Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to disaggregating co-packaged SOC and photonic integrated circuits on an multichip package. The photonic integrated circuits may also be silicon photonics engines. In embodiments, multiple SOCs and photonic integrated circuits may be electrically coupled, respectively, into modules, with multiple modules then incorporated into an MCP using a stacked die structure. Other embodiments may be described and/or claimed.

Abstract: Systems and methods for optical data communication in high temperatures and harsh environments are provided herein. The embodiments utilize a combination of a short wavelength light source combined with a wide bandgap detector in order to transmit optical signals. An optical data communication system may include a light source connected to a light detector via an optical fiber. The light source and the light detector may also be physically adjacent to any dielectric gap that can be spanned without having an optical fiber intermediary.

Abstract: An optocoupler is provided, including at least one light source and at least one matrix of photovoltaic cells facing the at least one light source, the at least one light source being configured to receive, at an input, an input electrical signal, and to generate, at an output, according to the input electrical signal, a light signal, sent to the at least one matrix of photovoltaic cells, the at least one matrix of photovoltaic cells being configured to receive, at the input, at least partially the light signal and to deliver, at the output, at least one output electrical signal, at the level of at least two connection pads, and the at least one light source being a matrix of laser diodes.

Abstract: An optical device includes a substrate, a plurality of light emitting devices, a photo detector and a circuit layer. The substrate has a first surface and a second surface opposite to the first surface. The substrate includes a first region and a second region. The light emitting devices are disposed on the first surface in the first region of the substrate. The photo detector is disposed in the second region of the substrate. The photo detector includes an electrical contact exposed from the second surface of the substrate. The circuit layer is disposed on the second surface of the substrate and electrically connected to the electrical contact of the photo detector.

Abstract: An apparatus comprises an array of vertical-cavity surface-emitting lasers (VCSELs) on a first substrate and an array of detectors on a second substrate, the detectors being configured to detect laser beams emitted by the VCSELs and backscattered by an object, wherein the first substrate is mounted to the second substrate and is configured to allow the laser beams emitted by the VCSELs and backscattered by the object to transmit through the first substrate and reach the detectors.

Abstract: An apparatus comprising a plurality of alignment couplers, wherein the alignment couplers are equally spaced a first length apart from each other along a first surface, a plurality of photodetectors optically coupled to the plurality of alignment couplers, a memory, and a processor coupled to the photodetectors and the memory, wherein the memory comprises computer executable instructions stored in a non-transitory computer readable medium that when executed by the processor cause the processor to receive an electrical signal in response to at least one of the photodetectors detecting a first light, and determine an edge coupling alignment based on the electrical signal, wherein the edge coupling alignment is aligned when the electrical signal indicates two photodetectors of the plurality of photodetectors detect the first light, and wherein the edge coupling alignment is misaligned when the electrical signal indicates only one photodetector of the plurality of photodetectors detects the first light.

Abstract: Improvement of signal integrity, a size reduction of a device, and the like are realized. A semiconductor integrated circuit section 11 and an optical wiring section 21 are electrically connected to each other by a connection section 31 provided between a face of the semiconductor integrated circuit section 11 and a face of the optical wiring section 21 facing each other. An electrical wiring 23 is provided in an optical wiring section 21. The electrical wiring 23 of the optical wiring section 21 functions as a global wiring electrically connecting between a plurality of circuit blocks CB provided in the semiconductor integrated circuit section 11.

Abstract: An optocoupler device facilitates on-chip galvanic isolation. In accordance with various example embodiments, an optocoupler circuit includes a silicon-on-insulator substrate having a silicon layer on a buried insulator layer, a silicon-based light-emitting diode (LED) having a silicon p-n junction in the silicon layer, and a silicon-based photodetector in the silicon layer. The LED and photodetector are respectively connected to galvanically isolated circuits in the silicon layer. A local oxidation of silicon (LOCOS) isolation material and the buried insulator layer galvanically isolate the first circuit from the second circuit to prevent charge carriers from moving between the first and second circuits. The LED and photodetector communicate optically to pass signals between the galvanically isolated circuits.

Abstract: This invention relates to an integrated photodetecting device. The integrated photodetecting device includes a substrate, a light source layer and a photodetector layer. The photodetector layer and light source layer are epitaxied in a stacked structure. The whole device in this invention is fabricated by epitaxy method during a single process. Therefore, the production cost can be reduced by the omission of alignment process. Besides, the integrated photodetecting device of the invention integrates the light source and photodetector into one chip, hence has the ability of minimization, resulting in the reduction of consumption of samples and test time. The distance between the photodetector layer and targets to be tested can also be largely reduced, making the accuracy and sensitivity largely improved, and the kinds of detectable targets largely increased. Furthermore, the integrated photodetecting device of the invention is a portable device so as to increase the possibility of preventive medicine.

Abstract: Provided is a reflection type optical sensor device including: a semiconductor light source being formed by providing a light emitting region on a predetermined region of a substrate; and a photo-detection element being integrated on the same substrate as the substrate where the semiconductor light source is formed to surround an outer circumferential surface of the semiconductor light source, and including a light receiving region. When the light emitted from the semiconductor light source is reflected by an external object, the photo-detection element may detect the light to sense the object. Through this, it is possible to reduce cost and ensure a small size. Also, the photo-detection element is constructed to surround the outer circumferential surface of the semiconductor light source, and thus more accurately detect the light.

Abstract: Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength and includes a pattern that enhances emission of light from a top surface of the LED and suppresses emission of light from one or more sides of the LED. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.

Abstract: Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP.

Abstract: Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength.

Abstract: Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract: To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.

Abstract: An optical semiconductor device includes: a first conductivity type first semiconductor region; a first conductivity type second semiconductor region formed on the first semiconductor region; a second conductivity type third semiconductor region formed on the second semiconductor region; a photodetector section formed of the second semiconductor region and the third semiconductor region; a micro mirror formed of a trench formed selectively in a region of the first semiconductor region and the second semiconductor region except the photodetector section; and a semiconductor laser element held on the bottom face of the trench. A first conductivity type buried layer of which impurity concentration is higher than those of the first semiconductor region and the second semiconductor region is selectively formed between the first semiconductor region and the second semiconductor region in the photodetector section.

Abstract: A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers.

Abstract: In order to diversify a current control method of a semiconductor device, improve performance (including a current drive performance) of the semiconductor device, and reduce a size of the semiconductor device, a second gate may be formed inside a substrate that forms a channel upon applying a bias voltage thereto. In one aspect, the semiconductor device includes: a well region of a first conductivity; source and drain regions of a second conductivity in the well region; a first gate on an oxide layer above the well region, controlling a first channel region of a second conductivity between the source region and the drain region; and a second gate under the first channel region.

Abstract: To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL element, and the sensor pixels each have a diode. The luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes.

Abstract: A semiconductor structure (100) includes a first substrate (110) having a first semiconductor device (112) formed therein, a second substrate (120) having a second device (122) formed therein and vertically-integrated above the first substrate (110), and a thermal isolation gap (130) disposed between the first device (112) and the second device (122). The thermal isolation gap (130) may be formed, for example, using an etched dielectric layer formed on first substrate (110), using an etched cavity in the second substrate (120), or by including a bonding layer (140) that has a gap or void incorporated therein.

Abstract: An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type semiconductor laser, wherein the photodetector element includes a semiconductor layer having a photoabsorption layer, the semiconductor layer having a film thickness d that satisfies a formula (1) as follows: (2m?1)?/4n?3?/16n<d<(2m?1)?/4n+3?/16n . . . , ??(1) where m is an integer, n is a refractive index of the semiconductor layer, and ? is a designed wavelength of the surface-emitting type semiconductor laser.