Abstract: A table device for chucking a substrate includes a chucking unit including a porous body, and having a substrate chucking surface, and a conductive film which is disposed on the substrate chucking surface of the chucking unit, and which is grounded.

Abstract: A bit mounting device includes a holder that may be mounted to a spindle of the power tool or may be a part of the spindle. A bit push member is disposed within a bit receiving hole that is formed in the holder for receiving a tool bit. The movement of the operation member is transmitted to the bit push member via a transmission mechanism, so that the tool bit is pushed in a removing direction from the bit receiving hole by the bit push member.

Abstract: A dry etching step during the manufacturing of a substrate for a liquid crystal display (LCD) device is improved by placing the substrate at a predetermined distance away from the lower electrode to prevent damage of the substrate due to electrostatic formed therebetween. An insulating tape attached on the lower electrode provides electrostatic protection between the substrate and the lower electrode, so that the substrate is properly lifted off the lower electrode via the lifting pins of the lower electrode without electrostatic interference.

Abstract: An electrostatic chuck comprises a dielectric ceramic layer made of an alumina sintered body having a volume resistivity equal to or greater than about 1×1017?·cm at room temperature and a volume resistivity equal to or greater than about 1×1014?·cm at 300° C., and an electrode formed on one surface of the dielectric ceramic layer.

Abstract: A method and device for effecting automatic centering of an annular workpiece on a rotating surface having a rotational center involves arbitrarily positioning the workpiece on the slowly rotating surface, applying a support for the workpiece by way of spaced apart contact members that individually contact the workpiece and are synchronously movable in a guided reciprocating manner towards and away from the rotational center of the rotating surface. The contact members are gradually retracted away from the rotational center of the rotating surface until the workpiece is unaffected by the contact members during one revolution of the rotating surface so that the workpiece is centered, and the center of the workpiece coincides with the rotational center of the rotating surface. At least one of the contact members is provided with a mechanism for counteracting a friction force acting on the workpiece.

Abstract: A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.

Abstract: The electrostatic chuck 101 where pairs of electrodes 3a/3b, 4a/4b and 5a/5b to which voltages are applied are embedded in the main body 1, and where a substrate 110 is placed and held on the surface of the main body 1, includes a first electrode group constituted of one pair or more of electrodes 3a/3b arranged in a center region 41 inside the main body 1, and a second electrode group constituted of one pair or more of electrodes 4a/4b and 5a/5b arranged in outer peripheral portions 42 and 43 surrounding the center region 41.

Abstract: A Coulombic electrostatic chuck is disclosed which includes a substrate, a conductive layer overlying the substrate, and an arc elimination layer overlying the conductive layer. The electrostatic chuck further includes a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm.

Abstract: A binder is mixed to alumina powder with a purity of 99.5% or more (step S11), the mixture is granulated (step S12), resultant granule powder is formed with a die (step S13), and a formed compact is sintered in a hot-pressing manner (step S14).

Abstract: An exchanging device is for exchangeably holding a sensor, probe element or tool on a machine or on a machine part or a rotation-pivot unit on a machine or a machine part, preferably, a coordinate measuring apparatus. The exchanging device includes a take-up holder having a first bearing part and a counter piece (22) having a second bearing part corresponding to the first bearing part. A releasable clamping unit (42), for example, a magnetic clamping unit, is provided with which a clamping force is generated between the first and second bearing parts when the counter piece is accommodated on the take-up holder. A locking device having a first locking element (29) is provided on the take-up holder and a counter piece corresponding to the locking element (29) of the take-up holder is provided on the counter piece (22), for example, in the form of a slider (30). With the locking device, the counter piece can be mechanically coupled to the take-up holder in the state when it is taken up by the take-up holder.

Abstract: A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap or berline wall between the insert ring and the wafer support. In one embodiment, the convex inner surface is convexly-tapered. In another embodiment, the convex inner surface is convexly-curved. Throughout etching of multiple successive substrates on the wafer support, accumulations of polymer material on the inner surface of the insert ring are prevented or at least substantially reduced. Consequently, polymer peeling is eliminated or reduced and operational intervals for the processing chamber or system between periodic maintenance or cleanings, are prolonged.

Abstract: A composite material according to the present invention, is composed of SiC, SiO2, at least one out of Al and Si, with He leak rate of 1.3×10?10 Pa·m3/sec or below, thereby providing a composite material, which has a higher vacuum air-tightness, an excellent thermal conductivity, an adjustable coefficient of thermal expansion, small variation in strength and higher reliability, and a method for manufacturing the composite material, and a wafer holding member including the composite material.

Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage is determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage is used to accurately control the DC wafer clamping voltage.

Abstract: A spindle device to mount and rotate an object, including: a housing; a main shaft supported by the housing rotatably to the housing wherein the main shaft includes a through hole which goes through from an end to the other end thereof, and an opening of the through hole forms a mounting section to mount the object at the end, and an opening of the through hole forms a suction section at the other end; a connecter member disposed to cover-the outside of the other end and connected with the external negative-pressure source; and a bearing disposed between the circumference of the main shaft at other end and the connecter member covering the outside; wherein the object is suctioned onto the mounting section at the end with the external negative-pressure source through the through hole.

Abstract: In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.

Abstract: A detachable electrostatic chuck is capable of being attached to a pedestal in a process chamber. The chuck comprises an electrostatic puck having a ceramic body with an embedded electrode. The chuck also has a baseplate below the electrostatic puck with a lower surface which is bonded to a sealing assembly comprising a sealing plate and sealing ring. The sealing plate and ring are polished to form a gas-tight seal between the chuck and pedestal to prevent gas leakage from or into this region.

Abstract: A spin head includes a rotatable plate, first chucking pins and second chucking pins for supporting a edge portion of a substrate loaded on the plate, and a driving unit for selectively driving the first and second chucking pins. The driving unit includes a first magnet connected to the first chucking pin and disposed at a first height, a second magnet connected to the second chucking pin and disposed at a second height, and a driving magnet for driving the first and second magnets. The driving magnet is elevated by means of an elevating member to selectively apply a magnetic force to the first or second magnet and moves in the radius outside direction of the first or second chucking pin due to a magnetic force.

Abstract: A heat-transfer structure which can keep a consumable component at a temperature of 225° C. or less during etching of a substrate. The heat-transfer structure is disposed in a chamber where plasma processing is performed on a wafer as the substrate under a reduced pressure. The heat-transfer structure is comprised of a focus ring having an exposed surface exposed to plasma, a susceptor and an electrostatic chuck that cool the consumable component, and a heat-transfer sheet interposed between the focus ring and the electrostatic chuck and made of a gel-like material. The ratio of hardness of the heat-transfer sheet expressed in Asker C to thermal conductivity of the heat-transfer sheet expressed in W/m·K is less than 20.

Abstract: An aluminum nitride sintered body is provided, including a polycrystalline structure in which grain boundary fracture toughness KICgb is 1.6 MPa·m1/2 or more. The grain boundary fracture toughness KICgb is determined by the equation KICgb=KIC·cos2(?·PIF/200), wherein KIC is fracture toughness (MPa·m1/2), and PIF is a percentage of the intergranular fracture (%).

Abstract: A process and apparatus for centering accurately and speedy a workpiece on a magnet chuck mounted on a work spindle. A pair of action pads spaced away from one another comes into engagement with the workpiece attracted to the work spindle, thereby performing the centering operation. The action pads are mounted on a support plate that can freely turn on a fulcrum. As the fulcrum makes head towards a rotational center of the magnet chuck, the action pads comes into abutment in a rocking manner against the workpiece that is held at off-center relation in the chuck, thereby compensating the off-center relation to keep a center of the workpiece in alignment with the rotational center of the chuck.

Abstract: The present invention provides a method and an apparatus for carrying at least one substrate for plasma processing. The method and apparatus comprising a carrier for transporting the substrate, that is located unbonded on the carrier, onto a substrate support within a plasma system for plasma processing. An electrostatic clamp, that is coupled to the substrate support, electrostatically secures the substrate to the substrate support through the carrier during plasma processing.

Abstract: A plasma apparatus capable of adaptive impedance matching comprises a plasma reactor which can produce plasma to proceed with CVD (chemical vapor deposition) process, a bi-polar electrostatic chuck which locates inside the plasma reactor and is used to support and secure a wafer, an alternating current bias power supply which connects to the bi-polar electrostatic chuck supplies the voltage potential bias for ion-bombardment from plasma, and an impedance-matching circuit which connects the alternating current bias power supply to the bi-polar electrostatic chuck is used to balance the inner electrode power output and the outer electrode power output of the bi-polar electrostatic chuck.

Abstract: An object of the present invention is to provide a joined structure effective for preventing crack formation after thermal cycles. The joined structure has a ceramic member 1, a metal member 4 to be joined, and a metal fixed member 3 fixed to the ceramic member 1 and having an exposed face 3b exposed along the joining face 1d of the ceramic member 1. A joining layer 7 is provided between the ceramic member 1 and the metal member 4 and between the exposed face 3b of the fixed member 3 and the metal member 4. The joining layer 7 has thicker and thinner portions 7a and 7b. Alternatively, the joining layer 7 has a maximum thickness of 0.15 mm or more.

Abstract: An electrostatic chuck is provided which includes a circular ceramic plate having an electrostatic attractive electrode, a mounting surface for supporting a waferhich is formed on one of the main surfaces of the circular ceramic plate, an annular gas groove formed on the periphery of the mounting surface in the form of concentric circles with a gas inlet communicating with the annular gas groove, and a circular gas recess formed inside the ceramic plate and surrounded by the annular gas groove with a gas inlet communicating with the circular gas recess, wherein the annular gas groove and the circular gas recess are independently separated from each other by an annular rib protrusion, with a plurality of dotted protrusions being formed within both the annular gas groove and the circular gas recess.

Abstract: A stage has a plate, a first seal surface, a stem, a second seal surface, a cover, a conductor and a flow path. A heater is embedded in the plate. A terminal for supplying power to the heater is exposed at one surface of the plate. The first seal surface is provided on the plate, shaped like a ring and surrounds the terminal. The stem is shaped like a hollow cylinder, surrounds the terminal and supports the plate. The second seal surface is provided on that end of the stem which supports the plate, and is shaped like a ring. The cover closes an open end of the stem, which is opposite to the end which supports the plate. The conductor passes through the cover into the stem and is connected to the terminal. The flow path is provided in the cover, for supplying inert gas into the stem at a pressure equal to or higher than the pressure of process gas present outside the stem.

Abstract: This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer, which have internal stress directed oppositely to that of the chucking electrode. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

Abstract: A method for removing a substrate that is attached to a bipolar electrostatic chuck (ESC) by application of a bipolar ESC voltage is provided which includes discontinuing the bipolar ESC voltage after processing a current substrate, and determining a monopolar component error of the processing. The method also includes correcting the monopolar component error for a subsequent substrate.

Abstract: A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned therebetween for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest proportional content among the aforementioned three types of components in the joining layer (8).

Abstract: A method and system for monitoring and/or controlling the conditions of a wafer on an electrostatic chuck during plasma processing. The method and system include utilizing backflow gas pressure and DC clamping voltage as control variables to adjust the wafer temperature based upon impedance measurements determined by RF sensors located in the electrostatic chuck RF feed line. The method and system further include utilizing the clamping status of the wafer on the electrostatic chuck to monitor impedance during the plasma process.

Abstract: Disclosed is an electrostatic chuck and system for maintaining a device flat within the electrostatic chuck. The electrostatic chuck has a plate, height adjustment mechanisms connected to the plate; and electrostatic chuck pins connected to the height adjustment mechanisms. The system provides a measurement tool adapted to measure the flatness of the device held by the electrostatic chuck pins and a computer connected to the height adjustment mechanisms and the measurement tool. The computer adjusts the flatness of the device by adjusting the height adjustment mechanisms based on feedback from the measurement tool. The computer is adapted to change the shape of the device to conform to a pre-existing standard.

Abstract: This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses optimum total thickness of the ESC stage, optimum volume ratio of composite which the moderation layer is made of, and an optimum range of the thermal expansion coefficient of the composite. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

Abstract: A lithographic projection apparatus includes a radiation system for providing a beam of radiation, and a substrate holder. The substrate holder includes a plurality of protrusions for providing a substantially flat plane of support for supporting a substrate in a beam path of the beam of radiation, at least one clamping electrode for generating an electric field for clamping the substrate against the substrate holder, and a peripheral supporting edge arranged to contact the substrate. The electrode extends beyond the peripheral supporting edge for providing a torsion load to level the substrate near the edges of the substrate.

Abstract: An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurality of lift pins in alignment with the channels, and a mechanism for engaging the lift pins in a loading position of the workpiece, a clamping position of the workpiece so that desired semiconductor processes may be performed to the workpiece, and a lift off position for removing the workpiece from the wafer platen after the semiconductor processes are completed. The mechanism places the lift pins below the surface of the wafer platen in the load position and then raises the lift pins to a first predetermined distance above the surface of the wafer platen in the clamp position such that the first predetermined distance allows the workpiece to be clamped to the wafer platen.

Abstract: An electrostatic gripper for moving wafers includes bipolar electrodes with an insulating layer of zirconium oxide, which are positioned on a circuit board. The gripper is produced by a pressing process and can be operated with a DC voltage of less than 900 V. As a result, heating of the wafer is almost completely prevented even under a vacuum.

Abstract: A ceramic sintered body comprising from 90 to 99.8% by volume of cordierite and from 0.2 to 10% by volume of mullite based on 100% by weight of a total sum of the contents of the cordierite and the mullite, and having a density of 2.48 g/cm3 or more.

Abstract: The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.

Abstract: Susceptor designs are provided for controlling damage to wafers, particularly during cold wafer drops-off on a hot susceptor. The designs include axisymmetric grid designs, such that thermal gradients are symmetrical in the circumferential (?) direction and the same traversing any particular radial line. The grids are preferably arcuate and each have the same surface area. In one embodiment an outer zone is asymmetrically designed to induce predictable wafer curling in a saddle shape.

Abstract: The present invention provides an apparatus for supporting a wafer in a semiconductor process. The apparatus includes an electrostatic chuck, a focus ring and a conductive material. The electrostatic chuck has a first fillister in its periphery. When a DC power is applied to the electrostatic chuck, the wafer is attached tightly to the electrostatic chuck by electromagnetic force. The focus ring has a second fillister opposite to the first fillister, and the focus ring is fixed on the periphery of the electrostatic chuck. The conductive material is located below the focus ring, and the conductive material is moving between the first fillister and the second fillister by a drive apparatus. When the conductive material is moving close to the focus ring in semiconductor etching process, it can improve the etching uniformity of the wafer periphery.

Abstract: A supporting structure is provided, including a ceramic susceptor to be heated and having a mounting face and a back face. A ceramic supporting member is joined with the back face of the susceptor. The ceramic supporting member has an outer wall surface, a joining face joined with the susceptor and an end face opposing the joining face. A curved part is formed between the outer wall surface and back face, and has a radius of curvature R in a range of 4 mm to 25 mm in the longitudinal direction of the ceramic supporting member.

Abstract: A susceptor supporting construction has a susceptor for heating a member to be processed and a supporting member, in which an inner space is arranged, connected to the susceptor. A chamber having an opening is connected to the supporting member, the opening of the chamber is communicated with the inner space of the supporting member, and the inner space of the supporting member is sealed in an airtight manner with respect to an inner space of the chamber. The supporting member further has a tubular main portion, a diameter extending portion arranged at an end portion thereof to which the susceptor is faced, and one or more continuous round portions arranged between the main portion and the diameter extending portion, when viewed by an outer profile of a longitudinal section of the supporting member.

Abstract: An electrostatic chuck for preventing warpage of a ceramic layer and cooling gas leakage while providing enhanced electrostatic attraction and an improved detachment performance and its manufacturing method is disclosed. The chuck comprises at least one electrode (90, 91, 92) located in the middle of the ceramic layer (80) in its thickness direction, a cooling gas channel (81) is formed on a surface of the ceramic layer within an outer edge of the electrode and above the electrode, wherein the electrode extends beyond the cooling gas channel. Preferably the electrodes are shaped in the form of two interlocked structures comprising multiple interconnected C-shaped ring portion (91c, 92c).

Abstract: An electrostatic chuck is provided which includes a ceramic body comprising aluminum nitride (AlN), and at least one electrode in the ceramic body. According to a particular feature of this embodiment, the aluminum nitride has a resistivity ratio ?10V/?500V less than about 5. In this regard, ?10V represents the resistivity of the electrostatic chuck at 10 applied volts while ?500V represents the resistivity of the AlN material at 500 applied volts.

Abstract: A supporting structure of a ceramic susceptor is provided, including a ceramic susceptor to be heated having a mounting face and a back face, and a ceramic supporting member joined with the back face of the susceptor. The supporting member has an outer wall surface, and a continuous and integral curved part formed between the outer wall surface and the back face of the susceptor. The curved part has a radius of curvature “R” in a range of 4 mm to 25 mm in the longitudinal direction of the supporting member, and a minimum wall thickness “t” in a range of 1 mm to 15 mm.

Abstract: A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.

Abstract: An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 ?·cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.

Abstract: A modular lift-pin assembly includes a lift-pin having a distal end, a connector, and an actuator pin. The connector includes an actuator end having a plurality of catch fingers disposed around the actuator end. Each of the plurality of catch fingers includes a lip extending radially inwards. A lift-pin end is coupled to the distal end of the lift-pin, and the actuator pin is coupled to the actuator end of the connector.

Abstract: The placement of a wafer can be performed with good positional precision, and the positioning of wafer clamps during maintenance is facilitated. A tapered recess is formed in that portion of the wafer support on which a wafer is placed. When a wafer is placed in the recess, the sloped surface inside this recess comes into contact with the edge of the wafer from beneath the wafer. The wafer is supported in a specific attitude by the sloped surface inside this recess.

Abstract: Substrates such as silicon wafers, flat panel displays, and hard disk drive head substrates are electrostatically gripped using power derived from a physically separated source. Noncontacting coupling permits operation in vacuum as a result of its efficient energy conversion. Bidirectional communications between a controller and the remote gripper electronics along its power coupling lines is enabled. Inclusion of a communications link allows monitoring of system status and full control over the substrate sensing, grip, and release processes. The system of the present invention provides freedom from rf bias filtering considerations, and enables installation of grippers on robot arms without stretching, bending, or sliding electrical connections.

Abstract: An apparatus for manufacturing a semiconductor device includes a chamber, upper and lower electrodes spacing apart and facing each other in the chamber, the upper and lower electrodes supplied with high frequency power to form plasma, an electrostatic chuck on the lower electrode and settling a substrate thereon, a chuck base between the electrostatic chuck and the lower electrode, and protecting the electrostatic chuck, and a helium line supplying helium gas to a gap between the substrate and the electrostatic chuck, the helium line filled with a plurality of fine insulating balls.

Abstract: A method and system of holding a substrate to decrease foreign substances on the back surface thereof. The substrate holding system includes a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface thereof to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.