Light Source Being Semiconductor Device With Potential Or Surface Barrier (e.g., Light-emitting Diode) (epo) Patents (Class 257/E31.099)
  • Patent number: 8901575
    Abstract: The present invention relates to an AC light emitting diode. An object of the present invention is to provide an AC light emitting diode wherein various designs for enhancement of the intensity of light, prevention of flickering of light or the like become possible, while coming out of a unified method of always using only one metal wire with respect to one electrode when electrodes of adjacent light emitting cells are connected through metal wires. To this end, the present invention provides an AC light emitting diode comprising a substrate; bonding pads positioned on the substrate; a plurality of light emitting cells arranged in a matrix form on the substrate; and a wiring means electrically connecting the bonding pads and the plurality of light emitting cells, wherein the wiring means includes a plurality of metal wires connecting an electrode of one of the light emitting cells with electrodes of other electrodes adjacent to the one of the light emitting cells.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: December 2, 2014
    Assignee: Seoul Viosys Co., Ltd.
    Inventor: Jae Ho Lee
  • Patent number: 8890186
    Abstract: A molded resin product or the like that is provided with a phosphor layer made of gel-like or rubber-like resin that can maintain its shape for a long period and that can be implemented easily. The molded resin product (phosphor layer 7) includes a resin member 17 made of a gel-like or rubber-like translucent resin including a phosphor material. The resin member 17 includes a shape maintaining member 19 that is formed in a lattice shape by line-like members 20 that are made of a material having a higher elasticity modulus than the resin member 17. The molded resin product (phosphor layer 7) is in the shape of a dome. The translucent resin is made of, for example, silicon resin, and the resin member 17 is gel-like.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: November 18, 2014
    Assignee: Panasonic Corporation
    Inventors: Toshifumi Ogata, Nobuyuki Matsui, Masumi Abe
  • Patent number: 8816361
    Abstract: Disclosed is a structure combining a solar cell and a light-emitting element. The structure includes a light-emitting device having a substrate and a light-emitting structure disposed on the first surface of the substrate. The substrate includes a plurality of cones formed on a second surface opposite to the first surface. The structure also includes a first conductive layer, disposed on the second surface, a power convention layer disposed on the first conductive layer, a second conductive layer disposed on the power conversion layer, and a patterned transparent layer disposed on the second conductive layer. The patterned transparent layer includes a surface consisting of a plurality of cones and disposed on a side opposite to the second conductive layer.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: August 26, 2014
    Assignee: Phecda Technology Co. Ltd.
    Inventor: Yong-Fa Huang
  • Patent number: 8729572
    Abstract: A light emitting diode package includes an electrically insulated base, first and second electrodes, an LED chip, a voltage stabilizing module, and an encapsulative layer. The base has a first surface and an opposite second surface. The first and second electrodes are formed on the first surface of the base. The LED chip is electrically connected to the first and second electrodes. The voltage stabilizing module is formed on the first surface of the base, positioned between and electrically connected to the first and second electrodes. The voltage stabilizing module connects to the LED chip in reverse parallel and has a polarity arranged opposite to that of the LED chip. The voltage stabilizing module has an annular shape and encircles the first electrode. The encapsulative layer is formed on the base and covers the LED chip.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: May 20, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Hou-Te Lin, Chao-Hsiung Chang
  • Patent number: 8664639
    Abstract: A display apparatus includes a first substrate including a plurality of pixels, a first electrode arranged on the first substrate, a second substrate facing the first substrate, and a second electrode arranged on the second substrate and spaced apart from the first electrode, the second electrode to form an electric field in cooperation with the first electrode. At least one of the first and second electrodes includes a transparent conductive nanomaterial having a transmittance of no less than 73% to no more than 100% and a sheet resistance of 0 ohms to 100 ohms.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: March 4, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Neerja Saran, Woo-Jae Lee
  • Patent number: 8648360
    Abstract: A light-emitting diode structure includes a base with a recessed portion, a light-emitting chip and a light-transmissive block. The light-emitting chip disposed in the recessed portion of the base and emits a light beam. The light-transmissive block disposed on the base covers the recessed portion and the light-emitting chip, so that the light beam emitted from the light-emitting chip is radiated outwardly via the light-transmissive block. The light-transmissive block is a flat-top multilateral cone including a bottom surface, a top surface, and several side surfaces connected to and located between the bottom surface and the top surface. A slot with a bottom portion is formed on the top surface of the light-transmissive block.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: February 11, 2014
    Assignee: Everlight Electronics Co., Ltd.
    Inventor: Kuan-Yu Chen
  • Patent number: 8629439
    Abstract: A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sections 21, 22 by means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective film 32a containing hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: January 14, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masaaki Hiroki, Masakazu Murakami, Hideaki Kuwabara
  • Patent number: 8598604
    Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.
    Type: Grant
    Filed: September 27, 2006
    Date of Patent: December 3, 2013
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Dominik Eisert, Norbert Linder, Raimund Oberschmid, Dirk Berben, Frank Jermann, Martin Zachau
  • Patent number: 8541797
    Abstract: An illuminator includes a substrate, a structured conductive layer applied to one surface of the substrate, and at least one light source connected to the structured conductive layer. The illuminator further includes an unstructured reflective layer applied on top of the structured conductive layer. The unstructured reflective layer has an essentially continuous extension at least in a surrounding of the at least one light source.
    Type: Grant
    Filed: November 14, 2005
    Date of Patent: September 24, 2013
    Assignee: Koninklijke Philips N.V.
    Inventors: Christoph Gerard August Hoelen, Antonius Constant Johanna Cornelis Van Den Ackerveken, Cornelius Franciscus Jozef Rutjes, Koen Van Os, Marc Andre De Samber, Theodoor Cornelis Treurniet
  • Patent number: 8525191
    Abstract: An optoelectronic device assembly can include: a coated element and an optoelectronic device on the coated element. The coated element can include a thermoplastic substrate and a protective weathering layer. The thermoplastic substrate can include a bisphenol-A polycarbonate homopolymer and a polycarbonate copolymer, and wherein the polycarbonate copolymer is selected from a copolymer of tetrabromobisphenol A carbonate and BPA carbonate; a copolymer of 2-phenyl-3,3-bis(4-hydroxyphenyl)phthalimidine carbonate and BPA carbonate; a copolymer of 4,4?-(1-phenylethylidene) biphenol carbonate and BPA carbonate; a copolymer of 4,4?-(1-methylethylidene) bis[2,6-dimethyl-phenol]carbonate and BPA carbonate; and combinations comprising at least one of the foregoing. The protective weathering layer can include resorcinol polyarylate and polycarbonate.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: September 3, 2013
    Assignee: Sabic Innovative Plastics IP B.V.
    Inventors: Jian Zhou, James Edward Pickett, Shreyas Chakravarti
  • Patent number: 8450771
    Abstract: A semiconductor device comprising a plurality of regions of semiconductor material forming a junction at an interface there-between, the junction including a depletion region having a width which varies spatially in at least one direction along the depletion region. Without limitation, the spatial variation in depletion region width is provided by ionised dopants having a concentration which varies spatially along said at least one direction. Alternatively, or in addition, the spatial variation in depletion region width is achieved by varying the thickness of the region(s) of semiconductor spatially along said at least one direction, for example by creating a plurality of cells within said region(s) devoid of said semiconductor material. A method of fabricating a semiconductor device comprising the step of varying the width of the depletion region spatially there-within in at least one direction along the depletion region.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: May 28, 2013
    Assignees: Qinetiq Limited, The Secretary of State for Business Innovation and Skills in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Nothern Ireland
    Inventors: Timothy Ashley, Geoffrey Richard Nash
  • Patent number: 8395193
    Abstract: A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: March 12, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tetsunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
  • Patent number: 8384098
    Abstract: The present invention relates to an AC light emitting diode. An object of the present invention is to provide an AC light emitting diode wherein various designs for enhancement of the intensity of light, prevention of flickering of light or the like become possible, while coming out of a unified method of always using only one metal wire with respect to one electrode when electrodes of adjacent light emitting cells are connected through metal wires. To this end, the present invention provides an AC light emitting diode comprising a substrate; bonding pads positioned on the substrate; a plurality of light emitting cells arranged in a matrix form on the substrate; and a wiring means electrically connecting the bonding pads and the plurality of light emitting cells, wherein the wiring means includes a plurality of metal wires connecting an electrode of one of the light emitting cells with electrodes of other electrodes adjacent to the one of the light emitting cells.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: February 26, 2013
    Assignee: Seoul Opto Device Co., Ltd.
    Inventor: Jae Ho Lee
  • Patent number: 8324027
    Abstract: It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.
    Type: Grant
    Filed: July 8, 2010
    Date of Patent: December 4, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masayuki Sakakura
  • Patent number: 8310009
    Abstract: A display apparatus includes a first substrate including a plurality of pixels, a first electrode arranged on the first substrate, a second substrate facing the first substrate, and a second electrode arranged on the second substrate and spaced apart from the first electrode, the second electrode to form an electric field in cooperation with the first electrode. At least one of the first and second electrodes includes a transparent conductive nanomaterial having a transmittance of no less than 73% to no more than 100% and a sheet resistance of 0 ohms to 100 ohms.
    Type: Grant
    Filed: October 21, 2009
    Date of Patent: November 13, 2012
    Assignee: Samsung Display Co., Ltd.
    Inventors: Neerja Saran, Woo-Jae Lee
  • Patent number: 8269230
    Abstract: A multilayer-doped OLED structure comprises a substrate, an anode layer, a hole transport layer, a multilayer-doped organic light emitting layer, an electron transport layer, an electron injection layer and a metallic cathode layer. The multilayer-doped organic light emitting layer functions as a lighting source. The multilayer-doped organic light emitting layer is fabricated by a plurality of film deposition and doping processes. Thereby, the multilayer-doped organic light emitting layer has better quantum effect to improve luminous efficiency and illumination of OLED.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: September 18, 2012
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jian-Yang Lin, Pei-Wei Hung
  • Patent number: 8217404
    Abstract: A light-mixing type LED package structure for increasing color render index includes a substrate unit, a light-emitting unit, a frame unit and a package unit. The light-emitting unit has a first light-emitting module for generating a first color temperature and a second light-emitting module for generating a second color temperature. The frame unit has two annular resin frames surroundingly formed on the top surface of the substrate unit by coating. The two annular resin frames respectively surround the first light-emitting module and the second light-emitting module in order to form two resin position limiting spaces above the substrate unit. The package unit has a first translucent package resin body and a second translucent package resin body both disposed on the substrate unit and respective covering the first light-emitting module and the second light-emitting module.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: July 10, 2012
    Assignee: Paragon Semiconductor Lighting Technology Co., Ltd.
    Inventors: Chao-Chin Wu, Chia-Tin Chung
  • Patent number: 8203156
    Abstract: A light-emitting diode structure includes a base with a recessed portion, a light-emitting chip and a light-transmissive block. The light-emitting chip disposed in the recessed portion of the base and emits a light beam. The light-transmissive block disposed on the base covers the recessed portion and the light-emitting chip, so that the light beam emitted from the light-emitting chip is radiated outwardly via the light-transmissive block. The light-transmissive block is a flat-top multilateral cone including a bottom surface, a top surface, and several side surfaces connected to and located between the bottom surface and the top surface. A slot with a bottom portion is formed on the top surface of the light-transmissive block.
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: June 19, 2012
    Assignee: Everlight Electronics Co., Ltd.
    Inventor: Kuan-Yu Chen
  • Patent number: 8198643
    Abstract: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series.
    Type: Grant
    Filed: May 11, 2011
    Date of Patent: June 12, 2012
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Chung-Hoon Lee, Keon-Young Lee, Lacroix Yves
  • Patent number: 8138528
    Abstract: A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: March 20, 2012
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tesunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
  • Patent number: 8101440
    Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: January 24, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8043873
    Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
    Type: Grant
    Filed: March 4, 2009
    Date of Patent: October 25, 2011
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8012856
    Abstract: A method is provided for producing a semiconductor component (1) comprising at least one semiconductor body (2) and one connection carrier region (5). A semiconductor layer sequence (20) with an active region (23) intended for generating radiation is deposited on a substrate (25). The semiconductor layer sequence is arranged on a first auxiliary carrier (3) and the substrate is removed. A plurality of semiconductor bodies are formed from the semiconductor layer sequence. A second auxiliary carrier (4) is arranged on the side of the semiconductor layer sequence remote from the first auxiliary carrier. The first auxiliary carrier is removed. A connection carrier (50) with a plurality of connection carrier regions (5) is provided. The second auxiliary carrier is positioned relative to the connection carrier in such a way that at least one of the semiconductor bodies overlaps an associated connection carrier region when viewed in plan view.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: September 6, 2011
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Norwin von Malm
  • Patent number: 7998761
    Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: August 16, 2011
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Dae Won Kim, Yeo Jin Yoon, Duck Hwan Oh, Jong Hwan Kim
  • Patent number: 7964880
    Abstract: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series.
    Type: Grant
    Filed: November 11, 2010
    Date of Patent: June 21, 2011
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Chung-Hoon Lee, Keon-Young Lee, Lacroix Yves
  • Patent number: 7960198
    Abstract: A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through the first epitaxial layer grown on a heavily doped n-type substrate and a plurality of heavily doped p-type regions formed by plasma etching through the second epitaxial layer grown on the first epitaxial layer. Ohmic contacts are formed on p-type regions and on the backside of the n-type substrate. Schottky contacts are formed on the top surface of the n-type region. At normal operating conditions, the current in the device flows through the Schottky contacts. The device, however, is capable of withstanding extremely high current densities due to conductivity modulation caused by minority carrier injection from p-type regions.
    Type: Grant
    Filed: June 28, 2007
    Date of Patent: June 14, 2011
    Assignee: Semisouth Laboratories
    Inventors: Igor Sankin, Joseph Neil Merrett
  • Patent number: 7888687
    Abstract: An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN-based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.
    Type: Grant
    Filed: September 6, 2006
    Date of Patent: February 15, 2011
    Assignee: Showa Denko K.K.
    Inventor: Hisayuki Miki
  • Publication number: 20110031509
    Abstract: The LED module comprises a flexible wiring substrate and surface mounting type LED packages. The flexible wiring substrate is formed at its surface with power supply terminals which comprises a first electrode pad and a second electrode pad, and is formed with a patterned wiring being electrically connected to the patterned wiring. The surface mounting type LED package comprises an LED chip and a mounting substrate. The mounting substrate is formed at its front surface with a recess, and its rear surface with a first connection electrode and the second connection electrode which are electrically connected to the first electrode pad and the second electrode pad, respectively when the mounting substrate is mounted on the flexible wiring substrate. The LED chip is disposed within the recess so as to receive the electrical current through the outside connection electrode and the power supply terminal.
    Type: Application
    Filed: April 24, 2009
    Publication date: February 10, 2011
    Applicant: Panasonic Electric Works Co., Ltd.
    Inventors: Masao Kirihara, Kanako Hoshino
  • Patent number: 7834364
    Abstract: The present invention relates to an AC light emitting diode. An object of the present invention is to provide an AC light emitting diode wherein various designs for enhancement of the intensity of light, prevention of flickering of light or the like become possible, while coming out of a unified method of always using only one metal wire with respect to one electrode when electrodes of adjacent light emitting cells are connected through metal wires. To this end, the present invention provides an AC light emitting diode comprising a substrate; bonding pads positioned on the substrate; a plurality of light emitting cells arranged in a matrix form on the substrate; and a wiring means electrically connecting the bonding pads and the plurality of light emitting cells, wherein the wiring means includes a plurality of metal wires connecting an electrode of one of the light emitting cells with electrodes of other electrodes adjacent to the one of the light emitting cells.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: November 16, 2010
    Assignee: Seoul Opto Device Co., Ltd.
    Inventor: Jae Ho Lee
  • Patent number: 7829903
    Abstract: A light emitting apparatus includes a semiconductor light emitting element mounted on a circuit board; a lighting circuit part mounted on the circuit board; and a cover which covers the semiconductor light emitting element and the lighting circuit part. The lighting circuit part converts a voltage inputted from a power source into electromagnetic energy and propagates the converted electromagnetic energy to the semiconductor light emitting element as light emitting energy, and the cover transmits light from the semiconductor light emitting element.
    Type: Grant
    Filed: February 27, 2006
    Date of Patent: November 9, 2010
    Assignee: Koito Manufacturing Co., Ltd.
    Inventors: Hitoshi Takeda, Masayasu Ito, Tsukasa Tokida
  • Patent number: 7816692
    Abstract: An Organic Light Emitting Display (OLED) and its fabrication method has a pixel defining layer provided on a first electrode which is formed with a gas vent groove to allow gas to vent when the pixel defining layer is being formed, so that gas is not left in a pixel but vented when a donor film is laminated by a Laser-Induced Thermal Imaging (LITI) method, thereby decreasing edge open failures.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: October 19, 2010
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Tae-Min Kang, Seong-Taek Lee, Myung-Won Song, Mu-Hyun Kim, Byung-Doo Chin, Jae-Ho Lee
  • Patent number: 7807489
    Abstract: A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing (Zn) atoms contained in p-type layers surrounding the active layer. One of protection layers is put between the active layer and the p-type cladding layer, while, the other of protection layers is disposed between the active layer and the p-type burying layer.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: October 5, 2010
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mitsuo Takahashi, Kenji Hiratsuka, Akiko Kumagai
  • Patent number: 7804098
    Abstract: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: September 28, 2010
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Chung-Hoon Lee, Keon-Young Lee, Lacroix Yves
  • Patent number: 7705373
    Abstract: A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: April 27, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tesunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
  • Patent number: 7700960
    Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: April 20, 2010
    Assignee: Seoul Opto Device Co., Ltd.
    Inventors: Dae Won Kim, Yeo Jin Yoon, Duck Hwan Oh, Jong Hwan Kim
  • Patent number: 7659544
    Abstract: A light emitting device includes a first light emitting diode (LED) emitting a first light emission of at least a first wavelength, and a second light emitting diode emitting a second light emission of at least a second wavelength. The second LED is placed in close proximity to the first LED such that after a mixing length from the first and second LEDs, a combination of the first and second lights is perceived as one color in the human vision. In use, the first and second LEDs are alternately driven by a power source in the time domain.
    Type: Grant
    Filed: December 23, 2005
    Date of Patent: February 9, 2010
    Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
    Inventors: Ming Lu, Lap-Wei Leung, Geoffrey Wen Tai Shuy
  • Publication number: 20090261353
    Abstract: The invention relates to methods and devices comprising a nanostructure (2;4,4a) for improving the optical behavior of components and apparatuses and/or improving the behavior of sensors by increasing the active surface area. The nanostructure (2) is produced by means of a special RIE etching process, can be modified regarding the composition of the materials thereof, and can be provided with adequate coatings. The amount of material used for the base layer (3) can be reduced by supplying a buffer layer (406). Many applications are disclosed.
    Type: Application
    Filed: October 10, 2006
    Publication date: October 22, 2009
    Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Daniel Gaebler, Konrad Bach
  • Patent number: 7563666
    Abstract: Semiconductor structures and methods of making a vertical diode structure are provided. The vertical diode structure may have associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer may be formed over the interior surface of the diode opening and contacting the active region. The diode opening may initially be filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that may be heavily doped with a first type dopant and a bottom portion that may be lightly doped with a second type dopant. The top portion may be bounded by the bottom portion so as not to contact the titanium silicide layer. In one embodiment of the vertical diode structure, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.
    Type: Grant
    Filed: October 9, 2007
    Date of Patent: July 21, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Fernando Gonzalez, Tyler A. Lowrey, Trung Tri Doan, Raymond A. Turi, Graham R. Wolstenholme
  • Patent number: 7498187
    Abstract: The present invention relates to a method for improving the performance of P-type ohmic contact of gallium nitride LED wafer. Magneto sputtering is used to spray nickel material in nano particles onto the surface of gallium nitride epitaxial layer. The thickness of nickel is between 1 nm to 100 nm. Following that, at least one layer of high work function metal film is deposited onto the surface of the nickel metal layer, and the ratio of the thickness of the nickel metal layer to that of high work function metal film is 1:0.5˜4. Zinc oxide may replace nickel metal layer and high work function metal film. The object of the present invention is to simultaneously reduce the contact impedance of P-type luminous zone and enhance the traverse of electric current, thereby attaining an eventual equilibrium of contact impedance and luminous efficiency and thus increasing the life span of the wafer.
    Type: Grant
    Filed: June 24, 2006
    Date of Patent: March 3, 2009
    Assignee: Podium Photonics (Guangzhou) Ltd.
    Inventors: Mengyuan Wang, Guocong Chen
  • Patent number: 7485584
    Abstract: A device of forming a film from an organic compound material at low cost is provided, using an organic compound material having high light emission efficiency. An organic compound film is formed on a substrate under an inert gas atmosphere by spraying of a colloid solution in which organic compound aggregates are dispersed (this solution is also referred to as a “sol”). Note that the organic compound may be one in which particles are composed of aggregates of several organic compounds within a liquid, and may be one in which a portion of the organic compound is dissolved within a liquid.
    Type: Grant
    Filed: February 16, 2007
    Date of Patent: February 3, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo
  • Patent number: 7462871
    Abstract: In a side view LED, elongated first and second lead frames each have a finger extending therefrom. The finger of the first lead frame is disposed in parallel with that of the second lead frame. An LED chip and a protective device are mounted on mounting areas of the first and second lead frames, respectively and electrically connected to the first and second lead frames. A package body houses the first and second lead frames to form first and second opened areas. The first opened area is externally opened around the LED chip, the second opened area is externally opened around the protective device, and the partition wall is formed therebetween. First and second encapsulants are provided to the first and second opened areas, respectively to encapsulate the LED chip and protective device, respectively. At least the first encapsulant is transparent.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: December 9, 2008
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyung Taeg Han, Myoung Soo Choi, Seon Goo Lee, Jong Uk Park, Chang Wook Kim
  • Patent number: 7432187
    Abstract: A method for improving current distribution of a transparent electrode includes forming a transparent electrode over a substrate; and forming a first mask. First openings are formed in the first mask. The first mask is also located over the transparent electrode. A dispersion, including conductive precursor components, is formed and deposited over the first mask and through the first openings onto the transparent electrode. Upon removal of the first mask, the conductive precursor components of the dispersion are cured to form first patterned conductive areas having a first thickness on the transparent electrode.
    Type: Grant
    Filed: May 14, 2007
    Date of Patent: October 7, 2008
    Assignee: Eastman Kodak Company
    Inventor: Ronald S. Cok
  • Patent number: 7314672
    Abstract: In a method for fabricating a nitride-based semiconductor laser which forms, by a selective deposition, a current narrowing structure and a structure confining a light in a horizontal direction in parallel to a substrate, when the nitride-based semiconductor is selectively deposited by a metal organic chemical vapor deposition, silicon generated by decomposition of the silicon oxide film used as the mask for the selective deposition is prevented from being deposited on a re-growth boundary. For this purpose, a silicon nitride film is used as the mask for the selective deposition, and when the nitride-based semiconductor is selectively deposited by the metal organic chemical vapor deposition, a V-group material of the nitride-based semiconductor, namely, a nitrogen material, for example, ammonia, is supplied so that the decomposition of the silicon nitride film used as the mask for the selective deposition, is prevented.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: January 1, 2008
    Assignee: NEC Corporation
    Inventor: Akitaka Kimura
  • Patent number: 7279725
    Abstract: A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The diode opening is initially filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that is heavily doped with a first type dopant and a bottom portion that is lightly doped with a second type dopant. The top portion is bounded by the bottom portion so as not to contact the titanium silicide layer. For one embodiment of the vertical diode structure, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.
    Type: Grant
    Filed: August 24, 2005
    Date of Patent: October 9, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Fernando Gonzalez, Tyler A. Lowrey, Trung Tri Doan, Raymond A. Turi, Graham R. Wolstenholme
  • Patent number: 7265374
    Abstract: A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.
    Type: Grant
    Filed: June 10, 2005
    Date of Patent: September 4, 2007
    Assignee: Arima Computer Corporation
    Inventors: Stephen Lee, Yury Georgievich Shreter, Yury Toomasovich Rebane, Ruslan Ivanovich Gorbunov
  • Patent number: 7193248
    Abstract: A liquid crystal display (LCD) device having non-white and white light emitting diodes and a liquid crystal display. A spectrum converting material is positioned between non-white LEDs and the LCD to convert the non-white light from the LEDs toward a white light spectrum. The liquid crystal display may include a plurality of light emitting diodes, a light pipe, and a spectrum converting material. The spectrum converting material may be a phosphorized material located between the plurality of non-white light emitting diodes and the light pipe. A light extracting surface may be located near a first surface of the light pipe, a diffuser located near a second side of the light pipe, where the first and second sides are opposite sides of the light pipe, a reflective polarizer, and an liquid crystal display. The light from the light pipe may passes through the diffuser, the reflective polarizer, before backlighting the liquid crystal display. The non-white LEDs may include blue LED, ultraviolet LEDs, and the like.
    Type: Grant
    Filed: March 23, 2005
    Date of Patent: March 20, 2007
    Assignee: Visteon Global Technologies, Inc.
    Inventors: Paul F. L. Weindorf, Adam Zysnarski
  • Patent number: 7179756
    Abstract: A device of forming a film from an organic compound material at low cost is provided, using an organic compound material having high light emission efficiency. An organic compound film is formed on a substrate under an inert gas atmosphere by spraying of a colloid solution in which organic compound aggregates are dispersed (this solution is also referred to as a “sol”). Note that the organic compound may be one in which particles are composed of aggregates of several organic compounds within a liquid, and may be one in which a portion of the organic compound is dissolved within a liquid.
    Type: Grant
    Filed: May 20, 2002
    Date of Patent: February 20, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo
  • Patent number: 7170103
    Abstract: A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The diode opening is initially filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that is heavily doped with a first type dopant and a bottom portion that is lightly doped with a second type dopant. The top portion is bounded by the bottom portion so as not to contact the titanium silicide layer. For one embodiment of the vertical diode, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.
    Type: Grant
    Filed: August 24, 2005
    Date of Patent: January 30, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Fernando Gonzalez, Tyler A. Lowrey, Trung Tri Doan, Raymond A. Turi, Graham R. Wolstenholme
  • Patent number: 7138660
    Abstract: The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than those of the absorbed lights. The phosphor is made of alkaline earth metal silicate fluorescent material activated with europium.
    Type: Grant
    Filed: March 24, 2005
    Date of Patent: November 21, 2006
    Assignees: Toyoda Gosei Co., Ltd., Tridonic Optoelectronics GmbH, Litec GBR, Leuchstoffwerk Breitungen GmbH
    Inventors: Koichi Ota, Atsuo Hirano, Akihito Ota, Stefan Tasch, Peter Pachler, Gundula Roth, Walter Tews, Wolfgang Kempfert, Detlef Starick
  • Patent number: 6979582
    Abstract: The present invention provides a vertical-cavity surface emitting laser (VCSEL) diode and a method for producing the same. In this method, an n-type and a p-type ohmic contact electrodes are previously disposed, and then two pairs of distributed Bragger reflectors (DBRs) are formed. At last, a permanent metal substrate is plated. According to the present invention, reflectivity of the DBRs can be preserved without damage during rapid thermal annealing, and thus brightness of the laser diode is improved.
    Type: Grant
    Filed: September 22, 2003
    Date of Patent: December 27, 2005
    Assignee: National Chung-Hsing University
    Inventors: Ray-Hua Horng, Dong-Sing Wu