Strain Gauge Making Patents (Class 29/621.1)
  • Patent number: 8033009
    Abstract: There is provided a method for producing a force sensor including: a force sensor chip; and an attenuator, in which the force sensor chip and the attenuator are joined at joint portions with a glass layer sandwiched therebetween. The method includes: a film forming step in which a glass film as the glass layer is formed on regions of the attenuator containing the joint portions or on regions of the force sensor chip containing the joint portions; and an anodic bonding step in which the force sensor chip and the attenuator are stacked as a stacked body in close contact with each other at the joint portions, and the glass film and the force sensor chip, or the glass film and the attenuator, are joined.
    Type: Grant
    Filed: August 23, 2007
    Date of Patent: October 11, 2011
    Assignee: Honda Motor Co., Ltd
    Inventors: Nariaki Kuriyama, Jun Sasahara, Tadahiro Kubota, Daisuke Okamura, Takeshi Ohsato
  • Publication number: 20110209555
    Abstract: A very robust sensor element for an absolute-pressure measurement is described, which is suitable for high temperatures and able to be miniaturized to a large extent. The micromechanical pressure-sensor element includes a sensor diaphragm having a rear-side pressure connection and at least one dielectrically insulated piezo resistor for signal acquisition. Furthermore, the pressure-sensor element has a front-side reference volume, which is sealed by a cap structure spanning the sensor diaphragm. The cap structure is realized as thin-film structure.
    Type: Application
    Filed: February 25, 2011
    Publication date: September 1, 2011
    Inventors: Marcus Ahles, Hubert Benzel
  • Publication number: 20110152725
    Abstract: Electronic devices, apparatus, systems, and methods of operating and constructing the devices, apparatus, and/or systems include a wireless sensor configured to measure strain of hardware implanted in a subject. In various embodiments, temporal measurement of the hardware strain includes monitoring changes of the resonant frequency of the sensor. The sensor can be realized as an inductively powered device that operates as an all-on-chip resonator, where the components of the sensor are biocompatible. Additional apparatus, systems, and methods are disclosed.
    Type: Application
    Filed: February 25, 2011
    Publication date: June 23, 2011
    Applicant: CHRISTIAN M. PUTTLITZ CONSULTING, LLC
    Inventors: Hilmi Volkan DEMIR, Christian Matthew PUTTLITZ, Rohat MELIK
  • Patent number: 7950139
    Abstract: The invention relates to a method of depositing a coating on a part having its surface made of silicon carbide. The method comprises the following steps: a) applying laser treatment to the SiC surface by superposing laser impacts for the purpose of increasing the roughness of said surface; and b) depositing a coating on the SiC surface by atmospheric thermal spraying. The invention also provides a device for measuring deformation, which device comprises a first alumina coating obtained by atmospheric thermal spraying onto the silicon carbide layer covering the substrate of the part after it has been treated by superposing laser impacts, a free filament strain gauge placed on the coating, and an additional alumina coating obtained by atmospheric thermal spraying onto the strain gauge.
    Type: Grant
    Filed: April 24, 2008
    Date of Patent: May 31, 2011
    Assignee: SNECMA
    Inventors: Frederic Leman, Sebastien Lukat, Sophie Costil, Christian Coddet
  • Publication number: 20100229655
    Abstract: A load detecting device includes a substrate, a load receiver arranged on a first face of the substrate, a load detecting element arranged between the substrate and the load receiver, and a supporting portion to support the substrate. The supporting portion is made of metal. The supporting portion is located to overlap with the load receiver in a direction approximately perpendicular to the substrate. The supporting portion has a plurality of projections contacting with a second face of the substrate opposite from the first face. The projections located adjacent to each other are distanced from each other through a trench.
    Type: Application
    Filed: March 9, 2010
    Publication date: September 16, 2010
    Applicant: DENSO CORPORATION
    Inventors: Hideyuki Hayakawa, Toshio Hosokawa, Kenji Morikawa
  • Patent number: 7765870
    Abstract: An acceleration sensor includes a semiconductor element built in a substrate, a wiring layer formed on the substrate, and a piezoresistor, formed on the substrate and made up of a part of the wiring layer, whose resistivity changes by the action of acceleration.
    Type: Grant
    Filed: August 21, 2007
    Date of Patent: August 3, 2010
    Assignee: Rohm Co., Ltd.
    Inventor: Goro Nakatani
  • Publication number: 20100154556
    Abstract: The disclosed subject matter provides a strain gauge which includes a composite film including a non-metallic matrix and magnetically active particles. At least a portion of the magnetically active particles form one or more chain structures, such that the resistivity of the composite film can vary in response to an applied strain on the composite film. The strain gauge also includes two or more leads affixed to the composite film and electrically coupled with the chain structures. Methods of fabrication and methods of use of the strain gauge based on chain-structured magnetically active particles included in a non-metallic matrix are also disclosed.
    Type: Application
    Filed: December 23, 2009
    Publication date: June 24, 2010
    Inventor: Huiming Yin
  • Publication number: 20100132476
    Abstract: A strain sensor (10) for measuring strain greater than 10%, the sensor (10) comprising: an upper polydimethylsiloxane (PDMS) substrate (20) having measurement electrodes (90) extending therethrough; a lower PDMS substrate (30) bonded to a lower surface of the upper PDMS substrate (20), and an upper surface of the lower PDMS substrate (30) having a patterned portion (50); and a conductive fluid (70) contained within the patterned portion (50) in contact with the measurement electrodes (90).
    Type: Application
    Filed: November 28, 2008
    Publication date: June 3, 2010
    Inventors: Ching-Hsiang Cheng, Chen Chao, Yun Zhu
  • Publication number: 20100058873
    Abstract: A sensor assemblage, in particular a high-pressure sensor assemblage, includes a substrate element and a connector element, the substrate element comprising a sensor structure having a pressure-sensitive diaphragm and a cavity disposed in the region of the diaphragm, the substrate element being connected to the connector element in such a way that the cavity is connected to a hollow space of the connector element, the substrate element moreover including at least one further sensor structure having a pressure-sensitive further diaphragm and a further cavity disposed in the region of the further diaphragm, the further cavity being connected to a further hollow space of the at least one connector element or of a further connector element.
    Type: Application
    Filed: September 8, 2009
    Publication date: March 11, 2010
    Inventors: Frank KLOPF, Arno Stoetzler, Juergen Kober
  • Publication number: 20100031752
    Abstract: The invention relates to pressure sensors that are micromachined using microelectronics technologies. The sensor provided by the invention comprises a cavity (V) hermetically sealed on one side by a silicon substrate (40) and on the other side by a diaphragm (58) that can be formed under the effect of the pressure outside the cavity, the sensor having at least one resistance strain gage (54, 56) fastened to the diaphragm and having resistance that varies as a function of the deformation of the diaphragm. The diaphragm, preferably made of silicon nitride, is fastened to the resistance strain gages. The gages are located beneath the diaphragm inside the sealed cavity (V). It is not necessary to recess the substrate to produce the cavity: the diaphragm is formed by depositing an insulting layer on a sacrificial layer, for example made of a polyamide; it may cover integrated measurement circuits in the silicon substrate.
    Type: Application
    Filed: January 26, 2007
    Publication date: February 11, 2010
    Inventors: Gilles Delapierre, Hubert Grange, Patrice Rey
  • Publication number: 20090320610
    Abstract: A force sensor 1 includes: a force sensor chip 2 including an action portion 21, a connecting portion 23 on which strain resistive elements are disposed, and a support portion 22 for supporting the action portion 21 and the connecting portion 23; an attenuator 3 including an input portion 30 to which an external force is input, a fixing portion 32 for fixing the force sensor chip 2, and a transmission portion 31 for attenuating the external force and transmitting the attenuated external force to the action portion 21; a first glass member 11 disposed between the action portion 21 and the transmission portion 31 and a second glass member 12 disposed between the support portion 22 and the fixing portion 32, through which glass members 11, 12 the force sensor chip 2 and the attenuator 3 are joined. A single or more glass beams 13 joins the first glass member 11 and the second glass member 12 together as a single member.
    Type: Application
    Filed: August 24, 2007
    Publication date: December 31, 2009
    Inventors: Takeshi Ohsato, Shigenori Yasuie, Yusuke Hirabayashi, Hiroshi Yakobayashi
  • Patent number: 7627943
    Abstract: A method of manufacturing a pressure sensor is provided whereby the pressure sensor includes a joint, a diaphragm, and an adapter disposed between the joint and the diaphragm. The adapter includes an axis portion and a flange projecting in a radial direction from the axis portion. The axis portion is disposed such that one end does not interfere with the joint and the other end is welded to the diaphragm. The diaphragm is welded to the adapter and the welded portion the welded portion is positioned on an inner side of an end face of the joint. The joint is caulked to a peripheral edge of the flange of the adapter.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: December 8, 2009
    Assignee: Nagano Keiki Co., Ltd.
    Inventors: Shuji Tohyama, Takayuki Yokoyama, Ikuya Miyahara
  • Publication number: 20090288493
    Abstract: A pressure-sensing module includes a housing having a process-fluid port configured to be coupled to a process-fluid-flow circuit. The housing defines a first chamber into which the process fluid can flow through the process-fluid port. An isolator assembly is disposed within the housing and includes a fill port. The isolator assembly is configured to define a second chamber into which pressure-coupling fluid may be injected through the fill port. An electronic circuit is disposed within the second chamber and is configured to be pressure coupled by the coupling fluid and isolator assembly to the flow circuit. A plug having first and second ends occupies the fill port thereby sealing the second chamber. The first end is exposed to the process fluid in the first chamber, and the second end is exposed to the coupling fluid in the second chamber.
    Type: Application
    Filed: May 21, 2008
    Publication date: November 26, 2009
    Applicant: Honeywell International Inc.
    Inventors: Thomas A. Larson, Gregory C. Brown
  • Publication number: 20090282671
    Abstract: A fabric strain sensor (10) for measuring in-plane unidirectional strain, the sensor (10) comprising a mixture (20) of electrically conductive particles or fibers and an elastomer matrix, applied onto an elastic fabric substrate (30).
    Type: Application
    Filed: May 19, 2008
    Publication date: November 19, 2009
    Inventors: XiaoMing Tao, GuangFeng Wang, YangYong Wang, Hui Zhang
  • Publication number: 20090282930
    Abstract: A force sensor includes a polymeric substrate including a cavity with a tilt plane, at least two metal piezoresistors on the tilt plane, and a contact pad connected to the metal piezoresistors. The tilt plane may include a measured interface of from 15° to 75°.
    Type: Application
    Filed: May 19, 2008
    Publication date: November 19, 2009
    Inventors: Ching-Hsiang CHENG, Chen CHAO
  • Publication number: 20090212899
    Abstract: A low-pressure transducer including a disc-shaped metal diaphragm to which a fluid pressure is applied, wherein the diaphragm contains a raised beam formed by thinning the entire exterior surface of the diaphragm except for the beam; and at least one silicon strain gage glass bonded to the beam, wherein the low-pressure transducer can accurately gage pressures at least as low as 15 psi. The present invention also comprises a method for manufacturing a pressure transducer including the steps of forming a cylindrical diaphragm having a top surface and a lower surface; establishing a diameter and a thickness of the diaphragm relative to an operational plane by a creating a hole axially through the transducer body that terminates at the lower surface; and creating a raised surface in the shape of a cross beam integral to the operational surface; and bonding one or more strain gages thereupon.
    Type: Application
    Filed: February 27, 2009
    Publication date: August 27, 2009
    Applicant: Measurement Specialties, Inc.
    Inventor: Chris Gross
  • Patent number: 7562432
    Abstract: A method for manufacturing a magnetostrictive torque sensor having low nonuniformity of sensitivity characteristics. The residual austenite content in the rotating shaft of the torque sensor is measured first. A magnetic film is subsequently subjected to a heat treatment under heat treatment conditions that are different for each of the measured residual austenite contents, and magnetic anisotropy is imparted.
    Type: Grant
    Filed: October 19, 2006
    Date of Patent: July 21, 2009
    Assignee: Honda Motor Co., Ltd.
    Inventors: Hitoshi Harata, Nobuhiko Yoshimoto, Tomohiro Hoshi, Yukiya Kashimura
  • Publication number: 20090145235
    Abstract: A high temperature thin film strain gage sensor capable of functioning at temperatures above 1400° C. The sensor contains a substrate, a nanocomposite film comprised of an indium tin oxide alloy, zinc oxide doped with alumina or other oxide semiconductor and a refractory metal selected from the group consisting of Pt, Pd, Rh, Ni, W, Ir, NiCrAlY and NiCoCrAlY deposited onto the substrate to form an active strain element. The strain element being responsive to an applied force.
    Type: Application
    Filed: June 5, 2008
    Publication date: June 11, 2009
    Inventors: Otto J. Gregory, Ximing Chen
  • Publication number: 20090120194
    Abstract: A diaphragm for a pressure sensor includes a central portion having a primary thickness and a surrounding secondary portion having a secondary thickness greater than the primary thickness. The pressure sensor includes the diaphragm, a fluid conduit capped by the diaphragm, and a piezoelectric bridge for each of the primary and secondary portions to generate a signal indicative of the displacement of the portions; and a method of producing the sensor.
    Type: Application
    Filed: November 8, 2007
    Publication date: May 14, 2009
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Curtis H. Rahn, Russell L. Johnson
  • Publication number: 20090056462
    Abstract: A manufacturing method of a pressure sensor that includes a pressure detector having a bottomed cylindrical member with a bottom including a thin-wall portion and a strain detecting mechanism provided on one side of the bottom for detecting a strain of the bottom and a pressure-introducing joint for introducing the fluid to be measured into the bottomed cylindrical member is provided. The method includes: first welding for butt-welding an end of the cylindrical portion of the bottomed cylindrical member and an end of the pressure-introducing joint; and second welding for welding the pressure-introducing joint in parallel to a first weld bead formed by the first welding.
    Type: Application
    Filed: September 5, 2008
    Publication date: March 5, 2009
    Applicant: NAGANO KEIKI CO., LTD.
    Inventors: Yoshikazu Kaneko, Hiroshi Kodama, Hiroshi Wakabayashi
  • Publication number: 20090031819
    Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.
    Type: Application
    Filed: August 1, 2008
    Publication date: February 5, 2009
    Inventors: Hiromi Shimazu, Yohei Tanno, Hiroyuki Ohta, Ryuji Takada, Takayuki Shimodaira
  • Publication number: 20090007685
    Abstract: The present invention relates to a strain gauge and methods of making such wherein the gauge contains a doped polymeric fluid suitable for measuring elongations of more than 10%.
    Type: Application
    Filed: July 2, 2007
    Publication date: January 8, 2009
    Applicant: The Hong Kong Polytechnic University
    Inventors: Ching Hsiang Cheng, Chen Chao, Yin Nee Cheung
  • Publication number: 20080314165
    Abstract: A force or pressure sensor and appertaining method for manufacturing are provided in which the sensor comprises a repeating conductive trace pattern that can be replicated to produce a consistent conductive trace across more than one adjacent pattern section forming an electrical bus, wherein more than one section of a series of conductive traces are printed on a thin and flexible dielectric backing using the pattern. The thin and flexible dielectric backing has a repeated pattern of conductive traces printed above the dielectric backing and one or more dielectric layers provided above the conductive traces, the dielectric layers having access regions permitting contact of conductors above the one or more dielectric layers, and a sensor conductor layer printed above the one or more dielectric layers that contacts the conductive traces via at least one of the access regions or regions not covered by the one or more dielectric layers.
    Type: Application
    Filed: June 16, 2006
    Publication date: December 25, 2008
    Inventor: Ilya D. Rosenberg
  • Publication number: 20080229572
    Abstract: A micro-electromechanical capacitive strain sensor. The micro-electromechanical capacitive strain sensor comprises a first bent beam, a second bent beam, and a straight center beam. The first bent beam, second bent beam, and straight center beam are aligned in the X-axis with the straight center beam located between the first and second bent beams. The first bent beam, second bent beam, and straight center beam are disposed between two anchors. The two anchors are aligned in the Y-axis. The first bent beam is bent away from the center beam and the second bent beam is bent towards the center beam to provide a set of differential capacitors with respect to the center beam, wherein the center beam serves as a common reference with respect to the first and second bent beams.
    Type: Application
    Filed: April 30, 2008
    Publication date: September 25, 2008
    Inventor: Suryakala Majeti
  • Publication number: 20080229566
    Abstract: A method for manufacturing an acceleration sensing unit includes: providing an element support substrate in which a plurality of element supporting members is arranged so as to form a plane, each of the element supporting members being coupled to the other element supporting member through a supporting part and having a fixed part and a movable part that is supported by the fixed part through a beam, the beam having a flexibility with which the movable part is displaced along an acceleration detection axis direction when an acceleration is applied to the movable part; providing an stress sensing element substrate in which a plurality of stress sensing elements is arranged so as to form a plane, each of the stress sensing elements being coupled to the other stress sensing element through an element supporting part and having a stress sensing part and fixed ends that are formed so as to have a single body with the stress sensing part at both ends of the stress sensing part; disposing the stress sensing element
    Type: Application
    Filed: January 25, 2008
    Publication date: September 25, 2008
    Applicant: EPSON TOYOCOM CORPORATION
    Inventor: Yoshikuni Saito
  • Publication number: 20080202249
    Abstract: A semiconductor pressure sensing apparatus includes a metallic stem having a diaphragm and a semiconductor sensor bonded to the diaphragm. The semiconductor sensor includes a gauge section and first and second bonding pads. The gauge section is configured to be deformed according to a deformation of the diaphragm. The first and second bonding pads are respectively connected to different positions of the gauge section so that an electrical resistance between the first and second bonding pads can change with a change in the deformation of the diaphragm. The gauge section is formed to a semiconductor layer of an silicon-on-insulator substrate. The semiconductor sensor is directly bonded to the diaphragm by activating contact surfaces between the semiconductor sensor and the diaphragm.
    Type: Application
    Filed: January 29, 2008
    Publication date: August 28, 2008
    Applicant: DENSO CORPORATION
    Inventors: Hisanori Yokura, Yoshihiko Isobe, Eishi Kawasaki
  • Patent number: 7398587
    Abstract: Disclosed is a method for manufacturing a capacitance type sensor comprising an insert molding process for insert-molding, with an insulating material, a part of a lead wire of a leadframe and a range of the leadframe including the capacitance element electrode, the leadframe being formed by integrally forming with a frame the capacitance element electrode and the lead wire thereof in a predetermined pattern. The method comprises a cutting process for cutting the lead wire of the capacitance element electrode off the frame. It further comprises a conductive member arranging process for arranging, to a mold product obtained by the insert molding process, the conductive member at a distance from the capacitance element electrode. Also included is a movable electrode arranging process for arranging, to the mold product, the movable electrode to be in contact with the lead wire of the movable electrode at a distance from the conductive member.
    Type: Grant
    Filed: October 6, 2004
    Date of Patent: July 15, 2008
    Assignee: Nitta Corporation
    Inventor: Hideo Morimoto
  • Publication number: 20080122572
    Abstract: A strain sensor is provided including a substrate, and a sensing layer, including cobalt, provided on the substrate. A first electrode is coupled to the sensing layer, and a tunnel layer including aluminum oxide is provided on the sensing layer. In addition, a pinned layer, also including cobalt, is provided on the tunnel layer. An exchange biasing layer is provided on the pinned layer, and a second electrode is coupled to the exchange biasing layer. The strain sensor is configured such that, over a range of values of strain applied to the sensor, a resistance of the sensor is a linear function of the strain. A related method is also disclosed.
    Type: Application
    Filed: November 24, 2006
    Publication date: May 29, 2008
    Inventors: Shien-Uang Jen, Wen-Chih Chen, Yuan-Tsung Chen, Yeong-Der Yao
  • Publication number: 20080117017
    Abstract: A plate member 101 having flexible portions; plate members 102 to 104 having openings corresponding to the flexible portions of the plate member 101; a plate member 201 having flexible portions; and plate members 202 to 204 having openings corresponding to the flexible portions of the plate member 201 are formed by etching. The plate members 101 to 104 and 201 to 204 are bonded by diffusion bonding process to make first and second flanges 100 and 200. Interconnecting shafts are formed by cutting. The first and second flanges 100 and 200 and the interconnecting shafts are bonded by diffusion bonding process to make a strain generation unit 5. Strain gauges are attached to the lower face of the strain generation unit 5. A stain gauge type sensor 1 is thus made.
    Type: Application
    Filed: November 13, 2007
    Publication date: May 22, 2008
    Applicant: NITTA CORPORATION
    Inventor: Hideo Morimoto
  • Publication number: 20080083287
    Abstract: An object of the present invention is to provide a low cost load sensor while securing compact dimensions, high reliability and quality, and also to provide a manufacturing method of the load sensor.
    Type: Application
    Filed: July 14, 2005
    Publication date: April 10, 2008
    Inventors: Daiji Uehara, Yasushi Yamamoto, Toshio Honma
  • Publication number: 20080084269
    Abstract: A mechanical-to-electrical sensing structure has first and second movable blocks formed in a handle layer. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. The first hinge is formed in the handle layer. A first gauge is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gauge. The first gauge is formed from a device layer with an oxide between the device and handle layers. The sensing structure is made from an SOI wafer, and the first gauge is protected during an etching away of handle material beneath the first gauge by an oxide between the device and handle layers and an etch-resistant oxide or nitride on exterior surfaces of the first gauge.
    Type: Application
    Filed: October 5, 2006
    Publication date: April 10, 2008
    Inventor: Leslie Bruce Wilner
  • Publication number: 20080041157
    Abstract: An acceleration sensor according to the present invention includes a semiconductor element built in a substrate, a wiring layer formed on the substrate, and a piezoresistor, formed on the substrate and made up of a part of the wiring layer, whose resistivity changes by the action of acceleration.
    Type: Application
    Filed: August 21, 2007
    Publication date: February 21, 2008
    Applicant: ROHM CO., LTD.
    Inventor: Goro Nakatani
  • Patent number: 7194923
    Abstract: A thin-film resistor (5) provided on a strain-generating part (2) via an insulating film (4) and an electrode thin-film (6) including an electrode pad (10) arranged in the thin-film resistor (5) are provided. The thin-film resistor (5) includes a strain-detecting thin-film resistive part (8) and an electrode connection (9) connected to the resistive part (8). The electrode connection (9) is formed to extend to the electrode pad (10). The electrode pad (10) includes an external-connection bonding area (12) and a testing probe area (13) formed at different positions. The electrode pad (10) is disposed on a tubular rigid body (1) provided at the outer peripheral edge of a strain-generating part (2).
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: March 27, 2007
    Assignee: Nagano Keiki Co., Ltd.
    Inventors: Naoki Yoshida, Hiroshi Kodama, Hiroshi Nagasaka
  • Patent number: 7181831
    Abstract: A strain sensor comprising a metal substrate, a first electrode provided on the metal substrate, a glass layer formed on the first electrode, and a second electrode and a strain detecting resistor provided on the glass layer. In the strain sensor, the insulation resistance between the metal substrate and the second electrode has been raised, and the reliability is high. It can be implemented at low cost.
    Type: Grant
    Filed: September 10, 2004
    Date of Patent: February 27, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Keiichi Nakao, Yukio Mizukami, Hiroaki Ishida, Toshiro Otobe
  • Patent number: 7065861
    Abstract: The invention relates to a strain-sensitive resistor, comprising a resistance layer arranged on a support element and an electromechanical transducer produced with this resistor. An increase in the electrical measured signal picked off across the resistor is achieved in a simple way by the support element (1) having a recess (7) on its surface (9) which, when the support element (1) is subjected to mechanical stress in at least one area of the surface (9) of the support element (1) in which the resistance layer (4) is positioned, produces a ratio between the two main strain directions (L, T) of the resistance layer (4) which differs in magnitude.
    Type: Grant
    Filed: October 27, 2004
    Date of Patent: June 27, 2006
    Assignee: Mannesmann VDO AG
    Inventors: Arthur Schäfert, Jürgen Irion, Zlatko Penzar, Wolfgang Porth
  • Patent number: 6993828
    Abstract: A metal resistor and a method for manufacturing the resistor are provided. A first insulation film is formed on a substrate, a photosensitive film is applied on the insulation film, and an insulation film pattern is formed by patterning the insulation film. After a metal thin film is formed among the insulation film pattern and on the photosensitive film, with removing the photo-sensitive film is a metal thin film pattern formed among the insulation film pattern. On the metal thin film pattern and the insulation film pattern is a second insulation film formed and at the pad region of the metal thin film pattern is a lead wire connected, after that, a metal thin film resistor is manufactured with forming a preservation film on and around the lead wire.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: February 7, 2006
    Assignee: Inostek Inc.
    Inventors: Jo-Woong Ha, Seung-Hyun Kim, Dong-Yeon Park, Dong-Su Lee, Hyun-Jung Woo
  • Patent number: 6983521
    Abstract: The invention relates to a method of manufacturing a strain element. In one aspect, the method of the invention comprises forming a coating film of titanium or a titanium compound on a surface of a cylindrical mold, and shaping the coating film like a coil. The method invention further comprises forming a crystal film of a strain element having a property of a piezoelectric inverse effect by hydrothermal synthesis on the coating film shaped like the coil, and removing the strain element from the cylindrical mold.
    Type: Grant
    Filed: January 5, 2004
    Date of Patent: January 10, 2006
    Assignee: Omron Corporation
    Inventors: Nobuaki Omata, Atsushi Irie
  • Patent number: 6865799
    Abstract: A method of manufacturing strain-detecting devices is provided. First, plural cylindrical substrates, each of which has one end closed by a diaphragm, are fixedly placed at predetermined positions of a fixing plate. A positioning marker is previously given to the fixing plate. The fixing plate having the substrates is then assembled into a jig. The jig sustains the substrates so that an outer surface of the diaphragm of each substrate is held at the same level. Through positioning the substrates, all the diaphragms are then positioned in place in a plane direction of the fixing plate with reference to the positioning marker. A strain gage portion is simultaneously formed on each of all the diaphragms. The fixing plate is then disassembled from the jig. In this step, the substrates with the strain gage portions, i.e., strain-detecting devices, are separated from the fixing plate.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: March 15, 2005
    Assignee: Nagano Keiki Co., Ltd.
    Inventors: Yukihiko Hata, Kunihiro Yamaura, Hiroshi Nagasaka
  • Patent number: 6842965
    Abstract: A strain detector where water does not reach a strain-resistance element and which supplies stable output at all times is provided. In the strain detector, a first protective layer made of glass is disposed to cover an insulating substrate and the strain-resistance element. A second protective layer made of resins or glass for covering the first protective layer, and a thermistor for compensating the resistance of the strain-resistance element are disposed.
    Type: Grant
    Filed: July 2, 2002
    Date of Patent: January 18, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshirou Otobe, Takashi Kawai, Yukio Mizukami
  • Patent number: 6842970
    Abstract: A method of producing a strain sensitive resistor includes matching an area of a film insulating layer to a shape of a recess in a surface of a support element. The film insulating area is applied to the support element so that the area of the film matching the shape of the recess is congruent with the shape of the recess. A resistive layer comprising strain-sensitive resistors is applied to the film insulating layer and the film insulating layer and the resistive layer are applied to heat treatment.
    Type: Grant
    Filed: November 6, 2002
    Date of Patent: January 18, 2005
    Assignee: Mannesmann VDO AG
    Inventors: Arthur Schäfert, Jürgen Irion, Zlatko Penzar, Wolfgang Porth
  • Patent number: 6725514
    Abstract: A method of making a low-cost metal diaphragm sensor that integrates both pressure and temperature sensing in a single sensor assembly utilizes thick-film processing to form a circuit including stress and temperature sensitive elements on the outboard or exposed surface of a thin metal diaphragm separating the circuit from a pressurized fluid. Only a thin layer of dielectric separates the stress and temperature sensitive elements from the diaphragm surface. The stress sensitive elements respond to mechanical stressing of the diaphragm due to the presence of the pressurized fluid, while the temperature sensitive element responds to the temperature of the pressurized fluid. The thermal capacity of the fluid greatly exceeds that of the diaphragm, so that the temperature responsive characteristic of the temperature sensitive element accurately reflects the temperature of the pressurized fluid.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: April 27, 2004
    Assignee: Delphi Technologies, Inc.
    Inventors: James I. Moyer, Joseph M. Ratell
  • Patent number: 6684487
    Abstract: A load cell is constructed with several strain gauges. Each of the strain gauges are formed with a meandering conductive portion on a substrate or base member. Portions of the meandering conductive layer defines a predetermined tab ratio. The base member is formed with a predetermined amount of filler and the tab ratio is pre-determined such that the creep characteristic of the strain gauge is substantially zero in a load cell having a generally low rated load.
    Type: Grant
    Filed: October 12, 2001
    Date of Patent: February 3, 2004
    Assignee: Ishida Co.
    Inventors: Kazufumi Naito, Kenji Imai, Matsuo Zama, Naoki Sasaki
  • Patent number: 6651315
    Abstract: An electrical device which comprises first and second laminar electrodes and a laminar PTC resistive element sandwiched between them, the device comprising: (a) a main portion which comprises a main part of the first electrode, a main part of the second electrode, and a main part of the resistive element; and (b) a first connection leg which extends away from the main portion and which comprises a first leg part of the first electrode which is integral with the main part of the first electrode, and a first leg part of the resistive element which is integral with the main part of the resistive element. Such devices can be secured to circuit boards in a variety of ways, and to elastically deformed terminals. Preferably preferred devices contain two laminar electrodes, with a PTC element between them, and a cross-conductor which passes through the thickness of the device and contacts one only of the two electrodes.
    Type: Grant
    Filed: October 27, 1998
    Date of Patent: November 25, 2003
    Assignee: Tyco Electronics Corporation
    Inventors: Gregory A. Graves, Michael Mengruo Zhang, Daniel Chandler, Chi-Ming Chan, Shou-Mean Fang, Dennis Siden, Mark Thompson
  • Publication number: 20030213122
    Abstract: A load cell is made by polymer/metal composite materials or pure polymer with two or more flexible arms to transmit loading and four or times of four strain gages to transfer mechanical strain into electrical signal. The structure of load cell can be standed various direction and various position of loading. With dramatically reduction in manufacturing step, the processing time can be correspondently shortened. This gives flexibility in manufacturing.
    Type: Application
    Filed: May 15, 2002
    Publication date: November 20, 2003
    Inventor: Kent Koh
  • Patent number: 6571456
    Abstract: A method for manufacturing a torsional sensing load cell includes providing a member configured to sense torsion. Strain gauges are provided on selected portions of the member, such that torsion force produced an applied load is detected by the strain gauges.
    Type: Grant
    Filed: May 1, 2001
    Date of Patent: June 3, 2003
    Assignee: GageTek Technologies Holdings Company
    Inventor: Robert W. Bruns
  • Patent number: 6570485
    Abstract: A transducer packaging assembly for use in a sensing unit subjected to high forces of acceleration includes a base having a cavity. A pressure sensitive semiconductor die is bonded to a large backplate having a shape so that it nestles into the cavity but is spaced from a surface of the cavity. A planar cover secured to the base has a hole larger than the die but smaller than the backplate, and thin wires extend from the die to electrical connections on the assembly. A viscous fluid fills a space between the backplate and the cavity, and a space between the backplate and the cover, and transmits a pressure to be measured to the pressure sensitive die. The viscous fluid has a sufficiently high viscosity to oppose movement of the backplate relative to the cavity while cushioning the pressure sensitive die and the backplate from forces of acceleration.
    Type: Grant
    Filed: November 17, 2000
    Date of Patent: May 27, 2003
    Assignee: Honeywell International Inc.
    Inventors: Thomas G. Stratton, Terrence D. Bender, Joel J. Bodin, Reinhart Ciglenec, Frank F. Espinosa, Edgar R. Mallison
  • Publication number: 20030000073
    Abstract: A strain detector where water does not reach a strain-resistance element and which supplies stable output at all times is provided. In the strain detector, a first protective layer made of glass is disposed to cover an insulating substrate and the strain-resistance element. A second protective layer made of resins or glass for covering the first protective layer, and a thermistor for compensating the resistance of the strain-resistance element are disposed.
    Type: Application
    Filed: July 2, 2002
    Publication date: January 2, 2003
    Inventors: Toshirou Otobe, Takashi Kawai, Yukio Mizukami
  • Patent number: 6442812
    Abstract: A method of manufacturing a piezoelectric torque transducer is provided, comprising the steps of (a) forming a prepared area on a surface of a torsion member adapted to be strained by an applied torque; (b) providing a piezoelectric element having an axis of maximum strain sensitivity and disposing first and second electrodes on opposite faces of the element, respectively, and attaching an electrical lead to each electrode; (c) connecting electrical leads to the electrodes; and (d) disposing the element on the prepared area and orienting the axis of maximum strain sensitivity on the member and securing the element to the prepared area with a material selected from a group consisting of (i) adhesive material and (ii) potting material.
    Type: Grant
    Filed: March 2, 2000
    Date of Patent: September 3, 2002
    Assignee: Eaton Corporation
    Inventors: John A. Kovacich, Wayne S. Kaboord, Fred J. Begale, Robert R. Brzycki, Birger Pahl, James E. Hansen
  • Publication number: 20020073533
    Abstract: A design method to eliminate any micro-openings in a very high pressure sensor assembly is provided. The method involves sealing an elongated silicon pressure sensor into a fitting using an alloy and glass based materials. The materials are selected so that their thermal coefficients of expansion are progressively increasing relative to the silicon sensing element. This allows strong bonding among the materials, thereby minimizing any pressure leakage.
    Type: Application
    Filed: December 4, 2000
    Publication date: June 20, 2002
    Applicant: Kavlico Corporation
    Inventor: Kyong M. Park
  • Patent number: 6301775
    Abstract: A temperature compensation element for a high-temperature strain gage and the method of fabricating the same. Preferably, the element is a “dummy” strain gage not mechanically attached to the substrate. The element is encapsulated in an insulative material and used to compensate an active high-temperature strain gage and wired in a half-bridge configuration. The temperature compensation element and high-temperature strain gage are fabricated using the method of the present invention. This method includes temporarily adhering the element to a heat sink, encapsulated in an insulative material and then removed from the heat sink. Next, the element is either stacked or placed near the active gage. Ideally, the element and the active gage have substantially similar heat transfer and electrical properties.
    Type: Grant
    Filed: December 17, 1998
    Date of Patent: October 16, 2001
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Anthony Piazza