Abstract: A display device comprises a first substrate, a conductive layer including a first electrode on the first substrate, an interlayer insulating layer on the conductive layer, a via layer on the interlayer insulating layer and including a hole exposing a part of a top surface of the interlayer insulating layer, a second electrode spaced apart from the hole and on the via layer, light emitting elements inside the hole of the via layer, a first contact electrode electrically connected to the first electrode and a first end of the light emitting elements, and a second contact electrode on the via layer and electrically connected to a second end of the light emitting elements. At least a part of the light emitting elements are placed on an inner wall of the hole.

Abstract: An image sensor and an electronic device are disclosed. At least one pixel in the image sensor includes a photodiode, a floating diffusion region and a transfer transistor located between the photodiode and the floating diffusion region. The photodiode includes a carrier-accumulation region, and a gate of the transfer transistor extends up to the carrier-accumulation region. The gate extends away from the floating diffusion region and overlaps over half of a width of the carrier-accumulation region. Since carriers move at a higher speed in a fast transfer channel in the semiconductor substrate around such a gate, increasing the length of the transfer transistor's gate extending away from the floating diffusion region and overlapping range with the carrier-accumulation region can facilitate fast movement of carriers from the carrier-accumulation region through such fast transfer channels to the floating diffusion region, thereby improving overall carrier transfer efficiency and optimizing performance thereof.

Abstract: According to one embodiment, a semiconductor device includes first, second, and third molded bodies. The first molded body covers a first light emitting element, a part of a lead electrically connected to the first light emitting element, a first light receiving element configured to detect a light emitted from the first light emitting element, and a part of a lead electrically connected to the first light receiving element with a first resin. The second molded body covers a second light emitting element, a part of a lead electrically connected to the second light emitting element, a second light receiving element configured to detect a light emitted from the second light emitting element, and a part of a lead electrically connected to the second light receiving element with the first resin. The third molded body molds the first and the second molded bodies as one body using a second resin.

Abstract: This disclosure provides systems, methods and apparatus for touch systems. In one aspect, the touch system can include at least one light guide optically coupled to at least one light source and at least one optical detector. The light guide can be configured to transmit light from at least one light source across the surface in at least one direction and to receive at least a portion of the transmitted light reflected in an opposite direction in response to at least one reflecting object on the surface. The touch system also can include a touchscreen transceiver. The touch system can be configured to determine a location of at least one reflecting object on the surface by identifying a position of where the light guide or the touchscreen transceiver receives the reflected light and by determining time-of-flight of the transmitted light and the reflected light.

Abstract: A semiconductor light-receiving includes: a substrate; a semiconductor light-receiving element that is provided on the substrate and has a first conductivity region and a second conductivity region; a first electrode electrically coupled to the first conductivity region; a second electrode electrically coupled to the second conductivity region; an insulating layer located on the second conductivity region; and a wiring that is located on the insulating layer and is electrically coupled to the first electrode, the wiring being elongated from the first electrode to a peripheral region of the semiconductor light-receiving element, the wiring having a region of first width and a region of second width narrower than the first width, the region of second width of the wiring being located on the second conductivity region.

Abstract: The invention relates to an infrared light detector having a sensor chip (4), which comprises a thin-film element (5) made from a pyroelectrically sensitive material, having an electrical insulator (27), at least one electronic component (17, 18) having a thin-film design, which forms part of a readout electronics unit, and a thin-film membrane (2), on which the sensor chip (4) and the electronic component (17, 18) are mounted side by side in an integrated manner such that the electronic component (17, 18) is electrically conductively coupled to the thin-film element (5). A signal amplifier (22), with which, in co-operation with the electronic component (17, 18), an electrical signal emitted from the sensor chip (4) can be amplified, can be connected to the electronic component (17, 18).

Abstract: A semiconductor relay includes two MOSFETs; a light emitting element; a light-receiving drive element for switching on and off the two MOSFETs; two output and two input conductor plates electrically connected to the two MOSFETs and the light emitting element, respectively; and an encapsulating resin encapsulating the two MOSFETs, the light emitting element, the light-receiving drive element, the two output and the two input conductor plates. The two output and two input conductor plates includes terminal portions which protrude outside the encapsulating resin and are mounted on a common printed circuit board. Further, the two output conductor plates includes mount portions on which the two MOSFETs are mounted or on which drain electrodes of the two MOSFETs are connected, and the mount portions are encapsulated by the encapsulating resin in such an orientation that a thickness direction of the mount portions intersects that of the printed circuit board.

Abstract: The present invention discloses a compact sensor package structure, which comprises a package body, an LED chip and a sensor chip. The package body has a first room, a second room, a first hole and a second hole. The first and second rooms are independent to each other. The first and second holes interconnect the interiors and the external environments of the first and second rooms. The LED chip is arranged inside the first room, corresponding to the first hole and below the first hole. The LED chip projects light through the first hole. The sensor chip is arranged inside the second room, corresponding to the second hole and above/below the second hole. The sensor chip receives light via the second hole. The present invention features two independent rooms for two chips and prevents interference between the two chips.

Abstract: The invention relates to the fabrication of thinned substrate image sensors, and notably color image sensors. After the fabrication steps carried out from the front face of a silicon substrate the front face is transferred onto a substrate. The silicon is thinned, and the connection terminals are produced by the rear face. A multiplicity of localized contact holes are opened through the thinning silicon, in the location of a connection terminal. The holes exposing a first conductive layer (24) are formed during the front face steps. Aluminum (42) is deposited on the rear face, in contact with the silicon, with the aluminum penetrating into the openings and coming into contact with the first layer. The aluminum is etched to delimit the connection terminal. Finally, a peripheral trench is opened through the entire thickness of the silicon layer, and this trench completely surrounds the connection terminal.

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

Abstract: According to an embodiment, there is provided a semiconductor device including a semiconductor substrate having a first surface on which an active layer having a light receiving portion is provided and a second surface to be a light receiving surface for the light receiving portion, a wiring layer provided on the active layer, an insulating layer provided to cover the wiring layer, and a supporting substrate joined to the semiconductor substrate via the insulating layer to face the first surface of the semiconductor substrate. A joined body of the semiconductor substrate and the supporting substrate includes an intercalated portion provided between its outer peripheral surface and the active surface. The intercalated portion is provided to penetrate the semiconductor substrate and the insulating layer from the second surface of the semiconductor substrate and to reach inside the supporting substrate.

Abstract: An image reading apparatus includes a light source that irradiates a document with light, the light source including a multilayer substrate and light emitting elements linearly arranged on a first surface of the multilayer substrate; and a light receiver that receives reflected light reflected from the document. The multilayer substrate has at least a pair of through holes each having an inner surface on which a reinforcement member is formed, the at least a pair of through holes being formed so that one of the light emitting elements is interposed therebetween. The reinforcement members contact wiring formed on the first surface of the multilayer substrate and wiring formed on a second surface of the multilayer substrate opposite the first surface.

Abstract: Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.

Abstract: In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.

Abstract: A radiation detecting apparatus includes: a sensor panel that has a substrate, and has a plurality of pixels each of which has a photoelectric conversion element for converting light into an electric signal, arranged on the substrate; and a scintillator layer arranged on a reverse side of the pixels with respect to the substrate, wherein the scintillator layer contains an activator added in a main ingredient, and has a higher concentration of the activator in a peripheral area than in a center area, in a surface direction of the scintillator layer.

Abstract: A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.

Abstract: A reflection-type photointerrupter of the present invention includes a substrate, a light emitting element and a light receiving element. The substrate includes a first surface, a second surface opposite the first surface, and a first and a second recesses that are open in the first surface side. The light emitting element is arranged in the first recess, while the light receiving element is arranged in the second recess. The light emitting element is capable of emitting light. The light receiving element is capable of receiving the light emitted from the light emitting element and reflected by an object to be detected.

Abstract: The invention relates to a method for monitoring the breakdown of a pn junction in a semiconductor component and to a semiconductor component adapted to carrying out said method. According to the method, optical radiation which is emitted if a breakdown occurs on a pn junction is detected by a photosensitive electronic component (8) integrated into the semiconductor component. The supply of the pn junction is controlled according to the detected radiation to prevent a complete breakdown during operation of the semiconductor component. The method according to the invention and the semiconductor component adapted thereto permit the operating range of the semiconductor component to be extended and the power output to be increased without the risk of destruction.

Abstract: A material for forming a conductive structure for a micromechanical current-driven device is described, which is an alloy containing about 0.025% manganese and the remainder nickel. Data shows that the alloy possesses advantageous mechanical and electrical properties. In particular, the sheet resistance of the alloy is actually lower and more stable than the sheet resistance of the pure metal. Accordingly, when used for conductive leads in a photonic device, the leads using the NiMn alloy may provide current to heat the photonic device while generating less heat within the leads themselves, and a more stable output.

Abstract: A disclosed technology is a method for exposing a photo-sensitive SAM film, wherein a self-assembled-monolayer (photo-sensitive SAM film) having photo-sensitivity, exhibiting hydrophobicity before exposure, and exhibiting hydrophilicity after exposure is formed on a substrate, exposure is performed to the substrate in a state in which a surface of the substrate on which the film has been formed is dipped in liquid or in a state in which a light-sensitive surface of the substrate faces downward to be in contact with liquid, exposure light is ultraviolet light, visible light, or light with an exposure-wavelength of 350 nm or more to 800 nm or less, and the liquid is at least one of organic solvent containing an aromatic group and organic solvent of alcohols, ethers, or ketones.

Abstract: A charge-coupled device includes a photosensitive region for collecting charge in response to incident light; a first and third gate electrode made of a transmissive material spanning at least a portion of the photosensitive region; and a second gate electrode made of a transmissive material that is less transmissive than the first and third gates and spans at least a portion of the photosensitive region; wherein the first, second and third gates are arranged symmetrically within an area that spans the photosensitive region.

Abstract: The present invention is directed to organic photosensitive optoelectronic devices and methods of use for determining the position of a light source. Provided is an organic position sensitive detector (OPSD) comprising: a first electrode, which is resistive and may be either an anode or a cathode; a first contact in electrical contact with the first electrode; a second contact in electrical contact with the first electrode; a second electrode disposed near the first electrode; a donor semiconductive organic layer disposed between the first electrode and the second electrode; and an acceptor semiconductive organic layer disposed between the first electrode and the second electrode and adjacent to the donor semiconductive organic layer. A hetero-junction is located between the donor layer and the acceptor layer, and at least one of the donor layer and the acceptor layer is light absorbing.

Abstract: A VCSEL die is packaged so that its optical axis is at a predetermined non-perpendicular and nonparallel angle relative to the plane of a PCB to which the packaged die will be mounted. The die is packaged to form an emitting component which is shaped to orient the VCSEL optical axis at the predetermined angle when the component is placed onto a PCB. The component can be used in combination with a flip-chip sensor IC located on an opposite side of a PCB from the emitting component. The component can also be used in combination with a CSP sensor IC on the same side of a PCB. A VCSEL die and sensor IC can be contained in a single package. The optical axis of the VCSEL die packaged with a sensor IC may or may not be perpendicular to a plane of an array in the sensor IC.

Abstract: An image sensor device and fabrication method thereof wherein a substrate having at least one shallow trench isolation structure therein is provided. At least one photosensor and at least one light emitting element, e.g., such as MOS or LED, are formed in the substrate. The photosensor and the light emitting element are isolated by the shallow trench isolation structure. An opening is formed in the shallow trench isolation structure to expose part of the substrate. An opaque shield is formed in the opening to prevent photons from the light emitting element from striking the photosensor.