Abstract: The invention relates to a piezoelectric actuator including: a first piezoelectric vibrator including a first diaphragm and first piezoelectric elements that are provided on the first diaphragm and include a first electrode, a second electrode, and a piezoelectric material layer held by the first electrode and the second electrode; a second piezoelectric vibrator including a second diaphragm and second piezoelectric elements that are provided on the second diaphragm and include a first electrode, a second electrode, and a piezoelectric material layer held by the first electrode and the second electrode; and an inductor. The layout of the first piezoelectric vibrator in the first diaphragm is the same as the layout of the second piezoelectric vibrator in the second diaphragm. The positions of the first piezoelectric elements on the first diaphragm correspond to the positions of the second piezoelectric elements on the second diaphragm.

Abstract: A piezoelectric element includes a first electrode, a piezoelectric layer which is formed on the first electrode by using a solution method, and is formed from compound oxide which has a perovskite structure in which potassium, sodium, and niobium are provided, and a second electrode which is provided on the piezoelectric layer. The piezoelectric layer has a peak derived from a (200) plane and a peak derived from a (002) plane in an X-ray diffraction pattern obtained by ?-2? measurement.

Abstract: The present disclosure discloses an ultrasonic transducer. The ultrasonic transducer includes a piezoelectric layer. The piezoelectric layer includes an array of piezoelectric posts, a plurality of emitting electrodes, and a plurality of receiving electrodes. The piezoelectric posts are configured for emitting and receiving ultrasonic wave. The material of each of the piezoelectric posts includes lead zirconate titanate piezoelectric ceramics. The emitting electrodes are formed on a lower surface of the piezoelectric layer by a sputtering process. The receiving electrodes are formed on an upper surface of the piezoelectric layer by the sputtering process. Each of the emitting electrodes and each of the receiving electrodes include lead, zirconium, titanium, and/or alloys thereof.

Abstract: An electroacoustic transducer includes: a polygonal-shaped laminated piezoelectric element including alternately stacked piezoelectric layers and electrode layers, with the piezoelectric layers placed between at least one pair of electrode layers having different polarities; and a circular vibration plate on which the laminated piezoelectric element is placed. Of the piezoelectric layers sandwiched between the at least one pair of electrode layers, the total volume (V) of those effective layers that overlap the at least one pair of electrode layers as viewed from the stacking direction satisfies the condition below: 0.2?R2×ts?V?2.0?R2×ts wherein ? represents the ratio of the circumference of a circle to its diameter, R represents the radius of the vibration plate, and ts represents the thickness of the vibration plate.

Abstract: A capacitor includes a body including a plurality of dielectric layers and internal electrodes which are alternately stacked, and a compensation region formed in the interior of the body, the compensation region including portions of the plurality of dielectric layers and including a central portion and an end portion extended from the central portion. A thickness of the central portion of the compensation region is between 4 and 13 times as great as that of a dielectric layer among the plurality of dielectric layers on which the internal electrodes are formed.

Abstract: The present invention relates to a ceramic comprising (or consisting essentially of) a solid solution containing Bi, K, Ti and Fe (and optionally Pb) which exhibits piezoelectric behavior.

Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+?[(ZrxTi1?x)1?aNba]Oy??(P) 0.70?rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)?0.95?? (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.

Abstract: A multilayer sintered body having alternately stacked Ni-based inner electrodes and piezoelectric ceramic layers. The piezoelectric ceramic layers contain a main ingredient of a perovskite compound containing Nb, K, Na, and Li, at least one element M1 selected from Nd and Dy, and at least one element M2 selected from Ga and Al. The element M2 content is 0.071 parts by mole or less per 1 part by mole of the Nb in a solution obtained through a dissolution process. This multilayer piezoelectric ceramic electronic component is manufactured through the cofiring of conductive films as a precursor of the inner electrodes and ceramic green sheets as a precursor of the piezoelectric ceramic layers in a reducing atmosphere in which the oxidation of Ni is inhibited.

Abstract: According to an embodiment, a MEMS transducer includes a stator, a rotor spaced apart from the stator, and a multi-electrode structure including electrodes with different polarities. The multi-electrode structure is formed on one of the rotor and the stator and is configured to generate a repulsive electrostatic force between the stator and the rotor. Other embodiments include corresponding systems and apparatus, each configured to perform corresponding embodiment methods.

Abstract: A PZT-film laminated structure includes a substrate, a lower electrode on the substrate, an orientation control layer on the lower electrode, a PZT layer on the orientation control layer, and an upper electrode on the PZT layer. The PZT layer has a (100) or (001) main orientation in which a peak intensity of PZT (100) or (001) is 90% or greater relative to a peak intensity of all PZT peaks in an X-ray diffraction measurement. A ratio of a total value of a secondary ion intensity of Cl relative to a total value of a secondary ion intensity of Ti in the PZT layer is equal to or smaller than 0.03 when the secondary ion intensity of Cl and the secondary ion intensity of Ti in the PZT layer are measured in a direction of thickness of the PZT layer with a magnetic-field secondary ion mass spectrometry.

Abstract: A lead-free piezoelectric ceramic composition includes a first crystal phase made of an alkali niobate/tantalate type perovskite oxide having piezoelectric properties, and a second crystal phase made of an M-Ti—O spinel compound (where the element M is a monovalent to quadrivalent element).

Abstract: The present invention aims at providing a piezoelectric element with less characteristic variations with time, and a liquid discharge head and a recording device each using the piezoelectric element. The piezoelectric element 30 of the present invention is the piezoelectric body 30 (piezoelectric ceramic layer 21b) containing a potassium sodium niobate composition as a primary component. The piezoelectric body extends in a planar direction. A compressive stress is applied in the planar direction. A phase transition point between a tetragonal crystal system and an orthorhombic crystal system is ?20° C. or below.

Abstract: A lead-free piezoelectric ceramic material has the general chemical formula xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaN-bO3, xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3, xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3, xBiCoO3-yBa-TiO3-z(Bi0.5Na0.5)TiO3, or xBiCoO3-yNaNbO3-zKNbO3; wherein x+y+z=1, and x, y, z?0.

Abstract: A piezoelectric device has a piezoelectric ceramic layer obtained by sintering a piezoelectric ceramic composition that contains an alkali-containing niobate type perovskite composition which is represented by (LilNamK1-l-m)n(Nb1-oTao)O3 (wherein 0.04?l?0.1, 0?m?1, 0.95?n?1.05, 0?o?1) and Ag component, as well as a conductor layer sandwiching the piezoelectric ceramic layer. The piezoelectric ceramic layer has Ag segregated in voids present in a sintered compact of the perovskite composition in terms of oxides relative to the perovskite composition.

Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is not less than 0.0013 parts by weight and is not greater than 0.0280 parts by weight, and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.074<y?0.085, 0?z?0.02, and 0.986?a?1.02).

Abstract: A resonant circuit comprises an input terminal and an output terminal and at least: a group of N resonators, where N?1, the resonators having the same resonance frequency and the same antiresonance frequency; a first and a second impedance matching element having a non-zero reactance, the first element being in series with the group of resonators, and the second element being in parallel with the group of resonators, the resonant circuit comprising: first means for controlling the group of resonators, enabling the static capacitance of the group to be fixed at a first value; second control means, enabling the impedance of the first impedance matching element and that of the second element to be fixed at second values; the first and second values being such that the triplet of values composed of the static capacitance of the group, the impedance of the first element, and the impedance of the second element can be used to determine the following triplet of parameters: the characteristic impedance Zc of the ass

Abstract: The present invention provides a piezoelectric material which has excellent insulating and piezoelectric properties and which contains no lead and potassium and also provides a piezoelectric element and a multilayered piezoelectric element each using the above piezoelectric material. The piezoelectric material is a perovskite-type metal oxide represented by the following general formula (1). (1?x){(NayBa1-z)(Nb7Ti1-z)O3}-xBiFeO3??(1) In the formula, 0<x?0.015, 0.80?y?0.95, 0.85?z?0.95 are satisfied.

Abstract: A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900° C. or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.

Abstract: The piezoelectric body is configured to have a layered structure such that a plurality of unit layers are stacked in a film thickness direction, and each of the unit layers is formed of a first layer on which the displacement is relatively easy to occur, and a second layer which has a high concentration of Zr as compared with the first layer. In addition, when composition ratio Ti/(Zr+Ti) of Zr to Ti in each of the first layer and the second layer is set as Cr1 and Cr2, the composition ratio of each layer is adjusted so as to satisfy the following conditions (1) to (3). 0.41?Cr1?0.81??(1) 0.1?Cr1?Cr2?0.

Abstract: A piezoelectric ceramic composition contains a perovskite composition which is represented by (Pba·Rex){Zrb·Tic, ·(Ni1/3Nb2/3)d·(Zn1/3Nb2/3)e}O3 (wherein Re represents La and/or Nd, and a-e and x satisfy the following conditions 0.95?a?1.05, 0?x?0.05, 0.35?b?0.45, 0.35?c?0.45, 0<d?0.10, 0.07?e?0.20 and b+c+d+e=1) and 0.05-0.3% by mass of an Ag component in terms of oxides relative to the perovskite composition.

Abstract: A dielectric ceramic composition includes a main component comprising (1-x)BaTiO3-x(Na1-yKy)NbO3, where 0.005?x?0.5 and 0.3?y?1.0; a first subcomponent comprising an element selected from the group consisting of Mn, V, Cr, Fe, Ni, Co, Cu and Zn; and a second subcomponent comprising SiO2.

Abstract: In a piezoelectric device, a first electrode and a second electrode are disposed to be opposed to each other on plate surfaces of the piezoelectric device, a first electrode plane of the piezoelectric device is fixedly bonded to a plate surface of a vibrating plate, a piezoelectric material forming the piezoelectric device is polarized in a direction parallel to the first electrode plane, the piezoelectric device is fixed to a base through a second electrode plane of the piezoelectric device, and the piezoelectric device generates a thickness-shear vibration with the fixed second electrode plane being a reference plane. The piezoelectric vibration generated by the piezoelectric device generates a flexural vibration in the vibrating plate, to thereby remove dust adhering to a surface of the vibrating plate.

Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

Abstract: A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements.

Abstract: A piezoelectric material is expressed as a mixed crystal including a complex oxide having a perovskite structure and a rhombohedral structure and a complex oxide having a perovskite structure and a tetragonal structure, and the molar ratio of the complex oxide having a rhombohedral structure to the complex oxide having a tetragonal structure (rhombohedral crystal/tetragonal crystal) is 0.54 to less than 1.20.

Abstract: A parametric system for generating audible sound, comprising a transducer array configured to emit modulated ultrasonic waves in a converging wave pattern toward a focal volume, where the modulated ultrasonic waves are configured to demodulate to generate audible sound waves in the focal volume, and where the generated audible sound waves emanate from the focal volume with a diverging wave pattern.

Abstract: This invention provides an electromechanical device comprising an active material comprising a metal oxide such as Ce0.8Gd0.2O1.9 wherein the elastic modulus of metal oxide can be modulated by applying external electric field. The Ce0.8Gd0.2O1.9 layer in a substrate\electrode\Ce0.8Gd0.2O1.9\electrode structure or conductive substrate\Ce0.8Gd0.2O1.9\electrode structure develops a stress upon applying an electric field. This invention provides methods for tailoring the elastic modulus of materials using an electric field for the generation of an electromechanical response.

Abstract: To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.

Abstract: A piezoelectric device is provided with: a piezoelectric ceramic layer that is obtained by firing a piezoelectric ceramic composition which contains a perovskite composition and an Ag component; and a conductor layer that sandwiches the piezoelectric ceramic layer, wherein Ag is segregated in voids in a sintered body of the perovskite composition in the piezoelectric ceramic layer. The piezoelectric ceramic composition preferably contains a perovskite composition which is represented by (Pba.Rex){Zrb.Tic,.(Ni1/3Nb2/3)d.(Zn1/3Nb2/3)e}O3 (wherein Re represents La and/or Nd, and a-e and x satisfy the following conditions 0.95?a?1.05, 0?x?0.05, 0.35?b<0.45, 0.35?c?0.45, 0?d?0.10, 0.07?e?0.20 and b+c+d+e=1) and 0.05-0.3% by mass of an Ag component in terms of oxides relative to the perovskite composition.

Abstract: A continuous piezoelectric film can include a plurality of fibers, each fiber including a polypeptide, wherein molecules of the polypeptide have electric dipole moments that are aligned such that the piezoelectric fiber provides a piezoelectric effect. The continuous piezoelectric film has at least one piezoelectric constant d31 or d33 that is at least 1 pC/N. The continuous piezoelectric film can be prepared hot pressing a mat of aligned piezoelectric fibers.

Abstract: The present invention provides for a composition comprising a thin film of BiFeO3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO3 thin film, and a second electrode in contact with the BiFeO3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

Abstract: A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTazZru)O3 (1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4<x?0.7, 0.02?y?0.11, 0.5?x+y<0.75, 0<z?0.28, 0<w?0.02, 0.02?v?0.11, 0.02?u?0.11, and 0.95?m<1.2, and contains 1% by mass or less of MnO relative to the main composition.

Abstract: Provided is a piezoelectric material that achieves both high piezoelectric performance and high Curie temperature. In addition, provided are a piezoelectric element, a liquid discharge head, an ultrasonic motor, and a dust removing device, which use the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide that is expressed by the following general formula (1): xBaTiO3-yBiFeO3-zBi(M0.5Ti0.5)O3 (1), where M represents at least one type of element selected from the group consisting of Mg and Ni, x satisfies 0.25?x?0.75, y satisfies 0.15?y?0.70, z satisfies 0.05?z?0.60, and x+y+z=1 is satisfied.

Abstract: A piezoelectric thin-film multilayer body includes a substrate, an adhesive layer on the substrate, a lower electrode layer on the adhesive layer, and a lead-free piezoelectric thin-film layer on the lower electrode layer. The lead-free piezoelectric thin-film layer is composed of lithium potassium sodium niobate (composition formula (NaxKyLiz)NbO3, 0<x<1, 0<y<1, 0?z?1, x+y+z=1). The maximum height Rz of a roughness of an adhesive-layer-facing surface of the substrate is 2 nm or less. The adhesive layer is composed of a non-crystalline oxide of a Group 4 element or a non-crystalline oxide of a Group 5 element. The adhesive layer has a thickness of 1 nm or more and 2 nm or less and is equal to or more than the maximum height Rz of the roughness of the surface of the substrate.

Abstract: A piezoelectric vibration element which includes at least a plurality of electrodes and a plurality of piezoelectric layers alternately disposed in a first direction, and performs bending vibration in the first direction so as to change amplitude in a second direction vertical to the first direction by inputting an electric signal, and in which a center of a facing portion in the second direction is provided at a different position from a center of the piezoelectric vibration element in the second direction, the facing portion including a portion in which one of the piezoelectric layers interposed between the electrodes that are disposed so as to be adjacently opposed to each other, and a piezoelectric vibration device and a portable terminal using the piezoelectric vibration element are provided.

Abstract: Provided is a dust removing device that can be designed and controlled appropriately and has high dust removal performance even at low temperature, and an imaging device using the dust removing device. In a dust removing device to be set on a base, including a piezoelectric element formed of a piezoelectric material and a pair of opposing electrodes, a vibration member, and a fixation member containing at least a high molecular compound component, a phase transition temperature T from a first ferroelectric crystal phase to a second ferroelectric crystal phase of the piezoelectric material is set to ?60° C.?T??5° C., and whereby, the dust removing device can be designed and controlled appropriately and high dust removal performance can be obtained even at low temperature.

Abstract: There is provided a piezoelectric ceramic having a high and stable piezoelectric constant and a high and stable mechanical quality factor in a wide operating temperature range, and a piezoelectric element according to the present invention includes a main component containing a perovskite type metal oxide having the following general formula (1) or (2); and Mn as a first auxiliary component, (Ba1-xCax)a(Ti1-y-zSnyZrz)O3??(1) (0.08?x?0.20, 0.01?y?0.04, 0<z?0.04) (Ba1-xCax)a(Ti1-ySny)O3??(2) (0.08?x?0.20, 0.01?y?0.04) wherein the amount b (mol) of Mn per mole of the metal oxide is in the range of 0.0048?b?0.0400, and the value a of the general formula (1) or (2) is in the range of 0.9925+b?a?1.0025+b.

Abstract: Provided are a barium titanate-based piezoelectric ceramics having satisfactory piezoelectric performance and a satisfactory mechanical quality factor (Qm), and a piezoelectric element using the same. Specifically provided are a piezoelectric ceramics, including: crystal particles; and a grain boundary between the crystal particles, in which the crystal particles each include barium titanate having a perovskite-type structure and manganese at 0.04% by mass or more and 0.20% by mass or less in terms of a metal with respect to the barium titanate, and the grain boundary includes at least one compound selected from the group consisting of Ba4Ti12O27 and Ba6Ti17O40, and a piezoelectric element using the same.

Abstract: The method for manufacturing a piezoelectric substrate includes a process of forming a material having composition M1?y/2+x(N1?yNby)O3+x (where 0?y?0.045, M represents Pb1?pSrp with 0?p?0.03, and N represents Ti1?qZrq with 0.45?q?0.60) into a sheet form, and a process of burning the material formed into the sheet form while mounted on a setter to obtain a piezoelectric substrate. A thickness of the piezoelectric substrate is 30 ?m or less, and a surface area/thickness ratio of the piezoelectric substrate is 1×107 ?m or more. The variable x has a value within or on a boundary of a region R shown by hatching in FIG. 1.

Abstract: A piezoelectric element according to the present invention includes a piece of piezoelectric material and a plurality of electrodes disposed on both surfaces of the piezoelectric material. The piezoelectric material is including a perovskite-type metal oxide represented by general formula (1) below as a main component, a portion or the entire of the piezoelectric material is held by the plurality of electrodes, and the piezoelectric material held by the electrodes has a first region having remanent polarization. General Formula (1) (Ba1-x-yCaxSny)?(Ti1-zZrz)O3 (where 0.020?x?0.200, 0.020?y?0.200, 0?z?0.050, and 0.986???1.

Abstract: According to one embodiment, an ultrasonic probe has a laminated structure of an acoustic matching layer, transducer layer with arrayed transducers, and backing layer. A transmission/reception unit transmits and receives ultrasonic waves to and from an object via the transducers. A control unit controls the transmission/reception unit to synchronize ultrasonic-wave generation by a specific transducer of the transducers with ultrasonic-wave reception by a different transducer. A phase shift detection unit detects a phase shift between an output signal from the transmission/reception unit and a reference signal, the output signal corresponding to synchronization between the ultrasonic-wave generation and the ultrasonic-wave reception.

Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material according to the present invention includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is equal to or less than 0.0012 parts by weight (including 0 parts by weight), and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.025?y?0.085, 0?z?0.02, and 0.986?a?1.02).

Abstract: A piezoelectric material contains a main component containing a perovskite-type metal oxide having the formula (1); a first auxiliary component composed of Mn; and a second auxiliary component composed of Bi or Bi and Li, wherein the Mn content is 0.04 parts by weight or more and 0.400 parts by weight or less on a metal basis per 100 parts by weight of the metal oxide, the Bi content is 0.042 parts by weight or more and 0.850 parts by weight or less on a metal basis per 100 parts by weight of the metal oxide, and the Li content is 0.028 parts by weight or less (including 0 parts by weight) on a metal basis per 100 parts by weight of the metal oxide. (Ba1-xCax)a(Ti1-y-zSnyZrz)O3??(1) (wherein 0?x?0.080, 0.013?y?0.060, 0?z?0.040, and 0.986?a?1.020.

Abstract: A liquid ejecting head including a piezoelectric element, the piezoelectric element includes: a first electrode; an orientation control layer provided on the first electrode, the orientation control layer having a perovskite structure including Bi in an A site and Fe and Ti in a B site, and the orientation control layer being self-oriented in a (100) plane; a piezoelectric body layer provided on the orientation control layer and made of a piezoelectric material of the perovskite structure preferentially oriented in the (100) plane; and a second electrode provided on the piezoelectric body layer.

Abstract: A piezoelectric material includes a metal oxide represented by general formula (1) below, a Mn content is 0.04 parts by weight or more and 0.36 parts by weight or less, a Li content ? is 0.0013 parts by weight or more and 0.0280 parts by weight or less, a Bi content ? is 0.042 parts by weight or more and 0.850 parts by weight or less, and the contents ? and ? satisfy 0.5?(?·MB)/(?·ML)?1 (Ba1-xCax)a(Ti1-y-zZrySnz) O3 (1) (where x, y, z, and a satisfy 0.09?x?0.30, 0.025?y?0.074, 0?z?0.02, and 0.986?a?1.02). A piezoelectric material according to an embodiment of the present invention contains no lead, has a low degree of temperature dependency of piezoelectric performance within operation temperature ranges of piezoelectric elements, and good piezoelectric properties.

Abstract: An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn.

Abstract: A laminated ceramic capacitor including a laminated body having a plurality of stacked ceramic layers and internal electrodes located between the ceramic layers. The internal electrodes have a plurality of ceramic columnar members formed therein, which project into the internal electrodes from interfaces between the ceramic layers and the internal electrodes, but do not penetrate in the thickness direction of the internal electrodes.

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract: There is provided a piezoelectric material not containing any lead component, having stable piezoelectric characteristics in an operating temperature range, a high mechanical quality factor, and satisfactory piezoelectric characteristics. The piezoelectric material according to the present invention includes a main component containing a perovskite-type metal oxide that can be expressed using the following general formula (1), and subcomponents containing Mn, Li, and Bi. When the metal oxide is 100 parts by weight, the content of Mn on a metal basis is not less than 0.04 parts by weight and is not greater than 0.36 parts by weight, content ? of Li on a metal basis is equal to or less than 0.0012 parts by weight (including 0 parts by weight), and content ? of Bi on a metal basis is not less than 0.042 parts by weight and is not greater than 0.850 parts by weight (Ba1-xCax)a(Ti1-y-zZrySnz)O3??(1) (in the formula (1), 0.09?x?0.30, 0.025?y?0.085, 0?z?0.02, and 0.986?a?1.02).

Abstract: An acoustic wave device includes: a piezoelectric film made of an aluminum nitride film containing a divalent element and a tetravalent element, or a divalent element and a pentavalent element; and an electrode that excites an acoustic wave propagating through the piezoelectric film.