Integrated With Device (e.g., Back Surface Reflector, Lens) (epo) Patents (Class 257/E33.068)
  • Patent number: 9859461
    Abstract: A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. A light generating structure formed over the n-type semiconductor contact layer has a set of quantum wells and barriers configured to emit or absorb target radiation. An ultraviolet transparent semiconductor layer having a non-uniform thickness is formed over the light generating structure. A p-type contact semiconductor layer having a non-uniform thickness is formed over the ultraviolet transparent semiconductor layer.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: January 2, 2018
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky
  • Patent number: 9478709
    Abstract: A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: October 25, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol Yoo
  • Patent number: 9029887
    Abstract: Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: May 12, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Martin F. Schubert, Kevin Tetz
  • Patent number: 9024342
    Abstract: A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched between the first conductive type layer and the second conductive type layer, and a reflecting layer formed on the second conductive type layer for reflecting the light emitted from the light emitting layer. The light is extracted in a direction from the light emitting layer toward the first conductive type layer. The first conductive type layer includes a concavo-convex region on a surface thereof not opposite to the light emitting layer, for changing a path of light, and at least a part of the reflecting layer is formed extending to right above an edge of the concavo-convex region.
    Type: Grant
    Filed: October 5, 2011
    Date of Patent: May 5, 2015
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Masao Kamiya, Masashi Deguchi
  • Patent number: 9012941
    Abstract: Provided is a light emitting diode device. The light emitting diode device includes a light emitting diode chip having a first surface on which first and second electrodes are disposed, and a second surface opposing the first surface, a wavelength conversion portion including fluorescent substances and covering the first surface and side surfaces of the light emitting diode chip, wherein the side surfaces denote surfaces placed between the first and second surfaces, and first and second electricity connection portions each including a plating layer, respectively connected to the first and second electrodes, and exposed to the outside of the wavelength conversion portion. Accordingly, the light emitting diode device, capable of enhancing luminous efficiency and realizing uniform product characteristics in terms of the emission of white light, is provided. Further, a process for easily and efficiently manufacturing the above light emitting diode device is provided.
    Type: Grant
    Filed: April 9, 2013
    Date of Patent: April 21, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jung Kyu Park
  • Patent number: 9012929
    Abstract: A light source module includes a substrate, at least two light emitting diode (LED) chips and at least one dummy chip. The LED chips are disposed on the substrate. The dummy chip is disposed on the substrate and located between the LED chips. The LED chips, the dummy chip and the substrate are electrically connected to one another. The dummy chip is used to redirect a lateral light emitted from the LED chips.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: April 21, 2015
    Assignee: Genesis Photonics Inc.
    Inventors: Cheng-Yen Chen, Yun-Li Li, Yi-Hao Huang, Sheng-Yuan Sun
  • Patent number: 9000468
    Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: April 7, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Myung Cheol Yoo
  • Patent number: 8994054
    Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: March 31, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Muramoto, Shinya Nunoue, Toshiyuki Oka
  • Patent number: 8993993
    Abstract: Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.
    Type: Grant
    Filed: May 10, 2011
    Date of Patent: March 31, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyung Duk Ko, Jung Ja Yang, Yu Seung Kim, Youn Joon Sung, Soo Jin Jung, Dae Cheon Kim, Byung Kwun Lee
  • Patent number: 8987025
    Abstract: A manufacturing method for an LED (light emitting diode) includes following steps: providing a substrate; disposing a transitional layer on the substrate, the transitional layer comprising a planar area with a flat top surface and a patterned area with a rugged top surface; coating an aluminum layer on the transitional layer; using a nitriding process on the aluminum layer to form an AlN material on the transitional layer; disposing an epitaxial layer on the transitional layer and covering the AlN material, the epitaxial layer contacting the planar area and the patterned area of the transitional layer, a plurality of gaps being defined between the epitaxial layer and the slugs of the second part of the AlN material in the patterned area of the transitional layer.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: March 24, 2015
    Assignee: Zhongshan Innocloud Intellectual Property Services Co., Ltd.
    Inventors: Chia-Hung Huang, Shih-Cheng Huang, Po-Min Tu, Ya-Wen Lin, Shun-Kuei Yang
  • Patent number: 8987766
    Abstract: An LED chip includes a substrate and an epitaxy structure formed on the substrate. The epitaxy structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A plurality of grooves are defined through the first semiconductor layer, the light emitting layer and the second semiconductor layer. The light emitting layer is exposed from the grooves. A transparent insulative layer is filled in the grooves. An electrode is further formed on the transparent insulative layer.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: March 24, 2015
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Chih-Chen Lai
  • Patent number: 8987772
    Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: March 24, 2015
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang-Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
  • Patent number: 8975650
    Abstract: A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer. The reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer. A portion of the light transmitting layer is physically contacted with an outer side of the electrode layer and is physically contacted with the lower surface of the light emitting structure. The conductive supporting member has a thickness thicker than a thickness of the light transmitting layer.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: March 10, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 8969900
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: March 3, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Matthias Sabathil, Alexander Linkov, Christopher Kölper, Martin Straβburg, Norwin von Malm
  • Patent number: 8963179
    Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: February 24, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song, Ji Hyung Moon
  • Patent number: 8963181
    Abstract: A radiation-emitting component includes a semiconductor layer stack having an active region that emits electromagnetic radiation, and at least one surface of the semiconductor layer stack or of an optical element that transmits the electromagnetic radiation wherein the surface has a normal vector, wherein on the at least one surface of the semiconductor layer stack or of the optical element through which the electromagnetic radiation passes, an antireflection layer is arranged such that, for a predetermined wavelength, it has a minimum reflection at a viewing angle relative to the normal vector of the surface at which an increase in a zonal luminous flux of the electromagnetic radiation has approximately a maximum.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: February 24, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Stefan Grötsch, Jan Marfeld, Jörg E. Sorg, Moritz Engl, Steffen Köhler
  • Patent number: 8957443
    Abstract: An organic light-emitting display apparatus is provided. The organic light-emitting display apparatus includes: a pixel electrode for reflecting incident light and located on a substrate including a thin film transistor (TFT), and electrically connected to the TFT; an organic layer on the pixel electrode and including an emission layer; and an opposite electrode on the organic layer and including a resonant region for forming a resonant structure with the pixel electrode by reflecting light emitted from the emission layer, and a non-resonant region that is a region other than the resonant region.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: February 17, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Kyu-Hwan Hwang, Seok-Gyu Yoon, Eung-Do Kim, Dong-Chan Kim, Bo-Ray Jung, Won-Jong Kim, Young-Woo Song, Jong-Hyuk Lee, Sung-Chul Kim
  • Patent number: 8957442
    Abstract: A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.
    Type: Grant
    Filed: February 8, 2012
    Date of Patent: February 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Toshiki Sasaki, Nobuharu Ohsawa, Takahiro Ushikubo, Shunpei Yamazaki
  • Patent number: 8952405
    Abstract: A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: February 10, 2015
    Inventor: Mordehai Margalit
  • Patent number: 8951823
    Abstract: Disclosed herein is a method for manufacturing a solid-state imaging element, the method including forming lenses that are each provided corresponding to a light receiving part of a respective one of a plurality of pixels arranged in an imaging area over a semiconductor substrate and collect light onto the light receiving parts; forming a light blocking layer by performing film deposition on the lenses by using a material having light blocking capability; and forming a light blocker composed of the material having light blocking capability at a boundary part between the lenses adjacent to each other by etching the light blocking layer in such a manner that the material having light blocking capability is left at the boundary part between the lenses.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: February 10, 2015
    Assignee: Sony Corporation
    Inventor: Yoshiaki Masuda
  • Patent number: 8952404
    Abstract: A light-emitting device package having improved connection reliability of a bonding wire, heat dissipation properties, and light quality due to post-molding and a method of manufacturing the light-emitting device package. The light-emitting device package includes, for example, a wiring substrate having an opening; a light-emitting device that is disposed on the wiring substrate and covers the opening; a bonding wire electrically connecting a bottom surface of the wiring substrate to a bottom surface of the light-emitting device via the opening; a molding member that surrounds a side surface of the light-emitting device and not a top surface of the light-emitting device, which is an emission surface, is formed on a portion of a top surface of the wiring substrate, and is formed in the opening of the wiring substrate to cover the bonding wire; and a solder resist and a bump formed on the bottom surface of the wiring substrate.
    Type: Grant
    Filed: January 11, 2012
    Date of Patent: February 10, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Cheol-jun Yoo, Young-hee Song
  • Patent number: 8941141
    Abstract: A light-emitting device having a corner includes a light-emitting stacked layer having a first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer. A transparent conductive oxide layer is formed on the second conductivity type semiconductor layer. The upper surface of the transparent conductive oxide layer is textured. A first electrode is formed on the upper surface of the transparent conductive oxide layer. A second electrode is formed on the first conductivity type semiconductor layer. A planarization layer is formed on the transparent conductive oxide layer and the first conductivity type semiconductor layer, and a reflective layer is formed on the upper surface of the planarization layer. The projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode.
    Type: Grant
    Filed: July 5, 2013
    Date of Patent: January 27, 2015
    Assignee: Epistar Corporation
    Inventors: Wei Yu Chen, Min-Hsun Hsieh
  • Patent number: 8936957
    Abstract: The present disclosure discloses a method of manufacturing a light-emitting device comprising the steps of providing a light-emitting wafer having a semiconductor stacked structure and an alignment mark, sensing the alignment mark, and separating the light-emitting wafer into a plurality of light-emitting diodes and removing the alignment mark accordingly.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: January 20, 2015
    Assignee: Epistar Corporation
    Inventor: Tsung-Hsien Yang
  • Patent number: 8928017
    Abstract: Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: January 6, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Su-hee Chae, Young-soo Park, Bok-ki Min, Jun-youn Kim, Hyun-gi Hong
  • Patent number: 8928016
    Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a light extraction structure that extracts light from the light emitting structure. The light extraction structure includes at least a first light extraction zone and a second light extraction zone, where a period and/or size of first concave and/or convex structures of the first light extraction zone is different from a period and/or size of second concave and/or convex structures of the second light extraction zone.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: January 6, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sun Kyung Kim
  • Patent number: 8916893
    Abstract: A light-emitting device includes a circuit board to which external electric power is supplied, a light emitting diode that is electrically connected onto the circuit board and emits light based on electric power from the circuit board, a housing provided on the circuit board so as to surround the light emitting diode and so that the upper end portion of the housing is positioned above the upper end portion of the light emitting diode, and a fluorescent laminate provided on the housing. The fluorescent laminate includes a first fluorescent layer that emits fluorescent light and a second fluorescent layer that emits fluorescent light having a wavelength that is longer than that of the first fluorescent layer. The second fluorescent layer is disposed on the housing and the first fluorescent layer is laminated on the second fluorescent layer.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: December 23, 2014
    Assignee: Nitto Denko Corporation
    Inventors: Yasunari Ooyabu, Toshitaka Nakamura, Hironaka Fujii, Hisataka Ito
  • Patent number: 8916891
    Abstract: A light emitting device includes a first light extraction structure including a reflective layer and a pattern; an ohmic layer on the first light extraction structure; a second conductive type semiconductor layer on the ohmic layer; an active layer on the second conductive type semiconductor layer; and a first conductive type semiconductor layer on the active layer, wherein the pattern has a refractive index that is higher than that of air and lower than that of the second conductive type semiconductor layer.
    Type: Grant
    Filed: October 21, 2010
    Date of Patent: December 23, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sun Kyung Kim
  • Patent number: 8916400
    Abstract: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: December 23, 2014
    Assignee: Advanced Optoelectronics Technology, Inc.
    Inventors: Chia-Hung Huang, Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Ya-Wen Lin
  • Patent number: 8912559
    Abstract: A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: December 16, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Shingo Totani, Masashi Deguchi, Naoki Nakajo
  • Patent number: 8907366
    Abstract: Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a current spreading layer, on the epitaxial region. A barrier layer is provided on the current spreading layer and extending on a sidewall of the current spreading layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: December 9, 2014
    Assignee: Cree, Inc.
    Inventors: David B. Slater, Jr., Bradley E. Williams, Peter S. Andrews, John A. Edmond, Scott T. Allen
  • Patent number: 8901586
    Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hak Hwan Kim, Ho Sun Paek, Hyung Kun Kim, Sung Kyong Oh, Jong In Yang
  • Patent number: 8896006
    Abstract: A red-emitting luminescent material that belongs to the class of nitridosilicates and is doped with at least one activator D, in particular Eu, wherein the material is a modified D-doped alkaline earth nitridosilicate M2Si5N8, where M=one or more elements belonging to the group Sr, Ca, Ba, with the nitridosilicate having been stabilized by an oxidic or oxinitridic—in particular alkaline earth—phase.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: November 25, 2014
    Assignee: OSRAM Gesellschaft mit beschränkter Haftung
    Inventors: Daniel Becker, Tim Fiedler, Frank Jermann, Bianca Pohl
  • Patent number: 8889517
    Abstract: A broadband, omnidirectional, multi-layer, dielectric reflector for an LED in a white light emitting device provides both near 100% reflectivity across the visible spectrum of light, and electrical insulation between the substrate and the electrical circuitry used to power and control the LED. When a sealant material, having a higher index of refraction than air, is used to protect the LED and the accompanying electrical circuitry, an aluminum reflector layer or substrate is provided to make up for the loss of reflectivity at certain angles of incidence. The dielectric reflector includes two separate sections with two different thicknesses, a thinner section below the LED providing better heat conductivity, and a thicker section surrounding the LED providing better reflectivity.
    Type: Grant
    Filed: October 3, 2013
    Date of Patent: November 18, 2014
    Assignee: JDS Uniphase Corporation
    Inventors: Richard A. Bradley, Jr., Georg J. Ockenfuss
  • Patent number: 8883533
    Abstract: A method for manufacturing an LED package comprising steps of: providing a substrate and forming spaced electrode structures on the substrate; providing a mold on the top surface of the substrate wherein the mold defines spaced annular grooves which cooperate with the top surface of the substrate to define cavities; filling the cavities with metal material; removing the mold and hardening the metal material to form reflection cups wherein each reflection cup surrounds a corresponding electrode structure and defines a recess; polishing surfaces of the reflection cups and the electrode structures; arranging LED chips in the recesses with each LED chip electrically connected to the electrode structure; injecting an encapsulation layer in the recesses to seal the LED chips; and cutting the substrate to obtain individual LED packages.
    Type: Grant
    Filed: August 10, 2012
    Date of Patent: November 11, 2014
    Assignee: Advanced Optoelectronic Technology, Inc.
    Inventors: Hsin-Chiang Lin, Pin-Chuan Chen, Lung-Hsin Chen
  • Patent number: 8877529
    Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: November 4, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Berthold Hahn, Volker Härle, Reiner Windisch
  • Patent number: 8878212
    Abstract: A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.
    Type: Grant
    Filed: February 3, 2011
    Date of Patent: November 4, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Woo Sik Lim, Sung Kyoon Kim, Sung Ho Choo, Hee Young Beom
  • Patent number: 8866174
    Abstract: A light-emitting device having a light-emitting stacked layer with a first conductivity type semiconductor layer is provided. A light-emitting layer is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer is formed on the light-emitting layer. The upper surface of the second conductivity type semiconductor layer is a textured surface. A planarization layer is formed on a first part of the second conductivity type semiconductor layer. A transparent conductive oxide layer is formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer. An electrode is formed on the first portion of the transparent conductive oxide layer, and a reflective metal layer is formed between the transparent conductive oxide layer and the electrode.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: October 21, 2014
    Assignee: Epistar Corporation
    Inventors: Tzu-Chieh Hsu, Ching-San Tao, Chen Ou, Min-Hsun Hsieh, Chao Hsing Chen
  • Patent number: 8860072
    Abstract: A light emitting device includes a body having a first recess; a barrier section having a second recess and a third recess, protruding upward over a bottom surface of the first recess, and dividing the bottom surface of the first recess into a first region and a second region; a first light emitting diode disposed in the first region; a second light emitting diode disposed in the second region; a first lead electrode disposed in the first region; a second lead electrode disposed in the second region; a first wire electrically connecting the first lead electrode to the second light emitting diode through the second recess; and a second wire electrically connecting the second lead electrode to the first light emitting diode through the third recess.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: October 14, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Joong In An, Sung Min Kong
  • Patent number: 8853722
    Abstract: A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: October 7, 2014
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Chia-Fen Tsai
  • Patent number: 8847256
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first semiconductor layer comprising a plurality of vacant space parts, an active layer on the first semiconductor layer, and a second conductive type semiconductor layer on the active layer. Each of the plurality of air-lenses has a thickness less than that of the first semiconductor layer.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: September 30, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Hoon Han
  • Patent number: 8841685
    Abstract: A description is given of an optoelectronic semiconductor chip (1) comprising a semiconductor layer sequence (2), which has an active zone (4) for generating electromagnetic radiation, and comprising a structured current spreading layer (6), which contains a transparent conductive oxide and is arranged on a main area (12) of the semiconductor layer sequence (2), wherein the current spreading layer (6) covers at least 30% and at most 60% of the main area (12).
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: September 23, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Lutz Hoeppel, Matthias Sabathil
  • Patent number: 8835966
    Abstract: A semiconductor light-emitting element (1) is provided which includes a semiconductor layer (10), an n-type electrode (18) which is provided on an exposed surface (12a) of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer (10), a transparent conductive film which is provided on the semiconductor layer (10) and a p-type electrode (17) which is provided on the transparent conductive film; a light-reflecting layer (39) is provided between the semiconductor layer (10) and the transparent conductive film, wherein at least part of the light-reflecting layer overlaps with the p-type electrode (17) in the planar view; the p-type electrode (17) comprises a pad portion (P) and a linear portion (L) which linearly extends from the pad portion (P) and has an annular structure in the planar view; the n-type electrode (18) exists in an inner area which is surrounded by the linear portion (L) and exists on a straight line (L1) which goes through a center (17a)
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: September 16, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Hironao Shinohara, Remi Ohba
  • Patent number: 8828753
    Abstract: A method for producing a light emitting diode device includes the steps of preparing a board mounted with a light emitting diode; preparing a hemispherical lens molding die; preparing a light emitting diode encapsulating material which includes a light emitting diode encapsulating layer and a phosphor layer laminated thereon, and in which both layers are prepared from a resin before final curing; and disposing the light emitting diode encapsulating material between the board and the lens molding die so that the phosphor layer is opposed to the lens molding die to be compressively molded, so that the light emitting diode is directly encapsulated by the hemispherical light emitting diode encapsulating layer and the phosphor layer is disposed on the hemispherical surface thereof.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: September 9, 2014
    Assignee: Nitto Denko Corporation
    Inventors: Yuki Ebe, Yasunari Ooyabu
  • Patent number: 8829554
    Abstract: A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: September 9, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Patent number: 8816379
    Abstract: A reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: August 26, 2014
    Assignee: High Power Opto, Inc.
    Inventors: Fu-Bang Chen, Wei-Yu Yen, Li-Ping Chou, Wei-Chun Tseng, Chih-Sung Chang
  • Patent number: 8816373
    Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence for generating an electromagnetic radiation, and also a silver mirror. The silver mirror is arranged at the semiconductor layer sequence. Oxygen is admixed with the silver of the silver mirror. A proportion by weight of the oxygen in the silver mirror is preferably at least 10?5 and furthermore preferably at most 10%.
    Type: Grant
    Filed: October 1, 2012
    Date of Patent: August 26, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Kai Gehrke, Korbinian Perzlmaier, Richard Floeter, Christian Schmid
  • Patent number: 8809885
    Abstract: Disclosed is a light emitting device. The light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers; and a light extraction structure on the light emitting structure. The light extraction structure comprises a plurality of first layers and a plurality of second layers which are alternately disposed with each other to have a negative refraction index.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: August 19, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kwang Chil Lee, Sung Min Hwang
  • Patent number: 8809893
    Abstract: The present invention relates to a vertical/horizontal light-emitting diode for a semiconductor.
    Type: Grant
    Filed: November 16, 2009
    Date of Patent: August 19, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Pun Jae Choi, Sang Bum Lee, Jin Bock Lee, Yu Seung Kim, Sang Yeob Song
  • Patent number: 8809086
    Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: August 19, 2014
    Assignee: OSRAM GmbH
    Inventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Volker Härle
  • Patent number: 8809895
    Abstract: Provided are a light emitting device and a method of fabricating the same. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer being formed of a semiconductor material. Also, the light emitting device further includes a current spreading layer comprising a plurality of carbon nanotube bundles physically connected to each other on one of the first and second conductive type semiconductor layers.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: August 19, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song, Ji hyung Moon, Se Yeon Jung, Tae-Yeon Seong