Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.

Abstract: A method of designing features on a semiconductor wafer. A design of active or functional features is provided for chiplets separated by kerf areas on the wafer. The method then includes determining pattern density of the chiplet features, and applying a pattern of spaced dummy features on chiplet area not covered by active or functional features, as well as in the kerf areas. The dummy features are uniformly expanded or reduced in size until a desired dummy feature pattern density is reached.

Abstract: A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer formed from one or more nitride monolayers i.e., AlN, an ALD deposited intermediate oxide junction layer formed from one or more oxide monolayers i.e., AlxOy, disposed on the first nitride junction layer, and an ALD deposited second nitride junction layer formed from one or more nitride monolayers i.e., AlN, disposed on top of the intermediate oxide junction layer. The multilayer tunnel barrier structure is formed by using atomic layer deposition techniques to provide improved tunneling characteristics while also providing anatomically smooth barrier interfaces.

Abstract: Method of fabricating 3-dimensional force input control device are disclosed.

Abstract: A quantum supermemory is based on the cells of nanostructured material. The nanostructured material includes consists of clusters with tunnel-transparent coatings. The clusters have sizes at which resonant electron features are manifested. The size is determined by the circular radius of the electronic wave, according to the formula r0=/(me?2c)=7.2517 nm, where is the Plank contstant, me is the electron mass, ?=1/137,036 is the fine structure constant, c is the speed of light. The cluster size is set within the range r0=4r0, and the width of the tunnel-transparent gap is less than r0=7.2517 nm. The nanostructured material stores energy (charge) uniformly along its whole volume with the specific density of 1.66*103 J/cm3. Based on this material energy-independent rewritable memory is obtained with the writing density up to 28 Gbyte/cm2, the maximum working temperature being 878° C. and the maximum timing frequency being 175 Ghz.

Abstract: A pair of electrodes are provided to sandwich an organic semiconductor layer. A lead-out electrode is provided to each of the organic semiconductor layer and the two electrodes constituting the pair of electrodes. Consequently, there is provided an organic semiconductor device having a simple configuration.