Abstract: A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and which in exposure to said first, relatively shorter wavelength radiation, is excited to responsively emit second, relatively longer wavelength radiation. In a specific embodiment, monochromatic blue or UV light output from a light-emitting diode is down-converted to white light by packaging the diode with fluorescent organic and/or inorganic fluorescers and phosphors in a polymeric matrix.

Abstract: A backlight structure includes a light source module and a light guiding plate. The light source module includes a circuit board, a lighting unit arranged on the circuit board, and a hollow baffle plate surrounding the lighting unit. The circuit board defines a groove in a surface thereof, and a bottom end of the baffle plate is embedded in the groove. The lighting unit is located between the light guiding plate and the circuit board, and the light guiding plate is disposed on the baffle plate. A method for manufacturing the backlight structure is also provided.

Abstract: An LED package includes a substrate, an LED chip, a bounding dam, and a first encapsulation. The substrate includes a first surface and a second surface opposite to the first surface. The LED chip is mounted on the first surface of the substrate. The bounding dam is formed on the first surface of the substrate and surrounds the LED chip. The bounding dam and the substrate cooperatively define a receiving space. The bounding dam is made of thermoset resin. The first encapsulation is formed in the receiving space and encloses the LED chip.

Abstract: A light-emitting device includes: a substrate; a light-emitting section provided on an upper surface of the substrate, the light-emitting section including an LED chip and a sealing resin containing fluorescent material covering the LED chip; and a silicon oxide insulating film provided between the substrate and the light-emitting section, the silicon oxide insulating film being formed directly on an upper surface of the substrate or an alumina insulating film, the sealing resin containing fluorescent material formed directly on an upper surface of the silicon oxide insulating film so as to cover the LED chip. Thus, this invention provides the light-emitting device capable of making the sealing resin difficult to be separated from the substrate and a method for manufacturing the light-emitting device.

Abstract: A package having a light-emitting element includes a substrate having a light-emitting element disposed thereon, an insulating layer formed on the substrate and having an opening for exposing the light-emitting element, a florescent layer formed in the opening of the insulating layer for encapsulating the light-emitting element, and a transparent material formed on the florescent layer and the insulating layer. As such, a specific space can be defined by the insulating layer for exposing the light-emitting element and forming the fluorescent layer, thereby overcoming the problem of non-uniform coating of phosphor powder as encountered in prior techniques.

Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.

Abstract: A method for making an LED lamp includes a first step of working a base plate, a second step of placing the base plate in a die cavity of an injection molding machine, and a third step of forming a housing in the die cavity of the injection molding machine to combine the housing with the base plate. The base plate is integrally combined with the housing completely by injection molding so that the base plate and the housing are combined closely and solidly and will not detach from each other.

Abstract: A method for packaging an LED includes steps: providing a substrate with a circuit structure formed thereon, stacking the substrate on a supporting board, and arranging a plurality of LED dies on the substrate; providing a mold and a gelatinous-state fluorescent film, positioning the supporting board in the mold and covering the mold with the gelatinous-state fluorescent film to cooperatively define a receiving space among the fluorescent film, the mold and the supporting board, the substrate and the LED dies being received in the receiving space; exhausting air in the receiving space to attach the gelatinous-state fluorescent film on the LED dies; solidifying the gelatinous-state fluorescent film and removing the mold; forming an encapsulation on the substrate to cover the LED dies; cutting the substrate and removing the supporting board to obtain several individual LED packages.

Abstract: An electronic light emitting device includes a leadframe, a light emitting diode arranged above a first surface of the leadframe, a semiconductor chip including an electronic circuit to drive the light emitting diode, the semiconductor chip arranged above a second surface of the leadframe opposite to the first surface of the leadframe.

Abstract: An optoelectronic component includes a semiconductor body and a carrier substrate connected to the semiconductor body with a solder joint, wherein the carrier substrate includes first and second apertures, through which first and second electrically conductive connecting layers are guided from a first primary surface of the carrier substrate facing away from the semiconductor body to a second primary surface of the carrier substrate facing away from the semiconductor body, the carrier substrate made of a semiconductor material and having side flanks, which run obliquely to the primary surfaces at least in a first partial region, wherein the side flanks are provided with an electrically insulating layer in the first partial region.

Abstract: A silicone resin composition that exhibits low gas permeability and is suitable for encapsulating optical semiconductors. The composition includes: (A) an organopolysiloxane having a specific structure containing two or more alkenyl groups, (B) an organohydrogenpolysiloxane composed of two organohydrogenpolysiloxanes having specific structures, in which the mass ratio between the two organohydrogenpolysiloxanes is within a range from 10:90 to 90:10, in an amount that provides 0.4 to 4.0 mols of silicon atom-bonded hydrogen atoms within the component (B) per 1 mol of alkenyl groups within the component (A), and (C) an addition reaction catalyst.

Abstract: A display device includes a flexible panel and a cover member. The flexible panel includes a first substrate and a second substrate. The first substrate includes a first support layer in which an organic insulation layer and an inorganic insulation layer are stacked thereon, and a thin-film transistor and a pixel electrode disposed on the first support layer. The second substrate is opposite to the first substrate. The second substrate includes an organic insulation layer and a second support layer on which the inorganic insulation layer is deposited. The cover member covers an outer surface of the flexible panel. Thus, a display device is manufactured by using a support layer on which an organic insulation layer and an inorganic insulation layer are coated as a base substrate, so that defects generated in a manufacturing process may be prevented.

Abstract: An LED module includes a first dielectric layer, and a first patterned conductive layer having first, second, and third die-bonding pads. Each die-bonding pad includes a pad body having a die-bonding area, and an extension extended from the pad body. The extension of the first die-bonding pad extends in proximity to the die-bonding area of the second die-bonding pad. The extension of the second die-bonding pad extends in proximity to the die-bonding area of the third die-bonding cad. A second dielectric layer disposed on the first patterned conductive layer includes three dielectric members corresponding respectively to the die-bonding pads of the first patterned conductive layer. Each dielectric member includes a chip-receiving hole exposing the die-bonding area of a respective die-bonding pad for attachment of an LED chip thereto, and a wire-passage hole spaced apart from the chip-receiving hole to expose partially the first patterned conductive layer for bonding a wire.

Abstract: A method of forming an embedded wafer level optical package includes attaching a sensor die, PCB bars and an LED on adhesive tape laminated on a carrier, attaching a dam between two light sensitive sensors of the sensor die, encapsulating the sensor die, the PCB bars, the LED, and the dam in an encapsulation layer, debonding the carrier, grinding a top surface of the encapsulation layer, forming vias through the encapsulation layer to the sensor die and the LED, filling the vias with conductive material, metalizing the top surface of the encapsulation layer, dielectric coating of the top surface of the encapsulation layer, dielectric coating of a bottom surface of the encapsulation layer, patterning the dielectric coating of the bottom surface of the encapsulation layer, and plating the patterned dielectric coating of the bottom surface of the encapsulation layer.

Abstract: A method for packaging an LED, includes steps: providing a supporting board and then dripping a gel mixed with fluorescent therein on the supporting board; scraping the gel over the supporting board with a scraper form a gelatinous fluorescent film on the supporting board, and solidifying the gelatinous fluorescent film pieces to form a solidified fluorescent film; cutting the solidified fluorescent film into individual pieces, and peeling the solid fluorescent films from the supporting board; attaching one piece of the fluorescent film on a light outputting surface of an LED die; mounting the LED die on a substrate, and electrically connecting the LED die to the circuit structure; and forming an encapsulation on the substrate to cover the LED die.

Abstract: An LED package structure includes: a carrier; at least a first protruding portion and a plurality of electrical contacts formed on the carrier; a plurality of LED chips disposed on the first protruding portion and on the carrier in a region free from the first protruding portion, respectively; a plurality of bonding wires electrically connecting the LED chips and the electrical contacts; and a phosphor covering the LED chips, the electrical contacts and the bonding wires. The LED chips are disposed at different heights so as to allow the portions of the phosphor on the LED chips to have different thicknesses and thus generate light with different color temperatures.

Abstract: The present invention relates to an epoxy resin composition for an optical semiconductor device having an optical semiconductor element mounting region and having a reflector that surrounds at least a part of the region, the epoxy resin composition being an epoxy resin composition for forming the reflector, the epoxy resin composition including the following ingredients (A) to (D): (A) an epoxy resin; (B) a curing agent; (C) a white pigment; and (D) at least one antioxidant selected from the group consisting of hindered-phenol antioxidants, sulfide antioxidants and hindered-amine antioxidants.

Abstract: A method of manufacturing a flexible display device is provided. The method includes: preparing a first flexible substrate on which a display unit is formed; forming an encapsulation unit including a base substrate, a second flexible substrate formed on the base substrate, and a barrier layer formed on the second flexible substrate; combining the encapsulation unit with the display unit; and separating the base substrate from the second flexible substrate by using a difference between a coefficient of thermal expansion of the base substrate and a coefficient of thermal expansion of the second flexible substrate, by applying a heated solution between the base substrate and the second flexible substrate. The flexible display device is easily manufactured since the base substrate and the second flexible substrate, which have different coefficients of thermal expansion and are coupled to each other, are separable from each other by applying the heated solution.

Abstract: The present disclosure provides a light emitting diode (LED) apparatus. The LED apparatus includes an LED emitter having a top surface; and a phosphor feature disposed on the LED emitter. The phosphor feature includes a first phosphor film disposed on the top surface of the LED emitter and having a first dimension defined in a direction parallel to the top surface of the LED emitter; a second phosphor film disposed on the first phosphor film and having a second dimension defined in the direction; and the second dimension is substantially less than the first dimension.

Abstract: There is herein described a LED lighting device utilizing quantum dots in layers on top of an LED chip. The quantum dots layers and the LED chip are arranged with gradient refractive indices, so that the refractive index of each layer is preferably less than the refractive index of the immediately underlying layer or chip. The quantum dots with emission peaks at longer wavelengths are preferably arranged in lower layers closer to the LED chip; while the quantum dots with emission peaks at shorter wavelengths are arranged in higher layers farther from the LED chip.

Abstract: Semiconductor light emitting devices include an aluminum nitride substrate, a light emitting diode on a face of the substrate and flexible silicone film that includes a silicone lens on the face of the substrate. The light emitting diode emits light through the silicone lens.

Abstract: It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device. In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.

Abstract: A light emitter package with primary optic and method of fabricating the same is disclosed that comprises a light emitter disposed on a surface. The package further comprises at least one intermediate element on the surface and at least partially surrounding the light emitter. Furthermore, an encapsulant is over the light emitter forming a primary optic. The intermediate element at least partially defines the shape of the primary optic.

Abstract: A light emitting diode (LED) package structure includes a substrate, at least one enclosure made of a transparent material, an LED, a first package material, and a second package material. The enclosure is disposed on a surface of the substrate, and forms a configuration area for disposing the LED therein. The first package material made of a transparent material is disposed in the configuration area and covers the LED. The second package material containing a fluorescent material covers the enclosure, the LED, and the first package material.

Abstract: A manufacturing method of pixel structure includes: sequentially forming a gate, a gate insulation layer, a semiconductor layer and a conductive layer on a substrate; forming a first patterned photoresist layer including multiple first photoresist blocks and multiple second photoresist blocks on the conductive layer; reducing the thickness of the first patterned photoresist layer until the second photoresist blocks are completely removed; forming a pixel electrode layer and a second photoresist layer on a partial pixel electrode layer; removing a part of the pixel electrode layer exposed by the second photoresist layer, a partial conductive layer and a partial semiconductor layer both under the removed pixel electrode layer to define a first electrode block, a second electrode block and a channel region; removing the remained first patterned photoresist layer and second photoresist layer and forming a protective layer and a common electrode layer on a part of the protective layer.

Abstract: A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar.

Abstract: A package of an environmental sensitive electronic element including a first substrate, a second substrate, an environmental sensitive electronic element, a flexible structure layer and a filler layer is provided. The environmental sensitive electronic element is disposed on the first substrate and located between the first substrate and the second substrate. The environmental sensitive electronic element includes an anode layer, a hole injecting layer, a hole transporting layer, an organic light emitting layer, a cathode layer and an electron injection layer. The flexible structure layer is disposed on the environmental sensitive electronic element and includes a soft layer, a trapping layer and a protective layer. The material of the trapping layer is the same as the material of the electron injection layer. The filler layer is disposed between the first substrate and the second substrate and encapsulates the environmental sensitive electronic element and the flexible structure layer.

Abstract: Gas permeation barriers can be deposited on plastic or glass substrates by atomic layer deposition (ALD). The use of the ALD coatings can reduce permeation by many orders of magnitude at thicknesses of tens of nanometers with low concentrations of coating defects. These thin coatings preserve the flexibility and transparency of the plastic substrate. Such articles are useful in container, electrical and electronic applications.

Abstract: Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.

Abstract: In various embodiments, an illumination apparatus includes an air gap between a sub-assembly and a waveguide attached thereto at a plurality of discrete attachment points, as well as a bare-die light-emitting diode encapsulated by the waveguide.

Abstract: An LED includes an LED chip, a first package configured for packaging the LED chip, the first package including a flat first surface, and a second package including a second surface opposing the first surface. A micro-structure is defined in the second surface and protruding toward the first surface. A gap is maintained between the first and second surfaces. The gap is filled with a filler, and the refractive index of the filler is smaller than that of the first and second packages. Light generated by the LED chip radiates first through the first package, then the gap and the micro-structure, thereafter the second package to finally reach an outside of the LED. A light module including the LED is also provided.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light.

Abstract: A display panel having a non-display region and having a display region that includes a plurality of pixel regions, each of the pixel regions including a thin film transistor, the display panel including: an array substrate including the display region, the non-display region, a first base substrate including a gate line, a data line and a thin film transistor, an insulating layer covering the first base substrate, and a pixel electrode on the insulating layer; an opposite substrate over the array substrate; a light blocking pattern on the array substrate, the light blocking pattern surrounding the display region and intersecting the gate line and the data line; and an encapsulating element on the light blocking pattern, the encapsulating element bonding and sealing the array substrate and the opposite substrate, wherein: the thin film transistor is coupled to the gate line and the data line, the insulating layer has a contact hole exposing a drain electrode of the thin film transistor, and the pixel electrod

Abstract: An underfill formation technique for LEDs molds a reflective underfill material to encapsulate LED dies mounted on a submount wafer while forming a reflective layer of the underfill material over the submount wafer. The underfill material is then hardened, such as by curing. The cured underfill material over the top of the LED dies is removed using microbead blasting while leaving the reflective layer over the submount surface. The exposed growth substrate is then removed from all the LED dies, and a phosphor layer is molded over the exposed LED surface. A lens is then molded over the LEDs and over a portion of the reflective layer. The submount wafer is then singulated. The reflective layer increases the efficiency of the LED device by reducing light absorption by the submount without any additional processing steps.

Abstract: [Object] To provide a silicone resin composition for optical semiconductor devices, which has a low gas permeability and high dependability. [Means for solution] The silicone resin composition of the present invention contains the following components (A) through (D): (A) an organopolysiloxane as shown in the following general formula (1) in which the number of alkenyl groups contained per one molecule is two or more (R1SiO3/2)x(R23SiO1/2)y(R22SiO2/2)z??(1) (wherein R1 is a cycloalkyl group, R2 is either one kind of or more than one kind of substituted or non-substituted monovalent hydrocarbon group having 1-10 carbon atoms, x is 0.5-0.9, y is 0.1-0.5, z is 0-0.2, and x+y+z=1.0), (B) a hydrogen organopolysiloxane containing at least two SiH groups per one molecule, (C) a catalyst for addition reaction, (D) an adhesion promoter agent.

Abstract: A semiconductor device and methods of manufacturing the same are disclosed. Specifically, methods and devices for manufacturing optocouplers are disclosed. Even more specifically, methods and devices that deposit one or more encapsulant materials on optocouplers are disclosed. The encapsulant material may include silicone and the devices used to deposit the silicone may be configured to simultaneously deposit the silicone on different sides of the optocoupler, thereby reducing manufacturing steps and time.

Abstract: A method of fabricating semiconductor devices is disclosed. The method comprises providing a wafer comprising a substrate with a plurality of epitaxial layers mounted on the substrate. Patterns are formed above the plurality of epitaxial layers remote from the substrate. A second substrate of a conductive metal is formed on the plurality of epitaxial layers remote from the substrate and between the patterns. The second substrate, the plurality of epitaxial layers and the substrate are at least partially encapsulated with a soft buffer material. The substrate is separated from the plurality of epitaxial layers at the wafer level and while the plurality of epitaxial layers are intact while preserving electrical and mechanical properties of the plurality of epitaxial layers by applying a laser beam through the substrate to an interface of the substrate and the plurality of epitaxial layers, the laser beam having well defined edges.

Abstract: An object of the present invention is to provide a light emitting device that shows high adhesion between a sealing member and a package member. A light emitting device 100 of the present invention comprises a package 20 with a recess 60 having a bottom face 20a and a side wall 20b, a light emitting element 10 mounted on the bottom face 20a of the recess 60 of the package 20, and a sealing member 40 filled in the recess 60 of the package 20, with which the light emitting element 10 is coated, wherein the package 20 contains, against the entire monomer component, from 5 to 70% by weight of potassium titanate fibers and/or wollastonite, from 10 to 50% by weight of titanium oxide, and from 15 to 85% by weight of a semiaromatic polyamide containing 20 mol % or more of an aromatic monomer, a part of the side wall 20b of the recess 60 of the package 20 has a thickness of 100 ?m or less, and the sealing member 40 is made of silicone.

Abstract: An organic electroluminescent light source including a first organic electroluminescent device and a second organic electroluminescent device is provided. The first organic electroluminescent device is coupled to a first bias voltage to emit a first color light having a color temperature ranging from 2800K to 3500K. The second organic electroluminescent device is coupled to a second bias voltage to emit a second color light. The first color light and the second color light mix to generate a third color light having a color temperature ranging from 3500K to 6500K.

Abstract: A method for manufacturing an LED is disclosed. Firstly, a base with two leads is provided. The base has a cavity defined in a top face thereof and two holes defined in two lateral faces thereof. The two holes communicate the cavity with an outside environment. A chip is fixed in the cavity and electrically connected to the two leads. A cover is placed on the top face of the base to cover the cavity. An encapsulation liquid is filled into the cavity through one hole until the encapsulation liquid joins a bottom face of the cover. Finally, the encapsulation liquid is cured to form an encapsulant. A top face of the cover functions as a light emergent face of the LED.

Abstract: A silicone resin sheet is formed from a resin composition containing a thermosetting silicone resin and microparticles. The complex viscosity thereof at a frequency of 10 Hz is 80 to 1000 Pa·s and the tan ? thereof at a frequency of 10 Hz is 0.3 to 1.6 obtained by a dynamic viscoelastic measurement at a frequency of 0.1 to 50 Hz at 30° C.; a rate of frequency increase of 10 Hz/min; and a distortion of 1% in a shear mode.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, an electrode layer, a conductive support member and a first buffer member. The compound semiconductor layers comprise a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. The electrode layer is disposed under the plurality of compound semiconductor layers. The conductive support member is disposed under the electrode layer. The first buffer member is embedded to be spaced apart, in the conductive support member.

Abstract: There is provided a light emitting diode (LED) package including: a package main body; an LED chip mounted on the package main body; and a hydrophobic pattern formed on the package main body spaced apart from the LED chip; and a resin unit encapsulating the LED chip and the resin unit is defined by the hydrophobic pattern. The LED package and a fabrication thereof which incur less production costs and have various patterns and enhanced intensity of illumination can be provided.

Abstract: An optical semiconductor package sealing resin material used to seal an optical semiconductor chip in a semiconductor package includes a thermosetting epoxy composition and a hydrophobic smectite clay mineral. The hydrophobic smectite clay mineral is hydrophobized by subjecting a hydrophilic smectite clay mineral to an intercalation reaction with an alkylammonium halide. The smectite clay mineral is bentonite, saponite, hectorite, vermiculite, stevensite, tainiolite, montmorillonite, or nontronite.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.

Abstract: A light emitting diode that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2.

Abstract: There are provided an optical semiconductor sealing curable composition that provides a cured material having excellent transparency, and an optical semiconductor apparatus having an optical semiconductor device sealed using the cured material obtained by curing the optical semiconductor sealing curable composition. There is provided an optical semiconductor sealing curable composition containing: (A) a linear polyfluoro compound; (B) cyclic organosiloxane having an SiH group and a fluorine-containing organic group; (C) a platinum group metal catalyst; (D) cyclic organosiloxane having an SiH group, fluorine-containing organic group, and an epoxy group; and (E) cyclic organosiloxane having an SiH group, a fluorine-containing organic group, and a cyclic carboxylic acid anhydride residue.

Abstract: A light emitting layer including a plurality of light emitting particles embedded within a host matrix material. Each of said light emitting particles includes a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. A method of fabricating a light emitting layer comprising a plurality of light emitting particles embedded within a host matrix material, each of said light emitting particles comprising a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. The method comprises providing a dispersion containing said light emitting particles, depositing said dispersion to form a film, and processing said film to produce said light emitting layer.

Abstract: A chip package structure including a carrier, a chip and a molding compound is provided. The chip is disposed on the carrier. The molding compound encapsulates a portion of the carrier and the chip. The top surface of the molding compound has a pin one dot and a pin gate contact. The pin one dot is located at a first corner on the top surface. The pin gate contact is located at a second corner except the first corner. The invention further provides a chip package mold chase and a chip package process using to form the chip package structure.