Abstract: Disclosed are embodiments of a multi-chip assembly including optically coupled die. The multi-chip assembly may include two opposing substrates, and a number of die are mounted on each of the substrates. At least one die on one of the substrates is in optical communication with at least one opposing die on the other substrate. Other embodiments are described and claimed.

Abstract: The present invention is a hybrid integrated circuit comprising at least two semiconductor dies. A high performance semiconductor die includes high performance epitaxy layers grown on a donor substrate, which may form active devices such as transistors. A supporting semiconductor die includes epitaxy layers of a commercially available technology and grown on a native substrate to form passive devices such as resistors, capacitors, inductors, backside via holes, or active devices such as transistors The semiconductor dies are attached to a metallic mounting structure and may be electrically interconnected using traditional IC interconnect methods, such as wire bonding. The metallic mounting structure may function as a grounding base, which may be formed of electrically conductive metal such as copper. The high performance epitaxy layers may include GaN epitaxy layers, AlGaN epitaxy layers, SiC epitaxy layers, or a combination of the three.

Abstract: A semiconductor device which has a high performance integrated circuit formed of an inexpensive glass substrate and capable of processing a large amount of information and operating at higher data rates. The semiconductor device includes semiconductor elements stacked by transferring a semiconductor element formed on a different substrate. A resin film is formed between the stacked semiconductor elements and a metal oxide film is partially formed between the stacked semiconductor elements as well. A first electric signal is converted to an optical signal in a light emitting element electrically connected to one of the stacked semiconductor elements. Meanwhile, the optical signal is converted to a second electric signal in a light receiving element electrically connected to another one of the stacked semiconductor elements.

Abstract: A system and a method are described for forming features at the bottom of a cavity in a substrate. Embodiments of the systems and methods provide an infrared transmitting, hermetic lid for a microdevice. The lid may be manufactured by first forming small, subwavelength features on a surface of an infrared transmitting substrate, and coating the subwavelength features with an etch stop material. A spacer wafer is then bonded to the infrared transmitting substrate, and a device cavity is etched into the spacer wafer down to the etch stop material, exposing the subwavelength features. The etch stop material may then be removed, and the microdevice enclosed in the device cavity, by bonding the device wafer to the lid.

Abstract: Disclosed is an image inputting apparatus including: a base; a sensor main body coupled with the base so as to be able to move in a vertical direction on the base; a switch provided on either one of an upper surface side of the base or a lower surface side of the sensor main body; and a convex part provided on another one of the upper surface side of the base or the lower surface side of the sensor main body at a position facing to the switch.

Abstract: A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode electrode, a carbon layer on the cathode electrode, and a gate electrode, disposing an anode electrode, and applying to the carbon layer a voltage higher than that at a driving of the electron-emitting device.

Abstract: In an embodiment of an optical coupling type semiconductor device according to the present invention, in an optical coupling type semiconductor device that is provided with lead frames on which a light emitting element and a light receiving element have been respectively separately mounted and a resin sealing member that seals the light emitting element and the light receiving element, a plurality of protrusion portions are formed on the lead frames.

Abstract: A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).

Abstract: An electroluminescent device (13), such as a light emitting diode, which has a light-reflecting surface (10) causing undesirable reflection of ambient light incident on the device is provided with a combination of a reflective circular polarizer (17) and an absorbing circular polarizer (23) to suppress the undesirable reflection of ambient light thus improving the contrast of the device when used under high intensity ambient lighting conditions while maintaining a satisfactory brightness. The reflection band of the reflective circular polarizer regions (17?) of the reflective circular polarizer (17) are preferably tuned to the corresponding emission band of the luminescent regions (9?) of the electroluminescent device to further increase the contrast of the device while substantially maintaining the same brightness.

Abstract: An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

Abstract: A display includes a display surface, an electroluminescent panel, which has a plurality of electroluminescent elements, and a liquid crystal panel, which has a plurality of liquid crystal elements. The liquid crystal panel and the electroluminescent panel overlaps each other in the front and rear direction of the display. The electroluminescent elements and the liquid crystal elements are aligned with each other in the front and rear direction of the display. In the display, at least one of the electroluminescent elements and the liquid crystal elements function as pixels to show an image on the display surface. Therefore, the display can show an image in the appropriate manner in accordance with an environment.