Abstract: The invention relates to a polymer transistor arrangement, an integrated circuit arrangement and a method for producing a polymer transistor arrangement. The polymer transistor arrangement contains a polymer transistor formed in and/or on a substrate. The polymer transistor contains a first source/drain region, a second source/drain region, a channel region between the first and second source/drain regions, a gate region and a gate-insulating layer between channel region and gate region. A drive circuit of the polymer transistor arrangement is set up in such a way that it provides the source/drain regions and the gate region with electrical potentials such that the junction between at least one of the source/drain regions and the channel region can be operated as a diode.

Abstract: A method can be adapted for design and preparation of a matrix nanocomposite sensing film for hydrogen sulphide SAW/BAW detection at room temperature. A matrix nanocomposite can be synthesized by incorporating both single-wall and multi-wall thiolated carbon nanotubes into conductive organic polymers or ceramic nanocrystalline in a properly functionalized manner. A thin organic sensing film can be prepared based on the matrix nanocomposite. The matrix nanocomposite sensing film can be prepared on a surface of a SAW/BAW device by an additive process or a direct printing process. Finally, the sensing film can be consolidated by thermal annealing or laser annealing under ambient conditions in order to obtain the stable sensing film with higher sensitivity and electrical properties for a SAW/BAW based H2S sensor.

Abstract: The invention relates to a material for applying thin organic layers having a conductivity that can be set in a defined manner. The material comprises at least one mixture consisting of two different fractions of a functional polymer, preferably in a solvent, and is applied, for example, in the form of a thin and low-conductive functional layer of an organic light-emitting diode (OLED) by means of different application techniques.

Abstract: A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer. The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other. Further, an electrical charge is localized on the organic dopant.

Abstract: Field-effect transistor comprising a gate electrode layer, a first dielectric layer, a source electrode, a drain electrode, an organic semiconductor and a second dielectric layer, wherein the first dielectric layer is located on the gate electrode layer, the source electrode, the drain electrode and the organic semiconductor are located above the first dielectric layer, the source electrode and the drain electrode are in contact with the organic semiconductor, wherein the second dielectric layer is placed upon the assembly of source electrode, drain electrode and organic semiconductor and wherein during operation of the field-effect transistor the capacitance of the assembly comprising the gate electrode layer and the first dielectric layer is lower than the capacitance of the second dielectric layer. Further a sensor system comprising such a field-effect transistor and the use of a sensor system for detecting molecules is disclosed.

Abstract: A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method BB includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film Si wafer Si wafer transistor incorporating the sol-gel film are also disclosed.

Abstract: Use of certain materials in hole injection or hole transport layers can improve the operational lifetimes in organic electronic devices. Compositions comprising a doped conjugated polymer, doped with a redox dopant, including iodonium salt, can increase lifetimes. Inks can be formulated and cast as films in organic electronic devices including OLEDs, PHOLEDs, and OPVs. One embodiment provides a composition with a conjugated polymer doped with a redox dopant. Non-aqueous based inks can be formulated. Iodonium salts can be used.

Abstract: Rapid thermal processing of printed electrodes and cathodes for organic electronic devices and light-emitting polymer devices (LEPDs) to prevent detrimental cathode ink/underlying layer interactions is described herein. The ink layer printed cathode can be thinned during fabrication using high mesh count screens, calendered mesh screens, high squeegee pressures, high hardness squeegees, high squeegee angles and combinations thereof. Alone, or in combination with, a thinned ink layer, the printed cathode can be cured using reduced time hot plate processing, infrared processing, heated gas flow processing, or combinations thereof.

Abstract: A low-cost and efficient process producing improved organic electronic devices such as transistors that may be used in a variety of applications is described. The applications may include radio frequency identification (RFID) devices, displays and the like. In one embodiment, the improved process is implemented by flash annealing a substrate with an energy having wavelengths ranging from about 250 nm to about 1100 nm or higher. In this flash annealing process energy having wavelengths from about 250 nm to about 350 nm or higher is substantially prevented from irradiating the substrate.

Abstract: A display is disclosed. The display includes a plurality of pixels configured to emit light. The display also includes a plurality of pixel control circuits that are each configured to regulate emission of light from a pixel. The pixel control circuits each include one or more two-terminal switching devices that include an organic semiconductor.

Abstract: The present invention relates to an organic thin film transistor comprising a photocurable transparent inorganic/polymer composite layer as a gate insulator layer in which metal oxide nanoparticles are generated within a photocurable transparent polymer through sol-gel and photocuring reactions and whose permittivity is easily regulated; and a fabrication method thereof. Since the organic thin film transistor according to the present invention utilizes the photocurable transparent inorganic/polymer composite layer showing a significantly high and readily controllable permittivity as a gate insulator, it is capable of operating under low voltage conditions and has a high on/off current ratio due to low leakage current.

Abstract: A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge carriers of a first type; forming over the first electrode a first layer that is at least partially insoluble in a solvent by depositing a first semiconducting material that is free of cross-linkable vinyl or ethynyl groups and is, at the time of deposition, soluble in the solvent; forming a second layer in contact with the first layer and comprising a second semiconducting material by depositing a second semiconducting material from a solution in the solvent; and forming over the second layer a second electrode capable of injecting or accepting charge carriers of a second type wherein the first layer is rendered at least partially insoluble by one or more of heat, vacuum and ambient drying treatment following deposition of the first semiconducting material.

Abstract: An electronic device comprising a polymer of Formula (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar and Ar? represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.

Abstract: A method of fabricating an organic memory device is provided. In the method, a bottom electrode is formed on a substrate. A first surface treatment is performed on the bottom electrode to form a bottom surface treatment layer on a surface thereof. A polymer thin film is formed on the bottom surface treatment layer, and a top electrode is formed on the polymer thin film.

Abstract: The present invention provides an organic polymer light-emitting element material having a gold complex structure as a part of the side chain or crosslinking group as represented by formulae (5) and (8) and an organic polymer light-emitting element comprising layer(s) comprising the organic polymer light-emitting element material. The present invention provides a polymer-based phosphorescent material useful for a multicolor or white light-emitting organic EL device having high luminous efficiency and capable of large-area formation and mass production.

Abstract: An optical device comprising an anode, a cathode comprising barium, strontium or calcium, and a layer of organic semiconducting material between the anode and the cathode wherein a layer of hole transporting and electron blocking material is located between the anode and the layer of organic semiconducting material.

Abstract: To provide an organic thin film transistor including a pair of electrodes for allowing a current to flow through an organic semiconductor layer made of an organic semiconductor material, and a third electrode, wherein the organic semiconductor material is composed mainly of an arylamine polymer having a weight-average molecular weight (Mw) of 20,000 or more.

Abstract: An electrolyte composition for a dye sensitized solar cell according to one embodiment includes a first polymer or a non-volatile liquid compound having a weight average molecular weight of less than or equal to 500, a second polymer having a weight average molecular weight of more than or equal to 2000, inorganic nano-particles, and a redox derivative.

Abstract: An organic electronic device of the present invention includes a substrate, at least two electrodes formed on the substrate, a conductive organic thin film that is formed on the substrate and electrically connects the electrodes, and a coating film for coating at least a portion of the electrodes. The conductive organic thin film is a polymer of organic molecules containing a conjugated-bondable group, and one end of each of the organic molecules is chemically bonded to the surface of the substrate and the conjugated-bondable groups in the organic molecules are polymerized with other conjugated-bondable groups to form a conjugated bond chain. The coating film electrically connects the electrodes to the conductive organic thin film and achieves a smaller connection resistance than that in the case where the electrodes and the conductive organic thin film are connected directly.

Abstract: A method of forming an organic light emitting diode comprising the steps of: providing a substrate comprising a first electrode for injection of charge carriers of a first type; forming a charge transporting layer by depositing over the substrate a charge transporting material for transporting charge carriers of the first type, the charge transporting material being soluble in a solvent; treating the charge transporting layer to render it insoluble in the solvent; forming an electroluminescent layer by depositing onto the charge transporting layer a composition comprising the solvent, a phosphorescent material, and a host material; and depositing over the electroluminescent layer a second electrode for injection of charge carriers of a second type.

Abstract: A composition for the formation of an electric field programmable film, the composition comprising a matrix precursor composition or a dielectric matrix material, wherein the dielectric matrix material comprises an organic polymer and/or a inorganic oxide; and an electron donor and an electron acceptor of a type and in an amount effective to provide electric field programming. The films are of utility in data storage devices.

Abstract: Disclosed is a method of fabricating an organic light emitting device and an organic light emitting device fabricated using the same. The method comprises the steps of sequentially forming a cathode made of metal, at least one organic material layer including a light emitting layer and an anode on a substrate, and additionally comprises the step of forming a thin metal film on a native oxide layer that is spontaneously formed on the cathode before forming of the organic material layer.

Abstract: A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH?CH—C6H5, or a distyryl structure expressed by C6H5—CH?CH—C6H5—CH?CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.

Abstract: A layered structure can include laminated first and second substructures and an array with cell regions. The first substructure can include layered active circuitry, the second a top electrode layer. One or both substructure's surface that contacts the other can be on a polymer-containing layer, structured to generate free charge carriers and/or to transport charge carriers. A cell region of the array can include portions of each substructure; the cell region's portion of the first substructure can include a subregion of electrically conductive material and a subregion of semiconductive material, its portion of the second can include part of the top electrode layer. The layered structure can include one or more lamination artifacts on or in the polymer-containing layer; the lamination artifacts can include artifacts of contact pressure, or heat, or of surface shape, and the interface surface can be without vias.

Abstract: A method for fabricating a thin film pattern and a method for fabricating a flat panel display device using the same to form an organic material pattern by not using a photo process are disclosed. The method for fabricating the thin film pattern includes forming a first conductive thin film pattern on a substrate; forming a master mold provided with a second thin film pattern; coating an organic material on the master mold provided with the second thin film pattern; joining the substrate and the master mold to contact the first thin film pattern and a surface of the substrate with the organic material; hardening the organic material; separating the substrate and the master mold from each other to provide an organic thin film pattern having step coverage formed by the second thin film pattern on a substrate provided with the first thin film pattern.

Abstract: An organic semiconductor material is provided. The organic semiconductor material includes a polyacene derivative expressed by the following general formula (1): where each of R1 to R10 may be independently the same substituents or different substituents but all of R1, R4, R5, R6, R9 and R10 may never be hydrogen atoms at the same time, and where each of R1 to R10 is at least one kind of substituent selected from the group consisting of an aliphatic hydrocarbon group having a substituent and of which number of carbon atoms ranges of from 1 to 20, an aromatic hydrocarbon group having a substituent, a complex aromatic group having a substituent, a carboxyl group, a hydride, an ester group, a cyano group, a hydroxyl group, a halogen atom and a hydrogen atom. The organic semiconductor material can be dissolved into an organic solvent at low temperature (for example, room temperature) and is suitable for use with a coating process.

Abstract: A thin film transistor has a semiconducting layer comprising a semiconductor and a mixture enriched in metallic carbon nanotubes. The semiconducting layer has improved charge carrier mobility.

Abstract: Pi-conjugated organoboron polymers for use in thin-film organic polymer electronic devices. The polymers contain aromatic and or unsaturated repeat units and boron atoms. Pi-conjugated organoboron polymers which are end capped, derivatized with solubilizing groups or both exhibit improved solubility and handling properties beneficial for the formation of thin films useful for device fabrication. The vacant p-orbital of the boron atoms conjugate with the pi-conjugated orbital system of the aromatic or unsaturated monomer units extending the pi-conjugation length of the polymer across the boron atoms. The pi-conjugated organoboron polymers are electron-deficient and, therefore, exhibit n-type semiconducting properties, photoluminescence, and electroluminescence.

Abstract: An optoelectronic fiber and methods for forming such a fiber are disclosed. The fiber generally includes an electrically conductive fiber core, a first semiconducting layer substantially surrounding the fiber core, and a second semiconducting layer substantially surrounding the first semiconducting layer. The first and second semiconducting layers are of complementary types, i.e., one is p-type and the other is n-type. The fiber may be made, e.g., by electrospinning a material to form a fiber core; substantially surrounding the fiber with a first semiconducting material; and substantially surrounding the first semiconducting material with a second semiconducting material. Optoelectronic fibers can be fashioned into a web to provide a solar cell material or substantially transparent conductive material.

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: A method of fabricating an organic semiconductor device includes following steps. A gate conductive layer is formed on a substrate, and then a gate dielectric layer is formed. Next, patterned metal layers are formed on the gate dielectric layer beside the gate conductive layer. An electrode modified layer is then formed on the surface and the sidewall of each patterned metal layer, and the patterned metal layers and the electrode modified layers formed thereon serve as a source and a drain. Thereafter, an organic semiconductor layer is formed on the source and the drain and on a portion of the gate dielectric layer exposed between the source and the drain to be an active layer.

Abstract: A spirofluorene-based polymer which contains a spirofluorene structure as a basic unit and which is end-capped with functional moieties substituted by fluorine, and an organic electroluminescent device using an organic layer using the spirofluorene-based polymer. The organic electroluminescent device has improved efficiency, reduced driving voltage, and excellent thermal, optical and electrical stability.

Abstract: An aromatic graft polymer containing one or more kinds of repeating units represented by the following formula (1).

Abstract: To provide a display device with higher image quality and reliability or a large-sized display device with a large screen at low cost with high productivity. A function layer (such as a coloring layer or a pixel electrode layer) used in the display device is formed by discharging a liquid function-layer-forming material to an opening formed with a layer including a first organic compound which has a C—N bond or a C—O bond in the main chain as a base and a layer including a second organic compound as a partition. The fluorine density exhibiting liquid repellency to the liquid function-layer-forming material, which is attached to a surface of the layers including organic compounds, is controlled, whereby a liquid repellent region and a lyophilic region can be selectively formed.

Abstract: A photoelectric conversion element is provided and includes: a conductive thin layer; an organic photoelectric conversion layer including a compound represented by formula (I); and a transparent conductive thin layer, in this order: In the formula (I), X represents O, S or N—R10; Rx and Ry each independently represents a hydrogen atom or a substituent, at least one of Rx and Ry is an electron-withdrawing group, and Rx and Ry may be connected to each other to form a ring, provided that Rx and Ry do not represent a cyano group at the same time; R7 to R10 each independently represents a hydrogen atom or a substituent, and R8 and R9 may be connected to each other to form a ring; L represents a linking group comprising a conjugated bond; and D1 represents a group of atoms.

Abstract: The invention relates to a hybrid semiconductor material and to a device containing same. The hybrid semiconductor material of the invention comprises an organic semiconductor matrix in which semiconductor nano-objects grafted by organic entities are dispersed, the organic matrix comprising small semiconductor molecules and the said organic entities having an active electrical function similar to those of the said small semiconductor molecules. The hybrid semiconductor material of the invention has applications in the field of mass consumer electronics, in particular.

Abstract: The present invention provides a composite material for a light-emitting element including a high molecular compound having an arylamine skeleton and an inorganic compound showing an electron accepting property to the high molecular compound. The absorption spectrum of the composite material is different from absorption spectra of the high molecular compound and the inorganic compound which each form the composite material. In other words, a composite material having an absorption peak in a wavelength which is seen in the absorption spectra of neither the high molecular compound nor the inorganic compound forming the composite material is superior in carrier transporting and injecting properties and a favorable material. In addition, the composite material can be formed by a wet method such as a sol-gel method, it can be apply to the increase of substrate size easily in a manufacturing process and advantageous industrially.

Abstract: An electronic device including: a pair of electrodes; an organic semiconductor layer; and an organic film formed of organic compounds including nonconjugated organic compounds coupled to at least one of surfaces of the pair of electrodes.

Abstract: An electrolyte-gated field effect transistor is disclosed, the transistor comprising an electrolyte including a polymeric ionic liquid analogue. In a preferred embodiment, the transistor further comprises a source electrode, a drain electrode disposed so as to be separated from the source electrode, forming a gap between the source and drain electrodes, a semiconductor layer bridging the gap between the source and drain electrodes and thus forming a transistor channel, and a gate electrode positioned so as to be separated from the source electrode, the drain electrode and the semiconductor layer. In this embodiment, the electrolyte is disposed so as to contact at least a part of both the gate electrode and the semiconductor layer.

Abstract: A method is provided for modifying a poly(arylene vinylene) or poly(heteroarylene vinylene) precursor polymer having dithiocarbamate moieties by reacting it with an acid and further optionally reacting the acid-modified polymer with a nucleophillic agent. Also provided are novel polymers and copolymers bearing nucleophillic side groups which are useful as components of electronic devices, e.g. in the form of thin layers.

Abstract: The present invention has an object to provide an organic light emitting device array whose power source voltage is not raised. The difference in ionization potential between a host material and a hole transport layer and the difference in electron affinity between a host material and of an electron transport layer are set in a favorable range for all organic light emitting devices which emit light of different colors.

Abstract: In an organic electronic circuit, particularly a memory circuit with an organic ferroelectric or electret material the active material comprises fluorine atoms and consists of various organic materials. The active material is located between a first electrode and a second electrode. A cell with a capacitor-like structure is defined in the active material and can be accessed for an addressing operation via the first and the second electrode. At least one of these electrodes comprises a layer of chemically modified gold. In a passive matrix-addressable electronic device, particularly a ferroelectric or electret memory device, circuits of this kind with the active material as a ferroelectric or electret memory material form the elements of a matrix-addressable array and define the memory cells provided between first and second set of addressing electrodes. At least the electrodes of at least one of the sets then comprise at least a layer of gold.

Abstract: The present invention relates to a crosslinkable polymer composition which is useful for the preparation of semiconductive layers of electric cables, the polymer composition comprising (a) an unsaturated polyolefm having at least 0.15 vinyl groups/1000 carbon atoms and (b) carbon black.

Abstract: A device comprising a charge transfer channel, wherein the charge transfer channel comprises a composite material which comprises particles of a dielectric material with interstice voids between them which are partially or totally infilled by a semiconductor or conductor material.

Abstract: An organic semiconductor device includes a channel forming region including an organic semiconductor thin film which is composed of an organic semiconductor material having an oxidation or reduction mechanism in units of two-?-electrons and a two- or three-dimensional conduction path. It is thus possible to provide an organic semiconductor device including an organic semiconductor thin film based on an organic semiconductor thin film composed of an organic semiconductor material which can be dissolved in an organic solvent at a low temperature (e.g., room temperature) and is suitable for use in a coating process.

Abstract: A thin film transistor of the present invention is a thin film transistor (100) having a semiconductor layer (14), a source region (15) and a drain region (16) provided to be isolated from each other so as to mutually oppose the semiconductor layer. The semiconductor layer has ?-conjugated organic semiconductor molecules as its main component. The ?-conjugated organic semiconductor molecules are oriented so that ? orbitals substantially oppose each other and that the molecular axis of the main chains is oriented to be inclined with respect to a direction of electric field in a channel formed in the semiconductor layer.

Abstract: Organic light emitting devices (OLEDs) are provided. An exemplary OLED includes a substrate, a first electrode, a second electrode, and an organic layer between the first and second electrodes having a hole injection layer and an emissive layer. The emissive layer includes red, green and blue emissive layers. The organic layer further includes an auxiliary layer selected from a first auxiliary layer between the hole injection layer and the red emissive layer for adjusting the resonance cycle of red light, a second auxiliary layer between the hole injection layer and the green emissive layer for adjusting the resonance cycle of green light, and combinations thereof. The material of the auxiliary layer is different from the material of the hole injection layer. The organic light emitting device has low turn-on voltage, high current density, high luminance, high current efficiency, high power, long life-time, and excellent color purity.

Abstract: The present invention is related to a luminescent material generated by polymerization of a pyrromethene complex by glow discharge. The polymer material of the present invention exhibits semi-conductive properties and has a luminescence maximum in a spectrum region in the range of about 540 nm to about 585 nm with a half-width of the luminescence band in the range of about 55 nm to about 75 nm, a quantum yield of photoluminescence in the range of about 0.6 to about 0.8, and an electric conductivity at a temperature of about 20° C. in the range of about 1×10?10 S/cm to about 5×10?10 S/cm. The resultant polymer layer has a thickness in the range of about 0.01 ?m to about 10 ?m on a substrate placed between or on any of the electrodes. The starting pyrromethene complex may be a 1,3,5,7,8-pentamethyl-2,6-diethylpyrromethene difluoroborate complex (pyrromethene 567).

Abstract: Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.

Abstract: The present invention relates to a polymer film comprising a polymer having liquid crystallinity, having a number-average molecular weight in terms of polystyrene of 103 to 108 and having an electron mobility or hole mobility of 10?5 cm2/Vs or more, and having a film thickness in the range from 1 nm to 100 ?m. This polymer film can be used for various polymer film devices such as an organic transistor, organic solar battery, optical sensor, electrophotographic photoreceptor, spatial light modulator, photorefractive device and the like.