistor Tr1, the photoelectric charge overflowing from the photodiode PD during accumulating operation.

Abstract: A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity.

Abstract: A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Abstract: A photodiode array PDA1 is provided with a substrate S wherein a plurality of photodetecting channels CH have an n-type semiconductor layer 32. The photodiode array PDA1 is provided with a p? type semiconductor layer 33 formed on the n-type semiconductor layer 32, resistors 24 provided for the respective photodetecting channels CH and each having one end portion connected to a signal conducting wire 23, and an n-type separating portion 40 formed between the plurality of photodetecting channels CR The p? type semiconductor layer 33 forms pn junctions at an interface to the n-type semiconductor layer 32 and has a plurality of multiplication regions AM for avalanche multiplication of carriers generated with incidence of detection target light, corresponding to the respective photodetecting channels. An irregular asperity 10 is formed in a surface of the n-type semiconductor layer 32 and the surface is optically exposed.

Abstract: A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.

Abstract: A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.

Abstract: The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.

Abstract: In one embodiment, a detector includes an AlzIn(1-x)Sb passivation/etch stop layer, an AlxIn(1-x)Sb absorber layer disposed above the Alzn(1-x)Sb passivation/etch stop layer, and an AlIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<z and x<y. The detector further includes a junction formed in a region of the AlxIn(1?x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.

Abstract: A solid-state image pickup device includes a solid-state image sensor chip having a solid-state image sensor having a photosensitive element formed on a main surface of a semiconductor substrate and chip electrodes led to the back surface of the semiconductor substrate, a passive chip bonded on the back surface of the solid-state image sensor chips having passive parts mounted in its thickness and electrically connected to the chip electrodes of the solid-state image sensors. The device further includes a lens holder fixed to enclose the photosensitive element of the solid-state image pickup sensor chip and a lens barrel to fit into the lens holders, wherein the passive chip is formed having a size equal to or smaller than a size of the solid-state image sensors.

Abstract: In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<y. The detector further includes a junction formed in a region of the AlxIn(1-x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.

Abstract: A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.

Abstract: A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.

Abstract: A broadband radiation detector includes a first layer having a first type of electrical conductivity type. A second layer has a second type of electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region. A third layer has the second type of electrical conductivity type and an energy bandgap responsive to radiation in a second spectral region comprising longer wavelengths than the wavelengths of the first spectral region. The broadband radiation detector further includes a plurality of internal regions. Each internal region may be disposed at least partially within the third layer and each internal region may include a refractive index that is different from a refractive index of the third layer. The plurality of internal regions may be arranged according to a regularly repeating pattern.

Abstract: A bolometer has a semiconductor membrane having a single-crystalline portion, and spacers so as to keep the semiconductor membrane at a predetermined distance from an underlying substrate. The complementarily doped regions of the single-crystalline portion form a diode and the predetermined distance corresponds to a fourth of an infrared wavelength.

Abstract: A photoconductor device and a method of manufacturing the same are provided. The photoconductor device includes a photoconductor substrate, a photoconductor thin film deposited on the photoconductor substrate, and a photoconductive antenna electrode formed on the photoconductor thin film. The photoconductor thin film includes polycrystalline GaAs.

Abstract: A method for fabricating a solar battery module includes cell preparing step for preparing a solar battery cell having an electrode wiring, wiring substrate preparing step for preparing a base material and a wiring substrate having a wiring pattern provided above the base material, mounting step for electrically connecting the wiring pattern with the electrode wiring and mounting the solar battery cell on the wiring substrate, and exposing step for removing the base material to expose the wiring pattern.

Abstract: There is provided a photoconductive element capable of generating and detecting broadband electromagnetic waves such as terahertz waves at a comparatively high efficiency by decreasing or avoiding the absorption of electromagnetic waves into a substrate. A photoconductive element 1 includes a photoconductive film 5 exhibiting conductivity by the radiation of light, a substrate 6 holding the photoconductive film and a thin film sandwiched between the photoconductive film 5 and the substrate 6, the thin film being different in composition from the photoconductive film 5 and the substrate 6. The photoconductive film 5 is provided with an antenna 7 having a gap portion 2 and an electrode 4 electrically connectable to the antenna 7. At least a part of the photoconductive film where the gap portion 2 of the antenna 7 is located is single crystal. The substrate 6 has an opening portion 3 at a part corresponding to a part of the photoconductive film 5 where the gap portion 2 of the antenna 7 is located.

Abstract: An integrated infrared (IR) and full color complementary metal oxide semiconductor (CMOS) imager array is provided. The array is built upon a lightly doped p doped silicon (Si) substrate. Each pixel cell includes at least one visible light detection pixel and an IR pixel. Each visible light pixel includes a moderately p doped bowl with a bottom p doped layer and p doped sidewalls. An n doped layer is enclosed by the p doped bowl, and a moderately p doped surface region overlies the n doped layer. A transfer transistor has a gate electrode overlying the p doped sidewalls, a source formed from the n doped layer, and an n+ doped drain connected to a floating diffusion region. The IR pixel is the same, except that there is no bottom p doped layer. An optical wavelength filter overlies the visible light and IR pixels.

Abstract: A novel pixel circuit and multi-dimensional array for receiving and detecting black body radiation in the SWIR, MWIR or LWIR frequency bands. An electromagnetic thermal sensor and imaging system is provided based on the treatment of thermal radiation as an electromagnetic wave. The thermal sensor and imager functions essentially as an electromagnetic power sensor/receiver, operating in the SWIR (200-375 THz), MWIR (60-100 THz), or LWIR (21-38 THz) frequency bands. The thermal pixel circuit of the invention is used to construct thermal imaging arrays, such as 1D, 2D and stereoscopic arrays. Various pixel circuit embodiments are provided including balanced and unbalanced, biased and unbiased and current and voltage sensing topologies. The pixel circuit and corresponding imaging arrays are constructed on a monolithic semiconductor substrate using in a stacked topology. A metal-insulator-metal (MIM) structure provides rectification of the received signal at high terahertz frequencies.

Abstract: Various embodiments of a package-on-package optical sensor comprising three distinct different packages are disclosed. The three different packages are combined to form the optical proximity sensor, where the first package is a light emitter package, the second package is a light detector package, and the third package is an integrated circuit package. First and second infrared light pass components are molded or casted atop the light emitter package and the light detector package after they have been mounted atop the integrated circuit package. An infrared light cut component is then molded or casted between and over portions of the light emitter package and the light detector package.

Abstract: A ceramic body is disposed in a path of light emitted by a light source. The light source may include a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region. The ceramic body includes a plurality of first grains configured to absorb light emitted by the light source and emit light of a different wavelength, and a plurality of second grains. For example, the first grains may be grains of luminescent material and the second grains may be grains of a luminescent material host matrix without activating dopant.

Abstract: A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

Abstract: Provided is an electromagnetic wave reception device capable of being downsized and directly and simply (at least at a room temperature) detecting electromagnetic waves in a wider bandwidth including the terahertz range. The electromagnetic wave reception device that obtains charges according to an electric field of the electromagnetic waves incident on a semiconductor substrate includes: a high charge-density region provided on the semiconductor substrate and having a first charge density; a conductive region covering the high charge-density region via an insulation region; and a low charge-density region provided adjacent to the high charge-density region on the semiconductor substrate and having a second charge density lower than the first charge density, wherein the low charge-density region is connected to a charge detecting circuit that is not illustrated.

Abstract: An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal.

Abstract: A semiconductor sensing device in which a sensing layer is exposed to a medium being tested in an area below and/or adjacent to a contact. In one embodiment, the device comprises a field effect transistor in which the sensing layer is disposed below a gate contact. The sensing layer is exposed to the medium by one or more perforations that are included in the gate contact and/or one or more layers disposed above the sensing layer. The sensing layer can comprise a dielectric layer, a semiconductor layer, or the like.

Abstract: Back contact solar cells including rear surface structures and methods for making same. The rear surface has small contact areas through at least one dielectric layer, including but not limited to a passivation layer, a nitride layer, a diffusion barrier, and/or a metallization barrier. The dielectric layer is preferably screen printed. Large grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.

Abstract: A photodiode may include a first region comprising substantially intrinsic semiconductor material, the region having a first side and a second side opposite to the first side. The photodiode may also include a second region comprising highly-doped p-type semiconductor material formed proximate to the first side of the first region. The photodiode may additionally include a third region comprising highly-doped n-type semiconductor material formed proximate to the second side of the first region. The photodiode may further include a fourth region comprising one of: (i) highly-doped p-type semiconductor formed between the first region and the third region, or (ii) highly-doped n-type semiconductor formed between the first region and the second region.

Abstract: Back-illuminated image sensors include one or more contact implant regions disposed adjacent to a backside of a sensor layer. An electrically conductive material, including, but not limited to, a conductive lightshield, is disposed over the backside of the sensor layer. A backside well is formed in the sensor layer adjacent to the backside, and an insulating layer is disposed over the surface of the backside. Contacts formed in the insulating layer electrically connect the electrically conducting material to respective contact implant regions. At least a portion of the contact implant regions are arranged in a shape that corresponds to one or more pixel edges.

Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of the first conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the first conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of a second conductivity type is disposed in the sensor layer adjacent to the frontside of the sensor layer. A distinct plurality of backside photodetectors of the second conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to the backside region. One or more or more channel regions of the second conductivity type are disposed in respective portions of the sensor layer between the frontside photodetector and the backside photodetector in each photodetector pair.

Abstract: In one aspect, the present invention provides photodetectors and components thereof having multi-spectral sensing capabilities. In some embodiments, photodetectors of the present invention provide a first photosensitive element comprising at least one accessway extending through the element and an electrical connection at least partially disposed in the accessway, the electrical connection accessible for receiving a second photosensitive element.

Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.

Abstract: Apparatus including flexible line extending along a length. Flexible line includes first charge carrier-transporting body, photosensitive body over first charge carrier-transporting body, and second charge carrier-transporting body over photosensitive body. Each of first and second charge carrier-transporting bodies and photosensitive body extend along at least part of length of flexible line. Photosensitive body is capable of near-infrared or visible light-induced generation of charge carrier pairs. Second charge carrier-transporting body is at least semi-transparent to near-infrared light or visible light.

Abstract: In a solid-state imaging device, the pixel circuit formed on the first surface side of the semiconductor substrate is shared by a plurality of light reception regions. The second surface side of the semiconductor substrate is made the light incident side of the light reception regions. The second surface side regions of the light reception regions formed in the second surface side part of the semiconductor substrate are arranged at approximately even intervals and the first surface side regions of the light reception regions formed in the first surface side part of the semiconductor substrate are arranged at uneven intervals, respectively, and the second surface side regions and the first surface side regions are joined respectively in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

Abstract: A field effect transistor includes a first semiconductor layer made of a multilayer of a plurality of semiconductor films and a second semiconductor layer formed on the first semiconductor layer. A source electrode and a drain electrode are formed on the second semiconductor layer to be spaced from each other. An opening having an insulating film on its inner wall is formed in a portion of the second semiconductor layer sandwiched between the source electrode and the drain electrode so as to expose the first semiconductor layer therein. A gate electrode is formed in the opening to be in contact with the insulating film and the first semiconductor layer on the bottom of the opening.

Abstract: A photoconductive device (2) comprises a plurality of photoconductive layers (6, 8, 10, 12), each photoconductive layer comprising photoconductive material (4) and a respective plurality of electrodes (16, 18), wherein the photoconductive layers (6, 8, 10, 12) are electrically connected together.

Abstract: Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer (1) and a pair of metal electrodes (2) which are arranged on the surface of the semiconductor layer (1) at an interval (d) and form an MSM junction. The interval (d) satisfies the relationship of ?>d>?/100, where ? is the wavelength of incident light. The metal electrodes (2) can induce surface plasmon. At least one of the electrodes forms a Schottky junction with the semiconductor layer (1), and a low end portion is embedded in the semiconductor layer (1) to a position at a depth less than ?/2n, where n is the refractive index of the semiconductor layer (1).

Abstract: Disclosed is a multi-channel array radiation detector that can provide high-definition and high-resolution CT photo-images. The radiation detector has semiconductor photo-detecting elements arranged lengthwise and breadth-wise in a lattice manner and scintillator elements arranged on them one-to-one. The scintillator elements have thin metal light-reflecting material layers formed on side surfaces of the scintillator elements, and a radiation shielding material layer composed of resin blended with heavy metal element particles is filled in between adjacent metal light-reflecting material layers.