Comprising Transparent Conductive Layers (e.g., Transparent Conductive Oxides (tco), Indium Tin Oxide (ito)) (epo) Patents (Class 257/E33.064)
  • Patent number: 9041034
    Abstract: In one embodiment, a semiconductor component, such as a wavelength converter wafer, is described wherein the wavelength converter is bonded to an adjacent inorganic component with a cured bonding layer comprising polysilazane polymer. The wavelength converter may be a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles. In another embodiment, the semiconductor component is a pump LED component bonded to an adjacent component with a cured bonding layer comprising polysilazane polymer. The adjacent component may the described wavelength converter(s) or another component comprised of inorganic material(s) such as a lens or a prism. Also described are methods of making semiconductor components such as wavelength converters and LED's.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: May 26, 2015
    Assignee: 3M Innovative Properties Company
    Inventors: Guoping Mao, Stephen J. Znameroski, Yu Yang, Terry L. Smith
  • Patent number: 9035545
    Abstract: Provided is an organic light emitting diode including an organic light-emitting part including a first electrode, an organic material layer having a light-emitting layer, and a second electrode, and an encapsulating layer included on an entire top surface of the organic light-emitting part. Here, the encapsulating layer has a structure in which at least two of a water barrier film, a glass cap, a metal foil and a conductive film are stacked. Accordingly, the diode may have excellent water and oxygen barrier effects, and deterioration of the diode or running failure may be prevented.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: May 19, 2015
    Assignee: LG CHEM, LTD.
    Inventors: Kwang Jin Jeong, Min Soo Kang, Jong Seok Kim, Hyun Jee Yoo, Yoon Gyung Cho
  • Patent number: 9035420
    Abstract: The present invention relates to an organic light emitting device and a method for preparing the same. An organic light emitting device according to the present invention comprises an organic light emitting unit having a structure in which a substrate, a first electrode, an organic material layer, and a second electrode are sequentially laminated, wherein the organic light emitting device comprises an auxiliary electrode and a fuse pattern; and the first electrode and the auxiliary electrode are electrically connected to each other through the fuse pattern.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: May 19, 2015
    Assignee: LG CHEM, LTD.
    Inventors: Jung Hyoung Lee, Minsoo Kang, Ducksu Oh
  • Patent number: 9024342
    Abstract: A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.
    Type: Grant
    Filed: October 5, 2011
    Date of Patent: May 5, 2015
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Masao Kamiya, Masashi Deguchi
  • Patent number: 9006733
    Abstract: In a semiconductor device including a transistor using an oxide semiconductor film, stable electric characteristics can be provided and high reliability can be achieved. A structure of the semiconductor device, which achieves high-speed response and high-speed operation, is provided. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in order and a sidewall insulating layer is provided on the side surface of the gate electrode layer, the sidewall insulating layer has an oxygen-excess regions, which is formed in such a manner that a first insulating film is formed and then is subjected to oxygen doping treatment, a second insulating is formed over the first insulating film, and a stacked layer of the first insulating film and the second insulating film are etched.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: April 14, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 9000444
    Abstract: A thin film transistor (TFT) array substrate is provided that includes a TFT on a substrate. The TFT can include an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes. A pixel electrode is disposed on the first and second insulating layers. A capacitor including a lower electrode is disposed on a same layer as the gate electrode and an upper electrode. A third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode. A fourth insulating layer covers the source electrode, the drain electrode, and the upper electrode, and exposes the pixel electrode and can further expose a pad electrode.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: April 7, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: June-Woo Lee, Jae-Beom Choi, Kwan-Wook Jung, Jae-Hwan Oh, Seong-Hyun Jin, Kwang-Hae Kim, Jong-Hyun Choi
  • Patent number: 8987772
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: March 24, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang-Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 8981416
    Abstract: An organic light-emitting diode has a carrier substrate. The light-emitting diode also contains an active layer that generates and emits electromagnetic radiation at a carrier front face. The active layer is mounted on the carrier substrate. At least one contacting device is located on a carrier rear face and is arranged simultaneously for electrical contacting and for mechanical attachment of the light-emitting diode. The contacting device includes a contact region. The contact region and/or the contacting device, seen in a side view parallel to the carrier rear face, are elevated in a U-shape or L-shape above the carrier rear face and/or extend in a lateral direction away from the active layer.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: March 17, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Simon Schicktanz
  • Patent number: 8969897
    Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, a first electrode layer, a second electrode layer disposed between the light emitting structure and the first electrode layer, and an insulating layer surrounding the edge of the second electrode layer under the second conductive type semiconductor layer, the insulating layer being disposed between the second electrode layer and the first electrode layer, wherein the first electrode layer passes through the second electrode layer, the second conductive type semiconductor layer and the active layer, and contacts the first conductive type semiconductor layer, and the second electrode layer comprises a plurality of first reflective layers that contact the second conductive type semiconductor layer and are spaced from one another by a predetermined distance.
    Type: Grant
    Filed: November 7, 2012
    Date of Patent: March 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Woon Kyung Choi
  • Patent number: 8969895
    Abstract: A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
    Type: Grant
    Filed: September 6, 2011
    Date of Patent: March 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae Yoon Kim, Jin Bock Lee, Seok Min Hwang, Su Yeol Lee
  • Patent number: 8941201
    Abstract: In a transparent substrate (10), there are formed a semiconductor layer (14) formed of an oxide semiconductor, the semiconductor layer (14) functioning as a channel portion of a TFT (2); an electrode (16) formed of a transparent conductive material and located over the semiconductor layer (14), and a light-shielding conductor (17) formed on the electrode (16), the light-shielding conductor being formed of a material which has a conductivity higher than that of the transparent conductive material and which has light-shielding property, the light-shielding conductor covering the semiconductor layer (14). This structure can inhibit exposure of the oxide semiconductor which forms the channel portion toward a light, and can lower the resistance of the electrode formed of the transparent conductive material.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: January 27, 2015
    Assignee: Panasonic Liquid Crystal Display Co., Ltd.
    Inventor: Kazuo Kita
  • Patent number: 8941117
    Abstract: An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: January 27, 2015
    Assignee: Avogy, Inc.
    Inventors: Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Linda Romano, David P. Bour, Richard J. Brown, Thomas R. Prunty
  • Patent number: 8936950
    Abstract: To improve light emission efficiency and reliability. A transparent conductive film 10 is formed on an entire top surface of a second semiconductor layer 108, and a photo-resist is applied thereon. When removing the photo-resist on the upper surface corresponding to an electrode forming part 16 of a first semiconductor layer 104, the photo-resist is removed to be gradually thinned at a boundary of a portion to be removed. The transparent conductive film is wet etched using the remaining photo-resist as a mask to expose a part of the second semiconductor layer. Dry etching is performed using the remaining photo-resist and the transparent conductive film as a mask to expose the electrode forming part of the first semiconductor layer. A portion of the transparent conductive film exposed in the dry etching using the remaining photo-resist as a mask is wet etched. The remaining photo-resist is eliminated.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: January 20, 2015
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Naoki Nakajo, Masao Kamiya, Akihiro Honma
  • Patent number: 8933459
    Abstract: Embodiments are directed to an organic light emitting display device, including a substrate, and a plurality of pixels, each pixel including a protrusion pattern and a trench area formed in the substrate, an organic light emitting device disposed on the substrate, a capacitor, the capacitor including a first capacitor electrode and a second capacitor electrode, a first transistor, the first transistor being coupled to a gate line extended in a row direction, a data line extended in a column direction crossing the row direction, and the first capacitor electrode, and a second transistor, the second transistor being coupled to the first capacitor electrode, a voltage line extended in the column direction, and the organic light emitting device, wherein the second capacitor electrode is branched from the voltage line, and the gate line and the first capacitor electrode are formed on and overlap the protrusion pattern.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: January 13, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventor: Joo Sun Yoon
  • Patent number: 8916862
    Abstract: To increase light-extraction efficiency and simplify manufacturing process. An organic EL panel includes: first electrode reflecting incident light; second electrode transmitting incident light therethrough; organic light-emitting layer emitting light of corresponding color among RGB colors; first functional layer including charge injection/transport layer and at least one other layer, and disposed between the first electrode and the light-emitting layer; and second functional layer disposed between the second electrode and the light-emitting layer. The first functional layers of the RGB colors are equal in film thickness, the organic light-emitting layers of the RGB colors are equal in optical distance from the first electrode, the second functional layers of the RGB colors are equal in film thickness, the organic light-emitting layers of the RGB colors are equal in optical distance from the second electrode, and the organic light-emitting layers of the RGB colors differ in film thickness.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: December 23, 2014
    Assignee: Panasonic Corporation
    Inventors: Keiko Kurata, Noriyuki Matsusue, Kazuhiro Yoneda
  • Patent number: 8912033
    Abstract: Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components.
    Type: Grant
    Filed: October 8, 2010
    Date of Patent: December 16, 2014
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Hsing-Kuo Hsia, Chih-Kuang Yu, Gordon Kuo
  • Patent number: 8912028
    Abstract: A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode layer, comprises a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; a light transmissive electrode layer formed on the second semiconductor layer, the light transmissive electrode layer having a structure in which at least one conductive thin film and at least one insulating thin film are deposited; and a first electrode formed on the light transmissive electrode layer, wherein the light transmissve electrode layer includes at least one contact portion for contacting the at least one conductive thin film with the first electrode.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: December 16, 2014
    Assignee: LG Display Co., Ltd.
    Inventors: Taeil Jung, YoungChae Kim, SunMan Kim, Yeji Han, Chunghoon Park, Byeong-Kyun Choi, Se-Eun Kang
  • Patent number: 8906716
    Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.
    Type: Grant
    Filed: September 11, 2013
    Date of Patent: December 9, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuo Shimokawa, Takashi Koyanagawa, Takeshi Miyagi, Akihiko Happoya, Kazuhito Higuchi, Tomoyuki Kitani
  • Patent number: 8907352
    Abstract: A photoelectric conversion element in accordance with an embodiment includes a photoelectric conversion layer, a cathode electrode, and an anode electrode. The cathode electrode is arranged on one surface of the photoelectric conversion layer and includes monolayer graphene and/or multilayer graphene in which a portion of carbon atoms is substituted with at least nitrogen atoms. The anode electrode is arranged on the other surface of the photoelectric conversion layer.
    Type: Grant
    Filed: September 18, 2011
    Date of Patent: December 9, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Katsuyuki Naito
  • Patent number: 8907336
    Abstract: A thin film semiconductor device has a semiconductor layer including a mixture of an amorphous semiconductor ionic metal oxide and an amorphous insulating covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a conductive channel, and a gate terminal is positioned in communication with the conductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: December 9, 2014
    Assignee: CBrite Inc.
    Inventors: Chan-Long Shieh, Gang Yu
  • Patent number: 8896012
    Abstract: A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer a first electrode disposed at a bottom of the trench, wherein the first electrode includes at least one first finger, an insulating layer covering the first electrode, and a second electrode including at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: November 25, 2014
    Assignee: Huga Optotech, Inc.
    Inventor: Chih-Ching Cheng
  • Patent number: 8895991
    Abstract: An organic electroluminescent display and method of manufacturing the same are disclosed. In one aspect, the organic electroluminescent display includes a substrate and a first electrode disposed on the substrate. It also includes a pixel definition layer disposed on the first electrode, wherein the pixel definition layer has an opening portion formed in an area overlapped with the first electrode. It further includes a lyophilic layer disposed on the first electrode and the pixel definition layer, an organic light emitting layer disposed on the lyophilic layer, and a second electrode disposed on the organic light emitting layer. The lyophilic layer includes a center portion and an edge portion. The center portion is disposed on the first electrode through the opening portion and includes at least one recess portion formed therein. The edge portion is extended from the center portion and disposed on the pixel definition layer.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: November 25, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: A Rong Lee, Young-il Kim, Euigyu Kim
  • Patent number: 8895957
    Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: November 25, 2014
    Assignee: Seoul Viosys Co., Ltd
    Inventors: Jong Lam Lee, Jae Ho Lee, Yeo Jin Yoon, Eu Jin Hwang, Dae Won Kim
  • Patent number: 8889440
    Abstract: An optical emitter includes a Light-Emitting Diode (LED) on a package wafer, transparent insulators, and one or more transparent electrical connectors between the LED die and one or more contact pads on the packaging wafer. The transparent insulators are deposited on the package wafer with LED dies attached using a lithography or a screen printing method. The transparent electrical connectors are deposited using physical vapor deposition, chemical vapor deposition, spin coating, spray coating, or screen printing and may be patterned using a lithography process and etching.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: November 18, 2014
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Yung-Chang Chen, Hsin-Hsien Wu, Ming Shing Lee, Huai-En Lai, Fu-Wen Liu, Andy Wu
  • Patent number: 8884396
    Abstract: According to one embodiment, a first back surface of a first substrate and a second front surface of a second substrate are jointed together so as to connect a first conductor with a second conductor. The first conductor includes a portion having a diameter equal to that of a first gap formed above a first metal layer in a range between the first metal layer and a first front surface, and a portion having a diameter greater than that of the first gap and smaller than an outer diameter of the first metal layer in a range between the first metal layer and the first back surface. A first insulating layer has a gap formed above the first metal layer, the gap being greater than the first gap and smaller than the outer diameter of the first metal layer.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Mitsuyoshi Endo
  • Patent number: 8872206
    Abstract: An organic light emitting display device includes a thin film transistor (TFT), a first insulating layer covering the TFT, a first electrode formed on the first insulating layer and electrically connected to the TFT, a second insulating layer that is formed on the first insulating layer and covers the first electrode and has an opening to expose a portion of the first electrode, an organic layer formed on a portion of the second insulating layer and the first electrode, a second electrode formed on the second insulating layer and the organic layer and composed of a first region and a second region, a capping layer formed on a first region of the second electrode and having first edges, and a third electrode formed on a second region of the second electrode and having second edges whose side surfaces contact side surfaces of the first edges of the capping layer.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: October 28, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jin-Koo Chung, Jun-Ho Choi, Seong-Min Kim
  • Patent number: 8866165
    Abstract: A light emitting apparatus includes a plurality of single crystal semiconductor thin films that emit light. The single crystal semiconductor thin films are secured in intimate contact to the surface of a substrate or a bonding layer formed on the substrate. A first conductive electrode is formed on the single crystal semiconductor thin film and is connected to a first conductive side metal layer. The first conductive side metal layer is closer to the surface of the substrate than a top surface of the single crystal semiconductor thin film. A second conductive electrode is formed on the single crystal semiconductor thin film. A second conductive side metal layer is connected to the second conductive electrode. The second conductive side metal layer is closer to the surface of the substrate than the top surface of the single crystal semiconductor thin film.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: October 21, 2014
    Assignee: Oki Data Corporation
    Inventor: Mitsuhiko Ogihara
  • Patent number: 8853695
    Abstract: A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: October 7, 2014
    Assignee: Kobe Steel, Ltd.
    Inventors: Aya Hino, Hiroshi Gotou
  • Patent number: 8835206
    Abstract: The present invention provides a pixel structure including a substrate, a first metal pattern layer, an insulating layer, a second metal pattern layer, a passivation layer, and a conductive protection layer. The substrate has at least one pixel region. The first patterned metal layer is disposed on the substrate, and has a top surface. The insulating layer is disposed on the first patterned metal layer and the substrate, and is in contact with the top surface of the first patterned metal layer. The second patterned metal layer is disposed on the insulating layer in the pixel region, and includes a source and a drain. The passivation layer is disposed on the second patterned metal layer and the insulating layer. A top surface of the source is in contact with the passivation layer, and the conductive protection layer is disposed on the drain.
    Type: Grant
    Filed: June 28, 2012
    Date of Patent: September 16, 2014
    Assignee: Chunghwa Picture Tubes, Ltd.
    Inventors: Chin-Tzu Kao, Jin-Chuan Kuo, Ya-Ju Lu
  • Patent number: 8829527
    Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: September 9, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Murakami, Motomu Kurata, Hiroyuki Hata, Mitsuhiro Ichijo, Takashi Ohtsuki, Aya Anzai, Masayuki Sakakura
  • Patent number: 8829555
    Abstract: A semiconductor light emission element (1) includes: a substrate (110); multi-layered semiconductor layers (100) including a light emission layer (150) and layered on the substrate (110); a transparent electrode (170) including an indium oxide and layered on the multi-layered semiconductor layers (100); a first junction layer (190) including tantalum as a valve action metal and layered on the transparent electrode (170) in such a manner that a side of the first junction layer (190) being in contact with the transparent electrode (170) is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode (200) layered on the first junction layer (190) and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.
    Type: Grant
    Filed: December 14, 2009
    Date of Patent: September 9, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Koji Kamei, Remi Ohba, Takashi Hodota
  • Patent number: 8822243
    Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: September 2, 2014
    Assignee: Manutius IP Inc.
    Inventors: Li Yan, Chao-kun Lin, Chih-Wei Chuang
  • Patent number: 8822998
    Abstract: An organic light emitting display device includes a substrate, a plurality of sub-pixels on the substrate, each sub-pixel including a first region configured to emit light and a second region configured to transmit external light, a plurality of thin film transistors disposed in the first region of the each sub-pixel, a plurality of first electrodes disposed in the first region of each sub-pixel and electrically connected to the thin film transistors, a first insulating layer on at least a portion of the first region of each sub-pixel to cover a portion of the first electrode, an organic emission layer on the first electrode, a second insulating layer on at least a portion of the second region of each sub-pixel, the second insulating layer including a plurality of openings therein, and a second electrode covering the organic emission layer, the first insulating layer, and the second insulating layer.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: September 2, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Seong-Min Kim, Jun-Ho Choi, Jin-Koo Chung
  • Patent number: 8823009
    Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: September 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Murakami, Motomu Kurata, Hiroyuki Hata, Mitsuhiro Ichijo, Takashi Ohtsuki, Aya Anzai, Masayuki Sakakura
  • Patent number: 8822999
    Abstract: An organic light-emitting display device includes a capacitor lower electrode that includes a semiconductor material doped with ion impurities. A first insulating layer covers an active layer and the capacitor lower electrode. A gate electrode includes a gate lower electrode formed of a transparent conductive material and a gate upper electrode formed of metal. A pixel electrode is electrically connected to the thin film transistor. A capacitor upper electrode is at the same level as the pixel electrode. An etch block layer is formed between the first insulating layer and the capacitor upper electrode. Source and drain electrodes are electrically connected to the active layer. A second insulating layer has an opening completely exposing the capacitor upper electrode. A third insulating layer exposes the pixel electrode. An intermediate layer includes an emissive layer. An opposite electrode faces the pixel electrode.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: September 2, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Hyun Choi, Kwang-Hae Kim
  • Patent number: 8803179
    Abstract: A semiconductor light emitting device is provided that includes a support substrate, a first metal layer formed on the support substrate, a transparent conductive layer formed on the first metal layer, a second metal layer embedded in the transparent conductive layer, and a semiconductor light emitting layer formed on the transparent conductive layer. A reflectance of the second metal layer to light emitted by the semiconductor light emitting layer is higher than a reflectance of the first metal layer to light emitted by the semiconductor light emitting layer.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: August 12, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuhiko Akaike, Shinji Nunotani, Kazuyoshi Furukawa
  • Patent number: 8803152
    Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: August 12, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Mitsuhiro Ichijo, Taketomi Asami
  • Patent number: 8796703
    Abstract: A display device includes a transparent substrate, and a plurality of single-crystal thin-film semiconductor light-emitting elements disposed on one side of the transparent substrate. Each of the single-crystal thin-film semiconductor light-emitting elements is composed of single-crystal thin-film semiconductor layers separated from a base substrate, and includes a light-emitting layer and two non-light-emitting layers disposed on both sides of the light-emitting layer.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: August 5, 2014
    Assignee: Oki Data Corporation
    Inventors: Mitsuhiko Ogihara, Kazuo Tokura
  • Patent number: 8790937
    Abstract: A transparent conductive electrode stack containing a work function adjusted zinc oxide is provided. Specifically, the transparent conductive electrode stack includes a layer of zinc oxide and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of zinc oxide to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of zinc oxide and no work function modifying material.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: July 29, 2014
    Assignee: International Business Machines Corporation
    Inventors: Keith E. Fogel, Ning Li, Devendra K. Sadana
  • Patent number: 8791487
    Abstract: A transparent conductive electrode stack containing a work function adjusted zinc oxide is provided. Specifically, the transparent conductive electrode stack includes a layer of zinc oxide and a layer of a work function modifying material. The presence of the work function modifying material in the transparent conductive electrode stack shifts the work function of the layer of zinc oxide to a higher value for better hole injection into the OLED device as compared to a transparent conductive electrode that includes only a layer of zinc oxide and no work function modifying material.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: July 29, 2014
    Assignee: International Business Machines Corporation
    Inventors: Keith E. Fogel, Ning Li, Devendra K. Sadana
  • Patent number: 8779453
    Abstract: A light-emitting element that has an improved light-extraction efficiency and an improved color purity of an emitted light. A light-emitting element includes a reflective electrode, a transparent electrode, a light-emitting layer, a functional layer, and a color filter. An optical film thickness of the functional layer is from approximately 218 nm to approximately 238 nm for a light emitting element that emits a blue light. An optical film thickness of the functional layer is from approximately 384 nm to approximately 400 nm for a light emitting element that emits a red light.
    Type: Grant
    Filed: January 30, 2012
    Date of Patent: July 15, 2014
    Assignee: Panasonic Corporation
    Inventors: Keiko Kurata, Seiji Nishiyama, Takashi Isobe
  • Patent number: 8766297
    Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: July 1, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Toshihide Ito, Toshiyuki Oka, Kotaro Zaima, Taisuke Sato, Shinya Nunoue
  • Patent number: 8766293
    Abstract: A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: July 1, 2014
    Assignee: Genesis Photonics Inc.
    Inventors: Jyun-De Wu, Yu-Chu Li
  • Patent number: 8766263
    Abstract: In an IPS type liquid crystal display device having a reduced number of layers and formed through a reduced number of photolithography steps, an off current of a TFT is prevented from increasing due to photocurrent. A drain line, a TFT drain electrode, and a source electrode each have a multilayer structure including metal and a semiconductor layer. The drain line and the semiconductor layer formed thereunder are separated from the drain electrode and the semiconductor layer formed thereunder with the drain line and the drain electrode connected by a blocking conductive film formed of ITO of which the pixel electrode is also formed. Photocurrent generated by backlight is blocked by the blocking conductive film without flowing into the TFT. Therefore, the number of photomasks required in the production process can be decreased without an increase of causing the off current of the TFT.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: July 1, 2014
    Assignees: Japan Display Inc., Panasonic Liquid Crystal Display Co., Ltd.
    Inventor: Takahiro Nagami
  • Patent number: 8754426
    Abstract: A light source includes a substrate arranged into at least two facing surfaces which form a seam therebetween; and a lighting device with light emitting diode (LED) chips embedded therein in a linear arrangement. The LED chips generate light photons. The lighting device has a first edge and a second edge opposite to the first edge, the light photons within the lighting device that are emitted by the LED chips from a top surface of the LED chips being output from the lighting device at the second edge of the device. The lighting device is sandwiched in the seam between the two facing surfaces, the second edge of the lighting device being exposed when the seam is in an opened position.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: June 17, 2014
    Assignee: Grote Industries, LLC
    Inventors: Martin J. Marx, Richard C. Bozich, Stanley D. Robbins, James E. Roberts, Jennifer M. Ehlers
  • Patent number: 8748903
    Abstract: A semiconductor light emitting element (1) provided with an n-type semiconductor layer (140), a light emitting layer (150), a p-type semiconductor layer (160), a transparent electrode (170), a p-side electrode (300) formed on the transparent electrode, and an n-side electrode (400) formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer (310) and a p-side bonding pad electrode (320), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer (410) and an n-side bonding pad electrode (420), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: June 10, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Koji Kamei, Honglin Wang
  • Patent number: 8742422
    Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: June 3, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masayuki Sakakura, Yoshiaki Oikawa, Shunpei Yamazaki, Junichiro Sakata, Masashi Tsubuku, Kengo Akimoto, Miyuki Hosoba
  • Publication number: 20140145236
    Abstract: A method of increasing a work function of an electrode is provided. The method comprises obtaining an electronegative species from a precursor using electromagnetic radiation and reacting a surface of the electrode with the electronegative species. An electrode comprising a functionalized substrate is also provided.
    Type: Application
    Filed: April 13, 2012
    Publication date: May 29, 2014
    Inventors: Michael Helander, Zhibin Wang, Jacky Qiu, Zheng-Hong Lu
  • Patent number: 8735195
    Abstract: Disclosed is a method of manufacturing a ZnO-based semiconductor device having at least p-type ZnO-based semiconductor layer, which includes a step of forming a contact metal layer on the p-type ZnO-based semiconductor layer wherein the contact metal layer contains at least one of Ni and Cu; and a step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer including elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the contact metal layer.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: May 27, 2014
    Assignee: Stanley Electric Co., Ltd.
    Inventor: Naochika Horio
  • Patent number: 8735924
    Abstract: A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.
    Type: Grant
    Filed: March 16, 2012
    Date of Patent: May 27, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Shingo Totani, Kosuke Yahata, Yuya Ishiguro