Device Characterized By Semiconductor Body (epo) Patents (Class 257/E33.002)
  • Patent number: 9041048
    Abstract: The semiconductor light emitting device according to embodiments has a first conductive type semiconductor layer, an un-doped semiconductor layer under the first conductive type semiconductor layer, and a plurality of semiconductor structures in the un-doped semiconductor layer.
    Type: Grant
    Filed: September 2, 2009
    Date of Patent: May 26, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Ho Sang Yoon
  • Patent number: 9034676
    Abstract: The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: May 19, 2015
    Assignee: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ki-Seok Kim, Gun-Young Jung
  • Patent number: 8994053
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: March 31, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 8912541
    Abstract: One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: December 16, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Junichiro Sakata, Miyuki Hosoba, Eriko Nishida
  • Patent number: 8895328
    Abstract: A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: November 25, 2014
    Assignee: Epistar Corporation
    Inventors: Sheng Horng Yen, Yung Hsiang Lin, Ying Yong Su, Han Min Wu
  • Patent number: 8860294
    Abstract: To provide a light emitting element, having: a lamination structure including a first conductive layer and a second conductive layer with a light emitting layer interposed between them; a groove structure in which the second conductive layer and the light emitting layer are divided into large and small two parts; a second conductive electrode pad that is electrically connected to the second conductive layer on the divided larger second conductive layer, a first conductive electrode pad on the divided smaller second conductive layer, and two or more electrical contacts connected to the first conductive layer so as to be independent from each other, by a conductive wiring extending to the first conductive layer, with the first conductive electrode pad as a start point.
    Type: Grant
    Filed: December 8, 2010
    Date of Patent: October 14, 2014
    Assignee: Dowa Electronics Materials Co., Ltd.
    Inventors: Tatsunori Toyota, Yutaka Ohta
  • Patent number: 8846547
    Abstract: A thin film deposition apparatus that is suitable for manufacturing large-sized display devices on a mass scale and that can be used for high-definition patterning, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using the method.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: September 30, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Un-Cheol Sung, Dong-Seob Jeong, Jung-Yeon Kim
  • Patent number: 8791499
    Abstract: An improved laser light emitting diode. The device has a gallium nitride substrate structure, which includes a surface region. The device also has an epitaxial layer overlying the surface region and a p-n junction formed within a portion of the epitaxial layer. In a preferred embodiment, the device also has one or more plane or line defects spatially configured in a manner to be free from intersecting the p-n junction, the one or more plane or line defects being at least 1×106 cm?2.
    Type: Grant
    Filed: May 24, 2010
    Date of Patent: July 29, 2014
    Assignee: Soraa, Inc.
    Inventors: Rajat Sharma, Eric M. Hall
  • Patent number: 8785952
    Abstract: A light emitting device is disclosed. The light emitting device includes a first electrode and a second electrode, which have different areas, thereby achieving enhanced bonding reliability.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: July 22, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Dongwook Park
  • Patent number: 8779418
    Abstract: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: July 15, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Junichiro Sakata, Masayuki Sakakura, Masahiro Takahashi, Hideyuki Kishida, Shunpei Yamazaki
  • Patent number: 8778708
    Abstract: There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes: providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of ?25 to 80° C. and under a vacuum in the range of 10?6 to 1,000 Torr, for a first period of 1-100 minutes, to form a partially dried layer; heating the partially dried layer to a temperature above 100° C. for a second period of 1-50 minutes to form a dried layer.
    Type: Grant
    Filed: March 8, 2010
    Date of Patent: July 15, 2014
    Assignee: E I du Pont de Nemours and Company
    Inventors: Reid John Chesterfield, Justin Butler, Paul Anthony Sant
  • Patent number: 8766315
    Abstract: Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.
    Type: Grant
    Filed: September 21, 2010
    Date of Patent: July 1, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong Hyuk Kang, Junghan Shin, Jae Byung Park, Dong-Hoon Lee, Kookheon Char, Seonghoon Lee, WanKi Bae, Jaehoon Lim
  • Patent number: 8742447
    Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a substrate over the light emitting structure; a first reflective layer having a plurality of dielectric layers including a first dielectric layer having a first refractive index over the substrate, and a second dielectric layer having a second refractive index different from the first refractive index over the first dielectric layer; and a second reflective layer over the first reflective layer, the second reflective layer having a refractive index lower than the refractive index of each dielectric layer of the first reflective layer.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: June 3, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sun Kyung Kim, Woon Kyung Choi
  • Patent number: 8723196
    Abstract: Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: May 13, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Daisuke Kumaki, Hisao Ikeda, Junichiro Sakata
  • Patent number: 8710614
    Abstract: A light receiving element includes a core configured to propagate a signal light, a first semiconductor layer having a first conductivity type, the first semiconductor layer being configured to receive the signal light from the core along a first direction in which the core extends, an absorbing layer configured to absorb the signal light received by the first semiconductor layer, and a second semiconductor layer having a second conductivity type opposite to the first conductivity type.
    Type: Grant
    Filed: February 22, 2012
    Date of Patent: April 29, 2014
    Assignee: Fujitsu Limited
    Inventor: Kazumasa Takabayashi
  • Patent number: 8703515
    Abstract: Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: April 22, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 8697463
    Abstract: A method for manufacturing a light-emitting device includes steps of: providing a light-emitting wafer including an upper surface and a lower surface opposite to the upper surface; setting a plurality of scribing streets on the upper surface of the light-emitting wafer; irradiating a laser beam to form a plurality of cutting regions along the scribing streets, wherein each of the plurality of cutting regions has a sharp end, or the plurality of cutting regions forms a specific pattern in a cross-sectional view; and forming a plurality of light-emitting devices by connecting the plurality of cutting regions and extending the plurality of cutting regions from the respective sharp ends thereof to the lower surface of the light-emitting wafer.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: April 15, 2014
    Assignee: Epistar Corporation
    Inventors: Chih-Hui Alston Liu, Tsung-Pao Yeh, Chang Yi-Cheng, Liao Chuen-Min
  • Patent number: 8680569
    Abstract: A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: March 25, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Patent number: 8674399
    Abstract: A light-emitting element includes a ?-Ga2O3 substrate, a GaN-based semiconductor layer formed on the ?-Ga2O3 substrate, and a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: March 18, 2014
    Assignee: Koha Co., Ltd.
    Inventors: Noboru Ichinose, Kiyoshi Shimamura, Kazuo Aoki, Encarnacion Antonia Garcia Villora
  • Patent number: 8664747
    Abstract: A substrate for a light emitting diode (LED) can have one or more trenches formed therein so as to mitigate stress build up within the substrate due to mismatched thermal coefficients of expansion between the substrate and layers of material, e.g., semiconductor material, formed thereon. In this manner, the likelihood of damage to the substrate, such as cracking thereof, is substantially mitigated.
    Type: Grant
    Filed: April 28, 2008
    Date of Patent: March 4, 2014
    Assignee: Toshiba Techno Center Inc.
    Inventor: Jie Cui
  • Patent number: 8664682
    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a first electrode on the first conductive type semiconductor layer, wherein the light emitting structure includes an outer groove formed at an outer area of the light emitting structure, wherein a thickness of an outmost area of the light emitting structure is smaller than a thickness of an center area of the light emitting structure, and wherein the first conductive type semiconductor layer includes AlGaN layer and the second conductive type semiconductor layer includes AlGaN layer.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: March 4, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 8647897
    Abstract: A method for producing and depositing air-stable, easily decomposable, vulcanized ink on any of a wide range of substrates is disclosed. The ink enables high-volume production of optoelectronic and/or electronic devices using scalable production methods, such as roll-to-roll transfer, fast rolling processes, and the like.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: February 11, 2014
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Benjamin D. Weil, Stephen T. Connor, Yi Cui
  • Patent number: 8624273
    Abstract: A multi-chip package comprises a plurality of chip pads and a plurality of LED chips. The chip pads are arranged in an M×N array, M and N each a positive integer greater than 1. A peripheral area of each chip pad comprises a respective first bonding pad, a respective second bonding pad, and a respective third bonding pad arranged in sequence in a clockwise direction. A first orientation of the respective first to third bonding pads in a first row of the N rows differs from a second orientation of the respective first to third bonding pads in a second row of the N rows by 90 degrees. Each of the LED chips is disposed on a respective one of the chip pads and electrically connected to two of the respective first to third bonding pads on a same side of the respective LED chip.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: January 7, 2014
    Assignee: Everlight Electronics Co., Ltd.
    Inventor: Tzu-Hao Chao
  • Patent number: 8604501
    Abstract: An organic light emitting display device includes a substrate; a first electrode layer formed on the substrate; an emission structure layer formed on the first electrode layer; an electron injection layer (EIL) formed immediately on the emission structure layer and comprising a composite layer of LiF:Yb; and a second electrode layer formed on the EIL.
    Type: Grant
    Filed: August 5, 2011
    Date of Patent: December 10, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jin-Young Yun, Seok-Gyu Yoon, Chang-Ho Lee, IL-Soo Oh, Hee-Joo Ko, Se-Jin Cho, Hyung-Jun Song, Sung-Chul Kim, Jong-Hyuk Lee
  • Patent number: 8603922
    Abstract: A method is described for manufacturing a semiconductor device that comprises the steps of providing on a substrate a layer of a conducting material in a pattern comprising isolated elements having a first set of edges. The method further includes providing, on the substrate, a series of wall structures for forming one or more cavities there between. The wall structures have a second set of edges cooperating with the first set of edges. The second set of edges is positioned outside the first set of edges by a pre-defined distance. The method furthermore includes depositing a liquid material in the cavities. A display and an electronic apparatus incorporating the above described features is also disclosed.
    Type: Grant
    Filed: January 27, 2010
    Date of Patent: December 10, 2013
    Assignee: Creator Technology B.V.
    Inventors: Christoph Wilhelm Sele, Nicolaas Aldegonda Jan Maria van Aerle, Eduard Jacobus Antonius Lassauw
  • Patent number: 8581297
    Abstract: A method of manufacturing an organic EL display unit and an organic EL display unit capable of improving light emitting efficiency and life of blue are provided. A hole injection layer are formed on a lower electrode. For a red organic EL device and a green organic EL device, a hole transport layer, a red light emitting layer, and a green light emitting layer made of a polymer material are formed. A hole transport layer made of a low molecular material is formed on the hole injection layer of a blue organic EL device. A blue light emitting layer made of a low molecular material is formed on the red light emitting layer, the green light emitting layer, and the hole transport layer for the blue organic EL device. An electron transport layer, an electron injection layer, and an upper electrode are sequentially formed on the blue light emitting layer.
    Type: Grant
    Filed: November 8, 2010
    Date of Patent: November 12, 2013
    Assignee: Sony Corporation
    Inventors: Yoshiaki Obana, Tomoyuki Higo
  • Publication number: 20130292707
    Abstract: A semiconductor optical emission device comprising a layer of material containing a plurality of stress variations and adhering to a surface of a semiconductor is described. In one embodiment the semiconductor is an indirect band gap semiconductor and is silicon in one aspect, the material of the layer comprises silicon and metal oxides and is prepared by a sol-gel process including thermal annealing in one aspect. The layer urges a plurality of randomly distributed elastic deformations in the semiconductor that substantially enhances the radiative recombination interactions among free carriers in the semiconductor.
    Type: Application
    Filed: May 7, 2012
    Publication date: November 7, 2013
    Inventors: Sufian Abedrabbo, Anthony Thomas Fiory
  • Publication number: 20130285075
    Abstract: A light-emitting device includes a support substrate; a light-emitting stacked layer; transparent-conductive bonding layer; and a semiconductor contact layer. The light-emitting stacked layer includes a first semiconductor layer; an active layer; and a second semiconductor layer, wherein a polarity of the first semiconductor layer is different from that of the semiconductor layer. A first pad is formed on an exposed portion of the first semiconductor layer and a second pad is formed on the semiconductor contact layer. A polarity of the semiconductor contact layer is different from that of the second semiconductor layer.
    Type: Application
    Filed: April 25, 2012
    Publication date: October 31, 2013
    Applicant: Epistar Corporation
    Inventor: Wei-Yu Chen
  • Patent number: 8546818
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: October 1, 2013
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 8541810
    Abstract: A semiconductor nanocrystal includes a core including a first semiconductor material and an overcoating including a second semiconductor material. A monodisperse population of the nanocrystals emits blue light over a narrow range of wavelengths with a high quantum efficiency.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: September 24, 2013
    Assignee: Massachusettts Institute of Technology
    Inventors: Jonathan S. Steckel, John P. Zimmer, Seth Coe-Sullivan, Nathan E. Stott, Vladimir Bulović, Moungi G. Bawendi
  • Patent number: 8525154
    Abstract: Provided is a light-emitting device which has a simple structure and can be manufactured in a simple process, has increased light coupling efficiency and brightness, and can reduce adverse effects of optical resonance on a view angle and emission spectrum. The light-emitting device includes a substrate; a light-emitting diode formed on the substrate; and an optical resonance layer formed outside the light-emitting diode that induces resonance of light emitted from the light-emitting diode.
    Type: Grant
    Filed: November 9, 2005
    Date of Patent: September 3, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yoon-Chang Kim, Young-Woo Song, Sang-Hwan Cho, Ji-Hoon Ahn, Joon-Gu Lee, So-Young Lee, Jong-Seok Oh, Jae-Heung Ha
  • Publication number: 20130200398
    Abstract: A light-emitting device comprises a base, a light-emitting unit comprising a semiconductor stack disposed on the base, and a wavelength conversion layer covering the light-emitting unit, wherein the wavelength conversion layer does not physically contact the base.
    Type: Application
    Filed: February 7, 2012
    Publication date: August 8, 2013
    Inventors: Chih-Ming Wang, Chao-Hsing Chen, Chien-Fu Shen
  • Publication number: 20130193457
    Abstract: According to one embodiment, a light-emitting circuit includes: a plurality of substrates in which wiring pattern layers are formed, the substrates including light-emitting elements connected to and mounted on the wiring pattern layers; and a linear conductor having electric conductivity, the linear conductor including linear joining sections at both ends electrically connected to the wiring pattern layers of the substrates and a convex section formed to be bent in a convex shape in an intermediate section between the joining sections, and the joining sections being respectively joined to the wiring pattern layers among the plurality of substrates adjacent to one another.
    Type: Application
    Filed: September 11, 2012
    Publication date: August 1, 2013
    Applicant: TOSHIBA LIGHTING & TECHNOLOGY CORPORATION
    Inventors: Susumu SHIMASAKI, Takashi OKU, Junichi ISHIGURO, Kenichi ASAMI, Takashi INOUE
  • Patent number: 8487327
    Abstract: A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm?2.
    Type: Grant
    Filed: May 31, 2012
    Date of Patent: July 16, 2013
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yohei Enya, Yusuke Yoshizumi, Takashi Kyono, Takamichi Sumitomo, Katsushi Akita, Masaki Ueno, Takao Nakamura
  • Patent number: 8461604
    Abstract: An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The radiation-emitting semiconductor components each include an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the radiation-emitting semiconductor components that is remote from the carrier substrate. The radiation-emitting semiconductor components are provided with an electrically insulating layer, which in each case has a cutout in a region of the first contact area. Conductive structures are arranged in regions on the electrically insulating layer.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: June 11, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Bert Braune, Jörg Erich Sorg, Walter Wegleiter, Karl Weidner, Oliver Wutz
  • Patent number: 8455322
    Abstract: Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.
    Type: Grant
    Filed: March 8, 2010
    Date of Patent: June 4, 2013
    Assignee: International Business Machines Corporation
    Inventors: Oleg Gluschenkov, Rajendran Krishnasamy, Kathryn T. Schonenberg
  • Patent number: 8455893
    Abstract: A light-emitting apparatus can prevent a shadow mask from contacting a light-emitting medium to suppress damage of the medium, by using a conductive layer formed on a device isolation layer as a pressing member for the shadow mask, and can attain more secure conduction between a second electrode and an auxiliary electrode. The apparatus can be formed by forming first and auxiliary electrodes on a substrate; forming a device isolation layer between the first electrodes and forming an opening on each of the first and auxiliary electrodes; forming a conductive layer on the device isolation layer to cover the openings above the auxiliary electrodes; bringing a shadow mask into contact with the conductive layer and forming a light-emitting medium in a thickness smaller than the thickness of the conductive layer; and forming a second electrode to cover the light-emitting medium, the device isolation layer, and the conductive layer.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: June 4, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventor: Naoyuki Ito
  • Publication number: 20130126867
    Abstract: High yield substrate assembly. In accordance with a first method embodiment, a plurality of piggyback substrates are attached to a carrier substrate. The edges of the plurality of the piggyback substrates are bonded to one another. The plurality of piggyback substrates are removed from the carrier substrate to form a substrate assembly. The substrate assembly is processed to produce a plurality of integrated circuit devices on the substrate assembly. The processing may use manufacturing equipment designed to process wafers larger than individual instances of the plurality of piggyback substrates.
    Type: Application
    Filed: May 2, 2012
    Publication date: May 23, 2013
    Applicant: INVENSAS CORPORATION
    Inventors: Liang Wang, Ilyas Mohammed, Masud Beroz
  • Patent number: 8436393
    Abstract: A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
    Type: Grant
    Filed: April 4, 2011
    Date of Patent: May 7, 2013
    Assignee: Osram GmbH
    Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
  • Publication number: 20130106812
    Abstract: A display panel includes: a plurality of first wirings extending in a row direction; a plurality of second wirings extending in a column direction; and a plurality of pixels each arranged in proximity to an intersection of each of the first wirings and each of the second wirings. Two wirings of the plurality of first wirings or two wirings of the plurality of second wirings are disposed in a common region interposed between two pixels next to each other, and layouts of the respective two wirings in a thickness direction are different from each other at least in a part of each of the layouts.
    Type: Application
    Filed: October 22, 2012
    Publication date: May 2, 2013
    Applicant: SONY CORPORATION
    Inventor: Sony Corporation
  • Publication number: 20130105827
    Abstract: Disclosed is a light emitting device including: a light emitting structure including a plurality of light emitting regions including a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions; a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions; an intermediate pad disposed on the second semiconductor layer in at least still another of the light emitting regions; and at least one connection electrode to sequentially connect the light emitting regions in series, wherein the light emitting regions connected in series are divided into 1st to ith light emitting region groups and areas of light emitting regions that belong to different groups are different (where 1<i?j, each of i and j is a natural number, and j is a last light emitting region group).
    Type: Application
    Filed: October 25, 2012
    Publication date: May 2, 2013
    Applicant: LG INNOTEK CO., LTD.
    Inventor: LG INNOTEK CO., LTD.
  • Publication number: 20130105828
    Abstract: Disclosed is a light emitting device including a light emitting structure including a plurality of light emitting regions including a first semiconductor layer, an active layer and a second semiconductor layer, and a plurality of boundary regions disposed between the light emitting regions, a first electrode unit disposed on the first semiconductor layer in one of the light emitting regions, a second electrode unit disposed on the second semiconductor layer in another of the light emitting regions, at least one connection electrode to electrically connect the first semiconductor layer of one of adjacent light emitting regions to the second semiconductor layer of the other thereof, and an intermediate pad disposed on the first semiconductor layer or the second semiconductor layer in at least one of the light emitting regions, wherein the light emitting regions are connected in series through the connection electrode.
    Type: Application
    Filed: October 26, 2012
    Publication date: May 2, 2013
    Applicant: LG INNOTEK CO., LTD.
    Inventor: LG INNOTEK CO., LTD.
  • Patent number: 8409366
    Abstract: In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: April 2, 2013
    Assignee: Oki Data Corporation
    Inventors: Mitsuhiko Ogihara, Tomohiko Sagimori, Masaaki Sakuta, Akihiro Hashimoto
  • Publication number: 20130052767
    Abstract: The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation.
    Type: Application
    Filed: July 22, 2010
    Publication date: February 28, 2013
    Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ki-Seok Kim, Gun-Young Jung
  • Publication number: 20130048957
    Abstract: Provided is a light emitting device having a mechanism capable of efficiently dissipating heat kept in the device to the outside. The light emitting device includes: a first substrate including a heat radiation layer; a second substrate exhibiting light transmittance; and a plurality of organic EL elements provided, between the first substrate and the second substrate to emit light toward the second substrate. The second substrate includes fibrous, thermally conductive wires dispersively arranged therein, and the thermally conductive wires have a diameter of 0.4 ?m or less and have a thermal conductivity higher than the remaining component of the second substrate excluding the thermally conductive wires.
    Type: Application
    Filed: September 27, 2010
    Publication date: February 28, 2013
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventor: Yoshinobu Ono
  • Patent number: 8383435
    Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.
    Type: Grant
    Filed: January 12, 2010
    Date of Patent: February 26, 2013
    Assignee: Avago Technologies Fiber IP (Singapore) Pte. Ltd
    Inventors: Marzia Rosso, Alessandro Stano, Ruiyu Fang, Paolo Valenti, Pietro Della Casa, Simone Codato, Cesare Rigo, Claudio Coriasso
  • Patent number: 8384078
    Abstract: An organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes: an insulating layer formed on a substrate; a resistance layer of oxide semiconductor formed on the insulating layer; a wiring layer connected to both side portions of the resistance layer; an organic layer formed on the upper portion including the resistance layer and the wiring layer; and a capping layer formed on the organic layer to be overlapped with the resistance layer.
    Type: Grant
    Filed: July 7, 2010
    Date of Patent: February 26, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ki-Nyeng Kang, Young-Shin Pyo, Jae-Seob Lee
  • Publication number: 20130045554
    Abstract: To provide a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics. A base substrate having an insulating surface to which a single-crystal semiconductor layer is attached is divided into strips and is used for a driver circuit of a display device. Alternatively, a base substrate having an insulating surface to which a plurality of single-crystal semiconductor layers is attached is divided into strips and is used for a driver circuit of a display device. Accordingly, a driver circuit corresponding to a size of a display device can be used for the display device, and a display device which has a narrower frame region and which includes a driver circuit not affected by variation in transistor characteristics can be provided.
    Type: Application
    Filed: October 11, 2012
    Publication date: February 21, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Semiconductor Energy Laboratory Co., Ltd.
  • Publication number: 20130037831
    Abstract: A method for manufacturing a device that includes an opto-electronic module includes creating a wafer stack including multiple active optical components mounted on a substrate wafer, and an optics wafer including multiple passive optical components. The optics wafer can include a blocking portion, which is substantially non-transparent for at least a specific wavelength range, and a transparent portion, which is substantially non-transparent for the specific wavelength range. Each opto-electronic module includes a substrate member, an optics member, an active optical component mounted on the substrate member, and a passive optical component. The optics member is directly or indirectly fixed to the substrate member. The opto-electronic modules can have excellent manufacturability, small dimensions and high alignment accuracy.
    Type: Application
    Filed: August 8, 2012
    Publication date: February 14, 2013
    Applicant: HEPTAGON MICRO OPTICS PTE. LTD.
    Inventors: Hartmut Rudmann, Michel Barge
  • Patent number: 8368079
    Abstract: To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
    Type: Grant
    Filed: October 27, 2009
    Date of Patent: February 5, 2013
    Assignee: Semicondutor Energy Laboratory Co., Ltd.
    Inventor: Kengo Akimoto