Abstract: An imaging element 10 includes a first electrode 21, a charge accumulation electrode 24 disposed apart from the first electrode 21, a photoelectric conversion unit 23 formed in contact with the first electrode 21 and above the charge accumulation electrode 24 with an insulation layer 82 interposed between the photoelectric conversion unit 23 and the charge accumulation electrode 24, and a second electrode 22 formed on the photoelectric conversion unit 23. The photoelectric conversion unit 23 includes a photoelectric conversion layer 23A and an inorganic oxide semiconductor material layer 23B disposed in an order of the photoelectric conversion layer 23A and the inorganic oxide semiconductor material layer 23B from the second electrode side. The inorganic oxide semiconductor material layer 23B contains indium (In) atoms, tin (Sn) atoms, titanium (Ti) atoms, and zinc (Zn) atoms.

Abstract: A method for manufacturing micro-LED displays includes depositing a first material over a substrate having a plurality of micro-LEDs such that the plurality of micro-LEDs are covered by the first material and the first material fills gaps laterally separating the micro-LEDs, removing a portion of the first material from the gaps that laterally separate the plurality of micro-LEDs to form trenches that extend to or below light-emitting layers of the micro-LEDs, depositing a second material over the substrate such that the second material covers the first material and extends into the trenches, and removing a portion of the first and second material over the plurality of micro-LEDs to expose top surfaces of the plurality of micro-LEDs and such that isolation walls positioned in the gaps between the plurality of micro-LEDs extend vertically higher than the top surface of the first material.

Abstract: An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.

Abstract: Some embodiments of the present disclosure provide a display device including a base layer, a first electrode and a second electrode extending along a first direction on the base layer, and spaced apart from each other in a second direction crossing the first direction, and light emitting elements at least partially overlapping the first electrode and at least partially overlapping the second electrode, wherein at least one of the first electrode and the second electrode includes a concavo-convex portion in which at least a portion of one of the light emitting elements overlaps with respect to a third direction that is perpendicular to the first direction and to the second direction.

Abstract: A light source device includes: a mounting board; a plurality of light-emitting parts disposed on the mounting board, each of the plurality of light-emitting parts being configured to be individually turned on; a light-shielding member defining an opening; and a light-guide member supported by the light-shielding member, the light-guide member comprising a Fresnel lens portion, wherein, in a top view, the Fresnel lens portion is located within an area of the opening of the light-shielding member. In the top view, irradiation areas of the respective light-emitting parts are at least partially separated from each other.

Abstract: A light emitting diode device including a substrate, a plurality of terminals disposed on the substrate, and a plurality of light sources disposed on the substrate, electrically connected to the plurality of terminals, and configured to emit light, in which each of the light sources includes a light emitting diode chip, and a wall surrounding side surfaces of the light emitting diode chip, at least one of the light sources includes a wavelength converter disposed on the light emitting diode chip, and at least two light sources share the wall.

Abstract: A light-emitting device includes: a light-emitting element emitting a first light having a first peak wavelength; a first wavelength conversion member contacting a side surface of the light-emitting element and including a wavelength conversion material absorbing at least a portion of the first light and emitting a second light having a second peak wavelength different from the first peak wavelength; a second wavelength conversion member on the first wavelength conversion member, the second wavelength conversion member including a wavelength conversion material absorbing at least a portion of the first light and emitting a third light having a third peak wavelength different from the first and second peak wavelengths; and a first light-reflective member on the second wavelength conversion member and at least on the light-emitting element. A continuous light-emitting surface includes a side surface of the first wavelength conversion member and a side surface of the second wavelength conversion member.

Abstract: A light-emitting device is provided. The light-emitting device includes a light-emitting diode, a reflective structure, and a package structure. The reflective structure includes a bottom surface and a lateral part. The light-emitting diode is disposed on the bottom surface. The lateral part is disposed surrounding the bottom surface and disposed on the bottom surface. The package structure is configured to package the light-emitting diode and the reflective structure. The package structure includes a first package part and a second package part. The first package part has a phosphorescent powder. An interface is between the first package part and the second package part. The interface is disposed below a top surface of the lateral part.

Abstract: This specification discloses pcLEDs in which the wavelength converting structure comprises one or more layers of phosphor particles disposed on a transparent substrate at high packing density. The particles are coated with an inorganic non-absorbing layer which mechanically stabilizes the phosphor particle layers and provides a thermally conductive connection between the phosphor particles. The wavelength converting structure is attached to a semiconductor LED die with the transparent substrate of the wavelength converting structure facing away from the die by a thin glue layer that bonds a light emitting surface of the die to the phosphor particle layers. Methods for fabricating such pcLEDs are also disclosed.

Abstract: There is presented an illumination device (244) comprising a plurality of light sources (103) emitting light along an optical axis (247); a light collector (241) adapted to collect light from the light sources, wherein the plurality of light sources (103) comprises: A first group (404) of light sources comprising a plurality of light sources, which can be driven to emit white light, a second group (405) of light sources comprising a plurality of light sources which can be driven, such as can only be driven, to emit non-white light (such as green light), wherein the plurality of light sources can be driven so that a total Duv value of light emitted from the illumination device is closer to zero than each of a first Duv value of light emitted from the illumination device originating from the first group (404) of light sources and a second Duv value of light emitted form the illumination device originating from the second group (405) of light sources, and a luminous efficacy of the second group (405) of light so

Abstract: The method of manufacturing an optical semiconductor device includes: a mounting step of placing an optical semiconductor chip on a package substrate made of ceramic; a storing step of storing the package substrate after the mounting step in a first dry atmosphere; a placing step of subjecting the optical semiconductor chip on the package substrate to a second dry atmosphere and placing a light transparent window on a joint portion of the package substrate with a joint material therebetween; and a sealing step of joining the joint portion and the light transparent window with the joint material in a low oxygen concentration atmosphere having an oxygen concentration of 1 vol % or less, thereby encapsulating the optical semiconductor chip in a confined space formed by the package substrate and the light transparent window.

Abstract: A light emitting module includes at least one light source that generates a first light having a first wavelength region, and a wavelength converter that is excited by the first light and generates a second light having a second wavelength region. The wavelength converter includes a wavelength converting material that is excited by the first light to generate a third light having a third wavelength region, and in the second light, the first light and the third light are mixed at predetermined ratios.

Abstract: A display device that can prevent deformation of a reflective electrode in a structure has an auxiliary connection pattern formed of the same materials of an anode including the reflective electrode for high reflection characteristics, so as to ensure a reliable voltage drop structure of a cathode and to improve transmission efficiency of transmission parts and luminance of emission parts in a structure having both the transmission parts and the emission parts.

Abstract: A light emitting device includes a light emitting element, a light-transmissive member, a bonding member and a light-reflective member. The bonding member is disposed between the light emitting element and the light-transmissive member, with the bonding member covering an upper surface of the light emitting element and at least a part of a lateral surface of the light emitting element. The light-reflective member covers the bonding member and a lateral surface of the light-transmissive member. The bonding member includes a surface that is flush with the lateral surface of the light-transmissive member, and an inclined surface that is inclined so as to extend toward the light-transmissive member.

Abstract: A light emitting device includes: a substrate; a package having an upward-facing surface and an inward-facing surface that define a recess; a light emitting element mounted on the upward-facing surface of the package; a first cover member including: a light transmitting layer that contacts at least a portion of a lateral surface of the light emitting element, the light transmitting layer having an upper surface that is inclined from the lateral surface of the light emitting element towards the upward-facing surface of the package, and a reflecting material-containing layer located below the light-transmitting layer; and a second cover member that contacts the inward-facing surface of the package and is separated from the light emitting element.

Abstract: A display device with improved viewing angle characteristics is provided. A display device with suppressed mixture of colors between adjacent pixels is provided. The display device includes a first coloring layer, a second coloring layer, and a structure body therebetween. The structure body has a portion closer to a display surface side than a bottom surface of the first coloring layer or a bottom surface of the second coloring layer.

Abstract: A light source device includes a semiconductor light-emitting device which emits coherent excitation light, and a wavelength conversion element which is spaced from the semiconductor light-emitting device, generates fluorescence by converting the wavelength of the excitation light emitted from semiconductor light-emitting device, and generates scattered light by scattering the excitation light. The wavelength conversion element includes a support member, and a wavelength converter disposed on the support member. The wavelength converter includes a first wavelength converter, and a second wavelength converter which is disposed around the first wavelength converter to surround the first wavelength converter in a top view of the surface of the support member on which the wavelength converter is disposed. The ratio of the intensity of fluorescence to that of scattered light is lower in the second wavelength converter than in the first wavelength converter.

Abstract: The invention relates to a method for producing a conversion element having the following steps: providing a frame having an opening; applying a sacrificial layer at least to a side surface of the at least one opening; applying a reflective layer to the sacrificial layer; introducing a conversion material into the at least one opening, the conversion material covering the reflective layer; and removing the sacrificial layer and the frame.

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.

Abstract: In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.

Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

Abstract: A light emitting device comprises: a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and wherein the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.

Abstract: A method of manufacturing a covering member includes: providing a first light-reflective member comprising a through-hole, the through-hole having first and second openings; arranging a light-transmissive resin containing a wavelength-conversion material within the through-hole; distributing the wavelength-conversion material predominantly on a side of the first opening of the through-hole within the light-transmissive resin; and after the step of distributing the wavelength-conversion material, removing a portion of the light-transmissive resin from a side of the second opening of the through-hole.

Abstract: A light emitting device including a first light emitting element that includes a first electrode having a first polarity and a second electrode having a second polarity that is different from the first polarity. The device has a circuit element that includes a main body, and first and second terminals electrically connected with one another via the main body. The device includes a first wiring having the first polarity connecting the first electrode of the first light emitting element and the first terminal, and a second wiring having the second polarity located in a layer common with a layer of the first wiring and including a portion elongated between the first terminal and the second terminal in a bottom view. An upper surface of the main body is positioned at a distance below an interface between a lower surface of the first wiring and the first electrode.

Abstract: A first LED with a first LED sidewall is disclosed. A second LED with a second LED sidewall facing the first LED sidewall is also disclosed. A first dynamic optical isolation material between the first LED sidewall and the second LED sidewall and configured to change an optical state based on a state trigger such that a light behavior at the first LED sidewall for a light emitted by one of the first LED and the second LED is determined by the optical state, is also disclosed.

Abstract: A light emitting diode (LED) package structure include an electrically-insulated frame, a trough, a LED chip, a fluorescent colloid and at least two spacing members. The electrically-insulated frame has a surface with four corners. The trough is recessed in the surface. The LED chip is located in the trough. The fluorescent colloid is filled within the trough to cover the LED chip. The spacing members protrude from two of the four corners on the surface, wherein a glue escape gap is defined between each spacing member and a boundary of the trough.

Abstract: The present invention relates to a process for manufacturing an optoelectronic device, wherein a layer of a formulation containing a silazane polymer and a wavelength converting material is applied to an optoelectronic device precursor, precured by exposure to radiation and then cured. There is further provided an optoelectronic device, preferably a light emitting device (LED) or a micro-light emitting device (micro-LED), which is prepared by said manufacturing process.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: A wavelength-converting member includes a wavelength-converting layer, a heat-dissipating component, and a securing member. The wavelength-converting layer has an upper surface, a lower surface, and one or more lateral surfaces with each of the one or more lateral surfaces of the wavelength-converting layer defining an inclined surface inclined at an acute angle with respect to the lower surface of the wavelength-converting layer. The wavelength-converting layer includes a thermally conductive part, and a fluorescent material containing part in contact with the thermally conductive part. The wavelength-converting layer is mounted on the heat-dissipating component. The securing member is secured to the heat-dissipating component. The securing member presses the inclined surface of each of the one or more lateral surfaces such that the wavelength-converting layer is secured to the heat-dissipating component.

Abstract: Provided is a light-emitting element which includes a first electrode, a second electrode over the first electrode, and first and second light-emitting layers therebetween. The first light-emitting layer contains a first host material and a first light-emitting material, and the second light-emitting layer contains a second host material and a second light-emitting material. The first light-emitting material is a fluorescent material, and the second light-emitting material is a phosphorescent material. The level of the lowest triplet excited state (T1 level) of the first light-emitting material is higher than the T1 level of the first host material. A light-emitting device, an electronic device, and a lighting device including the light-emitting element are further provided.

Abstract: A display apparatus includes a support substrate, a plurality of light emitting structures regularly arranged on the support substrate, and a wavelength conversion part disposed on the plurality of light emitting structures. The wavelength conversion part includes light transmitting portions and blocking portions, the light transmitting portions being disposed on the light emitting structures, respectively, and each of the light transmitting portions including a phosphor for converting a wavelength of light emitted from the corresponding light emitting structure. The support substrate includes a plurality of conductive patterns electrically connected to the light emitting structures, and the light emitting structures are coupled to the plurality of conductive patterns.

Abstract: A lighting system is for providing photosynthetically stimulating artificial light to a specified target area where such artificial light is needed. The lighting system has at least one luminaire with a light source. The luminaire emits photosynthetically stimulating light at a narrow beam angle of less than and including 20° (FWHM). The lighting system has means for positioning the at least one luminaire at a distance of minimum 20 m from the specified target area measured in a light beam direction, and the luminaire is adapted to illuminate the specified target area with a minimum photosynthetic photon flux density of 140 ?mol/s/m2. A method is for improving the growth conditions for plants in need of light at a specified target area by exposing the plants to a photosynthetically artificial light from a light source.

Abstract: The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package, in other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.

Abstract: A light emitting diode having an improved heat dissipation effect includes a light source unit emitting a light to a front surface and including a light emitting part, a first electrode pad, and a second electrode pad. The light emitting diode further includes a lead frame unit disposed on a rear surface of the light source unit and including first and second lead terminals respectively connected to the first and second electrode pads. The light emitting diode also includes at least one of the first and second lead terminals includes an upper conductive layer, an intermediate conductive layer, and a lower conductive layer which are disposed on different layers and electrically connected to one another.

Abstract: Described are light generating devices employing ultraviolet (UV) light emitting diodes and one or more UV active materials, such as UV reflective materials, UV scattering materials, and UV transparent materials. A UV light generation system, may include a plurality of UV light emitting diodes arranged across a surface having a diffuse UV reflective layer. The UV light generation system may be arranged to enclose a fluid pathway or may be arranged as a liner of a container or vessel for use in disinfecting, purifying, or sterilizing fluid, particles or objects in the fluid pathway, container, or vessel by exposure of the fluid, particles or objects to UV light generated by the UV light emitting diodes.

Abstract: A light emitting device comprises a light emitting element having a light emission peak wavelength in a range of 400 nm or more and 490 nm or less and a first fluorescent material having a light emission peak wavelength in a range of 570 nm or more and 680 nm or less, and emits light having a correlated color temperature being 1,950 K or less, an average color rendering index Ra being 51 or more, a full width at half maximum of a light emission peak having a maximum light emission intensity in a light emission spectrum of the light emitting device being 110 nm or less, and a first glare index Ls1/L that is a ratio of a first effective radiance Ls1 to a luminance L being 0.493 or less, wherein Ls1 and L are as defined in the disclosure.

Abstract: Provided are a light guide film, a backlight unit, and a display device. Light guide portions are disposed in holes of a reflection plate on which light sources are disposed, and a light guide film is directly disposed on the reflection plate and the light guide portions to provide a light guiding function and a light shielding function. Therefore, a method of facilitating implementation of a backlight unit with a small thickness, which satisfies image quality is provided. Further, each of the light shielding patterns has different reflectances in different areas, thereby increasing the amount of light supplied to an area between light sources. Therefore, a backlight unit with a reduced number of light sources and improved image quality may be provided.

Abstract: A lamp includes an extended planar light source, and an optical element arranged with the light source, wherein the optical element comprises an outer surface having an indented cusp substantially over the light source. A lamp includes an extended planar light source, and an optical element arranged with the light source, wherein the optical element comprises an outer surface having a portion at a peripheral edge comprising a curvature configured to redirect light emitted from the light source by total internal reflection.

Abstract: A method of manufacturing a light emitting device that comprises a first cover member and a second cover member, includes: providing a package that comprises a substrate, a plurality of resin walls, and a recessed part defined by an upper surface of the substrate and lateral surfaces of the plurality of resin walls, wherein the substrate includes a grooved part surrounding a first region; mounting a light emitting element in the first region; forming the second cover member in a region between the lateral surfaces defining the recessed part to an upper edge of an outer perimeter of the grooved part; forming the first cover member, which comprises depositing an uncured resin on the second cover member, and allowing the uncured resin to flow into a groove of the grooved part; and forming a light transmitting member on the first cover member and the light emitting element.

Abstract: In an embodiment a measuring unit includes a light emitting LED component including a housing occupying a housing surface G and an LED chip located within the housing, the LED chip including a light emitting light surface L and being configured to emit light; a photodetector configured to detect reflected light reflected from a measured object originating from the LED component and output a measurement signal dependent on a detection of the reflected light; and an integrated circuit configured to evaluate the measurement signal, wherein the LED component, the photodetector, and the integrated circuit are combined into an integrated unit; and a conversion layer disposed in the housing and located above the LED chip, the conversion layer configured to convert the light into multiband light, wherein a ratio L/G of is greater than or equal to 0.8, and wherein the measuring unit is configured to optically measure at least one property of the measured object.

Abstract: The present invention relates to the technical field of plant cultivation through artificial light, and particularly provides a light environment method for plant cultivation through full-artificial light to provide a full-artificial light source for plant growth. The light source includes a light wave with a waveband of 620 nm to 760 nm, and the number of photons of the light wave of 620 nm to 760 nm accounts for 64% to 76% of the total number of photons of the light source. Compared with traditional light sources, such as existing fluorescent lamps and high-pressure sodium lamps, the present invention adopting a mode of light source proportion and light source combination can greatly improve the yield of the plant.

Abstract: A method includes mounting a ceramic phosphor on an acrylic-free and metal-containing catalyst-free tacky layer of a dicing tape, dicing the ceramic phosphor from the dicing tape into ceramic phosphor plates, removing the ceramic phosphor plates from the dicing tape, and attaching the ceramic phosphor plates on light-emitting device (LED) dies.

Abstract: An optoelectronic device and a method for producing an optoelectronic device are disclosed. In an embodiment a method includes arranging an optoelectronic semiconductor chip with its top side towards a surface of a carrier, forming a recess at the surface of the carrier such that the recess surrounds the optoelectronic semiconductor chip, arranging a mold compound in the recess and above the surface of the carrier such that the optoelectronic semiconductor chip is embedded into the mold compound, wherein a bottom side of the optoelectronic semiconductor chip remains at least partially not covered by the mold compound, removing the carrier and arranging a wavelength-converting material above the surface of the carrier before arranging the optoelectronic semiconductor chip, wherein the wavelength-converting material is perforated while forming the recess.

Abstract: A surface mount electronic device providing an electrical connection between an integrated circuit (IC) and a printed circuit board (PCB) is provided and includes a die and a dielectric material formed to cover portions of the die. Pillar contacts are electrically coupled to electronic components in the die and the pillar contacts extend from the die beyond an outer surface of the die. A conductive ink is printed on portions of a contact surface of the electronic device package and forms electrical terminations on portions of the dielectric material and electrical connector elements that connect an exposed end surface of the pillar contacts to the electrical terminations.

Abstract: Solid-state lighting devices and more particularly light-emitting devices for horticulture applications are disclosed. Light-emitting devices are disclosed with aggregate emissions that target chlorophyll absorption peaks while also providing certain broader spectrum emissions between the chlorophyll absorption peaks. The aggregate emissions may be provided by light-emitting diodes (LEDs) that emit wavelengths that correspond with certain chlorophyll absorption peaks and lumiphoric materials that provide broader spectrum emissions. The aggregate emissions are configured to have reduced emissions from lumiphoric materials in ranges close to certain chlorophyll absorption peaks, such as above 600 nanometers (nm). In this regard, light-emitting devices according to the present disclosure provide the ability to efficiently target specific chlorophyll absorption peaks for plant growth while also providing suitable lighting for occupants in a horticulture environment.

Abstract: A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity.

Abstract: A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

Abstract: A display substrate and a manufacturing method thereof are provided. The display substrate includes a base substrate, as well as a first conductive layer, an organic functional layer and a second conductive layer which are on the base substrate sequentially, and the organic functional layer includes a carrier injection layer including a first carrier injection layer portion and a second carrier injection layer portion which are in a first sub-pixel area and a second sub-pixel area respectively; the display substrate further includes a spacer which separates the first carrier injection layer portion and the second carrier injection layer portion, and the carrier injection layer further includes a third carrier injection layer portion which is separated from the first carrier injection layer portion and the second carrier injection layer portion respectively.