Abstract: A method for forming a thin-film resistor includes forming two insulators on the thin-film resistor, forming contact holes by performing wet etching processes, and forming interconnect and contact plugs at the same time. The invention also provides another method for forming a thin-film resistor that forms a thin-film resistor over the passivation layer instead. That is, forming a thin-film resistor on the top of the device, so that the resistance can be re-modified according to the actual needs.

Abstract: A method for producing an electric resistor, in particular a resistance strain gauge, in which an insulating layer and a resistive layer are sequentially applied to a carrier element. The insulating layer or the resistive layer is applied to a backing sheet, the side of the backing sheet carrying the insulating or resistive layer being covered with a flexible film layer whose adhesion to the insulating layer or resistive layer is stronger than the adhesion of the backing sheet to the insulating layer or resistive layer. The film layer with the insulating or resistive layer is peeled off of the adhesive backing sheet and applied to a carrier element, which is heated to burn off the film layer and sinter on the insulating or resistive layer.

Abstract: A method of filling a measuring chamber of a transducer measuring a pressure or a pressure differential with a pressure transmission fluid through a filling channel is described. In this method, a filling pin having a longitudinal channel over part of its total length is inserted into the filling channel to the extent that there remains an open connection of the measuring chamber to the outside. After evacuating, the pressure transmission fluid which is under vacuum is introduced into the measuring chamber through the longitudinal channel under the influence of gravity, and then a supplementary amount of pressure transmission fluid is introduced into the measuring chamber by pushing the filling pin beyond the end of its longitudinal channel.

Abstract: A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

Abstract: A sensor comprises a semiconductor pellet (10) including a working portion (11) adapted to undergo action of a force, a fixed portion (13) fixed on the sensor body, and a flexible portion (13) having flexibility formed therebetween, a working body (20) for transmitting an exterted force to the working portion, and detector means (60-63) for transforming a mechanical deformation produced in the semiconductor pellet to an electric signal to thereby detect a force exerted on the working body as an electric signal. A signal processing circuit is applied to the sensor. This circuit uses analog multipliers (101-109) and analog adders/subtracters (111-113), and has a function to cancel interference produced in different directions. Within the sensor, two portions (E3, E4-E8) located at positions opposite to each other and producing a displacement therebetween by action of a force are determined. By exerting a coulomb force between both the portions, the test of the sensor is carried out.