Shape Of Semiconductor Body (epo) Patents (Class 257/E33.006)
  • Patent number: 11791610
    Abstract: The present invention is characterized by comprising: forming a stacked structure in which a lower cladding layer, an active layer and an upper cladding layer are stacked on an InP substrate in a shape having a mesa stripe structure; forming a first insulation film on the stacked structure by a sputtering method; forming a second insulation film thinner than the first insulation film, on the first insulation film by a plasma CVD method at a film forming temperature higher than that when the first insulation film has been formed; and forming a first electrode on the upper cladding layer, and forming a second electrode on a back surface of the InP substrate.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: October 17, 2023
    Assignee: Mitsubishi Electric Corporation
    Inventor: Hitoshi Sakuma
  • Patent number: 11705536
    Abstract: In an image display element, a side surface of a nitride semiconductor is covered with a reflection material inclined so as to open in a light emitting direction, wavelength conversion units are surrounded by partition walls, and side surfaces of the partition walls facing the wavelength conversion units are reflection surfaces inclined so as to open in the light emitting direction.
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: July 18, 2023
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Katsuji Iguchi
  • Patent number: 9337341
    Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: May 10, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masakazu Murakami, Toru Takayama, Junya Maruyama
  • Patent number: 9299846
    Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: March 29, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masakazu Murakami, Toru Takayama, Junya Maruyama
  • Patent number: 8999105
    Abstract: An etch mask is formed on a substrate. The substrate is positioned in an enclosure configured to shield an interior of the enclosure from electromagnetic fields exterior to the enclosure; and the substrate is etched in the enclosure, including removing a portion of the substrate to form a structure having at least a portion that is isolated and/or suspended over the substrate.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: April 7, 2015
    Assignee: President and Fellows of Harvard College
    Inventors: Marko Loncar, Mikhail D. Lukin, Michael J. Burek, Nathalie de Leon, Brendan Shields
  • Patent number: 8969885
    Abstract: Disclosed herein is a light emitting device module comprising: a heat transfer member having a cavity; first conductive layer and second conductive layer contacting the heat transfer member via an insulating layer, the first conductive layer and the second conductive layer being electrically isolated from each other in accordance with exposure of the insulating layer or exposure of the heat transfer member; and at least one light emitting diode electrically connected to the first conductive layer and second conductive layer, the at least one light emitting device is thermally contacted to an exposed portion of the heat transfer member, wherein the heat transfer member has an exposed portion disposed within the cavity between the first conductive layer and the second conductive layer.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: March 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Gun Kyo Lee, Nam Seok Oh, Young Hun Ryu
  • Patent number: 8952400
    Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: February 10, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Myung Hoon Jung, Hyun chul Lim, Sul Hee Kim, Rak Jun Choi
  • Patent number: 8941125
    Abstract: Broad spectrum light emitting devices and methods and semiconductor chips for fabricating such devices include a light emitting element, such as a diode or laser, which emits light in a predefined range of frequencies. The light emitting element includes a shaped substrate suitable for light extraction through the substrate and a cavity in the substrate proximate the light emitting element. For example, a trench adjacent the light emitting element may be provided. The cavity/trench is configured to contain light conversion material such that light extracted from sidewalls of the cavity/trench passes through the light conversion material contained in the cavity/trench. Methods of fabricating such devices and/or chips are also provided.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: January 27, 2015
    Assignee: Cree, Inc.
    Inventor: Peter S. Andrews
  • Patent number: 8921141
    Abstract: Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: December 30, 2014
    Assignee: Glo AB
    Inventors: Olga Kryliouk, Nathan Gardner, Giuliano Portilho Vescovi
  • Patent number: 8916904
    Abstract: In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: December 23, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hironao Shinohara, Kensuke Hirano
  • Patent number: 8901534
    Abstract: A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: December 2, 2014
    Assignee: GLO AB
    Inventor: Patrik Svensson
  • Patent number: 8890184
    Abstract: A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: November 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joo-sung Kim, Taek Kim, Moon-seung Yang
  • Patent number: 8878231
    Abstract: The present invention provides a light emission device and a manufacturing method thereof. The light emission device includes: i) a substrate; ii) a mask layer disposed on the substrate and having at least one opening; iii) a light emission structure formed on the mask layer surrounding the opening and extended substantially perpendicular to a surface of the substrate; iv) a first electrode formed on the mask layer while surface-contacting the external surface of the light emission structure; and v) a second electrode disposed in the light emission structure and surface-contacting the internal surface of the light emission structure.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: November 4, 2014
    Assignee: SNU R&DB Foundation
    Inventors: Gyu-Chul Yi, Chul-Ho Lee
  • Patent number: 8877652
    Abstract: A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and a plurality of buffer layers formed according to a predetermined pattern and formed spaced apart from each other on the plurality of protrusions.
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: November 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-youn Kim, Su-hee Chae, Hyun-gi Hong, Young-jo Tak
  • Patent number: 8878213
    Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: November 4, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naoharu Sugiyama, Tomonari Shioda, Shigeya Kimura, Koichi Tachibana, Shinya Nunoue
  • Patent number: 8859304
    Abstract: A light-emitting device having a curved light-emitting surface is provided. Further, a highly-reliable light-emitting device is provided. A substrate with plasticity is used. A light-emitting element is formed over the substrate in a flat state. The substrate provided with the light-emitting element is curved and put on a surface of a support having a curved surface. Then, a protective layer for protecting the light-emitting element is formed in the same state. Thus, a light-emitting device having a curved light-emitting surface, such as a lighting device or a display device can be manufactured.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: October 14, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yohei Momma, Tomohiko Suganoya, Saki Obana
  • Patent number: 8835971
    Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: September 16, 2014
    Assignee: Seiko Epson Corporation
    Inventor: Masamitsu Mochizuki
  • Patent number: 8829543
    Abstract: A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: September 9, 2014
    Assignee: Genesis Photonics Inc.
    Inventors: Yun-Li Li, Chih-Ling Wu, Yi-Ru Huang, Yu-Yun Lo
  • Patent number: 8823027
    Abstract: A light emitting device having a relatively simple configuration is provided that emits stable light having a plurality of wavelengths. The light emitting device 1 comprises, in sequence, a composite substrate 3 and a gallium nitride-based semiconductor layer 5 including a light emitting layer 9. The composite substrate 3 includes a base 19 and a gallium nitride layer, the gallium nitride-based semiconductor layer 5 being disposed on a principal surface of the gallium nitride layer, the angle ? defined by the c-axis of the gallium nitride layer and a normal line N1 to the principal surface S1 of the gallium nitride layer ranging from 50 to 130 degrees, the light emitting layer 9 emitting light with an absolute value of the degree of polarization of 0.2 or more, the base 19 containing a fluorescent material that emits a fluorescent light component induced by irradiation of a light component emitted from the light emitting layer 9.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: September 2, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Takashi Kyono
  • Patent number: 8796716
    Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: August 5, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
  • Patent number: 8791469
    Abstract: In a semiconductor light emitting element (1) having a sapphire substrate (100), and lower (210) and upper (220) semiconductor layers laminated on the sapphire substrate, the substrate includes a substrate top surface (113), a substrate bottom surface (114), first substrate side surfaces (111) and second substrate side surfaces (112); plural first (121a) and second (122a) cutouts are provided at a border between the first substrate side surface, the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface (213), first lower semiconductor side surfaces (211) and second lower semiconductor side surfaces (212); plural first projecting portions (211a) and plural first depressing portions (211b) are provided on the first lower semiconductor side surface; and plural second protruding portions (212a) and second flat portions (212b) are provided on the second lower semiconductor side surface.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: July 29, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hironao Shinohara, Kensuke Hirano
  • Patent number: 8785961
    Abstract: Heat spreading substrate. In an embodiment in accordance with the present invention, an apparatus includes a first conductive layer, a first insulating layer disposed in contact with the first conductive layer and a thermally conductive layer disposed in contact with the first insulating layer, opposite the first conductive layer. The faces of the first conductive layer, the first insulating layer and the thermally conductive layer are substantially co-planar; and a sum of widths of faces of the first conductive layer, the first insulating layer and the thermally conductive layer is greater than a height of the faces. The first conductive layer and the first insulating layer may include rolled materials.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: July 22, 2014
    Assignee: Invensas Corporation
    Inventor: Gabriel Z. Guevara
  • Patent number: 8772815
    Abstract: A semiconductor light emitting device has a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a nitride semiconductor layer on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer. An ohmic layer directly contacts the second conductive semiconductor layer and the nitride semiconductor layer.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: July 8, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 8759857
    Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: June 24, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
  • Patent number: 8759812
    Abstract: According to an embodiment, a semiconductor light emitting device is configured to emit light by energy relaxation of an electron between subbands of a plurality of quantum wells. The device includes an active layer and at least a pair of cladding layers. The active layer is provided in a stripe shape extending in a direction parallel to an emission direction of the light, and includes the plurality of quantum wells; and the active layer emits the light with a wavelength of 10 ?m or more. Each of the cladding layers is provided both on and under the active layer respectively and have a lower refractive index than the active layer. At least one portion of the cladding layers contains a material having a different lattice constant from the active layer and has a lower optical absorption at a wavelength of the light than the other portion.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: June 24, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shigeyuki Takagi, Hidehiko Yabuhara
  • Patent number: 8759858
    Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: June 24, 2014
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
  • Patent number: 8754438
    Abstract: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.
    Type: Grant
    Filed: February 19, 2012
    Date of Patent: June 17, 2014
    Assignee: Advanced Optoelectronics Technology, Inc.
    Inventors: Ya-Wen Lin, Shih-Cheng Huang, Po-Min Tu, Chia-Hung Huang, Shun-Kuei Yang
  • Patent number: 8742429
    Abstract: A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, a second electrode formed on the second semiconductor layer, and a first electrode formed under the first semiconductor layer.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: June 3, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jin Sik Choi
  • Patent number: 8742442
    Abstract: A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: June 3, 2014
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Cheng-Hung Wei, Bo-Wen Lin, Ching-Yen Peng, Hao-Chung Kuo, Wen-Ching Hsu
  • Patent number: 8741671
    Abstract: A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: June 3, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: JiHyung Moon, HwanHee Jeong, KwangKi Choi, JuneO Song, SangYoul Lee
  • Patent number: 8729598
    Abstract: The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness.
    Type: Grant
    Filed: February 2, 2011
    Date of Patent: May 20, 2014
    Assignee: Showa Denko K.K.
    Inventors: Wataru Nabekura, Ryouichi Takeuchi
  • Patent number: 8723170
    Abstract: A thin film transistor includes a gate electrode having a first length measured in a first direction and a first width measured in a second direction, an active layer having a second length measured in the first direction and a second width measured in the second direction, the second length of the active layer being greater than the first length of the gate electrode, and the second width of the active layer being greater than the first width of the gate electrode, and a source electrode and a drain electrode that are connected to the active layer, wherein at least one of opposite side edges of the gate electrode extending in the first direction is spaced apart from a corresponding opposite side edge of the active layer extending in the first direction.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: May 13, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ki-Ju Im, Hui-Won Yang, Min-Kyu Kim, Jong-Han Jeong, Kwang-Suk Kim
  • Patent number: 8723194
    Abstract: An array substrate and a pixel unit of a display panel include a plurality of subpixels arranged in a pixel array (N row*M column). Only one data line is disposed in a portion of two adjacent columns of subpixels in the pixel array, and two data lines are disposed in another portion of two adjacent columns of subpixels in the pixel array.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: May 13, 2014
    Assignee: AU Optronics Corp.
    Inventors: Chia-Lun Chiang, Yu-Sheng Huang, Meng-Ju Tsai, Yan-Ciao Chen, Yi-Ching Chen
  • Patent number: 8709845
    Abstract: Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: April 29, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Scott E. Sills, Lifang Xu, Scott D. Schellhammer, Thomas Gehrke, Zaiyuan Ren, Anton J. De Villiers
  • Patent number: 8698173
    Abstract: Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and an epitaxial silicon structure in direct contact with the substrate surface. The epitaxial silicon structure has a sidewall extending away from the substrate surface. The solid state lighting device also includes a semiconductor material on at least a portion of the sidewall of the epitaxial silicon structure. The semiconductor material has a semiconductor surface that is spaced apart from the substrate surface and is located on a semi-polar or non-polar crystal plane of the semiconductor material.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: April 15, 2014
    Assignee: Micron Technology, Inc.
    Inventor: Jaydeb Goswami
  • Patent number: 8698284
    Abstract: A nitride-based semiconductor substrate may includes a plurality of hollow member patterns arranged on a substrate, a nitride-based seed layer formed on the substrate between the plurality of hollow member patterns, and a nitride-based buffer layer on the nitride-based seed layer so as to cover the plurality of hollow member patterns, wherein the plurality of hollow member patterns contact the substrate in a first direction and both ends of each of the plurality of hollow member patterns are open in the first direction.
    Type: Grant
    Filed: April 1, 2011
    Date of Patent: April 15, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang-Moon Lee
  • Patent number: 8686461
    Abstract: A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: April 1, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
  • Patent number: 8679877
    Abstract: Disclosed are a nitride semiconductor light emitting device in which a critical angle is increased by rounding corners of a substrate so as to improve light extraction efficiency due to increase in an amount of light generated from the inside thereof and extracted to the outside, and a method for manufacturing the same. The nitride semiconductor light emitting device includes a buffer layer formed on a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, formed on the buffer layer, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer, wherein the substrate has a light transmitting property, and respective corners of the substrate are rounded so as to have a designated curvature.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: March 25, 2014
    Assignee: LG Display Co., Ltd
    Inventors: Byeong-Kyun Choi, Jae-Heun Lee
  • Patent number: 8673662
    Abstract: A light-emitting diode (LED) cutting method includes the following steps: positioning and retaining an LED die or an LED epitaxial substrate on a die retainer; introducing a liquid medium for preventing reflection of sound wave between a cutting tool and the die; activating a power source to drive a magnetostrictive material or piezoelectric ceramic material mounted on a machine to serve as a kinetic source by inducing volume expansion/compression that generates an up-and-down piston-like movement; and operating the cutting tool having super hard micro-particles of diamond, CBN, or SiC electroformed on the cutting tool to perform breaking cutting on an LED workpiece.
    Type: Grant
    Filed: July 29, 2009
    Date of Patent: March 18, 2014
    Inventor: Tien-Tsai Lin
  • Patent number: 8664028
    Abstract: (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: March 4, 2014
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Yasuyuki Shibata, Ji-Hao Liang
  • Patent number: 8659044
    Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: February 25, 2014
    Assignee: Seiko Epson Corporation
    Inventor: Masamitsu Mochizuki
  • Patent number: 8659039
    Abstract: A highly-efficient semiconductor light emitting diode with improved light extraction efficiency comprising at least a substrate having a plurality of crystal planes, a first conductivity-type barrier layer, an active layer serving as a light emitting layer and a second conductivity-type barrier layer stacked on the substrate. The semiconductor light emitting diode comprises a ridge structure configured from one flat surface and at least two inclining surfaces in the in-plane direction. The width (W) of the flat surface of the ridge structure is 2? (?: light emission wavelength) or less.
    Type: Grant
    Filed: February 8, 2010
    Date of Patent: February 25, 2014
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Xuelun Wang, Mutsuo Ogura
  • Patent number: 8648348
    Abstract: Provided is a light emitting device according to one embodiment including: a substrate which has protrusions on the C-face, and of which unit cells are constructed in a hexagonal structure; a semiconductor layer which is formed on the substrate, in which empty spaces are formed in sides of the protrusions, and of which unit cells are constructed in a hexagonal structure; and a light emitting structure layer comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and second conductive semiconductor layer which are formed on the semiconductor layer, wherein the A-face of the substrate and the A-face of the semiconductor layer form an angle of greater than zero degree, and the protrusions include the R-faces.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: February 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Dae Sung Kang
  • Patent number: 8642991
    Abstract: A photosensitive quantum dot including a quantum dot, and a plurality of photosensitive moieties that are bound to a surface of the quantum dot, wherein each of the photosensitive moieties includes silicon (Si) and a photosensitive functional group. Also disclosed are a composition for forming a quantum dot-containing pattern, where the composition includes the photosensitive quantum dot, and a method of forming a quantum dot-containing pattern using the composition.
    Type: Grant
    Filed: June 8, 2009
    Date of Patent: February 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-jin Park, Kwang-hee Lee, Won-jae Joo, Xavier Bulliard, Yun-hyuk Choi, Kwang-sup Lee
  • Patent number: 8643059
    Abstract: A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and a plurality of buffer layers formed according to a predetermined pattern and formed spaced apart from each other on the plurality of protrusions.
    Type: Grant
    Filed: January 3, 2011
    Date of Patent: February 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-youn Kim, Su-hee Chae, Hyun-gi Hong, Young-jo Tak
  • Patent number: 8643036
    Abstract: A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: February 4, 2014
    Assignee: The Regents of the University of California
    Inventors: Rajat Sharma, Paul Morgan Pattison, John Francis Kaeding, Shuji Nakamura
  • Publication number: 20140014974
    Abstract: A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.
    Type: Application
    Filed: July 12, 2012
    Publication date: January 16, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Chung-Ying Chang, Dennis Wang, Jenq-Dar Tsay
  • Patent number: 8629465
    Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: January 14, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Hung-Ta Lin, Wen-Chih Chiou, Ding-Yuan Chen, Chia-Lin Yu
  • Patent number: 8618563
    Abstract: A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.
    Type: Grant
    Filed: January 25, 2010
    Date of Patent: December 31, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sun Kyung Kim, Hyun Don Song, Jin Wook Lee
  • Patent number: 8610118
    Abstract: The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: December 17, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masakazu Murakami, Toru Takayama, Junya Maruyama