Abstract: In some implementations, an optical interference filter includes a substrate; and a set of layers that are disposed on the substrate, wherein the set of layers includes: a first subset of layers; and a second subset of layers; wherein: each of the first subset of layers includes an aluminum nitride (AlN) material, a stress of each of the first subset of layers is between ?1000 and 800 megapascals, the first subset of layers has a first refractive index with a first value, each of the second subset of layers includes at least one other material, the second subset of layers has a second refractive index with a second value that is different than the first value, and the optical interference filter has an effective refractive index greater than or equal to 95% of a highest value of the first value and the second value.

Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.

Abstract: A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.

Abstract: A micro-LED includes a light emitting device that emits a light beam surface—normally and a plurality of semiconductor layers that modify the light beam. Each semiconductor layer includes a first lateral region and a second lateral region, where the first lateral region and the second lateral region are characterized by different respective refractive indices. The first lateral regions of the plurality of semiconductor layers are arranged in two or more different lateral areas of the semiconductor light source. The second lateral region in each semiconductor layer of the plurality of semiconductor layers includes a semiconductor material with a different respective composition. The plurality of semiconductor layers form a planar optical component that is used to, for example, collimate, converge, diverge, or deflect the light beam emitted by the light emitting device.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.

Abstract: An OLED display device which prevents a color change according to a viewing angle. The OLED display device may include a substrate defined by a first pixel, a second pixel, a third pixel and a fourth pixel; an anode electrode on the substrate; a first organic light-emitting layer for emitting a first color light; a second organic light-emitting layer for emitting a second color light; a cathode electrode formed of a semi-transparent metal material on the first or second organic light-emitting layer, wherein the first organic light-emitting layer is formed in the first pixel and the second pixel; the second organic light-emitting layer is formed in the second pixel, the third pixel and the fourth pixel; and the second pixel emits mixed light of the first color light and the second color light.

Abstract: Node controllers and power distribution networks in accordance with embodiments of the invention enable distributed power control on an unbalanced network. One embodiment includes a node controller including a distributed power control application; a plurality of node operating parameters describing the operating parameter of a node in an unbalanced network; wherein the processor is configured by the distributed power control application to: send node operating parameters to nodes in the set of at least one node; receive operating parameters from the nodes in the set of at least one node; calculate a plurality of updated node operating parameters using an iterative process to determine updated node operating parameters using the node operating parameters that describe the operating parameters of the node, and the operating parameters of the set of at least one node, where each iteration in the iterative process involves evaluation of a subproblem; and adjust node operating parameters.

Abstract: A semiconductor light-emitting element includes a laminated structure which has an active layer between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a first semiconductor layer which includes at least the first conductivity-type semiconductor layer of the laminated structure, an insulation film which is formed on the first semiconductor layer and has an opening, and a second semiconductor layer which is formed on the insulation film and includes at least the second conductivity-type semiconductor layer of the laminated structure. The second semiconductor layer includes a first region facing the opening of the insulation film and a second region not facing the opening, and the second region has a portion with a higher impurity concentration than the first region.

Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Abstract: Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.

Abstract: A quantum cascade detector includes a semiconductor substrate; an active layer having a cascade structure; a lower cladding layer provided between the active layer and the substrate and having a lower refractive index than the active layer; a lower metal layer provided between the lower cladding layer and the substrate; an upper cladding layer provided on an opposite side to the substrate with respect to the active layer and having a lower refractive index than the active layer; and an upper metal layer provided on an opposite side to the active layer with respect to the upper cladding layer. A first end face being in a waveguide direction in a waveguide structure with the active layer, lower cladding layer, and upper cladding layer is an entrance surface for light to be detected.

Abstract: A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of Inx (Ga1-yAly)1-xAs (0<X?0.2, 0<y<1), and (n+1) barrier layers formed of Ga1-zAlzAs (0<z<1) and are alternately stacked with the well layer. The light emitting layer in some embodiments can emit light having a peak wavelength in a range of from 700 nm or more to 870 nm or less.

Abstract: A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064.

Abstract: An exemplary light emitting diode includes a substrate and a first undoped gallium nitride (GaN) layer formed on the substrate. The first undoped GaN layer defines a groove in an upper surface thereof. A distributed Bragg reflector is formed in the groove of the first undoped GaN layer. The distributed Bragg reflector includes a plurality of second undoped GaN layers and a plurality of air gaps alternately stacked one on the other. An n-type GaN layer, an active layer and a p-type GaN layer are formed on the distributed Bragg reflector and the first undoped GaN layer. A p-type electrode and an n-type electrode are electrically connected with the p-type GaN layer and the n-type GaN layer, respectively. A method for manufacturing plural such light emitting diodes is also provided.

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract: A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.

Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.

Abstract: A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer. The reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer. A portion of the light transmitting layer is physically contacted with an outer side of the electrode layer and is physically contacted with the lower surface of the light emitting structure. The conductive supporting member has a thickness thicker than a thickness of the light transmitting layer.

Abstract: A light source or sensor including: a stack of dielectric or semiconductive layers includes an alternation in a vertical direction of layers of high refractive index and of low refractive index forming an interference mirror, and presenting a top layer of high refractive index; at least one first metal pellet deposited or transferred on the top layer of the stack of layers to form a structure supporting a first Tamm plasmon mode that is spatially localized in at least one lateral direction perpendicular to the vertical direction; and at least one light emitter or detector arranged inside the stack of layers under the metal pellet and at a depth corresponding to a local maximum of the electric field of the Tamm plasmon mode to emit or detect radiation at the resonant wavelength thereof.

Abstract: A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 ?m to 2.5 ?m.

Abstract: A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

Abstract: A light-emitting device includes a nitride-based semiconductor reflector. The light-emitting device includes a nitride-based reflector and a light-emitting unit that is disposed on the nitride-based reflector. The nitride-based reflector includes undoped nitride semiconductor layers and heavily-doped nitride semiconductor layers that are alternately stacked. The heavily doped nitride semiconductor layers are etched at their edges to form air layers between adjacent undoped nitride semiconductor layers.

Abstract: A semiconductor device which produces at least 1 W/m2 two photon emission power per area, when operating at one or more temperatures greater than 20 K.

Abstract: A light emitting device package of the embodiment includes a body including cavities; first and second lead electrodes disposed in the cavity of the body; a light emitting device disposed in the cavities, electrically connected to at least one of the first and second lead electrodes and emitting a first main peak wavelength in the range of 410˜460 nm; and a first resin layer having first phosphor on the light emitting device, wherein the first phosphor of the first resin layer emits light of a second main peak wavelength in the range of 461 nm˜480 nm by exciting some light having the first main peak wavelength, and the first and second main peak wavelengths have the wavelength different from each other and contain the light having the same color.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.

Abstract: A method for manufacturing an LED package comprising steps of: providing a substrate and forming spaced electrode structures on the substrate; providing a mold on the top surface of the substrate wherein the mold defines spaced annular grooves which cooperate with the top surface of the substrate to define cavities; filling the cavities with metal material; removing the mold and hardening the metal material to form reflection cups wherein each reflection cup surrounds a corresponding electrode structure and defines a recess; polishing surfaces of the reflection cups and the electrode structures; arranging LED chips in the recesses with each LED chip electrically connected to the electrode structure; injecting an encapsulation layer in the recesses to seal the LED chips; and cutting the substrate to obtain individual LED packages.

Abstract: An organic light emitting display apparatus is manufactured using a simplified manufacturing process and prevents or reduces the formation of dark spots. The organic light emitting display apparatus includes: red, green, and blue sub-pixel regions, each including a first electrode on a substrate; a distributed Bragg reflector (DBR) layer between the substrate and the first electrode; a hole injection layer on the DBR layer and covering the first electrode; a hole transport layer on the hole injection layer; an auxiliary layer between the hole injection layer and the hole transport layer in the green sub-pixel region; a green light-emission layer on the hole transport layer in the blue and green sub-pixel regions; a blue light-emission layer on the green light-emission layer in the blue sub-pixel region; and a red light-emission layer on the hole transport layer in the red sub-pixel region.

Abstract: Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer.

Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

Abstract: A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

Abstract: The present invention is directed to LED packages and LED displays utilizing the LED packages, wherein the LED chips within the packages are arranged in unique orientations to provide the desired package or display FFP. One LED package according to the present invention comprises a reflective cup and an LED chip mounted in the reflective cup. The reflective cup has a first axis and a second axis orthogonal to the first axis, wherein the LED chip is rotated within the reflective cup so that the LED chip is out of alignment with said first axis. Some of the LED packages can comprise a rectangular LED chip having a chip longitudinal axis and an oval shaped reflective cup having a cup longitudinal axis. The LED chip is mounted within the reflective cup with the chip longitudinal axis angled from the cup longitudinal axis.

Abstract: A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.

Abstract: A light emitting device includes several groups of stripe shaped organic light emitting diodes arranged side by side on an optically transparent carrier substrate. The organic light emitting diodes includes a first layer sequence forming a first microcavity. At least one of the organic light emitting diodes of each group includes a second layer sequence forming a second microcavity is adapted in thickness of at least one of its layers to increase light output of the corresponding organic light emitting diode. A scatter or diffuser is arranged is an emission direction of the organic light emitting diodes in front of the carrier substrate to mix the light of different colors of each group leaving the carrier substrate allowing the emission of white light with a high efficacy.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing method of the light emitting device having auto-cloning photonic crystal structures is presented here.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency.

Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

Abstract: A method and a device are provided for diffracting incident light from a lithographic scanner in an IC process flow. Embodiments include forming a diffraction grating in a first layer on a semiconductor substrate; and forming a plurality of lithographic alignment marks in a second layer, overlying the first layer, wherein the diffraction grating has a width and a length greater than or equal to a width and length, respectively, of the plurality of lithographic alignment marks.

Abstract: A method for etching an insulating film includes the steps of forming an insulating film; forming a first resin layer composed of a non-silicon-containing resin on the insulating film; forming a pattern including projections and recesses in the first resin layer; forming a second resin layer composed of a silicon-containing resin to cover the projections and the recesses of the pattern in the first resin layer; etching the second resin layer by reactive ion etching with etching gas containing CF4 gas and oxygen gas until the projections of the first resin layer are exposed, a Si component of the second resin layer being oxidized in etching the second resin layer; selectively etching the first resin layer until the insulating film is exposed using as a mask the second resin layer buried in the recesses of the first resin layer to form a resin layer mask; and etching the insulating film using the resin layer mask.

Abstract: Disclosed is a light emitting device including a conductive substrate; a reflective layer on the conductive substrate; an etching protective layer on a peripheral portion of a top surface of the conductive substrate; and a light emitting structure, which is formed on the reflective layer and the etching protective layer such that the etching protective layer is partially exposed and includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers, wherein the etching protective layer includes a first refractive layer having a first refractive index and a second refractive layer having a second refractive index greater than the first refractive index.

Abstract: A light emitting device is provided. The light emitting device includes a first electrode layer, a light emitting structure, and a second electrode layer. The light emitting structure is formed on the first electrode layer to emit blue series light having a main peak wavelength region of about 430 nm to about 470 nm, and includes a light extraction structure. The second electrode layer includes a first layer, which is formed of a metal material different from a wavelength of the blue series light in Plasmon frequencies, on the light extraction structure.

Abstract: The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light.

Abstract: A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper surface of the dielectric layer, the first resist pattern including a pattern defining an outer perimeter of a mesa structure and a pattern protecting a region corresponding to one of the relatively high reflection rate part and the relatively low reflection rate part included in an emitting region; etching the dielectric layer by using the first resist pattern as an etching mask; and forming a second resist pattern protecting a region corresponding to an entire emitting region. These steps are performed before the mesa structure is formed.

Abstract: Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.

Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.

Abstract: A sensor assembly for electric field sensing is provided. The sensor assembly may include an array of Micro-Electro-Mechanical System (MEMS)-based resonant tunneling devices. A resonant tunneling device may be configured to generate a resonant tunneling signal in response to the electric field. The resonant tunneling device may include at least one electron state definer responsive to changes in at least one respective controllable characteristic of the electron state definer. The changes in the controllable characteristic are configured to affect the tunneling signal. An excitation device may be coupled to the resonant tunneling device to effect at least one of the changes in the controllable characteristic affecting the tunneling signal. A controller may be coupled to the resonant tunneling device and the excitation device to control the changes of the controllable characteristic in accordance with an automated control strategy configured to reduce an effect of noise on a measurement of the electric field.

Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.

Abstract: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.

Abstract: An optical device which can operate as a single photon emitter 1, comprising a three dimensional optical cavity 7 which spatially confines a photon to the order of the photon wavelength in all three dimensions. The cavity 7 is configured to define preferred emission direction for photons entering the cavity. A photon can be supplied to the cavity using a quantum dot 5. Strong coupling can occur between the cavity 7 and the quantum dot 5 which causes the formation of two hybridised modes. Switching on an off the coupling by irradiating the device with radiation having an energy equal to that of one of the hybridised modes allows the device to act as an optical switch.

Abstract: The present invention discloses a manufacturing method of vertical cavity surface emitting laser. The method includes following steps: providing a substrate; forming an epitaxial layer stack including an aluminum-rich layer; forming an ion-doping mask including a ring-shaped opening; doping ions in the epitaxial layer stack through the ring-shaped opening and forming a ring-shaped ion-doped region over the aluminum-rich layer; forming an etching mask on the ion-doping mask for covering the ring-shaped opening of the ion-doping mask; etching the epitaxial layer stack through the etching mask and ion-doping mask for forming an island platform; oxidizing the aluminum-rich layer for forming a ring-shaped oxidized region. In addition, the present invention also discloses a vertical cavity surface emitting laser manufactured by the above mentioned method.