Abstract: A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, can be used as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside or on the surface thereof has been sintered such that a fractured section thereof exhibits intergranular fracture.

Abstract: According to the present invention, there is provided a holding mechanism of an object to be processed W, which comprises a relay switch to electrically disconnect a detection circuit having the function of detecting the stripped state of a protective film of a lower electrode and removing a residual charge from the direct-current component in a high-frequency power supply line from the power source supply line and which disconnects the detection circuit from the lower electrode in accordance with a process condition to prevent abnormal electric discharge and which electrically connects the detection circuit to the lower electrode to detect the stripped state (life) of the protective film of the lower electrode from the direct-current component in a plasma discharge or to remove a charge into the lower electrode or a residual charge during plasma processing under a process condition not causing abnormal electric discharge or at maintenance time.

Abstract: One object of the present invention is to provide a chucking apparatus and its production method that is capable of carrying out holding, alignment, transport and so forth without causing problems such as the generation of particles. In order to achieve this object, the present invention provides a chucking apparatus provided with a base in which protrusions or grooves are formed on one of its faces to form an irregular surface, and the apical surfaces of protrusions of the irregular surface serve as a chucking surface for chucking and holding a plate-shaped sample, wherein the apical and lateral surfaces of the above protrusions, and the bottom surfaces of the above indentations, are all polished.

Abstract: An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in an amount of not less than 0.5 mol % and not more than 2.0 mol %. Si content of the sintered body is not more than 80 ppm and an average particle diameter of aluminum nitride grains is not more than 3 &mgr;m. The aluminum nitride sintered body hardly peels aluminum nitride grains and exhibits high resistivity of at least 108 &OHgr;·cm even in a high temperature range of, for example, 300-500° C., as well as relatively high thermal conductivity.

Abstract: An electrostatic chucking device having a laminated structure formed by sequentially laminating a first insulation layer, an electrode layer, and a second insulation layer on a metal substrate. The first and second insulation layers are formed from polyimide films. At least one adhesion layer is provided between the metal substrate and the first insulation layer, and is a thermoplastic polyimide-based adhesive film having a film thickness of 5 to 50 &mgr;m.

Abstract: A plasma processing apparatus comprises: a body that comprises a vacuum processing chamber with a wafer stage on which a semiconductor wafer is held, a plasma producing unit for producing plasma within the vacuum chamber, and a high frequency source for applying a high frequency bias voltage to the wafer stage. A control unit controls various parameters of the body of the plasma processing apparatus. The control unit comprises a detecting unit for detecting the high frequency voltage or high frequency current applied to the wafer stage and for calculating a difference in phase between the high frequency voltage and the high frequency current, and a unit for obtaining a characteristic of the plasma or an electric characteristic of the plasma processing apparatus based on the detected high frequency voltage, the detected high frequency current, and the obtained difference in phase.

Abstract: The present invention relates to an electrostatic chuck in which unification of a dielectric layer and a heating and cooling flange is omitted, whereby production cost can be decreased, resulting in having adequate corrosion resistance especially for high temperature processes for semiconductor. The electrostatic chuck comprises a stage and a dielectric layer formed on an upper surface of the stage by thermal spraying, and the dielectric layer is made of magnesium oxide.

Abstract: A stage apparatus is a stage apparatus having a substrate holding unit which chucks and holds a substrate, and includes a flat surface having a recess where the substrate holding unit is to be mounted, and a fixing member which fixes a projection support provided to the substrate holding unit onto the flat surface. The substrate holding unit is supported by the fixing member while a distal end of the projection support is in contact with the recess of the flat surface and the remaining portion of the substrate holding unit is not in contact with the flat surface.

Abstract: A wafer space supporting apparatus is installed on a support chuck to relieve physical stress caused by thermal expansion or contraction of an object to be fabricated and adjusts itself to support the object to compensate for thermal expansion and contraction as well as minimize hard defects generated. The wafer space supporting apparatus includes a plurality of sliding pockets sunken into the supporting surface of the chuck, and sliding pads respectively floating-coupled in the sliding pockets such that they are spaced apart from the supporting surface so that they may adapt to expansions and contractions of an object to be fabricated, thereby preventing or minimizing any hard defects or physical stress.

Abstract: An electrostatic adsorption device has a dielectric layer, electrodes, a cooling member and an insulating adhesive. The dielectric layer is made of a ceramic dielectric material and has an adsorption face and a back face. The electrodes are provided on the back face of the dielectric layer and gaps are defined between the portions of the electrodes. The insulating adhesive is provided between the back face of the dielectric layer and the cooling member. The insulating adhesive covers the electrodes and the back face and is provided in the gaps.

Abstract: The objective of the present invention is to provide a process for manufacturing an electrostatic chuck which does not have a dispersion in chucking force depending on place and is capable of adsorbing a semiconductor wafer evenly. A process for manufacturing an electrostatic chuck according to the present invention comprises steps of: printing a conductor containing paste for an electrode on a green sheet which has a surface roughness, Rmax, of 200 &mgr;m or less; forming a lamination by stacking another green sheet or other green sheets on said green sheet; and then sintering said lamination.

Abstract: A process and apparatus is disclosed capable of removably adhering a semiconductor substrate to a substrate support in a sub-atmospheric environment using a plurality of individual fibers, each mounted at one end adjacent the substrate support, and each having a loose end. When the portions of the fiber adjacent the loose fiber ends are each brought into contact with the under surface of the substrate, Van der Waals forces are exerted between the substrate and the fibers to urge the substrate toward the underlying substrate support. In a preferred embodiment, the substrate and portions of the fiber adjacent the loose fiber ends are first vertically brought into physical contact with one another, and then a horizontal force is applied to horizontally move, with respect to one another, the substrate and the portions of the fibers adjacent the loose fiber ends.

Abstract: An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.

Abstract: An electrostatic chuck having either a conformal or non-confomal coating upon a surface for supporting a substrate. The coating reduces a number of particles generated by the electrostatic chuck.

Abstract: An electrostatic chuck comprising a ceramic chuck body having an adsorption face and an electrode for applying a potential to the adsorption face, the chuck body including a ceramic consisting mainly of MgO. The ceramic that consists mainly of MgO is doped with one or more additives selected from a group including TiC, TiO2, ZrO2, V2O5, Nb2O5, Ta2O5, Co3O4, Cr2O3, and NiO so that its electrical resistivity in a working temperature region ranges from 1×108 to 1×1012 &OHgr;·cm. This electrostatic chuck is highly resistant to a corrosive environment such as fluoride plasma.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: A platen for electrostatic wafer clamping apparatus comprising a platen body of dielectric material and grains of electrically conductive material diffused in the dielectric material so that the platen has a relatively large electrostatic capacitance due to the diffusion of the conductive grains with the result that the platen provides an increased clamping force regardless of humidity. In accordance with another aspect of the invention, the thickness of the platen body can be decreased by an amount sufficient to maintain a constant clamping force with reduced applied voltage, to eliminate any residual voltage on the platen and to increase the speed of wafer release. The grains of electrically conductive material are present in an amount of from about 2.5 percent to about 15.0 percent of the volume of the platen body, and the grains of electrically conductive material are selected from the group consisting of carbonated transition metals, nitrified transition metals and carbonated grains.

Abstract: The invention relates to the utilization of doped alumina for static charge sensitive applications, and to methods for making and using the same, e.g., for varying the electrical conductivity of alumina by doping with an appropriate transition metal oxide and subsequently heating to high temperatures in a reducing environment. This treatment allows the electrical conductivity to be tailored and thus provides a cost effective means for producing components with controlled resistivity.

Abstract: Disclosed is an electrostatic chuck comprising a ceramic dielectric layer having a surface for placing thereon a work that is to be held, and an electrode provided on a surface opposite to the surface of the ceramic dielectric layer for placing the work thereon, wherein: the placing surface of the ceramic dielectric layer is sectionalized into an outer peripheral region and a central region by gas injection grooves extending in a circumferential manner; the surface roughness Ra(o) of the outer peripheral region of the placing surface and the surface roughness Ra(i) ot the central region satisfy the following conditions: 0.6≦Ra(i)≦1.5 &mgr;m Ra(o)≦0.7 &mgr;m Ra(i)≧Ra(o)  and the outer peripheral region of the placing surface is higher than the inner peripheral region by not less than 0.6 &mgr;m.

Abstract: A semiconductor wafer support chuck having small diameter gas distribution ports for heat transfer gas. The diameter ports inhibit plasma ignition in heat transfer gas distribution channels. The ports are less than 20 mils in diameter less than 3 mm in length. The short length of the ports facilitates fabrication of multiple ports of very small diameter. The ports communicate with a gas distribution plenum integrated into the body of the chuck beneath a wafer support surface. The plenum has radial channels and a peripheral groove for distributing heat transfer gas to the wafer support surface.

Abstract: This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses optimum total thickness of the ESC stage, optimum volume ratio of composite which the moderation layer is made of, and an optimum range of the thermal expansion coefficient of the composite. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: An automatic discharge apparatus for an electrostatic chuck includes a high voltage determining part having an external high voltage determination value supplied thereto. A high voltage generating transformer, electrically connected to an output of the high voltage determining part, generates the high voltage to be supplied to an electrostatic chuck under control of the high voltage determining part. A high voltage controlling part, electrically connected to the high voltage generating transformer and the electrostatic chuck, controls the high voltage supplied from the high voltage generating transformer to the electrostatic chuck in response to an on/off state of power supplied by a power supply. A discharge circuit part electrically connected between the electrostatic chuck and the power supply, forcibly discharges residual voltage remaining in the electrostatic chuck in response to an off state of the power supply.

Abstract: According to the present invention, there is provided a holding mechanism of an object to be processed W, which comprises a relay switch to electrically disconnect a detection circuit having the function of detecting the stripped state of a protective film of a lower electrode and removing a residual charge from the direct-current component in a high-frequency power supply line from the power source supply line and which disconnects the detection circuit from the lower electrode in accordance with a process condition to prevent abnormal electric discharge and which electrically connects the detection circuit to the lower electrode to detect the stripped state (life) of the protective film of the lower electrode from the direct-current component in a plasma discharge or to remove a charge into the lower electrode or a residual charge during plasma processing under a process condition not causing abnormal electric discharge or at maintenance time.

Abstract: This invention relates generally to the reduction of particulate material generation by workpiece handling components. Reduced levels of scratching, abrasion, wear and particulate generation are achieved by improved smoothing and flattening of the surface and, in a preferred embodiment, through the application of an ion beam assisted diamond-like-carbon film coating deposition.

Abstract: A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc.

Abstract: One object of the present invention is to provide a chucking apparatus and its production method that is capable of carrying out holding, alignment, transport and so forth without causing problems such as the generation of particles. In order to achieve this object, the present invention provides a chucking apparatus provided with a base in which protrusions or grooves are formed on one of its faces to form an irregular surface, and the apical surfaces of protrusions of the irregular surface serve as a chucking surface for chucking and holding a plate-shaped sample, wherein the apical and lateral surfaces of the above protrusions, and the bottom surfaces of the above indentations, are all polished.

Abstract: In a vacuum processing apparatus for a semiconductor wafer, two intermediate dielectric plates 4A and 4B are provided on an upper surface of a cooling portion 31 provided with a coolant passageway 32, with an o-ring 35 therebetween, and a dielectric plate 5 is provided on the top thereof. Electrodes 41 and 51 are embedded in surface portions of each of these dielectric plates 4A, 4B, and 5, and heaters 42 and 52 are embedded in interior portions thereof. The intermediate dielectric plates 4A and 4B are linked together by electrostatic force, as are the intermediate dielectric plate 4B and the dielectric plate 5. Thus any gaps in a vacuum environment that are formed between adjacent components in these linkage regions are either eliminated or reduced.

Abstract: In a method for exhausting processing gases out of a dry etching apparatus, processing gases are introduced into a processing chamber of the dry etching apparatus and converted into a gas plasma to etch a semiconductor workpiece. After plasma etching the semiconductor workpiece, the gas plasma is centrally gathered under the semiconductor workpiece by a sucking force formed surrounding the bottom periphery of the semiconductor workpiece, and then, is exhausted. The semiconductor workpiece to be processed is placed on a chuck under which an exhausting means is arranged.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: Apparatus for retaining a workpiece in a semiconductor processing chamber and method for fabricating the same. In one embodiment, a method for fabricating the apparatus includes providing a controlled resistivity boron nitride (CRBN) plate. A conductive layer is disposed on a portion of a lower surface of the CRBN plate to form at least one chucking electrode. A layer of boron nitride powder is disposed on the conductive layer and the lower surface of the CRBN plate. The CRBN plate, the conductive layer, and the boron nitride powder are hot pressed together to form the apparatus. In a second embodiment, a conductive electrode layer is deposited on a portion of a lower surface of the CRBN plate. A layer of pyrolytic boron nitride is deposited on the conductive layer and the lower surface of the CRBN plate to form the apparatus.

Abstract: A method of substrate temperature control for plasma processing apparatus in which a substrate which is being held on a substrate holder in a process chamber is being processed, and He gas is passed through the gap between the substrate and the substrate mounting surface during the processing of the substrate, the substrate temperature is controlled by the thermal transfer characteristics of the gas and the substrate is cooled to the prescribed temperature, and the pressure of the He gas is preset by a pressure setting part 50a, the actual pressure is measured with a pressure gauge 49, and the gas flow rate is controlled in such a way that the measured pressure becomes equal to the set pressure by a pressure control valve 46. Furthermore, the substrate temperature controllability is assessed by monitoring the gas flow rate with a substrate temperature controllability assessment part 50b.

Abstract: A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

Abstract: An agitator comprises a main body for supporting rotatably a rotary shaft, a chuck for connecting detachably an agitating rod with the rotary shaft, starting means for starting the rotation of the rotary shaft when the chuck is covered with a chuck cover, and locking means for locking rotary shaft when the chuck is not covered with the chuck cover. The chuck cover is removed from the main body when an external force larger than a predetermined value is applied to the chuck cover. The starting means comprises a permanent magnet provided on the outer periphery of a disk hub and a magnetic sensor provided on the main body so that an output is generated to start the driving source only when the chuck cover is moved to cover the chuck. The locking means comprises a hole formed in the rotary shaft, an eccentric cam to be rotated by the chuck cover, and a lock pin which is moved by the eccentric cam so as to be inserted into the hole of the rotary shaft when the chuck is not covered with the chuck cover.

Abstract: An apparatus for holding a substrate on a support layer in a processing chamber. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. A device is provided for moving each lift pin relative to the support layer. A device is also provided for producing a plasma within the processing chamber.

Abstract: An aluminum nitride sintered body is provided. The aluminum nitride has a polycrystalline structure of aluminum nitride crystals having an average particle diameter in a range of 5 &mgr;m to 20 &mgr;m and cerium in a range of 0.01 wt % 1.0 wt %, when calculated as an oxide thereof. The aluminum nitride sintered body has a room temperature volume resistivity in a range of 1×108 &OHgr;·cm to 1×1012 &OHgr;·cm under the application of 500 V/mm, and a value of a in the I-V relational equation, I=kV&agr;, is in a range of 1.0 to 1.5, V being a voltage in a range of 100 V/mm to 1000 V/mm, I being a leak current when V is applied to said aluminum nitride body, k being a constant, and &agr; being a non-linear coefficient.

Abstract: A pin stop and method of implementation suitable for use lift pin assemblies used in semiconductor process environments is provided. The pin stop includes a pin shaft and a circular pin head with soft stop and hard stop features defined thereon. The soft stop feature is defined in a grove in the pin head surface and is configured to impact a stopping surface slowing movement of a lift pin assembly. The hard stop then impacts the stopping surface providing a constant, reliable and repeatable position of a wafer positioned on the lift pin assembly.

Abstract: A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.

Abstract: An edge ring clamping assembly wherein an edge ring is supported by an electrostatic edge ring chuck and a method of improving the temperature control of an edge ring in a plasma processing chamber. The edge ring can be made of a conductive material such as silicon or silicon carbide and temperature control of the edge ring can be enhanced by supplying heat transfer gas such as helium between opposed surfaces of the edge ring and the edge ring chuck.

Abstract: AC waveforms biasing of bead transporter chucks and their accumulated charge sensing circuits tailored for low resistivity substrates and beads where if traditional DC quasi-static biasing potentials were used, the bead attraction potentials of the chuck would undergo rapid RC decay and cause the bead transporter chuck to stop working. Methods for selecting AC waveforms are given, including those that maximize the time average of the bead attraction potential at the bead collection zone of the bead contact surface.

Abstract: An electrostatic chuck having an insulation layer includes a mount plane on which a wafer is mounted, an inner electrode provide in the insulation layer, and projecting portions protruded from the mount plane which include contact planes to be contacted to the wafer. A backside gas is flowed into a space defined by the mount plane, the projecting portions, and the wafer under such a condition that the wafer is attracted to the mount plane so as to maintain a temperature uniformity of the wafer. A total amount of areas of the contact planes of the projecting portions is not less than 5% and not more than 10% with respect to an area of the inner electrode, and heights of the projecting portions are not less than 5 &mgr;m and not more than 10 &mgr;m.

Abstract: The present invention provide an adhesive sheet for electrostatic chucking device having high heat resistance and to an electrostatic chucking device which causes little curvature of the ceramic board after application of heat and is excellent in heat resistance and adsorptity. The adhesive sheet of the present invention comprises a silicone resin elastic layer 11 and thermosetting adhesive layers 12 and 13 which are each laminated on the silicone resin elastic layer, wherein said thermosetting adhesive layers are composed of epoxy resin or phenol resin. The electrostatic chucking device of the present invention is produced by laminating an electrode and a ceramic layer having an adsorptive surface on a metal base in this order via the adhesive sheet of the present invention.

Abstract: A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.

Abstract: Within both a electrostatic chuck apparatus and a method for fabricating a substrate while employing a fabrication apparatus having assembled therein the electrostatic chuck apparatus there is employed: (1) an electrostatically energizable substrate plate sized to accommodate a substrate; and (2) an electrically conductive lift pin movably positionable with respect to the electrostatically energizable substrate plate such as to optionally contact and lift the substrate when positioned upon the electrostatically energizable substrate plate, further wherein the electrically conductive lift pin is connected to ground through a switch. Both the electrostatic chuck apparatus and the method provide for more efficient dechucking of the substrate positioned and electrostatically fixed upon the electrostatic chuck apparatus.

Abstract: An apparatus and a method for lifting a wafer off of an electrostatic chuck after wafer processing operations are provided. In a specific example, a wafer lifting mechanism for controlling the lifting of the wafer off of an electrostatic chuck at a completion of processing is defined. The wafer lifting mechanism includes a pin lifter yoke that is oriented below an electrostatic chuck. The pin lifter yoke has a set of pins connected thereto, and the set of pins are configured to traverse through the electrostatic chuck and contact a bottom surface of the wafer. A link is also provided and connected to the pin lifter yoke. The link is moveable so as to cause the pin lifter yoke and the set of pins to move within the electrostatic chuck and contact the bottom surface of the wafer, and once in contact with the bottom surface of the wafer, the set of pins are capable of lifting the wafer off of the electrostatic chuck.

Abstract: A plasma processing system has a susceptor, provided in a processing vessel, for supporting thereon a substrate. A process gas is supplied into the processing vessel to produce the plasma of the process gas. The susceptor has a dielectric film formed on a base, and a plurality of protrusions formed on the film. The protrusions of the susceptor are formed by thermal-spraying a ceramic onto the dielectric film via an aperture plate having a plurality of circular apertures.

Abstract: A driver bit holder (11) for releasably receiving a driver bit (10) and for minimising damage to the bit (10) and to a fastener that the bit (10) engages. The holder (11) has a main body (20) with a bore (21) at one end for releasably receiving the bit (10), a shank (30) extending from an opposite end of the body (20) and extending into a bore (34) at the opposite end of the body (20), wherein the shank (30) has an inner end (35) with a transverse cross sectional shape corresponding to the transverse cross sectional shape of the bore (34), and a rubber sleeve (37) extending about the inner end (35) and located between the inner end (35) and the bore (34).