Characterized By Field-effect Operation (epo) Patents (Class 257/E33.053)
  • Patent number: 10038012
    Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: July 31, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yumiko Ohno, Shunpei Yamazaki
  • Patent number: 9312287
    Abstract: A display panel includes a TFT substrate, an opposite substrate and a display layer. A TFT of the TFT substrate has a drain. A first insulating layer has a first sub-layer and a second sub-layer disposed on the drain sequentially. The first sub-layer has a first opening with a first width. The second sub-layer has a second opening with a second width on the first opening. The first and second openings form a first via, and the second width is greater than the first width. A passivation layer is disposed on the first insulating layer. A second insulating layer is disposed on the passivation layer. A pixel electrode layer is disposed on the second insulating layer and disposed in the first via to connect the drain. The display layer is disposed between the TFT substrate and the opposite substrate.
    Type: Grant
    Filed: February 18, 2015
    Date of Patent: April 12, 2016
    Assignee: InnoLux Corporation
    Inventors: Kuan-Feng Lee, Hui-Chieh Wang
  • Patent number: 9040993
    Abstract: An organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes an organic light-emitting device in which a pixel electrode, an intermediate layer that includes an emissive layer, and a cathode electrode are sequentially stacked. The cathode contact unit includes a cathode bus line that is formed on the same layer as the pixel electrode and contacts the cathode electrode, a first auxiliary electrode that is formed on the cathode bus line along an edge area of the cathode bus line, and a second auxiliary electrode that contacts the first auxiliary electrode.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: May 26, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Chun-Gi You, Joon-Hoo Choi
  • Patent number: 9029876
    Abstract: There is provided a pixel structure of a liquid crystal panel including a transparent substrate, and a gate line, a data line, a switching transistor, a first electrode, a second electrode and a shield layer formed on the transparent substrate. The gate line is substantially perpendicular to the data line. The switching transistor is located adjacent to a crossing point of the gate line and the data line, and is configured to input a display voltage of the data line to the second electrode according to the control of the gate line. The first electrode and the second electrode are arranged in such a way that the display voltage forms a transverse electric field between the first electrode and the second electrode. The shield layer overlaps at least a part of the gate and is electrically isolated from the first electrode and the second electrode.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: May 12, 2015
    Assignee: Hannstar Display Corp.
    Inventors: Chia Hua Yu, I Fang Wang, Feng Weei Kuo, Jui Chi Lai, Ko Ruey Jen, Guang Shiung Chao
  • Patent number: 8994086
    Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: March 31, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroko Abe, Yukie Nemoto, Ryoji Nomura, Mikio Yukawa
  • Patent number: 8933563
    Abstract: A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: January 13, 2015
    Assignee: E Ink Holdings Inc.
    Inventors: Wei-Chou Lan, Ted-Hong Shinn, Henry Wang, Chia-Chun Yeh
  • Patent number: 8927985
    Abstract: A semiconductor device includes first and second conductive layers over an insulating surface, a first insulating layer over the first and second conductive layers, first and second oxide semiconductor layers over the first insulating layer, third and fourth conductive layers over the first oxide semiconductor layer, a second insulating layer over the third and fourth conductive layers, and a fifth conductive layer over the second insulating layer. In the semiconductor device, the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer, the first oxide semiconductor layer has a region overlapping with the first conductive layer, the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, and the second oxide semiconductor layer has a region intersecting with the second conductive layer.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: January 6, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hideki Matsukura
  • Patent number: 8916405
    Abstract: Carbon-based light emitting diodes (LEDs) and techniques for the fabrication thereof are provided. In one aspect, a LED is provided. The LED includes a substrate; an insulator layer on the substrate; a first bottom gate and a second bottom gate embedded in the insulator layer; a gate dielectric on the first bottom gate and the second bottom gate; a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED; and metal source and drain contacts to the carbon material.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: December 23, 2014
    Assignee: International Business Machines Corporation
    Inventors: Dechao Guo, Shu-Jen Han, Keith Kwong Hon Wong, Jun Yuan
  • Patent number: 8912544
    Abstract: Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: December 16, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kaoru Hatano
  • Patent number: 8906738
    Abstract: Disclosed herein is a method of manufacturing a thin film transistor having a structure that a gate electrode and an oxide semiconductor layer are disposed with a gate insulating film interposed between the gate electrode and the oxide semiconductor layer, and a source/drain electrode is electrically connected to the oxide semiconductor layer, the method including: continuously depositing an aluminum oxide (Al2O3) layer as a protective film and an aluminum (Al) layer in this order on any of the source/drain electrode, the gate insulating film, and the oxide semiconductor layer by using sputtering.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: December 9, 2014
    Assignee: Sony Corporation
    Inventors: Takahide Ishii, Yoshihiro Oshima
  • Patent number: 8895989
    Abstract: A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer on the gate insulating film; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; and a power supply line in a same layer as the gate line and adjacent to the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the second electrode and the power supply line are electrically connected via a second conductive portion.
    Type: Grant
    Filed: November 27, 2012
    Date of Patent: November 25, 2014
    Assignee: Panasonic Corporation
    Inventor: Arinobu Kanegae
  • Patent number: 8895334
    Abstract: Embodiments of the present invention disclose a thin film transistor array substrate and a method for manufacturing the same and an electronic device.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: November 25, 2014
    Assignee: Boe Technology Group Co., Ltd.
    Inventors: Xiang Liu, Jianshe Xue
  • Patent number: 8890161
    Abstract: The present invention relates to methods for fabricating a thin film transistor substrate.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: November 18, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Hee-Young Kwack, Mun Gi Park
  • Patent number: 8883579
    Abstract: A method of fabricating an array substrate for an organic electroluminescent display device includes forming a semiconductor layer, a semiconductor dummy pattern, a first storage electrode and a first gate insulating layer on a substrate; forming a second gate insulating layer on the semiconductor layer and the first storage electrode; forming a gate electrode and a second storage electrode on the second gate insulating layer; forming ohmic contact layers by doping impurities into both sides of the semiconductor layer; forming an inter insulating layer on the gate electrode and the second storage electrode; forming source and drain electrodes and a third storage electrode on the inter insulating layer; forming a passivation layer on the source and drain electrodes and the third storage electrode; forming a first electrode and a fourth storage electrode on the passivation layer; and forming a spacer and a bank on the first electrode.
    Type: Grant
    Filed: October 31, 2011
    Date of Patent: November 11, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Hee-Dong Choi, Jin-Chae Jeon, Seung-Joon Jeon, Hoe-Yong Kim
  • Patent number: 8884292
    Abstract: Embodiments of the disclosed technology provide a transflective transistor thin film array substrate and a method for manufacturing the same. The transflective thin film transistor array substrate, comprising pixel units defined by gate lines and data lines, and each pixel unit comprises a thin film transistor and a common electrode and is divided into a reflective region and a transmissive region. The reflective region comprises a reflective electrode and a second pixel electrode of the reflective region, the transmissive region comprises first and second pixel electrodes of the transmissive region, and the second pixel electrode of the reflective region and the first and second pixel electrodes of the transmissive region are provided in one pixel electrode layer.
    Type: Grant
    Filed: December 28, 2011
    Date of Patent: November 11, 2014
    Assignees: Boe Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Rongge Sun, Xiujian Zhu, Guangyan Tian
  • Patent number: 8884295
    Abstract: A thin film transistor (TFT) having an active layer pattern, the active layer pattern including a first active layer pattern extending in a first direction; a second active layer pattern extending in the first direction and parallel to the first active layer pattern; and a third active layer pattern connecting a first end of the first active layer pattern to a first end of the second active layer pattern.
    Type: Grant
    Filed: May 2, 2012
    Date of Patent: November 11, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byoung-Kwon Choo, Hyun-Been Hwang, Kwon-Hyung Lee, Cheol-Ho Park
  • Patent number: 8878201
    Abstract: An organic light-emitting display apparatus is disclosed. In one embodiment, the display apparatus includes i) a substrate and ii) an organic light-emitting device formed on the substrate, the organic light-emitting device including a stack structure including a first electrode, an organic light-emitting layer, and a second electrode. The apparatus may further include a sealing layer formed on the substrate so as to cover the organic light-emitting device, the sealing layer including an inorganic layer and a porous layer interposed between the sealing layer and the organic light-emitting device. One embodiment can reduce a stress due to a sealing inorganic layer so as to maintain characteristics for a long time in a severe environment and not affect an organic light-emitting device.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: November 4, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Min-Ho Oh, Yoon-Hyeung Cho, Byoung-Duk Lee, Yong-Tak Kim, So-Young Lee, Yun-Ah Chung
  • Patent number: 8866142
    Abstract: The present invention relates to a display device and a manufacturing method thereof. A display device according to an exemplary embodiment of the present invention includes a substrate including a first surface and a second surface, a first line disposed on the first surface and made of a transparent metal oxide semiconductor, and a first semiconductor disposed on the first surface and made of the transparent metal oxide semiconductor.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: October 21, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sang-Jin Jeon, Gwang-Bum Ko
  • Patent number: 8866143
    Abstract: The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: October 21, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Toru Takayama, Toshiji Hamatani
  • Patent number: 8829521
    Abstract: Provided is a TFT board for a liquid crystal display device including: a circuit layer formed on a substrate, the circuit layer including a thin film transistor including a semiconductor layer, a gate electrode, a drain electrode, and a source electrode; and a color filter layer formed on the circuit layer. The color filter layer has a through hole formed therein above the semiconductor layer in a region between the source electrode and the drain electrode.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: September 9, 2014
    Assignee: Panasonic Liquid Crystal Display Co., Ltd.
    Inventors: Tetsuya Kawamura, Masumi Yoshida
  • Patent number: 8829523
    Abstract: The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT, so as to save the process cost. Further, the source electrode and drain electrode of the TFT are also manufactured with poly-silicon rather than metal material used in prior art, processing steps are simplified, thereby further saving the process cost.
    Type: Grant
    Filed: November 4, 2013
    Date of Patent: September 9, 2014
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.
    Inventors: Shijian Qin, Chengming He
  • Patent number: 8816351
    Abstract: A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: August 26, 2014
    Assignee: Japan Display Inc.
    Inventors: Kian Kiat Lim, Atsushi Nakamura, Kai Pheng Tan, Eng Soon Lim, Poh Ling Fu, Takaaki Kamimura
  • Patent number: 8816363
    Abstract: A method of manufacturing an organic light-emitting element. A first layer is formed above a substrate, and exhibits hole injection properties. A bank material layer is formed above the first layer using a bank material. Banks are formed by patterning the bank material layer, and forming a resin film on a surface of the first layer by attaching a portion of the bank material layer to the first layer, the banks defining apertures corresponding to light-emitters, the resin material being the same as the bank material. A functional layer is formed by applying ink to the apertures that contacts the resin film. The ink contains an organic material. The functional layer includes an organic light-emitting layer. A second layer is formed above the functional layer and exhibits electron injection properties. The hole injection properties of the first layer are then degraded by applying electrical power to an element structure.
    Type: Grant
    Filed: January 30, 2012
    Date of Patent: August 26, 2014
    Assignee: Panasonic Corporation
    Inventors: Takashi Isobe, Kosuke Mishima, Kaori Akamatsu, Satoru Ohuchi
  • Patent number: 8809863
    Abstract: A thin-film transistor array substrate, an organic light-emitting display having the same, and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the thin-film transistor array substrate includes a buffer layer formed on a substrate, a first insulating layer formed on the buffer layer, a pixel electrode formed on the first insulating layer using a transparent conductive material, an intermediate layer that covers an upper side and outer side-surfaces of the pixel electrode and includes a organic light-emitting layer, a gap formed by etching the first insulating layer and the buffer layer at a peripheral of the pixel electrode, and a facing electrode that is formed on an upper side and outer side-surfaces of the pixel electrode to cover the intermediate layer and the gap.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: August 19, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dae-Woo Kim, Jong-Hyun Park, Yul-Kyu Lee
  • Patent number: 8809866
    Abstract: An organic EL device as a light emitting device includes: a first light emitting element that is disposed on a first surface of a substrate and that has a first pixel electrode; a second light emitting element that has a second pixel electrode; and an insulating layer that is provided with a first opening which exposes the first pixel electrode and a second opening which exposes the second pixel electrode. Further, in the organic EL device, the first opening is configured so that the insulating layer covers equal to or more than 50% of the circumferential edge portion of the first pixel electrode, and the second opening is configured so that the insulating layer covers less than 50% of the circumferential edge portion of the second pixel electrode.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: August 19, 2014
    Assignee: Seiko Epson Corporation
    Inventors: Masanori Iwasaki, Shin Fujita
  • Patent number: 8791472
    Abstract: A substrate includes a storage line, first and second gate lines and first and second pixel electrodes. The storage line extends along a first direction on the substrate. The first and second gate lines are substantially parallel with the storage line. The first pixel electrode is formed between the first gate line and the storage line. The second pixel electrode is formed between the second gate line and the storage line.
    Type: Grant
    Filed: January 5, 2012
    Date of Patent: July 29, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sun-Kyu Joo, Ho-Kyoon Kwon, Sung-Man Kim
  • Patent number: 8792060
    Abstract: A liquid crystal display device with a built-in touch screen, which uses a common electrode as a touch-sensing electrode including an intersection of a gate line and a data line to define a pixel region, a bridge line disposed in a central portion of the pixel, an insulating layer formed on the bridge line, a first contact hole disposed through the insulating layer to expose a predetermined portion of an upper surface of the bridge line, a contact metal on the insulating layer and inside the first contact hole, the contact metal electrically connected with the bridge line, a first passivation layer on the contact metal, a second contact hole disposed through the first passivation layer to expose a predetermined portion of an upper surface of the contact metal, a common electrode on the first passivation layer and inside the second contact hole, a conductive line electrically connected with the common electrode, and a second passivation layer on the first passivation layer and the conductive line, wherein the
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: July 29, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Kum Mi Oh, Jae Hoon Park, Han Seok Lee, Hee Sun Shin, Won Keun Park
  • Patent number: 8785302
    Abstract: A crystal silicon film forming method according to the present invention includes: forming a metal film; forming an insulating film on the metal film, and forming a crystal silicon film made of polycrystal Si on the insulating film. In the forming of an insulating film, the insulating film is formed within a film thickness range of 160 nm to 190 nm. The forming of a crystal silicon film includes forming an amorphous silicon film made of a-Si on the insulating film, within a film thickness range of 30 nm to 45 nm, and forming the crystal silicon film from the amorphous silicon film by irradiating the amorphous silicon film with a light of a green laser.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: July 22, 2014
    Assignee: Panasonic Corporation
    Inventor: Yasuo Segawa
  • Patent number: 8779430
    Abstract: A semiconductor device (18) includes: a gate electrode (102) formed on a substrate (101); a semiconductor layer (104) formed above the gate electrode (102) and including a source region, a drain region, and a channel region; a source electrode (106) connected to the source region above the semiconductor layer (104); and a drain electrode (107) connected to the drain region above the semiconductor layer (104). The semiconductor layer (104) has, at a portion overlapping the drain electrode (107), a protrusion that protrudes outward along an extending direction of a drain line drawn out from the drain electrode (107). At an outside of the channel region sandwiched between the drain electrode (107) and the source electrode (106), the semiconductor layer (104) has an adjustment portion where an outer boundary of the semiconductor layer (104) is positioned more inward than an outer boundary of the gate electrode (102).
    Type: Grant
    Filed: April 27, 2011
    Date of Patent: July 15, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shoji Okazaki, Takeshi Yaneda, Wataru Nakamura, Hiromitsu Katsui
  • Patent number: 8772799
    Abstract: A display substrate includes a base substrate, color filter layers, a bottom supporting layer and a light-blocking and maintaining element. The base substrate includes a gate line, a data line crossing the gate line, and a switching element on the base substrate. The color filter layers are adjacent to each other on the base substrate. The bottom supporting layer is between the color filter layers adjacent to each other and on the base substrate. The light-blocking and maintaining element is between the color filter layers adjacent to each other, and on the bottom supporting layer. The light-blocking and maintaining element includes a light blocking portion, and a maintaining portion which overlaps the bottom supporting layer and protrudes from the light blocking portion.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: July 8, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dong-Uk Kang, Chul Huh, Sang-Hun Lee, Gwan-Soo Kim
  • Patent number: 8772780
    Abstract: An array substrate structure of a display panel includes a substrate, a plurality of first wirings, a first patterned insulating layer, a plurality of second wirings, a plurality of first protective patterns, and a plurality of second protective patterns. The substrate has a wiring region. The first wirings are disposed in the wiring region. The first patterned insulating layer is disposed on the first wirings. The second wirings are disposed on the first patterned insulating layer. The first protective patterns are disposed in the wiring region and disposed on the corresponding second wiring, respectively, where the first protective pattern includes a semiconductor material. The second protective patterns are disposed on the corresponding first protective pattern, respectively, where the second protective pattern includes an inorganic insulating material.
    Type: Grant
    Filed: September 11, 2012
    Date of Patent: July 8, 2014
    Assignee: AU Optronics Corp.
    Inventors: Kuo-Yu Huang, Te-Chun Huang
  • Patent number: 8766265
    Abstract: An OLED device includes: a TFT including an active layer, gate, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the source and drain electrodes, a pixel electrode on the first and second insulating layers, connected to one of the source and drain electrodes, a capacitor including a first electrode on the same layer as the active layer, a second electrode on the same layer as the gate electrode, and a third electrode formed of the same material as the pixel electrode, a third insulating layer between the second insulating layer and the pixel electrode and between the second and third electrodes, a fourth insulating layer covering the source, drain and third electrodes, exposing a portion of the pixel electrode, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: July 1, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: June-Woo Lee, Jae-Beom Choi, Kwan-Wook Jung, Seong-Hyun Jin, Kwang-Hae Kim, Ga-Young Kim
  • Patent number: 8766263
    Abstract: In an IPS type liquid crystal display device having a reduced number of layers and formed through a reduced number of photolithography steps, an off current of a TFT is prevented from increasing due to photocurrent. A drain line, a TFT drain electrode, and a source electrode each have a multilayer structure including metal and a semiconductor layer. The drain line and the semiconductor layer formed thereunder are separated from the drain electrode and the semiconductor layer formed thereunder with the drain line and the drain electrode connected by a blocking conductive film formed of ITO of which the pixel electrode is also formed. Photocurrent generated by backlight is blocked by the blocking conductive film without flowing into the TFT. Therefore, the number of photomasks required in the production process can be decreased without an increase of causing the off current of the TFT.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: July 1, 2014
    Assignees: Japan Display Inc., Panasonic Liquid Crystal Display Co., Ltd.
    Inventor: Takahiro Nagami
  • Patent number: 8766314
    Abstract: An object is to provide a light-emitting device having a structure in which an external connection portion can easily be connected and a method for manufacturing the light-emitting device. A light-emitting device includes a lower support 110, a base insulating film 112 over the lower support 110 which has a through-hole 130, a light-emitting element 127 over the base insulating film 112, and an upper support 122 over the light-emitting element 127. An electrode 131 is provided in the through-hole 130, and the external connection terminal 132 electrically connected to the electrode 131 is provided below the base insulating film 112. The external connection terminal 132 is electrically connected to the external connection portion 133 and functions as a terminal that inputs a signal or a power supply into the light-emitting device. This light-emitting device has a structure in which an external connection portion can easily be connected.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: July 1, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kaoru Hatano, Satoshi Seo
  • Patent number: 8759845
    Abstract: A light emitting device (10) comprises a body (12) of a semiconductor material. A first junction region (14) is formed in the body between a first region (12.1) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction region (16) is formed in the body between the second region (12.2) of the body and a third region (12.3) of the body of the first doping kind. A terminal arrangement (18) is connected to the body for, in use, reverse biasing the first junction region (14) into a breakdown mode and for forward biasing at least part (16.1) of the second junction region (16), to inject carriers towards the first junction region (14). The device (10) is configured so that a first depletion region (20) associated with the reverse biased first junction region (14) punches through to a second depletion region associated with the forward biased second junction region (16).
    Type: Grant
    Filed: January 21, 2009
    Date of Patent: June 24, 2014
    Assignee: Insiava (Pty) Limited
    Inventors: Lukas Willem Snyman, Monuko Du Plessis
  • Patent number: 8759833
    Abstract: A thin film transistor (“TFT”) array panel is provided. The TFT array panel includes an insulation substrate, a gate line formed on the insulation substrate and including a gate electrode, a data line insulated from and intersecting the gate line, and including a source electrode, a drain electrode opposite to the source electrode on the gate line, and a semiconductor formed in a layer between the data line and the gate line, and having a protruding portion extending below the drain electrode, wherein a portion of the semiconductor extending towards the drain electrode, from an area occupied by the data line, is positioned within an occupying area of the gate line including the gate electrode.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: June 24, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Kyung-Wook Kim, Min-Wook Park
  • Patent number: 8742417
    Abstract: According to this disclosure of a thin film transistor array panel and the manufacturing method thereof, dams have a function of forming a light blocking member by an inkjet printing method and are formed along with color filters. Spacers are formed by the inkjet printing method along with the light blocking member and color filters. Advantages of this panel and its manufacturing method are a reduction in an alignment error of the light blocking member and the color filters, reduced manufacturing cost, and a simplified manufacturing.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: June 3, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yoon Ho Kang, Sang-Uk Lim, Young-Soo Yoon, Woo Sub Shim
  • Patent number: 8723172
    Abstract: A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: May 13, 2014
    Assignee: E Ink Holdings Inc.
    Inventors: Fang-An Shu, Lee-Tyng Chen, Henry Wang, Wei-Chou Lan, Tung-Liang Lin
  • Patent number: 8709836
    Abstract: An object is to provide a method for manufacturing a thin film transistor and a display device with reduced number of masks, in which adverse effects of optical current are suppressed. A manufacturing method comprises forming a stack including, from bottom to top, a light-blocking film, a base film, a first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; performing first etching on the whole thickness of the stack using a first resist mask formed over it; forming a gate electrode layer by side etching the first conductive film in a second etching; forming a second resist mask over the stack; and performing third etching down to the semiconductor film, and partially etching it, using the second resist mask to form a source and drain electrode layer, a source and drain region, and a semiconductor layer.
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: April 29, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Takafumi Mizoguchi
  • Patent number: 8704237
    Abstract: An organic light-emitting display device includes a thin film transistor including an active layer, a gate electrode, source/drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer over the gate electrode; a pixel electrode on the first insulating layer and the second insulating layer and connected to the source or drain electrode; a first wire on the first insulating layer, of the same material as the gate electrode; a second wire on the second insulating layer to at least partially overlap the first wire and including a lower wiring layer of the same material as the pixel electrode and an upper wiring layer on the lower wiring layer, of the same material as the source/drain electrodes; and third insulating layers between the second insulating layer and the pixel electrode and between the second insulating layer and the second wire.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: April 22, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Hae-yeon Lee, Jin-Gon Oh, Jae-Beom Choi, June-Woo Lee
  • Patent number: 8704236
    Abstract: A thin film transistor (TFT) and a flat panel display device including the same. The TFT includes a substrate, a gate electrode formed over the substrate, the gate electrode formed with silicon doped with impurities, a gate wiring connected to the gate electrode, an active layer formed over the gate electrode, and source and drain electrodes connected to the active layer. According to such a structure, since heat flow to the gate electrode during crystallization of the active layer may be prevented, stable crystallization of the active layer may be performed, and thus an error rate of a product may be decreased.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: April 22, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Chun-Gi You, Joon-Hoo Choi
  • Patent number: 8704233
    Abstract: The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: April 22, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama
  • Patent number: 8704231
    Abstract: An array substrate of a TFT-LCD, comprising: a base substrate; gate lines and data lines formed on the substrate, the gate lines and the data lines crossing with each other to define a plurality of pixel units each of which comprises a thin film transistor, a first electrode layer and a second electrode layer, wherein the first electrode layer is separated from the second electrode layer through an insulation layer; the first electrode layer comprises a plurality of first electrodes separated by openings; the second electrode layer comprises a plurality of second electrodes separated by openings; the second electrodes comprise overlapping electrodes each of which completely overlaps with the first electrodes and non-overlapping electrodes whose edges are completely located within an region corresponding to the openings in the first electrode layer.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: April 22, 2014
    Assignees: Boe Technology Group Co., Ltd., Hefei Xinsheng Optoelectronics Technology Co., Ltd.
    Inventors: Rongge Sun, Xin Ye
  • Publication number: 20140104527
    Abstract: An active matrix liquid crystal display having an array of pixels is provided. The display includes a thin film transistor (TFT) for each pixel. The TFT has a gate electrode, a source electrode overlapping with a first area of the gate electrode, and a drain electrode overlapping with a second area with the gate electrode. The display also includes a color filter layer disposed over the TFT. The color filter layer has a first via hole to expose a portion of the drain electrode. The display further includes a metal layer disposed over the color filter layer and covering the gate electrode. The metal layer is configured to connect to the drain electrode through the first via hole. The display also includes an organic insulator layer disposed over the metal layer. The organic insulator layer has a second via hole to expose a first portion of the metal layer and a third via hole to expose a second portion of the metal layer.
    Type: Application
    Filed: October 17, 2012
    Publication date: April 17, 2014
    Applicant: Apple Inc.
    Inventors: Young Cheol Yang, Young Bae Park, Cheng Chen, John Z. Zhong
  • Patent number: 8698144
    Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.
    Type: Grant
    Filed: March 25, 2010
    Date of Patent: April 15, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Kyung-Sook Jeon, Kap-Soo Yoon, Woong-Kwon Kim, Sang-Youn Han, Jun-Ho Song, Sung-Hoon Yang, Byeong-Hoon Cho, Dae-Cheol Kim, Ki-Hun Jeong, Jung-Suk Bang
  • Patent number: 8691604
    Abstract: A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: April 8, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junya Maruyama, Toru Takayama, Yumiko Ohno, Shunpei Yamazaki
  • Patent number: 8686446
    Abstract: A capacitor device prevents capacitor failure and pixel failure by preventing the capacitor from experiencing a short circuit caused by disconnection of a bridge formed between electrodes of the capacitor and a display apparatus having the capacitor device. A display device comprises a thin film transistor, a light emitting device, and the capacitor device described above.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: April 1, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventor: Sang-Min Hong
  • Patent number: 8686423
    Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: April 1, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sung-Ryul Kim, Jean-Ho Song, Jae-Hyoung Youn, O-Sung Seo, Byeong-Beom Kim, Je-Hyeong Park, Jong-In Kim, Jae-Jin Song
  • Patent number: 8680529
    Abstract: A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate electrode, a semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, and a second gate electrode. The pixel electrode and the second gate electrode are provided over the second insulating layer. The first gate electrode has a region overlapping with the semiconductor layer with the first insulating layer provided therebetween. The second gate electrode has a region overlapping with the semiconductor layer with the second insulating layer provided therebetween. A first region is at least part of a region where the second gate electrode overlaps with the semiconductor layer. A second region is at least part of a region where the pixel electrode is provided. The second insulating layer is thinner in the first region than in the second region.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: March 25, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 8669557
    Abstract: The present invention relates to a thin film transistor substrate and a method for fabricating the same which can reduce a number of steps.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: March 11, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Hee-Young Kwack, Mun Gi Park