Abstract: An organic FET in which the interfaces (electrode interfaces) between a semiconductor layer and a source electrode and between a semiconductor layer and a drain electrode are improved by employing a technique to increase ON-state current (driving current) and to reduce contact resistance. The organic FET includes a substrate; a gate insulating film disposed on the substrate; a metal source electrode and a metal drain electrode disposed on the gate insulating film in such a manner that they face each other in a horizontal direction; and an organic semiconductor layer covering the gate insulating film, the source electrode and the drain electrode, wherein a first organic molecule layer and a second organic molecule layer are formed on the interfaces (electrode interfaces) between a semiconductor layer and a source electrode and between a semiconductor layer and a drain electrode.

Abstract: Solutions comprising: (i) at least one organic semiconductor, (ii) at least one organic solvent A having a boiling point, and (iii) at least one organic solvent B having a boiling point; wherein the at least one organic semiconductor comprises at least one high molecular weight component, wherein the at least one organic solvent A is a good solvent for the at least one organic semiconductor, wherein the at least one organic solvent B is a poor solvent for the at least one organic semiconductor; and wherein the boiling point of the at least one solvent A is greater than the boiling point of the at least one solvent B; and the use of such solutions in processes for forming organic semiconductor layers on substrates and devices formed by such processes.

Abstract: Using a synthetic molecular spring device in a system for dynamically controlling a system property, such as momentum, topography, and electronic behavior. System features (a) the synthetic molecular spring device having (i) at least one synthetic molecular assembly each featuring at least one chemical unit including at least one: (1) atom; (2) complexing group complexed to at least one atom; (3) axial ligand reversibly physicochemically paired with at least one complexed atom; and (4) substantially elastic molecular linker; and, (ii) an activating mechanism directed to at least one atom-axial ligand pair; and, (b) a selected unit operatively coupled to synthetic molecular assembly, and exhibiting the system property.

Abstract: There is provided a semiconductor device able to increase the mobility of carriers and reduce the current in the OFF state. The semiconductor device includes a gate electrode, an insulating layer on the gate electrode, a first electrode on the insulating layer, a second electrode on the insulating layer at an interval with the first electrode, an organic semiconductor layer disposed in the interval between the first electrode and the second electrode and covering at least part of the first electrode and the second electrode, and a first resistance layer formed on the organic semiconductor layer and having an electrical resistance lower than that of the organic semiconductor layer. The first resistance layer is formed from conductive polymers.

Abstract: A light emitting element having a superior light emitting characteristic is provided by forming a region partly including a phosphor (light emitting region) in manufacturing of a light emitting element having an organic compound layer using a high molecular weight material. A solution in which a high polymer having a degree of polymerization of 50 or more is dissolved in a solvent is applied by a spin coating method, and then a low polymer which is composed of the same repetition units as the high polymer and has a degree of polymerization of 2 to 5 and a phosphor are coevaporated to form a light emitting region (105) and only a low polymer is vapor-deposited on the light emitting region to form an organic compound layer (103). Thus, the light emitting region (105) can be partly formed.

Abstract: An organic field-effect transistor is disclosed in which an insulating layer having a thickness of 0.3 m or less is provided on a substantially planar electrode layer. This transistor has a channel length down to 2 m, satisfying the condition for voltage amplification well below 10V, and has an on/off ratio of about 25.

Abstract: A thin film transistor includes a source electrode and a drain electrode which are disposed to face each other, an organic semiconductor layer provided at least between the source electrode and the drain electrode, a plurality of gate lines extending over the source electrode, the organic semiconductor layer, and the drain electrode, and a gate insulating layer interposed between the source electrode, the drain electrode, and the organic semiconductor layer and the plurality of gate lines.

Abstract: A semiconductor nanocrystal can have a barbell shape. The nanocrystal can include two semiconductor materials selected so that upon excitation, one charge carrier is substantially confined to the one semiconductor material and the other charge carrier is substantially confined to the other semiconductor material.

Abstract: An organic thin film transistor (TFT) includes: an organic semiconductor film; source and drain electrodes electrically connected to the organic semiconductor film; a gate electrode electrically insulated from the source and drain electrodes and the organic semiconductor film; and an organic acceptor film interposed between the source and drain electrodes and the organic semiconductor film.

Abstract: The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

Abstract: A method for stripping a photo-resist includes the steps of: (a) wet stripping a photo-resist off from a substrate; and (b) rinsing the substrate under high-speed conveyance using an aqua knife. A speed of the conveyance of the substrate is 0.2 m/s or higher. Because the aqua knife can rinse the stripping solvent and the reaction product in the stripping step remained on the substrate that can erode an aluminum film below the photo-resist, aluminum erosion is significantly reduced. In addition, the substrate is conveyed in a high speed, such that the rinsing step is transient. Therefore, the aluminum erosion issued in the rinsing step is little. Moreover, there is no need for an isopropyl alcohol rinsing step or a carbon dioxide rinsing step. Thus, the method has increased yield and reduced cost. A related apparatus is also provided.

Abstract: Semiconductor devices are described that include a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound. The acenyl group is selected from 2-naphtyl, 2-anthracenyl, or 2-tetracenyl. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound.

Abstract: An electronic device includes first and second electrical contacts electrically coupled to a semiconductor polymer film, which includes mono-substituted diphenylhydrazone.

Abstract: A thin film transistor and a method of manufacturing the same are disclosed. More specifically, there is provided a thin film transistor having a thin film transistor and a method of manufacturing the same wherein an inorganic layer and an organic planarization layer are sequentially formed on the surface of a substrate on source/drain electrode of a thin film transistor having a semiconductor layer, a gate, source/drain areas and the source/drain electrodes, and a blanket etching process is performed to the organic planarization layer to planarize the inorganic layer. After forming a photoresist pattern on the inorganic layer, an etching process is performed to form a hole coupling a pixel electrode with one of the source/drain electrodes. According to the manufacturing method, the hole may be formed using one mask, thereby simplifying a manufacturing process, and improving an adhesion with the pixel electrode by the inorganic layer formed above.

Abstract: A semiconductor device includes a semiconductor section formed from an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section, wherein a layer of a nitrile or of an isonitrile is arranged between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The nitrile or isonitrile acts as a charge transfer molecule facilitating the transfer of charge carriers between contact and organic semiconductor material. This allows the contact resistance between contact and organic semiconductor material to be significantly reduced.

Abstract: There is provided a semiconductor device able to increase the mobility of carriers and reduce the current in the OFF state. The semiconductor device includes a gate electrode, an insulating layer on the gate electrode, a first electrode on the insulating layer, a second electrode on the insulating layer at an interval with the first electrode, an organic semiconductor layer disposed in the interval between the first electrode and the second electrode and covering at least part of the first electrode and the second electrode, and a first resistance layer formed on the organic semiconductor layer and having an electrical resistance lower than that of the organic semiconductor layer. The first resistance layer is formed from conductive polymers.

Abstract: Low temperature, ambient pressure processes are desired for fabrication of transistors on flexible polymer substrates. Lamination of semiconductors is such a process. The semiconductor is deposited on a donor substrate. The donor is positioned over a receiver substrate, which may be patterned with additional transistor elements. The semiconductor is transferred from the donor to the receiver by lamination.

Abstract: Thin film transistor, and organic EL display of the same and method for fabricating the same, including a high temperature substrate of metal or ceramic, a semiconductor layer formed in a region of the substrate having a source region and a drain region, a source electrode in contact with the source region in the semiconductor layer for use as a data line, a pixel electrode formed in each of the pixel region in contact with the drain region in the semiconductor layer, an organic EL layer formed on the pixel electrode, a common electrode formed on the organic EL layer, and a transparent protection film on the common electrode.

Abstract: A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an organic semiconductor layer that contains a photosensitive compound. The organic semiconductor layer is formed into memory cells using patterning techniques.

Abstract: An organic electroluminescent device includes first and second substrates attached by a seal pattern, array elements including a plurality of thin film transistors formed on the first substrate, a first electrode formed on a rear surface of the second substrate, a plurality of electrode separators formed on the rear surface of the first electrode, wherein the plurality of electrode separators is made of an insulating material defining sub-pixel regions that correspond to each thin film transistor, an organic electroluminescent layer formed on a rear surface of the first electrode in each of the sub-pixel regions, a second electrode formed on a rear surface of the organic electroluminescent layer in each of sub-pixel regions, a conductive connector formed between the first and second substrates in each sub-pixel region for connecting to the second electrode of a sub-pixel region.