Abstract: According to one embodiment, a display device includes a substrate, first and second insulating layers, first and second pixel electrodes, first and second organic layers, first and second feed lines, first and second partitions, and a common electrode including first and second parts covering the first and second organic layers. The first organic layer is between the partitions. The second feed line and the second partition are located between the organic layers. The partitions are shaped such that a width of an upper part is greater than a width of a lower part. The first part is in contact with the first feed line between the first partition and the first organic layer.

Abstract: A display panel and a display device are disclosed. The display panel includes an array substrate, an electrode layer disposed on the array substrate, a light-emitting layer disposed on the electrode layer, and a cathode layer disposed on the light-emitting layer. The electrode layer includes an anode and a contact electrode disposed apart from each other on the array substrate. The contact electrode has a pattern, the contact electrode contacts the cathode layer through the light-emitting layer.

Abstract: An organic light-emitting display device includes: a substrate; a pixel electrode on the substrate; a pixel defining layer having a first opening exposing a center portion of the pixel electrode; a barrier layer on the pixel defining layer; an intermediate layer including a first common layer, a first emissive layer, and a second common layer sequentially arranged on the pixel electrode, the pixel defining layer, and the barrier layer; and a first opposite electrode covering the intermediate layer. The barrier layer has a second opening that is larger than the first opening and has an undercut structure.

Abstract: A display device and a manufacturing method thereof are provided. The display device includes a display area and a non-display area. The display device includes a substrate, an element layer, an electrode pattern layer, a photoresist pattern layer, and a light-emitting element. The element layer is disposed on the substrate. The electrode pattern layer is disposed on the element layer, and the electrode pattern layer includes multiple electrodes. The photoresist pattern layer is disposed on the electrode pattern layer, and the photoresist pattern layer includes a first photoresist pattern disposed corresponding to the display area and corresponding to the electrodes; a second photoresist pattern disposed corresponding to the non-display area and between the electrodes. The light-emitting element is disposed on the photoresist pattern layer and is electrically connected to the electrodes of the electrode pattern layer.

Abstract: A display device includes: a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate electrode; a first transparent conductive layer above the first transistor; a second transparent conductive layer above the first transparent conductive layer, the second transparent conductive layer being isolated from the first transparent conductive layer and facing the first transparent conductive layer; and a third transparent conductive layer above the second transparent conductive layer, the third transparent conductive layer being isolated from the second transparent conductive layer, being connected to the first transparent conductive layer and facing the second transparent conductive layer.

Abstract: An organic light-emitting display device includes: a substrate; a pixel electrode on the substrate; a pixel defining layer having a first opening exposing a center portion of the pixel electrode; a barrier layer on the pixel defining layer; an intermediate layer including a first common layer, a first emissive layer, and a second common layer sequentially arranged on the pixel electrode, the pixel defining layer, and the barrier layer; and a first opposite electrode covering the intermediate layer. The barrier layer has a second opening that is larger than the first opening and has an undercut structure.

Abstract: A display apparatus and a method of manufacturing the same are disclosed. The display apparatus includes at least one light emitting diode chip, a conductive portion disposed under the light emitting diode chip and coupled to the light emitting diode chip, and an insulating material surrounding the conductive portion. The conductive portion includes a first conductive portion and a second conductive portion, and the insulating material is formed to expose at least a portion of the upper surfaces of the first conductive portion and the second conductive portion.

Abstract: The present disclosure provides a pixel structure, a displaying substrate, a displaying device and a displaying method, wherein the pixel structure includes first sub-pixels, second sub-pixels and third sub-pixels that are located within a first virtual tetragon; the first sub-pixels are located individually adjacent to midpoints of four side edges of the first virtual tetragon; the second sub-pixels are located individually at four interior angles of the first virtual tetragon; and two center lines of the first virtual tetragon delimit the first virtual tetragon into four second virtual tetragons, and the third sub-pixels are located individually at first interior angles within the four second virtual tetragons.

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

Abstract: An electroluminescent display device can include a plurality of pixels arranged in a matrix form along a first direction and a second direction, each pixel including first, second, and third sub-pixels, and a first bank pattern having a first height, and a second bank pattern having a second height, the first height being smaller than the second height, wherein the second bank pattern is parallel in two directions. The first bank pattern defines same color sub-pixels of different pixels, and wherein the second bank pattern defines different color sub-pixels of the same pixel. The second bank pattern includes first patterns disposed between the adjacent different color sub-pixels along a third direction crossing the first and second directions and between the adjacent different color sub-pixels along a fourth direction crossing the first, second, and third directions and second patterns disposed between the second sub-pixels adjacent to each other.

Abstract: An array substrate and a display device are disclosed. The array substrate includes a first block group, a second block group, a third block group and a fourth block group, a connection line between a center of the first color sub-pixel block of the first block group and a center of the first color sub-pixel block of the second block group has a first length in the first direction, a distance between center of the first color sub-pixel block of the first block group and center of the first color sub-pixel block of the third block group ranges from the first length to 3/2 of the first length, a distance between center of the first color sub-pixel block of the fourth block group and center of the first color sub-pixel block of the second block group ranges from ½ of the first length to the first length.

Abstract: A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.

Abstract: An electronic device includes a first substrate; a second substrate arranged opposite to the first substrate; a first electrode layer disposed on the first substrate; a display medium layer disposed between the first electrode layer and the second substrate; and a first metal element, wherein the first metal element is fixed on the first electrode layer through a conductive glue and an insulating glue; wherein in a normal direction of the first substrate, the conductive glue and the insulating glue are overlapped.

Abstract: A flexible touch panel is provided. Both reduction in thickness and high sensitivity of a touch panel are achieved. The touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over the light-emitting element, a pair of sensor electrodes over the color filter, a second insulating layer over the sensor electrodes, a second flexible substrate over the second insulating layer, and a protective layer over the second substrate. A first bonding layer is between the light-emitting element and the color filter. The thickness of the first substrate and the second substrate is each 1 ?m to 200 ?m inclusive. The first bonding layer includes a region with a thickness of 50 nm to 10 ?m inclusive.

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.

Abstract: A method for manufacturing a light-emitting element includes dividing a semiconductor structure into a plurality of light-emitting portions by removing a portion of the semiconductor structure so as to form an exposed region, a first surface being exposed from under the semiconductor structure in the exposed region; etching protrusions formed in the exposed region; bonding a light-transmitting body to a second surface so as to form a bonded body; forming a plurality of modified regions along the exposed region inside the substrate by irradiating a laser beam on the exposed region from the first surface side; removing a portion of the light-transmitting body that overlaps the plurality of modified regions in a plan view; and singulating the bonded body along the modified regions.

Abstract: The present disclosure relates to a light detection device including: a substrate 100; a lower electrode 200 formed on the substrate; an organic semiconductor layer 300 formed on the lower electrode 200; and an upper electrode 400 formed on the organic semiconductor layer 300, wherein a Schottky contact is formed at least one of a junction between the organic semiconductor layer and the lower electrode or a junction between the organic semiconductor layer and the upper electrode.

Abstract: A display device with a reduced area of dead spaces and a low defect occurrence rate includes a substrate including a display area and a peripheral area; and a first insulating layer disposed over the peripheral area and including a first side surface portion, a second side surface portion, and at least one recess portion. The first side surface portion includes a side surface aligned with a side surface of the substrate, and the second side surface portion includes a side surface aligned with the side surface of the substrate and is spaced apart from the first side surface portion. A first pad is disposed on the first insulating layer, extends to an edge of the substrate, fills the at least one recess portion, and includes a front end surface aligned with the side surface of the substrate.

Abstract: A light emitting device including a body having a recess; a light emitting chip disposed in the recess; a first dampproof layer sealing the light emitting chip and extended from a surface of the light emitting chip to a bottom of the recess; a light transmitting layer disposed on the recess; and a second dampproof layer having an open area in which an upper surface of the light transmitting layer is exposed and extended from an outer side area of the upper surface of the light transmitting layer to an upper surface and a side surface of the body. Further, the first dampproof layer and the second dampproof layer include a fluororesin-based material.

Abstract: A display device is provided. The display device includes: a substrate, a first display area in which a plurality of main sub-pixels are arranged on the substrate, and a second display area in which a basic unit is arranged, the basic unit including an auxiliary light-emitting area, in which a plurality of auxiliary sub-pixels are arranged on the substrate, and a transmission portion, wherein each of the plurality of auxiliary sub-pixels includes a pixel electrode on the substrate, an intermediate layer on the pixel electrode, and an opposite electrode on the intermediate layer, wherein intermediate layers of auxiliary sub-pixels for emitting light of a same color from among the plurality of auxiliary sub-pixels are connected to each other.

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed over and extending laterally past a base structure disposed over the PDL structure. Each second overhang is defined by a top structure disposed over and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed over the HIL material and extends under the first overhang.

Abstract: A display apparatus includes a substrate including a base portion and a plurality of connection portions extending from the base portion in different directions, a pixel circuit arranged on the base portion and including a thin-film transistor and a storage capacitor, an organic insulating layer on the pixel circuit, a pixel electrode arranged on the organic insulating layer and electrically connected to the pixel circuit, a first auxiliary wiring layer arranged on the organic insulating layer, an opposite electrode overlapping the pixel electrode, and an emission layer between the pixel electrode and the opposite electrode. The organic insulating layer includes a first recess portion, the first auxiliary wiring layer has a first tip protruding from a side surface of the organic insulating layer in a width direction of the first auxiliary wiring layer, and the side surface defines the first recess portion.

Abstract: A semiconductor light-emitting device includes: a substrate, an epitaxial layer structure disposed on the substrate, a first current blocking layer disposed on the epitaxial layer structure, a second current blocking layer disposed on the epitaxial layer structure, a current spreading layer disposed on the epitaxial layer structure and covering the first current blocking layer; a first electrode disposed on a side of the current spreading layer facing away from the epitaxial layer structure, and a second electrode disposed on the epitaxial layer structure and covering the second current blocking layer. The first current blocking layer includes a first main blocking portion and a first extended blocking portion. The second current blocking layer includes a second main blocking portion and a second extended blocking portion. The second extended blocking portion includes spacings. The first extended blocking portion is formed with convex structures. The convex structures are aligned with the spacings.

Abstract: An array substrate and an electronic device are disclosed. The array substrate includes a plurality of repeating regions, each repeating region includes a plurality of block groups, in each repeating region, the second base edge of the second color sub-pixel block and the third base edge of the third color sub-pixel block in the second block group are located on a first virtual line, the second base edge of the second color sub-pixel block and the third base edge of the third color sub-pixel block in the first second block group are located on a second virtual line, the first color sub-pixel block in the first block group and the first color sub-pixel block in the second block group are located between the first virtual line and the second virtual line.

Abstract: Embodiments described herein generally relate to sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes substrate, pixel-defining layer (PDL) structures disposed over the section of the substrate, inorganic or metal overhang structures disposed on an upper surface of the PDL structures, and a plurality of sub-pixels. The PDL structures include a trench disposed in the top surface of the PDL structure. Each sub-pixel includes an anode, an OLED material disposed over and in contact with the anode, and a cathode disposed over the OLED material. The inorganic or metal overhang structures have an overhang extension that extends laterally over the trench. An encapsulation layer is disposed over the cathode and extends under at least a portion of the inorganic or metal overhang structures and along a top surface of the PDL structures.

Abstract: A display substrate having a plurality of subpixels is provided. The display substrate includes a base substrate; and a pixel definition layer defining a plurality of subpixel apertures. The pixel definition layer includes a smart material sub-layer comprising a smart insulating material. The display substrate in a respective one of the plurality of subpixels includes an organic light emitting layer in a respective one of the plurality of subpixel apertures.

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.

Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.

Abstract: A light-emitting unit with small energy loss is provided. Further, a light-emitting unit with high reliability is provided. A light-emitting unit is provided in the following manner: a separation layer including a leg portion and a stage portion, which protrudes over an electrode is formed so that a projected area of the stage portion is larger than that of the leg portion; a layer containing a light-emitting organic compound, an upper electrode of the first light-emitting element, and an upper electrode of the second light-emitting element are formed; and the upper electrode of the first light-emitting element is electrically connected to a lower electrode of the second light-emitting element in a region overlapping with the stage portion of the separation layer.

Abstract: The invention relates to an optoelectronic semiconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic semiconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.

Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

Abstract: A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts.

Abstract: A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.

Abstract: There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

Abstract: A method and apparatus for constructing MEMS devices is provided which employs a low cost molded housing that simultaneously provides precise and accurate alignment, mechanical protection, electrical connections and structural integrity for mounting optical and MEMS components. The package includes a MEMS die mounting surface, an optical component mounting surface and an optical imaging window monolithically fabricated with the MEMS die mounting surface in a predetermined orientation for providing alignment between the MEMS die and optical components. A MEMS adaptor plate is provided to facilitate connections of a MEMS die to external components.

Abstract: A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.

Abstract: An organic light-emitting display apparatus includes a buffer layer that is on a substrate and includes nanoparticles including nickel (Ni), a pixel electrode on the buffer layer, an organic emission layer on the pixel electrode, and an opposite electrode on the organic emission layer. A method of manufacturing the organic light-emitting display apparatus is provided.

Abstract: A thin film transistor (TFT) array substrate is provided that includes a TFT on a substrate. The TFT can include an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes. A pixel electrode is disposed on the first and second insulating layers. A capacitor including a lower electrode is disposed on a same layer as the gate electrode and an upper electrode. A third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode. A fourth insulating layer covers the source electrode, the drain electrode, and the upper electrode, and exposes the pixel electrode and can further expose a pad electrode.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer.

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract: Disclosed is a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed on between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The first semiconductor layer is formed, at an edge portion thereof, with a hole, in which a portion of the first electrode is arranged.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: A light emitting device includes a light emitting layer having a first side and a second side opposite to the first side; an upper electrode; a current diffusion layer provided between the light emitting layer and the upper electrode and including a first layer on the first side of the light emitting layer and a second layer on a side of the upper electrode, the second layer having a carrier concentration higher than a concentration of the first layer, a recess being formed in a non-forming region of the upper electrode of the current diffusion layer so that a width of the recess decreases toward the light emitting layer, a sidewall of the second layer being at least a part of a sidewall of the recess; and a reflecting layer provided on the second side of the light emitting layer, the upper electrode being provided on the second layer, and the light emitting layer and the current diffusion layer being made of a III-V group compound semiconductor, respectively.

Abstract: Disclosed is a method of fabricating a light-emitting diode package, which comprises a light-emitting chip operative to emit light of a first wavelength range. The method comprises the steps of: dispensing a photoluminescent mixture on the light-emitting chip, the photoluminescent mixture being capable of absorbing a portion of light of the first wavelength range emitted from the light-emitting chip to re-emit light of a second wavelength range; partially curing the photoluminescent mixture by heating the photoluminescent mixture to a pre-curing temperature and then cooling the photoluminescent mixture to below the pre-curing temperature; and fully curing the photoluminescent mixture to harden the photoluminescent mixture. An apparatus for fabricating a light-emitting diode package is also disclosed.

Abstract: Disclosed is a light emitting apparatus. The light emitting apparatus includes a package body; first and second electrodes; a light emitting device electrically connected to the first and second electrodes and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; and a lens supported on the package body and at least a part of the lens including a reflective structure. The package body includes a first cavity, one ends of the first and second electrodes are exposed in the first cavity and other ends of the first and second electrodes are exposed at lateral sides of the package body, and a second cavity is formed at a predetermined portion of the first electrode exposed in the first cavity.

Abstract: Systems, and methods for the design and fabrication of OLEDs, including large-area OLEDs with metal bus lines, are provided. For a given panel area dimension, target luminous emittance, OLED device structure and efficiency (as given by the JVL characteristics of an equivalent small area pixel), and electrical resistivity and thickness of the bus line material and electrode onto which the bus lines are disposed, a bus line pattern may be designed such that Fill Factor (FF), Luminance Uniformity (U) and Power Loss (PL) may be optimized. One general design objective may be to maximize FF, maximize U and minimize PL. Another approach may be, for example, to define minimum criteria for U and a maximum criteria for PL, and then to optimize the bus line layout to maximize FF. OLED panels including bus lines with different resistances (R1) along a length of the bus line are also described.