For Current Confinement (epo) Patents (Class 257/E33.011)
-
Patent number: 8981340Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.Type: GrantFiled: April 4, 2013Date of Patent: March 17, 2015Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Yasutoshi Kawaguchi, Toshitaka Shimamoto, Akihiko Ishibashi, Isao Kidoguchi, Toshiya Yokogawa
-
Patent number: 8941136Abstract: A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.Type: GrantFiled: August 23, 2010Date of Patent: January 27, 2015Assignee: El-Seed CorporationInventors: Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, Isamu Akasaki, Toshiyuki Kondo, Fumiharu Teramae, Tsukasa Kitano, Atsushi Suzuki
-
Patent number: 8823049Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.Type: GrantFiled: March 11, 2013Date of Patent: September 2, 2014Assignee: TSMC Solid State Lighting Ltd.Inventors: Ding-Yuan Chen, Chen-Hua Yu, Wen-Chih Chiou
-
Patent number: 8791469Abstract: In a semiconductor light emitting element (1) having a sapphire substrate (100), and lower (210) and upper (220) semiconductor layers laminated on the sapphire substrate, the substrate includes a substrate top surface (113), a substrate bottom surface (114), first substrate side surfaces (111) and second substrate side surfaces (112); plural first (121a) and second (122a) cutouts are provided at a border between the first substrate side surface, the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface (213), first lower semiconductor side surfaces (211) and second lower semiconductor side surfaces (212); plural first projecting portions (211a) and plural first depressing portions (211b) are provided on the first lower semiconductor side surface; and plural second protruding portions (212a) and second flat portions (212b) are provided on the second lower semiconductor side surface.Type: GrantFiled: December 4, 2012Date of Patent: July 29, 2014Assignee: Toyoda Gosei Co., Ltd.Inventors: Hironao Shinohara, Kensuke Hirano
-
Patent number: 8754438Abstract: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.Type: GrantFiled: February 19, 2012Date of Patent: June 17, 2014Assignee: Advanced Optoelectronics Technology, Inc.Inventors: Ya-Wen Lin, Shih-Cheng Huang, Po-Min Tu, Chia-Hung Huang, Shun-Kuei Yang
-
Patent number: 8748932Abstract: Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type semiconductor layer, a light emitting layer over the first conductive type semiconductor layer, an electron blocking layer over the light emitting layer, and a second conductive type semiconductor layer over the electron blocking layer. The electron blocking layer comprises a pattern having a height difference.Type: GrantFiled: January 25, 2012Date of Patent: June 10, 2014Assignee: LG Innotek Co., Ltd.Inventors: Jong Pil Jeong, Jung Hyun Hwang, Chong Cook Kim, Sung Jin Son
-
Patent number: 8742394Abstract: A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece.Type: GrantFiled: July 17, 2012Date of Patent: June 3, 2014Assignee: Stanley Electric Co., Ltd.Inventor: Takuya Kazama
-
Patent number: 8728834Abstract: A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.Type: GrantFiled: July 2, 2012Date of Patent: May 20, 2014Assignee: Phostek, Inc.Inventor: Yuan-Hsiao Chang
-
Patent number: 8643192Abstract: An integrated circuit package has a host integrated circuit with an active front side that is surface-mounted on a support and an inactive back side. Conductive vias extend through the integrated circuit between the front and back sides. A redistribution layer on the back side of the host integrated circuit provides conductive traces and contact pads. The traces of the redistribution layer establish connection between the conductive vias and the contact pads. At least one additional component is surface-mounted on the back side of the host integrated circuit by electrical connection to the contact pads of the redistribution layer to provide a compact three-dimensional structure. In an alternative embodiment, the additional components can be mounted on the active side.Type: GrantFiled: May 16, 2012Date of Patent: February 4, 2014Assignee: Microsemi Semiconductor LimitedInventors: Piers Tremlett, Michael Anthony Higgins, Martin McHugh
-
Patent number: 8618551Abstract: According to one embodiment, a semiconductor light emitting device includes a substrate, a first electrode, a first conductivity type layer, a light emitting layer, a second conductivity type layer and a second electrode. The first conductivity type layer includes a first contact layer, a window layer having a lower impurity concentration than the first contact layer and a first cladding layer. The second conductivity type layer includes a second cladding layer, a current spreading layer and a second contact layer. The second electrode includes a narrow-line region on the second contact layer and a pad region electrically connected to the narrow-line region. Band gap energies of the first contact and window layers are larger than that of the light emitting layer. The first contact layer is provided selectively between the window layer and the first electrode and without overlapping the second contact layer as viewed from above.Type: GrantFiled: August 29, 2011Date of Patent: December 31, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yukie Nishikawa, Hironori Yamasaki, Katsuyoshi Furuki, Takashi Kataoka
-
Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same
Patent number: 8592839Abstract: Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.Type: GrantFiled: December 14, 2010Date of Patent: November 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hyung-su Jeong, Young-soo Park, Su-hee Chae, Bok-ki Min, Jun-youn Kim, Hyun-gi Hong, Young-jo Tak, Jae-won Lee -
Patent number: 8564010Abstract: An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions.Type: GrantFiled: August 4, 2011Date of Patent: October 22, 2013Assignee: Toshiba Techno Center Inc.Inventors: Chih-Wei Chuang, Chao-Kun Lin
-
Patent number: 8536597Abstract: A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.Type: GrantFiled: August 22, 2011Date of Patent: September 17, 2013Assignee: Advanced Optoelectronic Technology, Inc.Inventors: Po-Min Tu, Shih-Cheng Huang, Shun-Kuei Yang, Chia-Hung Huang
-
Patent number: 8536594Abstract: Solid state lighting (SSL) devices (e.g., devices with light emitting diodes) with reduced dimensions (e.g., thicknesses) and methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first region and a second region laterally spaced apart from the first region and an insulating material between and electrically isolating the first and second regions. The SSL device also includes a conductive material between the first and second regions and adjacent the insulating material to electrically couple the first and second regions in series.Type: GrantFiled: January 28, 2011Date of Patent: September 17, 2013Assignee: Micron Technology, Inc.Inventor: Vladimir Odnoblyudov
-
Patent number: 8530257Abstract: Methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.Type: GrantFiled: August 27, 2012Date of Patent: September 10, 2013Assignee: Finisar CorporationInventor: Ralph Herbert Johnson
-
Patent number: 8415700Abstract: Provided is a light emitting device. The light emitting device includes a conductive support substrate, an ohmic contact layer, a current blocking layer, a light emitting structure layer, an electrode, and a first current guide layer. The ohmic contact layer and the current blocking layer are disposed on the conductive support substrate. The light emitting structure layer is disposed on the ohmic contact layer and the current blocking layer. The electrode is disposed on the light emitting structure layer. At least a part of the electrode is overlapped with the current blocking layer. The first current guide layer is disposed between the current blocking layer and the conductive support substrate. At least a part of the first current guide layer is overlapped with the current blocking layer.Type: GrantFiled: February 24, 2011Date of Patent: April 9, 2013Assignee: LG Innotek Co., Ltd.Inventor: Hwan Hee Jeong
-
Patent number: 8399273Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.Type: GrantFiled: August 12, 2009Date of Patent: March 19, 2013Assignee: TSMC Solid State Lighting Ltd.Inventors: Ding-Yuan Chen, Chen-Hua Yu, Wen-Chih Chiou
-
Publication number: 20130049027Abstract: A light emitting element includes a semiconductor substrate, and an island structure formed on the semiconductor substrate. The island structure includes a light-emitting-unit thyristor and a current confinement structure. The light-emitting-unit thyristor includes stacked semiconductor layers having a pnpn structure. The current confinement structure includes a high-resistance region and a conductive region, and confines carriers in the conductive region.Type: ApplicationFiled: February 23, 2012Publication date: February 28, 2013Applicant: FUJI XEROX CO. LTD.Inventors: Taku KINOSHITA, Takashi KONDO, Kazutaka TAKEDA, Hideo NAKAYAMA
-
Publication number: 20130026445Abstract: An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.Type: ApplicationFiled: July 26, 2011Publication date: January 31, 2013Inventor: Farzad PARSAPOUR
-
Publication number: 20130020552Abstract: A semiconductor light-emitting element includes a support substrate, a semiconductor film including a light-emitting layer provided on the support substrate, a surface electrode provided on a light-extraction-surface-side surface of the semiconductor film, and a light-reflecting layer provided between the support substrate and the semiconductor film, forming a light-reflecting surface. The surface electrode includes a first electrode piece and a second electrode piece. The light-reflecting layer includes a reflection electrode including a third electrode piece and a fourth electrode piece. The first electrode piece and the third electrode piece are arranged so as to not overlap when projected onto a projection surface parallel to a principal surface of the semiconductor film, and the shortest distance between the first electrode piece and the fourth electrode piece, is greater than the shortest distance between the first electrode piece and the third electrode piece.Type: ApplicationFiled: July 17, 2012Publication date: January 24, 2013Applicant: STANLEY ELECTRIC CO., LTD.Inventor: Takuya KAZAMA
-
Publication number: 20130001508Abstract: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.Type: ApplicationFiled: February 19, 2012Publication date: January 3, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: YA-WEN LIN, SHIH-CHENG HUANG, PO-MIN TU, CHIA-HUNG HUANG, SHUN-KUEI YANG
-
Publication number: 20130001510Abstract: An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer configured as a second confinement layer, an electrode on the second semiconductor layer, and a current blocking structure on the reflective conductive layer comprising a thin transparent insulation layer aligned with the electrode configured to block current flow from the electrode, to dissipate heat generated at an interface between the first semiconductor layer and the reflective conductive layer, and to transmit electromagnetic radiation reflected from the reflective conductive layer,Type: ApplicationFiled: June 28, 2012Publication date: January 3, 2013Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.Inventors: CHEN-FU CHU, FENG-HSU FAN
-
Publication number: 20120313075Abstract: An optical component is disclosed that comprises a first substrate, an optical material comprising quantum confined semiconductor nanoparticles disposed over a predetermined region of a first surface of the first substrate, a layer comprising an adhesive material disposed over the optical material and any portion of the first surface of the first substrate not covered by the optical material, and a second substrate disposed over the layer comprising an adhesive material, wherein the first and second substrates are sealed together. In certain embodiments, the optical component further includes a second optical material comprising quantum confined semiconductor nanoparticles disposed between the layer comprising the adhesive material and the second substrate. Method are also disclosed. Also disclosed are products including the optical component.Type: ApplicationFiled: April 16, 2012Publication date: December 13, 2012Inventors: JOHN R. LINTON, Emily M. Squires, Rohit Modi, David Gildea
-
Patent number: 8329524Abstract: A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.Type: GrantFiled: March 7, 2012Date of Patent: December 11, 2012Assignee: Canon Kabushiki KaishaInventor: Mitsuhiro Ikuta
-
Patent number: 8325775Abstract: Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.Type: GrantFiled: November 8, 2010Date of Patent: December 4, 2012Assignee: Finisar CorporationInventor: Ralph H. Johnson
-
Patent number: 8314415Abstract: A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.Type: GrantFiled: June 20, 2008Date of Patent: November 20, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Martin Strassburg, Lutz Hoeppel, Matthias Sabathil, Matthias Peter, Uwe Strauss
-
Patent number: 8293555Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.Type: GrantFiled: June 21, 2011Date of Patent: October 23, 2012Assignee: Ricoh Company, Ltd.Inventors: Takashi Takahashi, Morimasa Kaminishi, Shunichi Sato, Akihiro Itoh, Naoto Jikutani
-
Patent number: 8288185Abstract: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.Type: GrantFiled: May 27, 2010Date of Patent: October 16, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: In Gyoo Kim, Dae Seo Park, Jun Taek Hong, Gyungock Kim
-
Publication number: 20120251039Abstract: Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.Type: ApplicationFiled: March 30, 2012Publication date: October 4, 2012Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Hitoshi SHIMIZU, Toshihito SUZUKI, Yasumasa KAWAKITA, Keishi TAKAKI
-
Publication number: 20120195340Abstract: Solid state lighting devices containing quantum dots dispersed in polymeric or silicone acrylates and deposited over a light source. Solid state lighting devices with different populations of quantum dots either dispersed in matrix materials or not are also provided. Also provided are solid state lighting devices with non-absorbing light scattering dielectric particles dispersed in a matrix material containing quantum dots and deposited over a light source. Methods of manufacturing solid state lighting devices containing quantum dots are also provided.Type: ApplicationFiled: January 28, 2011Publication date: August 2, 2012Inventors: Kwang-Ohk Cheon, Jennifer Gillies, David Socha, David Duncan, Michael LoCasio
-
Publication number: 20120194103Abstract: Solid state lighting (SSL) devices (e.g., devices with light emitting diodes) with reduced dimensions (e.g., thicknesses) and methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first region and a second region laterally spaced apart from the first region and an insulating material between and electrically isolating the first and second regions. The SSL device also includes a conductive material between the first and second regions and adjacent the insulating material to electrically couple the first and second regions in series.Type: ApplicationFiled: January 28, 2011Publication date: August 2, 2012Applicant: MICRON TECHNOLOGY, INC.Inventor: Vladimir Odnoblyudov
-
Patent number: 8198638Abstract: A light emitting device structure, wherein the emitter layer structure comprises one or more device wells defined by thick field oxide regions, and a method of fabrication thereof are provided. Preferably, by defining device well regions after depositing the emitter layer structure, emitter layer structures with reduced topography may be provided, facilitating processing and improving layer to layer uniformity. The method is particularly applicable to multilayer emitter layer structures, e.g. comprising a layer stack of active layer/drift layer pairs. Preferably, active layers comprise a rare earth oxide, or rare earth doped dielectric such as silicon dioxide, silicon nitride, or silicon oxynitride, and respective drift layers comprise a suitable dielectric, preferably silicon dioxide, of an appropriate thickness to control excitation energy. Pixellated light emitting structures, or large area, high brightness emitter layer structures, e.g.Type: GrantFiled: July 14, 2010Date of Patent: June 12, 2012Assignee: Group IV Semiconductor Inc.Inventors: Thomas MacElwee, Alasdair Rankin
-
Patent number: 8188487Abstract: A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or below the active layer using a first trench structure. A second current confinement layer having a second electrically conductive region and a second insulating region is formed above or below the first current confinement layer using a second trench structure. The first and second trench structures extend from a top surface of the upper multilayer mirror towards the substrate such that the second trench structure surrounds the first trench structure. When the surface emitting laser is viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.Type: GrantFiled: July 15, 2010Date of Patent: May 29, 2012Assignee: Canon Kabushiki KaishaInventor: Mitsuhiro Ikuta
-
Patent number: 8183074Abstract: A method for manufacturing a light emitting element includes the steps of (A) forming sequentially a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type on a substrate, (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region, and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer.Type: GrantFiled: January 14, 2008Date of Patent: May 22, 2012Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Rintaro Koda, Tomoyuki Oki
-
Patent number: 8097897Abstract: This invention provides a high-efficiency light-emitting device and the manufacturing method thereof. The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region.Type: GrantFiled: March 4, 2008Date of Patent: January 17, 2012Assignee: Epistar CorporationInventors: Chia-Ming Chuang, Donald Tai-Chan Huo, Chia-Chen Chang, Tzu-Ling Yang, Chen Ou
-
Patent number: 8076685Abstract: A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer includes a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The second semiconductor layer is formed on and in contact with the first semiconductor layer and has a smaller lattice constant than that of the first semiconductor layer. The third semiconductor layer is formed on and in contact with the second semiconductor layer and has a lattice constant that is smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer.Type: GrantFiled: September 10, 2009Date of Patent: December 13, 2011Assignee: Panasonic CorporationInventors: Satoshi Tamura, Ryo Kajitani
-
Patent number: 8022424Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: GrantFiled: June 5, 2007Date of Patent: September 20, 2011Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
-
Patent number: 7998771Abstract: Provided is a method of manufacturing a light emitting diode using a nitride semiconductor, which including the steps of: forming n- and p-type current spreading layers using a hetero-junction structure; forming trenches by dry-etching the n- and p-type current spreading layers; forming an n-type metal electrode layer in the trench of the n-type current spreading layer; forming a p-type metal electrode layer in the trench of the p-type current spreading layer; and forming a transparent electrode layer on the p-type metal electrode layer, thereby improving current spreading characteristics as compared with the conventional method of manufacturing the light emitting diode, and enhancing operating characteristics of the light emitting diode.Type: GrantFiled: November 26, 2007Date of Patent: August 16, 2011Assignee: Electronics and Telecommunications Research InstituteInventor: Sung Bum Bae
-
Patent number: 7985964Abstract: The present invention discloses a light-emitting semiconductor device, includes: a first electrode that is made of a high reflective metal; a second electrode; a tunnel junction layer coupling to the first electrode through a first ohmic contact and generating a tunnel current by applying a reverse bias voltage between the first electrode and the second electrode; a light-emitting layer provided between the tunnel junction layer and the second electrode.Type: GrantFiled: November 17, 2008Date of Patent: July 26, 2011Assignee: Meijo UniversityInventors: Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Motoaki Iwaya
-
Patent number: 7977156Abstract: A method for manufacturing chip stack packages may include: providing at least two wafers, each wafer having a plurality of chips, and scribe lanes formed between and separating adjacent chips; forming a plurality of via holes in peripheral portions of the scribe lanes; forming connection vias by filling the via holes; establishing electrical connections between the chip pads and corresponding connection vias; removing material from the back sides of the wafers to form thinned wafers; separating the thinned wafers into individual chips by removing a central portion of each scribe lane; attaching a first plurality of individual chips to a test wafer; attaching a second plurality of individual chips to the first plurality of individual chips to form a plurality of chip stack structures; encapsulating the plurality of chip stack structures; and separating the plurality of chip stack structures to form individual chip stack packages.Type: GrantFiled: April 22, 2009Date of Patent: July 12, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Kang-Wook Lee, Gu-Sung Kim, Dong-Hyeon Jang, Seung-Duk Baek, Jae-Sik Chung
-
Patent number: 7968362Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.Type: GrantFiled: March 20, 2009Date of Patent: June 28, 2011Assignee: Ricoh Company, Ltd.Inventors: Takashi Takahashi, Morimasa Kaminishi, Shunichi Sato, Akihiro Itoh, Naoto Jikutani
-
Publication number: 20110147699Abstract: The present invention is generally directed to a method of suppressing the Auger rate in confined structures, comprising replacing an abrupt confinement potential with either a smooth confinement potential or a confinement potential of a certain size found by increasing the confinement potential width until the Auger recombination rate undergoes strong oscillations and establishes a periodic minima. In addition, the present invention provides for the design of structures with high quantum efficiency.Type: ApplicationFiled: December 22, 2009Publication date: June 23, 2011Inventors: Alexander L. Efros, George E. Cragg
-
Patent number: 7944957Abstract: A surface emitting semiconductor laser includes a substrate, a lower reflective mirror formed on the substrate, an active layer formed on the lower reflective mirror, an upper reflective mirror formed on the active layer, an optical mode controlling layer formed between the lower reflective mirror and the upper reflective mirror, and a current confining layer formed between the lower reflective mirror and the upper reflective mirror. The active layer emits light. The upper reflective mirror forms a resonator between the lower reflective mirror and the upper reflective mirror. In the optical mode controlling layer, an opening is formed for selectively absorbing or reflecting off light that is emitted in the active layer. The optical mode controlling layer optically controls mode of laser light. The current confining layer confines current that is applied during driving.Type: GrantFiled: November 28, 2007Date of Patent: May 17, 2011Assignee: Fuji Xerox Co., Ltd.Inventors: Teiichi Suzuki, Daisuke Nagao
-
Patent number: 7915625Abstract: Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.Type: GrantFiled: September 11, 2008Date of Patent: March 29, 2011Assignee: Sony CorporationInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
-
Patent number: 7888686Abstract: A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.Type: GrantFiled: January 16, 2008Date of Patent: February 15, 2011Assignee: Group IV Semiconductor Inc.Inventors: George Chik, Thomas MacElwee, Iain Calder, E. Steven Hill
-
Patent number: 7829912Abstract: Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.Type: GrantFiled: April 16, 2007Date of Patent: November 9, 2010Assignee: Finisar CorporationInventor: Ralph H. Johnson
-
Patent number: 7795630Abstract: A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a reactive current so that it becomes possible to achieve a semiconductor device having superior device characteristics.Type: GrantFiled: August 6, 2004Date of Patent: September 14, 2010Assignee: Panasonic CorporationInventors: Hisashi Nakayama, Tetsuzo Ueda, Masaaki Yuri, Toshiyuki Takizawa
-
Publication number: 20100207160Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer including a first carrier blocking layer of semiconductor material; an active layer below the first conductive semiconductor layer; and a second conductive semiconductor layer below the active layer.Type: ApplicationFiled: February 12, 2010Publication date: August 19, 2010Inventor: Hyung Jo PARK
-
Publication number: 20100207100Abstract: A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.Type: ApplicationFiled: June 20, 2008Publication date: August 19, 2010Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Martin Strassburg, Lutz Hocppel, Matthias Sabathil, Matthias Peter, Uwe Strauss
-
Patent number: 7709848Abstract: A group III nitride semiconductor light emitting device according to the present invention includes an intermediate layer formed of AlxGa1-x-yInyN(0<X<1, 0<y<1, x+y<1) between an active layer and a cladding layer and an electron blocking layer formed of p-type group III nitride semiconductor having a smaller electron affinity than that of the intermediate layer so as to be in contact with the intermediate layer. The semiconductor light emitting layer may be a laser diode or a LED.Type: GrantFiled: November 16, 2006Date of Patent: May 4, 2010Assignee: Panasonic CorporationInventor: Katsumi Sugiura