Abstract: A light emitting device including a cell area, a peripheral area surrounding the cell area, a light source disposed in the cell area and including at least one light emitting layer, a first light shielding layer disposed in the cell area and the peripheral area, a portion of the first light shielding layer overlapping with the light source, and a rough structure disposed in the cell area and overlapping with the light source.

Abstract: A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Abstract: A package includes: a leadframe made of conductive material and on which the plurality of electronic components are to be mounted, the leadframe including a first surface and a second surface opposite to the first surface and including a plurality of elongate portions arranged in parallel to each other with a gap interposed between the adjacent elongate portions; a heat sink including a first surface and a second surface opposite to the first surface, wherein the leadframe is disposed above the heat sink such that the second surface of the leadframe faces the first surface of the heat sink; and a resin portion, wherein the leadframe and the heat sink are embedded in the resin portion such that the first surface of the leadframe and the second surface of the heat sink are exposed from the resin portion, respectively.

Abstract: A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract: LED devices includes a lead frame having a reflector cup with a round bottom surface and a wall surface having a variable inclination with respect to the bottom surface and defining an opening at an upper end thereof. An LED is mounted on the bottom surface of the reflector cup, and an LED module includes first and second LED device that emit different colors. The first and second LED devices have substantially matched far field patterns in a first and second direction, where a first viewing angle in the first direction is less than about 99°.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer connected to the first conductive semiconductor layer of a first light emitting cell of the plural light emitting cells; a plurality of second electrode layers under the light emitting cells, a portion of the second electrode layers being connected to the first conductive semiconductor layer of an adjacent light emitting cells; a third electrode layer disposed under a last light emitting cell of the plural light emitting cells; a first electrode connected to the first electrode layer; a second electrode connected to the third electrode layer; an insulating layer around the first to third electrode layers; and a support member under the insulating layer.

Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

Abstract: A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material.

Abstract: Provided is a backside illuminated semiconductor light-receiving device enhancing a frequency characteristic without deteriorating assembling operability. The light-receiving device includes a rectangular substrate; a light receiving mesa portion formed on a center portion of one side on a front surface of the substrate and includes a PN junction portion; a P-type electrode formed on the light receiving mesa portion and conductive with one side of the PN junction portion; an N-type electrode mesa portion formed on one corner portion of the one side; an N-type electrode pulled out to the N-type electrode mesa portion and conductive with the other side of the PN junction portion; a P-type electrode mesa portion and a dummy electrode mesa portion formed in a region including three other corner portions; and a dummy electrode formed on the dummy electrode mesa portion.

Abstract: A method is provided for determining a color using a CMOS image sensor. The CMOS image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The method includes applying a first voltage on the n-type substrate and obtaining a first output, which is associated with the first voltage. The method further includes applying a second voltage on the n-type substrate and obtaining a second output, which is associated with the second voltage. The method additionally includes applying a third voltage on the n-type substrate and obtaining a third output, which is associated with the third voltage. The method also includes providing a plurality of weighting factors and determining the color based on the plurality of weighting factors, the first output, the second output, and the third output.

Abstract: An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.

Abstract: The organic electroluminescence device includes an anode, a cathode, a first electron injection layer, an electron transport layer, and a light emitting layer. The first electron injection layer is made of alkali metal and is formed between the anode and the cathode. The electron transport layer is formed between the first electron injection layer and the anode. The light emitting layer is formed between the electron transport layer and the anode. The organic electroluminescence element further includes a second electron injection layer. The second electron injection layer is formed between the first electron injection layer and the electron transport layer. The second electron injection layer is made of amorphous inorganic material.

Abstract: Disclosed is a semiconductor light emitting device including: a substrate; an n-type semiconductor layer giving an electron when receiving voltage; a p-type semiconductor layer giving a hole when receiving voltage; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a quantum well structure to facilitate coupling between an electron and a hole; an n-type electrode including conductivity for applying voltage to the n-type semiconductor layer; a p-type electrode including conductivity for applying voltage to the p-type semiconductor layer; and am electric-current diffusion and hole injection layer provided between the p-type semiconductor layer and the p-type electrode and doped with n-type impurities and p-type impurities for diffusing an electric current and injecting a hole between the p-type electrode and the p-type semiconductor layer.

Abstract: LED devices includes a lead frame having a reflector cup with a round bottom surface and a wall surface having a variable inclination with respect to the bottom surface and defining an opening at an upper end thereof. An LED is mounted on the bottom surface of the reflector cup, and an LED module includes first and second LED device that emit different colors. The first and second LED devices have substantially matched far field patterns in a first and second direction, where a first viewing angle in the first direction is less than about 99°.

Abstract: An inorganic electroluminescence device has a structure including a phosphor layer sandwiched between a first electrode and a second electrode; and a semiconductor structure in which N-type semiconductors and a P-type semiconductor, made of inorganic semiconductor materials, are joined to form an NPN type structure. The phosphor is made of an inorganic substance. The first electrode is to be a cathode and is formed on an insulating glass substrate. The second electrode is to be an anode and is disposed opposite the first electrode. The semiconductor structure is disposed between the cathode that is the first electrode and the phosphor layer.

Abstract: A self emission silicon emission display is provided at a low price, which contains silicon and oxygen which exist in abundance on the earth as the main component and which can be easily formed by conventional silicon process. A light emission element includes a first electrode for injecting electrons, a second electrode for injecting holes, and a light emission part electrically connected to the first electrode and the second electrode, where the light emission part includes amorphous or polycrystalline silicon consisting of a single layer or plural layers and where the dimension of the silicon in at least one direction is controlled to be several nanometers.

Abstract: Provided is a liquid crystal display device, including: a liquid crystal display panel; and a backlight unit, in which: the backlight unit includes: a plurality of light emitting diodes each having an anode and a cathode; a first substrate; and a second substrate, the plurality of light emitting diodes being mounted on the first substrate and the second substrate; the first substrate and the second substrate are disposed adjacent to each other; light emitting diodes which are adjacent across a boundary between the first substrate and the second substrate are disposed so that the respective anodes are opposed to each other and so as to have a pitch equal to or smaller than a pitch of other adjacent light emitting diodes.

Abstract: A light emitting diode module includes a substrate, at least two spaced apart light emitting diodes formed on the substrate, an insulating layer, and an electrically conductive layer. Each of the light emitting diodes includes a light emitting unit, an n-electrode, and a p-electrode. The light emitting unit has first and second portions. The first portion has an n-type top face and a first stepped side. The second portion has a p-type top face and a second stepped side. The insulating layer is formed on the n-type top face and the first stepped side of the first portion of one of the light emitting diodes, and the second stepped side and the p-type top face of the second portion of the other one of the light emitting diodes. The electrically conductive layer is formed on the insulating layer. A method of making the light emitting diode module is also disclosed.

Abstract: A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage.

Abstract: A system is provided for determining a color using a CMOS image sensor. The system includes an input port for receiving a user command. The system further includes an image sensor, an optical device that forms an image on the image sensor, and a processor. The image sensor includes an n-type substrate and a p-type epitaxy layer overlying the n-type substrate. The image sensor includes a control circuit that applies a first voltage on the n-type substrate to obtain a first output. The control circuit applies a second voltage on the n-type substrate to obtain a second output. The control circuit also applies a third voltage on the n-type substrate to obtain a third output. The p-type epitaxy layer includes a silicon germanium material. The image sensor additionally includes an epitaxy layer interposed between the n-type substrate and the p-type epitaxy layer.

Abstract: A backlight device for a liquid crystal display includes a substrate, and a plurality of white, red, green, and blue light emitting diodes arranged on the substrate.

Abstract: A monolithic light-emitting device and driving method therefore includes a plurality of light-emitting diodes, array-arranged monolithically on a single substrate. The light-emitting diodes include a pn junction-containing semiconductor material and a phosphor-containing layer passing light emitted from the semiconductor material, absorbing part, or whole of the light for conversion into light having a different wavelength. The array is constituted of a light-emitting diode group consisting of m (m?2) pieces of the light-emitting diode, the light emitting diode group being constituted of N types (N?2, providing N?m) of light-emitting diodes, each having either one of preset N types of light-emitting spectrum patterns. An average light-emitting spectrum from the whole array can be changed by regulating a power supplied to the light-emitting diodes for each light-emitting diode group sorted according to the type of the light-emitting spectrum pattern.

Abstract: A LED (light emitting diode) element and a LED light thereof are revealed. The LED element includes a resin base, a LED chip embedded in the resin base and at least two leads formed by an upper part and a lower part. A top end of the upper part is mounted in the resin base and is electrically connected with the LED chip so as to make the LED chip emit light. A bottom end of the upper part extends out of the resin base and connects with a top end of the lower part. The LED element is combined with a light housing to be used. Thereby the lead will not rust easily and break due to bending. This is suitable for outdoor use, environmental protection and energy savings.

Abstract: There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes the steps of providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of ?25 to 80° C. and under a vacuum in the range of 10?6 to 1,000 Torr, for a first period of 1-100 minutes, to form a partially dried layer; and heating the partially dried layer to a temperature above 100° C. for a second period of 1-50 minutes to form a dried layer.

Abstract: An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. Yet, another embodiment relates to an image display having the nanowire-containing LED device with optical feedback.

Abstract: Light emitting chips, light emitting unit cells and methods of forming light emitting chips are provided. A light emitting chip includes a light emission structure having a p-type semiconductor layer, an n-type semiconductor layer, and an active layer therebetween. At least one light emitting unit is formed from the light emission structure including a light emitting diode (LED) and a plurality of light receiving diode (LRD) portions. The LRD portions are serially connected and configured to surround the LED portion. The LRD portions are optically coupled to the LED portion to receive total internal reflection (TIR) light from the LED portion and convert the TIR light to a photocurrent.

Abstract: A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.

Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

Abstract: A complex lens and a light-emitting device comprising a complex lens are disclosed. At least one semiconductor die is disposed on a substrate. The complex lens is created by forming a first lens comprising a clear transparent material directly on a surface of each of at least one die, and by forming an outer lens comprising a clear transparent material filled uniformly with phosphor, directly encapsulating the substrate and the at least one die with the formed first lens. The outer lens is in contact with the substrate either directly or through an intervening reflective layer of the light-emitting device.

Abstract: A system and method for sensing image on CMOS. According to an embodiment, the present invention provide a CMOS image sensing pixel. The pixel includes an n-type substrate, which includes a first width and a first thickness. The pixel also includes a p-type epitaxy layer overlying the n-type substrate. The p-type epitaxy layer includes a second width and a second thickness. The second width is associated with one or more characteristics of a colored light. The pixel additionally includes an n-type layer overlying the p-type epitaxy layer. The n-type layer is associated with a third width and a third thickness. Additionally, the pixel includes an pn junction formed between the p-type epitaxy layer and the n-type layer. Moreover, the pixel includes a control circuit being coupled to the CMOS image sensing pixel.

Abstract: An electronic device according to the invention includes a housing, a recess containing an optoelectronic component, and a film including a polyimide, which is over the recess covering the optoelectronic component.

Abstract: Disclosed is a light emitting device having vertically stacked light emitting diodes. It comprises a lower semiconductor layer of a first conductive type positioned on a substrate, a semiconductor layer of a second conductive type on the lower semiconductor layer of a first conductive type, and an upper semiconductor layer of a first conductive type on the semiconductor layer of a second conductive type. Furthermore, a lower active layer is interposed between the lower semiconductor layer of a first conductive type and the semiconductor layer of a second conductive type, and an upper active layer is interposed between the semiconductor layer of a second conductive type and the upper semiconductor layer of a first conductive type. Accordingly, there is provided a light emitting device having a structure in which a lower light emitting diode comprising the lower active layer and an upper light emitting diode comprising the upper active layer are vertically stacked.

Abstract: In accordance with the invention, a light source for display and/or illumination is provided, the light source comprising a heterostructure including semiconductor layers, the heterostructure forming a waveguide between a first end and a second end, the heterostructure comprising a plurality of layers and comprising an optically active zone formed by the plurality of layers, the optically active zone capable of emitting light guided by said waveguide, at least two different radiative transitions being excitable in the optically active an electrical current between a p-side electrode and an n-side electrode, transition energies of said at least two different radiative transitions corresponding to wavelengths in the visible part of the optical spectrum, the light source further comprising means for preventing reflections of light from the waveguide by at least one of said first and second end back into the waveguide, thereby causing the light source to comprise a superluminescent light emitting diode.

Abstract: The light emitting device of the invention comprises a first electrode, a second electrode being light transmitting, and a carrier sandwiched between the first electrode and the second electrode and containing light emitters, wherein the first electrode has a plurality of projections or a pn junction formed with a p-type semiconductor and an n-type semiconductor each on a surface being in contact with the carrier.

Abstract: The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.

Abstract: This pn-junction compound semiconductor light-emitting device includes a crystal substrate; an n-type light-emitting layer formed of a hexagonal n-type Group III nitride semiconductor and provided on the crystal substrate; a p-type Group III nitride semiconductor layer formed of a hexagonal p-type Group III nitride semiconductor and provided on the n-type light-emitting layer; a p-type boron-phosphide-based semiconductor layer having a sphalerite crystal type and provided on the p-type Group III nitride semiconductor layer; and a thin-film layer composed of an undoped hexagonal Group III nitride semiconductor formed on the p-type Group III nitride semiconductor layer, wherein the p-type boron-phosphide-based semiconductor layer is joined to the thin-film layer composed of an undoped hexagonal Group III nitride semiconductor.

Abstract: A light emitting diode (LED) structure, a manufacturing method thereof and a LED module are provided. The LED structure has temperature sensing function. The LED structure comprises a composite substrate and an LED. The composite substrate comprises a diode structure whose P-type semiconductor region or N-type semiconductor region has a predetermined doping concentration. The diode structure is a temperature sensor, and the sensitivity of the temperature sensor is based on the predetermined doping concentration. The LED is disposed on the composite substrate. The diode structure is used for sensing the heat emitted from the LED.

Abstract: A high power light emitting device assembly with electro-static-discharge (ESD) protection ability and the method of manufacturing the same, the assembly comprising: at least two sub-mounts, respectively being electrically connected to an anode electrode and a cathode electrode, each being made of a metal of high electric conductivity and high thermal conductivity; a light emitting device, arranged on the sub-mounts; and an ESD protection die, sandwiched and glued between the sub-mounts, for enabling the high-power operating light emitting device to have good heat dissipating path while preventing the same to be damaged by transient power overload of static surge.

Abstract: A light-emitting device has a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate, the latter being sufficiently electroconductive to provide part of the current path through the device. Constituting the primary working part of the LED, the main semiconductor region comprises an n-type GaN layer, an active layer, and a p-type GaN layer, which are successively epitaxially grown in that order on the buffer region. A heterojunction is created between p-type substrate and n-type buffer region. Carrier transportation from substrate to buffer region is expedited by the interface levels of the heterojunction, with a consequent reduction of the drive voltage requirement of the LED.

Abstract: A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the buffer region is the main semiconductor region of the LED which comprises a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. In the course of the growth of the buffer region and main semiconductor region there occurs a thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate, with the consequent creation of a p-type low-resistance region in the substrate. Interface levels are created across the heterojunction between p-type silicon substrate and n-type buffer region.

Abstract: A light emitting diode and a method of the same are provided. The light emitting diode includes a substrate with a first region and a second region, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The light emitting diode further includes a plurality of vias, a first metal layer, a second metal layer, and a patterned passivation layer interposed between the second semiconductor layer and the first metal layer. The plurality of vias are located in the first region and penetrate through the second semiconductor layer and the light-emitting layer to expose part of the first semiconductor layer. The first metal layer is located in the first region, and electrically contacted with the first semiconductor layer through the plurality of vias. The second metal layer is located in the second region, and electrically contacted with the second semiconductor layer and electrically insulated from the first metal layer.

Abstract: A portable electronic device includes a shell, a powering circuit, and solar cell. The shell includes a transparent section. The powering circuit is fixed in the shell and located facing the transparent section. The solar cell is connected to the powering circuit. When exterior light irradiates the transparent section, the solar cell converts the absorbed light into electrical voltage which is supplied to the portable electronic device to power functions thereof.

Abstract: The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced.

Abstract: An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device.

Abstract: A semiconductor device is disclosed.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal conductivity higher than that of a sapphire substrate. The plurality of light emitting cells are connected in series on the thermally conductive substrate. Meanwhile, a semi-insulating buffer layer is interposed between the thermally conductive substrate and the light emitting cells. For example, the semi-insulating buffer layer may be formed of AlN or semi-insulating GaN. Since the thermally conductive substrate having a thermal conductivity higher than that of a sapphire substrate is employed, heat-dissipating performance can be enhanced as compared with a conventional sapphire substrate, thereby increasing the maximum light output of a light emitting device that is driven under a high voltage AC power source.

Abstract: A light-emitting diode includes a sapphire substrate, an n-type semiconductor, a light-emitting layer, a p-type semiconductor layer, an anode and a conductive material. The n-type semiconductor layer is formed on the sapphire substrate and has a side surface, a center section and an edge around the center portion. The light-emitting layer is formed on the n-type semiconductor layer. The p-type semiconductor layer is formed on the light-emitting layer. The anode is formed on the p-type semiconductor layer. The conductive material is formed on the bottom surface of the sapphire substrate and is in contact with the n-type semiconductor layer.

Abstract: A monolithic light-emitting device and driving method therefore includes a plurality of light-emitting diodes, array-arranged monolithically on a single substrate. Thie light-emitting diodes include a pn junction-containing semiconductor material and a phosphor-containing layer passing light emitted from the semiconductor material, absorbing part, or whole of the light for conversion into light having a different wavelength. The array is constituted of a light-emitting diode group consisting of m (m?2) pieces of the light-emitting diode, the light emitting diode group being constituted of N types (N?2, providing N?m) of light-emitting diodes, each having either one of preset N types of light-emitting spectrum patterns. An average light-emitting spectrum from the whole array can be changed by regulating a power supplied to the light-emitting diodes for each light-emitting diode group sorted according to the type of the light-emitting spectrum pattern.

Abstract: A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.