Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract: Substrate support apparatus and methods are disclosed. Motion of a substrate chuck relative to a stage mirror may be dynamically compensated by sensing a displacement of the substrate chuck relative to the stage mirror and coupling a signal proportional to the displacement in one or more feedback loops with Z stage actuators and/or XY stage actuators coupled to the stage mirror. Alternatively, a substrate support apparatus may include a Z stage plate a stage mirror, one or more actuators attached to the Z stage plate, and a substrate chuck mounted to the stage mirror with constraints on six degrees of freedom of movement of the substrate chuck. The actuators impart movement to the Z stage in a Z direction as the Z stage plate is scanned in a plane perpendicular to the Z direction. The actuators may include force flexures having a base portion attached to the Z stage plate and a cantilever portion extending in a lateral direction from the base portion.

Abstract: A substrate supportingstructure (50) for semiconductor processing, comprising a mounting table (51) for placing a processed substrate (W) disposed in a processing chamber (20), wherein temperature control spaces (507) for storing the fluid used as a heat exchange medium are formed in the mounting table (51), a conductive transmission path (502) is disposed to lead a high frequency power to the mounting table (51), and flow channels (505, 506) feeding or discharging the heat exchange medium fluid to or from the temperature control spaces (507) are formed in the transmission path (502).

Abstract: A substrate support has a support structure and a coating on the support structure having a carbon-hydrogen network. The coating has a contact surface having a coefficient of friction of less than about 0.3 and a hardness of at least about 8 GPa. The contact surface of the coating is capable of reducing abrasion and contamination of a substrate that contacts the contact surface. In one version, the support structure has a dielectric covering an electrode. A plurality of mesas on the dielectric have a coating with the contact surface thereon.

Abstract: A chuck includes a driving element, a sleeve movably installed on the driving element and a ring fit in the socket. The driving element includes a socket for receiving a bit, a shank extended from and a shoulder formed between the socket and the shank. The sleeve includes a shoulder formed on an internal side for contact with the shoulder of the driving element for avoiding detachment thereof from the driving element in a direction. The restraint is fit in the socket for avoiding detachment of the sleeve from the driving element in an opposite direction.

Abstract: An electrostatic clamp, which more effectively removes built up charge from a substrate prior to and during removal, is disclosed. Currently, the lift pins and ground pins are the only mechanisms used to remove charge from the substrate after implantation. The present discloses describes a clamp having one of more additional low resistance paths to ground. These additional conduits allow built up charge to be dissipated prior to and during the removal of the substrate from the clamp. By providing sufficient charge drainage from the backside surface of the substrate 114, the problem whereby the substrate sticks to the clamp can be reduced. This results in a corresponding reduction in substrate breakage.

Abstract: A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. An electrostatic chuck (ESC) retains the substrate. A backside gas increases thermal coupling between the substrate and the ESC. The ESC is cooled via a coolant flowing through a coolant plate and heated via a resistive heater. Various arrangements are disclosed.

Abstract: Provided is a substrate dechucking system of a plasma processing chamber adapted to remove a substrate from an ESC with reduction in voltage potential spike during dechucking of the substrate.

Abstract: A detachable screwdriver assembly has a handle, a connecting tube, a workpiece. The handle is rubber or plastic. The connecting tube is mounted in the handle and has a tool mount. The workpiece is a mounting shaft. The mounting shaft is detachably mounted in the tool mount of the connecting tube and has a mounting end, a tool slot, a chuck and a tool head. The mounting end of the mounting shaft protrudes from the tool mount of the connecting tube. The tool slot is formed in the mounting end. A chuck is slidably mounted around the mounting end. The tool head is detachably mounted in the tool slot and is held by the chuck.

Abstract: The invention describes a hand power tool with a drive spindle and an integrated tool holder. The drive spindle can be connected to the tool holder in a rotationally fixed and undetachable manner, and the tool holder has at least one magnet. The drive spindle is connected to the tool holder such that at least one first section of the drive spindle is permanently connected to the tool holder and at least one second section of the drive spindle is present which is at least as long as the first section.

Abstract: A plasma processing system is disclosed. The plasma processing system may include an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support a wafer. The ESC may include a positive terminal (+ESC) for providing a first force to the wafer and a negative terminal (?ESC) for providing a second force to the wafer. The plasma processing system may also include a first trans-impedance amplifier (TIA) and a second TIA configured to measure a first set of voltages for calculating a value of a positive load current applied to the positive terminal. The plasma processing system may also include a third TIA and a fourth TIA configured to measure a second set of voltages for calculating a value of a negative load current applied to the negative terminal.

Abstract: An aspect of the present invention is drawn to a device for use with an electrostatic chuck having a top surface and a bottom surface, the top surface being separated from the bottom surface by a width, the electrostatic chuck additionally having a hole therein, the hole having a first width at the top surface and having a second width at the bottom surface, the first width being less than the second width, the top surface being capable of having wafer disposed thereon. The device includes a pin, a shaft, a neck portion and an outer housing portion. The pin has a pin width less than the first width. The shaft has a pin-holding portion, an end portion and a central portion disposed between the pin-holding portion and the end portion. The central portion has a first bearing portion. The outer housing portion has a first end and a second end and includes a second bearing portion. The shaft is disposed within the outer housing portion and is moveable relative to the outer housing portion.

Abstract: A substrate temperature control fixing apparatus comprises an electrostatic chuck which includes a base body and adsorbs and holds an adsorbing target mounted on one of surfaces of the base body, a base plate which supports the electrostatic chuck, and a bank portion provided on an outer periphery of one of surfaces of the base plate which is opposed to the other of the surfaces of the base body.

Abstract: Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content ? D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

Abstract: The invention relates to an installation, in particular a vacuum processing installation for processing a substrate (130), in particular a semiconductor wafer, comprising a processing station. Said installation comprises a frame (110), to which is clamped a carrier (120), for holding and/or transporting the substrate (130), whereby the latter (130) can be fastened by its entire surface to said carrier (120). The processing station preferably comprises a chuck electrode (140) with a flat outer surface (141) and the carrier (120) can be positioned parallel and adjacent to said outer surface (141) of the chuck electrode (140). The carrier is composed in particular of a non-conductive dielectric material and is provided on one side with a conductive layer (122), in such a way that the chuck electrode (140) and the carrier (120) form an electrostatic chuck.

Abstract: A sample holding tool is provided with a base plate, a plurality of convex portions formed on the base plate so as to stick out from the upper face thereof; and at least one holding plate having a plurality of curved face portions corresponding to the convex portions, with a lower face concave portion of each of the curved face portions being made in contact with the tip portion of each of the convex portions, so that a sample is supported on the upper face convex portion of each of the curved face portions; thus, since the sample is supported by the curved face portion of the holding plate, the contact area to the sample is made very small so that it becomes possible to greatly reduce pointed peak portions, scratches and the like at contact portions between the sample and the curved face portions. Consequently, generation of particles due to abrasion of the sample can be reduced and the particles are reduced from intruding into scratches and voids and occasionally readhering to the sample.

Abstract: The present invention relates to a device for tensioning or de-tensioning tools, having a tool shaft in a tool chuck which has a sheath section open on the free end thereof and which is made of electrically conductive material, for receiving the tool shaft in a friction connection, having an induction coil which surrounds the sheath section of the tool chuck, to which preferably high-frequency alternating current can be applied, and which is designed as a ring or cylinder coil, wherein the device has at least one channel running between the inner peripheral surface of the induction coil and the sheath section of the tool chuck, through which flows a cooling agent which cools the sheath section of the tool chuck.

Abstract: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

Abstract: Electrostatic chucks and methods of manufacturing the same are provided herein. In some embodiments, an electrostatic chuck comprises an electrically conductive body having one or more channels formed in an upper surface thereof; a plate positioned within the one or more channels to define one or more plenums between the body and the plate, wherein the surfaces of the plenum are anodized; one or more fluid passages disposed in the plate and fluidly coupling the one or more plenums to the upper surface of the body, wherein the surfaces of the fluid passages are electrically insulated; and a dielectric layer disposed over the upper surface of the body and the plate, wherein the dielectric layer forms a support surface for a substrate to be disposed thereon.

Abstract: An electrostatic chuck is capable of attachment to a pedestal in a process chamber. The chuck has an electrostatic puck comprises a ceramic body with an embedded electrode. The ceramic body has a substrate support surface with an annular periphery. The chuck also has a base plate below the electrostatic puck that is a composite of a ceramic material and a metal. The base plate has an annular flange extending beyond the periphery of the ceramic body. The base plate and electrostatic puck can be supported by a support pedestal having a housing and an annular ledge that extends outwardly from the housing to attach to the annular flange of the base plate. A heat transfer plate having an embedded heat transfer fluid channel can also be provided.

Abstract: A clockable device for use with an electrostatic chuck configured to hold a substrate in a plasma environment is disclosed. The clockable device comprises a first portion of the electrostatic chuck having at least one face with variable thermal contact areas located thereon. A second portion of the electrostatic chuck has at least one face with variable thermal contact areas located thereon. The at least one face of the second portion is configured to be placed in thermal contact with the at least one face of the first portion to control a thermal gradient across a face of the substrate.

Abstract: Provided is a power feeding structure of an electrostatic chuck including a lower insulation layer, an electrode layer and a surface insulation dielectric layer formed on an upper surface side of a metal substrate in order from the metal substrate, in which the lower insulation layer, the electrode layer and the surface insulation dielectric layer are not cracked easily.

Abstract: A tool retaining device includes a housing having an engaging hole and having a chamber for slidably receiving a tool stem, the tool stem includes a socket opening for receiving a tool member which is also slidably engaged in the engaging hole of the housing, for allowing the tool member to be rotated by either the tool stem or the housing. The tool member may also be moved relative to the housing for changeably coupling tool members or tool bits having different lengths, and may be selectively moved into the housing, for allowing another tool element to be selectively engaged with the engaging hole of the housing when the tool member is moved into the housing.

Abstract: An electrostatic chuck has an electrode embedded in a dielectric which is mounted on a pedestal. The dielectric has a contact surface with an average surface roughness of less than about 0.5 ?m, a surface peak waviness of less than about 0.12 ?m, and a surface peak waviness material ratio of greater than about 20%. The surface texture can be formed by lapping the dielectric surface with a slurry of abrasive particles.

Abstract: A disclosed device for use with an electrostatic chuck configured to hold a substrate in a plasma environment comprises an edge ring configured to be placed either in contact with portions of only a ceramic top piece, a base plate, or coupled to the base plate through a plurality of pins and pin slots. The edge ring is further configured to be concentric with the ceramic top piece. In one embodiment, the edge ring includes an inner edge having an edge step arranged to provide mechanical coupling between the edge ring and the outer periphery of the ceramic top piece. The edge ring further includes an outer edge and a flat portion located between the inner edge and the outer edge. The flat portion is arranged to be both horizontal when the edge ring is placed around the outer periphery of the ceramic top piece and parallel to the substrate.

Abstract: An apparatus for increasing electric conductivity to a wafer substrate when exposures to electron beam irradiation is disclosed. More specifically, a more free mechanical contact between a wafer and electric contact pins (within an electrostatic chuck) is provided to significantly reduce the scratch and damage on the wafer backside.

Abstract: A substrate holding apparatus comprises a substrate holding mechanism configured to hold a substrate; a heating mechanism; and a heat-conductive member which is interposed between the substrate holding mechanism and the heating mechanism to be in contact therewith and conducts heat generated by the heating mechanism to the substrate holding mechanism, wherein the heat-conductive member has a recessed section that opens to the substrate.

Abstract: Apparatus and methods for guiding one or more tools are provided. In at least one specific embodiment, the apparatus for guiding one or more tools can include an elongated member. The elongated member can have one or more switchable magnets disposed thereon.

Abstract: The electrostatic chuck includes a base including an aluminum nitride-containing member; a dielectric layer formed on the base including a member having a volume resistivity of at least 1×1015 ?·cm at a temperature range of about 25° C. to about 300° C. and including 2 to 5% by mass of yttrium oxide, 2 to 5% by mass of ytterbium oxide, and a balance of aluminum nitride based on the total mass of the dielectric layer; and an electrode embedded under the dielectric layer so as to be positioned between the dielectric layer and the base, configured to generate an electrostatic absorption force.

Abstract: An electrostatic chuck of a stack structure includes a metal layer interposed between insulating layers and a groove formed at a peripheral portion of the electrostatic chuck to have a width gradually increasing toward an outside, the groove being covered with a thermally sprayed insulating film. The thermally sprayed film covers at least a portion of the metal layer exposed at an inside of the groove such that the thermally sprayed film does not protrude from the groove.

Abstract: An electrostatic chuck includes (a) a cooling device serving as an RF electrode, including a gas supply port penetrating through the cooling device, the gas supply port extending from one main surface to the other main surface, and a main counter bore portion having a diameter larger than that of the gas supply port, the main counter bore portion provided in an opening of the gas supply port; (b) an arc prevention member buried in the main counter bore portion and made of an insulating member, wherein a gas path is provided, the gas path is configured to communicate with the gas supply port; and (c) an electrostatic chuck body arranged on the cooling device, defining a work mounting surface on a top surface of the electrostatic chuck body, provided with a pore in communication with the gas supply port via the gas path.

Abstract: A detachable electrostatic chuck is capable of being attached to a pedestal in a process chamber. The chuck comprises an electrostatic puck having a ceramic body with an embedded electrode. The chuck also has a baseplate below the electrostatic puck with a lower surface which is bonded to a sealing assembly comprising a sealing plate and sealing ring. The sealing plate and ring are polished to form a gas-tight seal between the chuck and pedestal to prevent gas leakage from or into this region.

Abstract: An electrostatic chuck structure according to example embodiments of the present invention may include at least one specific region of a conductor having a thickness relatively smaller than those of other regions, at least one specific region of a dielectric having a thickness relatively larger than those of other regions, or at least one specific region of a conductor having a thickness relatively smaller than those of other regions and at least one specific region of a dielectric having a thickness relatively larger than those of other regions. Therefore, etching rate and CD uniformity can be improved during a semiconductor manufacturing process.

Abstract: A tool connecting device includes a mandrel having a non-circular engaging hole for receiving a tool member, and having an outer peripheral recess for forming a peripheral shoulder, and a sleeve slidably engaged onto the mandrel and having a retaining ring frictionally engaged in the sleeve for slidably engaging with the peripheral recess of the mandrel and for limiting the sleeve to slide relative to the mandrel, the retaining ring is engageable with the peripheral shoulder of the mandrel for preventing the sleeve from being disengaged from the mandrel, and the tool member is extendible out of the sleeve for engaging with a fastener. The sleeve may limit the tool member to extend out of the sleeve.

Abstract: A manufacturing method for a sintered body having a metallic member buried therein is provided, and includes forming an alumina sintered body, forming a metallic member by printing a printing paste including a refractory metal on the alumina sintered body, forming a green alumina compact on the metallic member, and sintering the alumina compact, the metallic member, and the alumina sintered body or the alumina presintered body.

Abstract: A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

Abstract: The susceptor of a plasma treating device, or the electrostatic chuck of a substrate table, is formed by ceramic thermal spray method. A thermally sprayed ceramic layer is pore-sealed by methacrylic resin. Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the thermally sprayed ceramic layer and then is cured to thereby fill pores between ceramic particles in the thermally sprayed ceramic layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

Abstract: An exchanging device is for exchangeably holding a sensor, probe element or tool on a machine or on a machine part or a rotation-pivot unit on a machine or a machine part, preferably, a coordinate measuring apparatus. The exchanging device includes a take-up holder having a first bearing part and a counter piece (22) having a second bearing part corresponding to the first bearing part. A releasable clamping unit (42), for example, a magnetic clamping unit, is provided with which a clamping force is generated between the first and second bearing parts when the counter piece is accommodated on the take-up holder. A locking device having a first locking element (29) is provided on the take-up holder and a counter piece corresponding to the locking element (29) of the take-up holder is provided on the counter piece (22), for example, in the form of a slider (30). With the locking device, the counter piece can be mechanically coupled to the take-up holder in the state when it is taken up by the take-up holder.

Abstract: A device that allows the use of tool- and drill-bits in conjunction with a magnetic chuck comprises ferromagnetic material or a permanent magnet that is attached to the bit.

Abstract: The inventive device comprises a tool holder, which can be displaced in an x-direction, in a y-direction that is perpendicular thereto, and in a z-direction that is perpendicular to both the x-direction and the y-direction, and which can rotate about the z-direction A solid matter dosing head, provided as a tool, is automatically attached in a removable manner to the tool holder by means of a permanent magnet. The tool can be easily exchanged for another tool due to this automatic removable attachment of said tool to the tool holder involving the use of a permanent magnet.

Abstract: A plurality of protruded portions is formed through embossing and is distributed and arranged regularly or irregularly on an electrostatic chuck surface, and has a circular or almost circular top surface shape and a roundness (R) of 0.01 mm or more is applied to an edge part defined by an intersection of the top surface and a side surface and a portion to which the roundness is applied occupies a quarter of a height h of the protruded portion or more.

Abstract: An aluminum nitride joined body comprising two pieces of aluminum nitride sintered body plates joined together without using adhesive, and a metal layer formed on a portion of the junction interface thereof, wherein, as viewed on a side section passing through the center of the joined body, a plurality of voids are existing in the directly joined region where the sintered body plates are directly facing each other on the junction interface, the voids having an average length L of 0.5 to 4 ?m along the junction interface, thereby forming non-joined portions due to the voids, and a non-joined ratio Q on the side section as calculated by the following formula (1), Non-joined ratio Q=(X/Y)×100??(1) where X is a length of the non-joined portion in the direction of junction interface expressed by the sum of lengths L of the voids existing in the directly joined region, and Y is a length of the directly joined region where the voids are existing, is in a range of from 0.1 to 0.5% on average.

Abstract: A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

Abstract: The present invention discloses an electrostatic chuck for clamping work substrates, said chuck comprising three layers, where the dielectric constant of included non-conductive layers is selected to provide overall lower capacitance to the chuck. In the chuck assembly of the present invention, the top dielectric layer that is in contact with a substrate, such as, for example, a wafer, has a dielectric constant that is preferably greater than about 5, with a resistivity that is preferably greater than about 1E6 ohm.m, whereas the bottom dielectric layer has a dielectric constant that is preferably less than about 5 and a resistivity that is preferably greater than about 1E10 ohm.m. The intermediate layer preferably has a conductive layer where the resistivity is less than about 1 ohm.m. The electrostatic chuck may be bonded to heat sinks coated with anti-arc dielectrics. The heat sink can also be used as an RF electrode.

Abstract: There is provided an electrostatic chuck. The electrostatic chuck includes: a ceramic base containing alumina and first flux; an electrostatic electrode built in the ceramic base; and a ceramic material containing second flux and provided between the ceramic base and the electrostatic electrode, the ceramic material contacting the ceramic base and the electrostatic electrode. A content rate of the second flux is higher than that of the first flux.

Abstract: A plasma processing apparatus 1, in which a substrate W is mounted on a mounting table 11 in a processing chamber 10 and processing gas supplied in the processing chamber 10 is made into plasma to a perform plasma treatment on the substrate W, wherein the mounting table 11 has a mounting table body 12 having a temperature adjusted to be a predetermined level, and an electrostatic chuck 13 disposed on an upper portion of the mounting table body 12 and adsorbing the substrate W thereon; a first heat transfer gas diffusion region 47 is formed at a center of an upper surface of the electrostatic chuck 13 and a second heat transfer gas diffusion region 48 is formed at a circumferential edge of the upper surface of the electrostatic chuck 13; a first heat transfer gas supply unit 51 supplying heat transfer gas to the first heat transfer gas diffusion region 47 and a second heat transfer gas supply unit 52 supplying heat transfer gas to the second heat transfer gas diffusion region 48 are included; and a volume rati

Abstract: An electrode assembly for use in a plasma processing system that includes removable rails that are adjustable for reconfiguring the electrode to accommodate substrates of different widths. The electrode assembly includes an electrode having a plurality of first connecting members. Associated with the electrode is a plurality of rails that cooperate for supporting the substrates on the electrode. Each of the rails includes a plurality of second connecting members. Each of the second connecting members is connected detachably with one of the first connecting members for removably mounting the rails with the electrode.

Abstract: A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

Abstract: A yttria sintered body contains an amount of silicon carbide within a range of 5 to 40% by volume, has a volume resistivity at room temperature within a range of 1×101 to 1×1017 ?·cm, and is adapted for application to an electrostatic chuck.

Abstract: A power supply apparatus includes a power supply mechanism which supplies, from an external power supply, electric power to be supplied to an electrostatic chuck. The power supply mechanism includes a first conductive annular member fixed to the end portion of a strut, and capable of rotating together with the strut, a second conductive annular member fixed to a housing, and brought into surface contact with the first conductive annular member, and a first power supply member which supplies a supplied first voltage to an electrode of the electrostatic chuck via the second conductive annular member and the first conductive annular member.