Abstract: An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the s

Abstract: The invention relates to novel substituted dibenzo[d,d?]benzo[1,2-b;4,5-b?]dithiophenes (DBBDT), to methods of their synthesis, to organic semiconducting materials, formulations and layers comprising them, and to electronic devices, like organic field effect transistors (OFETs), comprising them.

Abstract: Disclosed is a block copolymer characterized by containing a block (A) containing two or more different repeating units respectively composed of a specific divalent heterocyclic group, and a repeating unit composed of an arylene group, and a block (B) containing a repeating unit composed of an arylene group and a repeating unit composed of a divalent aromatic amine residue. Also disclosed are a composition containing a solvent, a light-emitting material other than the block copolymer, a hole-transporting material other than the block copolymer, an electron-transporting material other than the block copolymer or a combination of two or more of them, in addition to the block copolymer; a light-emitting thin film characterized by containing the block copolymer; and a polymer light-emitting device characterized by having an anode, a cathode and an organic layer containing the block copolymer and arranged between the anode and the cathode.

Abstract: The present invention relates to polymers which contain novel structural units of the formula (1). The inventive materials exhibit better solubility and improved efficiency when used in a polymeric organic light-emitting diode.

Abstract: Diodes having p-type and n-type regions in contact, having at least one of either the p-type region or n-type region including a conjugated organic material doped with an immobile dopant, conjugated organic materials for incorporation into such diodes, and methods of manufacturing such diodes and materials are provided.

Abstract: A method includes chemically bonding a polymeric material to a self-assembled molecular film that is chemically bonded to a surface of a substrate. The self-assembled molecular film includes one or more defect sites and a plurality of active device molecules, each of the plurality of active device molecules including a molecular switching moiety having a self-assembling connecting group at one end of the moiety and a linking group at an opposed end of the moiety. The polymeric material chemically bonds to at least some of the linking groups of the plurality of active device molecules, causing the formation of the self-assembled molecular layer covering the plurality of active device molecules and the defect site(s).

Abstract: The present invention provides an organic semiconductor composite containing a certain thiophene compound and carbon nanotubes, which can be formed into a film by a coating process such as an inkjet process, has high charge mobility and can maintain a high on/off ratio even in air, an organic transistor material and an organic field effect transistor.

Abstract: The invention discloses an organic radiation-emitting device which includes a substrate, and at least one radiation-emitting organic layer, which is arranged on the substrate between a first and a second electrode layer. A first charge carrier transport layer, which includes a first charge carrier transport material and a first salt, is arranged between the first electrode layer and the radiation-emitting organic layer.

Abstract: A light-emissive device is prepared by depositing a polymer layer on a substrate. The deposition process utilizes a formulation comprising a conjugated polymer dissolved in a solvent, the solvent including a trialkyl-substituted aromatic hydrocarbon wherein at least two of the alkyl substituents are ortho to one another. The deposition of the polymer layer on the substrate may be accomplished by an ink-jet method.

Abstract: Disclosed is a polymer light-emitting device having a light-emitting layer arranged between an anode and a cathode, and a hole transport layer arranged between the light-emitting layer and the anode. This polymer light-emitting device is characterized in that the hole transport layer is a layer containing a polymer compound which contains a repeating unit represented by the general formula (I) below, a repeating unit represented by the general formula (II) below and a repeating unit represented by the general formula (III) below. (In the formula (I), R1, R2, R3 and R4 may be the same or different and respectively represent a hydrogen atom or the like; R5, R6, R7 and R8 may be the same or different and respectively represent an alkyl group or the like; and a, b, c and d may be the same or different and respectively represent an integer of 0-3. When a plurality of R5's, R6's, R7's and R8's are present, they may be the same as or different from one another.

Abstract: Disclosed is a polymer having excellent solvent resistance which can be produced by using a polycarbonate diol having a repeating unit represented by the formula (1) and/or (2), having a hydroxyl group at both termini, and having a number average molecular weight of from 300 to 50,000: wherein R1 represents a linear or branched hydrocarbon group having 2 to 50 carbon atoms; and n represents an integer of 2 to 50, wherein R2 represents a linear or branched hydrocarbon group having 10 to 50 carbon atoms.

Abstract: A rectifying diode comprising a semiconducting layer, a first electrode, and a second electrode, wherein the width of the region of closest contact between the two electrodes is on the order of the thickness of the semiconducting layer.

Abstract: Electronic device comprising at least: a substrate; an area on the substrate which has to be protected against moisture and/or oxygen; at least one contact; an encapsulation layer system comprising at least a first inorganic layer the at least one contact extending from the said sealed area to a part of the substrate not sealed by the encapsulation layer system, the contact comprising a shunt, i.e. an interruption which interruption is bridged by a electrically conductive bridge; the first inorganic layer of the encapsulation system being applied so that it is in direct physical contact with the electrically conductive bridge; the bridge having a structure and shape which can be sealingly covered by the encapsulation layer system and is made from a material through which no moisture and/or oxygen can penetrate. The invention also provides a method for manufacturing such a device.

Abstract: A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.

Abstract: A main subject is to provide a novel method for patterning of organic film which is suitable for manufacturing various organic devices. In a method for patterning of an organic film formed at a prescribed region, an organic covering layer forming step where an organic covering layer which includes a metal complex is formed on the organic film at a portion which corresponds to a portion where the organic film should be remained after patterning, and a plasma etching step where the organic film which is located at the portion of being not covered with the organic covering layer is etched out by irradiating the organic film with a plasma from above the organic covering layer after the organic covering layer forming step, are included.

Abstract: An electric organic component and a method for the production thereof is disclosed. The component includes a substrate, a first electrode, a first electrically semiconductive layer on the first electrode, an organic functional layer on the first electrically semiconductive layer and a second electrode on the organic functional layer. The first or the second electrode may be arranged on the substrate. The electrically semiconductive layer is doped with a dopant which comprises rhenium compounds.

Abstract: A composition for photosensitive dielectric material is provided. The composition includes 4 to 10 percent by weight of a polymer material, 1.5 to 10 percent by weight of a crosslinking agent, 0.32 to 2 percent by weight of a photoacid generator (PAG) and 78 to 94.18 percent by weight of solvent, based on a total weight of the composition.

Abstract: A hybrid photovoltaic cell comprising a composite substrate of a nanotube or nanorod array of metal oxide infiltrated with a monomer precursor and subsequently polymerized in situ via UV irradiation. In an embodiment, the photovoltaic cell comprises an electron accepting TiO2 nanotube array infiltrated with a photo-sensitive electron donating conjugated polymer. The conjugated polymer may be formed in situ through UV irradiation polymerizing a monomer precursor such as 2,5-diiodothiophene (DIT).

Abstract: Use of certain materials in hole injection layer and/or hole transport layer can improve operational lifetimes in organic devices. Polymers having fused aromatic side groups such as polyvinylnaphthol polymers can be used in conjunction with conjugated polymers. Inks can be formulated and cast as films in organic electronic devices including OLEDs, SMOLEDs, and PLEDs. One embodiment provides a composition comprising: at least one conjugated polymer, and at least one second polymer different from the conjugated polymer comprising at least one optionally substituted fused aromatic hydrocarbon side group. The substituent can be hydroxyl. Aqueous-based inks can be formulated.

Abstract: The object of the present invention is to provide a method of manufacturing a semiconductor element which can produce a semiconductor element provided with a semiconductor layer having a high carrier transport ability, a semiconductor element manufactured by the semiconductor element manufacturing method, an electronic device provided with the semiconductor element, and electronic equipment having a high reliability.

Abstract: The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance.

Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

Abstract: Example embodiments disclosed herein may relate to organic electronic and/or organic optoelectronic devices, which may further relate to hybrid organic/nanoparticle devices with dual functions of resonant tunneling and light emission behaviors.

Abstract: Disclosed are embodiments of organic thin-film transistors (OTFT) with a gate insulator layer comprised of nanocomposites incorporating metal oxide nanoparticles coated by organic ligands and methods of fabricating such OTFTs. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.

Abstract: Dibenzorylenetetracarboximides of the general formula I in which the variables are each defined as follows: R? are identical or different radicals: hydrogen; optionally substituted aryloxy, arylthio, hetaryloxy or hetarylthio; R are identical or different radicals: hydrogen; optionally substituted C1-C30-alkyl, C3-C8-cycloalkyl, aryl or hetaryl; m, n are each independently 0 or 1.

Abstract: Metal complexes of the formula I or I? [LDH]nM[L]m (I) [LTH](M[L]p)2 (I1) wherein n is an integer 1 or 2, m and p each is an integer 1 or 2, the sum (n+m) being 2 or 3, M is a metal with an atomic weight of greater than 40 such as Iridium, L is a ligand as described in claim 1, and LDH is a bidentate ligand of the formula I1 and LTH is a dimer of LDH, binding to 2 metal atoms M, of the formula II? wherein W is selected from O, S, NR4, CR5R6, X is N or CR7, Y is selected from O, S, NR8; and further residues are as defined in claim 1, show good light emitting efficiency in electroluminescent applications.

Abstract: A material for an organic electroluminescence device represented by the following formula (I): wherein X1 is one of divalent groups represented by the following (a) to (e); Y1 to Y4 are independently a carbon atom or a nitrogen atom; and R1 to R4 are independently a hydrogen atom, an alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocycle, a halogen atom, a fluoroalkyl group or a cyano group, or R1 and R2, and R3 and R4 are independently bonded to form a substituted or unsubstituted aromatic ring or a substituted or unsubstituted heterocycle.

Abstract: The present invention relates to charge injection from metallic conductors to semiconductor or insulation materials based on organic or inorganic molecules and macromolecules with electrical or optical properties, and specifically to a new charge injection layer for electro-optical devices comprising a polymer with conjugated units and a salt mixed with the aforementioned polymer, characterized in that the oxidation state of the polymer is not modified when it is mixed with the salt. Despite the fact that there is no change in the oxidation state of the polymer, the polymer and salt mixture according to the invention makes it possible for a high enough number of charges to reach the optically active layer, such that the efficiency in the charge injection process is increased up to levels exceeding even those provided by the standard PEDOT.

Abstract: Disclosed is an organic electroluminescent device (organic EL device) which is improved in luminous efficiency, fully secured of driving stability, and of simple constitution. Also disclosed is a compound useful for the fabrication of said organic EL device. The organic electroluminescent device comprises organic layers including a light-emitting layer disposed between an anode and a cathode which are piled one upon another on a substrate and said organic layers comprise a compound represented by general formula (1). A light-emitting layer containing a phosphorescent dopant is suitable for an organic layer comprising a compound represented by general formula (1).

Abstract: The present invention provides a novel material capable of realizing excellent color purity of blue, a light-emitting element and a light-emitting device using the novel material. The present invention provides an oligonaphthalene derivative represented by the formula (1). The oligonaphthalene derivatives of the present invention have an extremely large band gap, can emit light with extremely short wavelength, and can emit blue light with favorable color purity. In addition, a light-emitting element that can exhibit excellent color purity of blue can be obtained by applying this material to the light-emitting element or a light-emitting device; therefore the light-emitting element having superior color reproducibility can be provided.

Abstract: Provided are novel organic electroluminescent compounds and organic electroluminescent devices comprising the same as electroluminescent material. Specifically, the organic electroluminescent compounds according to the invention are characterized in that they are represented by Chemical Formula (1): wherein, L is selected from the following structures. The organic electroluminescent compounds according to the invention exhibit high luminous efficiency in blue color and excellent life property as a material, so that an OLED having very good operation life can be prepared therefrom.

Abstract: Provided are a compound represented by Formula 1 or 2 below and an organic light emitting device including an organic layer having the compound: where Ar1, Ar2, Ar3, R1, R2 and R3 are as described in the detailed description. Since the compound represented by Formula 1 or 2 has excellent electrical properties and excellent charge transport capabilities, the compound can be efficiently used as a hole injecting material, a hole transporting material, and/or an emitting material which is suitable for a fluorescent or phosphorescent organic light emitting device which can realize all colors such as red, green, blue, and white. Thus, an OLED including the compound can have high efficiency, high current density, low driving voltage, excellent brightness, and long lifetime.

Abstract: The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage.

Abstract: The present teachings provide silole-based polymers that can be used as p-type semiconductors. More specifically, the present teachings provide polymers that include a repeating unit of Formula I: wherein R1, R2, R3, R4, R5R6, Z, x, and x? are as defined herein. The present teachings also provide methods of preparing these polymers, and relate to various compositions, composites, and devices that incorporate these polymers.

Abstract: A method for forming an organic semiconductor thin film includes the steps of forming a mixed ink layer on a principal plane of a printing plate, the mixed ink layer including a mixture of an organic semiconductor material incapable of transcription and an organic material capable of transcription from the printing plate to a substrate in ink form dissolved in a solvent, and forming an organic semiconductor thin film by transcribing the mixed ink layer onto the substrate by transcribing the mixed ink layer on the printing plate to the substrate.

Abstract: An organic transistor includes a semiconductor section that includes a thin-film laminate in which a first organic thin film and a second organic thin film are alternately stacked. The thin-film laminate includes at least two layers of the first organic thin film. The first organic thin film is a pentacene thin film, and the second organic thin film is an amorphous organic thin film. The pentacene thin film may be a pentacene bilayer thin film, and the amorphous organic thin film may be a tetraaryldiamine thin film. The tetraaryldiamine thin film may be an ?-NPD thin film. The organic transistor has improved transistor characteristics (e.g., mobility, ON/OFF ratio, or threshold value control).

Abstract: A semiconductor composite film includes a semiconductor thin film layer containing an organic semiconductor material, an insulating thin film layer formed from a polymer material phase-separated from the organic semiconductor material in the film thickness direction, and a fine particle material dispersed in at least one of the semiconductor thin film layer and the insulating thin film layer.

Abstract: A thiophene compound having a phosphate group, for example, one represented by the formula [1]. The compound has high resistance to heat and oxidation and can be improved in solubility or dispersibility in various solvents. (In the formula, R1 and R2 each independently represents, e.g., hydrogen, halogeno, cyano, or phenyl optionally substituted by W; and R3 to R6 each independently represents —OR7, SR8, or —NR92, provided that R7 to R9 each independently represents hydrogen, C1-10 alkyl, or phenyl optionally substituted by W and W represents halogeno, cyano, nitro, hydroxyl, mercapto, amino, formyl, carboxy, C1-10 alkyl, etc.

Abstract: An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a compound having a specified structure; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed (driving speed) and has a large ON/OFF ratio, are provided.

Abstract: The present invention relates to an organic light emitting device and a manufacturing method thereof. The organic light emitting device according to an exemplary embodiment of the present invention includes a first thin film transistor disposed on a substrate, an organic layer disposed on the first thin film transistor, a pixel electrode disposed on the organic layer and connected to the first thin film transistor, a partition disposed on the pixel electrode and the organic layer, and an organic emission layer disposed on the pixel electrode and contacting the partition. The partition has an organic layer exposing hole that exposes a portion of the organic layer and an opening that exposes a portion of the pixel electrode.

Abstract: The present invention relates to an organic transistor that includes an organic semiconductor layer containing a thiazolothiazole derivative and an insulating organic material having a band gap of 3 eV or more or no portion having four pairs or more of double bonds and single bonds continuously connected.

Abstract: An electroluminescent device comprises, in order: an opaque semiconducting substrate (1) including active circuitry (2); an anode (3); a layer of oxide material (4); a hole transport layer (5); a layer of light-emitting polymer (6); a transparent cathode (7); and an encapsulation (8). The oxide material (4) may in particular comprise a transition metal oxide. A method of forming the device is also disclosed.

Abstract: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

Abstract: A polymer compound comprising a repeating unit of the following formula (1) and having a polystyrene-reduced number average molecular weight of 1×103 to 1×108: [wherein, Ar1 and Ar2 represent an arylene group, divalent heterocyclic group or divalent aromatic amine group. Z1 represents —CR1?CR2— or —C?C—. Here, R1 and R2 represent a hydrogen atom, alkyl group, aryl group or the like. m and n represent 1 or 2. Rs and Rt represent a hydrogen atom, alkyl group or alkoxy group.].

Abstract: A low channel length organic field-effect transistor can be produced in high volume and at low cost. The transistor structure includes successively deposited patterned layers of a first conductor layer acting as a source terminal, a first dielectric layer, a second conductor layer acting as a drain terminal, a semiconductor layer, a second dielectric layer, and a third conductor layer acting as the gate terminal. In this structure, the transistor is formed on the edge of the first dielectric between the first conductor layer and the second conductor layer. The second conductor layer is deposited on the raised surfaces formed by the dielectric such that conductive ink does not flow into the trough between the dielectric raised surfaces. This is accomplished by coating a flat or rotary print plate with the conductive ink, and applying the appropriate pressure to deposit the materials only on the raised surfaces of the dielectric. The second metal is automatically aligned to the layer beneath it.

Abstract: A composition for use in the manufacture of an opto-electrical device, the composition comprising: a conductive or semi-conductive organic material; a solvent; and a first additive, wherein the first additive is an alcohol ether having a boiling point lower than 170° C.

Abstract: A memory device including an organic material layer between an upper electrode and a lower electrode. The organic material layer includes a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it shows a nonvolatile property, has high integration density and low power consumption characteristics, and may be inexpensively fabricated through a simple process.

Abstract: A polymer mixture emits a broad spectrum of visible light that appears white or near-white in the aggregate. The polymer mixture comprises two (or more) components in the active layer. A heavy atom, such as platinum and/or iridium, present in the backbone of the mixture acts via a spin-orbit coupling mechanism to cause the ratio of fluorescent to phosphorescent light emission bands to be of approximately equal strength. These two broad emissions overlap. resulting in an emission spectrum that appears to the eye to be white.

Abstract: An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.

Abstract: The invention relates to a polymer transistor arrangement, an integrated circuit arrangement and a method for producing a polymer transistor arrangement. The polymer transistor arrangement contains a polymer transistor formed in and/or on a substrate. The polymer transistor contains a first source/drain region, a second source/drain region, a channel region between the first and second source/drain regions, a gate region and a gate-insulating layer between channel region and gate region. A drive circuit of the polymer transistor arrangement is set up in such a way that it provides the source/drain regions and the gate region with electrical potentials such that the junction between at least one of the source/drain regions and the channel region can be operated as a diode.