Abstract: The packaged piezoelectric resonator comprises a case (170; 270) with a lid (140; 240) and a piezoelectric resonator element (110) housed in said case, The piezoelectric resonator element includes a planar tuning-fork-shaped part with two parallel vibrating arms (112, 114), and an additional attachment arm (118) intended for fixing the resonator element (110) to the bottom (172) of the case (170). The inside surface of the lid (140, 240) is stepped in such a way as to form a first portion (142) where the lid has a first thickness and a second portion (144) where the lid has a second thickness substantially greater than the first thickness, the first portion (142) extending at least over distal end portions (166, 168) of the vibrating arms (112, 114), and the second portion (144) extending at least over a part of the attachment arm (118).

Abstract: Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.

Abstract: The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.

Abstract: A resonator comprises a bottom electrode layer (12), a top electrode layer (10) which defines a resonator body; and a piezoelectric layer (14) sandwiched between the top and bottom electrode layers. An external region (152) is provided around the outside of the periphery of the resonator body. The cutoff frequency of a first resonance mode of the external region (152) is matched to the cutoff frequency of a second, different, resonance mode of the resonator body. The invention provides a deliberate change (typically increase) in the cutoff frequency the resonance modes in the external region, so that one of the modes has a cutoff frequency close to the cutoff frequency of the fundamental mode of the resonator body.

Abstract: An apparatus for determining and/or monitoring at least one physical or chemical, process variable of medium having at least one oscillatable unit, which produces, and/or receives, mechanical oscillations. Included is at least one tuning unit, whose stiffness is changeable and which is embodied in such a manner and connected in such a manner with the oscillatable unit, or is a part of the oscillatable unit in such a manner, that at least the resonance frequency of the oscillatable unit is changeable via the tuning unit. A corresponding method is also noted.

Abstract: A method for forming a vertical coupling structure for non-adjacent resonators is provided to have a first and a second resonators, a dielectric material layer, a first and a second high-frequency transmission lines and at least one via pole. The first and the second resonators respectively have a first and a second opposite metal surfaces. The dielectric material layer is disposed between the opposite second metal surfaces of the first and the second resonators. The first and the second transmission lines are respectively arranged at sides of the first metal surfaces of the first resonator and the second resonator. The first high-frequency transmission line is vertically connected to the second high-frequency transmission line by the via pole.

Abstract: Apparatus and methods of connecting mechanical resonating structures to a body are described. Multi-element anchors may include a flexible portion that flexes when the mechanical resonating structure vibrates. The flexible portion may have a length related to the resonance frequency of the mechanical resonating structures. Some of the multi-element anchors include elements that are oriented perpendicularly to each other. MEMS incorporating such structures are also described.

Abstract: A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

Abstract: The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second.

Abstract: A method of manufacturing a piezoelectric element includes: forming a first base substrate having an element to be transferred; forming a second base substrate; and transferring the element to the second base substrate. The forming of the element includes forming a first electrode above a first substrate, forming a piezoelectric layer above the first electrode, forming a second electrode above the piezoelectric layer, crystallizing the piezoelectric layer, forming a dielectric layer above the second electrode, and etching the dielectric layer such that part of the second electrode is exposed and the dielectric layer has a protrusion upwardly protruding relative to the second electrode. Forming the second base substrate includes forming a third electrode above a second substrate. The transferring includes bonding the element and the second base substrate such that the second substrate is in contact with the protrusion and the second electrode is in contact with the third electrode.

Abstract: A sensing membrane applied to a micro-electro-mechanical system (MEMS) device includes a body, a stress releasing structure and a connecting portion. The stress releasing structure for releasing a membrane residual stress surrounds the body. The stress releasing structure has several first perforations and several second perforations. The first perforations are located between the body and the second perforations. The connecting portion connects the stress releasing structure and a substrate of the MEMS device.

Abstract: Embodiments of a missile, an airframe and a structure comprising piezoelectric fibers and a method for active structural response control are generally described herein. In some embodiments, a housing structure includes a composite material containing a plurality of piezoelectric fibers adapted to generate an electrical signal in response to a deformation in the structure and to deform the structure in response to an electrical signal applied thereto. A control circuit receives the sensed signal from the fibers and generates an excitation signal that is applied to the fibers to increase the stiffness or compliance of the fibers at predetermined frequencies. In an illustrative embodiment, the control signal is adapted to provide low frequency stiffness and strength performance while attenuating high frequency vibrations to protect electronics housed within the structure.

Abstract: Disclosed are piezoelectrically-transduced micromachined bulk acoustic resonators fabricated on a polycrystalline diamond film deposited on a carrier substrate. Exemplary resonators comprise a substrate having a smooth diamond layer disposed thereon. A piezoelectric layer is disposed on the diamond layer and top and bottom electrodes sandwich the piezoelectric layer. The resonant structure comprising the diamond layer, piezoelectric layer and electrodes are released from the substrate and are free to vibrate. Additionally, one or more sensing platforms may be coupled to the substrate to form a mass sensor.

Abstract: A thin-film resonator and a method for producing a thin-film component includes, for the purpose of structuring an upper first dielectric layer, a mask that comprises a second dielectric layer facing the upper dielectric layer and a photoresist layer. Initially, the photoresist layer that serves as photomask during the structuring of the second dielectric layer is structured. The structures of the second dielectric layer, together with the structures of the photoresist layer located thereabove, form a mask that is used for structuring the first dielectric layer.

Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Abstract: A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.

Abstract: There is provided a technique that can increase sensitivity of a resonator. A ratio Rb/Ra between an inner diameter Rb and an outer diameter Ra of the resonator 20 is appropriately selected, and thus there may be a fixed point where an r component (U(Ra) or U(Rb)) of displacement in a radial direction and an r component (V(Ra) or V(Rb)) of displacement in a tangential direction are 0 on an outer diameter portion or an inner diameter portion of the resonator 20. In this case, the resonator 20 is supported by a holding member 22 constituted by a single-span beam set so that a boundary condition on a side of the resonator 20 is pinned and a boundary condition on a side of an anchor that supports the resonator 20 is clamped at the fixed point, and this prevents vibration energy of the resonator 20 from being lost through the holding member 22, avoids a state to disturb a vibration mode, and achieves a sensor having high sensitivity.

Abstract: A resonator element includes: three or more resonating arms, each of the resonating arms including; a lower electrode provided on a first surface of the resonating arm, a piezoelectric film formed on the lower electrode, an upper electrode formed on the piezoelectric film, a first wiring line coupled to the lower electrode, and a second wiring line coupled to the upper electrode; and a base to which the resonating arms are connected. In the resonator element, the resonating arm vibrates in a thickness direction of the resonating arm. The resonating arms adjacent to each other vibrate in opposite directions from each other. The first surface is opposed to a second surface in the thickness direction. The second wiring line is drawn out to the second surface through side surfaces of the resonating arm so as to surround the resonating arm.

Abstract: A piezoelectric energy harvesting device (PEHD) comprising a driving element, conducting element, piezoelectric layer and non-piezoelectric layer capable of converting ambient mechanical energy into electrical energy. The piezoelectric layer may be constructed from PMN-PT or PZT having a thickness of about 1-150 ?m. The PEHD may be used to generate about 1 W. The harvested energy may be stored and used to power microelectronic devices and rechargeable battery technologies.

Abstract: A BAW device includes a semiconductor substrate with a surface region, an insulating layer formed on the surface region and a piezoelectric layer sandwiched by a first and second electrode, wherein the second electrode is formed on the insulating layer. The surface region is performed such that a voltage dependence of a capacitance between the substrate and the second electrode is substantially suppressed.

Abstract: An electroacoustic component operates with guided acoustic waves and includes a first substrate, a second substrate, a metallic layer and an intermediate layer. The first substrate (S1) is made from a monocrystalline LiTaO3. The metallic layer is arranged between the first substrate and the intermediate layer. The intermediate layer is arranged between the metallic layer and the second substrate. The crystal section of monocrystalline LiTaO3 is chosen such that for the second Euler angle ?: ?100°????40° or ?160°????130°. For the first Euler angle ?, preferably ?=0° and for the third Euler angle ?, ?10°???10°.

Abstract: To provide a method for manufacturing a quartz piece which can suppress the deterioration of the CI and the temperature characteristic failure by forming the end surface of the quartz piece perpendicularly. A method for manufacturing a quartz piece that has a shape having two sides facing each other from a quartz substrate, includes the steps of: forming an etching mask provided with an opening area for forming the outside shape along one side out of the two sides which face each other, and provided with no opening area on the other side out of the two sides facing each other, on one surface side of the quartz substrate; and forming an etching mask provided with an opening area for forming an outside shape along the other side out of the two sides which face each other, and provided with no opening area on the one side, on the other surface side of the quartz substrate.

Abstract: A composite mode transducer for dissipating heat generated by a heat generating element is disclosed. The composite mode transducer includes a transducing module and connection elements. The transducing module includes first and second transducing elements connected in parallel. The connection elements are connected to resonance nodes of the first and second transducing elements. The first and second transducing elements are driven by a multiple-frequency resonance circuit, to produce resonance vibration of composite modes at resonance vibration frequencies of the system. The resulting advantages by using the composite mode transducer are: elimination of local stress concentration, and enhancement of efficiency, endurance and stability of the system. Accordingly, drawbacks of the prior art are overcome. The present invention further provides a cooling device with the composite mode transducer.

Abstract: There is provided a piezoelectric vibrating reed, including: a base formed of a piezoelectric material and having a predetermined length; a plurality of vibrating arms extended from one side of the base; a support arm extended in a width direction from the other side spaced apart from the one side of the base by a predetermined interval and extended outside the vibrating arms in the same direction as the vibrating arms; and a cut portion formed of the piezoelectric material reduced in its width direction at a location closer to the vibrating arms than a connection portion where the support arms are connected to the base as one body, wherein a through-hole is also disposed at a location closer to the vibrating arms than the connection portion where the support arms are connected to the base as one body.

Abstract: A circuit (800) for controlling at least one piezoelectric actuator (142) includes a piezoelectric drive circuit (802) that generates unidirectional voltage drive signal, also referred to as Vout, at node (804). The piezoelectric actuator drive circuit (802) includes a boost switcher circuit or charging circuit (806), a buck switcher circuit or pulsed current sink discharge circuit (808) and a control signal generating circuit (810) that receives an input control signal (812) from, for example, a keyboard processor or other suitable processor (604) indicating that the device has requested generation of haptic feedback utilizing the piezoelectric actuator (142). The control signal generating circuit (810) provides at least two pulse-with-modulated control signals, one to control the charging circuit and one to control the discharging circuit to produce the unidirectional voltage drive signal, that in one example is a raised cosine drive signal (904).

Abstract: A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

Abstract: A piezoelectric oscillation element (1) comprising a piezoelectric substrate (10), a first conductor film (21) formed on one main surface of the piezoelectric substrate (10), a second conductor film (22) formed on the other main surface, and grounding terminals (31a, 31b) formed on the side surfaces of the piezoelectric substrate (10). Specified capacitances are respectively formed between the first and second conductor films (21, 22) formed on the main surfaces of the piezoelectric substrate (10) and the grounding terminals (31a, 31b) formed on the side surfaces thereof. Larger capacitances can be formed than when electrodes are disposed on the same main surface in proximity of each other to form a capacitance, whereby no adverse effect is given to thickness vibration occurring between the first and second conductor films (21, 22).

Abstract: The invention is a system incorporating a self-tuning resonator and method of self-tuning a resonator within a system. In one embodiment, a method of powering a system with energy harvested from a vibrating surface includes receiving a first mechanical energy at a first driving frequency from the vibrating surface, transferring the received first mechanical energy to a suspended structure within the system, vibrating the suspended structure with the transferred first mechanical energy, passively adjusting the resonant frequency of the suspended structure to a first resonant frequency associated with the first driving frequency by moving a movable mass in response to the movement of the suspended structure, vibrating the adjusted suspended structure with the transferred first mechanical energy, generating electrical energy using the vibrations of the adjusted suspended structure, and powering the system with the generated electrical energy.

Abstract: Tunable vibration energy scavengers and methods of operating the same are disclosed. The disclosed energy scavengers comprise a beam with a main body, wherein the beam comprises at least one flap and means for changing a shape of the at least one flap, wherein the at least one flap is physically attached to the main body along a longitudinal side of the main body. The disclosed methods comprise tuning the shape of the at least one flap, thereby tuning the stiffness of the structure.

Abstract: Disclosed herein is a flight state detection apparatus and a flight state detection method that is capable of accurately detecting the flight state of a micro object ejected from a micro object ejection part. The flight state detection apparatus is constructed in a simplified structure and is manufactured at low costs. The flight state detection apparatus includes a sensor substrate, a piezoelectric/electrostrictive element, and an aperture plate. The sensor substrate includes a thick support part and a vibrating plate supported by the thick support part in a cantilever shape. The piezoelectric/electrostrictive element is mounted to a fixed end side of the vibrating plate. In the aperture plate, an aperture is formed, which is opposite to a target part disposed at a free end side of the vibrating plate.

Abstract: A piezoelectric resonator includes a substrate and a thin-film section. The thin-film section includes a first thin-film section supported by the substrate, and an acoustically-isolated second thin-film section which is separated from the substrate. In the second thin-film section, first and second electrodes are arranged on the respective main surfaces of a piezoelectric film, and a vibration section is provided at an area where the first and the second electrodes overlap each other on the second thin-film section when viewed through in the film-thickness direction. The thin-film section further includes a heat-radiating film which is in contact with peripheral edges of at least the first electrode among the first and second electrodes defining portions of a periphery of the vibration section, and which extends from the peripheral edges to the first thin-film section when viewed through in the film-thickness direction.

Abstract: According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator.

Abstract: Nowadays floor structures in the fuselage of airplanes, which floor structures comprise transverse floor girders, are usually connected to the frame on the right and left by means of rivets and are in turn supported vertically downward by the frame by way of Samer rods. According to one embodiment of the present invention a structural element for an aircraft is stated, comprising an active element and a passive element. In this way additional stiffening of the fuselage, a reduction in fuselage deformation, or active vibration dampening can be provided without additional weight.

Abstract: To provide a method for manufacturing a piezoelectric thin film resonator with excellent characteristics. A method for manufacturing a piezoelectric thin film resonator in accordance with the present invention includes a step of forming a laminated body by successively laminating, above a first substrate, a piezoelectric thin film and a first electrode, a step of bonding a second substrate and the laminated body, a step of separating the first substrate from the laminated body, a step of forming a second electrode above the piezoelectric thin film, and a step of patterning the second electrode, the piezoelectric thin film and the first electrode.

Abstract: A vibration unit including a frame, a vibration element including a substrate configured to vibrate, and a beam configured to connect the vibration element to the frame. The vibration unit is produced by applying an etching process to at least two surfaces of a substrate. A meeting position of the two surfaces of the substrate located where a first etching process, which takes place on a first surface of the substrate and a second etching process, which takes place on a second surface of the substrate meet, and is located at a position other than a center position in a width direction of the beam.

Abstract: A bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes and a semiconductor layer arranged between the first and second electrodes. The semiconductor layer is electrically isolated from the first electrode.

Abstract: A porous layer composed of porous silicon, and the like is formed by anodization and the like on a substrate acting as a vibration sheet of, for example, a liquid discharging head, and a single crystal thin film is epitaxially grown on the porous layer. A lower electrode, a piezoelectric film, and an upper electrode are laminated on the single crystal thin film, and the piezoelectric film is made to a single crystal or a highly oriented polycrystal by a heat treatment. Stress caused by a difference between the thermal expansion coefficient of the substrate and that of the piezoelectric film can be eased by interposing the porous layer therebetween.

Abstract: A piezoelectric generator includes a piezoelectric ring having upper and lower plane surfaces and a first quality factor (Q-factor), a sound-wave conducting gasket acoustically coupled to the upper plane surface, a metal resonator ring positioned acoustically coupled to the conducting gasket, the metal resonator ring having a second Q-factor substantially greater than the first Q-factor, and at least one bent elastic pusher extending from a periphery of the metal resonator ring. In the generator, an external diameter of the conducting gasket is less than half of an external diameter of the metal resonator ring and the piezoelectric ring, the conducting gasket, and the metal resonator ring are concentrically aligned with respect to a rotational axis.

Abstract: Energy converters and associated methods are disclosed herein. In one embodiment, an energy converter includes a first structural member spaced apart from a second structure member, a first piezoelectric element and a second piezoelectric element individually coupled to the first structural member and the second structural member, and a deflection member tensionally suspended between the first and second piezoelectric elements. The deflection member is substantially rigid.

Abstract: The active/passive absorber for extended vibration and sound radiation control includes principally two layers. The first layer has a low stiffness per unit area which allows motion in the direction perpendicular to its main plane. The second layer is principally a mass layer. These two combined layers have a frequency of resonance close to one of the main structure. The dynamic behavior of the coupled system makes the active/passive absorber a passive absorber; however, the first layer can be electrically actuated to induce motion in the direction perpendicular to its main plane. This addition property induces and/or changes the motion of the mass layer and therefore improves the dynamic properties of the active/passive absorber system. The active/passive absorber can have multiple mass layers and multiple elastic layers stacked one on top of the other. In addition, the mass layers can be continuous or discretized, and have varying thicknesses and shapes for sections and/or segments in the mass layer.

Abstract: A resonance frequency vibration power harvester comprises an elongate body, a first vibration energy harvester device and a weight. The elongate body includes a first end, a second end and an interior channel extending through at least a portion of the elongate body between the first end and the second end. The second end of the elongate body is for connecting to a vibration source such that the first end is cantilevered. The first vibration energy harvester device is attached adjacent the first end of the elongate body, and the weight is joined to the interior channel to adjust a resonant frequency of the elongate body.

Abstract: Provided are an a piezoelectric element, an actuator device, a liquid-jet head and a liquid-jet apparatus which exhibit excellent displacement characteristics; the piezoelectric element is configured of a lower electrode, a piezoelectric layer and an upper electrode; and the half-value width of the (100) planes is not larger than 0.2 degrees, and the half-value width of the (200) planes is not smaller than 0.25 degrees, when the face surface of the piezoelectric layer is measured by means of the wide-angle X-ray diffraction method.

Abstract: A composite mode transducer for dissipating heat generated by a heat generating element is disclosed. The composite mode transducer includes a transducing module and connection elements. The transducing module includes first and second transducing elements connected in parallel. The connection elements are connected to resonance nodes of the first and second transducing elements. The first and second transducing elements are driven by a multiple-frequency resonance circuit, to produce resonance vibration of composite modes at resonance vibration frequencies of the system. The resulting advantages by using the composite mode transducer are: elimination of local stress concentration, and enhancement of efficiency, endurance and stability of the system. Accordingly, drawbacks of the prior art are overcome. The present invention further provides a cooling device with the composite mode transducer.

Abstract: A flexural resonator includes a piezoelectric material. At least a portion of an electrode having a first surface and a second surface is embedded in the piezoelectric material such that the piezoelectric material is disposed over and in electronic association with the first and second surfaces of the electrode.

Abstract: Disclosed are a piezoelectric element which can obtain a large strain with a low drive voltage, a liquid-jet head and a liquid-jet apparatus. The piezoelectric element includes: a lower electrode; an upper electrode; and a piezoelectric film which is made of lead zirconate titanate (PZT), and which has perovskite crystals having priority orientations of the (100) plane, the piezoelectric film being interposed between the lower electrode and the upper electrode. In the piezoelectric element, an X-ray diffraction peak position derived from the (100) planes of the piezoelectric film is within a range of 2?=21.79 to 21.88.

Abstract: Disclosed is a structural vibration damping device, which comprises a piezoelectric element adapted to be mounted on a structure, a shunt circuit inserted between two electrodes of the piezoelectric element, and an electric circuit for selectively opening and closing the shunt circuit. In this damping device, the electric circuit is operable, when a voltage between the electrodes of the piezoelectric element has a positive or negative extreme value due to a vibration of the structure, to close the shunt circuit so as to allow a current to flow between the electrodes of the piezoelectric element, and, when the current is reduced to zero, to open the shunt circuit so as to preclude the current flow until a voltage between the electrodes of the piezoelectric element subsequently has the extreme value. Further, each of the shunt circuit and the electric circuit is designed to be operated using only a power generated by the piezoelectric element.

Abstract: A piezoelectric/electrostrictive device is provided including a substrate section and an operation section disposed on the substrate section. The operation section includes a piezoelectric/electrostrictive film and an electrode film, and the device operates by displacement of the operation section. The piezoelectric/electrostrictive films and electrode films are alternately laminated so that uppermost and lowermost layers form the electrode films. The operation section and the substrate section are integrally fired, and the substrate section is ceramic material containing a titanium element.

Abstract: A method for fabricating a quartz nanoresonator which can be integrated on a substrate, along with other electronics is disclosed. In this method a quartz substrate is bonded to a base substrate. The quartz substrate is metallized so that a bias voltage is applied to the resonator, thereby causing the quartz substrate to resonate at resonant frequency greater than 100 MHz. The quartz substrate can then be used to drive other electrical elements with a frequency equal to its resonant frequency. The quartz substrate also contains tuning pads to adjust the resonant frequency of the resonator. Additionally, a method for accurately thinning a quartz substrate of the resonator is provided. The method allows the thickness of the quartz substrate to be monitored while the quartz substrate is simultaneously thinned.

Abstract: A piezoelectric frame includes a tuning-fork type piezoelectric vibrating piece having excitation electrodes on each of at least two vibrating arms extending in a first direction from one end of a base portion thereof. Respective supporting arms extend in a first direction from respective external edges of the vibrating arms. An outer frame portion surrounds the tuning-fork type piezoelectric vibrating piece. The connecting portions have designated widths and connect the respective supporting arms to the outer frame portion. During manufacture, the designated widths are trimmed (e.g., by a pulsed laser) until the desired vibration frequency is obtained.

Abstract: Methods for integrating quartz-based resonators with electronics on a large area wafer through direct pick-and-place and flip-chip bonding or wafer-to-wafer boding using handle wafers are described. The resulting combination of quartz-based resonators and large area electronics wafer solves the problem of the quartz-electronics substrate diameter mismatch and enables the integration of arrays of quartz devices of different frequencies with the same electronics.