Comprising Luminescent Material (e.g., Fluorescent) (epo) Patents (Class 257/E33.061)
  • Patent number: 10001261
    Abstract: A light source apparatus according to the present invention includes a phosphor wheel having a phosphor disposed in an annular shape on a disk-shaped base material, the phosphor serving to emit fluorescent light from excitation light, thereby forming an excitation light source having a predetermined color, and the phosphor having a discontinuous portion in a part of the annular shape, an excitation light source for emitting the excitation light with which a passage position of the circular phosphor is irradiated with respect to the phosphor wheel to be rotatively driven by the wheel motor, and a controller that controls light emission of the light source and the excitation light source synchronously with a position of the discontinuous portion with respect to an irradiation position of the excitation light.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: June 19, 2018
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shinji Yagyu, Nobutaka Kobayashi, Akihiro Yamada, Hiroshi Kida
  • Patent number: 9799795
    Abstract: In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: October 24, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Jürgen Moosburger, Axel Kaltenbacher, Matthias Wolf, Georg Dirscherl
  • Patent number: 9034674
    Abstract: Light-emitting elements such as LEDs are associated with light-converting material such as phosphor and/or other material. A donor substrate comprising the light-converting and/or other material is suitably placed relative to a target substrate associated with the light-emitting elements. A laser or other energy source is then used to transfer the light-converting and/or other material in a pattern via writing or masking from the donor substrate to the target substrate in accordance with the pattern. Addressability and targetability of the transfer process facilitates precise patterning of the target substrate.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: May 19, 2015
    Assignee: Quarkstar LLC
    Inventors: Ingo Speier, Robert C. Gardner, Louis Lerman, Chris Lowery, Allan Brent York
  • Patent number: 9035286
    Abstract: A color light-emitting diode using a blue light component to produce red light and green light is disclosed. A blue-light emitting material is provided between a cathode layer and an anode layer for emitting the blue light component. A light re-emitting layer has a first material in a first diode section arranged to produce a red light component in response to the blue light component, and a second material in a second diode section arranged to produce a green light component in response to the blue light component. A transparent material in a third diode section allows part of the blue light component to transmit through. The anode layer is partitioned into three electrode portions separately located in the three diode sections, so that the red, green and blue light components in the diode sections can be separately controlled.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: May 19, 2015
    Assignee: AU Optronics Corporation
    Inventors: Kuei-Bai Chen, Chia-Hao Li, Chen-Hsien Liao
  • Patent number: 9029898
    Abstract: The present invention relates to a light emitting diode (LED). The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: May 12, 2015
    Assignee: Formosa Epitaxy Incorporation
    Inventors: Chi-Chih Pu, Chen-Hong Lee, Tzu-Hsiang Wang, Sheng-Hung Hsu, Wei-Kang Cheng, Shyi-Ming Pan
  • Patent number: 9024349
    Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
    Type: Grant
    Filed: January 22, 2007
    Date of Patent: May 5, 2015
    Assignee: Cree, Inc.
    Inventors: Ashay Chitnis, James Ibbetson, Arpan Chakraborty, Eric J. Tarsa, Bernd Keller, James Seruto, Yankun Fu
  • Patent number: 9024339
    Abstract: The present invention provides a light emitting diode which comprises a substrate, a light emitting layer including an N-type semiconductor layer and a P-type semiconductor layer formed on the substrate, and a wavelength conversion layer formed on the light emitting layer or on the back of the substrate. The wavelength conversion layer is formed of a Group III nitride semiconductor doped with rare earth elements. The rare earth elements include at least one of Tm, Er and Eu. According to a light emitting diode of the present invention, a desired color can be implemented in various ways by converting the wavelength of primary light emitted from a light emitting chip. Thus, the reliability and quality of products can be improved due to the uniform emission of light with a desired color. Further, since the existing semiconductor process can be utilized in the present invention, its fabrication process can be simplified, process cost and time can be reduced, and the compact products can be obtained.
    Type: Grant
    Filed: June 23, 2006
    Date of Patent: May 5, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventor: Kyoung Hoon Kim
  • Patent number: 9012938
    Abstract: Apparatuses and methods for producing light emitting devices maximizing luminous flux output are disclosed. In one possible embodiment, a light emitting device comprises a substrate and a reflective layer at least partially covering the substrate. The reflective layer is non-yellowing, and may be substantially light transparent. One or more light emitting diode (LED) chips are disposed on the substrate. The light emitting device may emit white light. The reflective layer may comprise a silicone carrier with light reflective particles dispersed in the silicone carrier. A light diffusion lens may also be disposed on the substrate and surrounding the LED chips. Furthermore, one or more microspheres, light scattering particles, and/or phosphor particles may be dispersed in the lens. In one possible method for producing a light emitting device, a substrate is provided.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: April 21, 2015
    Assignee: Cree, Inc.
    Inventors: Thomas Cheng-Hsin Yuan, Bernd Keller, Ronan Le Toquin, Theodore Lowes
  • Patent number: 9012932
    Abstract: A white LED assembly includes a string of series-connected blue LED dice mounted on a substrate. The substrate has a plurality of substrate terminals. A first of the substrate terminals is coupled to be a part of first end node of the string. A second of the substrate terminals is coupled to be a part of an intermediate node of the string. A third of the substrate terminals is coupled to be a part of a second end node of the string. Other substrate terminals may be provided and coupled to be parts of corresponding other intermediate nodes of the string. A single contiguous amount of phosphor covers all the LED dice, but does not cover any of the substrate terminals. In one example, the amount of phosphor contacts the substrate and has a circular periphery. All the LEDs are mounted to the substrate within the circular periphery.
    Type: Grant
    Filed: May 22, 2014
    Date of Patent: April 21, 2015
    Assignee: Bridgelux, Inc.
    Inventors: Tao Xu, Michael Solomensky
  • Patent number: 9012945
    Abstract: LED dies, emitting blue light, are provided on a first support substrate to form a light emitting layer. A mixture of a transparent binder, yellow phosphor powder, magenta-colored glass beads, and cyan-colored glass beads is printed over the light emitting surface. The mixture forms a wavelength conversion layer when cured. The beads are sized so that the tops of the beads protrude completely through the conversion layer. When the LED dies are on, the combination of the yellow phosphor light and the blue LED light creates white light. When the LEDs are off, white ambient light, such as sunlight, causes the conversion layer to appear to be a mixture of yellow light, magenta light, and cyan light. The percentage of the magenta and cyan beads in the mixture is selected to create a desired off-state color, such as a neutral color, of the conversion layer for aesthetic purposes.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: April 21, 2015
    Assignee: Nthdegree Technologies Worldwide Inc.
    Inventor: William J. Ray
  • Patent number: 9006869
    Abstract: A light emitting device package is provided comprising a light emitting device including at least one light emitting diode and a body including a first lead frame on which the light emitting device is mounted and a second lead frame spaced apart from the first lead frame, wherein at least one of the first and second lead frames is extending to a bending region in a first direction by a predetermined length on the basis of an outer surface of the body and is bent in a second direction intersecting the first direction.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: April 14, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: JaeJoon Yoon
  • Patent number: 9006753
    Abstract: An electroluminescent display comprising semiconductor nanocrystals, wherein the semiconductor nanocrystals are selected to emit light at a predetermined wavelength and are disposed in a predetermined pattern. In certain embodiments, semiconductor nanocrystals that emit light at different predetermined wavelengths are disposed in the display to create a predetermined multi-color pattern.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: April 14, 2015
    Assignee: QD Vision, Inc.
    Inventors: Seth Coe-Sullivan, Gregory V. Moeller, Joseph Carr
  • Patent number: 9006761
    Abstract: A light-emitting device includes a substrate (4), a light-emitting element (10) mounted on the substrate (4), a first resin (12) disposed to cover an upper portion of the light-emitting element (10), a second resin (14) disposed to cover a lower portion of the light-emitting element (10), a first phosphor (18) contained in the first resin (12), and a second phosphor (20) contained in the second resin (14). The first phosphor (18) converts light emitted directly from the light-emitting element (10) into a first phosphor-converted light having a wavelength longer than that of the light emitted directly from the light-emitting element (10) and emits the first phosphor-converted light, and the second phosphor (20) converts the light emitted directly from the light-emitting element (10) into a second phosphor-converted light having a wavelength longer than that of the first phosphor-converted light and emits the second phosphor-converted light.
    Type: Grant
    Filed: August 21, 2009
    Date of Patent: April 14, 2015
    Assignee: Citizen Electronics Co., Ltd.
    Inventor: Nodoka Oyamada
  • Patent number: 8994030
    Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akihiro Kojima, Hideto Furuyama, Miyoko Shimada, Yosuke Akimoto, Hideyuki Tomizawa, Yoshiaki Sugizaki
  • Patent number: 8994045
    Abstract: A lighting device comprising a light emitter chip, a reflective cup and a lumiphor positioned between the chip and the cup. Also, a lighting device comprising a light emitter chip, a wire bonded to a first surface of the chip and a lumiphor which faces a second surface of the chip. Also, a lighting device comprising a light emitter chip, and a lumiphor, a first surface of the chip facing a first region of the lumiphor, a second surface of the chip facing a second region of the lumiphor. Also, a lighting device comprising a light emitter chip and first and second lumiphors, a first surface of the chip facing the second lumiphor, a second surface of the chip facing the first lumiphor. Also, methods of making lighting devices.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: March 31, 2015
    Assignee: Cree, Inc.
    Inventor: Gerald H. Negley
  • Patent number: 8994050
    Abstract: A method of transferring a uniform phosphor layer on an article and a light-emitting structure having a uniform phosphor layer. The method includes disposing a surface of the article in a proximity of a carrier having the uniform phosphor layer on a surface thereon, and causing the uniform phosphor layer to be secured to the surface of the article. Therefore, the uniform phosphor layer is secured to the articles according to a contour of the article.
    Type: Grant
    Filed: April 11, 2011
    Date of Patent: March 31, 2015
    Assignee: ARCHOLUX, Inc.
    Inventor: Peiching Ling
  • Patent number: 8985793
    Abstract: An illumination device with a toning function in which possibility of moisture and dust intruding into the case is reduced with a simple mechanism is realized.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: March 24, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shinji Osaki, Toyonori Uemura, Toshio Hata, Junichi Somei, Yuji Kozuma, Kenji Hatazawa, Tomokazu Nada, Makoto Agatani, Shinya Ishizaki, Tatsuya Morioka, Makoto Matsuda
  • Patent number: 8987023
    Abstract: A light emitting device includes: a substrate; a light emitting element disposed on the substrate; a wavelength conversion unit disposed on the substrate to cover at least an upper surface of the light emitting element; and a reflection unit formed to cover a side surface and a lower surface of the substrate and having a resin and a reflective filler dispersed in the resin. Light emitting devices having uniform characteristics can be obtained by minimizing a chromaticity distribution of white light with respect to the different light emitting devices.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Tsuyoshi Tsutsui
  • Patent number: 8987764
    Abstract: According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, n-side electrode and a resin layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided on the semiconductor layer on the second face side. The n-side electrode is provided on the semiconductor layer on the second face side. The resin layer is provided on the first face and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the first face and four side faces provided along an outer edge of the first face and connected to the top surface, the resin layer including a scattering substance scattering the light emitted from the light emitting layer.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: March 24, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideyuki Tomizawa, Akihiro Kojima, Miyoko Shimada, Yosuke Akimoto, Yoshiaki Sugizaki, Hideto Furuyama
  • Patent number: 8981411
    Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: March 17, 2015
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Shu-Ting Hsu, Yen-Wen Chen, Chien-Yuan Wang, Ru-Shi Liu, Min-Hsun Hsieh
  • Patent number: 8981392
    Abstract: There is provided a light emitting device package including: a package substrate; a blue light emitting device and a green light emitting device mounted on the package substrate; a flow prevention part formed on the package substrate and substantially enclosing the blue light emitting device; and a wavelength conversion part including a red wavelength conversion material and formed on a region defined by the flow prevention part to cover the blue light emitting device, so that white light having a high degree of color reproducibility may be emitted thereby.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: March 17, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Ho Young Song
  • Patent number: 8981412
    Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: March 17, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Koizumi, Yasuhide Okada, Susumu Obata, Tomomichi Naka, Kazuhito Higuchi, Kazuo Shimokawa, Yoshiaki Sugizaki, Akihiro Kojima
  • Patent number: 8981389
    Abstract: An illumination device includes a base, a light-emitting module, a first layer, and a second layer. The light-emitting module is disposed on the base for generating a progressive-type light-emitting intensity. The first layer encapsulates the light-emitting module. The second layer encloses the first layer. The second layer has a progressive-type thickness corresponding to the progressive-type light-emitting intensity, and both the progressive-type light-emitting intensity and the progressive-type thickness are decreased or increased gradually, thus the progressive-type light-emitting intensity can be transformed into the same light-emitting intensity through the progressive-type thickness of the second layer.
    Type: Grant
    Filed: July 25, 2012
    Date of Patent: March 17, 2015
    Assignees: Lite-On Electronics (Guangzhou) Limited, Lite-On Technology Corporation
    Inventors: Chia-Hao Wu, Chun-Chang Wu
  • Patent number: 8975614
    Abstract: Wavelength converters for solid state lighting devices, and associated systems and methods. A system in accordance with a particular embodiment includes a solid state radiative semiconductor structure having a first region and a second region. The first region is positioned to receive radiation at a first wavelength and has a first composition and an associated first bandgap energy. The second region is positioned adjacent to the first region to receive energy from the first region and emit radiation at a second wavelength different than the first wavelength. The second region has a second composition different than the first composition, and an associated second bandgap energy that is less than the first bandgap energy.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: March 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Martin F. Schubert, Vladimir Odnoblyudov
  • Patent number: 8975648
    Abstract: A light emitting device includes a first resin layer which is made of transparent resin and provided outside a solid-state light-emitting element mounted on a mounting substrate; and a second resin layer which is provided outside the first resin layer and made of transparent resin that contains a phosphor which is excited with a luminescence wavelength of the solid-state light-emitting element, wherein when the refractive index of the solid-state light-emitting element is set to be N1, the refractive index of the first resin layer is set to be N2, and the refractive index of the second resin layer is set to be N3, the relationship of N1?N2?N3?1 is established.
    Type: Grant
    Filed: February 4, 2011
    Date of Patent: March 10, 2015
    Assignee: Sony Corporation
    Inventors: Yukitoyo Oshima, Takehito Hirose, Tadashi Kato, Yurika Ishihara
  • Patent number: 8975654
    Abstract: A light-reflective conductive particle for an anisotropic conductive adhesive used for connecting a light-emitting element to a wiring board by anisotropic conductive connection includes a core particle covered with a metal material and a light reflecting layer formed of a light-reflective inorganic particle having a refractive index of 1.52 or greater on the surface of the core particle. Examples of the light-reflective inorganic particles having a refractive index of 1.52 or greater include a titanium oxide particle, a zinc oxide particle, and an aluminum oxide particle. The coverage of the light reflecting layer on the surface of the core particle is 70% or more.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: March 10, 2015
    Assignee: Dexerials Corporation
    Inventors: Hidetsugu Namiki, Shiyuki Kanisawa, Hideaki Umakoshi
  • Patent number: 8969906
    Abstract: In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.
    Type: Grant
    Filed: April 15, 2013
    Date of Patent: March 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 8963192
    Abstract: According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: February 24, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tadaaki Hosokawa, Shuji Itonaga
  • Patent number: 8963188
    Abstract: A light emitting diode (LED) package is provided. The LED package includes a printed circuit board (PCB), an electrode pad, an LED, a wire, and first and second moldings. The electrode pad and the LED are formed on the PCB. The wire electrically connects the LED with the electrode pad. The first molding is formed on the LED and the second molding is formed on the first molding.
    Type: Grant
    Filed: October 25, 2006
    Date of Patent: February 24, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bo Geun Park
  • Patent number: 8963187
    Abstract: A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: February 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Tae Kim, Dong Yeoul Lee
  • Patent number: 8962361
    Abstract: A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: February 24, 2015
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Kirstin Petersen, Frank Baumann, Dominik Eisert, Hailing Cui
  • Patent number: 8957428
    Abstract: The present invention relates to the field of a light emitting device (1), comprising a light emitting diode (2) arranged on a submount (3), said device having a lateral circumference surface (6) and a top surface (8), and an optically active coating layer (7), said coating layer (7): covering along at least a part of said circumference surface (6), extending from the submount (3) to said top surface (8), and essentially not covering the top surface (8). A method for producing the device is also disclosed.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: February 17, 2015
    Assignee: Koninklijke Philips N.V.
    Inventors: Hendrik J. B. Jagt, Christian Kleynen, Aldegonda L. Weijers
  • Patent number: 8956894
    Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: February 17, 2015
    Assignee: Soraa, Inc.
    Inventors: James W. Raring, Eric M. Hall, Mark P. D'Evelyn
  • Patent number: 8957438
    Abstract: An LED includes a first pedestal and may be fabricated by coating a first phosphor layer on the LED, thinning the first phosphor layer to expose the first pedestal, forming a second pedestal on the first pedestal, coating a second phosphor layer and thinning the second phosphor layer to expose the second pedestal. Alternatively, an LED having a pedestal is coated with a first phosphor layer, coated with a second phosphor layer and then planarized to expose the pedestal. Related structures are also provided.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: February 17, 2015
    Assignee: Cree, Inc.
    Inventors: Jasper Cabalu, Alan Wellford Dillon
  • Patent number: 8956965
    Abstract: A method of manufacturing a display panel having a display part and a terminal part each formed on a different area on a TFT substrate, comprising: a step of forming the display part on the TFT substrate; a step of forming a conductive layer of a conductive metal oxide or a metal on an area where the terminal part is to be formed; a step of forming a chemical vapor deposition layer of an inorganic compound by a chemical vapor deposition method so that the chemical vapor deposition layer covers the display part and comes into contact at least with an upper surface of the conductive layer and so that the upper surface of the conductive layer alters; and a step of removing a portion of the chemical vapor deposition layer on the conductive layer.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: February 17, 2015
    Assignee: Panasonic Corporation
    Inventor: Takashi Osako
  • Patent number: 8952399
    Abstract: Various embodiments of light emitting devices with efficient wavelength conversion and associated methods of manufacturing are described herein. In one embodiment, a light emitting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region is configured to produce a light via electroluminescence. The light emitting device also includes a conversion material on the second semiconductor material, the conversion material containing aluminum gallium indium phosphide (AlGaInP) doped with an N-type dopant.
    Type: Grant
    Filed: June 8, 2011
    Date of Patent: February 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Vladimir Odnoblyudov, Martin F. Schubert
  • Patent number: 8952389
    Abstract: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.
    Type: Grant
    Filed: May 14, 2012
    Date of Patent: February 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joon-seop Kwak, Jae-hee Cho
  • Patent number: 8946734
    Abstract: A method for making a light emitting module includes: a. providing a flexible substrate; b. forming a plurality of rigid portions in the flexible substrate; c. forming an electrically conductive layer on the rigid portions, the electrically conductive layer having several electrodes apart from each other; d. arranging a plurality of LED dies on the electrically conductive layer with each LED die striding over and electrically connected to two neighboring electrodes; e. forming an encapsulating layer to cover the LED dies; and f. cutting through the flexible substrate. At least one of above steps b, c, d, e is performed by a roll applying process.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: February 3, 2015
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventor: Hsing-Fen Lo
  • Patent number: 8940561
    Abstract: Methods are disclosed including heating an optical element. An optical material is applied to the heated optical element to provide a conformal layer that is cured via the thermal energy in the heated optical element.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: January 27, 2015
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, Nathaniel O. Cannon
  • Patent number: 8941135
    Abstract: A light emitting device includes: at least one light emitting component (LEC) comprising a light-emitting face having a longest linear dimension D1; at least one wavelength-converting consolidated monolithic component (WCC) having a light-receiving face, a light-emitting face, and a peripheral edge. The WCC is radiationally linked to and spaced apart from the LEC at a distance D2, D2 being less than D1, wherein a projection edge of the light-emitting face of the LEC and the peripheral edge of the WCC define a shortest distance D3 therebetween, wherein a surface area of the light-receiving face of the WCC is at least 120% of that of the light-emitting face of the LEC, and the LEC and WCC are positioned relative to each other to satisfy D3/D2?1.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: January 27, 2015
    Assignee: Nitto Denko Corporation
    Inventors: Hironaka Fujii, Toshitaka Nakamura
  • Patent number: 8933481
    Abstract: A lead frame assembly includes a surrounding frame and a plurality of lead frame sets arranged in a matrix. Each lead frame set includes spaced-apart first and second lead frames and a connecting structure interconnecting one of the lead frame sets to an adjacent lead frame set. Each lead frame set is further connected to the surrounding frame through the connecting structure thereof. A plurality of insulated bars are spacedly formed on a lead frame panel. Each insulated bar covers a corresponding row of the lead frame sets and exposes bottom surfaces of the first and second lead frames. Each insulated bar further covers portions of the surrounding frame that are adjacent to two opposite outermost ones of the lead frame sets.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: January 13, 2015
    Assignees: Lite-On Electronics (Guangzhou) Limited, Lite-On Technology Corp.
    Inventors: Chiou-Yueh Wang, Chen-Hsiu Lin, Shih-Chang Hsu
  • Patent number: 8932887
    Abstract: A method for manufacturing an LED (light emitting diode) with transparent ceramic is provided, which includes: adding quantitative fluorescent powder into transparent ceramic powder, wherein the doped ratio of the fluorescent powder is 0.01-100 wt %; preparing the fluorescent transparent ceramic using ceramic apparatus and process, after fully mixing the raw material; assembling the prepared fluorescent transparent ceramic and a semiconductor chip to form the LED device. The method assembles the fluorescent transparent ceramic and a semiconductor chip to form the LED device by replacing the fluorescent powder layer and the epoxy resin package casting of the traditional LED with fluorescent transparent ceramic. The fluorescent transparent ceramic is used as the package cast and fluorescent material, and the LED device manufactured through the method has more excellent performance.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: January 13, 2015
    Assignee: Bright Crystals Technology, Inc.
    Inventors: Muyun Lei, Zhen Li, Zailiang Lou, Yanmin Zhao, Qinghai Song, Yongliang Yang
  • Patent number: 8932888
    Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.
    Type: Grant
    Filed: September 6, 2011
    Date of Patent: January 13, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Ralph Wagner
  • Patent number: 8928019
    Abstract: There is herein described a phosphor for use in LED applications and particularly in phosphor-conversion LEDs (pc-LEDs). The phosphor has a composition represented by (Y1-xCex)3(Al1-yScy)5O12 wherein 0<x?0.04 and 0<y?0.6 and can be as applied to an LED as a transparent sintered ceramic or used in a powder form. By adjusting the composition of the phosphor, the phosphor can be made to emit light in the green to yellow regions of the visible spectrum upon excitation by a blue-emitting InGaN LED.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: January 6, 2015
    Assignee: OSRAM SYLVANIA Inc.
    Inventor: Yi Zheng
  • Patent number: 8928102
    Abstract: The present application disclosed various embodiments of improved performance optically coated semiconductor devices and the methods for the manufacture thereof and includes at least one semiconductor wafer having at least a first surface, a first layer of low density, low index of refraction optical material applied to at least the first surface of the semiconductor wafer, and a multi-layer optical coating applied to the first layer of low density, low index of refraction material, the multi-layer optical coating comprising alternating layers of low density, low index of refraction materials and high density, high index of refraction materials.
    Type: Grant
    Filed: April 12, 2013
    Date of Patent: January 6, 2015
    Assignee: Newport Corporation
    Inventor: Jamie Knapp
  • Patent number: 8921878
    Abstract: A light emitting device according to one embodiment includes a board; a light emitting element mounted on the board, emitting light having a wavelength of 250 nm to 500 nm; a red fluorescent layer formed on the element, including a red phosphor expressed by equation (1), having a semicircular shape with a diameter r; (M1?x1Eux1)aSibAlOcNd??(1) (In the equation (1), M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al (Aliminum), rare-earth elements, and IVB group elements), an intermediate layer formed on the red fluorescent layer, being made of transparent resin, having a semicircular shape with a diameter D; and a green fluorescent layer formed on the intermediate layer, including a green phosphor, having a semicircular shape. A relationship between the diameter r and the diameter D satisfies equation (2): 2.0r(?m)?D?(r+1000)(?m).
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: December 30, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Iwao Mitsuishi, Kunio Ishida, Yumi Fukuda, Aoi Okada, Naotoshi Matsuda, Keiko Albessard, Shinya Nunoue, Masahiro Kato
  • Patent number: 8921876
    Abstract: A lighting device includes a semiconductor light emitting device (LED) configured to emit light having a first peak wavelength upon the application of a voltage thereto, an element in adjacent, spaced-apart relationship with the LED, and a pattern of discrete lumiphor-containing regions on a surface of, or within, the element. The lumiphor-containing regions are configured to receive light emitted by the LED and convert at least a portion of the received light to light having a longer wavelength than the first peak wavelength. The remote element may be a lens, a reflective element, or a combination thereof.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: December 30, 2014
    Assignee: Cree, Inc.
    Inventors: Antony P. van de Ven, Gerald H. Negley
  • Patent number: 8921140
    Abstract: Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance energy transfer (FRET), so that the modified quantum dots have a plurality of photophysical properties. The FRET and charge transfer pathways operate independently, providing for two channels of control for varying luminescence of quantum dots having the same innate properties.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: December 30, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Igor L. Medintz, W. Russ Algar, Michael H. Stewart, Kimihiro Susumu
  • Patent number: 8916887
    Abstract: A light emitting device package of the embodiment includes a body including cavities; first and second lead electrodes disposed in the cavity of the body; a light emitting device disposed in the cavities, electrically connected to at least one of the first and second lead electrodes and emitting a first main peak wavelength in the range of 410˜460 nm; and a first resin layer having first phosphor on the light emitting device, wherein the first phosphor of the first resin layer emits light of a second main peak wavelength in the range of 461 nm˜480 nm by exciting some light having the first main peak wavelength, and the first and second main peak wavelengths have the wavelength different from each other and contain the light having the same color.
    Type: Grant
    Filed: February 8, 2012
    Date of Patent: December 23, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Tae Jin Kim
  • Patent number: 8912021
    Abstract: A system for fabricating light emitting diode (LED) dice includes a wavelength conversion layer contained on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The system also includes a curing apparatus configured to reduce the adhesiveness of the adhesive layer to facilitate removal of the wavelength conversion layer from the substrate, and an attachment apparatus configured to remove the wavelength conversion layer from the substrate and to attach the wavelength conversion layer to a light emitting diode (LED) die. A method for fabricating light emitting diode (LED) dice includes the steps of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: December 16, 2014
    Assignee: SemiLEDS Optoelectronics Co., Ltd.
    Inventors: Jui-Kang Yen, De-Shuo Chen