Abstract: In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.

Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

Abstract: A light emitting device comprises: a solid-state light emitter which generates blue excitation light with a dominant wavelength from 440 nm to 470 nm; a yellow to green photoluminescence material which generates light with a peak emission wavelength from 500 nm to 575 nm; a broadband orange to red photoluminescence material which generates light with a narrowband peak emission wavelength from 580 nm to 620 nm; and a narrowband red manganese-activated fluoride phosphor which generates light with a peak emission wavelength from 625 nm to 635 nm. The device generates white light with a spectrum having a broad emission peak from about 530 nm to about 600 nm and a narrow emission peak and wherein the ratio of the peak emission intensity of the broad emission peak to the peak emission intensity of the narrow emission peak is at least 20%.

Abstract: A method of manufacturing a covering member includes: providing a first light-reflective member comprising a through-hole, the through-hole having first and second openings; arranging a light-transmissive resin containing a wavelength-conversion material within the through-hole; distributing the wavelength-conversion material predominantly on a side of the first opening of the through-hole within the light-transmissive resin; and after the step of distributing the wavelength-conversion material, removing a portion of the light-transmissive resin from a side of the second opening of the through-hole.

Abstract: A light emitting device including a first light emitting element that includes a first electrode having a first polarity and a second electrode having a second polarity that is different from the first polarity. The device has a circuit element that includes a main body, and first and second terminals electrically connected with one another via the main body. The device includes a first wiring having the first polarity connecting the first electrode of the first light emitting element and the first terminal, and a second wiring having the second polarity located in a layer common with a layer of the first wiring and including a portion elongated between the first terminal and the second terminal in a bottom view. An upper surface of the main body is positioned at a distance below an interface between a lower surface of the first wiring and the first electrode.

Abstract: A light emitting diode (LED) package structure include an electrically-insulated frame, a trough, a LED chip, a fluorescent colloid and at least two spacing members. The electrically-insulated frame has a surface with four corners. The trough is recessed in the surface. The LED chip is located in the trough. The fluorescent colloid is filled within the trough to cover the LED chip. The spacing members protrude from two of the four corners on the surface, wherein a glue escape gap is defined between each spacing member and a boundary of the trough.

Abstract: A first LED with a first LED sidewall is disclosed. A second LED with a second LED sidewall facing the first LED sidewall is also disclosed. A first dynamic optical isolation material between the first LED sidewall and the second LED sidewall and configured to change an optical state based on a state trigger such that a light behavior at the first LED sidewall for a light emitted by one of the first LED and the second LED is determined by the optical state, is also disclosed.

Abstract: The present invention relates to a process for manufacturing an optoelectronic device, wherein a layer of a formulation containing a silazane polymer and a wavelength converting material is applied to an optoelectronic device precursor, precured by exposure to radiation and then cured. There is further provided an optoelectronic device, preferably a light emitting device (LED) or a micro-light emitting device (micro-LED), which is prepared by said manufacturing process.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: A wavelength-converting member includes a wavelength-converting layer, a heat-dissipating component, and a securing member. The wavelength-converting layer has an upper surface, a lower surface, and one or more lateral surfaces with each of the one or more lateral surfaces of the wavelength-converting layer defining an inclined surface inclined at an acute angle with respect to the lower surface of the wavelength-converting layer. The wavelength-converting layer includes a thermally conductive part, and a fluorescent material containing part in contact with the thermally conductive part. The wavelength-converting layer is mounted on the heat-dissipating component. The securing member is secured to the heat-dissipating component. The securing member presses the inclined surface of each of the one or more lateral surfaces such that the wavelength-converting layer is secured to the heat-dissipating component.

Abstract: Provided is a light-emitting element which includes a first electrode, a second electrode over the first electrode, and first and second light-emitting layers therebetween. The first light-emitting layer contains a first host material and a first light-emitting material, and the second light-emitting layer contains a second host material and a second light-emitting material. The first light-emitting material is a fluorescent material, and the second light-emitting material is a phosphorescent material. The level of the lowest triplet excited state (T1 level) of the first light-emitting material is higher than the T1 level of the first host material. A light-emitting device, an electronic device, and a lighting device including the light-emitting element are further provided.

Abstract: A display apparatus includes a support substrate, a plurality of light emitting structures regularly arranged on the support substrate, and a wavelength conversion part disposed on the plurality of light emitting structures. The wavelength conversion part includes light transmitting portions and blocking portions, the light transmitting portions being disposed on the light emitting structures, respectively, and each of the light transmitting portions including a phosphor for converting a wavelength of light emitted from the corresponding light emitting structure. The support substrate includes a plurality of conductive patterns electrically connected to the light emitting structures, and the light emitting structures are coupled to the plurality of conductive patterns.

Abstract: A lighting system is for providing photosynthetically stimulating artificial light to a specified target area where such artificial light is needed. The lighting system has at least one luminaire with a light source. The luminaire emits photosynthetically stimulating light at a narrow beam angle of less than and including 20° (FWHM). The lighting system has means for positioning the at least one luminaire at a distance of minimum 20 m from the specified target area measured in a light beam direction, and the luminaire is adapted to illuminate the specified target area with a minimum photosynthetic photon flux density of 140 ?mol/s/m2. A method is for improving the growth conditions for plants in need of light at a specified target area by exposing the plants to a photosynthetically artificial light from a light source.

Abstract: The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

Abstract: Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package, in other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.

Abstract: A light emitting diode having an improved heat dissipation effect includes a light source unit emitting a light to a front surface and including a light emitting part, a first electrode pad, and a second electrode pad. The light emitting diode further includes a lead frame unit disposed on a rear surface of the light source unit and including first and second lead terminals respectively connected to the first and second electrode pads. The light emitting diode also includes at least one of the first and second lead terminals includes an upper conductive layer, an intermediate conductive layer, and a lower conductive layer which are disposed on different layers and electrically connected to one another.

Abstract: Described are light generating devices employing ultraviolet (UV) light emitting diodes and one or more UV active materials, such as UV reflective materials, UV scattering materials, and UV transparent materials. A UV light generation system, may include a plurality of UV light emitting diodes arranged across a surface having a diffuse UV reflective layer. The UV light generation system may be arranged to enclose a fluid pathway or may be arranged as a liner of a container or vessel for use in disinfecting, purifying, or sterilizing fluid, particles or objects in the fluid pathway, container, or vessel by exposure of the fluid, particles or objects to UV light generated by the UV light emitting diodes.

Abstract: A light emitting device comprises a light emitting element having a light emission peak wavelength in a range of 400 nm or more and 490 nm or less and a first fluorescent material having a light emission peak wavelength in a range of 570 nm or more and 680 nm or less, and emits light having a correlated color temperature being 1,950 K or less, an average color rendering index Ra being 51 or more, a full width at half maximum of a light emission peak having a maximum light emission intensity in a light emission spectrum of the light emitting device being 110 nm or less, and a first glare index Ls1/L that is a ratio of a first effective radiance Ls1 to a luminance L being 0.493 or less, wherein Ls1 and L are as defined in the disclosure.

Abstract: A lamp includes an extended planar light source, and an optical element arranged with the light source, wherein the optical element comprises an outer surface having an indented cusp substantially over the light source. A lamp includes an extended planar light source, and an optical element arranged with the light source, wherein the optical element comprises an outer surface having a portion at a peripheral edge comprising a curvature configured to redirect light emitted from the light source by total internal reflection.

Abstract: Provided are a light guide film, a backlight unit, and a display device. Light guide portions are disposed in holes of a reflection plate on which light sources are disposed, and a light guide film is directly disposed on the reflection plate and the light guide portions to provide a light guiding function and a light shielding function. Therefore, a method of facilitating implementation of a backlight unit with a small thickness, which satisfies image quality is provided. Further, each of the light shielding patterns has different reflectances in different areas, thereby increasing the amount of light supplied to an area between light sources. Therefore, a backlight unit with a reduced number of light sources and improved image quality may be provided.

Abstract: A method of manufacturing a light emitting device that comprises a first cover member and a second cover member, includes: providing a package that comprises a substrate, a plurality of resin walls, and a recessed part defined by an upper surface of the substrate and lateral surfaces of the plurality of resin walls, wherein the substrate includes a grooved part surrounding a first region; mounting a light emitting element in the first region; forming the second cover member in a region between the lateral surfaces defining the recessed part to an upper edge of an outer perimeter of the grooved part; forming the first cover member, which comprises depositing an uncured resin on the second cover member, and allowing the uncured resin to flow into a groove of the grooved part; and forming a light transmitting member on the first cover member and the light emitting element.

Abstract: The present invention relates to the technical field of plant cultivation through artificial light, and particularly provides a light environment method for plant cultivation through full-artificial light to provide a full-artificial light source for plant growth. The light source includes a light wave with a waveband of 620 nm to 760 nm, and the number of photons of the light wave of 620 nm to 760 nm accounts for 64% to 76% of the total number of photons of the light source. Compared with traditional light sources, such as existing fluorescent lamps and high-pressure sodium lamps, the present invention adopting a mode of light source proportion and light source combination can greatly improve the yield of the plant.

Abstract: In an embodiment a measuring unit includes a light emitting LED component including a housing occupying a housing surface G and an LED chip located within the housing, the LED chip including a light emitting light surface L and being configured to emit light; a photodetector configured to detect reflected light reflected from a measured object originating from the LED component and output a measurement signal dependent on a detection of the reflected light; and an integrated circuit configured to evaluate the measurement signal, wherein the LED component, the photodetector, and the integrated circuit are combined into an integrated unit; and a conversion layer disposed in the housing and located above the LED chip, the conversion layer configured to convert the light into multiband light, wherein a ratio L/G of is greater than or equal to 0.8, and wherein the measuring unit is configured to optically measure at least one property of the measured object.

Abstract: A method includes mounting a ceramic phosphor on an acrylic-free and metal-containing catalyst-free tacky layer of a dicing tape, dicing the ceramic phosphor from the dicing tape into ceramic phosphor plates, removing the ceramic phosphor plates from the dicing tape, and attaching the ceramic phosphor plates on light-emitting device (LED) dies.

Abstract: A surface mount electronic device providing an electrical connection between an integrated circuit (IC) and a printed circuit board (PCB) is provided and includes a die and a dielectric material formed to cover portions of the die. Pillar contacts are electrically coupled to electronic components in the die and the pillar contacts extend from the die beyond an outer surface of the die. A conductive ink is printed on portions of a contact surface of the electronic device package and forms electrical terminations on portions of the dielectric material and electrical connector elements that connect an exposed end surface of the pillar contacts to the electrical terminations.

Abstract: An optoelectronic device and a method for producing an optoelectronic device are disclosed. In an embodiment a method includes arranging an optoelectronic semiconductor chip with its top side towards a surface of a carrier, forming a recess at the surface of the carrier such that the recess surrounds the optoelectronic semiconductor chip, arranging a mold compound in the recess and above the surface of the carrier such that the optoelectronic semiconductor chip is embedded into the mold compound, wherein a bottom side of the optoelectronic semiconductor chip remains at least partially not covered by the mold compound, removing the carrier and arranging a wavelength-converting material above the surface of the carrier before arranging the optoelectronic semiconductor chip, wherein the wavelength-converting material is perforated while forming the recess.

Abstract: Solid-state lighting devices and more particularly light-emitting devices for horticulture applications are disclosed. Light-emitting devices are disclosed with aggregate emissions that target chlorophyll absorption peaks while also providing certain broader spectrum emissions between the chlorophyll absorption peaks. The aggregate emissions may be provided by light-emitting diodes (LEDs) that emit wavelengths that correspond with certain chlorophyll absorption peaks and lumiphoric materials that provide broader spectrum emissions. The aggregate emissions are configured to have reduced emissions from lumiphoric materials in ranges close to certain chlorophyll absorption peaks, such as above 600 nanometers (nm). In this regard, light-emitting devices according to the present disclosure provide the ability to efficiently target specific chlorophyll absorption peaks for plant growth while also providing suitable lighting for occupants in a horticulture environment.

Abstract: A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

Abstract: A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity.

Abstract: A display substrate and a manufacturing method thereof are provided. The display substrate includes a base substrate, as well as a first conductive layer, an organic functional layer and a second conductive layer which are on the base substrate sequentially, and the organic functional layer includes a carrier injection layer including a first carrier injection layer portion and a second carrier injection layer portion which are in a first sub-pixel area and a second sub-pixel area respectively; the display substrate further includes a spacer which separates the first carrier injection layer portion and the second carrier injection layer portion, and the carrier injection layer further includes a third carrier injection layer portion which is separated from the first carrier injection layer portion and the second carrier injection layer portion respectively.

Abstract: A method for manufacturing a light emitting device comprising an optical member provided on a light extracting surface side of a semiconductor light emitting element via a first light transmissive layer, the method comprising the steps of: (i) roughening said extracting surface of said semiconductor light emitting element, (ii) forming said first light transmissive layer on an entirety of said roughened light extracting surface, (iii) flattening an upper surface of said first light transmissive layer, and (iv) directly bonding said flattened upper surface of said first light transmissive layer and a surface of said optical member by performing surface-activated bonding, atomic diffusion bonding, or hydroxyl bonding.

Abstract: A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing an optoelectronic semiconductor chip with a radiation passage surface on a connection carrier, applying a deformable spacer to the radiation passage surface of the semiconductor chip, inserting the connection carrier with the semiconductor chip into a cavity of a tool, deforming, by the tool, the deformable spacer and encapsulating the semiconductor chip with a casting compound.

Abstract: Provided are a light source circuit unit that improves light extraction efficiency, as well as an illuminator and a display that include such a light source circuit unit. The light source circuit unit includes: a circuit substrate having a wiring pattern on a surface thereof, the wiring pattern having light reflectivity, a circular pedestal provided on the circuit substrate, a water-repelling region provided at least from a peripheral edge portion of the pedestal to a part of a side face of the pedestal, and one or two or more light-emitting device chips mounted on the pedestal, and driven by a current that flows through the wiring pattern.

Abstract: A wavelength conversion device includes a rotating device, a substrate rotated by the rotating device, a wavelength conversion element, and a first cooling device including, on an inside, a space in which working fluid is encapsulated, the first cooling device cooling the wavelength conversion element. The first cooling device is disposed in a position corresponding to the wavelength conversion element. The space extends from an outer edge side of the substrate to a rotation axis side. The first cooling device includes an evaporator and a condenser which are provided in the space. The evaporator includes a liquid retaining part configured to retain the working fluid in a liquid phase. The liquid retaining part is provided at the outer edge side in the space and disposed in the position corresponding to the wavelength conversion element.

Abstract: Lighting systems are described. A lighting system includes a first lead frame portion and a second lead frame portion. The first lead frame portion has at least a top surface, a bottom surface, and an opening. The second lead frame portion is within the opening of the first lead frame portion and has at least a top surface and a bottom surface. Light-emitting diode (LED) devices are each mechanically and electrically coupled to the top surface of the first lead frame portion and the top surface of the second lead frame portion. An electrically insulating and optically reflective material is disposed over exposed regions of the top surfaces of the first and second lead frame portions.

Abstract: A method of manufacturing a light emitting device including: forming grooves by removing a portion of a first resin of a first light emitting structure including a first light emitting element and the first resin, a portion of a second resin of a second light emitting structure including a second light emitting element and the second resin, and a portion of a third resin of a circuit element including a conducting part covered by the third resin, thereby forming a first groove straddling the first resin and the third resin, a second groove straddling the second resin and the third resin, and a third groove extending between the first groove and the second groove; supplying a first conducting material in the first grove and the second groove thereby forming first wiring; and supplying a second conducting material in the third groove thereby forming second wiring.

Abstract: A micro semiconductor device, including a semiconductor structure, a current confinement layer, a first type electrode, and a second type electrode, is provided. The current confinement layer is disposed in the semiconductor structure. The current confinement layer includes an oxidized area and a non-oxidized area. The first type electrode and the second type electrode are both disposed on the current confinement layer. An orthographic projection of a part of the oxidized area on a bottom surface of the semiconductor structure away from the first type electrode and the second type electrode is located between an orthographic projection of the first type electrode on the bottom surface and an orthographic projection of the second type electrode on the bottom surface.

Abstract: A light emitting device includes: a solid-state light emitting element that radiates blue-series laser light; and a wavelength converter 100 that absorbs the laser light and performs wavelength conversion of the absorbed laser light into light with a longer wavelength than a wavelength of the laser light. The wavelength converter includes: a silicate phosphor 1 containing Lu2CaMg2(SiO4)3:Ce3+ as a main component; and an aluminate phosphor 2 containing Lu3(Al1-xGax)2(AlO4)3:Ce3+ (where x is a numeric value that satisfies 0<x?1) as a main component.

Abstract: An electronic device including a first substrate, an isolating layer, a porous structure, and a light conversion unit is provided. The isolating layer is disposed on the first substrate and has an opening. The porous structure is disposed in the opening and has a plurality of pores arranged irregularly. The light conversion unit is disposed in the pores of the porous structure. The electronic device of the disclosure has ideal quality.

Abstract: A light source apparatus according to the present invention includes a phosphor wheel having a phosphor disposed in an annular shape on a disk-shaped base material, the phosphor serving to emit fluorescent light from excitation light, thereby forming an excitation light source having a predetermined color, and the phosphor having a discontinuous portion in a part of the annular shape, an excitation light source for emitting the excitation light with which a passage position of the circular phosphor is irradiated with respect to the phosphor wheel to be rotatively driven by the wheel motor, and a controller that controls light emission of the light source and the excitation light source synchronously with a position of the discontinuous portion with respect to an irradiation position of the excitation light.

Abstract: In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components.

Abstract: Light-emitting elements such as LEDs are associated with light-converting material such as phosphor and/or other material. A donor substrate comprising the light-converting and/or other material is suitably placed relative to a target substrate associated with the light-emitting elements. A laser or other energy source is then used to transfer the light-converting and/or other material in a pattern via writing or masking from the donor substrate to the target substrate in accordance with the pattern. Addressability and targetability of the transfer process facilitates precise patterning of the target substrate.

Abstract: A color light-emitting diode using a blue light component to produce red light and green light is disclosed. A blue-light emitting material is provided between a cathode layer and an anode layer for emitting the blue light component. A light re-emitting layer has a first material in a first diode section arranged to produce a red light component in response to the blue light component, and a second material in a second diode section arranged to produce a green light component in response to the blue light component. A transparent material in a third diode section allows part of the blue light component to transmit through. The anode layer is partitioned into three electrode portions separately located in the three diode sections, so that the red, green and blue light components in the diode sections can be separately controlled.

Abstract: The present invention relates to a light emitting diode (LED). The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: The present invention provides a light emitting diode which comprises a substrate, a light emitting layer including an N-type semiconductor layer and a P-type semiconductor layer formed on the substrate, and a wavelength conversion layer formed on the light emitting layer or on the back of the substrate. The wavelength conversion layer is formed of a Group III nitride semiconductor doped with rare earth elements. The rare earth elements include at least one of Tm, Er and Eu. According to a light emitting diode of the present invention, a desired color can be implemented in various ways by converting the wavelength of primary light emitted from a light emitting chip. Thus, the reliability and quality of products can be improved due to the uniform emission of light with a desired color. Further, since the existing semiconductor process can be utilized in the present invention, its fabrication process can be simplified, process cost and time can be reduced, and the compact products can be obtained.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: LED dies, emitting blue light, are provided on a first support substrate to form a light emitting layer. A mixture of a transparent binder, yellow phosphor powder, magenta-colored glass beads, and cyan-colored glass beads is printed over the light emitting surface. The mixture forms a wavelength conversion layer when cured. The beads are sized so that the tops of the beads protrude completely through the conversion layer. When the LED dies are on, the combination of the yellow phosphor light and the blue LED light creates white light. When the LEDs are off, white ambient light, such as sunlight, causes the conversion layer to appear to be a mixture of yellow light, magenta light, and cyan light. The percentage of the magenta and cyan beads in the mixture is selected to create a desired off-state color, such as a neutral color, of the conversion layer for aesthetic purposes.

Abstract: A white LED assembly includes a string of series-connected blue LED dice mounted on a substrate. The substrate has a plurality of substrate terminals. A first of the substrate terminals is coupled to be a part of first end node of the string. A second of the substrate terminals is coupled to be a part of an intermediate node of the string. A third of the substrate terminals is coupled to be a part of a second end node of the string. Other substrate terminals may be provided and coupled to be parts of corresponding other intermediate nodes of the string. A single contiguous amount of phosphor covers all the LED dice, but does not cover any of the substrate terminals. In one example, the amount of phosphor contacts the substrate and has a circular periphery. All the LEDs are mounted to the substrate within the circular periphery.

Abstract: Apparatuses and methods for producing light emitting devices maximizing luminous flux output are disclosed. In one possible embodiment, a light emitting device comprises a substrate and a reflective layer at least partially covering the substrate. The reflective layer is non-yellowing, and may be substantially light transparent. One or more light emitting diode (LED) chips are disposed on the substrate. The light emitting device may emit white light. The reflective layer may comprise a silicone carrier with light reflective particles dispersed in the silicone carrier. A light diffusion lens may also be disposed on the substrate and surrounding the LED chips. Furthermore, one or more microspheres, light scattering particles, and/or phosphor particles may be dispersed in the lens. In one possible method for producing a light emitting device, a substrate is provided.