Abstract: A semiconductor wafer comprises an SOI comprising a device layer on an oxide layer supported on a handle layer. Micro-mirrors are formed in the device layer, and access bores extend through the handle layer and the oxide layer to the micro-mirrors for accommodating optical fibers to the micro-mirrors. The access bores are accurately aligned with the micro-mirrors, and the access bores are accurately formed of circular cross-section. Each access bore comprises a tapered lead-in portion extending to a parallel portion. The diameter of the parallel portion is selected so that the optical fibers are a tight fit therein for securing the optical fibers in alignment with the micro-mirrors. The tapered lead-in portions of the access bores are formed to a first depth by a first dry isotropic etch for accurately forming the taper and the circular cross-section of the tapered lead-in portions.

Abstract: A bare die semiconductor device, e.g., a bare die LED, includes a substrate having a bottom face and a bottom die electrode. There is also a top face having a top face edge, a top face area, a top face periphery and a top die electrode. A semiconductor material provides a p-n semiconductor junction between the top and bottom faces. The top die electrode inhibits an external top planar electrode from contact with the top face edges. Such bare die LEDs can be incorporated into a light sheet that has a transparent first substrate having a planar top electrode and a second substrate having a bottom substrate electrode. An adhesive secures the second substrate to the first substrate. Bare die LEDs are disposed in the adhesive with their top die electrodes contacting the top planar electrode and their bottom die electrodes contacting the bottom substrate electrode.

Abstract: An LED component according to the present invention comprising an array of LED chips mounted on a submount with the LED chips capable of emitting light in response to an electrical signal. The array can comprise LED chips emitting at two colors of light wherein the LED component emits light comprising the combination of the two colors of light. A single lens is included over the array of LED chips. The LED chip array can emit light of greater than 800 lumens with a drive current of less than 150 milli-Amps. The LED chip component can also operate at temperatures less than 3000 degrees K. In one embodiment, the LED array is in a substantially circular pattern on the submount.

Abstract: Light emitting devices include a semiconductor light emitting diode that is configured to operate at a substantially droop-free quantum efficiency while producing warm white light output of at least about 100 lumens/cool white light output of at least about 130 lumens. The semiconductor light emitting diode may include a single semiconductor die of at least about 4 mm2 in area that operates at a current density of less than about 9 A/cm2, so as to operate at the substantially droop-free quantum efficiency. Related fabricating and operating methods are also disclosed.

Abstract: A light-emitting device includes a substrate having first and second opposing surfaces, an active region on the first surface of the substrate, a via in the substrate between the first and second opposing surfaces, a contact plug in the via, a first electrical contact on the active region, and a second electrical contact adjacent to the second surface that is coupled to the active region by the contact plug. The via and the first electrical contact are offset with respect to each other relative to an axis that is substantially perpendicular to the first and second surfaces of the substrate.

Abstract: A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of the semiconductor substrate of the first conductivity type, a semiconductor substrate of a second conductivity type, and a second electrode which is disposed a surface of the semiconductor substrate of the second conductivity type, at least one of the semiconductor substrate of the first conductivity type and the semiconductor substrate of the second conductivity type having an interstice located near an outer side surface on a side close to the light-emitting layer forming portion and around a joined surface on a principal surface of the light-emitting layer forming portion.

Abstract: Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.

Abstract: A semiconductor device is disclosed.

Abstract: There is provided a light emitting device that can reduce the size of a light emitting device module by using a more simplified light emitting device that directly uses an alternating current source, prevent a decrease in luminous efficiency that is caused due to the use of a separate driving device, solve a problem with an ohmic contact of a p-type electrode, reduce the number of electrodes, and secure a larger area of light emission.

Abstract: The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: A transparent lighting system for a conveyance includes a transparent light active sheet material and an adhesive disposed on the transparent light active sheet material. The transparent light active sheet material includes top and bottom electrically conductive transparent substrates, a pattern of light emitting diode (LED) chips sandwiched between the electrically conductive transparent substrates, and a non-conductive transparent adhesive material disposed between the top and bottom electrically conductive transparent substrates and the LED chips. The LED chips are preformed before being patterned in the light active sheet material as an unpackaged discrete semiconductor device having an anode p-junction side and a cathode n-junction side.

Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.