Abstract: A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by an edge of the first type conductive layer.

Abstract: According to one embodiment, a display device includes a first substrate on which a light emitting element is mounted and a second substrate that faces the first substrate. The second substrate includes a reflector plate at a position above the light emitting element and facing a light emission surface of the light emitting element.

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

Abstract: Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion.

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer.

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer that extends from the second type conductive layer.

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs. the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs.

Abstract: An optical waveguide is an optical waveguide including a semiconductor quantum well structure, the optical waveguide including a first region in which the semiconductor quantum well structure is not disordered and a second region in which the semiconductor quantum well structure is disordered. The first region has a first bandgap wavelength, the second region has a second bandgap wavelength, and a region in which the semiconductor quantum well structure is disordered in such a manner that a bandgap wavelength continuously decreases from the first bandgap wavelength to the second bandgap wavelength is provided between the first region and the second region.

Abstract: Provided are a light emitting element and a display device comprising same. The light emitting element comprises: a first conductivity type semiconductor doped with a dopant having a first polarity, a second conductivity type semiconductor doped with a dopant having a second polarity opposite to the first polarity; an active layer between the first conductivity type semiconductor and the second conductivity type semiconductor; and an insulation film which surrounds at least a side surface of the active layer, wherein the insulation film includes an insulation coating film and at least one light conversion particle on at least a portion of the insulation coating film.

Abstract: The invention relates to a polarized-light-emitting SMD (surface-mounted device) LED (light-emitting diode) lamp bead and a method of batch manufacturing the same; the LED lamp bead comprises an SMD LED lamp bead bracket and N LED light-emitting die(dice) on its inner bottom surface, wherein a polarizing film is horizontally disposed above the LED light-emitting die, and first light-transmitting glue is filled between the inner bottom surface of the bracket and the lower surface of the polarizing film.

Abstract: A p-type semiconductor layer includes a plurality of unit semiconductor layers, and each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface. The nitride semiconductor constituting the unit semiconductor layer includes nitrogen and two or more elements, and each of the plurality of unit semiconductor layers has a composition changing in a stacking direction such that, for example, a lattice constant in a c-axis direction increases in a c-axis positive direction.

Abstract: A light-emitting diode includes an epitaxial layered structure and a conductive mirror structure which includes a first electrically conductive layer and a second electrically conductive layer disposed on the epitaxial layered structure in such order. The first and second electrically conductive layers respectively have a first reflectance R1 and a second reflectance R2 to light emitted from the epitaxial layered structure, and R1<R2.

Abstract: A radiation-emitting component is specified with—a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: Provided is a light emitting device including a buffer layer, a body provided on the buffer layer, the body including a first semiconductor layer, an active layer, and a second semiconductor layer, a reflective layer configured to reflect light incident from the active layer, and a scattering pattern provided between the first semiconductor layer and the buffer layer, the scattering pattern being configured to scatter the light incident from the active layer and light incident from the reflective layer.

Abstract: In an embodiment an optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a radiation exit surface and side surfaces running transversely with respect to the radiation exit surface, the optoelectronic semiconductor chip configured to emit primary radiation through the radiation exit surface, a conversion element arranged on the radiation exit surface, the conversion element configured to convert at least part of the primary radiation into secondary radiation and including a stack of at least two conversion layers and a reflective element laterally surrounding the optoelectronic semiconductor chip, wherein a lateral extent of the conversion layers decreases from a layer which is closest to the radiation exit surface to a layer which is most distant from the radiation exit surface, wherein the conversion element includes a part laterally extending beyond the radiation exit surface and being concavely curved, wherein the conversion element is partly arranged on the reflectiv

Abstract: The present application discloses a display panel and a display apparatus. The display panel includes: a first display area and a second display area, a transmittance of the first display area is greater than a transmittance of the second display area; and a plurality of first sub-pixels located in the first display area and each of the plurality of the first sub-pixels includes a first electrode, a first light-emitting structure located on the first electrode, and a second electrode located on the first light-emitting structure, in which a ratio of a total area of first electrodes of the plurality of the first sub-pixels located in the first display area to an area of the first display area is in a range from 8% to 23%.

Abstract: A light source device comprises a diffuser plate and a light source module disposed behind the diffuser plate. The light source module includes a substrate, a plurality of light emitting diodes mounted on the substrate, and a plurality of reflective layers each provided on a front surface of the plurality of light emitting diodes. When a distance between the centers of each of the plurality of light emitting diodes is referred to as a pitch, and a distance between the diffuser plate and the substrate is referred to as an optical distance, a ratio of the pitch to the optical distance satisfies the following expression: 2.5?pitch/optical distance?4.5.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

Abstract: A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.

Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence having an active layer, a doped current spreading layer and an output coupling layer, which are arranged one above the other in this order. The active layer generates primary radiation during intended operation. The current spreading layer includes a larger lateral electrical conductivity than the output coupling layer. The output coupling layer includes output coupling structures for coupling out radiation on an exit side facing away from the active layer. The output coupling layer includes a lower absorption coefficient for primary radiation than the current spreading layer.

Abstract: A micro-light emitting diode includes a semiconductor mesa structure that includes at least a portion of an n-type semiconductor layer, an active region configured to emit visible light, and a p-type semiconductor layer. The micro-LED device also includes an insulator layer that includes an undoped semiconductor passivation layer grown on sidewalls of the semiconductor mesa structure, and a dielectric passivation layer characterized by a refractive index lower than a refractive index of the undoped semiconductor passivation layer. The micro-LED device further includes a reflective metal layer deposited on the dielectric passivation layer, and a micro-lens configured to collimate the visible light emitted by the active region, where a ratio between a width of the micro-lens and a width of the active region may be greater than about 1.5.

Abstract: According to one embodiment, a selector device includes a first electrode, a second electrode, and a selector layer disposed between the first electrode and the second electrode. At least one of the first electrode or the second electrode includes a stacked film. The stacked film includes a first layer including a first material with a first Debye temperature, and a second layer in contact with the first layer and including a second material with a second Debye temperature lower than the first Debye temperature. A ratio of the first Debye temperature to the second Debye temperature is equal to or greater than 5.

Abstract: A micro LED display device includes a circuit substrate, an epitaxial structure layer, a metal conductive layer, a light conversion layer and a light-shielding structure. The epitaxial structure layer includes a first surface, a second surface, and a plurality of micro LED units separated from each other. The micro LED units are electrically connected to the circuit substrate. The metal conductive layer is disposed on the second surface and directly contacts the epitaxial structure layer, and has a plurality of light conversion region each corresponds to one of the micro LED units. The light conversion layer is disposed in a part of the light conversion regions. The light-shielding structure does not cover the light conversion regions. In the direction perpendicular to a bonding surface of the circuit substrate, the thickness of the metal conductive layer is greater than that of the epitaxial structure layer.

Abstract: A micro light-emitting device includes an epitaxial structure. The epitaxial structure has a bottom surface and includes a plurality of grooves, and the grooves are located on the bottom surface. Each of the grooves includes a plurality of sub-grooves, and the sub-grooves define an inner wall of each of the grooves. A ratio of a size of each of the grooves to a size of each of the sub-grooves is greater than 1 and less than or equal to 4000.

Abstract: An LED structure includes an epi layer grown on a substrate and a plurality of dielectric nanoantennas positioned within the epi layer. The dielectric antennas can be periodically arranged to reduce reabsorption of light and redirect oblique incident light to improve overall light coupling efficiency. Each of the dielectric nanoantennas can have a top, a bottom, a height less than 1000 nm and greater than 200 nm and a diameter less than 2000 nm and greater than 300 nm.

Abstract: A method is provided for fabricating an encapsulated emissive element. Beginning with a growth substrate, a plurality of emissive elements is formed. The growth substrate top surface is conformally coated with an encapsulation material. The encapsulation material may be photoresist, a polymer, a light reflective material, or a light absorbing material. The encapsulant is patterned to form fluidic assembly keys having a profile differing from the emissive element profiles. In one aspect, prior to separating the emissive elements from the handling substrate, a fluidic assembly keel or post is formed on each emissive element bottom surface. In one variation, the emissive elements have a horizontal profile. The fluidic assembly key has horizontal profile differing from the emissive element horizontal profile useful in selectively depositing different types of emissive elements during fluidic assembly.

Abstract: A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.

Abstract: A nanorod type micro-light emitting diode (LED) includes a nanorod stack structure including a multi-quantum well layer and emitting light from a side surface, and a functional material layer covering the side surface of the nanorod stack structure and increasing a total internal reflection angle of the nanorod stack structure. The functional material layer has a refractive index between a refractive index of the nanorod stack structure and a refractive index of air, and includes a plurality of material layers having a refractive index distribution in which a refractive index decreases as a distance from the side surface increases.

Abstract: A light-emitting substrate includes a base; a first material layer and a second material layer that are disposed on the base, and an etch stop layer between the first material layer and the second material layer. The first material layer is closer to the base than the second material layer. The second material layer includes a plurality of patterns, and each pattern and the first material layer have an overlapping region therebetween. The etch stop layer includes at least portions in respective overlapping regions. A portion of the etch stop layer located in each overlapping region is in contact with the first material layer and the second material layer. Energy level(s) of the portion of the etch stop layer located in each overlapping region are matched with energy levels of the first material layer and the second material layer at corresponding positions.

Abstract: A method for producing a semiconductor component may include applying a semiconductor chip over a first main surface of an insulating substrate, thinning a second main surface of the insulating substrate where the second main surface has a roughness of more than 300 nm after thinning, applying a smoothing metal layer over the second main surface of the insulating substrate, and smoothing the smoothing metal layer. A semiconductor component may include a semiconductor chip, an insulating substrate where the semiconductor chip is arranged over a first main surface of the insulating substrate and a second main surface of the insulating substrate has a roughness Ra of more than 300 nm, and a smoothing metal layer over the second main surface.

Abstract: A light-emitting device includes: a light-emitting element having an upper surface, a lower surface opposite to the upper surface, and lateral surfaces between the upper surface and the lower surface; a plurality of electrodes electrically connected to the light-emitting element and disposed on the lower surface of the light-emitting element; and a resin member covering the upper surface, the lower surface, and the lateral surfaces of the light-emitting element, the resin member having an upper surface, a lower surface opposite to the upper surface, and lateral surfaces between the upper surface and the lower surface. A portion of each of the electrodes is exposed at the lower surface of the resin member. A plurality of grooves are defined in the lower surface of the resin member, each of the grooves extending from a position apart from the electrode to an outer edge of the lower surface of the resin member.

Abstract: An optoelectronic semiconductor device may include a semiconductor body having a first main surface, a first dielectric layer over the first main surface, and a second dielectric layer on a side of the first dielectric layer facing away from the first main surface. The second dielectric layer is patterned to form an ordered photonic structure. The semiconductor body is suitable for emitting or receiving electromagnetic radiation through the first main surface. The first main surface is roughened, and the first dielectric layer is suitable for leveling a roughening of the first main surface.

Abstract: A display device including a backlight unit that includes a barrier layer disposed between a light-emitting chip and an electrode pad to reduce the contact area between a solder and the electrode pad due to the barrier layer, so that a portion of the electrode pad overlapping with the barrier layer is left behind without being diffused into the solder, and rework can be performed on a process of mounting the light-emitting chip.

Abstract: An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.

Abstract: A phosphor substrate having at least one light emitting element mounted on one surface, and includes an insulating substrate, an electrode layer disposed on one surface of the insulating substrate and bonded to the light emitting element, and a phosphor layer which is disposed on one surface of the insulating substrate and includes a phosphor in which a light emission peak wavelength, in a case where light emitted by the light emitting element is used as excitation light, is in a visible light region, in which a surface of the electrode layer facing an outer side in a thickness direction of the insulating substrate is a flat surface, and at least a part of the phosphor layer is disposed around a bonded portion of the electrode layer with the light emitting element.

Abstract: A light-emitting device according to one embodiment of the present disclosure includes: a reflective structure having a first surface and a second surface and having, on the first surface, an opening whose side surface is provided with a first reflective film; a semiconductor light-emitting element including a first conductivity-type layer, an active layer, and a second conductivity-type layer that are stacked, the opening of the reflective structure and the active layer being disposed to be opposed to each other; and a support member having a light-transmitting property and having a first surface and a second surface, the semiconductor light-emitting element being disposed on the first surface side, the reflective structure being disposed on the second surface side, the second surface being at least partially in contact with the first surface of the reflective structure.

Abstract: The present disclosure relates to a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate and a second nitride semiconductor layer on the first nitride semiconductor layer. The second nitride semiconductor layer has a first area and a second area, and the second nitride semiconductor layer has single crystals. The semiconductor device includes an electrode in contact with the first area. A first concentration of Aluminum (Al) of the first area is less than a second concentration of Al of the second area, and the single crystals in the first area take over a crystal structure of the first nitride semiconductor layer.

Abstract: The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.

Abstract: The present disclosure pertains to a transparent optical portion comprising a plurality of protrusion for providing a metalens function on a surface of an optical device, wherein a direction of growth of the plurality of protrusion is based on a crystal structure of a first substrate, and wherein the protrusions differ in size.

Abstract: A display device may include a driving transistor disposed in a display area, a test transistor disposed in a peripheral area adjacent to the display area, and a resistance line disposed in the peripheral area, electrically connected to the test transistor and including a metal oxide.

Abstract: A light emitting diode includes a semiconductor layer sequence stack, a reflective polarizing layer and a diffuse reflection structure. The semiconductor layer sequence stack includes first and second semiconductor layers, and a light emitting layer disposed therebetween. The reflective polarizing layer is disposed on the semiconductor layer sequence stack. The diffuse reflection structure is disposed on the light emitting layer opposite to the reflective polarizing layer. A light emitting device including the light emitting diode, and a projector including the light emitting device are also provided.

Abstract: Provided is a nitride semiconductor element that does not cause element breakdown even when driven at high current density. A nitride semiconductor element includes an active layer, an electron block layer formed above the active layer, an AlGaN layer formed on the electron block layer, and a cover layer covering an upper surface of the AlGaN layer and formed of AlGaN or GaN having a lower Al composition ratio than in the AlGaN layer, in which the AlGaN layer includes protrusions provided on a surface opposite to the active layer, and the cover layer covers the protrusions. The AlGaN layer is preferably formed of AlGaN having an Al composition ratio decreasing in a direction away from the active layer, and the protrusions preferably have a frustum shape.

Abstract: The present disclosure relates to the field of organic light emission, and discloses a display panel and a method for producing same, and a display device. The display panel includes: a substrate; a pixel defining layer disposed on the substrate; and an electrode layer located between the substrate and the pixel defining layer; wherein the pixel defining layer is internally provided with a through hole disposed corresponding to the electrode layer, and the through hole penetrates through the pixel defining layer and falls on the electrode layer; the electrode layer comprises a first transparent conductive layer and a light-shielding conductive layer that are arranged in a stack, and along a stacking direction of the electrode layer, an area of an orthographic projection of the first transparent conductive layer on the substrate is larger than an area of an orthographic projection of the light-shielding conductive layer on the substrate.

Abstract: Some embodiments include an integrated assembly having an access device between a storage element and a conductive structure. The access device has channel material which includes semiconductor material. The channel material has a first end and an opposing second end, and has a side extending from the first end to the second end. The first end is adjacent the conductive structure, and the second end is adjacent the storage element. Conductive gate material is adjacent the side of the channel material. A first domed metal-containing cap is over the conductive structure and under the channel material and/or a second domed metal-containing cap is over the channel material and under the storage element. Some embodiments include methods of forming integrated assemblies.

Abstract: A subpixel structure includes a substrate and a light emitting diode chip. The light emitting diode chip is disposed on the substrate. The light emitting diode chip has a chip area and a light emitting area, and the light emitting area is less than or equal to one tenth of the chip area.

Abstract: A light-emitting diode includes an epitaxial layered structure, a reflective layered unit, and a light-transmissive structure. The epitaxial layered structure has opposite upper and lower surfaces and a side surface interconnecting the upper and lower surfaces. The reflective layered unit is disposed on the lower surface of the epitaxial layered structure. The light-transmissive structure covers the upper surface of the epitaxial layered structure and a portion of the side surface of the epitaxial layered structure, and is configured to allow light emitted from the epitaxial layered structure to exit therefrom at a light-exit angle of not smaller than 125°.

Abstract: An optoelectronic semiconductor device may include a first semiconductor layer and a second semiconductor layer, the first and second semiconductor layers being stacked one above the other. The device may include a first contact structure and a contact layer. The device may include a separating layer arranged over a side of the contact layer, and a current spreading layer arranged over a side of the separating layer facing away from the contact layer. The first contact structure may be connected to the contact layer via the current spreading layer and the separating layer. A layer stack may include the contact layer, the separating layer, and the current spreading layer has an anisotropic conductivity. The separating layer is present as a continuous layer in a region between the contact layer and the current spreading layer.

Abstract: A light emitting diode chip and a light emitting diode display apparatus comprising the same, are disclosed in which a screen defect caused by a defect of the light emitting diode chip is minimized. The light emitting diode chip comprises a semiconductor substrate; first and second light emitting diodes provided on the semiconductor substrate in parallel with each other while having first and second pads; a first electrode commonly connected to the first pad of each of the first and second light emitting diodes; and a second electrode commonly connected to the second pad of each of the first and second light emitting diodes, wherein the first and second light emitting diodes are electrically connected to each other in parallel.