Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first

Abstract: A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.

Abstract: The present invention discloses a display device and a manufacturing method thereof, including the following steps: forming a thin-film transistor array substrate, the thin-film transistor array substrate including a first surface and a second surface that are disposed opposite to each other; forming a protective layer on the first surface; forming a metal layer on the second surface by a first patterning; forming a metal member by performing a second patterning on the metal layer; forming a patterned insulating layer on the second surface; forming an electrode layer on the metal member; forming a planarization layer on the electrode layer and the insulating layer; and removing the protective layer.

Abstract: An array substrate is disclosed and includes: a base substrate (1); an excitation light source (2) on a side of the base substrate (1); and a sub pixel on a side of the excitation light source (2) facing away from the base substrate (1). The sub pixel at least includes a first-kind sub pixel (3). The first-kind sub pixel (3) includes a first quantum dot conversion layer (31), a first recycling component layer (32) and a first color film layer (33) sequentially located on the side of the excitation light source (2) facing away from the base substrate (1), and the first recycling component layer (32) is configured to limit at least part of light with a wavelength smaller than a wavelength of emergent light of the first-kind sub pixel (3) into the first recycling component layer (32) and the first quantum dot conversion layer (31).

Abstract: A lighting device may include a substrate, light sources, a resin layer disposed on the substrate and the light sources, and a phosphor layer disposed on the resin layer. A surface of the resin layer has a flat upper surface and a plurality of side surfaces on an outer side of the flat upper surface. At least one of the plurality of side surfaces of the resin layer has a curved surface. The phosphor layer has a first region disposed on the flat upper surface of the resin layer and a second region disposed on the plurality of side surfaces of the resin layer. Light generated from the plurality of light sources is emitted through the flat upper surface and the curved surface of the resin layer.

Abstract: An example ceramic panel has a first surface and a second surface. The ceramic panel has a bond finger well on the first surface of the ceramic panel a scribe line well on the second surface of the ceramic panel. The ceramic panel also has a scribe line along the scribe line well.

Abstract: An organic light-emitting display device includes: a substrate; a pixel electrode on the substrate; an auxiliary electrode spaced apart from the pixel electrode; a first insulating film between the pixel electrode and the auxiliary electrode and covering an end of the pixel electrode and an end of the auxiliary electrode; an intermediate layer on the pixel electrode and including an emission layer; an opposite electrode covering the intermediate layer and contacting the auxiliary electrode; and a passivation layer covering the opposite electrode.

Abstract: A device may include a wavelength converting layer on an epitaxial layer. The wavelength converting layer may include a first surface having a width that is equal to a width of the epitaxial layer, a second surface having a width that is less than the width of the first surface, and angled sidewalls. A conformal non-emission layer may be formed on the angled sidewalls and sidewalls of the epitaxial layer, such that the second surface of the wavelength converting layer is exposed.

Abstract: The forming method of a flip-chip light emitting diode structure includes the following steps. A first substrate including a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer is provided. A first current blocking layer is formed on the second semiconductor layer, in which the first current blocking layer has a plurality of interspaces. A reflective layer covering the interspaces is formed, in which the reflective layer has a plurality of recesses, and each of the recesses is corresponding to each of the interspaces. A second current blocking layer filling into the recesses is formed.

Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.

Abstract: A light extraction apparatus for an organic light-emitting diode (OLED) includes an OLED emitter (100), a plurality of tapered reflectors (210), and a spacer layer (202). Each tapered reflector includes a first surface (212), a second surface (214) opposite to the first surface and comprising a surface area larger than a surface area of the first surface, and at least one side surface (216) extending between the first surface and the second surface. The spacer layer (202) includes a first surface coupled to the OLED emitter and a second surface coupled to the first surface of each of the plurality of tapered reflectors. Light emitted from the OLED passes through the spacer layer and into the plurality of tapered reflectors. The at least one side surface of each of the plurality of tapered reflectors includes a slope to redirect light into an escape cone and out of the second surface of the corresponding tapered reflector.

Abstract: A light emitting device includes a first light emitting part including a first n-type semiconductor layer, and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first transparent electrode vertically stacked one over another and exposing a portion of a first surface of the first n-type semiconductor layer, a second light emitting part spaced apart from the first mesa structure, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode and exposing a portion of a first surface of the second n-type semiconductor layer, and a first bonding layer on which the first and second light emitting parts are disposed and electrically coupling the first n-type semiconductor layer and the second n-type semiconductor layer to each other.

Abstract: A replacement lighting apparatus for automobiles is slim and includes an industry-leading footprint to fit into modern headlamps' minimal housing space. The lighting apparatus employs chip scale package light emitting diodes (CSP LEDs), flexible metal heat sinks, an improved collar having a watertight seal formed with an elastomeric gasket and the use of at least one, if not multiple, set screws, a wire harness with a nylon braided sleeve, and a solid-state design for maximum performance, long life, and superior scientifically proven heat mitigation.

Abstract: A display apparatus including a circuit substrate, a plurality of light-emitting elements, an optical film, and an adhesive layer is provided. These light-emitting elements are electrically bonded to the circuit substrate. The optical film overlaps the light-emitting elements. The light-emitting elements are disposed between the optical film and the circuit substrate. The adhesive layer is disposed between the optical film and the circuit substrate, and connects the light-emitting elements and the optical film. A cavity is provided between the light-emitting elements, the circuit substrate, and the adhesive layer.

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm?3, preferably 1·1018 cm?3, from the mean concentration of this dopant in the peripheral region (104).

Abstract: A diffractive optical element and method for fabricating the diffractive optical element are provided. The diffractive optical element includes a substrate, a first diffractive structure layer and a second diffractive structure layer. The substrate has a first surface and a second surface opposite to the first surface. The first diffractive structure layer is disposed on the first surface of the substrate. The second diffractive structure layer is disposed on the second surface of the substrate. In the method for fabricating the diffractive optical element, at first, the substrate is provided. Then, a first glue material layer/first semiconductor layer is formed and patterned on the first surface of the substrate. Thereafter, a second glue material layer/second semiconductor layer is formed and patterned on the second surface of the substrate.

Abstract: A method of manufacturing a III-V based optoelectronic device on a silicon-on-insulator wafer. The silicon-on-insulator wafer comprises a silicon device layer, a substrate, and an insulator layer between the substrate and silicon device layer. The method includes the steps of: providing a device coupon, the device coupon being formed of a plurality of III-V based layers; providing the silicon-on-insulator wafer, the wafer including a cavity with a bonding region; transfer printing the device coupon into the cavity, and bonding a layer of the device coupon to the bonding region, such that a channel is left around one or more lateral sides of the device coupon; filling the channel with a bridge-waveguide material; and performing one or more etching steps on the device coupon, silicon-on-insulator wafer, and/or channel.

Abstract: The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).

Abstract: A laser includes a substrate, first and second claddings, a gain medium, and multiple supports. The first cladding is spaced apart from the substrate by an air gap. A thickness of the first cladding in a vertical direction is in a range from 0.05-0.15 micrometers. The gain medium is disposed on the first cladding opposite the air gap. The second cladding is disposed on the gain medium opposite the first cladding. A thickness of the second cladding in the vertical direction is in a range from 0.05-0.15 micrometers. The supports are coupled to each of the substrate, the first cladding, the gain medium, and the second cladding to retain the first cladding, the gain medium, and the second cladding spaced apart from the substrate.

Abstract: A light source includes an array of light emitters, with at least some light emitters having a central patterned surface and an unpatterned border; a light blocking metal layer positioned between each of the array of light emitters; and down-converter material positioned on each of the array of light emitters.

Abstract: A light emitting element includes a substrate and a semiconductor structure. The substrate has a hexagonal shape in a top view. The semiconductor structure is disposed on an upper surface of the substrate. The first lateral surface of the substrate includes a first region including a modified region, the first region having an elongated shape extending along a first direction, a second region including a modified region, the second region having an elongated shape, and the first region and the second region being aligned along the first direction, and a third region disposed between the first region and the second region, the third region having a surface state different from a surface state of the first region or a surface state of the second region.

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, whe

Abstract: A display device includes a display panel with a light emitting area from which a light exits and an input sensor disposed on the display panel. The input sensor includes a first conductive layer, a first insulating layer disposed on the first conductive layer and provided with a diffraction grating defined therein to correspond to the light emitting area, and a second conductive layer disposed on the first insulating layer and connected to the first conductive layer. The first insulating layer includes an organic layer covering the first conductive layer and an inorganic layer disposed on the organic layer. The organic layer and the inorganic layer include a plurality of holes defined therein to define the diffraction grating.

Abstract: A method for manufacturing a light-emitting module, includes placing a light-emitting element on a support member with an electrode formation surface of the light-emitting element facing upward; forming a pair of first conductive members respectively on the element electrodes; forming a first light-reflective resin layer on the support member and around the light-emitting element and the first conductive members; forming a pair of second conductive members on the first light-reflective resin layer and respectively on the first conductive members, the second conductive member being wider than the first conductive member; forming a second light-reflective resin layer on the first light-reflective resin layer and around the second conductive members; forming wiring electrodes over the second light-reflective resin layer from the second conductive members; and removing the support member.

Abstract: The present disclosure provides a substrate comprising a printing area, wherein the printing area comprises a flat surface and a plurality of separation structures projecting from the flat surface, wherein the plurality of separation structures divide the printing area into a plurality of micro-areas, and in each of the micro-areas, a circular region containing no separation structure has a maximum diameter between 5 ?m and 10 ?m. The present disclosure further provides a light emitting device comprising the substrate and a method for manufacturing the substrate.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.

Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor st

Abstract: A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.

Abstract: A wavelength conversion member includes: a phosphor; a metal joining layer provided on a bottom surface and a side surface of the phosphor; a metal heat-dissipating holding unit including a recess that covers the bottom surface and at least a portion of the side surface of the phosphor and that accommodates the phosphor so that the phosphor is embedded in the recess; and a metal porous joining material provided between the metal joining layer and the metal heat-dissipating holding unit.

Abstract: A semiconductor light-emitting device includes a junction or active layer between doped semiconductor layers coextensive over a contiguous device area, corresponding sets of electrical contacts connected to the semiconductor layers, and multiple nanostructured optical elements at a surface of one semiconductor layer opposite the other semiconductor layer. Composite electrical contacts of one set include a conductive layer, a transparent dielectric layer between the conductive and semiconductor layers, and vias through the dielectric layer connecting the conductive and semiconductor layers. The nanostructured elements redirect light, propagating laterally in optical modes supported by the semiconductor layers, to exit the device. The composite electrical contacts can be independent and define independently addressable pixel areas of the device. The nanostructured elements and thin semiconductor layers can yield high contrast between adjacent pixel areas without trenches between them.

Abstract: A light-emitting device includes: a base member; a base body formed on an upper surface of the base member, the base body including a wiring layer; a light-emitting element mounted on an upper surface of the base body, wherein the light-emitting element includes an element-substrate, and a semiconductor layer located on the element-substrate; a resin frame located on the upper surface of the base body; and a first resin located inside the resin frame to cover a part of side surfaces of the light-emitting element, a part of inner side surface of the resin frame, and the upper surface of the base body. The first resin includes: a reflective material layer that contains a reflective material, and a resin layer that is located on an upper surface of the reflective material layer and does not contain the reflective material.

Abstract: A light emitting device is provided that makes it possible to reduce absorption of light by an electrode.

Abstract: A light-emitting device including a substrate, an insulating layer, an inner circuit structure, a plurality of light-emitting elements, an insulating encapsulation layer, and a transparent conductive layer is provided. The insulating layer is disposed on the substrate. The inner circuit structure is disposed on the insulating layer. The light-emitting elements are correspondingly disposed on the inner circuit structure. The insulating encapsulation layer is disposed on the inner circuit structure. The insulating encapsulating layer covers a portion of the inner circuit structure and encapsulates the light-emitting elements. The transparent conductive layer is disposed on the insulating encapsulating layer. The transparent conductive layer electrically connects the light-emitting elements, and serially connects the light-emitting elements.

Abstract: A laser light is used to modify the surface of the gallium semiconductor layer of an LED. The parameters of the laser are selected so that the laser interacts with the gallium semiconductor layer in a desired manner to yield the desired surface properties. For example, if a particular surface roughness is desired, the power of the laser light is selected so that the laser light penetrates the gallium semiconductor layer to a depth matching the desired surface roughness. The same principles can also be applied in a process that creates features such as trenches, pits, lenses, and mirrors on the gallium semiconductor layer of an LED. The laser projector is operated to irradiate a region of the gallium semiconductor layer to create a region of metallic gallium. The desired surface roughness and the different features can advantageously improve the beam collimation, light extraction, and other properties of the LED.

Abstract: Discussed is a display apparatus including a substrate having a wiring electrode; and a semiconductor light-emitting device that emits light to an upper surface thereof, has a conductive electrode electrically connected to the wiring electrode on a lower surface thereof, and has at least a side surface of which is covered by a passivation layer, wherein the conductive electrode comprises: an insulating region further covered by the passivation layer, and a concave-convex region exposed by the passivation layer and electrically connected to the wiring electrode, a surface of the concave-convex portion being formed with concavity and convexity.

Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

Abstract: A micro LED display includes a display substrate, a first soldering layer, at least one second soldering layer, first micro LEDs and at least one second micro LED. The display substrate includes a substrate having a plurality of pixel areas, a first circuit layer and a second circuit layer, and the first circuit layer and the second circuit layer are arranged in each pixel area. The first soldering layer is disposed on the first circuit layer, and the second soldering layer is disposed on the second micro LED. An arranging area of the first soldering layer is greater than an arranging area of the second soldering layer. The first micro LEDs is bonding to the first circuit layer in each pixel area through the first soldering layer. The second micro LED is bonding to the second circuit layer of one of the pixel areas through the second soldering layer.

Abstract: A silicon carbide (carborundum) semiconductor device and a manufacturing method thereof. The manufacturing method of the silicon carbide semiconductor device comprises the following steps of: providing a semiconductor component structure on a silicon carbide substrate, the semiconductor component structure being formed on a front side of the silicon carbide substrate; and forming a multi-layer structure on a back side of the silicon carbide substrate, the multi-layer structure comprising a plurality of ohmic contact layers and a plurality of gettering material layers. By dispersing the gettering material into multiple layers, and by adjusting a thickness combination of the ohmic contact layer and the gettering material layer, even if the gettering material layer is relatively thin (thickness sufficient for balling), a content is still sufficient for gettering carbon and reducing carbon aggregation and accumulation.

Abstract: A display panel, a light-emitting device, and a driving method thereof are provided. The light-emitting device includes a substrate, and a first electrode, a first light-emitting unit, a connecting layer, a second light-emitting unit, and a second electrode stacked up sequentially on the substrate. Polarities of the first electrode and the second electrode are opposite and reverse periodically in order that the first light-emitting unit and the second light-emitting unit illuminate alternately.

Abstract: The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising Li(Alx1Ga1?x1)O2 wherein 0?x1?1; and a second epitaxial oxide layer comprising (Alx2Ga1?x2)2O3 wherein 0?x2?1.

Abstract: Provided is a display device including a base layer, a pixel circuit disposed on the base layer, a pixel electrode electrically connected to the pixel circuit, a middle layer disposed on the pixel electrode and including a polymer resin layer and a conductive layer, a plurality of light emitting diodes disposed on the conductive layer and electrically connected to the pixel electrode, and a common electrode configured to cover the plurality of light emitting diodes and electrically connected to the plurality of light emitting diodes. Each of the plurality of light emitting diodes includes a first electrode, a light generating layer, and a second electrode sequentially stacked in a thickness direction of the base layer.

Abstract: An ultraviolet light-emitting diode chip, including: a n-type semiconductor layer; an intermediate layer disposed on the n-type semiconductor layer, the intermediate layer including a plurality of first tapered pits; an active layer disposed on the intermediate layer; a p-type semiconductor layer disposed on the active layer; a n-type electrode disposed on the n-type semiconductor layer; a p-type electrode disposed on the p-type semiconductor layer; a reflecting layer; a bonding layer; and a substrate. The reflecting layer and the bonding layer are disposed between the p-type electrode and the substrate. The active layer includes a plurality of second tapered pits each in a shape of hexagonal pyramid and a plurality of first flat regions connecting every two adjacent second tapered pits. The projected area of the plurality of first flat regions is less than 30% of the projected area of the active layer.

Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material. The Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.

Abstract: The flip-chip light emitting diode structure includes a substrate, a first patterned current blocking layer, a second patterned current blocking layer, a first semiconductor layer, an active layer and a second semiconductor layer. The first patterned current blocking layer is disposed on the substrate. The second patterned current blocking layer is disposed on the first patterned current blocking layer, in which the first patterned current blocking layer and the second patterned current blocking layer are located on different planes, and patterns of the first patterned current blocking layer and patterns of the second current blocking layer are substantially complementary. The first semiconductor layer is disposed on the second patterned current blocking layer. The active layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the active layer, in which electrical properties of the second semiconductor layer and the first semiconductor layer are different.

Abstract: A semiconductor light-emitting element capable of reducing multipeaks to thereby achieve a single peak in an emission spectrum is provided. A semiconductor light-emitting element according to the present disclosure includes, in this order, a substrate, a reflective layer, a first conductivity type cladding layer made of InGaAsP containing at least In and P, a semiconductor light-emitting layer having an emission central wavelength of 1000 nm to 2200 nm, and a second conductivity type cladding layer made of InGaAsP containing at least In and P, wherein the second conductivity type cladding layer is configured to be on a light extraction side. The surface of a light extraction face of the second conductivity type cladding layer is a roughened surface which has a surface roughness Ra of 0.03 ?m or more and has a random irregularity pattern.

Abstract: A light emitting device includes a light emitting element having an emission peak wavelength in a range of 380 nm to 420 nm and a fluorescent member including at least one fluorescent material that is excited by light from the light emitting element for light emission, wherein a mixture of light from the light emitting element and light from the fluorescent material has a correlated color temperature in a range of 2000 K to 7500 K as measured according to JIS Z8725, and the light emitting device has a spectral distribution in which, when the integral value over a wavelength range of 380 nm to 780 nm is normalized to 100%, the proportion of an integral value over a wavelength range of 380 nm to 420 nm is 15% or more, and the ratio a as defined by the expression (1) is 0.9 or more and 1.6 or less.

Abstract: A pixel includes a first electrode and a second electrode spaced from each other in a first direction on a substrate; a plurality of light emitting elements between the first electrode and the second electrode; an intermediate pattern located between the first electrode and the second electrode in the first direction and located between the substrate and the plurality of light emitting elements in a thickness direction of the substrate; a first contact electrode electrically connecting one end portion of each of the light emitting elements and the first electrode; and a second contact electrode electrically connecting an other end portion of each of the light emitting elements and the second electrode.

Abstract: A method of manufacturing a light emitting device including forming first light emitting parts on a first substrate, the first light emitting part including a first n-type semiconductor layer and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first electrode and exposing a portion of the first n-type semiconductor layer, forming second light emitting parts on a second substrate, the second light emitting part including a second n-type semiconductor layer and a second mesa structure including a second active layer, a second p-type semiconductor layer, and a second electrode and exposing a portion of the second n-type semiconductor layer, attaching a first removable carrier onto the second light emitting parts and enclosing the second light emitting parts, removing the second substrate from the second light emitting parts, and bonding the second light emitting parts to the first light emitting parts.

Abstract: Problem: To provide a light source unit that can be housed in a narrow space, can be curved to match the shape of the space, and can emit linear light in a desired lighting pattern, and a vehicle lamp equipped with this light source unit. Solution: A light source unit 1 is comprised of a strip of translucent film 3 in which LEDs 2 are embedded and strips of lenses 4 that cover the translucent film 3 on the top and back surfaces thereof. The lenses 4 are provided with a light collecting portion 41 that collects the light from the LEDs 2 and a reflective portion 42 that changes the direction of the light incident from the light collecting portion 41 on the surface opposite the surface on which the light collecting portion 41 is provided. The LEDs 2 are arranged linearly along the longitudinal direction of the translucent film 3, and each can be independently controlled for lighting.

Abstract: According to one embodiment, a method for manufacturing a silicon carbide base body is disclosed. The method can include preparing a first base body including silicon carbide. The first base body includes a first base body surface tilted with respect to a (0001) plane of the first base body. A first line segment where the first base body surface and the (0001) plane of the first base body intersect is along a [11-20] direction of the first base body. The method can include forming a first layer at the first base body surface. The first layer includes silicon carbide. The method can include removing a portion of the first layer. The first-layer surface is tilted with respect to a (0001) plane of the first layer. A second line segment where the first-layer surface and the (0001) plane of the first layer intersect is along a [?1100] direction.