Electrodes (epo) Patents (Class 257/E33.062)
  • Patent number: 9601667
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer; an electrode structure on the light-emitting stack and comprising a first electrode and an extension electrode protruding from the first electrode toward an edge of the light-emitting device in a first extending direction; a transparent insulating layer between the light-emitting stack and the electrode structure, wherein the transparent insulating layer comprises a first part and an extension part protruding from the first part toward the edge of the light-emitting device in a second extending direction; wherein a surface area of a surface of the first electrode distal from the transparent insulating layer is smaller than a surface area of a surface of the transparent insulating layer distal from the light-emitting stack, the first electrode is right above the first part, and a part of the extension electrode is right above the extension part.
    Type: Grant
    Filed: January 22, 2016
    Date of Patent: March 21, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Wen-Luh Liao, Hung-Ta Cheng, Yao-Ru Chang, Shih-I Chen, Chia-Liang Hsu
  • Patent number: 9041020
    Abstract: The invention relates to an optoelectronic semiconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic semiconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: May 26, 2015
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Siegfried Herrmann, Helmut Fischer
  • Patent number: 9041026
    Abstract: A light-emitting unit with small energy loss is provided. Further, a light-emitting unit with high reliability is provided. A light-emitting unit is provided in the following manner: a separation layer including a leg portion and a stage portion, which protrudes over an electrode is formed so that a projected area of the stage portion is larger than that of the leg portion; a layer containing a light-emitting organic compound, an upper electrode of the first light-emitting element, and an upper electrode of the second light-emitting element are formed; and the upper electrode of the first light-emitting element is electrically connected to a lower electrode of the second light-emitting element in a region overlapping with the stage portion of the separation layer.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: May 26, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 9035330
    Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: May 19, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jin-Goo Kang, Mu-Hyun Kim, Jae-Bok Kim, Dong-Kyu Lee, Ji-Young Kim
  • Patent number: 9035333
    Abstract: A semiconductor light emitting device includes an LED chip, which includes an n-type semiconductor layer, active layer, and p-type semiconductor layer stacked on a substrate. The LED chip further includes an anode electrode connected to the p-type semiconductor, and a cathode connected to the n-type semiconductor. The anode and cathode electrodes face a case with the LED chip mounted thereon. The case includes a base member including front and rear surfaces, and wirings including a front surface layer having anode and cathode pads formed at the front surface, a rear surface layer having anode and cathode mounting electrodes formed at the rear surface, an anode through wiring connecting the anode pad and the anode mounting electrode and passing through a portion of the base member, and a cathode through wirings connecting the cathode pad and the cathode mounting electrode and passing through a portion of the base member.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: May 19, 2015
    Assignee: Rohm Co., Ltd.
    Inventor: Tomoichiro Toyama
  • Patent number: 9029906
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: May 12, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 9024351
    Abstract: A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: May 5, 2015
    Assignee: Huga Optotech Inc.
    Inventors: Der-Wei Tu, Wei-Chih Wen, Tai-Chun Wang, Po-Hung Lai, Chih-Ping Hsu
  • Patent number: 9018724
    Abstract: A method and apparatus for constructing MEMS devices is provided which employs a low cost molded housing that simultaneously provides precise and accurate alignment, mechanical protection, electrical connections and structural integrity for mounting optical and MEMS components. The package includes a MEMS die mounting surface, an optical component mounting surface and an optical imaging window monolithically fabricated with the MEMS die mounting surface in a predetermined orientation for providing alignment between the MEMS die and optical components. A MEMS adaptor plate is provided to facilitate connections of a MEMS die to external components.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: April 28, 2015
    Assignee: AdvancedMEMS LLP
    Inventors: Albert Ting, Daniel T. McCormick, Michael Rattner
  • Patent number: 9018666
    Abstract: There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
    Type: Grant
    Filed: March 22, 2010
    Date of Patent: April 28, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Pun Jae Choi, Ki Yeol Park, Sang Bum Lee, Seon Young Myoung, Myong Soo Cho
  • Patent number: 9012949
    Abstract: A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: April 21, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo, Hideto Ohnuma, Hajime Kimura, Yasuhiro Jinbo
  • Patent number: 9012915
    Abstract: An organic light-emitting display apparatus includes a buffer layer that is on a substrate and includes nanoparticles including nickel (Ni), a pixel electrode on the buffer layer, an organic emission layer on the pixel electrode, and an opposite electrode on the organic emission layer. A method of manufacturing the organic light-emitting display apparatus is provided.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: April 21, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jae-Hwan Oh, Yeoung-Jin Chang, Seong-Hyun Jin, Won-Kyu Lee, Jae-Beom Choi
  • Patent number: 9000444
    Abstract: A thin film transistor (TFT) array substrate is provided that includes a TFT on a substrate. The TFT can include an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes. A pixel electrode is disposed on the first and second insulating layers. A capacitor including a lower electrode is disposed on a same layer as the gate electrode and an upper electrode. A third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode. A fourth insulating layer covers the source electrode, the drain electrode, and the upper electrode, and exposes the pixel electrode and can further expose a pad electrode.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: April 7, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: June-Woo Lee, Jae-Beom Choi, Kwan-Wook Jung, Jae-Hwan Oh, Seong-Hyun Jin, Kwang-Hae Kim, Jong-Hyun Choi
  • Patent number: 8994054
    Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Muramoto, Shinya Nunoue, Toshiyuki Oka
  • Patent number: 8987772
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: March 24, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang-Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 8981411
    Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: March 17, 2015
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Shu-Ting Hsu, Yen-Wen Chen, Chien-Yuan Wang, Ru-Shi Liu, Min-Hsun Hsieh
  • Patent number: 8981420
    Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.
    Type: Grant
    Filed: May 18, 2006
    Date of Patent: March 17, 2015
    Assignee: Nichia Corporation
    Inventors: Takeshi Kususe, Yoshiyuki Aihara, Daisuke Sanga, Kouichiroh Deguchi
  • Patent number: 8969892
    Abstract: Disclosed is a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed on between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The first semiconductor layer is formed, at an edge portion thereof, with a hole, in which a portion of the first electrode is arranged.
    Type: Grant
    Filed: October 11, 2011
    Date of Patent: March 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: WooSik Lim, SungKyoon Kim, MinGyu Na, SungHo Choo, MyeongSoo Kim, HeeYoung Beom
  • Patent number: 8969901
    Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: March 3, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Young Choi, Jae Ho Han, Ki Seok Kim, Wan Ho Lee, Myeong Ha Kim, Hae Soo Ha
  • Patent number: 8963194
    Abstract: A light emitting device includes a light emitting layer having a first side and a second side opposite to the first side; an upper electrode; a current diffusion layer provided between the light emitting layer and the upper electrode and including a first layer on the first side of the light emitting layer and a second layer on a side of the upper electrode, the second layer having a carrier concentration higher than a concentration of the first layer, a recess being formed in a non-forming region of the upper electrode of the current diffusion layer so that a width of the recess decreases toward the light emitting layer, a sidewall of the second layer being at least a part of a sidewall of the recess; and a reflecting layer provided on the second side of the light emitting layer, the upper electrode being provided on the second layer, and the light emitting layer and the current diffusion layer being made of a III-V group compound semiconductor, respectively.
    Type: Grant
    Filed: June 11, 2013
    Date of Patent: February 24, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Chisato Furukawa, Takafumi Nakamura
  • Patent number: 8956892
    Abstract: Disclosed is a method of fabricating a light-emitting diode package, which comprises a light-emitting chip operative to emit light of a first wavelength range. The method comprises the steps of: dispensing a photoluminescent mixture on the light-emitting chip, the photoluminescent mixture being capable of absorbing a portion of light of the first wavelength range emitted from the light-emitting chip to re-emit light of a second wavelength range; partially curing the photoluminescent mixture by heating the photoluminescent mixture to a pre-curing temperature and then cooling the photoluminescent mixture to below the pre-curing temperature; and fully curing the photoluminescent mixture to harden the photoluminescent mixture. An apparatus for fabricating a light-emitting diode package is also disclosed.
    Type: Grant
    Filed: January 10, 2012
    Date of Patent: February 17, 2015
    Assignee: ASM Technology Singapore Pte. Ltd.
    Inventors: Kui Kam Lam, Ka Yee Mak, Yiu Yan Wong, Ming Li
  • Patent number: 8946743
    Abstract: Disclosed is a light emitting apparatus. The light emitting apparatus includes a package body; first and second electrodes; a light emitting device electrically connected to the first and second electrodes and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; and a lens supported on the package body and at least a part of the lens including a reflective structure. The package body includes a first cavity, one ends of the first and second electrodes are exposed in the first cavity and other ends of the first and second electrodes are exposed at lateral sides of the package body, and a second cavity is formed at a predetermined portion of the first electrode exposed in the first cavity.
    Type: Grant
    Filed: October 14, 2010
    Date of Patent: February 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bong Kul Min
  • Patent number: 8928017
    Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: January 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-hee Chae, Young-soo Park, Bok-ki Min, Jun-youn Kim, Hyun-gi Hong
  • Patent number: 8927996
    Abstract: An organic light emitting diode (OLED) display device, including a first substrate and a second substrate facing each other, a sealant arranged between the first and second substrates to adhere the first and second substrates together, a plurality of interconnections arranged on one of the first and second substrates and a plurality of cladding parts covering at least a portion of each of the plurality of interconnections at a location that corresponds to the sealant, each of the cladding parts including a material having a higher melting point than that of the interconnections. By including the cladding parts, a short circuit between the interconnections caused by heat applied to the sealant can be prevented, and safety and reliability of the OLED display device can be improved.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: January 6, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Seung-Yeon Cho, Zail Lhee, Tae-Wook Kang, Hun Kim, Mi-Sook Suh, Hyun-Chol Bang
  • Patent number: 8927308
    Abstract: Systems, and methods for the design and fabrication of OLEDs, including large-area OLEDs with metal bus lines, are provided. For a given panel area dimension, target luminous emittance, OLED device structure and efficiency (as given by the JVL characteristics of an equivalent small area pixel), and electrical resistivity and thickness of the bus line material and electrode onto which the bus lines are disposed, a bus line pattern may be designed such that Fill Factor (FF), Luminance Uniformity (U) and Power Loss (PL) may be optimized. One general design objective may be to maximize FF, maximize U and minimize PL. Another approach may be, for example, to define minimum criteria for U and a maximum criteria for PL, and then to optimize the bus line layout to maximize FF. OLED panels including bus lines with different resistances (R1) along a length of the bus line are also described.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: January 6, 2015
    Assignee: Universal Display Corporation
    Inventors: Huiqing Pang, Peter Levermore, Emory Krall, Kamala Rajan, Ruiqing (Ray) Ma, Paul E. Burrows
  • Patent number: 8921873
    Abstract: The present invention provides a light-emitting device which includes a plurality of LED chips mounted on a chip mount surface of a substrate provided with a wiring pattern. In the light-emitting device, the wiring pattern is provided so as to meet the following conditions (a), (b), and (c). (a) The wiring pattern divides the chip mount surface into at least three divided areas in a radial fashion from a center of the chip mount surface, and includes radial elements and circumferential elements so as to surround divided areas. (b) Of two radial elements and one circumferential element which surround each divided area as viewed from the individual divided area, one or two elements form part of a positive electrode pattern, and the remainder forms part of a negative electrode pattern. (c) There is only one radial element between adjoining ones of the divided areas.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: December 30, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Shigeo Takeda, Tomohiro Miwa, Shota Shimonishi, Hiroyuki Tajima
  • Patent number: 8921871
    Abstract: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: December 30, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jin-Goo Kang, Mu-Hyun Kim, Jae-Bok Kim, Dong-Kyu Lee, Ji-Young Kim
  • Patent number: 8912565
    Abstract: A light emitting device is provided, including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes. The first semiconductor layer has a step-down region such that one of the plurality of electrodes is placed on the first semiconductor layer. The light emitting device includes a substrate including a first portion having a flat top surface, a second portion having a flat bottom surface and disposed under the first portion, and a side portion disposed between the first portion and the second portion. An area of the flat top surface of the first portion is larger than an area of the flat bottom surface of the second portion.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: December 16, 2014
    Assignee: LG Innotek, Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 8895989
    Abstract: A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer on the gate insulating film; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; and a power supply line in a same layer as the gate line and adjacent to the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the second electrode and the power supply line are electrically connected via a second conductive portion.
    Type: Grant
    Filed: November 27, 2012
    Date of Patent: November 25, 2014
    Assignee: Panasonic Corporation
    Inventor: Arinobu Kanegae
  • Patent number: 8889449
    Abstract: A method for producing a group III nitride semiconductor light-emitting device, by which a non-light-emitting region is easily formed, is disclosed. Mg is activated to convert a p-type layer into p-type, and a p-electrode is then formed on the p-type layer. An Ag paste is applied to a region on the p-electrode and overlapping an n-electrode formed in a subsequent step. Heat treatment is conducted to solidify the Ag paste, thereby forming an Ag paste solidified body. By this, a region overlapping the Ag paste solidified body in a planar view, of the p-type layer converts into a region having high resistance, and a high resistance region is formed. As a result, a region overlapping the high resistance region in a planar view, of a light-emitting layer becomes a non-light-emitting region.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: November 18, 2014
    Assignee: Toyoda Gosei Co., Ltd
    Inventors: Masato Aoki, Koichi Goshonoo, Satoshi Wada
  • Patent number: 8889450
    Abstract: The disclosed light emitting diode includes a substrate provided, at a surface thereof, with protrusions, a buffer layer formed over the entirety of the surface of the substrate, a first semiconductor layer formed over the buffer layer, an active layer formed on a portion of the first semiconductor layer, a second semiconductor layer formed over the active layer, a first electrode pad formed on another portion of the first semiconductor layer, except for the portion where the active layer is formed, and a second electrode pad formed on the second semiconductor layer. Each protrusion has a side surface inclined from the surface of the substrate at a first angle, and another side surface inclined from the surface of the substrate at a second angle different from the first angle.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: November 18, 2014
    Assignee: LG Display Co., Ltd.
    Inventor: Su-Hyoung Son
  • Patent number: 8884327
    Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip.
    Type: Grant
    Filed: September 21, 2010
    Date of Patent: November 11, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshiaki Sugizaki, Hideki Shibata, Akihiro Kojima, Masayuki Ishikawa, Hideo Tamura, Tetsuro Komatsu
  • Patent number: 8872212
    Abstract: A light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first electrode disposed on the first conductive semiconductor layer, a conductive layer disposed on the second conductive semiconductor layer, a second electrode disposed on the conductive layer, a channel layer directly contacts with the light emitting structure and disposed at an adjacent region of the second electrode, a support substrate disposed on the channel layer, and wherein the conductive layer is separated into at least two unit conductive layers.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: October 28, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hwan Hee Jeong, Kwang Ki Choi, June O Song, Sang Youl Lee
  • Patent number: 8872206
    Abstract: An organic light emitting display device includes a thin film transistor (TFT), a first insulating layer covering the TFT, a first electrode formed on the first insulating layer and electrically connected to the TFT, a second insulating layer that is formed on the first insulating layer and covers the first electrode and has an opening to expose a portion of the first electrode, an organic layer formed on a portion of the second insulating layer and the first electrode, a second electrode formed on the second insulating layer and the organic layer and composed of a first region and a second region, a capping layer formed on a first region of the second electrode and having first edges, and a third electrode formed on a second region of the second electrode and having second edges whose side surfaces contact side surfaces of the first edges of the capping layer.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: October 28, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jin-Koo Chung, Jun-Ho Choi, Seong-Min Kim
  • Patent number: 8872215
    Abstract: A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: October 28, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song
  • Patent number: 8866180
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.
    Type: Grant
    Filed: February 22, 2011
    Date of Patent: October 21, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Kyoon Kim, Myeong Soo Kim, Woo Sik Lim, Min Gyu Na, Sung Ho Choo
  • Patent number: 8866171
    Abstract: To provide a light-emitting element or a light-emitting device in which power is not consumed wastefully even if a short-circuit failure occurs. The present invention focuses on heat generated due to a short-circuit failure which occurs in a light-emitting element. A fusible alloy which is melted at temperature T2 by heat generated due to the short-circuit failure when the short-circuit failure occurs is used for at least one of a pair of electrodes in a light-emitting element, and a layer containing an organic composition which is melted at temperature T1 is formed on a surface of the electrode opposite to a surface facing the other electrode. The present inventors have reached a structure in which the temperature T2 is lower than temperature T3 at which the light-emitting element is damaged and the temperature T1 is lower than the temperature T2, and this structure can achieve the objects.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: October 21, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuo Nakamura, Satoshi Seo, Masaaki Hiroki
  • Patent number: 8860067
    Abstract: A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: October 14, 2014
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Yusuke Yokobayashi, Satoshi Tanaka, Tatsuma Saito
  • Patent number: 8860065
    Abstract: An embodiment of the invention discloses an optoelectronic semiconductor device. The optoelectronic semiconductor comprises a unit having a plurality of electrical connectors with top surfaces; an insulating material surrounding each of the plurality of electrical connectors, wherein each of the top surfaces are exposed through the insulating material; a semiconductor system, having a side surface directly covered by the insulation material, electrically connected to the plurality of electrical connectors and being narrower in width than both of the unit and the insulating material; an electrode formed on the semiconductor system at a position not corresponding to the plurality of electrical connectors; and a layer provided on the semiconductor system at a side opposite to the electrode and configured to laterally exceed outside more than one outermost boundary of the plurality of electrical connectors.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: October 14, 2014
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Wei-Chih Peng, Shiau-Huei San, Min-Hsun Hsieh
  • Patent number: 8847267
    Abstract: The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: September 30, 2014
    Assignee: Korea Photonics Technology Institute
    Inventors: Sang Mook Kim, Jong Hyeob Baek, Gang Ho Kim, Jung-In Kang, Hong Seo Yom, Young Moon Yu
  • Patent number: 8835966
    Abstract: A semiconductor light-emitting element (1) is provided which includes a semiconductor layer (10), an n-type electrode (18) which is provided on an exposed surface (12a) of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer (10), a transparent conductive film which is provided on the semiconductor layer (10) and a p-type electrode (17) which is provided on the transparent conductive film; a light-reflecting layer (39) is provided between the semiconductor layer (10) and the transparent conductive film, wherein at least part of the light-reflecting layer overlaps with the p-type electrode (17) in the planar view; the p-type electrode (17) comprises a pad portion (P) and a linear portion (L) which linearly extends from the pad portion (P) and has an annular structure in the planar view; the n-type electrode (18) exists in an inner area which is surrounded by the linear portion (L) and exists on a straight line (L1) which goes through a center (17a)
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: September 16, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hironao Shinohara, Remi Ohba
  • Patent number: 8835937
    Abstract: Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.
    Type: Grant
    Filed: February 18, 2005
    Date of Patent: September 16, 2014
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Ralph Wirth, Herbert Brunner, Stefan Illek, Dieter Eissler
  • Patent number: 8831062
    Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.
    Type: Grant
    Filed: April 6, 2011
    Date of Patent: September 9, 2014
    Assignee: II-VI Laser Enterprise GmbH
    Inventors: Hans-Ulrich Pfeiffer, Andrew Cannon Carter, Jörg Troger, Norbert Lichtenstein, Michael Schwarz, Abram Jakubowicz, Boris Sverdlov
  • Patent number: 8829541
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a crystalline substrate having a plurality of side surfaces, a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, and a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer. An amorphous region is defined in a side surface of the substrate, and the amorphous regions of two sides adjacent to each other have different depths from a top surface of the substrate.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: September 9, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: MyeongSoo Kim, SungKyoon Kim, Woo Sik Lim, Sung Ho Choo, Hee Young Beom, Min Gyu Na
  • Patent number: 8829527
    Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: September 9, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Murakami, Motomu Kurata, Hiroyuki Hata, Mitsuhiro Ichijo, Takashi Ohtsuki, Aya Anzai, Masayuki Sakakura
  • Patent number: 8823009
    Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: September 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Murakami, Motomu Kurata, Hiroyuki Hata, Mitsuhiro Ichijo, Takashi Ohtsuki, Aya Anzai, Masayuki Sakakura
  • Patent number: 8822998
    Abstract: An organic light emitting display device includes a substrate, a plurality of sub-pixels on the substrate, each sub-pixel including a first region configured to emit light and a second region configured to transmit external light, a plurality of thin film transistors disposed in the first region of the each sub-pixel, a plurality of first electrodes disposed in the first region of each sub-pixel and electrically connected to the thin film transistors, a first insulating layer on at least a portion of the first region of each sub-pixel to cover a portion of the first electrode, an organic emission layer on the first electrode, a second insulating layer on at least a portion of the second region of each sub-pixel, the second insulating layer including a plurality of openings therein, and a second electrode covering the organic emission layer, the first insulating layer, and the second insulating layer.
    Type: Grant
    Filed: March 8, 2011
    Date of Patent: September 2, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Seong-Min Kim, Jun-Ho Choi, Jin-Koo Chung
  • Patent number: 8823039
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: September 2, 2014
    Assignee: Epistar Corporation
    Inventors: Chien-Fu Shen, Cheng-Ta Kuo, Wei-Shou Chen, Tsung-Hsien Liu, Yi-Wen Ku, Min-Hsun Hsieh
  • Patent number: 8816372
    Abstract: An LED package includes a substrate, an electrode structure, an LED die, a packaging portion, and a covering portion. The electrode structure is formed on the substrate. The LED die is mounted on the substrate, and electrically connected to the electrode structure. The packaging portion covers the LED die. The covering portion surrounds a periphery of the LED package and seals a joint between the substrate, the electrode structure and the packaging portion. The covering portion is made of silicone-titanate resin with reactive monomers, wherein the reactive monomers comprises more than 60% of heptane, 7.0% to 13.0% of allyltrimethoxysilane, 5.0% to 10.0% of tetrabutyl titanate, and less than 0.1% of tetramethoxysilane.
    Type: Grant
    Filed: December 25, 2011
    Date of Patent: August 26, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Chia-Chiang Yang, Wen-Liang Tseng
  • Patent number: 8816343
    Abstract: A display panel includes an insulation substrate having a display area and a peripheral area, wires disposed on the insulation substrate in the display area, first and second testing lines disposed on the insulation substrate and aligned substantially parallel to each other, and a diode unit disposed between the wires and one of the first testing line and the second testing line. The wires extend from the display area into the peripheral area and through diodes included in the diode unit, and the wires are electrically connected to the one of the first testing line and the second testing line.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: August 26, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Bon-Yong Koo, Kyung-Wook Kim
  • Patent number: RE45217
    Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode. A method of fabricating a semiconductor light emitting device, and which includes forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: October 28, 2014
    Assignee: LG Electronics Inc.
    Inventors: Jun-Seok Ha, Jun-Ho Jang, Jae-Wan Choi, Jung-Hoon Seo