Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract: The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.

Abstract: An LED die (3) is arranged with an adhesive (4) on an LED PCB (6). The LED PCB (6) has on the side opposite to the LED die (3) rear side contacts (7). Through this a self-contained LED lamp is formed, which e.g. can be applied by means of SMT to a board (9) or introduced into a lamp socket. In accordance with the invention, the rear side contacts (7) cover at least the half area, preferably the entire area apart from necessary exceptions, of the LED PCB (6). Through this, the heat can be discharged with slight thermal resistance. Preferably a cooling body (11) is arranged on the rear side of the board (9). In this case it is expedient if the board (9) has through-contacts for increasing the thermal conductivity.

Abstract: The present invention provide a surface light source, wherein, the surface light source comprises a LED light source, the diffusion plate and condenser plant. The diffusion plate has a phosphor, and the diffusion plate and the LED light source are disposed separately to form a heat dissipation space. The condenser device disposes between the LED light source and the diffuser plate for converging the light emitted from LED light source to the diffusion plate.

Abstract: A small-size LED packaging structure for enhancing a Sight emitting angle includes an opaque base and at least one light emitting chip. The light emitting chip is installed on the opaque base, and the opaque base includes a transparent sidewall disposed around the base and a concave-cup space, and the transparent sidewall is formed by a molding method, and the concave-cup space is filled with a packaging gel by a dispensing method, and the packaging gel is doped with at least one phosphor powder. Therefore, the transparent sidewall can increase the light emitting angle to 140°˜180° and reduce the amount of internal reflected light significantly to avoid the occurrence of a yellow ring phenomenon, and the phosphor powder can enhance the color manifestation and the color gamut.

Abstract: Disclosed is a package substrate for an optical element, which includes a base substrate, a first circuit layer formed on the base substrate and including a mounting portion, an optical element mounted on the mounting portion, one or more trenches formed into a predetermined pattern around the mounting portion by removing portions of the first circuit layer so that the first circuit layer and the optical element are electrically connected to each other, and a fluorescent resin material applied on an area defined by the trenches so as to cover the optical element, and in which such trenches are formed on the first circuit layer so that the optical element and the first circuit layer are electrically connected to each other, thus maintaining the shape of the fluorescent resin material and obviating the need to form a via under the optical element. A method of manufacturing the package substrate for an optical element is also provided.

Abstract: A photonic device generates light from a full spectrum of lights including white light. The device includes two or more LEDs grown on a substrate, each generating light of a different wavelength and separately controlled. A light-emitting structure is formed on the substrate and apportioned into the two or more LEDs by etching to separate the light-emitting structure into different portions. At least one of the LEDs is coated with a phosphor material so that different wavelengths of light are generated by the LEDs while the same wavelength of light is emitted from the light-emitting structure.

Abstract: A white light emitting device includes a blue light emitting diode chip that emits blue light in a specific wavelength band, a first resin layer that seals the blue light emitting diode chip and includes a cured product of silicone resin, and a second resin layer that covers the first resin layer and includes phosphor powder, which absorbs the blue light and emits light in a specific wavelength band, and a cured product of transparent resin. The phosphor powder has a composition represented by the following Formula (1): (Sr1-x-yBaxEuy)2SiO4??(1) (in Formula (1), x and y satisfy a condition that 0.05<x<0.5 and 0.05<y<0.3.) The first resin layer has thickness within a range of 200 ?m to 2000 ?m. The white light emitting device has high luminance for a long period.

Abstract: A light emitting device includes a light emitting element, a first phosphor which emits a light by being excited by a light emitted from the light emitting element and a second phosphor which emits a light by being excited by the light emitted from the light emitting element and/or the light emitted from the first phosphor. The light emitted from the light emitting element, the light emitted from the first phosphor and the light emitted from the second phosphor are mixed to make an inclination angle of a line, on a chromaticity diagram, connecting a chromaticity coordinate of the light emitted from the first phosphor and a chromaticity coordinate of the light emitted from the light emitting element equal to an inclination angle of an isotemperature line of light of a predetermined color temperature.

Abstract: A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes an insulating layer and a conductive layer on the insulating layer. The conductive layer is patterned to provide first and second conductive traces that connect to a semiconductor light emitting device. The second metal face may include heat sink fins therein. A flexible film including an optical element, such as a lens, also may be provided, overlying the semiconductor light emitting device.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.

Abstract: This invention discloses a lighting device for providing an illumination with enhanced color uniformity. The lighting device includes a light generating element adjacent a substrate and configured to produce light having wavelengths substantially within a first wavelength range; a transparent frame attached to the substrate, surrounding the transparent frame; a wavelength converting layer for converting a portion of the light produced by the light generating element into light having wavelengths within a second wavelength range, substantially covering the light emitting surface and at least part of the transparent frame; and a scattering frame configured to substantially scatter light that travels therein, covering a portion of the light emitting surface around periphery thereof to thereby receive a portion of the light leaving the wavelength converting layer around the periphery of the light emitting area. Light components in said portion of the light are substantially mixed in the scattering frame.

Abstract: According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

Abstract: A lighting apparatus and a display device including the same are disclosed. The present invention relates to a lighting apparatus, which can enhance resistance against gas or humidity and which can present a stable optical property and which can enhance light-emitting efficiency, and a display device including the lighting apparatus.

Abstract: An exemplary encapsulation structure for encapsulating an LED chip includes a first encapsulation, a second encapsulation and a transparent resin layer with phosphorous compounds doped therein. The first encapsulation defines a receiving room for receiving the LED chip therein. The second encapsulation defines a receiving space for receiving the first encapsulation therein. The second encapsulation is separated from the first encapsulation to define a clearance between the first encapsulation and the second encapsulation. The transparent resin layer is filled in the clearance. The transparent resin layer has a uniform thickness.

Abstract: The present invention provides a method for manufacturing a liquid crystal display device and a liquid crystal display device. The method includes (1) preparing a TFT substrate and a CF substrate; (2) applying sealant resin to the TFT substrate or CF substrate to form an enclosing resin frame body that forms an entry opening on the CF substrate or the TFT substrate; (3) applying sealant resin to the entry opening of the enclosing resin frame body to form a closing section; (4) filling liquid crystal inside the enclosing resin frame body; (5) bonding the TFT substrate and the CF substrate together; and (6) subjecting the bonded TFT substrate and the CF substrate to curing at high temperature in order to cure the enclosing resin frame body.

Abstract: Exemplary embodiments of the present invention relate to a light emitting device including a light emitting diode and a surface-modified luminophore. The surface-modified luminophore includes a silicate luminophore and a fluorinated coating arranged on the silicate luminophore.

Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

Abstract: Solid state transducer (“SST”) assemblies with remote converter material and improved light extraction efficiency and associated systems and methods are disclosed herein. In one embodiment, an SST assembly has a front side from which emissions exit the SST assembly and a back side opposite the front side. The SST assembly can include a support substrate having a forward-facing surface directed generally toward the front side of the SST assembly and an SST structure carried by the support substrate. The SST structure can be configured to generate SST emissions. The SST assembly can further include a converter material spaced apart from the SST structure. The forward-facing surface and the converter material can be configured such that at least a portion of the SST emissions that exit the SST assembly at the front side do not pass completely through the converter material.

Abstract: A light emitting device with a tunable light emission spectrum includes one or more blue LEDs in optical communication with n different red phosphor compositions. Each of the n different red phosphor compositions includes a different amount of strontium (Sr) and comprises light emission in a wavelength range from about 600 nm to about 675 nm. Each of the blue LEDs comprises light emission in a wavelength range from about 400 nm to about 475 nm. An mth different red phosphor composition has a formula Ca1-x-ySrxEuyAlSiN3, with 0<x<1 and 0<y<1, and x=xm and 1?m?n. A light emission spectrum of the light emitting device comprises a blue spectral component from the one or more blue LEDs and a red spectral component from the n different red phosphor compositions, where the red spectral component comprises n overlapping light emission profiles each having a different peak emission wavelength ?m.

Abstract: Aspects of the disclosure include electroluminescent devices and methods for making the same. The devices include a substrate, a hole-injection electrode layer, an electroluminescent layer, and an electron-injection electrode layer, such as a layer that includes an air-stable, low work function material, which layer is capable of achieving efficient electron injection with reduced current leakage. In certain embodiments, the devices may contain an efficient electron injection layer that includes a composition comprising a polymer, e.g., a polymer that contains polar components (such as a polar functional group), and a metal diketonate. In certain embodiments, the devices may contain an electron injection layer that includes polyethylene glycol dimethyl ether and barium or calcium acetylacetonate.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.

Abstract: According to an embodiment, a method for manufacturing a semiconductor light emitting device includes steps for forming a fluorescent substance layer on a first face of a semiconductor layer and forming a light shielding film on the side face of the fluorescent substance layer. The fluorescent substance layer includes a resin and fluorescent substances dispersed in the resin, and have a light emitting face on a side opposite to the first face of the semiconductor layer and a side face connecting to the light emitting face with an angle of 90 degree or more between the light emitting face and the side face. The light shielding film shields a light emitted from a light emitting layer included in the semiconductor layer and a light radiated from the fluorescent substances.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.

Abstract: According to an embodiment, a semiconductor light emitting device includes a semiconductor layer including a light emitting layer and a fluorescent substance excited by light emitted from the light emitting layer, a peak wavelength of a radiation spectrum of the light emitting layer at a room temperature being shorter than a peak wavelength of an excitation spectrum of the fluorescent substance.

Abstract: An exemplary light emitting diode (LED) package includes a substrate, an electrical member formed on the substrate, an LED chip mounted on the substrate and electrically connected to the electrical member, and a heat-dissipating member formed on the electrical member. The heat-dissipating member helps the LED chip to dissipate heat generated thereby when the LED chip is in operation.

Abstract: An LED package comprises a substrate, a reflector, a light-absorbing layer, an encapsulation layer and an LED chip. The light-absorbing layer is located around the reflector and is able to absorb any light which penetrates through the reflector. Therefore, any vignetting or halation of light from the LED package is prevented. Moreover, the LED package can be constructed on a very small scale with no reduction in its color rendering properties.

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract: A method of selectively applying a material to a surface of a substrate from a stamp with a raised surface using an energy activated release layer is provided. The release layer is applied to at least a first portion of a surface of the stamp. A layer of the material is applied to the raised surface of the stamp. The raised surface of the stamp is placed in contact with the surface of the substrate such that the material layer is situated therebetween. Thereafter, the release layer is activated with energy, causing the material layer to release from the raised surface of the stamp, and to adhere to the surface of the substrate. Alternatively, the entire stamp surface may be coated with the release layer and the release layer may be selectively activated in the areas in which the material on the stamp surface is in contact with the substrate.

Abstract: A first device that may include one or more organic light emitting devices. At least 65 percent of the photons emitted by the organic light emitting devices are emitted from an organic phosphorescent emitting material. An outcoupling enhancer is optically coupled to each organic light emitting device. In one embodiment, the light panel is not attached to a heat management structure. In one embodiment, the light panel is capable of exhibiting less than a 10 degree C. rise in junction temperature when operated at a luminous emittance of 9,000 lm/m2 without the use of heat management structures, regardless of whether the light panel is actually attached to a heat management structure or not. The light panel may be attached to a heat management structure. The light panel may be not attached to a heat management structure.

Abstract: A light-emitting device package including: a package main body including a cavity and a lead frame including a mounting portion disposed in the cavity and a plurality of terminal portions; a light-emitting device chip mounted on the mounting portion; a plurality of bonding wires for electrically connecting the plurality of terminal portions and the light-emitting device chip; a light-transmitting encapsulation layer filled in the cavity; and a light-transmitting cap member disposed in the cavity and blocking the encapsulation layer to contact the plurality of bonding wires.

Abstract: A semiconductor light source apparatus can emit various color lights having high brightness. The semiconductor light source apparatus can include a radiating substrate, at least one phosphor layer disposed on the radiating substrate and a semiconductor light source. The at least one phosphor layer can be composed of at least one of a glass phosphor and a phosphor ceramic and can include at least one of a red phosphor, a green phosphor and a blue phosphor. The light source can be located adjacent the phosphor layer so that light having high brightness emitted from the light source can be efficiently reflected on the radiating substrate via the at least one phosphor layer. Thus, the disclosed subject matter can provide a semiconductor light source apparatus that can emit various color lights having high brightness and a lighting unit using the light source apparatus, which can be used for general lighting, etc.

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract: A light-emitting diode (LED) packaging structure having low angular correlated color temperature deviation includes: a substrate, a LED chip, a phosphor body, and a transparent lens. The LED chip is disposed on the substrate, and the phosphor body includes a hemisphere body and an extension part extended from the bottom of the hemisphere body. The phosphor body is disposed on the substrate and covers the LED chip. Besides, the transparent lens is disposed outside the phosphor body to cover the phosphor body to increase light extraction efficiency. With the implementation of the present invention, the setup of the extension part makes a longer vertical distance between the LED chip and the top of the phosphor body, so that the light in the normal direction of the LED chip can have a longer optical length, thereby to reduce the angular correlated color temperature deviation.

Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer.

Abstract: The embodiment provides a process for production of an oxynitride fluorescent substance. An compound containing In or Ga is adopted in the process as a material thereof. The red fluorescent substance produced by the process can be combined with a semiconductor light-emitting element, so as to be used in a light-emitting device or a light-emitting module.

Abstract: A light emitting device, which has: a light emitting element; a package that comprises a concavity for holding the light emitting element, and that has on its side wall where the concavity is integrally formed a light reflector for reflecting light from the light emitting element and a light transmitter for transmitting light from the light emitting element to the outside.

Abstract: Many thousands of micro-LEDs (e.g., 25 microns per side) are deposited on a substrate. Some of the LEDs are formed to emit a peak wavelength of 450 nm (blue), and some are formed to emit a peak wavelength of 490 nm (cyan). A YAG (yellow) phosphor is then deposited on the LEDs, or a remote YAG layer is used. YAG phosphor is most efficiently excited at 450 nm and has a very weak emission at 490 nm. The two types of LEDs are GaN based and can be driven at the same current. The ratio of the two types of LEDs is controlled to achieve the desired overall color emission of the LED lamp. The blue LEDs optimally excite the YAG phosphor to produce white light having blue and yellow components, and the cyan LEDs broaden the emission spectrum to increase the CRI of the lamp while improving luminous efficiency. Other embodiments are described.

Abstract: A method of coating a light emitting diode (LED) is provided. The method includes preparing a substrate in which a plurality of LEDs are arranged, applying a curable liquid containing a fluorescent material to the substrate and the plurality of LEDs, and selectively applying energy to the substrate to which the curable liquid is applied, to thereby pattern the curable liquid, wherein the application of the energy includes applying the energy to both surfaces of the substrate.

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0<x?1), wherein the step of growing A3N structures using (a)-langasite (La3Ga5SiO14) substrates is applied for the purposes of reducing the density of defects and mechanical stresses in heterostructures.

Abstract: The invention relates to a light-emitting component, in particular an organic luminescent diode, having an electrode and a counter electrode and an organic region arranged between the electrode and the counter electrode and having an organic light-emitting region. Furthermore, the invention relates to methods for the production of such a component.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first face, a second face, a side face, and a light emitting layer; a p-side electrode provided on the second face; an n-side electrode provided on the side face; a first p-side metal layer provided on the p-side electrode; a first n-side metal layer provided on the periphery of the n-side electrode; a first insulating layer provided on a face on the second face side in the first n-side metal layer; a second p-side metal layer connected with the first p-side metal layer on the first p-side metal layer, and provided, extending from on the first p-side metal layer to on the first insulating layer; and a second n-side metal layer provided on a face on the second face side in the first n-side metal layer in a peripheral region of the semiconductor layer.

Abstract: The invention provides a light emitting diode package structure and a method for fabricating the same. The package structure includes: a light emitting diode chip formed on a substrate; a first hydrophobic rib layer formed on the substrate and surrounding the light emitting diode; and a first cover layer formed on the substrate and covering the light emitting diode, wherein the first hydrophobic rib layer is used as a border of the first cover layer and an angle between the facet of the first cover layer and the substrate is about 60-90 degrees.

Abstract: A light-emitting diode (LED) package and related method of manufacturing are provided. The LED package includes a resin blocking portion to prevent a transparent resin from reaching a contact terminal of the LED package during the formation of the lens for the LED package.

Abstract: A light emitting diode device includes: at least one light emitting diode chip, which includes a semiconductor unit, two electrodes that are disposed on an electrode-mounting surface of the semiconductor unit, a light-transmissive insulating layer that is disposed on the electrode-mounting surface and that has two via holes, a reflective metal layer disposed on a portion of the light-transmissive insulating layer, a protective insulating layer that is disposed on the reflective metal layer, a conductor-receiving insulating layer that has two conductor-receiving holes respectively in communication with the via holes, and two conductor units that are formed respectively in the conductor-receiving holes; and a light-transmissive envelope layer that covers a surface of the light emitting diode chip opposite to the electrode-mounting surface, that extends to cover outer lateral surfaces of the light emitting diode chip, and that is doped with a fluorescence powder.

Abstract: A light-emitting diode (LED) packaging structure having low angular correlated color temperature deviation includes: a substrate, a LED chip, a phosphor body, and a transparent lens. The LED chip is disposed on the substrate, and the phosphor body includes a hemisphere body and an extension part extended from the bottom of the hemisphere body. The phosphor body is disposed on the substrate and covers the LED chip. Besides, the transparent lens is disposed outside the phosphor body to cover the phosphor body to increase light extraction efficiency. With the implementation of the present invention, the setup of the extension part makes a longer vertical distance between the LED chip and the top of the phosphor body, so that the light in the normal direction of the LED chip can have a longer optical length, thereby to reduce the angular correlated color temperature deviation.

Abstract: According to one embodiment, a luminaire includes a light-emitting part to emit a blue light with a peak wavelength of 430 nanometers or more and less than 460 nanometers, and a phosphor that is excited by the emitted light of the light-emitting part and emits a light having a color different from blue. In an emission spectrum including the emitted light of the light-emitting part and the light emitted from the phosphor, an intensity peak in a range of a light wavelength of 430 nanometers to 490 nanometers is in a range of a wavelength of 470 nanometers to 490 nanometers.

Abstract: An LED package includes a base, an LED chip disposed on the base, a liquid heat conducting layer and a sealing member. The LED chip is sealed from liquid. The liquid heat conducting layer surrounds and covers the sealed LED chip. The sealing member is arranged on the substrate and encloses and seals the liquid heat conducting layer therein. The LED chip is sealed by a phosphor layer on a top surface thereof and a heat conductive layer on a side surface thereof.

Abstract: A light source module includes a substrate, a first LED package and a second LED package. The first and second LED packages are disposed on the substrate. The first LED package includes a first blue LED chip and a first phosphor. The first blue LED chip emits light in the range of the wavelength for blue light. The first phosphor is used to convert the wavelength of a portion of the light emitted from the first blue LED chip. The second LED package includes a second blue LED chip and a second phosphor. The second blue LED chip emits light in the range of the wavelength for blue light. The second phosphor is used to convert the wavelength of a portion of the light emitted from the second blue LED chip. The wavelength associated with the second phosphor is greater than that associated with the first phosphor.

Abstract: A semiconductor light-emitting device includes first and second lead frames that are arranged with a separation on a common plane, a semiconductor light-emitting element that is electrically connected to the first and second lead frames, and a resin body that covers the first and second lead frames and the semiconductor light-emitting element, and includes fluorescent materials that absorb light emitted from the semiconductor light-emitting element and emit light with a wavelength longer than the wavelength of the light absorbed. The resin body has a shape that becomes smaller in cross-section with increasing distance from the common plane.