Abstract: A device includes a substrate including a first layer and a second layer. The first and second layers are positioned adjacent to each other and comprise a common boundary region extending from the first layer to the second layer. The first layer comprises graphite with a Bernal-crystal structure. The second layer comprises graphite with a rhombohedral crystal structure. The boundary region includes a border region having superconducting properties, namely; at a current density of 0 Ampere/m2 and a magnetic flux density of 0 Tesla exhibiting a critical temperature (Tc) which is higher than ?195° C., and/or at a temperature below the critical temperature (Tc) and a current density of 0 Ampere/m2, exhibiting a critical magnetic flux density (Bk) that is higher than 1 Tesla. The border region is coupled to an electric and/or a magnetic and/or an electromagnetic signal with a frequency greater than or equal to 0 Hertz.

Abstract: The disclosure discloses a copper plating filling process method, comprising the steps of: forming a trench or a through-hole in a dielectric layer; forming a copper seed layer on an inner surface of the hole; allowing a waiting time after forming the copper seed layer and before performing a copper plating process, wherein during the waiting time, a surface of the copper seed layer is oxidized to form a copper oxide layer; performing a reduction process on the copper oxide layer; and filling a copper layer into the hole in the copper plating process afterwards. The copper oxide layer on the surface of the copper seed layer is reduced to copper in the reduction process, and wherein a thickness of the copper seed layers on the inner surface of the hole is uniform. The hole can be a trench or a through-hole.

Abstract: An organic light emitting diode display includes a substrate, a planarization layer disposed on the substrate, a first electrode disposed on the planarization layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, wherein an uneven pattern is formed on a top surface of the planarization layer, the uneven pattern comprises a strip line having a plurality of thicknesses and widths, and a thickness of the strip line becomes smaller as a distance from a center portion of the first electrode becomes larger.

Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.

Abstract: An organic light emitting diodes display includes: a switching thin film transistor and a driving thin film transistor connected to the switching thin film transistor, wherein the driving thin film transistor includes a driving semiconductor layer section, a first gate insulating layer covering the driving semiconductor layer section, a floating gate electrode disposed on the first gate insulating layer, a second gate insulating layer covering the floating gate electrode, and a driving gate electrode disposed on the second gate insulating layer and at a position corresponding to the floating gate electrode, wherein the second gate insulating layer has a permittivity in the range of about 10 to about 100.

Abstract: An organic light-emitting display apparatus includes an active layer of a thin film transistor (TFT), a gate electrode including a transparent conductive material or a metal that on the active layer, a first insulating layer on the substrate, source and drain electrodes electrically connected to the active layer, a second insulating layer between the gate electrode and the source and drain electrodes, a first conductive layer of a transparent conductive material on the first insulating layer, a second conductive layer on the first conductive layer, the second conductive layer being a metal, a third conductive layer on the second conductive layer, the third conductive layer being made of a same material as the source and drain electrodes, and being connected to the first conductive layer; and a protection layer that includes a transparent conductive oxide, the protection layer being on the third conductive layer.

Abstract: It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting device using the light-emitting element. According to one feature of the invention, a light-emitting element includes a first layer 102 containing a light-emitting material, a second layer 103 containing a material having a donor level, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium between a first electrode 101 and a second electrode 106, in which the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the second electrode 106 are provided sequentially, in which the second electrode 106 has a layer containing metal.

Abstract: An optoelectronic semiconductor device has a carrier foil that includes a first surface and a second surface opposite the first surface. At least one electrically conductive contact layer is arranged on the first surface and covers the first surface in places and contains at least one metal. At least one radiation-emitting optoelectronic semiconductor component is arranged on an outer face, remote from the carrier foil, of the electrically conductive contact layer. The radiation-emitting, optoelectronic semiconductor component is electrically conductively connected to the at least one electrically conductive contact layer. The carrier foil is formed with at least one polymer or contains at least one polymer. At least one monomer of the polymer is formed with at least one C—F bond, with C denoting carbon and F fluorine.

Abstract: A semiconductor device includes a substrate configured with a plurality of conductive traces. The traces are configured to electrically couple to an integrated circuit (IC) die and at least one of the plurality of conductive traces includes first electrically conductive portions in a first electrically conductive layer of the substrate, second electrically conductive portions in a second electrically conductive layer of the substrate, and first electrically conductive connections between the first electrically conductive portions and the second electrically conductive portions. The first and second electrically conductive portions and the first electrically conductive connections form a continuous path along at least a portion of the at least one of the conductive traces. Time delay of conducting a signal along the at least one of the conductive traces is within a specified amount of time of time delay of conducting a signal along another one of the plurality of conductive traces.

Abstract: Disclosed is an organic light-emitting device (OLED), wherein a lower electrode, an organic emitting unit, an upper electrode, and a light enhance layer are subsequently formed between a bottom substrate and a top substrate. The light enhance layer has higher refractive index, between 2 and 3, than that of the top substrates, thereby efficiently improving the luminance intensity of the OLED.

Abstract: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconductive material having a photocatalyst such as nickel or nickel-molybdenum coated on the material.

Abstract: An organic light emitting device may include an emission layer between a reflecting electrode and one of a transmitting or transflective electrode, and an optical control layer formed with an organic material that is 5000 to 10,000 ? thick between the transmitting or transflective electrode and the emission layer.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: Disclosed are an organic light emitting diode device and a method of fabricating the organic light emitting diode device capable of achieving high light extraction efficiency even without a high-cost and complicated process. The organic light emitting diode device according to an exemplary embodiment of the present disclosure includes a substrate; a phase change thin film layer formed on the substrate and formed of a phase change material changeable from an amorphous state to a crystalline state or from a crystalline state to an amorphous state; and an anode electrode layer, an organic light emitting layer and a cathode electrode layer which are sequentially formed on the phase change thin film layer.

Abstract: A manufacturing method for an organic electroluminescent device that includes an effectively optical area including display pixels for display and a dummy area surrounding the effectively optical area, the dummy area including dummy pixels not for display is provided. The manufacturing method includes coating a first composite material on a first portion in the effectively optical area, the first portion corresponding to one of the display pixels, and coating a second composite material separately from the coating of the first composite material, the second composite material being coated on a second portion of the dummy area, the second portion corresponding to one of the dummy pixels, the first composite material including a first organic electroluminescent material that is dissolved or dispersed in a solvent and the second composite material including a second organic electroluminescent material that is dissolved or dispersed in a solvent.

Abstract: OLED device (1) comprising a substrate (4) with multiple light emitting OLED segments (5, 6, 7) on top of the substrate (4) each comprising an electroluminescent layer stack (6) of at least an organic light-emitting layer sandwiched between a substrate electrode (5) facing towards the substrate (4) and a counter electrode (7), which are connected in series and are separated from the adjacent OLED segment (5, 6, 7) by an interconnect region (3) located between the adjacent OLED segments comprising a first isolating layer (10) of an electrically non-conducting material between the substrate electrodes (5) of adjacent OLED segments to electrically isolate the adjacent substrate electrodes (5) from each other and a conductive layer (9) of an electrically conducting material to connect the counter electrode (7) of the OLED segment to the substrate electrode (5) of the adjacent OLED segment, wherein the electrically non-conducting material and/or the conducting material is suitable to redirect the light emitted by

Abstract: Provided is an electroluminescent device which has a luminescent layer including quantum dots and which are excellent in life characteristics. An electroluminescent device (1) comprises a first electrode layer (3), a luminescent layer (4) formed on the first electrode layer, and a second electrode layer (5) formed on the luminescent layer. The luminescent layer uses quantum dots (12), each quantum dot being surrounded by silane coupling agent (11).

Abstract: Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

Abstract: Provided is an organic EL display manufacturing method which has: a step wherein an organic EL panel having a substrate and organic EL elements arranged in matrix on the substrate is prepared, and each organic EL element is permitted to have a pixel electrode disposed on the substrate, an organic layer disposed on the pixel electrode, a transparent counter electrode disposed on the organic layer, a sealing layer disposed on the transparent counter electrode, and a color filter disposed on the sealing layer; a step of detecting a defective portion on the organic layer in the organic EL element; and a step of breaking the transparent counter electrode in a region on the defective portion of the transparent counter electrode by irradiating the region on the defective portion with a laser beam. The laser beam is radiated by being tilted with respect to the normal line on the display surface of the organic EL panel.

Abstract: An organic electroluminescent display device includes at least one switching transistor and driving transistor formed on an array substrate, wherein the array substrate includes a gate pad and a date pad formed thereon; a contact electrode, a gate pad top electrode of the gate pad and a data pad top electrode of the data pad formed on a passivation layer, a contact electrode, a top gate pad electrode and a top data pad electrode electrically connected to the exposed portion of a drain electrode of the driving transistor, a gate pad bottom electrode and a data pad bottom electrode respectively; a light-emitting cell including a cathode electrode, an anode electrode and an organic layer interposed therebetween formed on the planarization layer; wherein the cathode electrode is electrically connected to the contact electrode via one of the contact hole; wherein the contact electrode has acid-resistance with respect to an etchant used in patterning the cathode electrode.

Abstract: The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one ?-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.

Abstract: The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film.

Abstract: A method of producing an organic EL element that allows easier patterning of the organic EL layer and reduction of the damage of the electrode layer caused by the organic EL layer and is superior in emission characteristics. Also provided is an organic electroluminescence element, including a substrate, a first electrode layer, a wettability variable layer, an organic EL layer, and a second electrode layer sequentially laminated. The wettability variable layer changes its wettability under the action of a photocatalyst caused by energy irradiation, is inactive to the energy, and has on the surface, a wettability variable pattern having an organopolysiloxane-containing lyophilic region and a liquid repellent region containing a fluorine-containing organopolysiloxane.

Abstract: Disclosed is materials design for prolonging the duration of the low relative dielectric constant of an organic siloxane film having a low relative dielectric constant. Specifically, in an organic siloxane film having a relative dielectric constant of not more than 2.1, the elemental ratio of carbon to silicon in the film is set to not less than 0.10 and not more than 0.55.

Abstract: A high-efficiency, white organic electroluminescent device has such a structure that its emission layer is obtained by laminating sub-emission layers of red, green, and blue, respectively. The green sub-emission layer contacting a hole transport layer has a delayed fluorescent material, and the red sub-emission layer has a phosphorescent light emitting material.

Abstract: Disclosed are semiconductor memory devices containing a plastic substrate and at least one active device supported by the plastic substrate, the active device containing an organic semiconductor material. The semiconductor memory devices containing a plastic substrate may further contain a polymer dielectric and/or a conductive polymer.

Abstract: The present invention relates to an organic light emitting device and a manufacturing method thereof. The organic light emitting device according to an exemplary embodiment of the present invention includes a first thin film transistor disposed on a substrate, an organic layer disposed on the first thin film transistor, a pixel electrode disposed on the organic layer and connected to the first thin film transistor, a partition disposed on the pixel electrode and the organic layer, and an organic emission layer disposed on the pixel electrode and contacting the partition. The partition has an organic layer exposing hole that exposes a portion of the organic layer and an opening that exposes a portion of the pixel electrode.

Abstract: An organic light emitting device includes a transistor having gate, source, and drain electrodes, and first electrode connected to one of the source or drain electrodes. The device also includes an emitting layer positioned on the first electrode and a second electrode positioned on the emitting layer. Each of the source and drain electrodes includes first, second, and third layers having different tapered angles. The first electrode may include a metallic layer and a conductive layer, with a tapered angle of the metallic layer being different from a tapered angle of the conductive layer.

Abstract: It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting device using the light-emitting element. According to one feature of the invention, a light-emitting element includes a first layer 102 containing a light-emitting material, a second layer 103 containing a material having a donor level, a third layer 104 including a transparent conductive film, and a fourth layer 105 containing a hole-transporting medium between a first electrode 101 and a second electrode 106, in which the first layer 102, the second layer 103, the third layer 104, the fourth layer 105, and the second electrode 106 are provided sequentially, in which the second electrode 106 has a layer containing metal.

Abstract: Fabrication of thin-film transistor devices on polymer substrate films that is low-temperature and fully compatible with polymer substrate materials. The process produces micron-sized gate length structures that can be fabricated using inkjet and other standard printing techniques. The process is based on microcrack technology developed for surface conduction emitter configurations for field emission devices.

Abstract: A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor.

Abstract: This invention includes methods of forming trench isolation. In one implementation, isolation trenches are provided within a semiconductor substrate. A liquid is deposited and solidified within the isolation trenches to form a solidified dielectric within the isolation trenches. The dielectric comprises carbon and silicon, and can be considered as having an elevationally outer portion and an elevationally inner portion within the isolation trenches. At least one of carbon removal from and/or oxidation of the outer portion of the solidified dielectric occurs. After such, the dielectric outer portion is etched selective to and effective to expose the dielectric inner portion. After the etching, dielectric material is deposited over the dielectric inner portion to within the isolation trenches.

Abstract: A circuit board includes: a substrate; source and drain electrodes formed on the substrate; an organic semiconductor layer formed on the source and drain electrodes; a gate insulating layer formed on the organic semiconductor layer; and a gate electrode formed on the gate insulating layer, wherein: the substrate includes a first part, a second part, and a third part interposed between the first and second parts and a thickness of the first part or a thickness of the second part is greater than that of the third part; the source electrode is formed on the first part; the drain electrode is formed on the second part; a part of the organic semiconductor layer is formed on the third part; and a thickness of the gate insulating layer disposed on the first and second parts is smaller than that of the gate insulating layer disposed on the third part.

Abstract: An organic memory cell containing an organic semiconductor layer containing a copolymer is disclosed. The copolymer contains a diarylacetylene portion and at least one of an arylacetylene portion and a heterocyclic acetylene portion. The copolymer may be a random copolymer, an alternating copolymer, a random block copolymer, or a block copolymer. Methods of making an organic memory devices/cells containing the copolymer, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.

Abstract: The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel, a source electrode, and a drain electrode. The channel comprises a densified layer of organic molecules with conjugated multiple bonds, axes of the organic molecules being oriented substantially normal to the surface.

Abstract: The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced. Furthermore, because the etching selection ratio of SiOC to SiCN as well as that of SiOC to SiC are small, if SiCN or SiC is used as the etching stopper film, the surface of the metal interconnection layer may be oxidized at the time of photoresist removal, which gives rise to a problem of high contact resistance.

Abstract: It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.

Abstract: The present invention provides an electro-optical device capable of achieving an increased light emission efficiency and an enhanced visibility. An organic electroluminescents (EL) display device has a plurality of material layers including a luminescent layer. In a plurality of material layers layered in the direction of light emission from the luminescent layer, first and second insulating interlayers are disposed between a substrate, which is positioned at the outermost surface, and the luminescent layer. The first and second insulating interlayers have a refractive index lower than that of the substrate. Accordingly, by forming predetermined materials having a low refractive index, the resulting low refractive index layers have a low dielectric constant, and consequently, the capacity between wires can be reduced.

Abstract: This invention includes methods of forming trench isolation. In one implementation, isolation trenches are provided within a semiconductor substrate. A liquid is deposited and solidified within the isolation trenches to form a solidified dielectric within the isolation trenches. The dielectric comprises carbon and silicon, and can be considered as having an elevationally outer portion and an elevationally inner portion within the isolation trenches. At least one of carbon removal from and/or oxidation of the outer portion of the solidified dielectric occurs. After such, the dielectric outer portion is etched selective to and effective to expose the dielectric inner portion. After the etching, dielectric material is deposited over the dielectric inner portion to within the isolation trenches.

Abstract: Disclosed herein is a copolymer, which may include side chains which may decrease the surface energy of an insulating layer, thereby improving the alignment of a semiconductor material, and side chains including photoreactive functional groups having an increased degree of cross-linking, thereby improving the characteristics of an organic thin film transistor manufactured using the same, an organic insulating layer composition including the copolymer, an organic insulating layer, an organic thin film transistor, an electronic device including the same and methods of fabricating the same. According to the copolymer of example embodiments, the surface energy of an insulating layer may be decreased, so that the alignment of a semiconductor material may be improved, thereby improving the threshold voltage and charge mobility and decreasing the generation of hysteresis at the time of driving the transistor.

Abstract: An organic light emitting device includes a transistor having gate, source, and drain electrodes, and first electrode connected to one of the source or drain electrodes. The device also includes an emitting layer positioned on the first electrode and a second electrode positioned on the emitting layer. Each of the source and drain electrodes includes first, second, and third layers having different tapered angles. The first electrode may include a metallic layer and a conductive layer, with a tapered angle of the metallic layer being different from a tapered angle of the conductive layer.

Abstract: A semiconductor device and an electro-optical device that ensures a stable output are provided even when there is a change in a source-drain current in a saturated operation region of a thin film transistor due to kink effects. The thin film transistor has a multi-gate structure with a polycrystalline silicon film as an active layer, and a source-side first thin film transistor portion and a drain-side second thin film transistor portion connected in series. The first thin film transistor portion has a drain-side back gate electrode that is connected with a first front gate electrode. The second thin film transistor portion has a source-side back gate electrode that is connected with a second front gate electrode.

Abstract: There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture.

Abstract: The invention relates to an organic component comprising an improved top electrode and to a production method therefor. The top electrode is made of an organic material that is applied by means of printing techniques.

Abstract: A thin film transistor and a method of manufacturing the same are disclosed. More specifically, there is provided a thin film transistor having a thin film transistor and a method of manufacturing the same wherein an inorganic layer and an organic planarization layer are sequentially formed on the surface of a substrate on source/drain electrode of a thin film transistor having a semiconductor layer, a gate, source/drain areas and the source/drain electrodes, and a blanket etching process is performed to the organic planarization layer to planarize the inorganic layer. After forming a photoresist pattern on the inorganic layer, an etching process is performed to form a hole coupling a pixel electrode with one of the source/drain electrodes. According to the manufacturing method, the hole may be formed using one mask, thereby simplifying a manufacturing process, and improving an adhesion with the pixel electrode by the inorganic layer formed above.

Abstract: Provided is a field-effect transistor (10) which comprises a metal or carbon source electrode (14) and a layer of a functional organic semiconductor (28). A column of an injection material (48) extends through the layer of the functional organic semiconductor (28), the column being in contact with both the source electrode (14) and the layer of the functional organic semiconductor (28). This column (48) facilitates the transfer charge carriers between the source electrode (14) and semiconductor layer (28). The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.

Abstract: The present invention provides a display including a substrate and an electrode layer including a plurality of conductors, wherein a silane derivative layer is interposed between the substrate and the electrode layer to increase the bond strength between the substrate and the electrode layer. The invention also provides a method of manufacturing the device.

Abstract: A three terminal electrical bistable device that includes a tri-layer composed of an electrically conductive mixed layer sandwiched between two layers of low conductivity organic material that is interposed between a top electrode and a bottom electrode. The conducting mixed layer serves as the middle electrode. The device includes two memory cells composed of electrode/organic layer/mixed layer, where the interfaces between the electrically conductive mixed layer and the low conductivity organic layer exhibit bistable behavior.

Abstract: Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 ? to 1 ?m. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.

Abstract: A method for manufacturing an organic EL device comprising: coating a composition including an organic EL material on a plurality of electrodes to form an organic EL layer on each electrode; defining an effectively optical area in which the plurality of electrodes are formed; and defining a coating area which is broader than the effectively optical area, on which the composition including an organic EL material is to be coated. According to this method, a uniform display device without uneven luminance and uneven chrominance within a pixel or among a plurality of pixels in the effectively optical area can be obtained.