Abstract: A light emitting device includes first and second semiconductor laser elements, a base, a surrounding part, a wavelength converting member, and first and second wiring parts. The first laser element, the converting member and the second laser element are arranged in order in a first direction. At least one of the first and second laser elements is disposed between the first and second wiring parts in a second direction perpendicular to the first direction. An outermost periphery of the converting member is between a first imaginary line and a second imaginary line in the top view. The first and second imaginary lines are both parallel to the second direction. The first imaginary line passes through an outermost periphery in the first direction of the second laser element and the second imaginary line passes through an outermost periphery in a direction opposite to the first direction of the first laser element.

Abstract: A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.

Abstract: A micro-light emitting diode includes a mesa structure that includes a first set of one or more semiconductor layers, an active layer configured to emit light, a second set of one or more semiconductor layers on the active layer, and a dielectric layer in sidewall regions of the mesa structure. A center region of the second set of one or more semiconductor layers is thicker than a sidewall region of the second set of one or more semiconductor layers, such that a distance from a surface of the sidewall region of the second set of one or more semiconductor layers to the active layer is less than a distance from a surface of the center region of the second set of one or more semiconductor layers to the active layer, thereby forming a surface potential-induced lateral potential barrier at a sidewall region of the active layer.

Abstract: A light emitting device is provided to include an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer disposed between the p-type semiconductor layer and the active layer. The p-type semiconductor layer includes a hole injection layer, a p-type contact layer, and a hole transport layer. The hole transport layer includes a plurality of undoped layers and at least one intermediate doped layer disposed between the undoped layers. At least one of the undoped layers includes a zone in which hole concentration decreases with increasing distance from the hole injection layer or the p-type contact layer, and the intermediate doped layer is disposed to be at least partially overlapped with a region of the hole transport layer, the region having the hole concentration of 62% to 87% of the hole concentration of the p-type contact layer.

Abstract: A light emitting device package includes: first and second electrodes, at least a portion of a lower surface thereof being exposed; a light emitting device disposed on an upper surface of at least one of the first and second electrodes; a reflection wall disposed on the upper surface of the first and second electrodes and surrounding the light emitting device to form a mounting part therein; and a fluorescent film disposed on the reflection wall to cover an upper portion of the mounting part. The mounting part is filled with air.

Abstract: An optical sensor element is mounted in a package which includes a glass substrate having a cavity, and a glass lid substrate bonded to the other substrate to close the cavity. The glass substrate with the cavity has metalized wiring patterns on front and rear surfaces thereof, and a through hole filled with metal to form a through-electrode interconnecting the wiring patterns on the front and rear surfaces. A metalized wiring pattern on the rear surface of the glass lid substrate is electrically connected to the wiring pattern on the front surface of the other substrate with an adhesive containing conductive particles. The glass lid substrate is made either of glass having a filter function or glass having a light shielding property with an opening therethrough filled with glass having a filter function.

Abstract: A light-emitting device includes a substrate (4), a light-emitting element (10) mounted on the substrate (4), a first resin (12) disposed to cover an upper portion of the light-emitting element (10), a second resin (14) disposed to cover a lower portion of the light-emitting element (10), a first phosphor (18) contained in the first resin (12), and a second phosphor (20) contained in the second resin (14). The first phosphor (18) converts light emitted directly from the light-emitting element (10) into a first phosphor-converted light having a wavelength longer than that of the light emitted directly from the light-emitting element (10) and emits the first phosphor-converted light, and the second phosphor (20) converts the light emitted directly from the light-emitting element (10) into a second phosphor-converted light having a wavelength longer than that of the first phosphor-converted light and emits the second phosphor-converted light.

Abstract: An LED chip includes a substrate and an epitaxy structure formed on the substrate. The epitaxy structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer. A plurality of grooves are defined through the first semiconductor layer, the light emitting layer and the second semiconductor layer. The light emitting layer is exposed from the grooves. A transparent insulative layer is filled in the grooves. An electrode is further formed on the transparent insulative layer.

Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.

Abstract: An organic light emitting diode (OLED) display includes a substrate, a pixel electrode on the substrate, an organic light emitting member on the pixel electrode, a common electrode on the organic light emitting member, a thin film encapsulation member covering the common electrode, a black matrix on the thin film encapsulation member, and an upper protection film on the black matrix. The black matrix has a color filter at a location corresponding to the organic light emitting member. A sum of a thickness of the color filter and a distance between the color filter and the organic light emitting member is smaller than a width of the organic light emitting member.

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract: Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.

Abstract: A light emitting diode (LED) package comprising a substrate with an LED chip mounted to the substrate and in electrical contact with it. An inner material covers the LED chip, and a lens covers the inner material with the lens material being harder than the inner material. An adhesive is arranged between the substrate and the lens to hold the lens to the substrate and to compensate for different coefficients of thermal expansion (CTE) between the lens and the remainder of the package. A method for forming an LED package comprises providing a substrate with a first meniscus ring on a surface of the substrate. An LED chip is mounted to the substrate, within the meniscus ring. An inner material is deposited over the LED chip, and a lens material in liquid form is deposited over the inner material. The lens material held in a hemispheric shape by the first meniscus feature and the lens material is cured making it harder than the inner material.

Abstract: A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.

Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

Abstract: A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub-regions having asymmetrical band structures.

Abstract: A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.

Abstract: A semiconductor light emitting device has a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer. An oxide layer is disposed around the first semiconductor layer and is provided between the substrate and active layer. The first semiconductor layer has an uneven pattern along the side edge.

Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.

Abstract: An optoelectronic component includes a carrier element. At least two elements are arranged in an adjacent fashion on a first side of the carrier element. Each element has at least one optically active region for generating the electromagnetic radiation. The optoelectronic component has an electrically insulating protective layer arranged at least in part on a surface of the at least two adjacent elements which lies opposite the first side. The protective layer, at least in a first region arranged between the at least two adjacent elements, at least predominantly prevents a transmission of the electromagnetic radiation generated by the optically active regions.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Abstract: A light emitting device package structure is described. The light emitting device package structure includes a substrate serving as a carrier supporting a light emitting device chip. The substrate and the light emitting device chip have a chip side and a substrate side separately. A first electrode layer is disposed on a first surface of the light emitting device chip and a second electrode layer is disposed on a second surface of the light emitting device chip, in which the first surface and the second surface are not coplanar. A first conductive trace is electrically connected to the first electrode layer and a second conductive trace is electrically connected to the second electrode layer. At least the first conductive trace or the second conductive trace is formed along the chip side and the substrate side simultaneously.

Abstract: A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24.

Abstract: A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising steps of: providing a growth substrate, wherein the growth substrate has a first surface and a second surface; forming a light-absorbable layer on the first surface of the growth substrate; forming an illuminant epitaxial structure on the light absorbable layer; providing a laser beam and irradiating the second surface of the growth substrate, wherein the laser beam wavelength is greater than 1000 nm; and removing the growth substrate.

Abstract: The present application describes a vertical light-emitting diode (VLED) and its manufacture method that use the combination of a reflective layer, a transparent conducting layer and transparent dielectric layer as structural layers for promoting uniform current distribution and increasing light extraction. In the VLED, a transparent conducting layer is formed on a first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then formed on a side of the transparent conducting layer opposite the side of the multi-layer structure. A first electrode structure is then formed on the transparent dielectric layer in electrical contact with the transparent conducting layer via a plurality of contact windows patterned through the transparent dielectric layer. The transparent conducting layer and the transparent dielectric layer are used as structural layers for improving light extraction.

Abstract: An organic light-emitting display device that is transparent and prevents distortion of an image transmitted therethrough by preventing light from scattering during image display. The organic light-emitting display device comprises a plurality of pixels, in which each pixel includes a light transmission area, a light emitting area, and a light absorption area. The light transmission area is configured to pass visible light incident thereto. The light absorption is configured to absorb visible light incident thereto.

Abstract: A nanocrystal light-emitting diode with improved structural stability is disclosed. Specifically, the nanocrystal light-emitting diode comprises an excitation source, a nanocrystal-containing light conversion layer and an air layer formed therebetween to be exposed to the outside.

Abstract: A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected.

Abstract: A package structure includes a substrate, a first die and at least one second die. The substrate includes a first pair of parallel edges and a second pair of parallel edges. The first die is mounted over the substrate. The first die includes a third pair of parallel edges and a fourth pair of parallel edges, wherein the third pair of parallel edges and the fourth pair of parallel edges are not parallel to the first pair of parallel edges and the second pair of parallel edges, respectively. The at least one second die is mounted over the first die.

Abstract: A substrate for mounting optical semiconductor elements is provided, including a base substrate having an insulating layer and a plurality of wiring circuits formed on the upper face of the insulating layer, and having at least one external connection terminal formation opening portion which penetrates the insulating layer and reaches the wiring circuits; and an optical reflection member, which is provided on the upper face of the base substrate, and which forms at least one depressed portion serving as an area for mounting an optical semiconductor element.

Abstract: A light emitting device structure, wherein the emitter layer structure comprises one or more device wells defined by thick field oxide regions, and a method of fabrication thereof are provided. Preferably, by defining device well regions after depositing the emitter layer structure, emitter layer structures with reduced topography may be provided, facilitating processing and improving layer to layer uniformity. The method is particularly applicable to multilayer emitter layer structures, e.g. comprising a layer stack of active layer/drift layer pairs. Preferably, active layers comprise a rare earth oxide, or rare earth doped dielectric such as silicon dioxide, silicon nitride, or silicon oxynitride, and respective drift layers comprise a suitable dielectric, preferably silicon dioxide, of an appropriate thickness to control excitation energy. Pixellated light emitting structures, or large area, high brightness emitter layer structures, e.g.

Abstract: Provided are a semiconductor package and a method of manufacturing the same. The semiconductor package includes a semiconductor chip, a transparent substrate, an adhesive pattern, and at least one dew-proofer. The semiconductor includes a pixel area. The transparent substrate is disposed on the semiconductor chip. The adhesive pattern is disposed between the semiconductor chip and the transparent substrate and provides a space on the pixel area. At least one dew-proofer is disposed between the semiconductor chip and the transparent substrate and spaced from the adhesive pattern.

Abstract: The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp.

Abstract: A semiconductor light emitting device is provided which allows emission light from a light source to efficiently outgo from the semiconductor light emitting device so that the light emission intensity of the semiconductor light emitting device is increased. A penetrating opening is formed in the substantially central part of a cap member to communicate the interior side to the exterior side the cap member. The penetrating opening has an inclined portion. The inclined portion is opposed to and spaced away from a semiconductor light emitting element and includes a light entering portion through which emission light from the semiconductor light emitting element passes. The opening width of the inclined portion is getting wider from the light entering portion in the light traveling direction so that the inclined portion is tapered. The emission light from the semiconductor light emitting element can effectively outgo from the semiconductor light emitting device.

Abstract: Methods for forming electrically conductive through-wafer interconnects in microelectronic devices and microelectronic devices are disclosed herein. In one embodiment, a microelectronic device can include a monolithic microelectronic substrate with an integrated circuit has a front side with integrated circuit interconnects thereon. A bond-pad is carried by the substrate and electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the substrate and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad, a dielectric liner deposited into the passage and in contact with the substrate, first and second conductive layers deposited onto at least a portion of the dielectric liner, and a conductive fill material deposited into the passage over at least a portion of the second conductive layer and electrically coupled to the bond-pad.

Abstract: A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Abstract: One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure.

Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.

Abstract: The present invention provides a nitride semiconductor light-emitting device capable of preventing shortening of the device lifetime due to increase in the driving voltage of the device and internal heat generation, and also providing uniform laser characteristics, even if the device has a ridge stripe structure. On a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN layer 3, an active layer 4, a p-type AlGan layer 5 and a p-type GaN layer 6 are laminated sequentially. On the p-type GaN layer 6, an insulating film 7 and a transparent electrode 8 are formed. A portion of the transparent electrode 8 is formed in contact with the p-type GaN layer 6. A ridge stripe portion D to form a waveguide is configured of a transparent film 9. A region, where the transparent electrode 8 and the p-type GaN layer 6 are in contact with each other, serves as a stripe-shaped current injection region.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Abstract: The invention relates to a light emitter, such as an LED sealed with a resin, in particular, an LED wherein irregularities in a surface of a sealing resin can be formed through a simpler process in order to improve the light output efficiency of the LED. The LED is an LED wherein a liquid sealing resin is mixed with a solid transparent resin different from the sealing resin in specific gravity and subsequently the mixture is injected into a package into which an LED chip is integrated and then cured, thereby sealing the chip, characterized in that the solid transparent resin is fixed to the sealing resin to be partially naked to the sealing-resin-side surface of the LED through which light from the LED chip is emitted to the outside, and be partially embedded in the sealing resin, thereby being projected into the form of convexes. This LED is used for an LED displayer, an LCD backlight source, a lighting device or the like.

Abstract: A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less. In the white LED lamp, a backlight, and an illumination device using the white LED lamp an amount of UV light to be contained in the released light and an amount of heat to be generated from the lamp are decreased to be small.

Abstract: A light emitting diode (LED) is provided with a base substrate, a plurality of light emitting chips disposed on the upper surface of the base substrate and electrically coupled in parallel to one another, and a fluorescent material layer for covering the light emitting chips.

Abstract: An electronic device according to the invention includes a housing, a recess containing an optoelectronic component, and a film including a polyimide, which is over the recess covering the optoelectronic component.

Abstract: An optoelectronic semiconductor module includes a chip carrier, a light emitting semiconductor chip mounted on the chip carrier and a cover element with an at least partly light transmissive cover plate, which is arranged on the side of the semiconductor chip facing away from the chip carrier, and has a frame part, wherein the frame part laterally encloses the semiconductor chip, is joined to the cover plate in a joining-layer free fashion and is joined to the chip carrier on its side remote from the cover plate.

Abstract: A structure of LED of high heat-conducting efficiency is to provide a copper substrate having a plurality of indentations. An insulating layer is formed on the surface of the substrate and the bottom of the indentations. Meanwhile, a set of metallic circuits is formed on the insulating layer of the substrate, and a layer of insulating lacquer is coated on the surface of the metallic circuits, where there is no electric connection and no enclosure. A tin layer is coated on the insulating layer of the indentation and the metallic circuits, where there is no insulating lacquer. Furthermore, a set of light-emitting chips are die bonded on the tin layer of the indentation. Next, the light-emitting chips and the metallic circuits are electrically connected by a set of gold wires. Moreover, a ringed object is arranged on the surface of the substrate, such that the light-emitting chip set, the gold wires and the metallic circuits are enclosed therein.

Abstract: In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

Abstract: A semiconductor light-emitting device includes a substrate having two main surfaces; and an active layer forming part, which is made of a compound semiconductor material, formed on one of the main surfaces, and includes an active layer. A plurality of holes, which pass through the active layer, are formed from the upper surface of the active layer forming part; a plurality of hollow parts, each of which corresponds to each hole, are provided between the active layer and the substrate; and the area of each hollow part is larger than that of the corresponding hole in plan view, and spreads on the lower surface of the active layer forming part, so as to expose a part of the lower surface of the active layer forming part, which overlaps the hollow part in plan view.

Abstract: A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.