Abstract: The present disclosure provides an array substrate and a display panel including the same. The array substrate includes a plurality of pixel units. Each of the pixel units includes a main pixel electrode, a sub-pixel electrode, a first thin film transistor (TFT) electrically connected to the sub-pixel electrode, a second TFT electrically connected to the first TFT, and a third TFT electrically connected to the main pixel electrode. The first TFT includes a first channel and a first semiconductor layer. The first channel includes two or more subchannels. The first semiconductor layer includes two or more semiconductor sublayers. Each of the semiconductor sublayers is disposed in a corresponding subchannel.

Abstract: Provided are an array substrate, a display panel, and a display device. The array substrate includes a base substrate, a thin-film transistor disposed on one side of the base substrate, a pixel electrode, and at least two color resist layers disposed between the TFT and the pixel electrode. A medium layer is disposed between any two adjacent color resist layers. The pixel electrode is electrically connected to a first electrode of the thin-film transistor through a via.

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 ?m and less than or equal to 3 ?m is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

Abstract: A method of making a glass includes batching constituents, including silica, alumina, boria, magnesia, quicklime, and strontia, where one or more of the constituents is from “dirty” raw material that includes a relatively large amount of sulfur. The method further includes melting and mixing the batch to make glass having sulfur content but free of blisters, suitable for high performance displays.

Abstract: An image sensing device is provided to include a pixel array of unit pixels, each pixel structured to respond to incident light to produce photocharges and including different photosensing sub-pixels at different locations within the unit pixel to detect incident light, different detection structures formed at peripheral locations of the different photosensing sub-pixels of the unit pixel, respectively, and configured to receive the photocharges that are generated by the different photosensing sub-pixels of and are carried by a current in the unit pixel, a unit pixel voltage node located at a center portion of the unit pixel and electrically coupled to electrically bias an electrical potential of the different photosensing sub-pixels, and a control circuit coupled to the different detection structures of the unit pixel to supply sub-pixel detection control signals to the different detection structures of the unit pixel, respectively.

Abstract: A display panel and a display device are provided. The display panel includes a plurality of light emitting points; a plurality of pixel driving circuits, wherein at least one of the plurality of light emitting points is connected to at least one of the plurality of pixel driving circuits; and a plurality of electrode leads, the at least one of the plurality of light emitting points is connected to the at least one of the plurality of pixel driving circuits through at least one of the plurality of electrode leads; the plurality of pixel driving circuits are separated from the plurality of light emitting points.

Abstract: A display panel includes a first substrate; a scan line and a data line disposed on the first substrate and extending in a first direction and a second direction, respectively, wherein the data line intersects the scan line; a polysilicon layer disposed on the first substrate. In a top view, the polysilicon layer includes: a first channel region overlapping a portion of the scan line; a second channel region overlapping another portion of the scan line; a non-channel region not overlapping the scan line and connected between the first channel region and the second channel region; a long region extended in the second direction; wherein a portion of the non-channel region extends in the first direction, the portion has a first width in the second direction, the long region has a second width in the first direction, and the first width is greater than the second width.

Abstract: An electro-optical device including a first substrate and a transistor is provided. The first substrate includes a first scanning line having a light shielding property and extending in a first direction between a substrate body and a pixel electrode. The transistor includes a semiconductor film extending in the first direction to overlap with the first scanning line in a layer between the first scanning line and the pixel electrode. In a layer between a gate electrode and a pixel electrode, a second scanning line having a light shielding property extends in the first direction to overlap with the first scanning line in plan view. The second scanning line extends through a position spaced apart from a third contact portion that electrically couples the pixel electrode and the semiconductor film, and is electrically coupled to the gate electrode and the first scanning line.

Abstract: A display device includes: first and second substrates; adjacent first and second color filter layers between the first and second substrates and having a first color; adjacent third and fourth color filter layers between the first and second substrates and having a second color; first and second dummy color filter layers between the first color filter layer and the second color filter layer and having the first and second colors, respectively; a first column spacer between the first dummy color filter layer and the second substrate; and a second column spacer between the second dummy color filter layer and the second substrate. The first dummy color filter has a greater height than the second dummy color filter layer. A surface of the first dummy color filter layer facing the second substrate is larger than that of the second dummy color filter layer.

Abstract: A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.

Abstract: A buried semiconductor optical device comprises a semiconductor substrate; a mesa-stripe portion including a multi-quantum well layer on the semiconductor substrate; a buried layer consisting of a first portion and a second portion, the first portion covering one side of the mesa-stripe portion, the second portion covering the other side of the mesa-stripe portion, and the first portion and the second portion covering a surface of the semiconductor substrate; and an electrode configured to cause an electric current to flow through the mesa-stripe portion, the buried layer comprising, from the surface, a first, second, and third sublayer, the first and third sublayer each consisting of semi-insulating InP, the first sublayer and the second sublayer forming a pair structure, the second sublayer being located above the multi-quantum well layer, and the second sublayer consisting of one or more layers selected from InGaAs, InAlAs, InGaAlAs, InGaAsP, and InAlAsP.

Abstract: The present disclosure provides a touch substrate, a manufacturing method thereof and a touch display device. The touch substrate includes: a base substrate; a touch area on the base substrate; a touch electrode made of nano-silver, the touch electrode including first touch electrodes and second touch electrodes, a first insulating layer located on a side of the touch electrode away from a center of the base substrate, a touch electrode bridge on the first insulating layer, the touch electrode bridge connecting adjacent first touch electrodes and/or adjacent second electrodes by way of a first through-hole penetrating the first insulating layer. An etching liquid applied to the touch electrode bridge is different from the etching liquid applied to the nano-silver. The technical solution of the present disclosure can realize a flexible touch substrate by using nano-silver and a photolithography process.

Abstract: A light emitting device including a substrate having a first surface and a second surface opposing the first surface, a light emitting structure disposed on the first surface of the substrate and defining a light emitting area, and a first light shielding layer disposed on the second surface of the substrate and exposing at least a portion of the light emitting area, in which the second surface of the substrate has a rough surface that overlaps at least a portion the light emitting area.

Abstract: Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer.

Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

Abstract: A display panel includes a TFT substrate, an opposite substrate and a display layer. A TFT of the TFT substrate has a drain. A first insulating layer has a first sub-layer and a second sub-layer disposed on the drain sequentially. The first sub-layer has a first opening with a first width. The second sub-layer has a second opening with a second width on the first opening. The first and second openings form a first via, and the second width is greater than the first width. A passivation layer is disposed on the first insulating layer. A second insulating layer is disposed on the passivation layer. A pixel electrode layer is disposed on the second insulating layer and disposed in the first via to connect the drain. The display layer is disposed between the TFT substrate and the opposite substrate.

Abstract: An organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes an organic light-emitting device in which a pixel electrode, an intermediate layer that includes an emissive layer, and a cathode electrode are sequentially stacked. The cathode contact unit includes a cathode bus line that is formed on the same layer as the pixel electrode and contacts the cathode electrode, a first auxiliary electrode that is formed on the cathode bus line along an edge area of the cathode bus line, and a second auxiliary electrode that contacts the first auxiliary electrode.

Abstract: There is provided a pixel structure of a liquid crystal panel including a transparent substrate, and a gate line, a data line, a switching transistor, a first electrode, a second electrode and a shield layer formed on the transparent substrate. The gate line is substantially perpendicular to the data line. The switching transistor is located adjacent to a crossing point of the gate line and the data line, and is configured to input a display voltage of the data line to the second electrode according to the control of the gate line. The first electrode and the second electrode are arranged in such a way that the display voltage forms a transverse electric field between the first electrode and the second electrode. The shield layer overlaps at least a part of the gate and is electrically isolated from the first electrode and the second electrode.

Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.

Abstract: A semiconductor device includes first and second conductive layers over an insulating surface, a first insulating layer over the first and second conductive layers, first and second oxide semiconductor layers over the first insulating layer, third and fourth conductive layers over the first oxide semiconductor layer, a second insulating layer over the third and fourth conductive layers, and a fifth conductive layer over the second insulating layer. In the semiconductor device, the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer, the first oxide semiconductor layer has a region overlapping with the first conductive layer, the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, and the second oxide semiconductor layer has a region intersecting with the second conductive layer.

Abstract: Carbon-based light emitting diodes (LEDs) and techniques for the fabrication thereof are provided. In one aspect, a LED is provided. The LED includes a substrate; an insulator layer on the substrate; a first bottom gate and a second bottom gate embedded in the insulator layer; a gate dielectric on the first bottom gate and the second bottom gate; a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED; and metal source and drain contacts to the carbon material.

Abstract: Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

Abstract: Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al2O3) layer as a protective film and an aluminum (Al) layer in this order on any of the source/drain electrode, the gate insulating film, and the oxide semiconductor layer by using sputtering.

Abstract: Embodiments of the present invention disclose a thin film transistor array substrate and a method for manufacturing the same and an electronic device.

Abstract: A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer on the gate insulating film; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; and a power supply line in a same layer as the gate line and adjacent to the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the second electrode and the power supply line are electrically connected via a second conductive portion.

Abstract: The present invention relates to methods for fabricating a thin film transistor substrate.

Abstract: A method of fabricating an array substrate for an organic electroluminescent display device includes forming a semiconductor layer, a semiconductor dummy pattern, a first storage electrode and a first gate insulating layer on a substrate; forming a second gate insulating layer on the semiconductor layer and the first storage electrode; forming a gate electrode and a second storage electrode on the second gate insulating layer; forming ohmic contact layers by doping impurities into both sides of the semiconductor layer; forming an inter insulating layer on the gate electrode and the second storage electrode; forming source and drain electrodes and a third storage electrode on the inter insulating layer; forming a passivation layer on the source and drain electrodes and the third storage electrode; forming a first electrode and a fourth storage electrode on the passivation layer; and forming a spacer and a bank on the first electrode.

Abstract: A thin film transistor (TFT) having an active layer pattern, the active layer pattern including a first active layer pattern extending in a first direction; a second active layer pattern extending in the first direction and parallel to the first active layer pattern; and a third active layer pattern connecting a first end of the first active layer pattern to a first end of the second active layer pattern.

Abstract: Embodiments of the disclosed technology provide a transflective transistor thin film array substrate and a method for manufacturing the same. The transflective thin film transistor array substrate, comprising pixel units defined by gate lines and data lines, and each pixel unit comprises a thin film transistor and a common electrode and is divided into a reflective region and a transmissive region. The reflective region comprises a reflective electrode and a second pixel electrode of the reflective region, the transmissive region comprises first and second pixel electrodes of the transmissive region, and the second pixel electrode of the reflective region and the first and second pixel electrodes of the transmissive region are provided in one pixel electrode layer.

Abstract: An organic light-emitting display apparatus is disclosed. In one embodiment, the display apparatus includes i) a substrate and ii) an organic light-emitting device formed on the substrate, the organic light-emitting device including a stack structure including a first electrode, an organic light-emitting layer, and a second electrode. The apparatus may further include a sealing layer formed on the substrate so as to cover the organic light-emitting device, the sealing layer including an inorganic layer and a porous layer interposed between the sealing layer and the organic light-emitting device. One embodiment can reduce a stress due to a sealing inorganic layer so as to maintain characteristics for a long time in a severe environment and not affect an organic light-emitting device.

Abstract: The present invention relates to a display device and a manufacturing method thereof. A display device according to an exemplary embodiment of the present invention includes a substrate including a first surface and a second surface, a first line disposed on the first surface and made of a transparent metal oxide semiconductor, and a first semiconductor disposed on the first surface and made of the transparent metal oxide semiconductor.

Abstract: The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

Abstract: The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT, so as to save the process cost. Further, the source electrode and drain electrode of the TFT are also manufactured with poly-silicon rather than metal material used in prior art, processing steps are simplified, thereby further saving the process cost.

Abstract: Provided is a TFT board for a liquid crystal display device including: a circuit layer formed on a substrate, the circuit layer including a thin film transistor including a semiconductor layer, a gate electrode, a drain electrode, and a source electrode; and a color filter layer formed on the circuit layer. The color filter layer has a through hole formed therein above the semiconductor layer in a region between the source electrode and the drain electrode.

Abstract: A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.

Abstract: A method of manufacturing an organic light-emitting element. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer, the banks defining apertures corresponding to light-emitters, the resin material being the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are then degraded by applying electrical power to an element structure.

Abstract: A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel electrode formed on the first insulating layer using a transparent conductive material, an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer, a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode, and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap.

Abstract: An organic EL device as a light emitting device includes: a first light emitting element that is disposed on a first surface of a substrate and that has a first pixel electrode; a second light emitting element that has a second pixel electrode; and an insulating layer that is provided with a first opening which exposes the first pixel electrode and a second opening which exposes the second pixel electrode. Further, in the organic EL device, the first opening is configured so that the insulating layer covers equal to or more than 50% of the circumferential edge portion of the first pixel electrode, and the second opening is configured so that the insulating layer covers less than 50% of the circumferential edge portion of the second pixel electrode.

Abstract: A liquid crystal display device with a built-in touch screen, which uses a common electrode as a touch-sensing electrode including an intersection of a gate line and a data line to define a pixel region, a bridge line disposed in a central portion of the pixel, an insulating layer formed on the bridge line, a first contact hole disposed through the insulating layer to expose a predetermined portion of an upper surface of the bridge line, a contact metal on the insulating layer and inside the first contact hole, the contact metal electrically connected with the bridge line, a first passivation layer on the contact metal, a second contact hole disposed through the first passivation layer to expose a predetermined portion of an upper surface of the contact metal, a common electrode on the first passivation layer and inside the second contact hole, a conductive line electrically connected with the common electrode, and a second passivation layer on the first passivation layer and the conductive line, wherein the

Abstract: A substrate includes a storage line, first and second gate lines and first and second pixel electrodes. The storage line extends along a first direction on the substrate. The first and second gate lines are substantially parallel with the storage line. The first pixel electrode is formed between the first gate line and the storage line. The second pixel electrode is formed between the second gate line and the storage line.

Abstract: A crystal silicon film forming method according to the present invention includes: forming a metal film; forming an insulating film on the metal film, and forming a crystal silicon film made of polycrystal Si on the insulating film. In the forming of an insulating film, the insulating film is formed within a film thickness range of 160 nm to 190 nm. The forming of a crystal silicon film includes forming an amorphous silicon film made of a-Si on the insulating film, within a film thickness range of 30 nm to 45 nm, and forming the crystal silicon film from the amorphous silicon film by irradiating the amorphous silicon film with a light of a green laser.

Abstract: A semiconductor device (18) includes: a gate electrode (102) formed on a substrate (101); a semiconductor layer (104) formed above the gate electrode (102) and including a source region, a drain region, and a channel region; a source electrode (106) connected to the source region above the semiconductor layer (104); and a drain electrode (107) connected to the drain region above the semiconductor layer (104). The semiconductor layer (104) has, at a portion overlapping the drain electrode (107), a protrusion that protrudes outward along an extending direction of a drain line drawn out from the drain electrode (107). At an outside of the channel region sandwiched between the drain electrode (107) and the source electrode (106), the semiconductor layer (104) has an adjustment portion where an outer boundary of the semiconductor layer (104) is positioned more inward than an outer boundary of the gate electrode (102).

Abstract: A display substrate includes a base substrate, color filter layers, a bottom supporting layer and a light-blocking and maintaining element. The base substrate includes a gate line, a data line crossing the gate line, and a switching element on the base substrate. The color filter layers are adjacent to each other on the base substrate. The bottom supporting layer is between the color filter layers adjacent to each other and on the base substrate. The light-blocking and maintaining element is between the color filter layers adjacent to each other, and on the bottom supporting layer. The light-blocking and maintaining element includes a light blocking portion, and a maintaining portion which overlaps the bottom supporting layer and protrudes from the light blocking portion.

Abstract: An array substrate structure of a display panel includes a substrate, a plurality of first wirings, a first patterned insulating layer, a plurality of second wirings, a plurality of first protective patterns, and a plurality of second protective patterns. The substrate has a wiring region. The first wirings are disposed in the wiring region. The first patterned insulating layer is disposed on the first wirings. The second wirings are disposed on the first patterned insulating layer. The first protective patterns are disposed in the wiring region and disposed on the corresponding second wiring, respectively, where the first protective pattern includes a semiconductor material. The second protective patterns are disposed on the corresponding first protective pattern, respectively, where the second protective pattern includes an inorganic insulating material.

Abstract: An OLED device includes: a TFT including an active layer, gate, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the source and drain electrodes, a pixel electrode on the first and second insulating layers, connected to one of the source and drain electrodes, a capacitor including a first electrode on the same layer as the active layer, a second electrode on the same layer as the gate electrode, and a third electrode formed of the same material as the pixel electrode, a third insulating layer between the second insulating layer and the pixel electrode and between the second and third electrodes, a fourth insulating layer covering the source, drain and third electrodes, exposing a portion of the pixel electrode, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.

Abstract: In an IPS type liquid crystal display device having a reduced number of layers and formed through a reduced number of photolithography steps, an off current of a TFT is prevented from increasing due to photocurrent. A drain line, a TFT drain electrode, and a source electrode each have a multilayer structure including metal and a semiconductor layer. The drain line and the semiconductor layer formed thereunder are separated from the drain electrode and the semiconductor layer formed thereunder with the drain line and the drain electrode connected by a blocking conductive film formed of ITO of which the pixel electrode is also formed. Photocurrent generated by backlight is blocked by the blocking conductive film without flowing into the TFT. Therefore, the number of photomasks required in the production process can be decreased without an increase of causing the off current of the TFT.

Abstract: An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110, a base insulating film 112 over the lower support 110 which has a through-hole 130, a light-emitting element 127 over the base insulating film 112, and an upper support 122 over the light-emitting element 127. An electrode 131 is provided in the through-hole 130, and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112. The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.

Abstract: A light emitting device (10) comprises a body (12) of a semiconductor material. A first junction region (14) is formed in the body between a first region (12.1) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction region (16) is formed in the body between the second region (12.2) of the body and a third region (12.3) of the body of the first doping kind. A terminal arrangement (18) is connected to the body for, in use, reverse biasing the first junction region (14) into a breakdown mode and for forward biasing at least part (16.1) of the second junction region (16), to inject carriers towards the first junction region (14). The device (10) is configured so that a first depletion region (20) associated with the reverse biased first junction region (14) punches through to a second depletion region associated with the forward biased second junction region (16).

Abstract: A thin film transistor (“TFT”) array panel is provided. The TFT array panel includes an insulation substrate, a gate line formed on the insulation substrate and including a gate electrode, a data line insulated from and intersecting the gate line, and including a source electrode, a drain electrode opposite to the source electrode on the gate line, and a semiconductor formed in a layer between the data line and the gate line, and having a protruding portion extending below the drain electrode, wherein a portion of the semiconductor extending towards the drain electrode, from an area occupied by the data line, is positioned within an occupying area of the gate line including the gate electrode.