Abstract: A process for producing electrical contact connections for a component integrated in a substrate material is provided, the substrate material having a first surface region, and at least one terminal contact being arranged at least partially in the first surface region for each component, which is distinguished in particular by application of a covering to the first surface region and production of at least one contact passage which, in the substrate material, runs transversely with respect to the first surface region, in which process, in order to form at least one contact location in a second surface region which is to be provided, at least one electrical contact connection from the contact location to at least one of the terminal contacts is produced via the respective contact passages.

Abstract: The present invention relates to a thin film transistor. The thin film transistor includes a semiconductor having first, second, third, fourth, and fifth electrode regions arranged in a direction and spaced apart from each other and first, second, third, and fourth offset regions disposed between the first, second, third, fourth, and fifth electrode regions, respectively. An input electrode is connected to the third electrode region, an output electrode is connected to the first and fifth electrode regions, an insulating layer is disposed on the semiconductor, and a control electrode is disposed on the insulating layer and the second and fourth electrode regions.

Abstract: Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer.

Abstract: A radiation-emitting semiconductor chip having an absorbent brightness setting layer between a connection region and a current injection region and/or, as seen from the connection region, outside the current injection region on a front-side radiation coupling-out area of the semiconductor layer sequence. The brightness setting layer absorbs in a targeted manner part of the radiation generated in the semiconductor layer sequence. In another embodiment, a partly insulating brightness setting layer is arranged between the connection region and the active layer.

Abstract: A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.

Abstract: In a light-emitting device, a mount member mounting a semiconductor light-emitting element is mounted on a circuit board. A multilayer board is used for the mount member. A first conductive pattern formed on the surface layer of the multilayer board and a semiconductor light-emitting element are electrically connected. On the multilayer board, a second conductive pattern formed on an intermediate layer positioned closer to the circuit board than the first conductive pattern is electrically connected to the conductor part of the circuit board with a conductive wire such as a gold wire. Power is fed from the conductor part to the semiconductor light-emitting element via the conductive wire and the conductive patterns.

Abstract: The present disclosure relates to a semiconductor light emitting device which generates light by recombination of electrons and holes, and which includes: a first finger electrode for supplying one of the electrons and holes, a second finger electrode supplying the other of the electrons and holes, and spaced apart from the first finger electrode at a first interval; and a third finger electrode electrically connected to the first finger electrode, and spaced apart from the second finger electrode at a second interval which is smaller than the first interval.

Abstract: A semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on the first semiconductor layer, a second electrode including a first metal film provided on the second semiconductor layer and containing at least one of silver and a silver alloy, and a second metal film provided on the first metal film and made of a metal substantially not containing silver, and a dielectric film spaced from the first metal film on the second semiconductor layer. The second metal film covers the first metal film, at least part of the dielectric film, and a surface of the second semiconductor layer exposed between the first metal film and the dielectric film.

Abstract: A light emitting apparatus includes a semiconductor layer having an electrode with two traces physically separated from one another. The light emitting apparatus further includes a wire bond electrically connecting the two traces.

Abstract: An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. Contact structures (also referred to as electrical contact structures or electrodes) are features on a device that are electrically connected to a power source. The power source can provide current to the device via the contact structures. The contact structures can be designed to improve current distribution in electronic devices. For example, the contact resistance of the contacts may be modified to improve current distribution (e.g., by controlling the shape and/or structure and/or composition of the contacts). The contact structures may include an intervening layer (e.g., a non-ohmic layer) positioned between a surface of the device and a conductive portion extending from a conductive pad. The intervening layer and/or conductive portions may be designed to have certain shapes (e.g.

Abstract: Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a plurality of third semiconductor structures spaced apart on the second conductive semiconductor layer.

Abstract: An LED comprises a multilayered light-generating semiconductor region grown on one of a pair of opposite major surfaces of a semiconducting silicon substrate, a bonding pad overlying the light-generating semiconductor region and received in part in a cavity formed centrally therein, and a substrate electrode on the other major surface of the substrate. For protecting the LED from voltage spikes or like transients, an overvoltage protector such as a Schottky barrier diode is interposed between the bonding pad and the substrate. Further, for a uniform current distribution throughout the light-generating semiconductor region, a current-spreading film of electrically conducting, optically transparent material overlies the light-generating semiconductor region and itself covered by a transparent overlay of electrically insulating material. The bonding pad is electrically coupled to the current-spreading film via a plurality of connector strips extending radially from the pad over the transparent overlay.

Abstract: AN LED chip package body provides an LED chip with a pad-installed surface, a plurality of pads disposed on the pad-installed surface and a rear surface formed opposite the pad-installed surface. The LED chip package body further has a light-reflecting coating disposed on the pad-installed surface of the LED chip and a plurality of pad-exposed holes for exposure of the corresponding pads of the LED chip. The LED chip package body further comprises a light-transparent element disposed on the rear surface of the LED chip and a plurality of conductive projecting blocks. Each of the conductive projecting blocks is disposed on the corresponding pad of the LED chip.

Abstract: Light emitting diodes (LEDs) with various electrode structures which preferably provide increased performance. In some embodiments the LEDs are GaN-based and in some embodiments the LEDs are ZnO-based, with a sapphire substrate or a ZnO substrate. In some embodiments the LEDs are hybrid GaN-based ZnO based LEDs.

Abstract: An exemplary semiconductor device is provided. The semiconductor device includes a semiconductor stacked layer and a conductive structure. The conductive structure is located on the semiconductor stacked layer. The conductive structure includes a bottom portion and a top portion on opposite sides thereof. The bottom portion is in contact with the semiconductor stacked layer. A ratio of a top width of the top portion to a bottom width of the bottom portion is less than 0.7. The conductive structure can be a conductive dot structure or a conductive line structure.

Abstract: Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (11), a gallium nitride cladding layer (13) has a threading dislocation density of 1×107 cm?2 or less. An active region (17) has a quantum well structure (17a) consisted of a plurality of well layers (19) and a plurality of barrier layers (21), and the quantum well structure (17a) is provided so as to emit light having a peak wavelength within the wavelength range of 420 nm to 490 nm inclusive. The well layers (19) each include an un-doped InXGa1-XN (0<X<0.14, X: strained composition) region. The barrier layers (21) include an un-doped InYGa1-YN (0?Y?0.05, Y: strained composition, Y<X) region. Herein, indium composition X is indicated as strained composition, not as relaxation composition, in the embodiments of the present invention.

Abstract: A method for manufacturing a substrate of a liquid crystal display device is disclosed. The method includes forming a conductive line structure with low resistance to improve the difficulty of the resistance matching. The method can effectively reduce the resistance of the conductive line of the LCD panel to increase the transmission rate of the driving signal. Hence, the increasing yield of products can reduce the cost of manufacturing, and can meet the requirement of the large-size and high-definition thin film transistor liquid crystal display device.

Abstract: This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.

Abstract: A light-emitting device is provided that is excellent in light emission efficiency and stability. The light-emitting device has a first part of a first dielectric constant, a second part of a second dielectric constant and a third part of a third dielectric constant, and has a triple junction where they are in contact with one another. Moreover, a first and a second electrode are provided for applying a voltage for controlling an electric field at the triple junction and in the vicinity thereof. Further, at least one of the first, the second and the third parts is a constituted by light-emitting material, and the triple junction forms a closed line.

Abstract: A first semiconductor light emitting device includes: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a first portion on the first major surface of the transparent substrate and configured to emit light in the first wavelength band. The roughened region is provided in a second portion different from the first portion on the first major surface. A second semiconductor light emitting device includes: a transparent substrate; a light emitting layer; a first electrode; and at least one groove. The groove is provided on the second major surface of the transparent substrate and extends from a first side face to a second side face opposing the first side face of the transparent substrate.

Abstract: A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.

Abstract: A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.

Abstract: A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adhering the composite substrate to the epitaxial structure. The composite substrate comprises a patterned silicon layer penetrated through by a plurality of openssilicon, and a metal layer covering the patterned silicon layer, wherein a portion of the metal layer is filled into the opens and contacts the bonding layer.

Abstract: Light-emitting devices, and related components, processes, systems and methods are disclosed.

Abstract: An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

Abstract: Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in

Abstract: A reflection type light-emitting diode device of a kind capable of emitting rays of light to the outside after having been reflected by a reflecting surface includes a recessed casing (22) having a cavity defining the reflecting surface (15) and also having a pair of bearing grooves (17a and 17b) defined in a peripheral wall thereof, a light-emitting element (11), and first and second lead members each made up of a small width lead segment (12a or 12b) having a relatively small width and a large width lead segment (18a or 18b) having a relatively large width, with the light-emitting element (11) mounted on the small width lead segment (12a) of the first lead members. The first and second lead members are fitted to the recessed casing (22) with the small width lead segments (12a and 12b) thereof received immovably within respective bearing grooves (17a and 17b) in the recessed casing.

Abstract: Exemplary embodiments provide a flat panel display and method for forming the same including a substrate having a pixel driving circuit region and an emission region, a thin film transistor in the pixel driving circuit region, and a pixel electrode on the same layer as the source and drain electrodes. The thin film transistor may include a semiconductor layer, a gate electrode, and source and drain electrodes. The pixel electrode may contact one end of the semiconductor layer of the thin film transistor. The source and drain electrodes and the pixel electrode may be stacked structures having a first metal layer, a second metal layer, and a transparent conductive layer.

Abstract: A semiconductor light emitting device capable of precisely detecting a cleavage position is provided. A second light emitting device is layered on a first light emitting device. The second light emitting device has stripe-shaped opposed electrodes that are respectively arranged oppositely to respective p-side electrodes of the first light emitting device and electrically connected to the p-side electrodes of the first light emitting device, connection pads respectively and electrically connected to the respective opposed electrodes, a connection pad electrically connected to a p-side electrode, and marks arranged with one end in the plain face of cleavage face S3 or cleavage face S4 on an insulating layer formed on the side of a second substrate facing to a first substrate.

Abstract: Disclosed is an electronic device utilizing interferometric modulation and a package of the device. The packaged device includes a substrate, an interferometric modulation display array formed on the substrate, and a back-plate. The back-plate is placed over the display array with a gap between the back-plate and the display array. The depth of the gap may vary across the back-plate. The back-plate can be curved or have a recess on its interior surface facing the display array. Thickness of the back-plate may vary. The device may include reinforcing structures which are integrated with the back-plate.

Abstract: An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.

Abstract: A semiconductor light emitting element includes a substrate with upper and lower surfaces, a first nitride semiconductor layer on the upper surface of the substrate, a second nitride semiconductor layer arranged farther from the substrate than the first nitride semiconductor layer is, an active layer between the first and second nitride semiconductor layers, and a metal electrode on the second nitride semiconductor layer. As viewed in the thickness direction of the substrate, in which the upper and the lower surfaces are spaced from each other, an active layer area provided with the active layer is smaller than a semiconductor layer area provided with the second nitride semiconductor layer. An electrode area provided with the metal electrode overlaps with at least part of a residual area which is equal to the semiconductor layer area except the active layer area.

Abstract: An object of the invention is to reduce the manufacturing cost of EL display devices and electronic devices incorporating the EL display devices. An EL material is formed by printing in an active matrix EL display device. Relief printing or screen printing may be used as the method of printing. Manufacturing steps of the EL layer is therefore simplified and reduction of manufacturing cost is devised.

Abstract: This invention provides a light-emitting element and the manufacture method thereof. The light-emitting element is suitable for flip-chip bonding and comprises an electrode having a plurality of micro-bumps for direct bonding to a submount. Bonding within a relatively short distance between the light-emitting device and the submount can be formed so as to improve the heat dissipation efficiency of the light-emitting device.

Abstract: In the present invention, a method for manufacturing a liquid crystal display is provided. The method includes steps of providing a substrate, forming a first metal layer on the substrate, etching the first metal layer to form a plurality of gate lines on the substrate, forming a common electrode on the substrate, forming a second metal layer on the substrate, etching the second metal layer to form a first electrode, a second electrode, a common line and a plurality of data lines on the substrate, and forming a pixel electrode overlapping the common electrode, wherein the gate lines intersect the data lines to form at least one enclosed area, the common electrode and the pixel electrode are positioned in the enclosed area, the first electrode is connected to the pixel electrode and the second electrode is connected to the data lines.

Abstract: AN LED chip package body provides an LED chip with a pad-installed surface, a plurality of pads disposed on the pad-installed surface and a rear surface formed opposite the pad-installed surface. The LED chip package body further has a light-reflecting coating disposed on the pad-installed surface of the LED chip and a plurality of pad-exposed holes for exposure of the corresponding pads of the LED chip. The LED chip package body further comprises a light-transparent element disposed on the rear surface of the LED chip and a plurality of conductive projecting blocks. Each of the conductive projecting blocks is disposed on the corresponding pad of the LED chip.

Abstract: A mounting structure and a mounting method which are capable of securely electrically connecting wiring on a board and a device to each other in the case where the device is mounted on the board, and are capable of forming a finer bump, and increasing the number of pins are provided. A device includes at least one projection having a structure in which a surface of at least a tip part of a projecting section made of an elastic body is coated with a conductive film.

Abstract: The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining a higher port and a lower port on an upper surface thereof, an active layer with quantum well structure formed on said higher port of said n-type cladding layer, a p-type cladding layer formed on said active layer, a p-GaP layer formed on said p-type cladding layer, a metal contact layer formed on said GaP layer, a p-type ohmic contact electrode formed on said metal contact layer, and an n-type ohmic contact electrode formed on said lower port of said n-type cladding layer. By providing a gallium phosphide window and a reflective mirror, brightness of the LED can be promoted.

Abstract: An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate electrode and extended in a first direction, a source electrode formed on the transparent substrate and connected to a source line and a drain electrode formed on the channel layer to cover the channel layer. The insulating layer has a contact hole to partially expose the drain electrode and the transparent substrate. The pixel electrode is connected to the drain electrode through the contact hole. When the above array substrate is employed in a liquid crystal display panel, the array substrate reduces pixel defect.

Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.

Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.

Abstract: A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a mesh-type dielectric layer formed on the p-type nitride semiconductor layer and having a mesh structure with a plurality of open regions in which the p-type nitride semiconductor layer is exposed; a highly reflective ohmic contact layer formed on the mesh-type dielectric layer and the open regions in which the p-type nitride semiconductor layer is exposed; and a p-bonding electrode and an n-electrode formed on the highly reflective ohmic contact layer and the n-type nitride semiconductor layer, respectively.

Abstract: (Object) In a light-emitting device, it is preferable that a surface of a film below a light-emitting element has flatness. Therefore, treatment such as planarization of a surface of a film is performed after forming the film. The present invention proposes a structure of a light-emitting device that can make the foregoing planarization easier. (Solving Means) The same layer as a wiring formed on a first film is used to manufacture a second film. Herewith, a portion of the first film below a light-emitting element can be prevented from being etched to form unevenness at a surface of the first film during the formation of the wiring. In addition, a surface of a third film is made higher by providing the second film to enable local planarization.

Abstract: A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying the light emitting layer. A conductive transparent layer, e.g., of indium tin oxide, and a reflective metal layer overlie the layer of second conductivity type and provide electrical contact with the layer of second conductivity type. A plurality of vias may be formed in the reflective metal and conductive transparent layer as well as the layer of second conductivity type, down to the doped substrate layer. A plurality of contacts are formed in the vias and are in electrical contact with the doped substrate layer. An insulating layer formed over the reflective metal layer insulates the plurality of contacts from the conductive transparent layer and reflective metal layer.

Abstract: A display device has an array 40 of pixels and row and column driver circuitry comprising row driver circuit portions R and column driver circuit portions C, each pixel being addressed by a row driver circuit portion R and a column driver circuit portion C which connect to respective row and column conductor lines. The array of pixels has a non-rectangular outer shape, and the device comprises at least three row driver circuit portions R and at least three column driver circuit portions C disposed alternately around the outer periphery of the array. This arrangement enables row and column drivers to be divided into portions which are arranged in such a way that addressing can be provided for complicated display shapes.

Abstract: A light emitting device and a method for fabricating the same are disclosed, whereby a thin mask film is changed to agglomerates by a simple thermal treatment process, and a plurality of nano openings, each opening spaced a distance apart, are formed in the agglomerates, a light emitting structure exposed to the nano openings is etched to form nano grooves and nano openings therein, enabling to enhance a light emitting area and to reduce the totally reflected light for an improvement of the light extraction efficiency.

Abstract: A light-emitting device including: a semiconductor light-emitting element using a substrate surface as a light-extracting surface; and a mount frame on which the semiconductor light-emitting element is mounted and which has a reflecting portion for reflecting light emitted from the substrate surface; wherein the mount frame has a swollen portion formed so that part of the substrate surface of the light-emitting element is supported by the swollen portion.

Abstract: A light emitting device includes a first patterned electrode 12 and a second patterned electrode 13 both of which are formed on a wiring board 11, an LED chip 19 mounted on the second patterned electrode 13, a metal wire 20 electrically connecting the LED chip 19 and the first patterned electrode 12 to each other, and a lens member 21 made of a transparent synthetic resin for packaging the LED chip 19 and the metal wire 20. The first patterned electrode 12 is circular and formed with a cutout 14 at the center thereof. The second patterned electrode 13 is arranged in the cutout 14. With this arrangement, the lens member 21 can be formed into a predetermined configuration, while the reflection of light by the patterned electrodes can be ensured.

Abstract: An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during diode operation, and the array configured for passing coolant fluid for transfer of heat to the fluid. LED packages adjustable relative to a mounting grid, are also provided.