Abstract: An optoelectonice device package, an array of optoelectronic device packages and a method of fabricating an optoelectronic device package. The array includes a plurality of optoelectronic device packages, each enclosing an optoelectronic device, and positioned in at least one row. Each package including two geometrically parallel transparent edge portions and two geometrically parallel non-transparent edge portions, oriented substantially orthogonal to the transparent edge portions. The transparent edge portions are configured to overlap at least one adjacent package, and may be hermetically sealed. The optoelectronic device portion fabricated using R2R manufacturing techniques.

Abstract: A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode layer, comprises a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; a light transmissive electrode layer formed on the second semiconductor layer, the light transmissive electrode layer having a structure in which at least one conductive thin film and at least one insulating thin film are deposited; and a first electrode formed on the light transmissive electrode layer, wherein the light transmissve electrode layer includes at least one contact portion for contacting the at least one conductive thin film with the first electrode.

Abstract: A display apparatus is disclosed. The display apparatus includes a transistor formed on a substrate; an interlayer insulator formed on the transistor; a pixel electrode formed on the interlayer insulator; a first partition located above a contact hole which penetrates the interlayer insulator; and a second partition which intersects with the first partition, or which is located on a straight line intersecting with the first partition, and which brings a width value of the pixel electrode to a predetermined value.

Abstract: A thin-film transistor (TFT) array substrate includes an active layer on a substrate and a lower electrode of a capacitor on the same level as the active layer, a first insulation layer on the active layer and the lower electrode and having a first gap exposing an area of the lower electrode; a gate electrode of the TFT on the first insulation layer, and an upper electrode of the capacitor on the lower electrode and the first insulation layer, the upper electrode having a second gap that exposes the first gap and a portion of the first insulation layer; a second insulation layer disposed between the gate electrode and source electrode and drain electrodes, and not disposed on the upper electrode, in the first gap of the first insulation layer, or in the second gap of the lower electrode.

Abstract: Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed between the bottom electrode and a transparent conducting layer. One or more electrical contacts between the transparent conducting layer and the back plane are formed through the transparent conducting layer, the active layer, the flexible bulk conductor and the insulating layer. The electrical contacts are electrically isolated from the active layer, the bottom electrode and the insulating layer.

Abstract: A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is formed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so that the LED chip is electrically connected to the metal circuit.

Abstract: A light source includes a substrate arranged into at least two facing surfaces which form a seam therebetween; and a lighting device with light emitting diode (LED) chips embedded therein in a linear arrangement. The LED chips generate light photons. The lighting device has a first edge and a second edge opposite to the first edge, the light photons within the lighting device that are emitted by the LED chips from a top surface of the LED chips being output from the lighting device at the second edge of the device. The lighting device is sandwiched in the seam between the two facing surfaces, the second edge of the lighting device being exposed when the seam is in an opened position.

Abstract: An organic light-emitting display device includes a capacitor lower electrode that includes a semiconductor material doped with ion impurities. A first insulating layer covers an active layer and the capacitor lower electrode. A gate electrode includes a gate lower electrode formed of a transparent conductive material and a gate upper electrode formed of metal. A pixel electrode is electrically connected to the thin film transistor. A capacitor upper electrode is at the same level as the pixel electrode. An etch block layer is formed between the first insulating layer and the capacitor upper electrode. Source and drain electrodes are electrically connected to the active layer. A second insulating layer has an opening completely exposing the capacitor upper electrode. A third insulating layer exposes the pixel electrode. An intermediate layer includes an emissive layer. An opposite electrode faces the pixel electrode.

Abstract: An object of the present invention is to provide a nitride semiconductor light emitting element having a novel transparent electrode. The nitride semiconductor light emitting element has the transparent electrode on a p-type nitride semiconductor layer, wherein the p-type nitride semiconductor layer and the transparent electrode can be in good ohmic contact to each other and wherein the variability of the forward voltage (Vf) within the wafer can be reduced. The present invention is a nitride semiconductor light emitting element including: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and a transparent electrode formed on the p-side nitride semiconductor layer, wherein the transparent electrode is made of indium oxide containing Ge and Si.

Abstract: A method of forming a transparent electrode includes forming a first transparent conductive material layer on a base; performing a plasma process on the first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into semitransparent; forming a second transparent conductive material layer on the first transparent conductive material layer; patterning the second transparent conductive material layer and the first transparent conductive material layer; and annealing the patterned second transparent conductive material layer and the patterned first transparent conductive material layer such that the upper portion of the first transparent conductive material layer is changed into transparent.

Abstract: A Group III nitride semiconductor light-emitting device exhibiting reduced contact resistance between a p contact layer and an ITO electrode. The Group III nitride semiconductor light-emitting device has an AlGaN dot-like structure on the p contact layer, and an ITO electrode on the p contact layer and the dot-like structure. The dot-like structure has a structure in which a plurality of AlGaN dots are discretely distributed on the top surface of the p contact layer. The dot-like structure is bonded to oxygen, and oxygen increases on an interface between the p contact layer and the ITO electrode.

Abstract: A method for fabricating a pixel structure includes providing a substrate having a pixel area. A first metal layer, a gate insulator and a semiconductor layer are formed on the substrate and patterned by using a first half-tone mask or a gray-tone mask to form a transistor pattern, a lower capacitance pattern and a lower circuit pattern. Next, a dielectric layer and an electrode layer both covering the three patterns are sequentially formed and patterned to expose a part of the lower circuit pattern, a part of the lower capacitance pattern and a source/drain region of the transistor pattern. A second metal layer formed on the electrode layer and the electrode layer are patterned by using a second half-tone mask or the gray-tone mask to form an upper circuit pattern, a source/drain pattern and an upper capacitance pattern. A portion of the electrode layer constructs a pixel electrode.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes a substrate; a gate line disposed on the substrate; a gate insulating layer disposed on the gate line; a semiconductor disposed on the gate insulating layer; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a first electrode disposed on the gate insulating layer; a protection electrode disposed on the data line; a passivation layer disposed on the first electrode and the protection electrode; and a second electrode disposed on the passivation layer, wherein the protection electrode comprises the same material as the first electrode.

Abstract: A light-emitting diode device includes: a substrate including first and second conductors; a light-emitting diode die including first and second polarity sides, and a surrounding surface formed between the first and second polarity sides; an insulator disposed around the surrounding surface; a transparent conductive layer extending from the second polarity side of the light-emitting diode die oppositely of the substrate, along an outer surface of the insulator, and to the second conductor; and a reflecting cup formed on the substrate to define a space with the substrate. The light-emitting diode die, the insulator and the transparent conductive layer are disposed in the space.

Abstract: A light-emitting diode structure includes first and second conductors, and a light-emitting diode unit. The light-emitting diode unit includes: a light-emitting diode die including first and second polarity sides, and a surrounding surface, the first polarity side being electrically connected to the first conductor; an insulator disposed around the surrounding surface; and a transparent conductive film extending from the second polarity side, along an outer surface of the insulator, and to the second conductor, so that the second polarity side is electrically connected to the second conductor through the transparent conductive film.

Abstract: An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

Abstract: In a display apparatus including pixels, each of which has organic EL elements which emit red, green, and blue (RGB) colors and a refractive index-control layer, an electrode at a light extraction side of each organic EL element is a silver layer in contact with a charge transport layer, the refractive index-control layer is arranged on the silver layer in common with the organic EL elements which emit RGB colors, and an effective refractive index (neff) represented by the following formula is in a range of 1.4 to 2.3. neff=0.7×nu+0.3×nd In the above formula, nu indicates the refractive index of the refractive index-control layer 3, and nd indicates the refractive index of the charge transport layer 1.

Abstract: An electrode, which includes a magnetic material to improve the flow of charges, and an organic light emitting device using the electrode. The electrode for the organic light emitting device has an excellent charge injection property, so that it is possible to improve the efficiency of light emission of the organic light emitting device.

Abstract: An anode for an organic light emitting device which introduces a metal oxide to improve flows of charges, and an organic light emitting device using the anode. The anode for the organic light emitting device has excellent charge injection characteristics, thereby improving power consumption of the organic light emitting device.

Abstract: According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating a first semiconductor layer of a first conductivity type having a first sheet resistance, a light emitting layer, and a second semiconductor layer of a second conductivity type and includes a cutout unit formed at an end side and an indentation unit extending from the cutout unit in a first direction toward the other end side and branching or bending in a second direction substantially perpendicular to the first direction as well as bending or branching in a direction opposite to the second direction. A transparent conductive film is formed on the semiconductor laminated body and has a second sheet resistance less than the first sheet resistance. A first thin wire electrode is formed along the indentation unit. A second thin wire electrode is formed on the transparent conductive film.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, a first electrode on the first conductive semiconductor layer, a transparent electrode on the second conductive semiconductor layer, and a second electrode on the transparent electrode. The first electrode includes a first electrode pad on a first region of the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer and a first electrode finger part extending from the first electrode pad toward a second region, in which the first conductive semiconductor layer is exposed. A gap between the transparent electrode and the first electrode finger part is gradually narrowed from the first region toward the second region.

Abstract: In one aspect, a cathode including the first metal layer, the transparent conductive layer formed on the first metal layer, and the second metal layer formed on the transparent conductive layer is applied to the organic light emitting device and thicknesses of the first metal layer, the transparent conductive layer, and the second metal layer are controlled so that the external light reflection of the organic light emitting device is prevented. The cathode may further include the third metal layer formed on the second metal layer.

Abstract: The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting device 1 includes: a p-type semiconductor layer 14; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrode 15 that is formed on the p-type semiconductor layer 14. The transparent electrode 15 includes a crystallized IZO film.

Abstract: In one or more embodiments, display devices having electrolessly plated conductors and methods are disclosed. One such embodiment is directed to a method of forming a reflective pixel array for a display device, including forming a plurality of conductive pads, each of the conductive pads corresponding to a reflective pixel, and electrolessly plating each of the conductive pads with a reflective conductor.

Abstract: An organic light emitting display device and a method of manufacturing the device are disclosed. The method includes forming a layer over an oxide semiconductor layer to protect the oxide semiconductor layer from damage as further layers are formed and etched.

Abstract: A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode layer and a second electrode layer. The first semiconductor layer includes a first portion and a second portion thicker than the first portion. The second portion includes a side surface rising from a major surface of the first portion. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode layer is provided along the major surface of the first portion and is in contact with the side surface of the second portion. The second electrode layer is provided on the second semiconductor layer.

Abstract: There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced.

Abstract: A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.

Abstract: Disclosed are a microarray type nitride light emitting device and a method of manufacturing the same. More particularly, a uniform current distribution property is ensured by dividing a fine light emitting region by using a first transparent contact layer according to a resistance change property in heat treatment of a material of a transparent conducting oxide used as a transparent contact layer, and connecting the divided light emitting regions by using a second transparent contact layer.

Abstract: An organic light-emitting device includes a substrate, an anode including Ag on the substrate, a transparent inorganic thin-film layer on the anode, the transparent inorganic thin-film layer being in contact with the anode and having non-conductive characteristics; and an emitting layer and a cathode disposed sequentially on the inorganic thin-film layer.

Abstract: A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

Abstract: According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a plurality of thin parts thinner than other part being provided in the first semiconductor layer; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. A transparent electrode is provided on a surface of the first semiconductor layer; a first electrode is provided on the transparent electrode; and a second electrode contacts a surface of the second semiconductor layer, wherein the second semiconductor layer is provided between the second electrode and the light emitting layer. A current blocking layer is provided for blocking a part of a current path between the transparent electrode and the second electrode, not overlapping the thin part in a planar view parallel to the surface of the second semiconductor layer.

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED toward a peripheral region of the LED.

Abstract: A three mask process for forming an LCD substrate includes, depositing in sequence on a base substrate a gate metallic layer, a gate insulation layer and a channel layer. A first photoresist pattern is used to form a gate electrode of a switching device, a channel pattern and a gate line on the gate electrode. A transparent conductive layer and a source metallic layer are deposited in sequence on the base substrate having the channel pattern. A source electrode and a drain electrode of the switching device, a pixel electrode and a source line electronically connected to the drain electrode, are formed by a second photoresist pattern. A first protective insulation layer is formed, and the first protective insulation layer on the pixel electrode is removed by a third photoresist pattern. Therefore, by the three masks process yields a simplified manufacturing process in which the lower portion of the source metallic pattern is not formed and display quality is improved.

Abstract: A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer.

Abstract: It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer.

Abstract: Embodiments relate to a semiconductor light-emitting structure. The semiconductor light-emitting structure according to embodiments comprises a plurality of compound semiconductor layers; a multi-layered transparent layer on the light emitting structure comprising plurality of compound semiconductor layers and a metal layer between the transparent layers; and an electrode electrically connected to the metal layer.

Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: A light emitting diode includes a substrate comprising a plurality of first grooves and a plurality of first convex parts formed on a surface of the substrate, with the first groove formed between two neighboring first convex parts; a semiconductor structure formed on the substrate comprising a plurality of second convex parts corresponding to the plurality of first grooves and a plurality of second grooves corresponding to the plurality of first convex parts; a transparent conductive layer formed on the semiconductor structure and configured to transmit a current to the plurality of second convex parts; a first electrode electrically connected with the semiconductor structure; and a second electrode electrically connected with the transparent conductive layer. A method for preparing the light emitting diode is also provided.

Abstract: A thin film transistor array panel is provided, which includes a substrate, a plurality of gate line formed on the substrate, a plurality of common electrodes having a transparent conductive layer on the substrate, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer and the gate insulating layer, a plurality of drain electrodes formed on the semiconductor layer and the gate insulating layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes.

Abstract: Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element. The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.

Abstract: Provided are an organic light emitting display device (OLED) and a method of fabricating the same. When a electrically conductive line and a gate electrode are formed at the same time or when a first electrode is formed, interconnections for electrically connecting elements are formed. Thus, the number of used masks can be reduced, so that the overall fabrication process can be shortened and the production cost can be reduced.

Abstract: According to an embodiment, a semiconductor light emitting device includes a stacked body, a transparent electrode layer, a first electrode and a second electrode. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The transparent electrode layer is provided on a surface of the second semiconductor layer and transmitting light emitted from the light emitting layer. The first electrode is electrically connected to the transparent electrode layer; and the second electrode is electrically connected to the first semiconductor layer. A region is provided along an edge of the transparent electrode layer with a part of the transparent electrode layer having a thickness smaller on the edge side than a thickness on a central side.

Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

Abstract: An organic light emitting diode device includes a substrate, a thin film transistor on the substrate, a first pixel electrode electrically connected to the thin film transistor, a pixel defining layer on the first pixel electrode and partitioning a light emitting region, a second pixel electrode contacting the first pixel electrode at the light emitting region, a light emitting layer contacting the second pixel electrode at the light emitting region, and a common electrode on the light emitting layer; and a method of manufacturing the same is provided.

Abstract: A light emitting chip includes a substrate, a buffer layer, a cap layer and a light emitting structure. The buffer layer is formed on the substrate and includes a carbon nano tube structure substantially parallel to the substrate. The carbon nano tube structure is comprised of nitride semiconductor. The cap layer grows from the buffer layer. The light emitting structure is formed on the cap layer. The light emitting structure sequentially includes a first cladding layer connected to the cap layer, a light emitting layer, and a second cladding layer.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: The image display device according to the present invention is an image display device where a pixel unit and an external connection terminal unit are provided on a substrate (SUB), and the pixel unit and the external connection terminal unit are connected by an aluminum wire (LN), having; an organic protective film (OPAS) directly covering the aluminum wire, except a contact hole (CH) of the external connection terminal unit and part of the pixel unit; and an ITO film (ITO) provided on the upper side of the organic protective film so as to cover the aluminum wire, including the external connection terminal unit and reaching to the pixel unit.